JP7219524B2 - コンタクトにおいて黒鉛インタフェースを備えるグラフェンfet - Google Patents
コンタクトにおいて黒鉛インタフェースを備えるグラフェンfet Download PDFInfo
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- JP7219524B2 JP7219524B2 JP2021148228A JP2021148228A JP7219524B2 JP 7219524 B2 JP7219524 B2 JP 7219524B2 JP 2021148228 A JP2021148228 A JP 2021148228A JP 2021148228 A JP2021148228 A JP 2021148228A JP 7219524 B2 JP7219524 B2 JP 7219524B2
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims description 188
- 229910021389 graphene Inorganic materials 0.000 title claims description 93
- 229910002804 graphite Inorganic materials 0.000 title claims description 40
- 239000010439 graphite Substances 0.000 title claims description 40
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- 239000002184 metal Substances 0.000 claims description 71
- 239000002041 carbon nanotube Substances 0.000 claims description 42
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- 239000004065 semiconductor Substances 0.000 claims description 16
- 229910044991 metal oxide Inorganic materials 0.000 claims description 10
- 150000004706 metal oxides Chemical class 0.000 claims description 10
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- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052689 Holmium Inorganic materials 0.000 claims description 2
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- 229910052777 Praseodymium Inorganic materials 0.000 claims description 2
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- 229910052769 Ytterbium Inorganic materials 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 229910052735 hafnium Inorganic materials 0.000 claims description 2
- 229910052719 titanium Inorganic materials 0.000 claims description 2
- 229910052720 vanadium Inorganic materials 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
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- 229910021393 carbon nanotube Inorganic materials 0.000 description 38
- 238000000034 method Methods 0.000 description 26
- 239000007789 gas Substances 0.000 description 12
- 239000007833 carbon precursor Substances 0.000 description 9
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 9
- 125000004432 carbon atom Chemical group C* 0.000 description 8
- 238000000137 annealing Methods 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- 238000000151 deposition Methods 0.000 description 6
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 229910003481 amorphous carbon Inorganic materials 0.000 description 5
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 5
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
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- 238000000354 decomposition reaction Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000011065 in-situ storage Methods 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 3
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- 150000002739 metals Chemical class 0.000 description 3
- 239000002243 precursor Substances 0.000 description 3
- DSSYKIVIOFKYAU-XCBNKYQSSA-N (R)-camphor Chemical compound C1C[C@@]2(C)C(=O)C[C@@H]1C2(C)C DSSYKIVIOFKYAU-XCBNKYQSSA-N 0.000 description 2
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- 230000000694 effects Effects 0.000 description 2
- 125000002534 ethynyl group Chemical group [H]C#C* 0.000 description 2
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 2
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- 239000002048 multi walled nanotube Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
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- 229910052697 platinum Inorganic materials 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
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- 239000002109 single walled nanotube Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 1
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 1
- 239000005977 Ethylene Substances 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- GTDPSWPPOUPBNX-UHFFFAOYSA-N ac1mqpva Chemical compound CC12C(=O)OC(=O)C1(C)C1(C)C2(C)C(=O)OC1=O GTDPSWPPOUPBNX-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 229910021387 carbon allotrope Inorganic materials 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 235000021190 leftovers Nutrition 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910021404 metallic carbon Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910003465 moissanite Inorganic materials 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052763 palladium Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- FVDOBFPYBSDRKH-UHFFFAOYSA-N perylene-3,4,9,10-tetracarboxylic acid Chemical compound C=12C3=CC=C(C(O)=O)C2=C(C(O)=O)C=CC=1C1=CC=C(C(O)=O)C2=C1C3=CC=C2C(=O)O FVDOBFPYBSDRKH-UHFFFAOYSA-N 0.000 description 1
- 229920002120 photoresistant polymer Polymers 0.000 description 1
- 229920000052 poly(p-xylylene) Polymers 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000000079 presaturation Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 229910052703 rhodium Inorganic materials 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 241000894007 species Species 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 description 1
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Description
CNTの表面を低減する。
Claims (7)
- グラフェン電界効果トランジスタ(FET)を有する半導体デバイスであって、前記グラフェンFETが、
基板上のグラフェン層であって、グラフェン表面を有する、前記グラフェン層と、
ソースコンタクト領域における第1の開口とドレインコンタクト領域における第2の開口とを備える金属酸化物層と、
前記第1の開口における前記グラフェン層の上にソースコンタクトを提供する第1の金属部分と、前記第2の開口における前記グラフェン層の上にドレインコンタクトを提供する第2の金属部分とを含む金属層であって、少なくとも1017atms/cm3の炭素濃度を含み、Ni、Co、Cu、Ru、又はPdを含む、前記金属層と、
前記ソースコンタクトと前記グラフェン層との間と前記ドレインコンタクトと前記グラフェン層との間との黒鉛インタフェース層と、
前記グラフェン層の一部の上の頂部ゲート構造とバックゲート構造とのうち少なくとも一方のゲート構造と、
を含む、半導体デバイス。 - 請求項1に記載のFETであって、
前記金属酸化物層が、Al、Ti、Hf、Zr、V、Y、La、Ce、Pr、Nd、Pm、Sm、Eu、Gd、Tb、Dy、Ho、Er、Tm、Yb又はLuを含む、半導体デバイス。 - 請求項2に記載の半導体デバイスであって、
前記金属層がNiを含む、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
グラフェン層がカーボンナノチューブ(CNT)の形態である、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記黒鉛インタフェース層が、2~30層のグラフェンを含む、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記黒鉛インタフェース層がBernal積層される、半導体デバイス。 - 請求項1に記載の半導体デバイスであって、
前記基板がシリコンを含む、半導体デバイス。
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