JP7208913B2 - Copper sulfate plating solution and copper sulfate plating method using the same - Google Patents
Copper sulfate plating solution and copper sulfate plating method using the same Download PDFInfo
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/38—Electroplating: Baths therefor from solutions of copper
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- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C217/00—Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton
- C07C217/02—Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having etherified hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton
- C07C217/04—Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having etherified hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated
- C07C217/28—Compounds containing amino and etherified hydroxy groups bound to the same carbon skeleton having etherified hydroxy groups and amino groups bound to acyclic carbon atoms of the same carbon skeleton the carbon skeleton being acyclic and saturated having one amino group and at least two singly-bound oxygen atoms, with at least one being part of an etherified hydroxy group, bound to the carbon skeleton, e.g. ethers of polyhydroxy amines
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- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/50—Amines
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/02—Electroplating of selected surface areas
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D7/00—Electroplating characterised by the article coated
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/18—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material
- H05K3/188—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using precipitation techniques to apply the conductive material by direct electroplating
Description
本発明は、特定の化合物を含有する硫酸銅めっき液およびこれを用いた硫酸銅めっき方法に関する。 The present invention relates to a copper sulfate plating solution containing a specific compound and a copper sulfate plating method using the same.
近年、電子機器の小型化が進み、微細・多様な配線デザインをもつプリント配線板が求められている。通常、レベラーとして使用されるアミン含有の化合物はめっきを抑制する成分として知られている(特許文献1~5)。
In recent years, electronic devices have become more compact, and printed wiring boards with fine and diverse wiring designs are in demand. An amine-containing compound that is usually used as a leveler is known as a component that suppresses plating (
しかしながら、多様な配線幅を均一に形成しかつビアを充填するためには、それぞれの配線幅、ビアの周辺および内部に対してそれぞれ異なった抑制作用を持たせる必要がある。例えば、ビア周辺は強い抑制力を示して、内部に抑制効果を示さなければビア内にめっきが優先的に析出して充填がなされる。一方、配線は、幅が太い箇所および孤立した箇所に電流が集中してしまうため、配線幅が太い順および配線の粗密順に抑制力を示せば、均一にめっきされる。 However, in order to uniformly form various wiring widths and fill vias, it is necessary to provide different suppression effects to each wiring width, peripheries and interiors of vias. For example, the periphery of the via exhibits a strong suppressive force, and if the suppressive effect is not exhibited inside the via, the plating preferentially deposits and fills the inside of the via. On the other hand, since the current concentrates in the wide portion and the isolated portion of the wiring, if the suppressing force is shown in the order of the wiring width and the density of the wiring, the plating will be uniform.
そのため、従来のアミン系レベラーでは上記の抑制箇所の区別とその箇所に適する抑制力を制御することが非常に困難であり、ビアの充填が達成されても配線の均一性がとれなかったり、配線形状に異常をきたしたり、逆に配線の均一性が達成されてもビアの充填が不十分となった。 For this reason, it is extremely difficult for conventional amine-based levelers to distinguish between the above suppression points and to control the suppression force suitable for that point. Abnormalities in shape were caused, and conversely, filling of vias became insufficient even when wiring uniformity was achieved.
本発明の課題は、多様なデザインの配線を均一な厚みで形成し、ビアを充填することである。 An object of the present invention is to form wiring of various designs with a uniform thickness and to fill vias.
本発明者らは、上記課題を解決するために鋭意研究した結果、後記する式を満たす特定の化合物を利用することにより、上記課題を解決できることを見出し、本発明を完成させた。 As a result of intensive research to solve the above problems, the present inventors have found that the above problems can be solved by using a specific compound that satisfies the formulas described below, and have completed the present invention.
すなわち、本発明は少なくとも窒素原子、水素原子、炭素原子を含む化合物を含有する硫酸銅めっき液であって、
前記化合物が、全体あるいは繰り返し単位の水素原子を除いた分子式中、下記式(1)
The compound has the following formula (1) in the molecular formula excluding hydrogen atoms in the whole or repeating units
また、本発明は少なくとも窒素原子、水素原子、炭素原子を含む化合物であって、
前記化合物が、全体あるいは繰り返し単位の水素原子を除いた分子式中、下記式(1)
The compound has the following formula (1) in the molecular formula excluding hydrogen atoms in the whole or repeating units
更に、本発明は上記化合物を含有する硫酸銅めっき液用添加剤である。 Further, the present invention is an additive for a copper sulfate plating solution containing the above compound.
また更に、本発明はビアを有する被めっき物を、上記硫酸銅めっき液で処理することを特徴とする被めっき物のビアの充填方法である。 Further, the present invention is a method for filling vias in an object to be plated, characterized in that the object to be plated having vias is treated with the copper sulfate plating solution.
また更に、本発明は回路パターン有する被めっき物を、上記硫酸銅めっき液で処理することを特徴とする被めっき物の回路パターンの形成方法である。 Further, the present invention is a method for forming a circuit pattern on an object to be plated, characterized by treating the object to be plated having a circuit pattern with the copper sulfate plating solution.
本発明によれば多様なデザインの配線を均一な厚みで形成し、回路パターンの形成や、ビアを充填することができる。 According to the present invention, it is possible to form wirings of various designs with a uniform thickness, form circuit patterns, and fill vias.
本発明の硫酸銅めっき液(以下、「本発明めっき液」という)に含有される化合物は、少なくとも窒素原子、水素原子、炭素原子を含む化合物であって、全体あるいは繰り返し単位の水素原子を除いた分子式中、下記式(1)
本発明化合物は、例えば、少なくとも窒素原子、水素原子、炭素原子を含む化合物であって、全体あるいは繰り返し単位の水素原子を除いた分子式中、上記要件を満たすものを適宜選択すればよい。このような化合物としては、例えば、アミン化合物とカルボン酸化合物の重合物、ビニル化合物あるいはアリルアミン化合物と、ビニル化合物あるいはアリル化合物との重合物、アミン化合物とエポキシ化合物の重合物、前記重合物に対して更にアルキル基あるいはアルケニル基、アルキニル基、アリール基を付加した付加物等が挙げられる。 The compound of the present invention is, for example, a compound containing at least a nitrogen atom, a hydrogen atom, and a carbon atom, and from among the molecular formulas excluding hydrogen atoms in the whole or repeating units, those satisfying the above requirements may be appropriately selected. Such compounds include, for example, a polymer of an amine compound and a carboxylic acid compound, a polymer of a vinyl compound or an allylamine compound with a vinyl compound or an allyl compound, a polymer of an amine compound and an epoxy compound, and Furthermore, adducts obtained by adding an alkyl group, an alkenyl group, an alkynyl group, or an aryl group are also included.
これら化合物の中でも、アミン化合物とエポキシ化合物の重合物が好ましい。このようなアミン化合物とエポキシ化合物の重合物は、例えば、一般式(i)で示されるアミン化合物と、一般式(ii)で示されるエポキシ化合物を重合させ、相対分子量を、例えば、文献(灰差雅夫著、「現代物理学講座13高分子」)記載の公知の方法で制御することにより得ることができる。 Among these compounds, a polymer of an amine compound and an epoxy compound is preferred. Such a polymer of an amine compound and an epoxy compound can be obtained, for example, by polymerizing an amine compound represented by the general formula (i) and an epoxy compound represented by the general formula (ii), and determining the relative molecular weight, for example, in the literature (Ash It can be obtained by controlling by a known method described in "Kendai Physics Koza 13 Macromolecules" written by Masao Sasa.
式(i)中、Xは直鎖あるいは環状アルキル、アルケニル、アルキニル、あるいはアルキルエーテル、あるいは芳香族炭化水素を示し、前記Xはそれぞれアミノ基あるいは-NR3R4で示される置換アミノ基、ニトロ基、ヒドロキシ基、スルホ基、ニトリル基を持っていても良く、R1、R2、R3、R4はそれぞれ独立して水素、炭素数1~9のアルキル基、アルケニル、アルキニル、あるいはアルキルエーテル、あるいは芳香族炭化水素で、それぞれニトロ基、ヒドロキシ基、スルホ基、ニトリル基等を持っていても良い。前記アルキルエーテルとしては、アルキレンオキサイド、ポリアルキレンオキサイド等が挙げられる。前記芳香族炭化水素としては、フェニル、ベンジル等が挙げられる。In formula (i), X represents a linear or cyclic alkyl, alkenyl, alkynyl, alkyl ether, or aromatic hydrocarbon, and said X is an amino group, a substituted amino group represented by —NR 3 R 4 , nitro group, hydroxy group, sulfo group and nitrile group, and R 1 , R 2 , R 3 and R 4 are each independently hydrogen, alkyl group having 1 to 9 carbon atoms, alkenyl, alkynyl or alkyl Ethers or aromatic hydrocarbons, each of which may have a nitro group, hydroxy group, sulfo group, nitrile group, or the like. Examples of the alkyl ethers include alkylene oxides and polyalkylene oxides. Examples of the aromatic hydrocarbon include phenyl and benzyl.
式(ii)中、Yは直鎖あるいは環状アルキル、アルケニル、アルキニル、あるいはアルキルエーテル、あるいは芳香族炭化水素、あるいはグリセリル、あるいはポリグリセリルを示し、前記Yはそれぞれグリシジル基、ニトロ基、ヒドロキシ基、スルホ基、ニトリル基を持っていても良い。前記アルキルエーテルとしては、アルキレンオキサイド、ポリアルキレンオキサイド等が挙げられる。前記芳香族炭化水素としては、フェニル、ビスフェノールA等が挙げられる。 In formula (ii), Y represents a linear or cyclic alkyl, alkenyl, alkynyl, alkyl ether, aromatic hydrocarbon, glyceryl, or polyglyceryl, and Y represents a glycidyl group, a nitro group, a hydroxy group, a sulfo may have a group or a nitrile group. Examples of the alkyl ethers include alkylene oxides and polyalkylene oxides. Examples of the aromatic hydrocarbons include phenyl, bisphenol A, and the like.
上記アミン化合物とエポキシ化合物の重合物としては、例えば、一般式(iii)で示されるアミン化合物と、一般式(iv)で示されるエポキシ化合物の重合物がより好ましい。 As the polymer of the amine compound and the epoxy compound, for example, a polymer of the amine compound represented by the general formula (iii) and the epoxy compound represented by the general formula (iv) is more preferable.
式(iii)の中でもAが炭素数1~3のアルキル基でBがヒドロキシ基、R5、R6が炭素数1~3のアルキル基および水素で、更に、これらはヒドロキシ基を1または複数個持っていてもよいもの、あるいはAが炭素数1~6のアルキル基でBがNR7R8で、R5、R6、R7、R8が炭素数1~3のアルキル基ものが好ましい。In the formula (iii), A is an alkyl group having 1 to 3 carbon atoms, B is a hydroxy group, R 5 and R 6 are an alkyl group having 1 to 3 carbon atoms and hydrogen, and furthermore, they each contain one or more hydroxy groups. or A is an alkyl group having 1 to 6 carbon atoms, B is NR 7 R 8 and R 5 , R 6 , R 7 and R 8 are alkyl groups having 1 to 3 carbon atoms. preferable.
式(iv)の中でも、Zが炭素数2~6の直鎖アルキルでmは1~9のもの、あるいは、Zが炭素数2~4の分岐アルキルでmは1~3のもの、更に、これらはグリシジル基および/またはヒドロキシ基が1または複数個持っていてもよいものが好ましい。 Among the formula (iv), Z is a linear alkyl having 2 to 6 carbon atoms and m is 1 to 9, or Z is a branched alkyl having 2 to 4 carbon atoms and m is 1 to 3, Preferably, these may have one or more glycidyl groups and/or hydroxy groups.
より具体的に、本発明化合物となるものとしては、以下のものが挙げられる(上から順に実施例1~8で得られる重合物に該当)。 More specifically, the compounds of the present invention include the following (corresponding to the polymers obtained in Examples 1 to 8 in order from the top).
本発明めっき液における本発明化合物の含有量は特に限定されないが、例えば、1ppb以上、好ましくは1ppb~100ppmである。なお、本発明化合物は、めっき液においてレベラーの働きをするものである。 Although the content of the compound of the present invention in the plating solution of the present invention is not particularly limited, it is, for example, 1 ppb or more, preferably 1 ppb to 100 ppm. The compound of the present invention functions as a leveler in the plating solution.
本発明めっき液には、従来公知の硫酸銅めっき液に含有させる、硫酸、銅、塩素等を含有させればよい。本発明めっき液における硫酸の含有量は特に限定されないが、例えば、硫酸は30g/L以上、好ましくは50~200g/Lである。 The plating solution of the present invention may contain sulfuric acid, copper, chlorine, etc., which are contained in conventionally known copper sulfate plating solutions. The content of sulfuric acid in the plating solution of the present invention is not particularly limited, but is, for example, 30 g/L or more, preferably 50 to 200 g/L.
本発明めっき液には、更にブライトナーを含有させることが好ましい。ブライトナーの種類は特に限定されないが、例えば、スルホアルキルスルホン酸類またはその塩、チオ尿素など硫黄系化合物を1種または2種以上含有させる。また、本発明めっき液におけるブライトナーの含有量は特に限定されないが、例えば、0.1mg/L以上、1mg/L~100mg/Lが好ましい。 The plating solution of the present invention preferably further contains a brightener. Although the type of brightener is not particularly limited, it contains, for example, one or more sulfur compounds such as sulfoalkylsulfonic acids or salts thereof and thiourea. The content of the brightener in the plating solution of the present invention is not particularly limited, but is preferably 0.1 mg/L or more, preferably 1 mg/L to 100 mg/L.
本発明めっき液には、更に界面活性剤等のキャリアーを含有させることが好ましい。界面活性剤の種類は特に限定されないが、例えば、ポリエチレングリコール、ポリプロピレングリコール等のポリアルキレングリコールやアルキルあるいはアルケニル、アルキニル、フェニルアルコール、グリセリン、ポリグリセリンのアルキレンオキシド重合物等が挙げられる。また、本発明めっき液におけるキャリアーの含有量は特に限定されないが、例えば、1mg/L以上、100mg/L~1000mg/Lが好ましい。 The plating solution of the present invention preferably further contains a carrier such as a surfactant. Although the type of surfactant is not particularly limited, examples thereof include polyalkylene glycols such as polyethylene glycol and polypropylene glycol, alkyl or alkenyl, alkynyl, phenyl alcohol, glycerin, and alkylene oxide polymers of polyglycerin. The content of the carrier in the plating solution of the present invention is not particularly limited, but is preferably 1 mg/L or more, preferably 100 mg/L to 1000 mg/L.
本発明めっき液には、本発明の効果を損なわない限り、更に硫酸鉄等の銅以外の金属塩やカテコール等の酸化防止剤や本発明化合物以外のレベラー等を含有させてもよい。 The plating solution of the present invention may further contain metal salts other than copper such as iron sulfate, antioxidants such as catechol, and levelers other than the compounds of the present invention, as long as the effects of the present invention are not impaired.
本発明めっき液は、上記成分を混合して調製してもよいが、本発明化合物を含有する硫酸銅めっき液用添加剤を調製し、それを別途調製した硫酸銅めっき液に添加して調製してもよい。なお、硫酸銅めっき液用添加剤には、必要により、ブライトナー、キャリアー等を含有させてもよい。 Although the plating solution of the present invention may be prepared by mixing the above components, an additive for a copper sulfate plating solution containing the compound of the present invention is prepared and added to a separately prepared copper sulfate plating solution. You may The additives for the copper sulfate plating solution may contain brighteners, carriers, etc., if necessary.
本発明めっき液は、従来公知の方法に従って、硫酸銅めっきをすることができる。具体的には、被めっき物を本発明めっき液で処理する方法(以下、「本発明めっき方法」という)で被めっき物へ硫酸銅めっきをすることができる。 The plating solution of the present invention can be used for copper sulfate plating according to a conventionally known method. Specifically, the object to be plated can be plated with copper sulfate by a method of treating the object to be plated with the plating solution of the present invention (hereinafter referred to as "the plating method of the present invention").
本発明めっき方法でめっきできる被めっき物は、特に限定されないが、例えば、樹脂製等の基板に金属等の導電層を形成し、回路をパターニングしたプリント配線板や、シリコンウエハ等の半導体基板等が挙げられる。これらの被めっき物の中でもビアおよび/または回路パターンを有するものが好ましい。 Objects to be plated that can be plated by the plating method of the present invention are not particularly limited, but for example, a printed wiring board in which a conductive layer such as metal is formed on a substrate made of resin, etc., and a circuit is patterned, a semiconductor substrate such as a silicon wafer, etc. is mentioned. Among these objects to be plated, those having vias and/or circuit patterns are preferred.
本発明めっき方法では、上記したように、被めっき物に有る回路パターンの形成や、ビアを充填するのに好ましい。具体的にビアを充填するには、特に限定されないが1.5A/dm2相当の電流密度で45分程度、液温25℃程度でめっきを行えばよい。更にめっきの際はエアレーション、ポンプ循環、パドル攪拌等による液攪拌を行うことが好ましい。As described above, the plating method of the present invention is preferable for forming a circuit pattern on an object to be plated and for filling vias. Specifically, to fill the vias, plating may be performed at a current density equivalent to 1.5 A/dm 2 for about 45 minutes at a solution temperature of about 25° C., although there is no particular limitation. Furthermore, during plating, it is preferable to agitate the solution by aeration, pump circulation, paddle agitation, or the like.
本発明めっき方法で多様なデザインの配線を均一な厚みで形成し、回路パターンの形成や、ビアを充填することができる。 By the plating method of the present invention, it is possible to form wiring of various designs with a uniform thickness, form circuit patterns, and fill vias.
以下、本発明を実施例を挙げて詳細に説明するが、本発明はこれら実施例に何ら限定されるものではない。なお、以下の実施例において、相対分子量はポリエチレングリコールを標準の校正試料としてTSKgel G3000PWXL-CP(東ソー株式会社製)カラムを用いたゲル浸透クロマトグラフィー(GPC)で測定される値である。更に、元素分析値はN、C、Hについて酸素循環燃焼・TCD検出方式、Oについて不活性ガス中インパルス加熱・融解―NDIR検出方式、Sについて酸素フラスコ燃焼/イオンクロマトグラフ法にて測定される値である。 EXAMPLES The present invention will be described in detail below with reference to Examples, but the present invention is not limited to these Examples. In the following examples, relative molecular weights are values measured by gel permeation chromatography (GPC) using a TSKgel G3000PWXL-CP (manufactured by Tosoh Corporation) column using polyethylene glycol as a standard calibration sample. Further, the elemental analysis values are measured by the oxygen circulation combustion/TCD detection method for N, C, and H, the impulse heating/melting in inert gas-NDIR detection method for O, and the oxygen flask combustion/ion chromatography method for S. value.
実 施 例 1
本発明化合物の調製(1):
以下の表2に記載のアミン化合物とエポキシ化合物を表2に記載の当量で、10wt%の水溶液として5℃で0.5時間、40度で3時間反応させてアミン化合物とエポキシ化合物の重合物を得た。得られた重合物のN率と相対分子量(Mw)も表2に示した。元素分析値はC:50.8%、N:2.7%、H:9.0%、O:33.3%、S:2.9%と分析され、S原子は硫酸イオンあるいは硫酸水素イオン由来であるためそれを減算した水素原子を除く組成式はC(4.23)N(0.193)O(1.74)となりN率は3.13と算出できた。この実測値から算出されたN率は計算値と誤差が少なく、実用上は計算値を用いても問題ないことがわかった。Example 1
Preparation of compounds of the present invention (1):
The amine compound and the epoxy compound shown in Table 2 below are reacted as an aqueous solution of 10 wt% at the equivalent weight shown in Table 2 at 5°C for 0.5 hours and at 40°C for 3 hours to obtain a polymer of the amine compound and the epoxy compound. got Table 2 also shows the N ratio and relative molecular weight (Mw) of the resulting polymer. The elemental analysis values are C: 50.8%, N: 2.7%, H: 9.0%, O: 33.3%, S: 2.9%, and S atoms are sulfate ions or hydrogen sulfate. Since it is derived from ions, the compositional formula excluding hydrogen atoms from which the hydrogen atoms were subtracted was C(4.23)N(0.193)O(1.74), and the N ratio could be calculated as 3.13. It was found that the N ratio calculated from this measured value has little error with the calculated value, and there is no problem in using the calculated value in practice.
実 施 例 2
本発明化合物の調製(2):
以下の表3に記載のアミン化合物とエポキシ化合物を表3に記載の当量で10wt%の水溶液として5℃で0.5時間、40℃で3時間反応させてアミン化合物とエポキシ化合物の重合物を得た。得られた重合物のN率と相対分子量(Mw)も表3に示した。Example 2
Preparation of compounds of the present invention (2):
The amine compound and epoxy compound shown in Table 3 below are reacted in an aqueous solution having an equivalent weight of 10 wt. Obtained. Table 3 also shows the N ratio and relative molecular weight (Mw) of the resulting polymer.
実 施 例 3
本発明化合物の調製(3):
以下の表4に記載のアミン化合物とエポキシ化合物を表4に記載の当量で10wt%の水溶液として5℃で0.5時間、40℃で3時間反応させてアミン化合物とエポキシ化合物の重合物を得た。得られた重合物のN率と相対分子量(Mw)も表4に示した。Example 3
Preparation of compounds of the present invention (3):
The amine compound and the epoxy compound shown in Table 4 below are reacted in an aqueous solution of 10 wt % equivalent weight shown in Table 4 at 5° C. for 0.5 hours and at 40° C. for 3 hours to obtain a polymer of the amine compound and the epoxy compound. Obtained. Table 4 also shows the N ratio and relative molecular weight (Mw) of the resulting polymer.
実 施 例 4
本発明化合物の調製(4):
以下の表5に記載のアミン化合物とエポキシ化合物を表5に記載の当量で10wt%の水溶液として5℃で0.5時間、40℃で3時間反応させてアミン化合物とエポキシ化合物の重合物を得た。得られた重合物のN率と相対分子量(Mw)も表5に示した。Example 4
Preparation of compounds of the invention (4):
The amine compound and the epoxy compound shown in Table 5 below are reacted in an aqueous solution of 10 wt % equivalent weight shown in Table 5 at 5° C. for 0.5 hours and at 40° C. for 3 hours to obtain a polymer of the amine compound and the epoxy compound. Obtained. Table 5 also shows the N ratio and relative molecular weight (Mw) of the resulting polymer.
実 施 例 5
本発明化合物の調製(5):
以下の表6に記載のアミン化合物とエポキシ化合物を表6に記載の当量で10wt%の水溶液として5℃で0.5時間、35℃で3時間反応させてアミン化合物とエポキシ化合物の重合物を得た。得られた重合物のN率と相対分子量(Mw)も表6に示した。元素分析値はC:45.3%、N:2.7%、H:7.4%、O:36.6%、S:2.5%と分析され、S原子は硫酸イオンあるいは硫酸水素イオン由来であるため減算した水素原子を除く組成式はC(3.77)N(0.193)O(1.98)となりN率は3.25と算出できた。Example 5
Preparation of compounds of the invention (5):
The amine compound and epoxy compound shown in Table 6 below are reacted in an aqueous solution having an equivalent weight of 10 wt. Obtained. Table 6 also shows the N ratio and relative molecular weight (Mw) of the resulting polymer. The elemental analysis values are C: 45.3%, N: 2.7%, H: 7.4%, O: 36.6%, S: 2.5%, and S atoms are sulfate ions or hydrogen sulfate. Since it is derived from ions, the compositional formula excluding the subtracted hydrogen atoms was C(3.77)N(0.193)O(1.98), and the N ratio could be calculated as 3.25.
実 施 例 6
本発明化合物の調製(6):
以下の表7に記載のアミン化合物とエポキシ化合物を表7に記載の当量で10wt%の水溶液として5℃で0.5時間、40℃で3時間反応させてアミン化合物とエポキシ化合物の重合物を得た。得られた重合物のN率と相対分子量(Mw)も表7に示した。Example 6
Preparation of compounds of the invention (6):
The amine compound and epoxy compound shown in Table 7 below are reacted in an aqueous solution having an equivalent weight of 10 wt. Obtained. Table 7 also shows the N ratio and relative molecular weight (Mw) of the resulting polymer.
実 施 例 7
本発明化合物の調製(7):
以下の表8に記載のアミン化合物とエポキシ化合物を表8に記載の当量で10wt%の水溶液として5℃で0.5時間、40℃で3時間反応させてアミン化合物とエポキシ化合物の重合物を得た。得られた重合物のN率と相対分子量(Mw)も表8に示した。Example 7
Preparation of compounds of the invention (7):
The amine compound and the epoxy compound shown in Table 8 below are reacted in an aqueous solution of 10 wt% equivalent weight shown in Table 8 at 5°C for 0.5 hours and at 40°C for 3 hours to obtain a polymer of the amine compound and the epoxy compound. Obtained. Table 8 also shows the N ratio and relative molecular weight (Mw) of the resulting polymer.
比 較 例 1
比較化合物の調製(1):
以下の表9に記載のアミン化合物とエポキシ化合物を表9に記載の1/2当量で10wt%の水溶液として25℃で0.5時間、97℃で3時間で反応させた。その後アミン化合物とエポキシ化合物の残り1/2当量を加えて105℃で30分反応させアミン化合物とエポキシ化合物の重合物を得た。得られた重合物のN率と相対分子量(Mw)も表9に示した。Comparative example 1
Preparation of Comparative Compound (1):
The amine compound and the epoxy compound shown in Table 9 below were reacted at 25° C. for 0.5 hour and at 97° C. for 3 hours as a 10 wt % aqueous solution at 1/2 equivalent weight shown in Table 9. After that, the remaining 1/2 equivalent of the amine compound and the epoxy compound was added and reacted at 105° C. for 30 minutes to obtain a polymer of the amine compound and the epoxy compound. Table 9 also shows the N ratio and relative molecular weight (Mw) of the resulting polymer.
比 較 例 2
比較化合物の調製(2):
以下の表10に記載のアミン化合物とエポキシ化合物を表10に記載の当量で10wt%の水溶液として5℃で0.5時間、98℃で3時間反応させてアミン化合物とエポキシ化合物の重合物を得た。得られた重合物のN率と相対分子量(Mw)も表10に示した。Comparative example 2
Preparation of Comparative Compound (2):
The amine compound and epoxy compound shown in Table 10 below are reacted in an aqueous solution of 10 wt % equivalent weight shown in Table 10 at 5° C. for 0.5 hours and at 98° C. for 3 hours to obtain a polymer of the amine compound and the epoxy compound. Obtained. Table 10 also shows the N ratio and relative molecular weight (Mw) of the resulting polymer.
比 較 例 3
比較化合物の調製(3):
以下の表11に記載のアミン化合物とエポキシ化合物を表11に記載の1/2当量で10wt%の水溶液として25℃で0.5時間、97℃で3時間で反応させた。その後アミン化合物とエポキシ化合物の残り1/2当量を加えて105℃で30分反応させアミン化合物とエポキシ化合物の重合物を得た。得られた重合物のN率と相対分子量(Mw)も表11に示した。Comparative example 3
Preparation of Comparative Compound (3):
The amine compound and epoxy compound listed in Table 11 below were reacted at 25° C. for 0.5 hour and at 97° C. for 3 hours as a 10 wt % aqueous solution at 1/2 equivalents listed in Table 11. After that, the remaining 1/2 equivalent of the amine compound and the epoxy compound was added and reacted at 105° C. for 30 minutes to obtain a polymer of the amine compound and the epoxy compound. Table 11 also shows the N ratio and relative molecular weight (Mw) of the resulting polymer.
比 較 例 4
比較化合物の調製(4):
以下の表12に記載のアミン化合物とエポキシ化合物を表12に記載の当量で10wt%の水溶液として5℃で0.5時間、40℃で3時間反応させてアミン化合物とエポキシ化合物の重合物を得た。得られた重合物のN率と相対分子量(Mw)も表12に示した。Comparative example 4
Preparation of Comparative Compound (4):
The amine compound and the epoxy compound shown in Table 12 below are reacted in an aqueous solution of 10 wt% equivalent weight shown in Table 12 at 5°C for 0.5 hours and at 40°C for 3 hours to obtain a polymer of the amine compound and the epoxy compound. Obtained. Table 12 also shows the N ratio and relative molecular weight (Mw) of the resulting polymer.
比 較 例 5
比較化合物の調製(5):
以下の表13に記載したニットーボーメディカル社製のポリアリルアミン化合物(PAS-24)を使用した。N率と相対分子量(Mw)も表13に示した。Comparative example 5
Preparation of Comparative Compound (5):
A polyallylamine compound (PAS-24) manufactured by Nittobo Medical Co., Ltd. described in Table 13 below was used. The N ratio and relative molecular weight (Mw) are also shown in Table 13.
比 較 例 6
比較化合物の調製(6):
以下の表14に記載のアミン化合物とエポキシ化合物を表14に記載の当量で10wt%の水溶液として5℃で0.5時間、40℃で3時間反応させてアミン化合物とエポキシ化合物の重合物を得た。得られた重合物のN率と相対分子量(Mw)も表14に示した。Comparative example 6
Preparation of Comparative Compound (6):
The amine compound and the epoxy compound shown in Table 14 below are reacted as an aqueous solution of 10 wt% in equivalent weight shown in Table 14 at 5°C for 0.5 hours and at 40°C for 3 hours to obtain a polymer of the amine compound and the epoxy compound. Obtained. Table 14 also shows the N ratio and relative molecular weight (Mw) of the obtained polymer.
比 較 例 7
比較化合物の調製(7):
以下の表15に記載のアミン化合物とエポキシ化合物を表15に記載の当量で10wt%の水溶液として5℃で0.5時間、40℃で3時間反応させてアミン化合物とエポキシ化合物の重合物を得た。得られた重合物のN率と相対分子量(Mw)も表15に示した。Comparative example 7
Preparation of Comparative Compound (7):
The amine compound and the epoxy compound shown in Table 15 below are reacted as an aqueous solution of 10 wt% in equivalent weight shown in Table 15 at 5°C for 0.5 hours and at 40°C for 3 hours to obtain a polymer of the amine compound and the epoxy compound. Obtained. Table 15 also shows the N ratio and relative molecular weight (Mw) of the resulting polymer.
比 較 例 8
比較化合物の調製(8):
以下の表16に記載のアミン化合物とエポキシ化合物を表16に記載の当量で10wt%の水溶液として5℃で0.5時間、25℃で3時間で反応させてアミン化合物とエポキシ化合物の重合物を得た。得られた重合物のN率と相対分子量(Mw)も表16に示した。Comparative example 8
Preparation of Comparative Compound (8):
The amine compound and the epoxy compound shown in Table 16 below are reacted as an aqueous solution of 10 wt% equivalent weight shown in Table 16 at 5°C for 0.5 hours and at 25°C for 3 hours to obtain a polymer of the amine compound and the epoxy compound. got Table 16 also shows the N ratio and relative molecular weight (Mw) of the resulting polymer.
比 較 例 9
比較化合物の調製(9):
以下の表17に記載のアミン化合物とエポキシ化合物を表17に記載の当量で10wt%の水溶液として5℃で0.5時間、25℃で3時間で反応させてアミン化合物とエポキシ化合物の重合物を得た。得られた重合物のN率と相対分子量(Mw)も表17に示した。Comparative example 9
Preparation of Comparative Compound (9):
The amine compound and the epoxy compound shown in Table 17 below are reacted as an aqueous solution of 10 wt% in equivalent weight shown in Table 17 at 5°C for 0.5 hours and at 25°C for 3 hours to obtain a polymer of the amine compound and the epoxy compound. got Table 17 also shows the N ratio and relative molecular weight (Mw) of the resulting polymer.
実 施 例 8
本発明化合物の調製(8):
以下の表18に記載のアミン化合物とエポキシ化合物を表18に記載の当量で、10wt%の水溶液として5℃で0.5時間、40度で3時間で反応させてアミン化合物とエポキシ化合物の重合物を得た。得られた重合物のN率と相対分子量(Mw)も表18に示した。Example 8
Preparation of compounds of the invention (8):
The amine compound and the epoxy compound shown in Table 18 below are reacted in the equivalent amounts shown in Table 18 as a 10 wt% aqueous solution at 5°C for 0.5 hours and at 40°C for 3 hours to polymerize the amine compound and the epoxy compound. got stuff Table 18 also shows the N ratio and relative molecular weight (Mw) of the resulting polymer.
試 験 例 1
めっき試験:
実施例1~8で調製した化合物を5~30mg/Lで、それぞれ表19に記載の組成の硫酸銅めっき液に含有させ、本発明の硫酸銅めっき液を調製した。これらの硫酸銅めっき液に、無電解銅めっきを施した開口径φ60μm、深さ35μmのブラインドビアホールを有する樹脂基板および厚さ25μmのDFRを使用して30/150、15/150、9/150、30/30、15/15、9/9のL/Sを有するパターニング基板を入れ以下の条件で硫酸銅めっきを行った。めっき後の基板についてフィリング性と最大膜厚差を以下のようにして評価した。それらの結果を表20に示した。また、比較として、比較例1~9で調製した化合物を含有させた硫酸銅めっき液を調製し、それらについても同様に硫酸銅めっきを行い評価した。それらの結果を表21に示した。Test example 1
Plating test:
5 to 30 mg/L of the compounds prepared in Examples 1 to 8 were added to copper sulfate plating solutions having compositions shown in Table 19, respectively, to prepare copper sulfate plating solutions of the present invention. In these copper sulfate plating solutions, 30/150, 15/150, 9/150 using a resin substrate having a blind via hole with an opening diameter of φ60 μm and a depth of 35 μm and a DFR with a thickness of 25 μm subjected to electroless copper plating. , 30/30, 15/15, and 9/9, and copper sulfate plating was performed under the following conditions. The substrate after plating was evaluated for filling property and maximum film thickness difference as follows. Those results are shown in Table 20. For comparison, copper sulfate plating solutions containing the compounds prepared in Comparative Examples 1 to 9 were prepared, and the same copper sulfate plating was performed and evaluated. Those results are shown in Table 21.
<硫酸銅めっき液組成>
PEG:ポリエチレングリコール(分子量4000)
PO:グリセリンのポリプロピレングリコール付加物(分子量700)<Copper sulfate plating solution composition>
PO: Polypropylene glycol adduct of glycerin (molecular weight 700)
<硫酸銅めっき条件>
電流密度:1.65A/dm2
時間:45分
浴量:500mL
攪拌:エアレーション 1.5L/min<Copper sulfate plating conditions>
Current density: 1.65A/ dm2
Time: 45 minutes Bath volume: 500 mL
Stirring: Aeration 1.5 L/min
<フィリング性評価基準>
充填したビアホール上方の窪み量(μm)を3次元白色光干渉型顕微鏡を用いて測定した。窪み量が5μm以内を○として、5μm以上を×とした<Filling property evaluation criteria>
The amount of depression (μm) above the filled via hole was measured using a three-dimensional white light interference microscope. The amount of dent was designated as ○ within 5 μm, and × as 5 μm or more.
<最大膜厚差評価基準>
各配線幅の回路高さを3次元白色光干渉型顕微鏡を用いて測定した。最大高さ―最小高さを最大膜厚差として、5μm以内を○、5μm以上を×とした。<Maximum film thickness difference evaluation criteria>
The circuit height of each wiring width was measured using a three-dimensional white light interference microscope. The maximum film thickness difference between the maximum height and the minimum height was defined as the maximum film thickness difference.
上記結果を要約したものを図1に示した。この結果より、本発明化合物は硫酸銅めっき液に含有させることにより、多様なデザインの配線を均一な厚みで形成し、ビアを充填できることが示された。一方、少なくとも窒素原子、水素原子、炭素原子を含む化合物であってもXやMwが本発明化合物の範囲に入らない場合、多様なデザインの配線を均一な厚みで形成できず、ビアを充填できないことも示された A summary of the above results is shown in FIG. From these results, it was shown that by including the compound of the present invention in the copper sulfate plating solution, wiring of various designs can be formed with a uniform thickness and vias can be filled. On the other hand, even if the compound contains at least a nitrogen atom, a hydrogen atom, and a carbon atom, if X and Mw do not fall within the scope of the compound of the present invention, it is not possible to form wiring of various designs with a uniform thickness, and it is impossible to fill vias. was also shown
本発明は、多様なデザインの配線を均一な厚みで形成し、回路パターンの形成やビアを充填することができるため、プリント配線板等の製造に利用できる。
以 上INDUSTRIAL APPLICABILITY The present invention can be used to manufacture printed wiring boards and the like because it is possible to form wiring of various designs with a uniform thickness, form circuit patterns, and fill vias.
that's all
Claims (9)
前記化合物が、全体あるいは繰り返し単位の水素原子を除いた分子式中、下記式(1)
前記化合物がアミン化合物とエポキシ化合物の重合物であり、
前記アミン化合物とエポキシ化合物の重合物が、式(iii)で示されるアミン化合物と、
式(iv)で示されるエポキシ化合物との、
重合物であることを特徴とする硫酸銅めっき液。 A copper sulfate plating solution containing a compound containing at least a nitrogen atom, a hydrogen atom, and a carbon atom,
The compound has the following formula (1) in the molecular formula excluding hydrogen atoms in the whole or repeating units
The compound is a polymer of an amine compound and an epoxy compound,
A polymer of the amine compound and the epoxy compound is an amine compound represented by formula (iii);
with an epoxy compound represented by formula (iv),
A copper sulfate plating solution characterized by being a polymer.
前記化合物が、全体あるいは繰り返し単位の水素原子を除いた分子式中、下記式(1)
前記化合物がアミン化合物とエポキシ化合物の重合物であり、
前記アミン化合物とエポキシ化合物の重合物が、以下の(a)~(h)
(a)
The compound has the following formula (1) in the molecular formula excluding hydrogen atoms in the whole or repeating units
The compound is a polymer of an amine compound and an epoxy compound,
The polymer of the amine compound and the epoxy compound is the following (a) to (h)
(a)
前記化合物が、全体あるいは繰り返し単位の水素原子を除いた分子式中、下記式(1)
前記化合物がアミン化合物とエポキシ化合物の重合物であり、
前記アミン化合物とエポキシ化合物の重合物が、式(iii)で示されるアミン化合物と、
式(iv)で示されるエポキシ化合物との、
重合物であることを特徴とする化合物。 A compound containing at least a nitrogen atom, a hydrogen atom, and a carbon atom,
The compound has the following formula (1) in the molecular formula excluding hydrogen atoms in the whole or repeating units
The compound is a polymer of an amine compound and an epoxy compound,
A polymer of the amine compound and the epoxy compound is an amine compound represented by formula (iii);
with an epoxy compound represented by formula (iv),
A compound characterized by being a polymer.
前記化合物が、全体あるいは繰り返し単位の水素原子を除いた分子式中、下記式(1)
前記化合物がアミン化合物とエポキシ化合物の重合物であり、
前記アミン化合物とエポキシ化合物の重合物が、以下の(a)~(h)
(a)
The compound has the following formula (1) in the molecular formula excluding hydrogen atoms in the whole or repeating units
The compound is a polymer of an amine compound and an epoxy compound,
The polymer of the amine compound and the epoxy compound is the following (a) to (h)
(a)
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JP2012149351A (en) | 2004-07-22 | 2012-08-09 | Rohm & Haas Electronic Materials Llc | Leveler compound |
WO2010132876A1 (en) | 2009-05-15 | 2010-11-18 | Arizona Board Of Regents For And On Behalf Of Arizona State University | Polymers for delivering a substance into a cell |
JP2017002299A (en) | 2009-11-27 | 2017-01-05 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | Composition for metal electroplating comprising leveling agent |
JP2011207878A (en) | 2010-03-15 | 2011-10-20 | Rohm & Haas Electronic Materials Llc | Plating bath and method |
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