JP7171972B2 - light emitting device - Google Patents

Description

The present disclosure relates to light emitting devices.

2. Description of the Related Art Various techniques are known for improving the light emission characteristics of a light emitting device equipped with a light emitting element. Japanese Patent Application Laid-Open No. 2018-120959 describes a light-emitting device in which an LED chip is mounted not only on the first region but also on a peripheral portion whose top surface and side surfaces are covered with a reflective portion. In the light emitting device described in Japanese Patent Application Laid-Open No. 2018-120959, by mounting the LED chip on the peripheral portion in addition to the first region, it is possible to suppress the deterioration of the luminous efficiency due to heat generation of the LED chip, so that the narrow first region achieves high output.

Japanese Patent Application Laid-Open No. 2014-154349 discloses that a light guide plate is provided on top of a plurality of light emitting elements, the side surface of the light guide portion is covered with a reflective surface, and the light introduced from the plurality of light emitting elements to the light guide plate is led to the outside. Lighting fixtures are listed. In the lighting device described in JP-A-2014-154349, out of the light introduced from the light emitting element to the light guide plate arranged above, the light reaching the light exit surface connected to the reflecting surface is led to the outside. Therefore, luminance unevenness and glare can be suppressed.

Japanese Patent Application Laid-Open No. 2014-86405 discloses that a light guide plate is provided on top of light emitting elements arranged in a peripheral portion, side surfaces of the light guide plate are covered with a light reflecting layer, and light emitted from the light emitting elements is directed to the light guide plate side by the light reflecting layer. A lighting device having a reflective configuration is described. In the lighting device described in Japanese Patent Application Laid-Open No. 2014-86405, by improving the amount of light emitted from the peripheral portion, it is possible to provide a lighting device that can be expected to have excellent light utilization efficiency.

In the light-emitting device described in JP-A-2018-120959, since the light-emitting elements are arranged over the entire surface of the first region, there is a risk that the light-emitting elements may be visually recognized as luminance unevenness when emitting light at low luminance. be. In addition, in the light emitting device described in JP-A-2018-120959, since the fluorescent material is arranged over the entire surface of the first region, the first region is visually recognized in the color of the fluorescent material when the light is turned off. may decrease.

In the lighting devices described in JP-A-2014-154349 and JP-A-2014-86405, it is necessary to provide a light guide plate above the light emitting element. The thickness of the device itself must be increased. Moreover, in the lighting device described above, no consideration was given to the color of the fluorescent material of the light-emitting element.

An object of the present disclosure is to provide a light-emitting device that is less likely to cause luminance unevenness.

Another object of the present disclosure is to provide a light-emitting device in which the color of the fluorescent material is not visible from the outside when the light is turned off, and the appearance of the device is less likely to deteriorate.

According to one embodiment of the present light-emitting device, a substrate having a first region and a second region arranged around the first region, a plurality of light-emitting elements mounted on the substrate in the second region, a plurality of a sealing material disposed on the substrate so as to cover the light emitting element; a reflective material disposed on the upper side of the sealing material and on a side opposite to the first region side; and a light guide member arranged in the first region so as to face the region-side side surface.

In the light-emitting device described above, the encapsulant preferably contains a fluorescent material that converts the wavelength of light emitted from the plurality of light-emitting elements and emits light of different wavelengths.

In the light-emitting device described above, it is preferable that the reflector and the light-guiding material do not contain a fluorescent material.

In the light-emitting device described above, the sealing material converts the wavelength of light emitted from the plurality of light-emitting elements and emits light having a second wavelength different from light having a first wavelength emitted from the plurality of light-emitting elements. 1. A first encapsulant containing a fluorescent material, and wavelength-converting light emitted from the plurality of light emitting elements to obtain light of a third wavelength different from the light of the first wavelength emitted from the plurality of light emitting elements. A second encapsulant containing a second fluorescent material to be emitted is preferably included, and each of the first encapsulant and the second encapsulant preferably seals one of the plurality of light emitting elements.

In the above light-emitting device, the plurality of light-emitting elements includes the first group of light-emitting elements arranged close to the outer edge of the light guide member, and the first group of light-emitting elements on the side opposite to the first region side. a second group of light emitting elements disposed, wherein the first encapsulant encapsulates the first group of light emitting elements and the second encapsulant preferably encapsulates the second group of light emitting elements. .

In the light emitting device described above, it is preferable that the first sealing material seals all of the plurality of light emitting elements, and the second sealing material seals only a part of the plurality of light emitting elements.

In the above light-emitting device, the encapsulant further includes a third encapsulant that does not contain a fluorescent material, and the third encapsulant is the first encapsulant, the second encapsulant, or the plurality of light-emitting elements Of these, it is preferable to seal the light emitting elements that are not sealed with the first sealing material and the front second sealing material.

In the light emitting device described above, the encapsulant preferably does not contain a fluorescent material.

In the light-emitting device described above, it is preferable that the plurality of light-emitting elements include a first light-emitting element that emits light of the first wavelength and a second light-emitting element that emits light of a wavelength different from the first wavelength.

In the light emitting device described above, it is preferable that the first light emitting elements and the second light emitting elements are alternately arranged on the substrate.

In the above light-emitting device, the plurality of light-emitting elements are preferably SMD type LED chips that emit light vertically or horizontally with respect to the substrate.

In the above light emitting device, the first region has a circular or polygonal shape, the top surface of the light guide has the same outer shape as the first region, and the plurality of light emitting elements are arranged on the outer edge of the light guide. preferably arranged along.

In the light emitting device described above, it is preferable that the substrate has a rectangular shape, and part of the plurality of light emitting elements are arranged in a line along the longitudinal direction of the substrate.

In the light emitting device described above, some of the plurality of light emitting elements may be arranged in the first region, and the reflector may also be arranged above some of the plurality of light emitting elements arranged in the first region. preferable.

In the light emitting device described above, it is preferable that the height of the light guide member from the surface of the substrate is set so as to gradually decrease from the central portion of the light guide member toward the outer edge thereof.

In the light emitting device described above, the upper surface of the light guide is preferably dimpled.

It is preferable that the above light-emitting device further includes a low refractive index layer disposed above the upper surface of the light guide and having a lower refractive index than the light guide.

In the light emitting device described above, it is preferable that a dot-shaped resin is arranged on the upper surface of the light guide member.

In the light emitting device described above, it is preferable that the reflector is arranged so as to shield the sealing material when the substrate is viewed from above.

In the above light-emitting device, the reflector includes a frame member arranged along the outer edge of the encapsulant and a shielding member arranged above the encapsulant, and the height of the frame member from the substrate surface is , is preferably set to be higher than the height of the light guide from the substrate surface.

In the light emitting device described above, it is preferable that the reflector is a preformed resin member.

It is preferable that the above light-emitting device further includes a diffusion layer disposed above the top surface of the light guide member, containing a diffusion material for diffusing light emitted from the top surface, and not containing a fluorescent material.

In the light emitting device described above, it is preferable that the thickness of the central portion of the diffusion layer is thinner than the thickness of the outer edge portion of the diffusion layer.

In the light emitting device described above, it is preferable that the height of the surface of the diffusion layer from the surface of the substrate is set so as to gradually increase from the central portion of the diffusion layer toward the outer edge thereof.

The above light-emitting device further includes a circuit board having electrodes and openings that are arranged on the substrate and electrically connected to the plurality of light-emitting elements, and the plurality of light-emitting elements are arranged on the substrate inside the openings. is preferably implemented.

In the light emitting device described above, it is preferable that the surface of the substrate is textured in the first region.

In the light-emitting device described above, it is preferable that a protrusion that reflects light emitted from the encapsulant is arranged on the surface of the substrate in the first region.

In the light-emitting device according to the embodiment, it is possible to reduce the possibility of luminance unevenness. Moreover, in the light-emitting device according to the embodiment, the color of the fluorescent material is not visible from the outside when the light is turned off, and the possibility that the aesthetic appearance is deteriorated can be reduced.

1 is a plan view of a light emitting device according to a first embodiment; FIG. FIG. 1B is a cross-sectional view along line AA in FIG. 1A; 1B is a diagram showing a light emitting state of the light emitting device shown in FIG. 1A; FIG. FIG. 2 is a diagram (part 1) showing a method for manufacturing the light emitting device shown in FIG. 1; FIG. 3B is a cross-sectional view along line AA in FIG. 3A; FIG. 2 is a diagram (part 2) showing a method of manufacturing the light emitting device shown in FIG. 1; FIG. 4B is a cross-sectional view along line AA in FIG. 4A; 3 is a diagram (part 3) showing a method for manufacturing the light emitting device shown in FIG. 1; FIG. FIG. 5B is a cross-sectional view along line AA in FIG. 5A; 4 is a diagram (part 4) showing a method for manufacturing the light emitting device shown in FIG. 1; FIG. FIG. 6B is a cross-sectional view along line AA in FIG. 6A; FIG. 5 is a diagram (No. 5) showing a method for manufacturing the light emitting device shown in FIG. 1; FIG. 7B is a cross-sectional view along line AA in FIG. 7A; It is a top view of the light-emitting device which concerns on 2nd Embodiment. FIG. 8B is a cross-sectional view along line BB in FIG. 8A; It is a top view of the light-emitting device which concerns on 3rd Embodiment. FIG. 9B is a cross-sectional view along line CC in FIG. 9A; It is a top view of the light-emitting device which concerns on 4th Embodiment. FIG. 10B is a cross-sectional view along line DD in FIG. 10A; FIG. 11 is a plan view of a light emitting device according to a fifth embodiment; FIG. 11B is a cross-sectional view along line EE in FIG. 11A; FIG. 4 is a cross-sectional view of a light emitting device according to a first modified example of the first embodiment; FIG. 11 is a cross-sectional view of a light emitting device according to a second modified example of the first embodiment; FIG. 11 is a cross-sectional view of a light emitting device according to a third modified example of the first embodiment; FIG. 11 is a cross-sectional view of a light emitting device according to a fourth modified example of the first embodiment; FIG. 11 is a cross-sectional view of a light emitting device according to a fifth modified example of the first embodiment; FIG. 11 is a plan view of a light emitting device according to a sixth modification of the first embodiment; FIG. 12 is a plan view of a light emitting device according to a seventh modification of the first embodiment; FIG. 20 is a plan view of a light-emitting device according to an eighth modification of the first embodiment; FIG. 11 is a plan view of a light emitting device according to a sixth embodiment; FIG. 17B is a cross-sectional view along line AA in FIG. 17A; 17B is a diagram showing a light emitting state of the light emitting device shown in FIG. 17A; FIG. FIG. 18 is a diagram (part 1) showing a method for manufacturing the light emitting device shown in FIG. 17; FIG. 19B is a cross-sectional view along line AA in FIG. 19A; FIG. 18 is a diagram (part 2) showing a method of manufacturing the light emitting device shown in FIG. 17; FIG. 20B is a cross-sectional view along line AA in FIG. 20A; FIG. 18 is a diagram (part 3) showing a method of manufacturing the light emitting device shown in FIG. 17; FIG. 21B is a cross-sectional view along line AA in FIG. 21A; FIG. 18 is a diagram (part 4) showing a method for manufacturing the light emitting device shown in FIG. 17; FIG. 22B is a cross-sectional view along line AA in FIG. 22A; FIG. 18 is a diagram (No. 5) showing a method of manufacturing the light emitting device shown in FIG. 17; FIG. 23B is a cross-sectional view along line AA in FIG. 23A; FIG. 18 is a diagram (No. 6) showing a method for manufacturing the light emitting device shown in FIG. 17; FIG. 24B is a cross-sectional view along line AA in FIG. 24A; FIG. 11 is a plan view of a light emitting device according to a seventh embodiment; FIG. 25B is a cross-sectional view along line BB in FIG. 25A; FIG. 26 is a diagram (part 1) showing a method of manufacturing the light emitting device shown in FIG. 25; FIG. 26B is a cross-sectional view along line BB in FIG. 26A; FIG. 26 is a diagram (part 2) showing a method of manufacturing the light emitting device shown in FIG. 25; FIG. 27B is a cross-sectional view along line BB in FIG. 27A; FIG. 21 is a plan view of a light emitting device according to an eighth embodiment; FIG. 28B is a cross-sectional view along line CC in FIG. 28A; FIG. 21 is a plan view of a light emitting device according to a ninth embodiment; FIG. 29B is a cross-sectional view along line DD in FIG. 29A; FIG. 20 is a plan view of a light emitting device according to a tenth embodiment; FIG. 30B is a cross-sectional view along line EE in FIG. 30A; FIG. 20 is a plan view of a light emitting device according to an eleventh embodiment; FIG. 31B is a cross-sectional view along line FF in FIG. 31A; FIG. 21 is a plan view of a light emitting device according to a twelfth embodiment; FIG. 32B is a cross-sectional view along line GG in FIG. 32A; FIG. 21 is a plan view of a light emitting device according to a thirteenth embodiment; FIG. 33B is a cross-sectional view along line HH in FIG. 33A; FIG. 20 is a plan view of a light emitting device according to a fourteenth embodiment; FIG. 34B is a cross-sectional view along line II in FIG. 34A; FIG. 21 is a plan view of a light emitting device according to a fifteenth embodiment; FIG. 35B is a cross-sectional view along line AA in FIG. 35A; FIG. 21 is a plan view of a light emitting device according to a sixteenth embodiment; FIG. 36B is a cross-sectional view along line BB in FIG. 36A; FIG. 21 is a plan view of a light emitting device according to a seventeenth embodiment; FIG. 37B is a cross-sectional view along line CC in FIG. 37A; FIG. 20 is a plan view of a light emitting device according to an eighteenth embodiment; FIG. 38B is a cross-sectional view along line DD in FIG. 38A; FIG. 20 is a plan view of a light emitting device according to a nineteenth embodiment; FIG. 39B is a cross-sectional view along line CC in FIG. 39A; 1 is a plan view of an example of a surface emitting SMD; FIG. 40B is a right side view of the surface emitting SMD shown in FIG. 40A; FIG. 40B is a back view of the surface emitting SMD shown in FIG. 40A. FIG. 1 is a plan view of an example of a side-emitting SMD; FIG. 41B is a right side view of the side emitting SMD shown in FIG. 41A. FIG. 41B is a back view of the side emitting SMD shown in FIG. 41A. FIG. It is a figure which shows an example of the illuminating device applicable to the light-emitting device which concerns on embodiment. It is a figure which shows the example which applied the light-emitting device which concerns on a comparative example to the illuminating device. It is a figure which shows the example which adapted the light-emitting device which concerns on embodiment to the illuminating device.

A preferred embodiment of the light emitting device will be described below with reference to the drawings. However, the technical scope of the present disclosure is not limited to those embodiments, but extends to the invention described in the claims and equivalents thereof.

In the following description, "LED (Light Emitting Diode) chip" means a semiconductor element formed by growing a semiconductor such as an InGaN-based compound, an InGaN-based compound, and a GaAsP-based compound as a light-emitting layer on a substrate. Say. An LED chip emits light of a predetermined emission wavelength when a predetermined voltage is applied between an anode and a cathode arranged on the upper surface, the lower surface, or the upper surface and the lower surface. Semiconductor structures include homostructures such as MIS junctions, PI junctions, and PN junctions, heterostructures, double heterostructures, and the like. Various emission wavelengths can be selected depending on the material of the LED chip, the growth temperature, and the like. The wavelength of light emitted by the LED chip will be described in the corresponding embodiment.

In addition, "LED package" is a component in which an "LED chip" is mounted on a substrate and the mounted "LED chip" is sealed with resin or resin containing a fluorescent material, or the "LED chip" It refers to a component whose upper surface, or upper surface and side surface, is only coated with a fluorescent material-containing resin, and includes a top emitting SMD (Surface Mounted Device), a side emitting SMD, and the like. Here, the fluorescent material refers to a material that absorbs light of a predetermined wavelength emitted from the "LED chip" and emits light of a different wavelength. , and the light emitted from the fluorescent material is mixed. In addition, the "LED package" may be configured so that the light of the wavelength outputted from the "LED chip" contained does not contain the fluorescent material and is emitted as it is.

Further, the term "light-emitting element" includes both forms of "LED chip" and "LED package", and refers to an element that emits light of a predetermined wavelength.

1A is a plan view of the light emitting device 100 according to the first embodiment, and FIG. 1B is a cross-sectional view taken along line AA shown in FIG. 1A.

The light emitting device 100 includes a substrate 10 having a first region 17 and a second region 18 arranged around the first region 17, 16 LED chips 20, a sealing material 31, a reflector 32, and a conductor. and a light material 33 . The encapsulant 31 contains a fluorescent material 30 that absorbs light of a first color emitted from the LED chip 20 and emits light of a second color different from the first color. Does not contain material 30. The sealing material 31 and the light guide material 33 transmit the first color light emitted from the LED chip 20 and the second color light emitted from the fluorescent material 30, and the reflector 32 transmits the first color light. It reflects light and light of a second color.

In the light-emitting device 100, the LED chips 20 are not arranged in the visible first region 17, so there is no possibility that the LED chips 20 will be visually recognized as luminance unevenness even during low-luminance light emission. In addition, in the light emitting device 100, the sealing material 31 containing the fluorescent material 30 is covered with the reflecting material 32, and the light guide material 33 not containing the fluorescent material 30 is arranged in the first region 17. The color is not visible from the outside, and there is no risk of deterioration in aesthetics.

The substrate 10 has a mounting substrate 11 , a circuit board 12 , an anode electrode 13 , a cathode electrode 14 , an anode wiring 15 and a cathode wiring 16 . The mounting substrate 11 is a substrate made of a metal such as aluminum having high thermal conductivity and high reflectance, and has a substantially rectangular planar shape. The mounting substrate 11 has a first region 17 having a substantially rectangular planar shape in the center and a second region 18 along the outer circumference of the first region 17 . The substrate 10 has flat surfaces on both the front surface and the back surface including the first region 17 and the second region 18 . The mounting substrate 11 has a pair of diagonally arranged corners that are notched.

The circuit board 12 is made of an insulating material such as an epoxy material, has the same planar shape as the mounting board 11 , and is adhered to the mounting board 11 . The circuit board 12 is formed with an opening surrounding a first area 17 and a second area 18 on which 16 LED chips 20 are mounted.

The anode electrode 13, the cathode electrode 14, the anode wiring 15, and the cathode wiring 16 are wiring patterns formed of a conductive thin film of copper or the like on the surface of the circuit board 12 opposite to the surface facing the mounting substrate 11. FIG. The anode electrode 13 and the cathode electrode 14 are arranged near the corners where the notches are not formed. The anode electrode 13 and the cathode electrode 14 are connected to a power source (not shown), and supply power to the LED chips 20 through the anode wiring 15 and the cathode wiring 16, respectively.

The portions of the anode wiring 15 and the cathode wiring 16 that are not covered with the sealing material 31 and the reflector 32 are covered with an insulating layer such as a resist. The anode wiring 15 is connected to the anode electrode 13 and is also connected via a bonding wire 21 to one of four light emitting elements arranged along each side of the first region 17 . The cathode wiring 16 is connected to the cathode electrode 14 and is also connected via a bonding wire 21 to one of four light emitting elements arranged along each side of the first region 17 .

The 16 LED chips 20 are semiconductor elements that emit blue light and are made of an InGaN-based compound semiconductor or the like whose emitted light has a wavelength range of 440 nm to 455 nm. Each of the 16 LED chips 20 has a substantially rectangular planar shape, and it is preferable to use elements having substantially the same light emission characteristics such as forward voltage (VF), temperature characteristics, and life.

The 16 LED chips 20 are mounted on the second region 18 of the substrate 10 four by four along each side of the first region 17 along the outer periphery of the first region 17 . Four LED chips 20 mounted in the second region 18 along each side of the first region 17 are connected in series between the anode electrode 13 and the cathode electrode 14 . The LED chips 20 are connected so as to connect in parallel four light emitting element arrays, each of which is connected in series.

Although 16 LED chips 20 are arranged in the light emitting device 100, the number of mounted LED chips 20 may be less than 16 or may be 17 or more. Also, in the light emitting device 100, four LED chips 20 are connected in series, but the number of LED chips 20 connected in series may be less than three, or may be five or more. Further, in the light emitting device 100, four light emitting element arrays are connected in parallel, but the number of light emitting element arrays connected in parallel may be less than three, or may be five or more.

The sealing material 31 is synthetic resin such as silicone resin containing the fluorescent material 30 . The encapsulant 31 is arranged along the outer periphery of the first region 17 so as to cover a portion of the anode wiring 15 and cathode wiring 16 as well as the LED chip 20 and the bonding wires 21 . The sealing material 31 has a frame-like planar shape surrounding the first region 17 .

The fluorescent material 30 contained in the encapsulant 31 is a fluorescent material that absorbs blue light, which is the first color emitted from the LED chip 20, and emits light of a second color different from the first color. is. The fluorescent material 30 is, for example, a selenium-activated YAG (yttrium-aluminum-garnet)-based fluorescent material that emits yellow light of 550 nm to 580 nm. In addition to the YAG-based fluorescent material that emits yellow light, the fluorescent material 30 is an Eu ²⁺ (europium) solid-solution CaAlSiN ₃ (calcium • Aluminum/silicone oxynitride) A fluorescent material may be added. Further, the fluorescent material 30 may be doped with a cerium-activated YAG-based fluorescent material that emits green light with a peak wavelength range of 535 nm to 570 nm, for example.

The fluorescent material 30 is a Eu ²⁺ (europium)-activated silicate-based fluorescent material that emits blue-green light with a peak wavelength range of 480 nm to 500 nm, or a barium silicone oxynitride fluorescent material. There may be. Further, the fluorescent material 30 may be an Eu ²⁺ (europium) solid solution CaAlSiN ₃ (calcium/aluminum/silicone oxynitride) fluorescent material that emits red light with a peak wavelength range of 600 nm to 630 nm. good. Furthermore, the fluorescent material 30 may contain multiple types of fluorescent materials. By varying the ratio of the fluorescent material contained in the fluorescent material 30, it is possible to provide light emitting devices having the same color temperature and different color rendering properties.

For example, the fluorescent material 30 may be a europium-activated orthosilicate fluorescent material that emits yellow light with a peak wavelength between 550 nm and 580 nm. The fluorescent material 30 includes a europium-activated orthosilicate fluorescent material that emits yellow light and a europium-activated strontium aluminate fluorescent material that emits yellow light with a peak wavelength of 480 nm to 500 nm. may contain. Further, it may include a europium-activated orthosilicate fluorescent material that emits yellow light and a calcium-aluminum-silicone oxynitride fluorescent material in solid solution with europium that emits red light.

The reflective material 32 is a synthetic resin such as silicone resin in which reflective fine particles such as titanium oxide are dispersed. It is a reflective material that reflects colored light. The reflector 32 is arranged to cover at least a portion of the upper portion of the sealing member 31 and surround the first region 17 . Similar to the sealing material 31 , the reflector 32 has a frame-like planar shape surrounding the first region 17 .

The reflector 32 is formed along the light guide member 33 so as to cover the upper side of the sealing member 31 and the side opposite to the first region 17 . Therefore, an opening 90 is formed by the reflector 32 on the first region 17 side of the sealing member 31 . The first color light emitted from the plurality of LED chips 20 and the second color light emitted from the fluorescent material 30 are reflected by the reflector 32 and emitted from the opening 90 to the light guide member 33 .

The light guide member 33 does not contain the fluorescent material 30 and is made of a synthetic resin such as silicone resin. pass through. The light guide member 33 guides the first color light emitted from the LED chip 20 and the second color light emitted from the fluorescent material 30 to the first region 17 . The light guided to the first region 17 is emitted to the outside from the entire upper surface of the first region 17 directly or after being reflected. That is, in the light-emitting device 100, the entire upper surface of the first region 17 emits surface light when the LED chip 20 is lit. By increasing the refractive index of the light guide member 33, surface light can be emitted without uneven brightness.

2A and 2B are diagrams showing the light emission state of the light emitting device 100. FIG. FIG. 2 is a cross-sectional view along line AA shown in FIG. 1A. In FIG. 2 , the dashed-dotted arrow line indicates the optical path of the light emitted from the LED chip 20 .

The light of the first color emitted from the LED chip 20 is reflected by the reflector 32 covering the sealing member 31, and is emitted from the light emitting device 100 to the outside through the first region 17 where the light guide member 33 is arranged. emitted. Part of the light of the first color emitted from the LED chip 20 is absorbed by the fluorescent material 30 contained in the sealing material 31 and emitted from the fluorescent material 30 as light of the second color.

A method for manufacturing the light emitting device 100 will be described with reference to FIGS. 3 shows the first step, FIG. 4 shows the second step, FIG. 5 shows the third step, FIG. 6 shows the fourth step, and FIG. 7 shows the fifth step. 3 to 7, drawings A are plan views, and drawings B are cross-sectional views corresponding to cross-sectional views taken along the line AA shown in FIG. 1A.

In a first step, a substrate 10 is provided. Then, in the second step, 16 LED chips 20 are mounted in the second area 18 along the outer circumference of the first area 17 . The 16 LED chips 20 are mounted four by four along one side of the first region 17 by die bonding (not shown). Next, in the third step, 16 LED chips 20 are connected in series by four bonding wires 21 between the anode wiring 15 and the cathode wiring 16 . The LED chip 20 arranged at one end of the four LED chips 20 mounted along one side of the first region 17 is connected to the anode wiring 15 via the bonding wire 21 . The LED chip 20 arranged at the other end of the four LED chips 20 mounted along one side of the first region 17 is connected to the cathode wiring 16 via the bonding wire 21 .

Then, in a fourth step, the encapsulant 31 is arranged to cover the LED chip 20 and the bonding wires 21 . Then, in a fifth step, the reflector 32 is arranged to cover the sealing member 31 and surround the first region 17 . The reflector 32 is arranged such that an opening 90 is formed along the first region 17 . Then, in the sixth step, the light guide member 33 is arranged in the first region 17 surrounded by the reflective member 32, and the manufacturing steps of the light emitting device 100 are completed.

A resin material having high thixotropy may be used for the sealing material 31, the reflecting material 32, and the light guiding material 33. FIG. When a resin material with high thixotropy is used as the sealing material 31, the reflecting material 32, and the light guiding material 33, even if the sealing material 31, the reflecting material 32, and the light guiding material 33 are solidified all at once after the sixth step, good. Further, when a resin material with low thixotropy is used as the sealing material 31, the reflecting material 32 and the light guiding material 33, the sealing material 31, the reflecting material 32 and the light guiding material are used in each of the fourth to sixth steps. 33 are solidified separately.

In the light-emitting device 100, the LED chips 20 are not arranged in the first region 17 visible from the outside, so there is no possibility that the LED chips 20 will be visually recognized as luminance unevenness, also called hot spots, during low-luminance light emission. In addition, since there is no possibility that the LED chip 20 will be visually recognized as uneven brightness, the light guide member 33 does not contain a diffusing material to prevent occurrence of uneven brightness. It never drops.

In addition, since the light-emitting device 100 does not cause luminance unevenness, high-luminance lighting can be achieved without controlling luminance unevenness in a light-emitting device such as a lighting device equipped with the light-emitting device 100 .

In addition, in the light emitting device 100, the sealing material 31 containing the fluorescent material 30 is covered with the reflecting material 32, and the light guide material 33 not containing the fluorescent material 30 is arranged in the first region 17. The color is not visible from the outside, and there is no risk of deterioration in aesthetics.

In addition, in the light emitting device 100, all the 16 LED chips 20 are mounted on the single mounting substrate 11, so temperature changes in all the 16 LED chips 20 are interlocked with each other, resulting in light emission dependent on temperature characteristics. There is little possibility that the characteristics will vary from each other.

Further, in the light emitting device 100, the light guide member 33 functioning as a light guide is arranged in the first region 17, so that light can be emitted without uneven brightness.

8A is a plan view of the light emitting device 101 according to the second embodiment, and FIG. 8B is a cross-sectional view taken along line BB shown in FIG. 8A.

The light emitting device 101 differs from the light emitting device 100 in that it has a first encapsulant 34 and a second encapsulant 35 instead of the encapsulant 31 . In the light-emitting device 101, the same components as those of the light-emitting device 100 are denoted by the same reference numerals, and description thereof is omitted.

The first sealing member 34 differs from the sealing member 31 in the arrangement position. The configuration and function of the first sealing member 34 are the same as those of the sealing member 31 except for the position where it is arranged, so detailed description thereof will be omitted here. The first encapsulant 34 is not arranged to cover the LED chip 20 but is arranged between the first region 17 and the LED chip 20 .

The second sealing material 35 does not contain the fluorescent material 30 and is made of synthetic resin such as silicone resin, like the light guide material 33 . The second encapsulant 35 is arranged to cover the LED chip 20 and the first encapsulant 34 . The reflector 32 is formed to cover the upper side of the first sealing member 34 , the upper side of the second sealing member 35 and the side opposite to the first region 17 .

In the light-emitting device 101, the first sealing material 34 arranged between the first region 17 and the LED chip 20 contains the fluorescent material 30, so that part of the light emitted from the LED chip 20 is It is absorbed by the fluorescent material 30 contained in the first encapsulant 34 before being emitted to the first region 17 . A part of the light emitted from the LED chip 20 is absorbed by the fluorescent material 30 , and light of the second color is emitted from the fluorescent material 30 . The first color light and the second color light are emitted outside from the light guide member 33 via the first region 17 .

The method for manufacturing the light-emitting device 101 includes the position where the first sealing material 34 is arranged, and the second sealing material 35 between the step of placing the first sealing member 34 and the step of placing the reflecting material 32 . It differs from the manufacturing method of the light-emitting device 100 in that it includes an arrangement step. The manufacturing method of the light-emitting device 101 other than the step of disposing the second sealing material 35 is the same as the manufacturing method of the light-emitting device 100, so detailed description is omitted here.

Since the light emitting device 101 has the first encapsulant 34 between the first region 17 and the LED chip 20 , the light of the first color and the light of the second color are mixed immediately before entering the first region 17 . light can be mixed and emitted. Since the light emitting device 101 mixes and emits light of the first color and light of the second color immediately before entering the first region 17, it is easier to adjust the chromaticity than the light emitting device 100. .

In addition, in the light emitting device 101, the first sealing member 34 containing the fluorescent material 30 is covered with the reflecting member 32, and the light guide member 33 not containing the fluorescent material 30 is arranged in the first region 17. The color of the fluorescent material is not visible from the outside, and there is no risk of deteriorating aesthetics.

9A is a plan view of the light emitting device 102 according to the third embodiment, and FIG. 9B is a cross-sectional view taken along line CC shown in FIG. 9A.

The light emitting device 102 differs from the light emitting device 100 in having a substrate 40 instead of the substrate 10 . In the light-emitting device 102, the same components as those of the light-emitting device 100 are denoted by the same reference numerals, and description thereof is omitted.

The board 40 differs from the board 10 in that it has a mounting board 41 instead of the mounting board 11 . The configurations and functions of the constituent elements of the substrate 40 other than the mounting substrate 41 are the same as the configurations and functions of the constituent elements of the substrate 10 to which the same reference numerals are assigned, so detailed descriptions thereof are omitted here.

The mounting board 41 differs from the mounting board 11 in that it has a first region 47 instead of the first region 17 . The configurations and functions of the components of the mounting substrate 41 other than the first region 47 are the same as the configurations and functions of the components of the mounting substrate 11 denoted by the same reference numerals, so detailed description thereof will be omitted here. The first region 47 differs from the first region 17 in that it is textured.

The method for manufacturing the light emitting device 102 is the same as the method for manufacturing the light emitting device 100 except that the mounting substrate 41 having the first region 47 textured is used, so detailed description thereof is omitted here. The texturing of the first region 47 is formed by etching while masking the region other than the first region 47 of the mounting board 41, for example.

Since the first region 47 of the light emitting device 102 is textured, the light of the first and second colors incident on the first region 47 is diffused in the first region 47 and mixed more than the light emitting device 100. In this state, light of the first and second colors can be emitted.

FIG. 10A is a plan view of a light emitting device 103 according to the fourth embodiment, and FIG. 10B is a cross-sectional view taken along line DD shown in FIG. 10A.

The light emitting device 103 differs from the light emitting device 100 in having a light guide material 36 instead of the light guide material 33 . In the light emitting device 103, the same components as those of the light emitting device 100 are denoted by the same reference numerals, and description thereof is omitted.

The light guide member 36 differs from the light guide member 33 in that the surface is dimpled. The configuration and function of the light guide member 36 are the same as those of the light guide member 33 denoted by the same reference numerals, except that the surface is dimpled, so detailed description thereof will be omitted here.

The method for manufacturing the light emitting device 103 is the same as the method for manufacturing the light emitting device 100 except that the surface of the light guide member 36 is dimpled after the light guide member 36 is arranged, so detailed description thereof is omitted here. do. The dimple processing on the surface of the light guide member 36 is formed by subjecting the surface of the light guide member 36 to laser processing, for example.

In the light emitting device 103, since the surface of the light guide member 36 is dimpled, the first and second color lights incident on the surface of the light guide member 36 are diffused on the surface of the light guide member 36 to emit light. The light of the first and second colors can be emitted in a more mixed state than the device 100 .

Further, in the light emitting device 103, instead of the mounting substrate 11, the mounting substrate 41 having the textured first region 47 described in the light emitting device 102 may be used.

11A is a plan view of the light emitting device 104 according to the fifth embodiment, and FIG. 11B is a cross-sectional view taken along line EE shown in FIG. 11A.

The light-emitting device 104 differs from the light-emitting device 100 in having a sealing material 37 instead of the sealing material 31 . Further, the light emitting device 104 differs from the light emitting device 100 in that it has a first LED chip 51, a second LED chip 52 and a third LED chip 53 instead of the LED chip 20. FIG. In the light emitting device 104, the same components as those of the light emitting device 100 are denoted by the same reference numerals, and descriptions thereof are omitted.

The encapsulant 37 differs from the encapsulant 31 in that it does not contain the fluorescent material 30 . The configuration and function of the encapsulant 37 are the same as those of the encapsulant 31, except that the encapsulant 37 does not contain the fluorescent material 30, so detailed description thereof is omitted here. The sealing material 37 is arranged so as to cover each of the first LED chip 51 , the second LED chip 52 and the third LED chip 53 .

The first LED chip 51, like the LED chip 20, is a semiconductor element that emits blue light with a wavelength range of 440 nm to 455 nm, and is labeled with letter "B" in FIG. 11A. The second LED chip 52 is a semiconductor element that emits green light and is formed of an InGaN-based compound semiconductor or the like, emitting light in a wavelength range of 505 nm to 555 nm, and is labeled with letter "G" in FIG. 11A. The third LED chip 53 is a semiconductor element that emits red light and is made of a GaAsP-based compound semiconductor or the like, and emits light in a wavelength range of 620 nm to 750 nm.

Blue emitted by the first LED chip 51 is an example of first color light, green emitted by the second LED chip 52 is an example of a second color light, and red emitted by the third LED chip 53 is an example of a second color light. 3 is an example of light.

The method for manufacturing the light emitting device 104 is the same as the method for manufacturing the light emitting device 100 except that the first LED chip 51, the second LED chip 52 and the third LED chip 53 are mounted instead of the LED chip 20, so a detailed description will be given here. are omitted.

In the light emitting device 104, since the first LED chip 51, the second LED chip 52 and the third LED chip 53 are not arranged in the visible first region 17, the first LED chip 51, the second LED chip 52 and the third LED chip 51, 52 and the third LED chip 53 are not arranged in the visible first region 17 even during light emission with low brightness. There is no risk that the 3LED chips 53 will be visually recognized as luminance unevenness.

Further, in the light emitting device 104, the first LED chip 51, the second LED chip 52, and the third LED chip 53 are not arranged in the visible first region 17, the sealing material 37 does not contain the fluorescent material 30, and the fluorescent material 30 Since the light guide material 33 that does not contain is arranged in the first region 17, the color of the fluorescent material is not visible from the outside when the light is turned off, and there is no possibility that the aesthetic appearance will deteriorate.

In the case where the third LED chip 53 is a GaAs-based red light emitting semiconductor element with poor temperature characteristics, if the third LED chip 53 is mounted on the same mounting substrate as the first LED chip 51, which is a blue light emitting semiconductor element, the heat generated by the first LED chip 51 will increase. You may be affected. Therefore, in the light emitting device 104, the third LED chip 53 is replaced with an LED package in which the periphery of the blue light emitting semiconductor element is sealed with a resin containing a red fluorescent material that absorbs blue light and emits red light. Also good. By using such an LED package, the effect of temperature rise can be made the same for chips or packages that emit light of each color.

Further, in the light emitting device 104, the second LED chip 52 is replaced with a first LED package in which the periphery of the blue light emitting semiconductor element is sealed with a resin containing a green fluorescent material that absorbs blue light and emits green light, and the third LED The chip 53 may be replaced with a second LED package in which the periphery of the blue light emitting semiconductor element is sealed with a resin containing a red fluorescent material that absorbs blue light and emits red light. Even in this case, since the first LED chip 51, the first LED package, and the second LED package are covered with the reflecting material 32, the color of the fluorescent material is not visible from the outside when the light is turned off, and there is no possibility that the aesthetic appearance will deteriorate.

In the light-emitting device 104, instead of the mounting substrate 11, the mounting substrate 41 having the textured first region 47 described in the light-emitting device 102 may be used. Further, in the light emitting device 104, instead of the light guide member 33, the light guide member 36 having a dimpled surface described in the light emitting device 103 may be used. Furthermore, in the light emitting device 104, both the mounting substrate 41 having the textured first region 47 and the light guide material 36 having a dimpled surface may be used.

12A is a cross-sectional view of a light-emitting device 105 according to a first modification of the light-emitting device 100, FIG. 12B is a cross-sectional view of a light-emitting device 106 according to a second modification of the light-emitting device 100, and FIG. 12C is a light-emitting device 100. is a cross-sectional view of a light-emitting device 107 according to a third modified example of FIG. 12A-12C are cross-sectional views corresponding to the cross-sectional view taken along line AA shown in FIG. 1A.

Each of the light emitting devices 105 to 107 differs from the light emitting device 100 in that it has a filler 38 arranged between the encapsulant 31 and the reflector 32 . In the light-emitting devices 105 to 107, the same components as those of the light-emitting device 100 are denoted by the same reference numerals, and description thereof is omitted.

The filler 38 is a synthetic resin such as silicone resin that does not contain the fluorescent material 30 , like the light guide member 33 , and is arranged so as to cover the sealing member 31 . In the light-emitting device 105 , the filler 38 is arranged so as to cover the entire surface of the sealing material 31 . In the light-emitting device 106, the filling material 38 is arranged so as to cover the surface of the sealing material 31 excluding the surface in contact with the light guide material 33. In the light-emitting device 107, the filling material 38 is the light guide material of the sealing material 31. It is arranged so as to cover the surface except for the surface opposite to the surface in contact with 33 .

In the light-emitting devices 103 and 104 described above, a filler may be arranged between the sealing material 31 and the reflector 32 in the same manner as in the light-emitting devices 105 to 107 described above. By arranging the filler between the sealing material 31 and the reflecting material 32, the amount of light absorbed by the reflecting material 32 among the lights emitted from the LED chip 20 and the sealing material 31 can be reduced. , the light can be efficiently guided to the first region 17 .

13A is a cross-sectional view of a light-emitting device 108 according to a fourth modification of the light-emitting device 100, and FIG. 13B is a cross-sectional view of a light-emitting device 109 according to a fifth modification of the light-emitting device 100. FIG. 13A and 13B are cross-sectional views corresponding to the cross-sectional view taken along line AA shown in FIG. 1A.

Each of the light emitting devices 108 and 109 differs from the light emitting device 100 in that it has a diffusion layer 39 arranged to cover the light guide material 33 . In the light-emitting devices 108 and 109, the same components as those of the light-emitting device 100 are denoted by the same reference numerals, and description thereof is omitted.

The diffusion layer 39 is a synthetic resin such as a silicone resin containing a filler made of silica, titanium oxide, or the like, and is arranged so as to cover the light guide member 33 . In the light emitting devices 108 and 109 , the diffusion layer 39 is arranged to cover the entire surface of the light guide material 33 . In addition, in the light emitting device 109 , the light guide member 33 is arranged so as to cover the sealing member 31 in addition to the first region 17 .

In the light-emitting devices 101 to 107 described above, a diffusion layer may be arranged on the light guide material 33 or 36 as in the light-emitting devices 108 and 109 described above. By arranging the diffusion layer on the light guide material 33 or 36, the luminance unevenness can be further reduced.

14 is a plan view of a light emitting device 110 according to a sixth modification of the light emitting device 100, FIG. 15 is a plan view of a light emitting device 111 according to a seventh modification of the light emitting device 100, and FIG. is a plan view of a light emitting device 112 according to an eighth modified example of FIG. A cross-sectional view of the light emitting devices 110 to 112 taken along line AA is similar to FIG. 1B.

Each of the light-emitting devices 110 to 112 differs from the light-emitting device 100 in having a first encapsulant 81 and a second encapsulant 82 instead of the encapsulant 31 . In the light-emitting devices 110 to 112, the same components as those of the light-emitting device 100 are denoted by the same reference numerals, and description thereof is omitted.

The first sealing material 81 is a synthetic resin such as silicone resin containing an orthosilicate fluorescent material activated with europium that absorbs light emitted from the LED chip 20 and emits yellow light. In this case, when light is emitted from the LED chip 20, the blue light emitted from the LED chip 20 and the yellow light emitted from the fluorescent material contained in the first sealing material 81 are mixed. For example, cold white light with a color temperature of 6500K is emitted from the first sealing member 81 .

The first encapsulant 81 is silicone containing a cerium-activated YAG (yttrium-aluminum-garnet) fluorescent material that absorbs light emitted from the LED chip 20 and emits yellow light. Synthetic resin such as resin may be used. In this case, when light is emitted from the LED chip 20, the blue light emitted from the LED chip 20 and the yellow light emitted from the fluorescent material contained in the first sealing material 81 are mixed. For example, cold white light with a color temperature of 6500K is emitted from the first sealing member 81 .

The second sealing material 82 is a cerium-activated YAG (yttrium-aluminum-garnet)-based fluorescent material that absorbs light emitted from the LED chip 20 and emits yellow light, and emits red light. It is a synthetic resin such as a silicone resin containing a _CaAlSiN3 fluorescent material in solid solution with europium. When light is emitted from the LED chip 20, the blue light emitted from the LED chip 20 and the green and red light emitted from the fluorescent material contained in the second sealing material 82 are mixed. Warm white light with a color temperature of 2700K is emitted from the second sealing material 82).

The second sealing material 82 is composed of a cerium-activated YAG-based fluorescent material that absorbs light emitted from the LED chip 20 and emits green light, and a europium solid solution that emits red light. Synthetic resin such as silicone resin containing CaAlSiN ₃ fluorescent material may be used. When light is emitted from the LED chip 20, the blue light emitted from the LED chip 20 and the green and red light emitted from the fluorescent material contained in the second sealing material 82 are mixed. Warm light with a color temperature of 2700K is emitted from the first sealing member 81 .

In the light-emitting device 110, the pair of first sealing members 81 and the pair of second sealing members 82 are arranged to extend parallel to each other along a pair of opposing sides. In the light-emitting device 111, each of the first pair of one sealing member 81 and the pair of second sealing member 82 is arranged to extend in directions perpendicular to each other on a pair of adjacent sides. In the light-emitting device 112, each of the first sealing member 81 and the second sealing member 82 is arranged to extend along a pair of adjacent sides.

In the light emitting devices 110 to 112, all 16 LED chips 20 are connected to a pair of electrode pairs, that is, the anode electrode 13 and the cathode electrode 14, but the LED chip 20 is connected to two pairs of electrodes. may When the LED chip 20 is connected to the two pairs of electrodes, one electrode pair is connected to the LED chip 20 sealed by the first sealing material 81, and the other electrode pair is connected to the second sealing material. The LED chip 20 sealed by 82 is connected.

In addition, in the light emitting devices 101 to 103 and 105 to 109, the sealing material 31 or the sealing material 34 contains the same fluorescent material 30, but like the light emitting devices 110 to 112, may contain different fluorescent materials depending on the

17A is a plan view of a light emitting device 113 according to the sixth embodiment, and FIG. 17B is a cross-sectional view taken along line AA shown in FIG. 17A.

The light emitting device 113 differs from the light emitting device 100 in the configurations of the sealing material 231 , the reflecting material 232 , the light guiding material 233 and the diffusion layer 234 . In the light-emitting device 113, the same components as those of the light-emitting device 100 are denoted by the same reference numerals, and description thereof is omitted.

The light emitting device 113 includes a substrate 10 having a first region 17 and a second region 18 arranged around the first region 17, 16 LED chips 20, a sealing material 231, a reflector 232, and a conductor. It has a light material 233 and a diffusion layer 234 . The sealing material 231 contains the fluorescent material 30 that absorbs the first light having the first wavelength emitted from the LED chip 20 and emits the second light having the second wavelength different from the first wavelength. 233 does not contain fluorescent material 30 . The sealing material 231 and the light guide material 233 transmit the first light emitted from the LED chip 20 and the second light emitted from the fluorescent material 30, and the reflector 232 reflects the first light and the second light. The light guide member 233 is arranged so that its outer edge overlaps the sealing member 231 when viewed from above.

In the light emitting device 113, the LED chips 20 are not arranged in the first region 17 visible from the outside, so there is no possibility that the LED chips 20 will be visually recognized as luminance unevenness. In the light emitting device 113, the sealing material 231 containing the fluorescent material 30 is covered with the reflecting material 232, and the light guide material 233 containing no fluorescent material 30 is arranged in the first region 17. The color is not visible from the outside, and there is no risk of deterioration in aesthetics.

In the light-emitting device 113 , the light guide member 233 is arranged so that the outer edge overlaps with the sealing member 231 when the substrate 10 is viewed from above. Since the emitted light is emitted to the first region 17, the luminous efficiency can be increased.

The sealing material 231 is synthetic resin such as silicone resin containing the fluorescent material 30 . The encapsulant 231 is arranged along the outer periphery of the first region 17 so as to cover a portion of the anode wiring 15 and the cathode wiring 16 as well as the LED chip 20 and the bonding wires 21 . The sealing material 231 has a frame-like planar shape surrounding the first region 17 .

The fluorescent material 30 contained in the encapsulant 231 absorbs the light emitted from the LED chip 20 and has a second wavelength different from the first wavelength, which is the wavelength of the light emitted from the LED chip 20 . It is a phosphor that emits light. The fluorescent material 30 is, for example, a selenium-activated YAG (yttrium-aluminum-garnet) phosphor that emits yellow light of 550 nm to 580 nm. The fluorescent material 30 is a YAG-based phosphor that emits yellow light, and ^CaAlSiN 3 (CaAlSiN ₃ (calcium • Aluminum/silicone oxynitride) Phosphors may be added. Further, the fluorescent material 30 may be doped with a cerium-activated YAG-based phosphor that emits green light with a peak wavelength range of 535 nm to 570 nm, for example.

The fluorescent material 30 is an Eu ²⁺ (europium)-activated silicate-based phosphor or a barium silicone oxynitride phosphor that emits blue-green light with a peak wavelength range of 480 nm to 500 nm. There may be. The fluorescent material 30 may be an Eu ²⁺ (europium) solid-solution CaAlSiN ₃ (calcium-aluminum-silicone oxynitride) phosphor that emits red light with a peak wavelength range of 600 nm to 630 nm. good. Furthermore, the fluorescent material 30 may contain multiple kinds of fluorescent substances. By varying the ratio of the phosphors contained in the fluorescent material 30, it is possible to provide light emitting devices having the same color temperature and different color rendering properties.

For example, the fluorescent material 30 may be a europium-activated orthosilicate phosphor that emits yellow light with a peak wavelength between 550 nm and 580 nm. The fluorescent material 30 includes a europium-activated orthosilicate phosphor that emits yellow light and a europium-activated strontium aluminate phosphor that emits yellow light with a peak wavelength of 480 nm to 500 nm. may contain. Furthermore, a europium-activated orthosilicate phosphor that emits yellow light and a europium solid-solution calcium-aluminum-silicone oxynitride phosphor that emits red light may be included.

The reflective material 232 is a synthetic resin such as silicone resin in which reflective fine particles such as titanium oxide are dispersed. reflect yellow light. The reflector 232 is arranged so as to partially cover the anode wiring 15 and the cathode wiring 16 and surround the first region 17 . The reflector 232 has a frame-like planar shape surrounding the first region 17 .

The reflector 232 is formed along the light guide member 233 so as to cover the upper side of the sealing member 231 and the side opposite to the first region 17 . Therefore, an opening 90 is formed by the reflector 232 on the first region 17 side of the sealing member 231 . The first color light emitted from the plurality of LED chips 20 and the second color light emitted from the fluorescent material 30 are reflected by the reflector 232 and emitted from the opening 90 to the light guide member 233 .

The light guide member 233 is a synthetic resin such as silicone resin that does not contain the fluorescent material 30 , and transmits the light emitted from the sealing member 231 while propagating it to the first region 17 . The light guide member 233 is arranged adjacent to the opening 90 in the first region 17 surrounded by the reflector 232 so that the outer edge of the light guide member 233 overlaps the sealing member 231 when the substrate 10 is viewed from above. The height of the light guide member 233 is the highest in the central portion of the first region 17 and is arranged so as to gradually decrease toward the outer edge of the light emitting region. The light guide material 233 preferably has high thixotropy.

The refractive index of the light guide material 233 is, for example, 1.46. Since the light guide member 233 has a higher refractive index than the diffusion layer 234 , the critical angle between the light guide member 233 and the diffusion layer is increased, and the light emitted from the sealing member 231 passes through the light guide member 233 and the diffusion layer 234 are likely to cause total reflection. The light emitted from the sealing member 231 is easily totally reflected between the light guide member 233 and the diffusion layer 234, so that the light is guided to the central portion of the light emitting region inside the light guide member 233, thereby forming the light emitting device. 113 can emit surface light without luminance unevenness.

The diffusion layer 234 is a synthetic resin such as silicone resin containing a filler made of silicon dioxide or the like and titanium oxide or the like, and has a substantially rectangular planar shape. The refractive index of the diffusion layer 234 is, for example, 1.41.

The height of the surface of the diffusion layer 234 is approximately equal to the height of the reflector 232 and has a substantially uniform height over the entire surface. Since the surface of the diffusion layer 234 has a substantially uniform height and the height of the light guide member 233 gradually decreases from the central portion toward the outer edge of the first region 17, the thickness of the diffusion layer 234 is The central portion of the first region 17 is the thinnest, and the thickness gradually increases toward the outer edge of the first region 17 .

The diffusion layer 234 diffuses the light emitted from the encapsulant 231 and guided by the light guide member 233 to improve color mixing. The diffusion layer 234 is arranged to cover the light guide member 233 in the first region 17 surrounded by the reflector 232 , and diffuses the light emitted from the sealing member 231 and guided by the light guide member 233 to the first region 17 . 17 is surface-emitted from the upper surface and emitted to the outside.

18A and 18B are diagrams showing the light emitting state of the light emitting device 113. FIG. FIG. 18 is a cross-sectional view along line AA shown in FIG. 17A. In FIG. 18 , the dashed-dotted arrow indicates the optical path of the light emitted from the LED chip 20 .

The blue light emitted from the LED chip 20 is reflected by the reflective material 232 covering the sealing material 231 and is emitted from the light emitting device 113 to the outside through the first region 17 where the light guide material 233 and the diffusion layer 234 are arranged. emitted to Also, part of the blue light emitted from the LED chip 20 is absorbed by the fluorescent material 30 contained in the sealing material 231 and emitted from the fluorescent material 30 as yellow light.

A method for manufacturing the light emitting device 113 will be described with reference to FIGS. 19 to 24. FIG. 19 shows the first step, FIG. 20 shows the second step, FIG. 21 shows the third step, FIG. 22 shows the fourth step, FIG. 23 shows the fifth step, and FIG. 24 shows the sixth step. Show the process. 19 to 24, drawings A are plan views, and drawings B are cross-sectional views corresponding to cross-sectional views taken along line AA shown in FIG. 17A.

In a first step, a substrate 10 is provided. Then, in the second step, 16 LED chips 20 are mounted in the second area 18 along the outer circumference of the first area 17 . The 16 LED chips 20 are mounted along one side of the first region 17 by four pieces. Next, in the third step, 16 LED chips 20 are connected in series by four bonding wires 21 between the anode wiring 15 and the cathode wiring 16 . The LED chip 20 arranged at one end of the four LED chips 20 mounted along one side of the first region 17 is connected to the anode wiring 15 via the bonding wire 21 . The LED chip 20 arranged at the other end of the four LED chips 20 mounted along one side of the first region 17 is connected to the cathode wiring 16 via the bonding wire 21 .

Then, in a fourth step, a sealing material 231 is arranged to cover the LED chip 20 and the bonding wires 21 . First, the pre-hardening resin of the encapsulant 231 containing the fluorescent material 30 is arranged so as to cover the LED chip 20 and the bonding wires 21 . Next, the substrate 10 is heated to solidify the resin of the sealing material 231 before solidification, thereby forming the sealing material 231 .

Next, in a fifth step, the light guide member 233 is arranged in the first region 17 so as to cover the inner wall of the sealing member 231 . The resin of the light guide material 233 before solidification is arranged so as to cover the top portion and the inner wall of the sealing material 231 . First, the resin of the light guide material 233 before solidification is arranged in a mountain shape in which the height decreases from the central portion toward the outer edge of the first region 17 . By using a resin having high thixotropy before solidification, the light guide material 233 can be arranged in a mountain shape having a top in the center. Next, the light guide material 233 is formed by heating the substrate 10 to solidify the resin of the light guide material 233 before solidification.

Next, in a sixth step, the reflector 232 is arranged along the first region 17 so as to cover the entire surface of the sealing member 231 and the outer edge of the light guide member 233 . First, the resin of the reflecting material 232 before solidification is arranged so as to cover the sealing material 231 . Next, the reflecting material 232 is formed by heating the substrate 10 to solidify the resin of the reflecting material 232 before solidification.

Then, in a seventh step (not shown), the diffusion layer 234 is arranged inside the reflector 232 so as to cover the light guide 233 . First, the pre-hardening resin of the diffusion layer 234 is arranged inside the reflector 232 so as to have a substantially uniform surface height and cover the light guide member 233 . Next, the substrate 10 is heated to solidify the resin of the diffusion layer 234 before solidification, thereby forming the diffusion layer 234 and completing the manufacturing process of the light emitting device 113 .

In the light-emitting device 113, the LED chips 20 are not arranged in the first region 17 visible from the outside, so there is no possibility that the LED chips 20 will be visually recognized as luminance unevenness, also called hot spots. In addition, since the light-emitting device 113 does not cause luminance unevenness, high-luminance lighting can be realized without controlling luminance unevenness in a light-emitting device such as a lighting device equipped with the light-emitting device 113 .

In the light emitting device 113 , the sealing material 231 containing the fluorescent material 30 is covered with the reflecting material 232 that is a reflecting material, and the light guiding material 233 containing no fluorescent material 30 is arranged in the first region 17 . Since the fluorescent material 30 is not arranged in the first region 17 of the light emitting device 113, the color of the fluorescent material is not visible from the outside when the light is turned off, and there is no possibility that the aesthetic appearance will deteriorate.

In addition, in the light emitting device 113, all the 16 LED chips 20 are mounted on the single mounting substrate 11, so temperature changes in all the 16 LED chips 20 are interlocked with each other, resulting in light emission dependent on temperature characteristics. There is little possibility that the characteristics will vary from each other.

Further, in the light emitting device 113, the light guide member 233 functioning as a light guide is arranged in the first region 17, so that light can be emitted without luminance unevenness. In addition, in the light emitting device 1, the light guide member 233 has a higher refractive index than the diffusion layer 234. Therefore, the light is guided to the central portion of the light emitting region inside the light guide member 233, and the light emitting device 1 has a surface without luminance unevenness. It can emit light.

In the light emitting device 113, the thickness of the diffusion layer 234 is the thinnest in the central portion of the first region 17 and gradually increases toward the outer edge of the first region 17. Therefore, the central portion of the first region 17 is , the outer edge of the first region 17 is easier to transmit light. In the light emitting device 113 , the LED chips 20 are arranged so as to surround the outer periphery of the first region 17 . Low light. In the light emitting device 113 , the thickness of the diffusion layer 234 is made thinner at the center of the first region 17 than at the outer edge of the first region 17 , so that the center of the first region 17 due to the distance from the LED chip 20 is reduced. It is possible to suppress the occurrence of luminance unevenness between the portion and the outer edge.

25A is a plan view of a light emitting device 114 according to the seventh embodiment, and FIG. 25B is a cross-sectional view taken along line BB shown in FIG. 25A.

The light emitting device 114 differs from the light emitting device 113 in that it has a frame member 235 and a shielding member 236 instead of the reflector 232 and a diffusion layer 237 instead of the diffusion layer 234 . In the light emitting device 114, the same components as those of the light emitting device 113 are denoted by the same reference numerals, and description thereof is omitted.

The frame member 235 is made of a synthetic resin such as silicone resin in which reflective fine particles such as titanium oxide are dispersed, similarly to the reflector 232. It is arranged so as to surround the reflector 236 and has a frame-like planar shape.

Similar to the reflector 232 , the shielding member 236 is a synthetic resin such as silicone resin in which reflective fine particles such as titanium oxide are dispersed, and reflects light emitted from the LED chip 20 and the fluorescent material 30 . In addition, the shielding member 236 has a lower content of reflective fine particles than the reflecting member 232 and the frame member 235 , and transmits part of the light emitted from the LED chip 20 and the fluorescent material 30 . The transmittance of the shielding member 236 is preferably 30% or more and 70% or less, more preferably 40% or more and 60% or less. By transmitting part of the light emitted from the LED chip 20 and the fluorescent material 30 through the shielding member 236, the occurrence of luminance unevenness above the shielding member 236 is suppressed.

In the light emitting device 114 , the frame member 235 and the shielding member 236 serve as the reflector 232 of the light emitting device 113 . That is, the frame member 235 and the shielding member 236 are arranged above the sealing material 231 and on the side opposite to the first region 17 to reflect the light emitted from the sealing material 231 and guide the reflected light. It leads to the material 233 side.

Like the diffusion layer 234, the diffusion layer 237 is a synthetic resin such as silicone resin containing a filler made of silicon dioxide or the like and titanium oxide or the like. The surface of the diffusion layer 237 may be flat, or may have a convex shape with the top at the center of the first region 17 or a concave shape with the bottom at the center of the first region 17 . The thickness of the central portion of the diffusion layer 237 is thinner than the thickness of the outer edge portion of the diffusion layer 237 . As with the diffusion layer 234 , the thickness of the diffusion layer 237 is the thinnest in the central portion of the first region 17 and gradually increases toward the outer edge of the first region 17 .

A method for manufacturing the light emitting device 114 will be described with reference to FIGS. The first to fifth steps of manufacturing the light emitting device 114 are the same as the first to fifth steps of manufacturing the light emitting device 113 shown in FIGS. 26 shows the sixth step of the method for manufacturing the light emitting device 114 shown in FIG. 25, and FIG. 27 shows the seventh step of the method for manufacturing the light emitting device 114 shown in FIG. 26 and 27, A drawing is a plan view, and B drawing is a cross-sectional view taken along line BB shown in A drawing.

After the light guide member 233 is arranged in the fifth step, the frame member 235 is arranged so as to surround the sealing member 231 in the sixth step. First, the resin of the frame member 235 before hardening is arranged so as to surround the sealing material 231 . The resin of the frame member 235 before solidification has a high thixotropic property and can be arranged like a wall. Next, the frame member 235 is formed by heating the substrate 10 to solidify the resin of the frame member 235 before solidification.

Next, in a seventh step, the shielding member 236 is arranged along the inner wall of the frame member 235 so as to cover the entire surface of the sealing member 231 and cover the outer edge of the light guide member 233 . First, the resin of the shielding member 236 before hardening is arranged along the inner wall of the frame member 235 so as to cover the sealing material 231 . Next, the shielding member 236 is formed by heating the substrate 10 to solidify the resin of the shielding member 236 before solidification. Also, the sixth step may be performed before the seventh step, for example, after the third step.

Then, in an eighth step (not shown), the diffusion layer 237 is arranged inside the frame member 235 so as to cover the light guide member 233 . First, the pre-hardening resin of the diffusion layer 237 is arranged inside the frame member 235 so as to form a concave shape whose bottom is the central portion of the first region 17 and to cover the light guide member 233 . Next, the diffusion layer 237 is formed by heating the substrate 10 to solidify the resin of the diffusion layer 237 before solidification.

Since the first region 17 of the light emitting device 114 is surrounded by the frame member 235 that reflects the first light and the second light, the first light and the second light can be efficiently emitted above the first region 17. .

Further, in the light-emitting device 114 , similarly to the light-emitting device 113 , the thickness of the diffusion layer 237 is made thinner in the central portion of the first region 17 than in the outer edge of the first region 17 , so that the distance between the LED chip 20 and the LED chip 20 is reduced. It is possible to suppress the occurrence of luminance unevenness between the central portion and the outer edge of the first region 17 caused by . In the light-emitting device 114, since the surface of the diffusion layer 237 is a spherical recess whose bottom is the center of the first region 17, the thickness of the diffusion layer 237 in the center of the first region 17 is reduced. , the occurrence of luminance unevenness can be further suppressed.

In the light emitting device 114, part of the blue and yellow light emitted from the LED chip 20 and the fluorescent material 30 passes through the shielding member 236 and is emitted from the light emitting device 114 to the outside through the diffusion layer 237. Therefore, it is possible to prevent a dark portion from being generated above the shielding member 236, thereby preventing luminance unevenness from occurring. It should be noted that the transmittance of the shielding member 236 is preferably 30% or more and 70% or less. Therefore, when the light-emitting device 114 is turned off, the color of the fluorescent material is not visible from the outside, and there is no possibility that the aesthetic appearance will deteriorate.

28A is a plan view of a light emitting device 115 according to the eighth embodiment, and FIG. 28B is a cross-sectional view along line CC shown in FIG. 28A.

The light emitting device 115 differs from the light emitting device 113 in that it has a light guide material 238 and a plurality of dots of resin 239 instead of the light guide material 233 and the diffusion layer 234 . In the light emitting device 115, the same components as those of the light emitting device 113 are denoted by the same reference numerals, and description thereof is omitted.

The light guide member 238 differs from the light guide member 233 in that the height of the surface is substantially uniform. The configuration and function of the light guide member 238 are the same as the configuration and function of the light guide member 233, except that the height of the surface is uniform, so detailed description thereof will be omitted here.

The plurality of dot-shaped resins 239 are also referred to as resin dots, and are synthetic resins such as silicone resins containing fillers formed of silicon dioxide or the like and white resins such as titanium oxide. placed in The plurality of dot-shaped resins 239 are arranged such that the arrangement pitch gradually widens from the central portion of the first region 17 toward the outer edge.

The manufacturing method of the light emitting device 115 is the same as the manufacturing method of the light emitting device 113 except that a plurality of dot-shaped resins 239 are arranged instead of the diffusion layer 234, so detailed description is omitted here.

In the light emitting device 115, the plurality of dot-shaped resins 239 are arranged such that the arrangement pitch gradually widens from the central portion toward the outer edge of the first region 17, so that light with low luminance unevenness can be emitted. . Note that the method of arranging the plurality of dot-shaped resins 239 is not limited to the method shown in the light emitting device 115, and other arrangement methods may be used as long as the luminance unevenness can be reduced.

29A is a plan view of the light emitting device 116 according to the ninth embodiment, and FIG. 29B is a cross-sectional view taken along line DD shown in FIG. 29A.

The light emitting device 116 differs from the light emitting device 113 in that it has a light guide material 240 instead of the light guide material 233 and does not have a diffusion layer 234 . In the light-emitting device 116, the same components as those of the light-emitting device 113 are denoted by the same reference numerals, and descriptions thereof are omitted.

The light guide member 240 differs from the light guide member 233 in that the surface is dimpled. The configuration and function of the light guide member 240 are the same as the configuration and function of the light guide member 233 except that the surface is dimpled, so detailed description thereof will be omitted here. The depth of the dimples formed on the surface of the light guide member 240 is formed so as to gradually decrease from the central portion of the first region 17 toward the outer edge.

The method for manufacturing the light emitting device 116 is the same as the method for manufacturing the light emitting device 113 except that the surface of the light guide member 233 is dimpled after the light guide member 233 is arranged, so detailed description thereof is omitted here. do. The dimple processing on the surface of the light guide member 233 is formed by subjecting the surface of the light guide member 233 to laser processing, for example. The surface of the light guide member 233 is dimpled such that the depth of the dimples gradually decreases from the central portion of the first region 17 toward the outer edge. The inside of the dimpled portion may be hollow (air), or may be filled with a transparent resin or the like. By filling the inside of the dimpled portion with the projection resin layer, it is possible to prevent deterioration of the optical characteristics due to wear of the dimple shape. Further, since the refractive index of the air and the transparent resin is lower than the refractive index of the light guide member 240, the dimpled portion also functions as a low refractive index layer.

In the light emitting device 116, since the surface of the light guide member 240 is dimpled, it is possible to suppress the occurrence of luminance unevenness without arranging the diffusion layer 234. FIG. Note that the arrangement and height of each dimple need not be the arrangement and height shown in the light emitting device 116, and other arrangement methods may be used as long as the luminance unevenness can be reduced.

In addition, although the light emitting device 116 uses the mounting substrate 11 having the flat first region 17, the surface of the light guide member 240 is dimpled and the surface of the first region 17 is textured. A substrate may be used.

FIG. 30A is a plan view of the light emitting device 117 according to the tenth embodiment, and FIG. 30B is a cross-sectional view taken along line EE shown in FIG. 30A.

The light emitting device 117 differs from the light emitting device 113 in that it has a protrusion 241 . In the light emitting device 117, the same components as those of the light emitting device 113 are denoted by the same reference numerals, and descriptions thereof are omitted.

The protrusion 241 is made of a highly reflective material such as aluminum and has a conical shape. The protrusion 241 has a top portion 242 , an outer edge portion 243 and side portions 244 , and is arranged such that the top portion 242 is positioned at the center of the first region 17 . The apex 242 is the apex of the projection 241 and is located at the center of the reflecting member when viewed from above. The outer edge portion 243 is lower in height than the top portion 242 and is arranged to surround the top portion 242 . The side portion 244 is arranged between the top portion 242 and the outer edge portion 243 and reflects light emitted from the encapsulant 231 . Moreover, the protrusion 241 may be made of synthetic resin such as silicone resin in which reflective fine particles such as titanium oxide are dispersed. Here, the conical shape includes a substantially conical shape such as a shape in which the vertex 242 is rounded, a shape in which the planar shape of the outer edge portion 243 is not a perfect circle and includes unevenness, and a shape in which the side surface 243 includes unevenness.

The manufacturing method of the light-emitting device 117 differs from the manufacturing method of the light-emitting device 113 in that the reflecting member placement step of placing the protrusion 241 is included between the second step and the third step in the manufacturing process of the light-emitting device 113. do. In the reflective member placement step, the projection 241 is adhered to the central portion of the first region 17 with an adhesive. Further, when the protrusion 241 is made of a synthetic resin such as silicone resin in which reflective fine particles such as titanium oxide are dispersed, the protrusion 241 is solidified in the reflecting member disposing step so that the center of the first region 17 is solidified. glued to the part.

In the light-emitting device 117, the projection 241 is arranged in the central portion of the first region 17, so that the brightness of the light emitted from the central portion of the first region 17 is improved, and the central portion and the outer edge of the first region 17 are improved. It is possible to suppress the occurrence of luminance unevenness between. Note that the protrusion 241 included in the light emitting device 117 has a conical shape, but may have a polygonal pyramid shape including a quadrangular pyramid shape. Here, the shape of a polygonal pyramid means a shape with rounded vertices, a shape that includes unevenness instead of a polygonal shape in which the planar shape of the outer edge is connected by straight lines, and a shape that includes unevenness on the side surface. including.

FIG. 31A is a plan view of a light emitting device 118 according to the eleventh embodiment, and FIG. 31B is a cross-sectional view taken along line FF shown in FIG. 31A.

The light emitting device 118 differs from the light emitting device 113 in having a substrate 250 instead of the substrate 10 . In the light emitting device 118, the same components as those of the light emitting device 113 are denoted by the same reference numerals, and descriptions thereof are omitted.

The board 250 differs from the board 10 in that it has a mounting board 251 instead of the mounting board 11 . The configurations and functions of the components of the substrate 250 other than the mounting substrate 251 are the same as the configurations and functions of the components of the substrate 10 to which the same reference numerals are assigned, so detailed descriptions thereof are omitted here.

The mounting board 251 differs from the mounting board 11 in that it has a first region 257 instead of the first region 17 . The configurations and functions of the components of the mounting substrate 251 other than the first region 257 are the same as the configurations and functions of the components of the mounting substrate 11 denoted by the same reference numerals, so detailed description thereof will be omitted here. The first region 257 differs from the first region 17 in that it is textured.

The method for manufacturing the light emitting device 118 is the same as the method for manufacturing the light emitting device 113 except that the mounting substrate 251 having the first region 257 textured is used, and thus detailed description thereof is omitted here. The texturing of the first region 257 is performed, for example, by etching while masking the region other than the light emitting region 57 of the mounting substrate 251 .

Since the first region 257 of the light emitting device 118 is textured, the light emitted from the sealing material 231 and incident on the first region 257 is diffused in the first region 257 and emitted to the outside.

FIG. 32A is a plan view of a light emitting device 119 according to the twelfth embodiment, and FIG. 32B is a cross-sectional view taken along line GG shown in FIG. 32A.

The light emitting device 119 has a sealing material 260 instead of the sealing material 231, and has a first LED chip 261, a second LED chip 262, and a third LED chip 263 instead of the LED chip 20. differ. In the light emitting device 119, the same components as those of the light emitting device 114 are denoted by the same reference numerals, and description thereof is omitted.

The encapsulant 260 differs from the encapsulant 231 in that it does not contain the fluorescent material 30 . The configuration and function of the encapsulant 260 are the same as those of the encapsulant 231, except that the encapsulant 260 does not contain the fluorescent material 30, so detailed description thereof will be omitted here. The encapsulant 260 is arranged to cover each of the first LED chip 261 , the second LED chip 262 and the third LED chip 263 .

The first LED chip 261, like the LED chip 20, is a semiconductor element that emits blue light with a wavelength range of 440 nm to 455 nm, and is labeled with letter "B" in FIG. 32A. The second LED chip 262 is a semiconductor element that emits green light and is made of an InGaN-based compound semiconductor or the like, emitting light in a wavelength range of 505 nm to 555 nm, and is labeled with letter "G" in FIG. 32A. The third LED chip 263 is a semiconductor element that emits red light and is formed of a GaAsP-based compound semiconductor or the like, emitting light in a wavelength range of 620 nm to 750 nm, and is labeled with the letter "R" in FIG. 32A.

The light emitted by the first LED chip 261 is an example of first light having a first wavelength, the light emitted by the second LED chip 262 is an example of second light having a second wavelength, and the third LED chip 263 is emitted. The light is an example of third light having a third wavelength.

The method for manufacturing the light emitting device 119 is the same as the method for manufacturing the light emitting device 114, except that the first LED chip 261, the second LED chip 262 and the third LED chip 263 are mounted instead of the LED chip 20, so a detailed description will be given here. are omitted.

In the light emitting device 119, since the first LED chip 261, the second LED chip 262 and the third LED chip 263 are not arranged in the visible first region 17, the first LED chip 261, the second LED chip 262 and the third LED chip 261 can be seen even during low luminance light emission. There is no risk that the 3LED chip 263 will be visually recognized as luminance unevenness.

Moreover, although the light emitting device 119 uses the mounting substrate 11 having the first region 17 which is a flat surface, a mounting substrate having the first region 17 textured may be used. Furthermore, in the light emitting device 119, both a mounting substrate having a textured first region 17 and a light guide material having a dimpled surface may be used.

33A is a plan view of the light emitting device 120 according to the thirteenth embodiment, and FIG. 33B is a cross-sectional view taken along line HH shown in FIG. 33A.

The light emitting device 120 differs from the light emitting device 114 in that it has a first encapsulant 271 , a second encapsulant 272 and a third encapsulant 273 instead of the encapsulant 231 . In the light emitting device 120, the same components as those of the light emitting device 114 are denoted by the same reference numerals, and descriptions thereof are omitted.

The first sealing material 271 is a synthetic resin such as silicone resin containing a phosphor such as YAG that absorbs blue light and emits yellow light. By sealing the LED chip 20 with the first sealing material 271 , green light is emitted from the first sealing material 271 by mixing blue light and yellow light. For this reason, in FIG. 33A, the letter "G" is attached to the LED chip 20 sealed with the first sealing material 271. As shown in FIG.

The second encapsulant 272 is a synthetic resin such as silicone resin containing a phosphor such as CaAlSiN ₃ that absorbs blue light and emits red light. By sealing the LED chip 20 with the second sealing material 272 , red light is mainly emitted from the second sealing material 272 . For that reason, in FIG. 33A, the letter "R" is attached to the LED chip 20 sealed with the second sealing material 272. As shown in FIG.

The third encapsulating material 273 is a synthetic resin such as silicone resin that does not contain a phosphor, and is used to 271 and the second sealing material 272 seal the LED chips 20 that are not sealed. Since the LED chip 20 sealed only with the third sealing material 273 emits blue light as it is, the letter "B" is attached in FIG. 33A for the sake of convenience.

The method for manufacturing the light-emitting device 120 is the same as that of the light-emitting device 114 except that the first sealing member 271 to the third sealing member 273 are arranged instead of the sealing member 231 in the fourth step of the manufacturing process of the light-emitting device 114. Since it is the same as the manufacturing method, detailed description is omitted here.

34A is a plan view of a light emitting device 121 according to the fourteenth embodiment, and FIG. 34B is a cross-sectional view taken along line II shown in FIG. 34A.

In the light emitting device 121, the LED chip 20 is mounted in the first region 17 in addition to the second region 18 around the first region 17, and the sealing material 281 and the shielding member 282 can be newly added. It differs from the light emitting device 113 . In the light emitting device 121, the same components as those of the light emitting device 113 are denoted by the same reference numerals, and descriptions thereof are omitted.

In the light emitting device 121 , the LED chip 20 is mounted on the first area 17 in addition to the second area 18 . Four LED chips 20 are mounted in the first region 17 .

A sealing material 281 is arranged to cover the four LED chips 20 mounted in the first region 17 . The sealing material 281 is made of the same material as the sealing material 231 and contains the same fluorescent material 30 as the fluorescent material contained in the sealing material 231 . The shielding member 282 is arranged above the light guide member 233 so as to cover the sealing member 281 that covers the four LED chips 20 . The material of the shielding member 282 is the same as that of the shielding member 236 used in the light-emitting device 116 shown in FIG. 30, and preferably has the same transmittance as the shielding member 236 . The location indicated by arrow H is a region inside the sealing material 281, and the light guide member 233 is also arranged in this location.

The method for manufacturing the light emitting device 121 includes mounting the LED chip 20 in the first region 17, arranging the sealing material 281 so as to cover the LED chip 20 mounted in the first region 17, After curing, the method for manufacturing the light emitting device 113 is the same as the method for manufacturing the light emitting device 113 except that the reflective material 282 is arranged so as to cover the sealing material 281, so detailed description thereof is omitted here. It is preferable that the light guide material 233 arranged at the location indicated by the arrow H be solidified separately from the light guide material 233 arranged outside the sealing material 281 .

In the light-emitting device 121 , the LED chip 20 is mounted in the first region 17 , so the central portion of the mounting region 17 can have a higher luminance than the light-emitting device 113 . In addition, in the light emitting device 121, the shielding member 282 is arranged so as to cover the LED chips 20 mounted in the first region 17, so that the LED chips 20 arranged in the first region 17 can be prevented even during light emission with low luminance. There is no risk of being visually recognized as luminance unevenness. In addition, in the light emitting device 121, the color of the fluorescent material contained in the sealing material 281 that seals the four LED chips 20 arranged in the first region 17 is shielded by the shielding member 282 when the light is turned off. It is not visible from the outside, and there is no possibility that the aesthetic appearance will be deteriorated.

In the light emitting devices 100 to 103 and 105 to 118 described above, the LED chip 20 that emits light of the first color, blue, is mounted. A chip and an LED chip that emits light of a second color different from the first color may be implemented.

In the light-emitting devices 100 to 121 described above, the first region 17 has a substantially rectangular planar shape, but the first region may have a polygonal (hexagonal, etc.) planar shape other than circular and rectangular. In addition, when the first region 17 has a circular planar shape, the sealing material and the reflector have a ring-shaped planar shape.

In the light-emitting devices 100 to 121, power is supplied to the light-emitting elements through a pair of electrodes, the anode electrode 13 and the cathode electrode 14, but power may be supplied to the light-emitting elements through two or more pairs of electrodes. .

In the light emitting devices 100 to 113, 115, 116, 118, and 121, the reflectors 32 and 232 emit blue light emitted from the LED chip 20 and the fluorescent material 30 contained in the sealing materials 31 and 231. almost impermeable to yellow light. However, a reflective material that partially transmits light may be used as long as the color of the fluorescent material is not visible from the outside.

In the light emitting devices 113 and 118, the surface of the diffusion layer 234 has a substantially uniform height over the entire surface. , may be spherical recesses.

35A is a plan view of a light emitting device 122 according to the fifteenth embodiment, and FIG. 35B is a cross-sectional view taken along line AA shown in FIG. 35A.

Compared with the light emitting device 114, the light emitting device 122 has a first group (12 pieces) of LED chips 20 circularly arranged in the second region 18 closer to the outer edge of the light guide member 333, and the first group The major difference is that the LED chips 20 of the second group (12 pieces) are arranged in a circle inside the LED chips 20 of . In addition, in the light emitting device 122, the same components as those of the light emitting device 114 are denoted by the same reference numerals, and descriptions thereof are omitted.

A first anode wiring 317 electrically connected to the first anode electrode 313 , a second anode wiring 318 electrically connected to the second anode electrode 314 , and an electrically connected to the first cathode electrode 315 . A first cathode wiring 319, a second cathode electrode 316, and a second cathode wiring 320 electrically connected to the second cathode electrode 316 are formed on the surface of the circuit board 312 with a conductive thin film such as copper. there is The LED chips 20 of the first group are connected in series between the first anode wiring 317 and the first cathode wiring 319 , and the LED chips 20 of the second group are connected in series between the second anode wiring 318 and the second cathode wiring 320 . there is

In the light emitting device 122 , the first group of LED chips 20 is sealed with a first sealing material 331 and the second group of LED chips 20 is sealed with a second sealing material 332 . The first encapsulant 331 is the same encapsulant as the second encapsulant 82 described in the light emitting device 110 described above. As a result, the first encapsulant 331 emits warm white light with a color temperature of 2700K. emitted. The second encapsulant 332 is the same encapsulant as the first encapsulant 81 described in the light emitting device 110 described above. Light is emitted.

By applying a predetermined first voltage between the first anode electrode 313 and the first cathode electrode 315 , warm white light is emitted from the first sealing material 331 , and the second anode electrode 314 and the second cathode electrode 316 are emitted. Cold white light is emitted from the second sealing material 332 by applying a predetermined second voltage between them. Therefore, by varying the voltage values of the first voltage and the second voltage, it is possible to change the chromaticity of the white light output from the light emitting device 122, in other words, to adjust the color.

The light emitting device 122 has a light guide member 333 , a frame member 335 , a shielding member 336 and a diffusion layer 337 like the light emitting device 114 . The materials and functions of the light guide member 333, the frame member 335, the shielding member 336, and the diffusion layer 337 in the light emitting device 122 are the same as those of the light guide member 233, the frame member 235, the shield member 236, and the diffusion layer 337 shown in the light emitting device 114. Since it is the same as the layer 227 (only the shape is different), the description is omitted.

In the light emitting device 122 , the frame member 335 and the shielding member 336 serve as the reflector 232 of the light emitting device 113 . That is, the frame member 335 and the shielding member 336 are arranged above the first sealing member 331 and the second sealing member 332 and on the side opposite to the first region 17 to form the first sealing member 331 and the second sealing member 331 . The light emitted from the stop member 332 is reflected, and the reflected light is led to the light guide member 333 side).

Further, in the light emitting device 122, part of the light emitted from the first sealing member 331 and the second sealing member 332 passes through the shielding member 336 and is emitted from the light emitting device 122 to the outside through the diffusion layer 337. Therefore, it is possible to prevent a dark portion from being generated above the shielding member 336, thereby preventing luminance unevenness from occurring. It should be noted that the transmittance of the shielding member 336 is preferably 30% or more and 70% or less. Therefore, when the light-emitting device 122 is turned off, the color of the fluorescent material is not visible from the outside, and there is no possibility that the aesthetic appearance will deteriorate.

In the light emitting device 122, the first sealing member 331 emitting warm white light is arranged outside the second sealing member 332 emitting cold white light. absorbs the light emitted from the second encapsulant 332 and suppresses secondary absorption, thereby improving the efficiency of the entire device.

In the manufacturing process of the light emitting device 114, the method of manufacturing the light emitting device 122 is such that two groups of LED chips arranged doubly are sealed with two types of sealing materials, and each of the two groups of LED chips is connected to a predetermined wiring. Since it is almost the same except for connecting to the electrode, detailed description will be omitted.

36A is a plan view of a light emitting device 123 according to the sixteenth embodiment, and FIG. 36B is a cross-sectional view taken along line BB shown in FIG. 36A.

The light-emitting device 123 is significantly different from the light-emitting device 122 in that the LED chips 20 of the first group and the LED chips 20 of the second group are sealed with a sealing material. In addition, in the light emitting device 123, the same components as those of the light emitting device 122 are denoted by the same reference numerals, and descriptions thereof are omitted.

In the light emitting device 123 , the first group (12 pieces) of the LED chips 20 are circularly arranged in the second region 18 close to the outer edge of the light guide member 333 , and the first group of LED chips 20 are arranged inside the first group of LED chips 20 . Two groups (12 pieces) of LED chips 20 are arranged in a circle, which is the same as the light emitting device 122 . However, the LED chips 20 of the first group and the LED chips 20 of the second group are entirely sealed by the second sealing material 342, and the first sealing material 341 is arranged only on the upper surface of the LED chips 20 of the first group. The difference is that

In the light-emitting device 123, the first sealing material 341 is the same sealing material as the second sealing material 82 described in the light-emitting device 110 described above. Warm white light is emitted. The second encapsulant 342 is the same encapsulant as the first encapsulant 81 described in the light emitting device 110 described above, and the second encapsulant 342 emits cold white light with a color temperature of 6500K. be done. In FIG. 36A , “W” is attached to the location where the first sealing material 341 is arranged for convenience.

By applying a predetermined first voltage between the first anode electrode 313 and the first cathode electrode 315 , warm white light is emitted from the first sealing material 341 , and the second anode electrode 314 and the second cathode electrode 316 are emitted. Cold white light is emitted from the second sealing material 342 by applying a predetermined second voltage between them. Therefore, by varying the voltage values of the first voltage and the second voltage, it is possible to change the chromaticity of the white light output from the light emitting device 123, in other words, to adjust the color.

In the light-emitting device 123, the frame member 335 and the shielding member 336 are arranged above the first sealing member 341 and the second sealing member 342 and on the side opposite to the first region 17. It reflects the light emitted from the second sealing member 342 and guides the reflected light to the light guide member 333 side.

Further, in the light emitting device 123, part of the light emitted from the first sealing member 341 and the second sealing member 342 passes through the shielding member 336 and is emitted from the light emitting device 123 to the outside through the diffusion layer 337. Therefore, it is possible to prevent a dark portion from being generated above the shielding member 336, thereby preventing luminance unevenness from occurring. It should be noted that the transmittance of the shielding member 336 is preferably 30% or more and 70% or less. Therefore, when the light-emitting device 123 is turned off, the color of the fluorescent material is not visible from the outside, and there is no possibility that the aesthetic appearance will deteriorate.

Furthermore, in the light emitting device 123, the first group of LED chips 20 and the second group of LED chips 20 can be alternately arranged close to the outer edge of the light guide member 333, so that warm white light and cool color light can be obtained. It is possible to improve the color mixing with the white light of the system.

In the manufacturing process of the light emitting device 114, the method for manufacturing the light emitting device 123 is such that two groups of LED chips arranged doubly are sealed with two types of sealing materials, and each of the two groups of LED chips is connected to a predetermined wiring. Since it is almost the same except for connecting to the electrode, detailed description will be omitted.

FIG. 37A is a plan view of a light emitting device 124 according to the seventeenth embodiment, and FIG. 37B is a cross-sectional view taken along line CC shown in FIG. 37A.

The light emitting device 124 differs from the light emitting device 114 in that it has a frame member 350 instead of the frame member 235 and the shielding member 236 and has a diffusion layer 251 instead of the diffusion layer 237 . In the light emitting device 124, the same components as those of the light emitting device 114 are denoted by the same reference numerals, and description thereof is omitted.

Like the reflector 232, the frame member 350 is individually manufactured as a molded product from a material capable of reflecting the light emitted from the sealing member 231, has a pencil hardness of B or more, and is adhered (not shown). It is bonded to the substrate 10 with a material.

The diffusion layer 351 is made of the same material as the diffusion layer 237 of the light emitting device 114 .

In the light-emitting device 124, the frame member 350 is arranged so as to cover the upper side of the sealing material 231 and the side opposite to the first region 17, and reflects the light emitted from the sealing material 231 to reduce the reflected light. It is guided to the light guide member 233 side.

In the method for manufacturing the light emitting device 124, after steps 1 to 5 for manufacturing the light emitting device 113 shown in FIGS. It is completed by forming a diffusion layer 351 between the material 233 and the material 233 .

Since the first region 17 of the light emitting device 124 is surrounded by the frame member 350 that reflects the first light and the second light, the first light and the second light can be efficiently emitted above the first region 17. .

In addition, in the light emitting device 124, since the upper side of the sealing material 233 is covered with the frame member 350, the color of the fluorescent material is not visible from the outside when the light is turned off, and there is no possibility that the appearance will deteriorate.

In addition, since the frame member 350 of the molded product is used in the light emitting device 124, it is possible to provide a flat portion on the upper portion of the frame resin 350. Advantages include ease of connection and/or positioning. Furthermore, since the light emitting device 124 uses the frame member 350 of the molded product, it is robust as a device, and even if the user touches the upper portion, the wire 21 connecting the LED chip 20 or the like will not break. low fear.

38A is a plan view of a light emitting device 125 according to the eighteenth embodiment, and FIG. 38B is a cross-sectional view taken along line DD shown in FIG. 38A.

The light emitting device 125 differs from the light emitting device 114 in that a μLED chip 360 is arranged in the first region 17 . In the light emitting device 125, the same components as those of the light emitting device 114 are denoted by the same reference numerals, and description thereof is omitted.

The μLED chip 360 is a semiconductor element similar to the LED chip 20, but the vertical and horizontal external dimensions of the LED chip 20 are about 650 μm×650 μm, whereas the vertical and horizontal external dimensions are about 50 μm×50 μm, which is very small. . Although not shown in FIG. 38A, each μLED chip 360 is connected to anode wiring 15 and cathode wiring 16 by wires 21 . In addition, FIG. 38A is not limited to the nine μLED chips 360, and can be used for luminance unevenness correction by arranging them at locations where luminance unevenness is likely to occur. Also, the color emitted by the μLED chip 360 is not limited to blue light, and μLED chips with various emission colors can be used.

The manufacturing method of the light emitting device 125 is the same as the manufacturing process of the light emitting device 113, and the μLED chip 360 may be arranged at the same timing as the LED chip 20 and connected by a wire.

Further, in the light-emitting device 125, since the μLED chip 360 itself does not require a fluorescent material to emit light, the color of the fluorescent material is not visible from the outside when the light-emitting device 114 is turned off.

FIG. 39A is a plan view of a light emitting device 126 according to the nineteenth embodiment, and FIG. 39B is a cross-sectional view taken along line EE shown in FIG. 39A.

The light-emitting device 126 differs greatly from the light-emitting device 124 in that the substrate 410 has an elongated rectangular shape and the LED chips are arranged in a line along the longitudinal direction of the substrate 410 . In addition, in the light emitting device 126, the same components as those of the light emitting device 114 are denoted by the same reference numerals, and descriptions thereof are omitted.

In the light emitting device 126 , a plurality of LED chips 20 are arranged in a line in the second region 18 in close proximity to the outer edge along the longitudinal direction of the light guide member 433 . A plurality of LED chips 20 arranged in a line are connected in series between anode wiring 415 electrically connected to anode electrode 413 and cathode wiring 416 electrically connected to cathode electrode 414 .

The light emitting device 126 has a sealing material 431 , a light guide material 433 , a frame member 435 , a shielding member 436 and a diffusion layer 437 . The materials and functions of the sealing material 431 , the light guiding material 433 , the frame member 435 , the shielding member 436 , and the diffusion layer 437 in the light emitting device 126 are the same as those of the sealing material 231 , the light guiding material 233 , the frame member 437 shown in the light emitting device 114 . Since it is the same as the member 235, the shielding member 236, and the diffusion layer 237 (only the shape is different), the description is omitted.

In the light-emitting device 126, the frame member 435 and the shielding member 436 are arranged above the sealing material 431 and on the side opposite to the first region 17, and reflect the light emitted from the sealing material 431 to produce the reflected light. is led to the light guide member 433 side.

In addition, in the light emitting device 126 , part of the light emitted from the sealing material 431 is transmitted through the shielding member 436 and emitted from the light emitting device 126 to the outside via the diffusion layer 437 . It is possible to prevent the occurrence of luminance unevenness due to the occurrence of dark portions in the image. It should be noted that the transmittance of the shielding member 436 is preferably 30% or more and 70% or less. Therefore, when the light-emitting device 126 is turned off, the color of the fluorescent material is not visible from the outside, and there is no possibility that the appearance will deteriorate.

The manufacturing method of the light emitting device 126 is the same as the manufacturing process of the light emitting device 114 except that the shape of the substrate 410 is different, so detailed description thereof will be omitted.

40A is a plan view showing an example of the top emitting SMD 150, FIG. 40B is a right side view of FIG. 40A, and FIG. 40C is a rear view of FIG. 40A. The top emitting SMD 150 is an example of an LED package and can be used in place of the LED chip 20 in the light emitting devices 100-126 described above.

In the top emission SMD 150 , an anode wiring 515 and a cathode wiring 516 arranged on a substrate 510 are connected to the LED chip 20 by wires 21 . Anode wiring 515 is electrically connected to anode electrode 513 arranged on the back surface of substrate 510 by via 517 . Also, the cathode wiring 516 is electrically connected to the cathode electrode 514 arranged on the back surface of the substrate 510 through vias 518 .

A frame member 535 is arranged on the upper surface of the substrate 510 , and a sealing material 531 is arranged inside thereof so as to seal the LED chip 20 and the wires 21 . The sealing material 531 and the frame member 535 are made of the same material as the sealing material 231 and the frame member 235 of the light emitting device 114 .

The top emitting SMD 150 is connected to, for example, the anode wiring 15 and the cathode wiring 16 of the light emitting device 114 via the anode electrode 513 and the cathode electrode 514 on the back surface (see FIG. 40C), and is supplied with a predetermined current, thereby (See FIG. 40A) emits light of a predetermined wavelength.

The vertical, horizontal, and height dimensions of the top-emitting SMD 150 are, for example, 1.5×1.5×0.5 mm, but the size is not limited to this.

41A is a plan view showing an example of the side emitting SMD 151, FIG. 41B is a right side view of FIG. 41A, and FIG. 41C is a rear view of FIG. 41A. The side emitting SMD 151 is an example of an LED package, and can be used in place of the LED chip 20 in the light emitting devices 100 to 126 described above. In the side emitting SMD 151, the same numbers are assigned to the same configurations as in the top emitting SMD 150, and the description thereof is omitted.

In the side emission SMD 151 , an anode wiring 515 and a cathode wiring 516 arranged on a substrate 510 are connected to the LED chip 20 by wires 21 . Anode wiring 515 is electrically connected to anode electrode 523 arranged on the back surface of substrate 510 by via 517 . Also, the cathode wiring 516 is electrically connected to a cathode electrode 524 arranged on the back surface of the substrate 510 through a via 518 .

A frame member 535 is arranged on the upper surface of the substrate 510 , and a sealing material 531 is arranged inside thereof so as to seal the LED chip 20 and the wires 21 . The sealing material 531 and the frame member 535 are made of the same material as the sealing material 231 and the frame member 235 of the light emitting device 114 .

The side emitting SMD 151 is configured such that, for example, the anode wiring 15 and the cathode of the light emitting device 114 are connected to the side surface (arrow F side in FIG. 41B) by the anode electrode 523 and the cathode electrode 524 extending from the back surface (see FIG. 41C) to the side surface side. When connected to wiring 16 and supplied with a predetermined current, light with a predetermined wavelength is emitted from the upper surface side (see FIG. 41A).

The external dimensions of the side emitting SMD 151 in length, width and height are, for example, 0.8×1.5×0.8 mm, but the size is not limited to this.

FIG. 42 is a diagram showing an example in which the light emitting device 113 is applied to a lighting device 600. FIG.

The lighting device 600 has a light emitting device 113 and a lens 601 . The lens 601 is an axisymmetric bowl-shaped collimator lens, and the light emitting device 100 is arranged such that the light emitting region of the light emitting device 100 is positioned in the depression 602 . A reflecting surface 603, which is the outer surface of the lens 601, has a shape of a body of revolution obtained by rotating a parabola. The lens 601 reflects the light emitted from the light emitting device 100 on the reflecting surface 603 and emits it from the emitting surface 604 . Note that other light emitting devices 101 to 112 and 114 to 126 can also be applied to the illumination device 600. FIG.

43A shows an example in which the light emitting device 700 according to the comparative example is used as the lighting device 600, and FIG. 43B shows an example in which the light emitting device 100 is used as the lighting device 600. FIG. Both FIGS. 43A and 43B assume a case where the user looks into from the exit surface 604 side of lighting device 600 .

A light emitting device 700 according to a comparative example is a device in which a sealing member 231 containing an LED chip 20 and a fluorescent material 30 is arranged in the first region 17 instead of the light guide member 233 in the light emitting device 113. and Therefore, the light emitting device 700 is configured such that the color of the fluorescent material can be seen from above when the light is turned off.

As shown in FIG. 43A , while the light emitting device 700 is turned off, the color of the encapsulant containing the fluorescent material present in the first region of the light emitting device 700 is reflected on the reflective surface 603 of the lens 601 of the lighting device 600 . The light is reflected, and the color of the phosphor is visible over the entire surface of the lens 601, which degrades aesthetics.

On the other hand, as shown in FIG. 43B, in the light-emitting device 113, the sealing material containing the fluorescent material is arranged with the reflector 232 so that it is not visible from above. The phosphor color is not visible across the entire lens 601 of the device 600 .

Further, since the light-emitting device 113 according to the embodiment has a large area, when the lighting device 600 is manufactured by mounting the lens 601 on the light-emitting device 113, lateral displacement may occur between the light-emitting device 113 and the lens 601. However, there is a low possibility that the brightness will decrease.

Claims (20)

a substrate having a first region and a second region arranged around the first region;
a plurality of light emitting elements mounted on the substrate so as to surround the first region in the second region and not mounted on the substrate in the first region;
a sealing material arranged on the substrate so as to cover the plurality of light emitting elements;
a reflective material disposed on the upper side of the sealing material and on the side opposite to the first region;
a light guide member having an upper surface and arranged in the first region so as to face a side surface of the sealing member on the first region side;
The sealing material contains a fluorescent material that converts the wavelength of light emitted from the plurality of light emitting elements and emits light of different wavelengths,
The reflective material and the light guide material do not contain the fluorescent material,
A light-emitting device characterized by: The encapsulant is a first fluorescent material that wavelength-converts the light emitted from the plurality of light emitting elements and emits light having a second wavelength different from the light having the first wavelength emitted from the plurality of light emitting elements. and wavelength-converting the light emitted from the plurality of light emitting elements to obtain light of a third wavelength different from the light of the first wavelength emitted from the plurality of light emitting elements a second encapsulant containing a second fluorescent material that emits,
2. The light emitting device according to claim 1, wherein each of said first sealing material and said second sealing material seals one of said plurality of light emitting elements. The plurality of light emitting elements are arranged in a first group of light emitting elements arranged close to the outer edge of the light guide member, and on the side opposite to the first region side of the first group of light emitting elements. a second group of light emitting elements,
3. The light-emitting device according to claim 2, wherein the first sealing material seals the first group of light emitting elements, and the second sealing material seals the second group of light emitting elements. The first sealing material seals all of the plurality of light emitting elements,
4. The light-emitting device according to claim 2, wherein said second sealing material seals only part of said plurality of light-emitting elements. The encapsulant further includes a third encapsulant that does not contain a fluorescent material,
The third sealing material is not sealed by the first sealing material, the second sealing material, or the first sealing material and the second sealing material among the plurality of light emitting elements. 5. The light-emitting device according to claim 2, wherein the light-emitting element is sealed. the first region has a circular or polygonal shape,
the top surface of the light guide member has the same outer shape as the first region,
The light emitting device according to any one of claims 1 to 5, wherein the plurality of light emitting elements are arranged along the outer edge of the light guide member. the substrate has a rectangular shape,
6. The light-emitting device according to claim 1, wherein some of said plurality of light-emitting elements are arranged in a line along the longitudinal direction of said substrate. 8. The light guide according to any one of claims 1 to 7, wherein the height of the light guide from the substrate surface is set so as to gradually decrease from the central portion toward the outer edge of the light guide. A light emitting device as described. The light emitting device according to any one of claims 1 to 8, wherein the top surface of the light guide is dimpled. 10. The light emitting device according to claim 9, further comprising a low refractive index layer disposed above said top surface of said light guide and having a lower refractive index than said light guide. The light emitting device according to any one of claims 1 to 10, wherein a dot-shaped resin is arranged on the upper surface of the light guide member. 12. The light-emitting device according to claim 1, wherein said reflector is arranged so as to shield said sealing member when said substrate is viewed from above. The reflective material includes a frame member arranged along the outer edge of the sealing material and a shielding member arranged above the sealing material,
13. The light emitting device according to claim 1, wherein the height of said frame member from said substrate surface is set to be higher than the height of said light guide member from said substrate surface. The light-emitting device according to any one of claims 1 to 13, wherein the reflector is a pre-molded resin member. 15. The light guide member according to any one of claims 1 to 14, further comprising a diffusion layer disposed above the upper surface of the light guide member and containing a diffusion material for diffusing light emitted from the upper surface and containing no fluorescent material. The light-emitting device according to . 16. The light-emitting device according to claim 15, wherein the diffusion layer has a central thickness that is thinner than an outer edge of the diffusion layer. 17. The light-emitting device according to claim 15, wherein the height of said diffusion layer surface from said substrate surface is set so as to gradually increase from a central portion of said diffusion layer toward an outer edge thereof. further comprising a circuit board disposed on the substrate and having electrodes and openings electrically connected to the plurality of light emitting elements;
The light-emitting device according to any one of claims 1 to 17, wherein the plurality of light-emitting elements are mounted on the substrate inside the opening. The light emitting device according to any one of claims 1 to 18, wherein the surface of the substrate is textured in the first region. 19. The light-emitting device according to claim 1, wherein in the first region, a projection that reflects light emitted from the encapsulant is arranged on the surface of the substrate.

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