JP7239912B1 - 太陽光発電モジュール構造 - Google Patents
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Abstract
Description
本願は、タブ線上のボス部の突起高さおよびタブ線の延在方向に沿う外面の勾配を限定することで、積層時にボス部の電池セルに対する応力を回避し、さらに電池セルの破片を防止し、太陽光発電モジュール構造の製造歩留まりを向上させ、太陽光発電モジュール構造の使用年数を保証する。
TOPCon(トンネル酸化層パッシベーション接触、Tunnel Oxide Passivated Contact)電池は、「トンネル効果」により後面のパッシベーションを実現し、従来のTOPCon電池の後面構造は内から外へ順に半導体基板、トンネル酸化層、ドープ導電層、後面パッシベーション層である。N型TOPCon(接触パッシベーション電池)はホウ素が拡散してBSGホウケイ酸ガラスを形成し、ホウケイ酸ガラスの洗浄除去難度はリンケイ酸ガラスよりも難しい。一般的には、酸化性を有する混合酸溶液を用いて除去する。表面をきれいに洗浄して乾燥させた後、後面を研磨する。現在、半導体基板の後面の研磨後の状態は、ナノスケールの厚さの極薄トンネル酸化層に一定の影響を与え、トンネル酸化層と半導体基板との間の接触抵抗率の増加を引き起こしやすく、太陽電池の充填因子の変動を引き起こしやすく、電池の光電変換効率に影響を与える。
半導体基板を含み、半導体基板の後面は第1テクスチャ構造を有し、第1テクスチャ構造は少なくとも部分的に積層された2つまたは複数の第1サブ構造を有し、ここで、前記少なくとも部分的に積層された2つまたは複数の第1サブ構造に対して、前記後面から離れかつ前記後面に垂直な方向において、最外側の第1サブ構造の頂部表面とそれに隣接する第1サブ構造の頂部表面の距離が2μm以下であり、前記最外側の第1サブ構造の頂部表面の一次元サイズが45μm以下であり、半導体基板の前面は第2テクスチャ構造を有し、第2テクスチャ構造はピラミッド微細構造を含んでもよい。
太陽電池は、
半導体基板の前面に位置する第1パッシベーション層と、
半導体基板の後面に位置する第1テクスチャ構造上のトンネル酸化層と、
トンネル酸化層の表面に位置し、前記半導体基板と同じ導電タイプのドープ元素を有するドープ導電層と、
ドープ導電層の表面に位置する第2パッシベーション層と、をさらに含む。
11 半導体基板
111 電極
112 メイングリッドライン
113 フィンガーグリッドライン
114 パッド
2 タブ線
21 ボス部
211 第1斜面部
212 第2斜面部
22 突起部
23 溶接コア
24 スズ層
Claims (13)
- 太陽光発電モジュール構造であって、
複数の電池セルと、複数のタブ線とを含み、
前記電池セルは、半導体基板とパッシベーション層とを含み、前記半導体基板には、電極が設けられ、前記電極は、メイングリッドライン、フィンガーグリッドラインおよびパッドを含み、各前記電池セルには、9~20個の前記メイングリッドラインがあり、各前記電池セルには、40~100個の前記フィンガーグリッドラインがあり、各前記メイングリッドラインは、3~10個の前記パッドに接続され、
前記タブ線は、複数の前記電池セルを接続し、前記メイングリッドラインに貼り合わせて設けられ、前記タブ線には、前記パッドに溶接接続された少なくとも1つのボス部が突起して設けられ、前記ボス部の前記電池セルから離れた一端から前記電池セルまでの距離は、200~300μmであり、
前記ボス部の前記タブ線の延在方向に沿う外面には、第1斜面部が設けられ、前記第1斜面部の頂点から前記第1斜面部の延在方向に沿って前記第1斜面部の全体の20%を占める領域を前記第1斜面部の頂端領域とし、前記第1斜面部の底部から前記第1斜面部の延在方向に沿って前記第1斜面部の全体の20%を占める領域を前記第1斜面部の底端領域とし、前記第1斜面部のうち前記第1斜面部の頂端領域と前記第1斜面部の底端領域とを除いた部分を前記第1斜面部の中間領域とし、前記第1斜面部の中間領域の勾配は、5°~10°である、ことを特徴とする太陽光発電モジュール構造。 - 前記第1斜面部の中間領域の勾配は、前記第1斜面部の頂端領域および底端領域の勾配よりも大きい、ことを特徴とする請求項1に記載の太陽光発電モジュール構造。
- 前記ボス部の前記タブ線の延在方向に垂直な外面には、第2斜面部が設けられ、前記第2斜面部の頂点から前記第2斜面部の延在方向に沿って前記第2斜面部の全体の20%を占める領域を前記第2斜面部の頂端領域とし、前記第2斜面部の底部から前記第2斜面部の延在方向に沿って前記第2斜面部の全体の20%を占める領域を前記第2斜面部の底端領域とし、前記第2斜面部のうち前記第2斜面部の頂端領域と前記第2斜面部の底端領域とを除いた部分を前記第2斜面部の中間領域とし、前記第2斜面部の中間領域の勾配は、40°~70°であり、前記第2斜面部の中間領域の勾配は、前記第2斜面部の頂端領域および底端領域の勾配よりも大きい、ことを特徴とする請求項1に記載の太陽光発電モジュール構造。
- 前記半導体基板は、正面と背面とに分けられ、前記電極は、正面電極と背面電極とを含み、前記半導体基板の正面には、前記正面電極が設けられ、前記半導体基板の背面には、前記背面電極が設けられ、前記複数のタブ線のそれぞれは、前記電池セルの正面電極と隣接する前記電池セルの背面電極とを接続し、背面電極に接続された前記複数のタブ線の前記電池セルに垂直な方向での厚さは、互いに同じである、ことを特徴とする請求項1に記載の太陽光発電モジュール構造。
- 前記ボス部の前記電池セルへの投影は、前記タブ線の中心線の前記電池セルへの投影の少なくとも一側に位置する、ことを特徴とする請求項1に記載の太陽光発電モジュール構造。
- 前記ボス部が前記電池セルに垂直な方向に沿って前記パッドに投影した面積は、0.2平方ミリメートルよりも大きい、ことを特徴とする請求項1に記載の太陽光発電モジュール構造。
- 前記ボス部が垂直方向に沿って前記パッドに投影した面積は、前記パッドの面積の30%~80%を占める、ことを特徴とする請求項1に記載の太陽光発電モジュール構造。
- 前記ボス部の中心線の前記電池セルへの投影と前記パッドの中心線との間の距離をAとし、前記パッドが前記メイングリッドラインに垂直な方向に沿って延在する長さをBとしたときに、A≦0.4Bを満たす、ことを特徴とする請求項1に記載の太陽光発電モジュール構造。
- 前記タブ線には、複数のボス部が設けられ、複数の前記タブ線のそれぞれには、少なくとも1つの突起部がさらに設けられ、前記突起部は、前記ボス部の間に位置し、前記突起部の前記電池セルへの投影面積は、前記ボス部の前記電池セルへの投影面積よりも小さい、ことを特徴とする請求項1に記載の太陽光発電モジュール構造。
- 前記パッドは、端部パッドと中部パッドとを含み、前記中部パッドの面積は、前記端部パッドの面積よりも小さく、前記端部パッドは、前記メイングリッドラインの両端に設けられ、前記中部パッドは、前記端部パッドの間に設けられている、ことを特徴とする請求項1に記載の太陽光発電モジュール構造。
- 前記太陽光発電モジュール構造は、
(1)前記パッドの前記メイングリッドラインの幅方向におけるサイズが前記メイングリッドラインの幅よりも大きく、且つ前記パッドの前記メイングリッドラインの延在方向におけるサイズが前記フィンガーグリッドラインの幅よりも大きいことと、
(2)前記タブ線の前記メイングリッドラインの幅方向におけるサイズが前記パッドのサイズよりも小さく、且つ前記タブ線の直径サイズが0.1~0.5ミリメートルであることと、
(3)前記パッドの数が前記フィンガーグリッドラインの数よりも小さいことと、のうちの少なくとも1つを含む、ことを特徴とする請求項1に記載の太陽光発電モジュール構造。 - 前記太陽光発電モジュール構造は、バスバーをさらに含み、前記バスバーの断面形状は、長方形であり、電池ストリングは、前記電池セルが複数の前記タブ線を介して接続されてなり、電池層は、複数の前記電池ストリングが直列接続および/または並列接続されかつ前記バスバーを介して接続されてなる、ことを特徴とする請求項1に記載の太陽光発電モジュール構造。
- 前記太陽光発電モジュール構造は、正面パッケージ構造、接着フィルムおよび背面パッケージ構造をさらに含み、前記接着フィルムは、正面接着フィルムおよび背面接着フィルムを含み、前記接着フィルムは、前記タブ線および前記電池セルに接着して設けられる、ことを特徴とする請求項1に記載の太陽光発電モジュール構造。
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