JP7219391B2 - light emitting element - Google Patents

Description

Embodiments of the present invention relate to light emitting devices.

Conventionally, in a semiconductor laminate of n-type and p-type semiconductor layers, a portion of the p-type semiconductor layer is removed to expose the n-type semiconductor layer, and an n-electrode is formed thereon. A light-emitting device has been proposed in which a p-electrode is formed substantially over the entire surface and the electrode-formed surface of the semiconductor laminate is used as a light extraction surface. In order to further improve light extraction in such a light-emitting device, it has been proposed to form a through hole in the p-electrode to suppress light absorption by the p-electrode and improve light extraction efficiency. (Patent Document 1, etc.).

JP 2012-59791 A

However, with the recent trend toward higher luminance and higher light output of light-emitting elements, there is a demand for further improvement in light extraction efficiency.
The embodiments of the present invention have been made in view of the above problems, and an object thereof is to provide a light-emitting element capable of further improving light extraction efficiency.

An invention according to one embodiment of the present invention is shown below.
an n-type semiconductor layer;
a p-type semiconductor layer provided in a region excluding part of the upper surface of the n-type semiconductor layer;
an n-side electrode having an n-side external connection portion electrically connected to a portion of the upper surface of the n-type semiconductor layer and an n-side extension portion extending from the n-side external connection portion;
a translucent conductive film electrically connected to the p-type semiconductor layer;
A light-emitting element comprising a p-side electrode having a p-side external connection portion disposed on the upper surface of the conductive film and a p-side extension portion extending from the p-side external connection portion toward the n-side external connection portion. There is
The conductive film has a plurality of through-holes,
The plurality of through-holes, in plan view, have an elongated shape provided along a first direction parallel to the shortest line connecting the tip of the p-side extension portion and the n-side external connection portion. A first through-hole and a second through-hole having an elongated shape provided along a second direction different from the first direction and in which the n-side extending portion and the p-side extending portion face each other. A light-emitting element having at least a hole.

According to the embodiments of the present invention, it is possible to provide a light-emitting device capable of further improving light extraction efficiency.

FIG. 2 is a schematic plan view for explaining the arrangement of electrodes in the light emitting device of one embodiment of the present invention; 1B is a cross-sectional view taken along the line I-I' of FIG. 1A; FIG. 1B is a schematic plan view for explaining a through-hole in a conductive film of the light-emitting element in FIG. 1A; FIG. FIG. 1B is a diagram showing a simulation of the current flow of the light emitting element in FIG. 1A;

In the embodiments of the present invention, the sizes and positional relationships of members shown in each drawing may be exaggerated for clarity of explanation. In the following description, the same names and symbols denote the same or homogeneous members, and detailed description thereof will be omitted as appropriate.

As shown in FIGS. 1A, 1B, and 1C, the light-emitting device 10 of the embodiment of the present invention mainly includes an n-type semiconductor layer 11, a p-type semiconductor layer 12, an n-side electrode 21, and a p-type semiconductor layer. 12 and includes a conductive film 15 having a plurality of through holes, and a p-side electrode 22 . The through-holes include a first through-hole 15A having an elongated shape provided along a predetermined direction, and a second through-hole 15B having an elongated shape provided along a different direction. .
Thus, in order to supply a current to the p-type semiconductor layer 12 through the conductive film 15 having a plurality of elongated through-holes extending in different directions, the through-holes are arranged along the current direction. As a result, the current in the conductive film 15 can be effectively diffused without being hindered, so that an increase in the forward voltage Vf can be efficiently suppressed. In addition, by reducing the light absorption by the conductive film 15 arranged on substantially the entire surface of the p-type semiconductor layer 12, the light extraction efficiency can also be improved.

(n-type semiconductor layer 11 and p-type semiconductor layer 12)
The n-type semiconductor layer 11 and the p-type semiconductor layer 12 are composed of semiconductor layers, and usually a light-emitting layer 13 is provided between them. It is constructed by stacking. The type and material of the semiconductor layer are not particularly limited, and nitride semiconductor materials such as _{InxAlyGa1 -XYN (} 0≤X, 0≤Y, X+Y≤1) are preferable.
The n-type semiconductor layer 11 , the light-emitting layer 13 and the p-type semiconductor layer 12 are usually laminated on the substrate 16 . Materials for the substrate 16 include insulating substrates such as sapphire (Al ₂ O ₃ ), silicon carbide (SiC), Si, GaAs, and oxide substrates such as lithium niobate and neodymium gallate which are lattice-bonded with nitride semiconductors. etc. When using a nitride semiconductor as the semiconductor layer, it is preferable to use a substrate 16 made of sapphire (Al ₂ O ₃ ). Substrate 16 may be finally removed from light emitting device 10 . As a method for removing the substrate 16, a known laser lift-off method can be used. When the planar shape of the substrate 16 is square, the length of one side of the substrate 16 can be approximately 300 μm to 3000 μm, preferably approximately 500 μm to 1500 μm.
The p-type semiconductor layer 12 is provided in a region excluding a portion of the upper surface of the n-type semiconductor layer 11 . In other words, in a partial region where the n-type semiconductor layer 11, the light-emitting layer 13, and the p-type semiconductor layer 12 are stacked, at least the light-emitting layer 13 and the p-type semiconductor layer 12 are removed, leaving the n-type semiconductor layer 11 An exposed region exposed from the light emitting layer 13 and the p-type semiconductor layer 12 is provided. The exposed region may be the outer peripheral region of the light emitting element 10 in a plan view, or may be continuously provided inwardly from the outer peripheral region. Also, the entire periphery of the exposed region may be surrounded by the p-type semiconductor layer 12 .

(n-side electrode 21 and p-side electrode 22)
The n-side electrode 21 is directly or indirectly electrically connected to part of the upper surface of the n-type semiconductor layer 11, and the p-side electrode 22 is directly or indirectly electrically connected to the upper surface of the p-type semiconductor layer 12. ing. In particular, as shown in FIG. 1B, between the p-side electrode 22 and the p-type semiconductor layer 12 is an insulating film 14 having a width equal to or slightly wider than the width of the p-side electrode 22 . It is preferably arranged through The n-side electrode 21 has an n-side external connection portion 21a and an n-side extension portion 21b extending from the n-side external connection portion 21a. The p-side electrode 22 has a conductive film 15, a p-side external connection portion 22a, and p-side extension portions 22b and 22c extending from the p-side external connection portion 22a.
For the n-side electrode 21 and the p-side electrode 22, for example, a single layer film or a multilayer film made of metals such as Ni, Rh, Cr, Au, W, Pt, Ti, and Al, or alloys thereof can be used. Among them, it is preferable to use a laminated multilayer film such as Ti/Pt/Au or Ti/Rh/Au for the n-side electrode 21 and the p-side electrode 22 .
Note that the n-side electrode 21 and the p-side electrode 22 both ensure insulation in the n-side external connection portion 21a and the p-side external connection portion 22a, which will be described later, except for a region connected to an external connection member. For protection, its surface is preferably coated with a protective film 17, as shown in FIG. 1B.

(n-side external connection portion 21a and p-side external connection portion 22a)
The n-side external connection portion 21a and the p-side external connection portion 22a are electrodes for connecting to an external connection member such as a conductive wire, for example, in order to supply current to the light emitting element 10 .
The n-side external connection portion 21 a and the p-side external connection portion 22 a are provided on the light extraction surface side of the light emitting element 10 . The n-side external connection portion 21 a and the p-side external connection portion 22 a are provided on the same surface side of the light emitting element 10 . In the light-emitting element 10 having a square shape in plan view, one n-side external connection portion 21a is arranged near one side, and one p-side external connection portion 22a is arranged near the other side opposite to the one side. It is preferable that Thereby, the current can be diffused over a wide area of the light emitting element 10 . A plurality of n-side external connection portions 21a and p-side external connection portions 22a may be arranged.
For example, the n-side external connection portion 21a and the p-side external connection portion 22a are formed in regions on the midline or on the diagonal line of the light-emitting element whose planar shape is a quadrangle such as a square, a rectangle, or a polygon such as a hexagon, respectively. is preferably provided. This facilitates ensuring uniform light emission over the entire light emitting surface while reducing the driving voltage of the light emitting element.
The shape of the n-side external connection portion 21a and the p-side external connection portion 22a can be appropriately adjusted depending on the size of the light emitting element, the arrangement of the electrodes, etc., and can be circular, regular polygonal, or the like. . Of these, a circular shape or a shape similar thereto is preferable in consideration of ease of wire bonding. The sizes of the n-side external connection portion 21a and the p-side external connection portion 22a can be appropriately adjusted depending on the size of the light emitting element, the arrangement of the electrodes, etc., and the n-side external connection portion 21a and the p-side external connection portion 22a is preferably about 5% to 30% or about 5% to 20% of the length of one side of the light emitting element. The shape and size of the n-side external connection portion 21a and the p-side external connection portion 22a may be different from each other, but are preferably the same. By making the shape and size of the n-side external connection portion 21a and the p-side external connection portion 22a the same, it becomes easier to equalize the currents supplied to the respective external connection portions.

(n-side extending portion 21b and p-side extending portions 22b and 22c)
The n-side external connection portion 21a has an n-side extension portion 21b extending from the n-side external connection portion 21a.
The p-side external connection portion 22a has p-side extension portions 22b and 22c extending from the p-side external connection portion 22a. For example, there may be only one n-side extending portion 21b and p-side extending portions 22b and 22c, or there may be two or more. The shape, size, etc. of the extending portion can be appropriately set according to the planar shape and size of the light emitting element. For example, the shape of the extension may be straight, curved, curved, branched, or a combination thereof. For example, the shape of the extending portion includes a shape extending toward the p-side extending portion 22b or the n-side external connection portion 21a, and a shape extending toward both sides of the p-side or n-side external connection portion 21a. In addition, when both the p-side external connection portion 22a and the n-side extension portion 21a are present in a shape extending outward so as to surround the p-side external connection portion 22a or the n-side external connection portion 21a, A shape that extends inwardly or outwardly, and the like are included.
The thickness of the n-side extending portion 21b and the p-side extending portions 22b, 22c may be smaller than the maximum width of the n-side external connection portion 21a and the p-side external connection portion 22a, for example, 5% to 90% of the maximum width. , 5% to 70%, 5% to 30%, 5% to 20%, and 5% to 15%. The extension may be of the same width over its entire length, or it may vary in part. The length of one extending portion can be appropriately set depending on the formation position, shape, etc., and examples thereof include 20% to 150% and 30% to 120% of one side or diagonal of the light emitting element. The n-side extending portions 21b and the p-side extending portions 22b and 22c may have different numbers, different shapes, and different thicknesses, or may have the same number, the same shape, and the same thickness.

When the n-side electrode 21 is arranged inside the light emitting element 10 and the p-side electrode 22 is arranged outside thereof, as shown in FIG. and a straight portion extending toward both sides of the p-side external connection portion 22a. The p-side extending portion 22b may have a shape in which a curved portion and a straight portion are combined to surround the n-side extending portion 21b and the n-side external connection portion 21a. The p-side extending portion 22c may have a straight shape extending in the shortest direction toward the n-side external connection portion 21a.
The n-side extending portion 21b and the p-side extending portions 22b and 22c have portions facing each other or have portions arranged parallel to each other so that the current can be diffused uniformly. It is preferable that the portions facing each other have portions arranged parallel to each other.

By arranging the n-side external connection portion 21a, the p-side external connection portion 22a, the n-side extension portion 21b, and the p-side extension portions 22b and 22c in this manner, a large current flow can be achieved regardless of the size of the light emitting surface. The voltage application can also keep the forward voltage Vf small while minimizing the shielding of the light emitted from the light emitting surface by the electrodes. As a result, it is possible to realize a light-emitting element with high light output, low forward voltage Vf, and good power efficiency.

(Conductive film 15)
The conductive film 15 is a member for causing the current supplied from the external connection portion to flow uniformly over the entire plane of the semiconductor layer. In order to more efficiently supply current to the entire surface of the n-type semiconductor layer 11 and/or the p-type semiconductor layer 12, the conductive film 15 is provided between the n-side electrode 21 and/or the p-side electrode 22 and the semiconductor layers. It is arranged so as to cover substantially the entire surface of the semiconductor layer. In particular, it is preferable that the translucent conductive film 15 is arranged between the p-type semiconductor layer 12 and the p-side electrode 22 provided thereon. Here, "substantially the entire surface" means an area of about 90% or more of the total area of each semiconductor layer.
Since the conductive film 15 is arranged on the light extraction surface side of the light emitting element, it can be formed of a translucent conductive oxide. Examples of conductive oxides include oxides containing at least one selected from Zn, In, Sn, and Mg, specifically ZnO, _In2O3 , _SnO2 , ITO (Indium Tin Oxide), _IZO (Indium Tin Oxide), and IZO (Indium Tin Oxide). Zinc Oxide), GZO (Gallium-doped Zinc Oxide), and the like. In particular, a conductive oxide such as ITO can be preferably used because it has high light transmittance in visible light (visible region) and is a material with relatively high electrical conductivity. The thickness of such a conductive film is, for example, preferably 10 nm to 150 nm, more preferably 30 nm to 100 nm.

The conductive film 15 has a plurality of through holes penetrating from the upper surface side to the lower surface side of the conductive film 15 . The through-hole has an elongated shape such as a rectangle, polygon, or ellipse in plan view. The depth of the through hole matches the thickness of the conductive film 15 .
The elongated shape includes a shape having a short axis and a long axis extending linearly perpendicularly to the short axis, and a shape in which the long axis is bent or curved in such a shape. For example, an elongated shape in which the length of the long axis is 2 to 10 times, preferably 2 to 5 times the length of the short axis can be employed. All or part of the through-holes may have the same size, or may have different sizes. As for the size, for example, the longest dimension is 10 μm or less, that is, the long axis is 10 μm or less. The size of the through-holes may be 3 μm to 10 μm and 1 μm to 3 μm in the long axis and the short axis, respectively, in other words, 3 μm ² to 30 μm ² .
The aperture ratio of the through holes in the conductive film 15 is preferably 30% or less, more preferably 15% or less, and even more preferably 10% or less. By providing the through holes having an aperture ratio of 30% or less in the conductive film 15, the light extraction efficiency can be improved, and at the same time, an increase in the forward voltage Vf can be suppressed. Uniform light emission can be ensured over the entire light emitting surface while reducing the driving voltage. By providing the conductive film 15 with such through-holes having an aperture ratio of 10% or less, it is possible to suppress an increase in the forward voltage Vf while maintaining the light extraction efficiency.

Some or all of the through-holes are not arranged in the same direction, and include first through-holes 15A and second through-holes 15B arranged in different directions.
In order to define the different directions, for example, the shortest line connecting the tip of the p-side extension portion 22c and the n-side external connection portion 21a is called the first direction, and the n-side extension portion 21b and the p-side extension portion 22c are referred to as the first direction. is called a second direction.
Here, the first direction means a direction parallel to the shortest line connecting the tip of the p-side extending portion 22c and the center or center of gravity of the n-side external connection portion 21a. The second direction means a direction different from the first direction, and is a direction parallel to the shortest line connecting the n-side extending portion 21b and the p-side extending portion 22c in parallel and facing each other. means. If the n-side extending portion 21b and the p-side extending portion 22c do not have parallel facing portions, the second direction means a direction parallel to the shortest line connecting the facing portions.
The first direction and the second direction preferably intersect at about 90±5°, and more preferably orthogonal directions.

The elongated through-holes are arranged along the first direction means that the long axis of the elongated shape of the first through-holes or the shortest line connecting both ends of the through-holes is aligned with the first direction. means to be Further, when the elongated through-holes are arranged along the second direction , it means that the long axis of the elongated shape of the second through-holes or the shortest line connecting both ends of the elongated through-holes is aligned with the second direction. It means to be arranged.
Furthermore, the through-holes preferably have one or more types of through-holes in addition to the first through-holes 15A and the second through-holes 15B described above. The through-hole here means an elongated through-hole arranged along a direction different from the first direction and the second direction . For example, the one or more additional through-holes preferably have an elongated shape along one or more of the directions inclined at ±10° to 80° with respect to the first direction in plan view.
In the present invention, the through-holes arranged in the conductive film 15 are elongated in the direction along the current flow from the p-side electrode 22 to the n-side electrode 21, in other words, substantially parallel to a part of the current flow. Ideally, the slender shape should not be placed in a direction that blocks the current flow. Therefore, over the entire surface of the light-emitting element 10, the elongated direction of the through-holes varies in small increments (for example, every 1° to 10°), and elongated in directions different from the first direction or the second direction. One or more through holes extending in the first or second direction, two or more through holes elongated in different directions from the first direction or the second direction , or extending in different directions from the first or second direction and extending in the first direction. It is preferable that a plurality of types of through-holes are arranged so as to make one rotation including the direction and the second direction .

In one embodiment of the present invention, the light emitting device 10 shown in FIGS. 1A-1C can have a conductive film 15 as described below.
The light emitting element 10 has a substantially square outer edge in plan view. The n-side electrode 21 is arranged inside the light emitting element, and the p-side electrode 22 is arranged so as to surround the n-side electrode 21 . The conductive film 15 is made of ITO (thickness of about 65 nm) and is arranged almost entirely on the entire surface except for the region where the n-side electrode 21 is arranged and the peripheral region of the light emitting element 10 .
The n-side external connection portion 21a and the p-side external connection portion 22a are arranged on the center line of the light emitting element 10 in a circular shape with a diameter of 60 μm.
The n-side extension portion 21b extends from both sides of the n-side external connection portion 21a, and has a curved portion and a straight portion toward both sides of the p-side external connection portion 22a.
The p-side extending portions include a first p-side extending portion 22b extending linearly from the p-side external connecting portion 22a on the midline of the light emitting element 10, and two second p-side extending portions extending from both sides of the p-side external connecting portion 22a. and a side extending portion 22c. The two second p-side extending portions 22c extend outward from the tip of the n-side extending portion 21b so as to surround the n-side external connection portion 21a, and have a curved portion and a straight portion. there is
The linear portion of the n-side extending portion 21b and the linear portion of the second p-side extending portion 22c face each other in parallel. Each of the n-side extending portion 21b and the p-side extending portions 22b and 22c has a thickness of 4 μm.

When current is supplied from the n-side external connection portion 21a and the p-side external connection portion 22a, the current flow is as indicated by the dashed line in FIG. 1D from the simulation results. Accordingly, the through holes including the first through holes 15A and the second through holes 15B of the conductive film 15 are arranged as shown in FIG. 1C according to such current flow. That is, in the conductive film 15, the elongated first through-hole 15A along the first direction (in other words, parallel to the first direction) and the second elongated through-hole 15A substantially perpendicular to the first direction. , elongated second through holes 15B are arranged along the direction of .
Moreover, it is preferable to further have a plurality of types of elongated through-holes along the directions rotated clockwise and counterclockwise respectively from the first direction to the second direction. For example, the through hole 15G inclined by 10°±2° with respect to the first direction, the through hole 15H inclined by 20°±2°, and the through hole 15C inclined by 5°±2° with respect to the second direction. , 10°±2° inclined through hole 15D, 15°±2° inclined through hole 15E, 20°±2° inclined through hole 15F, and the like. In the conductive film 15 located outside the p-side extending portions 22b and 22c of the conductive film 15, the current flows from the p-side external connection portion 22a to the n-side external connection portion 21a. A plurality of through holes are arranged along the current flow.
The elongated through-hole here is, for example, a rectangular shape of 9 μm×2 μm with rounded corners. The opening ratio of the through holes of the conductive film 15 is 10%.

Thus, in order to supply a current to the p-type semiconductor layer 12 through the conductive film 15 having a plurality of through-holes having elongated shapes along different directions, the through-holes are arranged from the p-side electrode 22 to the n-side. It can be arranged along the current to the electrode 21 . That is, by providing the through holes in the conductive film 15 in the direction along the current flow of each part, the p-type semiconductor layer 12 can be uniformly and sufficiently covered with a smaller area without hindering the current flow. Since the current can be diffused, an increase in the forward voltage Vf can be efficiently suppressed. Moreover, by arranging a plurality of through-holes, light absorption by the conductive film 15 arranged on substantially the entire surface of the p-type semiconductor layer 12 can be reduced, thereby improving the light extraction efficiency.
Note that the light-emitting element of the present application can constitute a light-emitting device by packaging. Any of those known in the art can be used for the configuration of packaging and each member required for packaging.

<Evaluation of Optical Output Po and Forward Voltage Vf>
Example 1
An n-type semiconductor layer 11, a light-emitting layer 13, and a p-type semiconductor layer 12 were sequentially formed on a substrate 16 made of sapphire. The n-type semiconductor layer 11, the light emitting layer 13, and the p-type semiconductor layer are made of nitride semiconductors. The substrate 16 has a square shape with a side length of 650 μm. A conductive film 15 made of ITO and having a thickness of about 80 nm was formed on substantially the entire surface of the p-type semiconductor layer 12 . An n-side electrode 21 and a p-side electrode 22 were arranged in the same manner as in the form shown in FIG. 1A. The n-side electrode 21 is connected to the upper surface of the n-type semiconductor layer 11 and has an n-side external connection portion 21a and an n-side extension portion 21b extending from the n-side external connection portion 21a. The p-side electrode 22 is formed on the upper surface of the conductive film 15 and has a p-side external connection portion 22a and p-side extension portions 22b and 22c extending from the p-side external connection portion 22a. A plurality of through-holes were formed in the conductive film 15 in accordance with the flow of current in the same manner as in the form shown in FIG. 1C. Specifically, in the conductive film 15, the shortest line connecting the tip of the p-side extension portion 22c and the n-side external connection portion 21a is formed in a through hole along the first direction, and the n-side extension portion 21b and the p-side A plurality of through-holes were formed, including a through-hole along the second direction facing the extending portion 22c and a through-hole along a direction different from the first direction and the second direction. The elongated through-holes were in the form of 9 μm×2 μm rectangles with rounded corners. Also, the aperture ratio of the through-holes in the conductive film 15 was set to about 10%. The light output and the forward voltage Vf of the light emitting device having the through holes formed in the conductive film 15 were measured.
When the light emitting device according to Example 1 was driven with a current of 65 mA, the optical output Po was 148.3 mW and the forward voltage Vf was 2.90V.

Comparative example 1
A light-emitting device having substantially the same configuration as that of the example was formed as Comparative Example 1, except that the conductive film 15 was not provided with a through hole.
When the light emitting device according to Comparative Example 1 was driven with a current of 65 mA, the optical output Po was 147.7 mW and the forward voltage Vf was 2.89V.

Comparative example 2
A light-emitting element having substantially the same configuration as that of the example was formed as Comparative Example 2, except that the through holes provided in the conductive film 15 were different from those of the example. Specifically, a plurality of through-holes were formed in the conductive film 15 to block the flow of current. That is, in the conductive film 15 of the light emitting element according to Comparative Example 2, the through holes correspond to the plurality of through holes formed in the example, and the direction of the through holes is substantially perpendicular to the direction of the through holes formed in the example. A plurality of through holes were formed.
When the light emitting device according to Comparative Example 2 was driven with a current of 65 mA, the optical output Po was 148.3 mW and the forward voltage Vf was 2.91V.

From these evaluation results, it can be confirmed that the light output Po of the light emitting device according to Example 1 of the present invention can be improved as compared with Comparative Example 1 in which the conductive film 15 is not provided with through holes. In addition, it can be confirmed that the forward voltage Vf can be reduced more than in Comparative Example 2 in which the conductive film 15 is provided with a plurality of through-holes that impede the flow of current. Therefore, it was confirmed that the light emitting device according to the example of the present invention can improve the light extraction efficiency while suppressing the increase of the forward voltage Vf.

REFERENCE SIGNS LIST 10 light emitting element 11 n-type semiconductor layer 12 p-type semiconductor layer 13 light emitting layer 14 insulating film 15 conductive film 15A to 15H through-hole 16 substrate 17 protective layer 21 n-side electrode 21a n-side external connection portion 21b n-side extension portion 22 p-side Electrode 22a p-side external connection portion 22b, 22c p-side extension portion

Claims (5)

n-type semiconductor layer,
a p-type semiconductor layer provided in a region excluding a portion of the upper surface of the n-type semiconductor layer;
an n-side electrode having an n-side external connection portion, which is in contact with a portion of the upper surface of the n-type semiconductor layer and surrounded by the p-type semiconductor layer; and an n-side extension portion extending from the n-side external connection portion; A light-transmitting conductive film electrically connected to the p-type semiconductor layer, a p-side external connection portion disposed on the upper surface of the conductive film, and a p-side external connection portion to the n-side external connection portion. A light-emitting element comprising a p-side electrode having a first p-side extension portion extending toward the n-side external connection portion and a second p-side extension portion extending toward both sides of the n-side external connection portion,
The conductive film has a plurality of through-holes,
The plurality of through-holes, in a plan view, each have an elongated shape provided along a first direction parallel to a shortest line connecting the tip of the first p-side extending portion and the n-side external connection portion. and a first through hole having an elongated shape provided along a second direction different from the first direction and in which the n-side extending portion and the first p-side extending portion face each other. 2 through-holes and a third through-hole having an elongated shape arranged outside the second p-side extending portion. 2. The light emitting device according to claim 1, wherein the conductive film has an aperture ratio of the through holes of 30% or less. 3. The light emitting device according to claim 1, wherein the second direction is a direction crossing the first direction at 90[deg.]±5[deg.] in plan view. The light emitting device according to any one of claims 1 to 3, wherein the conductive film further has a curved through-hole in plan view. The light-emitting device according to any one of claims 1 to 4, wherein the first through-hole and the second through-hole have a maximum size of 10 µm or less.

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