JP7238623B2 - Charged particle beam exposure mask, method for manufacturing charged particle beam exposure mask - Google Patents

Description

The present disclosure relates to a charged particle beam exposure mask and a method of manufacturing a charged particle beam exposure mask.

2. Description of the Related Art In recent years, miniaturization of integrated circuit patterns has been promoted in order to mass-produce integrated circuits such as semiconductor devices. If the line width of the fine pattern is smaller than the wavelength of the exposure light source, the light used for exposure will be diffracted by the fine pattern, making it impossible to perform exposure as designed. Therefore, development of a charged particle beam exposure apparatus using an electron beam or an ion beam that is not diffracted by a pattern as an exposure light source is underway.

In a charged particle beam exposure apparatus, a stencil-type transfer mask (also called an aperture) is used as a mask for the charged particle beam exposure apparatus along with a lens and a deflector in order to make the electron beam emitted from the electron gun have a desired pattern size. Used. Patent Document 1 discloses the structure of a charged particle beam exposure mask.

JP-A-2006-5273

However, when a conventional charged particle beam exposure mask is fixed in an apparatus, it is necessary to provide a complicated mechanism. had

An object of the present disclosure is to enable a charged particle beam exposure mask to be easily arranged and fixed in a charged particle beam exposure apparatus in view of the above circumstances.

According to an embodiment of the present disclosure, a substrate having a first surface, a second surface provided opposite to the first surface, and an opening extending from the first surface to the second surface; a membrane having a transmission portion in a portion overlapping with the portion, wherein the second surface of the substrate is provided so as to surround the opening, and a first portion provided at a position facing the first surface. a second portion provided so as to surround the outside of the first portion, provided at a position facing the first surface of the substrate, and having a smaller distance to the first surface than the first portion; A third portion provided to connect the first portion and the second portion, wherein the end of the first portion to the end of the second portion when a cross section perpendicular to the first surface is viewed and a third portion in which the distance from the first surface to the third portion continuously decreases toward the third portion.

In the above mask for charged particle beam exposure, the third portion may be a plane, and an extension line of the second portion and the third portion may have a predetermined angle when viewed in cross section. .

In the charged particle beam exposure mask, the substrate may be a crystalline material.

In the charged particle beam exposure mask, the substrate may be silicon.

In the above mask for charged particle beam exposure, the main plane orientation of the second plane may be the (100) plane.

In the charged particle beam exposure mask, the predetermined angle may be 54° or more and 55° or less.

In the above mask for charged particle beam exposure, the substrate may have a thickness of 200 μm or more and 800 μm or less.

In the above mask for charged particle beam exposure, the thickness from the first surface of the substrate to the second portion of the second surface may be 200 μm or more and 750 μm or less.

In the charged particle beam exposure mask, the first surface of the substrate includes a fourth portion surrounding the first opening of the substrate and a fifth portion surrounding the fourth portion. , wherein the fifth portion of the first surface overlaps the second portion of the second surface.

In the above mask for charged particle beam exposure, the width of the fifth portion of the first surface may be larger than the width of the second portion of the second surface.

According to one embodiment of the present disclosure, a substrate having a first surface and a second surface opposite to the first surface, an insulating layer provided surrounding the substrate, and the first surface of the substrate a portion of the insulating layer on the second surface side of the substrate is removed to expose the substrate; The exposed portion has a bottom portion parallel to the first surface, and is etched so that the bottom portion and the side portion connected to the bottom portion have a predetermined angle to form a frame-shaped first groove. forming a first opening by etching a portion of the thin film layer inside the first groove when viewed from the first surface side, and at least the first opening of the substrate; and forming a second opening by etching a portion overlapping with a charged particle beam exposure mask, and dicing the substrate so as to be separated at the bottom portion of the first groove. .

In the above-described method for manufacturing a mask for charged particle beam exposure, when forming the first opening, a frame-shaped second groove overlapping the first groove is formed, and the second groove overlaps the first groove. may be superimposed with

In the method for manufacturing a mask for charged particle beam exposure, after forming the first groove, the insulating layer on the second surface side of the substrate is removed, and after forming the second opening, the second opening is formed. The insulating layer exposed by the portion may be removed.

In the method for manufacturing a mask for charged particle beam exposure, the substrate may be a crystalline material.

In the method for manufacturing a mask for charged particle beam exposure, the substrate may be silicon.

In the method of manufacturing a mask for charged particle beam exposure, the first groove may be etched using an alkaline solution.

In the above method for manufacturing a mask for charged particle beam exposure, the principal plane orientation of the second plane may be the (100) plane.

In the method for manufacturing a mask for charged particle beam exposure, the predetermined angle may be 125° or more and 126° or less.

In the above method for manufacturing a mask for charged particle beam exposure, the substrate may have a thickness of 200 μm or more and 400 μm or less.

According to an embodiment of the present disclosure, a charged particle beam exposure mask can be easily arranged and fixed in a charged particle beam exposure apparatus.

1 is a schematic diagram of a charged particle beam exposure apparatus according to a first embodiment of the present disclosure; FIG. 1 is a cross-sectional view of a charged particle beam exposure mask according to a first embodiment of the present disclosure; FIG. and a plan view. 1 is a plan view of a charged particle beam exposure mask according to a first embodiment of the present disclosure; FIG. FIG. 4 is a cross-sectional view showing a method for manufacturing a charged particle beam exposure mask according to the first embodiment of the present disclosure; FIG. 4 is a cross-sectional view showing a method for manufacturing a charged particle beam exposure mask according to the first embodiment of the present disclosure; FIG. 4 is a cross-sectional view showing a method for manufacturing a charged particle beam exposure mask according to the first embodiment of the present disclosure; FIG. 4 is a cross-sectional view showing a method for manufacturing a charged particle beam exposure mask according to the first embodiment of the present disclosure; FIG. 4 is a cross-sectional view showing a method for manufacturing a charged particle beam exposure mask according to the first embodiment of the present disclosure; FIG. 4 is a cross-sectional view showing a method for manufacturing a charged particle beam exposure mask according to the first embodiment of the present disclosure; FIG. 2 is a plan view showing a method of manufacturing a charged particle beam exposure mask according to the first embodiment of the present disclosure; FIG. 2 is an optical microscope photograph of a plan view showing a method for manufacturing a charged particle beam exposure mask according to the first embodiment of the present disclosure; FIG. 4 is a cross-sectional view showing a method for manufacturing a charged particle beam exposure mask according to the first embodiment of the present disclosure; FIG. 4 is a cross-sectional view showing a method for manufacturing a charged particle beam exposure mask according to the first embodiment of the present disclosure; FIG. 4 is a cross-sectional view showing a method for manufacturing a charged particle beam exposure mask according to the first embodiment of the present disclosure; FIG. 4 is a cross-sectional view showing a method for manufacturing a charged particle beam exposure mask according to the first embodiment of the present disclosure; FIG. 2 is a plan view showing a method of manufacturing a charged particle beam exposure mask according to the first embodiment of the present disclosure; It is a cross-sectional schematic diagram when the mask for charged particle beam exposure and a fixing jig are fixed according to the first embodiment of the present disclosure. FIG. 4 is a cross-sectional view of a modification of the charged particle beam exposure mask according to the first embodiment of the present disclosure; FIG. 4 is a cross-sectional view of a modification of the charged particle beam exposure mask according to the first embodiment of the present disclosure; FIG. 2 is a plan view showing a method of manufacturing a charged particle beam exposure mask according to the first embodiment of the present disclosure; FIG. 2 is a plan view showing a method of manufacturing a charged particle beam exposure mask according to the first embodiment of the present disclosure; FIG. 2 is a plan view showing a method of manufacturing a charged particle beam exposure mask according to the first embodiment of the present disclosure;

Hereinafter, a charged particle beam exposure mask and a method for manufacturing a charged particle beam exposure mask according to an embodiment of the present disclosure will be described in detail with reference to the drawings. The embodiments shown below are examples of the embodiments of the present disclosure, and the present disclosure should not be construed as being limited to these embodiments. In the drawings referred to in this embodiment, the same parts or parts having similar functions are denoted by the same reference numerals or similar reference numerals (reference numerals followed by A, B, etc.). may be omitted. Also, the dimensional ratios in the drawings (ratios between components, ratios in vertical and horizontal directions, etc.) may differ from actual ratios for convenience of explanation, and some components may be omitted from the drawings.

<First embodiment>
(1-1. Configuration of Exposure Apparatus)
FIG. 1 is a schematic diagram of a charged particle beam exposure mask in this embodiment.

As shown in FIG. 1, an electron beam exposure apparatus 1 includes an electron beam source 10 (also called an electron gun), a lens 20, a deflector 30 (also called a deflector), and a charged particle beam exposure mask 100 (also called an aperture). include. Note that the configuration of the electron beam exposure apparatus in this embodiment is merely an example, and is not limited to this configuration.

The electron beam source 10 irradiates an electron beam by applying a high voltage. An LaB ₆ (lanthanum hexaboride) single crystal, for example, is used for the electron beam source 10 .

By combining the lens 20 (lens 20a, lens 20b, lens 20c), the deflector 30 (deflector 30a, deflector 30b), and the charged particle beam exposure mask 100 for the electron beam irradiated from the electron beam source, , beam position correction, which is difficult to control with only the XYZ stage, and reduction or focusing of the electron beam. At this time, by using two apertures of a charged particle beam exposure mask 100a and a charged particle beam exposure mask 100b as the charged particle beam exposure mask 100, the electron beam is shaped into a predetermined shape (VSB: Variable Shaped Beam) can be performed. The configuration of the charged particle beam exposure mask will be described in detail below.

(1-2. Configuration of mask for charged particle beam exposure)
FIG. 2 is a cross-sectional view showing an outline of the charged particle beam exposure mask 100 in this embodiment, and FIG. 3 is a plan view of the charged particle beam exposure mask 100. As shown in FIG. As shown in FIGS. 2 and 3, the charged particle beam exposure mask 100 has a substrate 110 , an insulating layer 115 and a membrane 120 .

The substrate 110 has a first side 110a and a second side 110b opposite the first side 110a. The substrate 110 has an opening 110c (also referred to as opening) provided in the central portion from the first surface 110a to the second surface 110b. Therefore, the substrate 110 is provided in a frame shape.

The thickness of the substrate 110 is not particularly limited, but is preferably 100 μm or more and 800 μm or less, preferably 100 μm or more and 725 μm or less, more preferably 200 μm or more and 400 μm or less, from the viewpoint of handling.

The second surface 110b of the substrate 110 has a portion 110b1 (also referred to as a first portion), a portion 110b2 (also referred to as a second portion), and a portion 110b3 (also referred to as a third portion). The portion 110b1 is provided so as to surround the opening 110c. Also, the portion 110b1 is provided at a position facing the first surface 110a. In FIG. 2, the portion 110b1 is provided parallel to the first surface 110a. The portion 110b1 and the side surface of the opening 110c intersect. In this example, the portion 110b1 and the side surface of the opening 110c are orthogonal.

The portion 110b2 is provided so as to surround the outside of the portion 110b1. Like the portion 110b1, the portion 110b2 is provided at a position facing the first surface 110a. In FIG. 2, the portion 110b2 is provided so as to have a portion parallel to the first surface 110a. In this example, the portion 110b2 is provided parallel to the first surface 110a. A distance D110b2 from the first surface 110a to the portion 110b2 is smaller than a distance D110b1 from the first surface 110a to the portion 110b1. In this example, the distance D110b2 from the first surface 110a to the portion 110b2 is preferably smaller than the distance D110b1 from the first surface 110a to the portion 110b1 within a range of 50 μm or more and 150 μm or less. Specifically, the distance D110b2 from the first surface to the portion 110b2 is preferably 100 μm or more and 750 μm or less, preferably 200 μm or more and 350 μm or less.

The portion 110b3 is provided to connect the portions 110b1 and 110b2. As shown in FIG. 2, the distance D110b3 from the first surface 110a to the portion 110b3 gradually decreases from the end E110b1 of the portion 110b1 to the end E110b2 of the portion 110b2. That is, the distance D110b3 is continuously reduced from the end E110b1 to the end E110b2. Also, in this example, the portion 110b3 has a flat surface. Further, in FIG. 2, an extension line L110b2 of the portion 110b2 and the portion 110b3 have a predetermined angle θ110b3.

A crystalline material is used for the substrate 110 . In this example, single crystal silicon is used as the substrate 110 .

In this embodiment, the principal plane orientation of the substrate 110 is preferably the (100) plane. This is because a desired shape can be obtained when performing anisotropic etching by wet etching in the manufacturing method described later. At this time, when single crystal silicon is used for the substrate 110 and the main surface orientation of the second surface 110b is (100), the angle θ110b3 is 54° or more and 55° or less (more specifically, 54.6°). It is preferred to have The plane orientation of the portion 110b3 at this time is the (111) plane.

As shown in FIG. 2, the membrane 120 has a transparent portion 120a which has a rectangular opening and transmits an electron beam. Single crystal silicon is used for the membrane 120 in this example. Note that the thickness of the membrane 120 is not limited as long as it can block electron beams. In this example, the membrane 120 has a thickness of 1 μm or more and 20 μm or less.

An insulating layer 115 is provided between the substrate 110 and the membrane 120 . Silicon oxide is used for the insulating layer 115 . Substrate 110 and insulating layer 115 have the function of supporting membrane 120 .

The first surface 110a of the substrate 110 includes a portion 110a1 (also referred to as a fourth portion) overlapping the insulating layer 115, a portion 110a2 (also referred to as a fifth portion) provided to surround the portion 110a1, have The portion 110a1 is provided so as to surround the outside of the opening 110c. It is desirable that the portion 110a2 and the portion 110b2 overlap. Also, at this time, the width W110a2 of the portion 110a2 is preferably wider than the width W110b2 of the portion 110b2. As a result, a tapered groove can be formed on the back surface (second surface 110b) of the substrate 110, which is close to the outer dimensions of the mask. . As a result, it becomes easier to design the distance between the lower surface of the mask and the upper surface of the mask holder to be short, and even if the mask is set in the holder in an inclined state, the height variation is reduced.

(1-3. Manufacturing method of mask for charged particle beam exposure)
Next, a method for manufacturing a charged particle beam exposure mask according to this embodiment will be described with reference to FIGS. 4 to 16. FIG.

First, as shown in FIG. 4, a structure 130 for forming the charged particle beam exposure mask 100 is prepared. Here, structure 130 has substrate 110 , insulating layer 115 and thin film layer 119 .

Although the thickness of the substrate 110 is not particularly limited, a substrate having a thickness of 100 μm or more and 800 μm or less can be used, for example. Considering workability, the thickness of the substrate 110 is preferably 200 μm or more and 400 μm or less. As the substrate 110 becomes thinner, the deflection of the substrate may increase. As a result, handling in the manufacturing process becomes difficult, and when the substrate is processed to form a charged particle beam exposure mask, the substrate is distorted due to internal stress, which causes the membrane 120 to deform. On the other hand, if the substrate is thick, the process of etching the substrate 110 may be lengthened. As a result, the manufacturing process is lengthened and the manufacturing cost is increased.

A crystalline material is used for the substrate 110 . In this example, the substrate 110 is a single crystal silicon substrate.

An insulating layer 115 is formed to cover the substrate 110 . The film thickness of the insulating layer 115 is 1 μm or more and 10 μm or less. A silicon oxide film is used for the insulating layer 115 in this example. The thin film layer 119 has a film thickness of 1 μm or more and 20 μm or less. It is provided on the insulating layer 115 on the side of the first surface 110a of the substrate 110, and a single crystal silicon film is used in this example. In addition, as shown in FIG. 5, an alignment marker 119m (pattern) may be formed on the thin film layer 119 .

Note that the structure 130 may be an SOI (Silicon on Insulator) substrate in which a single crystal silicon substrate, a silicon oxide film, and a single crystal silicon film are combined.

A masking layer 121 is then formed over the substrate 110 and the thin film layer 119, as shown in FIG. At this time, the masking layer 121 functions as a hard mask. As the masking layer 121, a metal material such as silicon oxide, chromium or aluminum can be used. Masking layer 121 is preferably etchable by the same method as insulating layer 115 . In this example, the masking layer 121 is made of silicon oxide with a thickness of 100 nm formed by thermal oxidation.

Next, as shown in FIG. 7, a portion of the masking layer 121 and the insulating layer 115 on the second surface 110b side of the substrate 110 is removed to form an opening 115a. This exposes a portion of the substrate 110 . The opening 115a is formed by dry etching. For example, if masking layer 121 and insulating layer 115 are silicon oxide, dry etching using trifluoromethane (CHF ₃ ) gas or hexafluoroethane (C ₂ F ₆ ) gas can be performed. Since dry etching has anisotropy, it is possible to form a pattern having a size substantially as designed. When the masking layer 121 and the insulating layer 115 are etched by wet etching, hydrofluoric acid or a chemical solution containing hydrofluoric acid may be used as an etchant.

Next, as shown in FIG. 8, the substrate 110 is etched such that the second surface 110b of the substrate 110 exposed through the opening 115a has a portion parallel to the first surface 110a. In this example, the second surface 110b of the substrate 110 is etched by a wet etching method. If the substrate 110 is single crystal silicon, it is preferable to use an alkaline solution. In this example, the wet etch can use 4-methyl ammonium hydroxide (TMAH). The alkaline solution is not limited to TMAH, and KOH aqueous solution, ethylenediamine-pyrocatechol (EDP) solution, etc. may be used. The depth to which the substrate 110 is etched can be determined by time. In this example, the etching is performed in the depth direction in the range of 50 μm or more and 150 μm or less. At this time, the marker 110m may also be provided on the second surface side 110b as appropriate.

Here, when single-crystal silicon is etched with an alkaline solution, the etching rate of single-crystal silicon differs depending on the difference in plane orientation. In particular, when the plane orientation is the (100) plane, the etching rate of single crystal silicon is higher than other plane orientations. As a result, the substrate 110 is anisotropically etched, and a tapered groove 111 (also referred to as a first groove) is formed in the second surface 110b of the substrate 110 . The plane orientation of the tapered side surface 111b of the groove 111 is the (111) plane. At this time, it is desirable that the bottom surface 111a of the groove 111 is parallel to the first surface 110a of the substrate 110 . The bottom surface 111a and the side surface 111b are connected. Moreover, the bottom surface 111a and the side surface 111b have a predetermined angle. In this example, the angle between the bottom surface 111a and the side surface 111b is 125° or more and 126° or less (specifically, 125.4°).

Further, as shown in FIG. 9, after forming the grooves 111, the insulating layer on the second surface 110b side of the substrate 110 may be removed. This prevents the charged particle beam exposure mask 100 from being caught when it is fixed to the fixing jig. Also, the formed masking layer 121 may be appropriately removed and formed again as a hard mask. FIG. 10 is a plan view showing a portion of the substrate 110 after the above processing is completed. FIG. 11 is an optical microscope observation photograph showing a portion of the substrate 1010 . As shown in FIGS. 10 and 11, the grooves 111 are connected in a grid pattern. At this time, the grooves 111 are widened at the corner portions of each grating.

Next, as shown in FIG. 12, the thin film layer 119 is formed with an opening 119a (also referred to as a first opening) and a groove 119b (also referred to as a second groove). The opening 119a is formed by dry etching. Thereby, a pattern corresponding to the transmissive portion 120a of the membrane 120 of the charged particle beam exposure mask is formed. The groove portion 119 b may overlap with the groove portion 111 . The presence of the grooves 119b prevents dust from adhering to the top of the thin film layer 119 (membrane 120) in the dicing process, which will be described later. At this time, the width W111 of the groove portion 111 is preferably wider than the width W119b of the groove portion 119b.

If thin film layer 119 is single crystal silicon, it can be etched using carbon tetrafluoride (CF ₄ ), sulfur hexafluoride (SF ₆ ), or hydrogen bromide (HBr). At this time, an organic resin resist may be used. The resist may be removed using an organic solvent, or ashing such as oxygen plasma treatment may be used. Here, after removing the resist, the substrate may be dried by IPA drying.

Next, as shown in FIG. 13, etching is performed from the second surface 110b to the first surface 110a of the substrate 110 until reaching at least the insulating layer 115 to form an opening 110c (also referred to as a second opening). The opening 110c overlaps with the opening 119a. Etching of the substrate 110 can be performed by a dry etching method. Here, the dry etching can be performed under the same conditions as the etching of single crystal silicon described above. In this example, _SF6 is used to etch while _C4F8 is used to cover the sidewalls _of the opening 110c to enable a high aspect ratio deep RIE for single crystal silicon substrates. You may

Next, as shown in FIG. 14, the masking layer 121 and the insulating layer 115 exposed at the opening 110c are removed. Here, the masking layer 121 and the insulating layer 115 exposed inside the opening 110c may be removed in the same step, and the masking layer 121 and the insulating layer 115 exposed inside the opening 110c are removed. They may be carried out in separate steps. The above steps can be performed by a dry etching method. Through the above steps, the thin film layer 119 having a thickness of 1 μm or more and 20 μm or less remains, and the membrane 120 is formed.

At this time, the substrate 110 and the membrane 120 may be washed as appropriate. As cleaning, SPM cleaning, APM cleaning, and hydrofluoric acid cleaning can be used. After washing, the substrate may be dried by IPA drying. APM cleaning is also called ammonia hydrogen peroxide water cleaning, and uses a chemical solution mixed with ammonia (NH ₄ OH):H ₂ O ₂ :H ₂ O = 1:2:5 and heated to 70°C to 80°C. can remove organic matter and insoluble particles.

Next, as shown in FIG. 15, a dicing process is performed to cut the substrate 110 at predetermined positions. FIG. 16 is a plan view of a portion of substrate 110 during cutting. As shown in FIGS. 15 and 16, a dicing process is performed so as to separate at the bottom surface 111a of the groove 111 (so that the dividing line 125 passes through the bottom surface 111a). Thereby, the shape of the second surface 110b of the substrate 110 after dicing can be stabilized. Moreover, it is desirable to perform the dicing process from the first surface 110a side. As a result, dicing can be performed without touching the formed membrane 120 because the dicing tape is attached to the second surface 110b for cutting. In this example, a dicing (laser dicing) process is performed by a laser irradiation method. In the case of laser dicing, cutting may be performed through the dicing tape. Laser dicing is performed on the groove portion 119 b overlapping the groove portion 111 . When performing laser dicing, the thickness of the substrate 110 is desirably 200 μm or more and 350 μm or less. As a result, the processing time for dicing can be shortened, and defects during dicing can also be reduced. In the case of laser dicing, dicing may be performed so as to remove the corner portions of the portions corresponding to each mask. At this time, as shown in FIG. 16, the substrate 110 becomes octagonal.

(1-4. Placement of Charged Particle Beam Exposure Mask)
FIG. 17 shows a sectional view when the charged particle beam exposure mask 100 of this embodiment is installed on the fixing jig 200 in the electron beam exposure apparatus 1. As shown in FIG. As shown in FIG. 17, the charged particle beam exposure mask 100 is in line contact with the fixture 200 by having the tapered portion 110b3. As a result, the position of the charged particle beam exposure mask 100 can always be stabilized. Moreover, even if the charged particle beam exposure mask 100 is misaligned, it can be minimized by having the portion 110b3. Furthermore, by having the portion 110b3, only the portion 110b3 and the fixing jig 200 are in contact with each other, so that other portions of the charged particle beam exposure mask 100 can be prevented from being damaged. Therefore, by using this embodiment, it is possible to easily and stably form a desired pattern shape using a charged particle beam exposure mask. In addition, in the case of this embodiment, since the contact portion between the charged particle beam exposure mask and the fixing jig is small, the generation of dust at the time of contact is suppressed.

(Modification)
It should be noted that within the scope of the idea of the present disclosure, those skilled in the art can conceive of various modifications and modifications, and it is understood that these modifications and modifications also fall within the scope of the present invention. . For example, additions, deletions, or design changes of components, or additions, omissions, or changes in conditions of the above-described embodiments by those skilled in the art are also subject to the gist of the present invention. is included in the scope of the present invention as long as it has

Also, in the first embodiment of the present disclosure, an example of using an SOI substrate in manufacturing a mask for charged particle beam exposure has been described, but the present invention is not limited to this. For example, in addition to silicon substrates, silicon compound substrates such as silicon carbide, compound semiconductor substrates such as gallium arsenide, and metal substrates such as stainless steel and aluminum may be used as materials having crystallinity. Moreover, what laminated these may be used.

Further, in the first embodiment of the present disclosure, the portion 110b3 has a symmetrical shape, the portion 110b3 of the second surface 110b in the substrate 110 is flat, and the extension line L110b2 of the portion 110b2 and the portion 110b3 Although an example with a predetermined angle is shown, it is not limited to this. FIG. 18 shows a cross-sectional view of the charged particle beam exposure mask 100A. FIG. 19 shows a sectional view of the charged particle beam exposure mask 100B. For example, as shown in FIG. 18, in the charged particle beam exposure mask 100A, the portion 110b3 may have a convex surface. Further, as shown in FIG. 19, the charged particle beam exposure mask 100B may have a concave surface.

Also, in the first embodiment of the present disclosure, an example of dicing by a laser irradiation method was shown, but the present invention is not limited to this. FIG. 20 is a plan view of a portion of substrate 110 during cutting. For example, the substrate 110 may be diced by a blade method (blade dicing). In the case of blade dicing, it is necessary to consider the cut portion when designing. In this case, dicing may be provided so that the division lines 125 are orthogonal to each mask.

Further, in the first embodiment of the present disclosure, an example in which the grooves 111 are connected in a grid pattern has been described, but the present invention is not limited to this. FIG. 21 is a plan view after the groove 111 is formed. FIG. 22 is a plan view of a portion of substrate 110 during cutting. As shown in FIG. 21, the grooves 111 may not be provided in a grid pattern, but may be provided separately. At this time, as shown in FIG. 22, when cutting the substrate 110 to form each charged particle beam exposure mask 100, it is possible to control the area of the corner portion cut off by dicing. Thereby, the area of the membrane 120 can be expanded. Also, the degree of freedom in designing the chamfered portion of the mask corner is increased.

DESCRIPTION OF SYMBOLS 1... Electron beam exposure apparatus, 10... Electron beam source, 20... Lens, 30... Deflector, 100... Charged particle beam exposure mask, 110... Substrate, 110a... First surface 110b Second surface 110c Opening 111 Groove 111a Bottom 111b Side 115 Insulating layer 115a Opening Part 119 Thin film layer 119a Opening 119b Groove 120 Membrane 120a Transmission part 121 Masking layer 121a Opening 130 ... structure, 200 ... fixing jig

Claims (19)

a substrate having a first surface, a second surface provided opposite to the first surface, and an opening extending from the first surface to the second surface;
a membrane having a transmission part in a portion overlapping the opening,
the second surface of the substrate includes a first portion that surrounds the opening and is provided at a position facing the first surface;
a second portion provided so as to surround the outside of the first portion, provided at a position facing the first surface of the substrate, and having a smaller distance to the first surface than the first portion;
A third portion provided to connect the first portion and the second portion, wherein the second portion extends from the end portion of the first portion when viewed in a cross section perpendicular to the first surface. a third portion in which the distance from the first surface to the third portion continuously decreases toward the end of
Mask for charged particle beam exposure. The third portion is planar,
An extension of the second portion and the third portion form a predetermined angle when viewed in cross section,
A mask for charged particle beam exposure according to claim 1 . wherein the substrate is a crystalline material;
3. The mask for charged particle beam exposure according to claim 2. the substrate is silicon,
4. The mask for charged particle beam exposure according to claim 3. 5. The mask for charged particle beam exposure according to claim 4, wherein the principal plane orientation of the second plane is the (100) plane. The predetermined angle is 54° or more and 55° or less,
5. The mask for charged particle beam exposure according to claim 4. 5. The mask for charged particle beam exposure according to claim 4, wherein said substrate has a thickness of 200 [mu]m or more and 800 [mu]m or less. 6. The mask for charged particle beam exposure according to claim 5, wherein the thickness from said first surface of said substrate to said second portion of said second surface is 200 [mu]m or more and 750 [mu]m or less. The first surface of the substrate has a fourth portion that surrounds the opening of the substrate and a fifth portion that surrounds the outside of the fourth portion, and the The charged particle beam exposure mask according to any one of claims 1 to 6, wherein the fifth portion overlaps the second portion of the second surface. 10. The mask for charged particle beam exposure according to claim 9, wherein the width of said fifth portion of said first surface is greater than the width of said second portion of said second surface. a substrate having a first surface and a second surface opposite to the first surface; an insulating layer provided to surround the substrate; and an insulating layer provided on the insulating layer on the first surface side of the substrate using a structure including a thin film layer coated with
removing a portion of the insulating layer on the second surface side of the substrate to expose the substrate;
The exposed portion of the substrate has a bottom surface portion parallel to the first surface, and a frame-shaped second substrate is formed by etching such that the bottom surface portion and the side surface portion connected to the bottom surface portion have a predetermined angle. 1 groove is formed,
forming a first opening by etching a portion of the thin film layer inside the first groove when viewed from the first surface side;
forming a second opening by etching a portion of the substrate that overlaps at least the first opening;
dicing the substrate so that it is separated at the bottom portion of the first groove;
A method for manufacturing a mask for charged particle beam exposure. forming a frame-shaped second groove superimposed on the first groove when forming the first opening;
The second groove overlaps with the first groove,
12. The method of manufacturing the charged particle beam exposure mask according to claim 11. removing the insulating layer on the second surface side of the substrate after forming the first groove;
removing the insulating layer exposed by the second opening after forming the second opening;
13. The method of manufacturing a charged particle beam exposure mask according to claim 11 or 12. wherein the substrate is a crystalline material;
14. The method of manufacturing a charged particle beam exposure mask according to any one of claims 11 to 13. the substrate is silicon,
15. The method of manufacturing the charged particle beam exposure mask according to claim 14. etching the first groove using an alkaline solution;
16. The method of manufacturing the charged particle beam exposure mask according to claim 15. The principal plane orientation of the second plane is the (100) plane,
17. The method of manufacturing a mask for charged particle beam exposure according to claim 16. The predetermined angle is 125° or more and 126° or less,
18. The method of manufacturing the charged particle beam exposure mask according to claim 17. The substrate has a thickness of 200 μm or more and 400 μm or less.
19. A method for manufacturing a mask for charged particle beam exposure according to claim 18.

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