JP7169857B2 - SUBSTRATE PROCESSING APPARATUS AND SUBSTRATE PROCESSING METHOD - Google Patents

Description

The present disclosure relates to a substrate processing apparatus and a substrate processing method.

Conventionally, as a technique for removing moisture remaining on the surface of a substrate while suppressing pattern collapse, a supercritical drying technique for drying the substrate using a supercritical fluid obtained under high pressure is known.

JP 2011-009299 A

The present disclosure provides a technique capable of improving the efficiency of supercritical drying.

A substrate processing apparatus according to one aspect of the present disclosure is a substrate processing apparatus that performs a drying process of drying a substrate using a processing fluid in a supercritical state, and includes a processing container and a plurality of holding units. A processing container is a container in which a drying process is performed. The plurality of holding units hold different substrates inside the processing container.

According to the present disclosure, it is possible to improve the efficiency of the supercritical drying process.

FIG. 1 is a schematic cross-sectional view of the substrate processing system according to the first embodiment viewed from above. FIG. 2 is a flow chart showing a series of substrate processing procedures executed in the substrate processing system according to the first embodiment. FIG. 3 is a diagram showing a configuration example of a liquid processing unit. FIG. 4 is a schematic cross-sectional view showing the configuration of the drying unit according to the first embodiment. FIG. 5 is a schematic cross-sectional view showing an example of a state in which a plurality of wafers are housed inside the processing container. FIG. 6 is a schematic cross-sectional view showing an example of a flow path of the processing fluid in the processing space. FIG. 7 is a schematic cross-sectional view showing the configuration of a drying unit according to the second embodiment. FIG. 8 is a schematic cross-sectional view showing the configuration of a drying unit according to the third embodiment. FIG. 9 is a schematic cross-sectional view showing the configuration of a drying unit according to the fourth embodiment. FIG. 10 is a schematic cross-sectional view showing the configuration of a drying unit according to the fifth embodiment. FIG. 11 is a schematic cross-sectional view showing the configuration of a drying unit according to the sixth embodiment. FIG. 12 is a schematic plan view showing the configuration of a holding portion according to the sixth embodiment. FIG. 13 is a schematic cross-sectional view showing the configuration of a drying unit according to the seventh embodiment.

Embodiments for implementing the substrate processing apparatus and substrate processing method according to the present disclosure (hereinafter referred to as "embodiments") will be described in detail below with reference to the drawings. The substrate processing apparatus and substrate processing method according to the present disclosure are not limited to this embodiment. Further, each embodiment can be appropriately combined within a range that does not contradict the processing contents. Also, in each of the following embodiments, the same parts are denoted by the same reference numerals, and overlapping descriptions are omitted.

(First embodiment)
[1. Configuration of substrate processing system]
First, the configuration of the substrate processing system according to the embodiment will be described with reference to FIG. FIG. 1 is a schematic cross-sectional view of the substrate processing system according to the first embodiment viewed from above. In the following, to clarify the positional relationship, the X-axis, Y-axis and Z-axis are defined to be orthogonal to each other, and the positive direction of the Z-axis is defined as the vertically upward direction.

As shown in FIG. 1, the substrate processing system 1 includes a loading/unloading station 2 and a processing station 3 . The loading/unloading station 2 and the processing station 3 are provided adjacently.

(Regarding loading/unloading station 2)
The loading/unloading station 2 includes a carrier placement section 11 and a transport section 12 . A plurality of carriers C accommodating a plurality of semiconductor wafers (hereinafter referred to as “wafers W”) in a horizontal state are mounted on the carrier mounting portion 11 .

The transport section 12 is provided adjacent to the carrier mounting section 11 . A transport device 13 and a delivery unit 14 are arranged inside the transport unit 12 .

The transfer device 13 includes a wafer holding mechanism that holds the wafer W. As shown in FIG. In addition, the transfer device 13 can move in the horizontal direction and the vertical direction and can rotate around the vertical axis, and transfers the wafer W between the carrier C and the transfer section 14 using the wafer holding mechanism. .

(Regarding processing station 3)
The processing station 3 is provided adjacent to the transport section 12 . The processing station 3 includes a transport block 4 and a plurality (here, two) of processing blocks 5_1 and 5_2.

(Regarding transport block 4)
The transport block 4 includes a transport area 15 and a transport device 16 . The transport area 15 is, for example, a rectangular parallelepiped area extending along the direction in which the loading/unloading stations 2 and the processing stations 3 are arranged (the X-axis direction).

A transport device 16 is arranged in the transport area 15 . The transfer device 16 includes a wafer holding mechanism that holds the wafer W. As shown in FIG. In addition, the transport device 16 can move in the horizontal direction and the vertical direction, and can rotate about the vertical axis. Carry out transportation.

The processing blocks 5_1 and 5_2 are arranged adjacent to the transport area 15 on both sides of the transport area 15 . Specifically, the processing block 5_1 is located on one side (Y-axis positive direction side) of the transport area 15 in the direction (Y-axis direction) orthogonal to the direction (X-axis direction) in which the loading/unloading stations 2 and the processing stations 3 are arranged. , and the processing block 5_2 is arranged on the other side (Y-axis negative direction side).

The processing block 5_1 includes a plurality (here, two) of liquid processing units 17a and 17b, a drying unit 18_1, and a supply unit 19_1. The processing block 5_2 also includes a plurality of (here, two) liquid processing units 17c and 17d, a drying unit 18_2, and a supply unit 19_2.

In the following, when the processing blocks 5_1 and 5_2 are not distinguished, they may be collectively referred to as "processing block 5". Similarly, the liquid processing units 17a to 17d are collectively referred to as "liquid processing unit 17", the drying units 18_1 and 18_2 are collectively referred to as "drying unit 18", and the supply units 19_1 and 19_2 are collectively referred to as "supply unit 19". may be described.

The liquid processing unit 17 performs a cleaning process for cleaning the upper surface of the wafer W, which is the pattern forming surface. Further, the liquid processing unit 17 performs a liquid film forming process for forming a liquid film on the upper surface of the wafer W after the cleaning process. The configuration of the liquid processing unit 17 will be described later.

The drying unit 18 performs a supercritical drying process on the wafer W after the liquid film forming process. Specifically, the drying unit 18 dries the wafer W after the liquid film forming process by bringing the wafer W into contact with the processing fluid in a supercritical state. The configuration of the drying unit 18 will be described later.

The supply unit 19 supplies treatment fluid to the drying unit 18 . Specifically, the supply unit 19 includes a supply device group including a flow meter, a flow regulator, a back pressure valve, a heater, and the like, and a housing that accommodates the supply device group. In a first embodiment, supply unit 19 supplies CO2 to drying unit 18 as the treatment fluid.

In each processing block 5, a plurality of liquid processing units 17, drying units 18, and supply units 19 are arranged along the transport area 15 (that is, along the X-axis direction). Of the liquid processing unit 17, the drying unit 18, and the supply unit 19, the liquid processing unit 17 is arranged closest to the carry-in/out station 2, and the supply unit 19 is arranged farthest from the carry-in/out station 2. .

The drying unit 18_1 includes a processing area 181a in which supercritical drying processing is performed, and a plurality of (here, two) delivery areas 182a and 182b in which wafers W are delivered between the transfer block 4 and the processing area 181a. and In the first embodiment, the processing area 181a and the plurality of delivery areas 182a, 182b are arranged along the transport area 15. As shown in FIG. Specifically, the plurality of delivery areas 182a and 182b are arranged on both sides of the processing area 181a in the X-axis direction, that is, on the X-axis negative direction side and the X-axis positive direction side of the processing area 181a.

Similarly, the drying unit 18_2 includes a processing area 181b where supercritical drying processing is performed, and a plurality of (here, two) delivery areas where wafers W are delivered between the transfer block 4 and the processing area 181b. 182c and 182d. In the first embodiment, the processing area 181b and the plurality of delivery areas 182c and 182d are arranged along the transport area 15. As shown in FIG. Specifically, the plurality of delivery areas 182c and 182d are arranged on both sides of the processing area 181b in the X-axis direction, that is, on the X-axis negative direction side and the X-axis positive direction side of the processing area 181b.

In the following, when the drying units 18_1 and 18_2 are not distinguished, they may be collectively referred to as "drying unit 18". Similarly, the processing areas 181a and 181b may be collectively referred to as "processing area 181", and the delivery areas 182a to 182d may be generically referred to as "delivery area 182".

(Regarding the control device 6)
The substrate processing system 1 includes a control device 6 . Control device 6 is, for example, a computer, and includes control section 61 and storage section 62 .

The control unit 61 includes a microcomputer having a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), an input/output port, and various circuits. The CPU of the microcomputer reads out and executes programs stored in the ROM, thereby realizing control of the conveying devices 13 and 16, the liquid processing unit 17, the drying unit 18, the supply unit 19, and the like.

The program may be recorded in a computer-readable recording medium and installed in the storage unit 62 of the control device 6 from the recording medium. Examples of computer-readable recording media include hard disks (HD), flexible disks (FD), compact disks (CD), magnet optical disks (MO), and memory cards.

The storage unit 62 is implemented by, for example, a semiconductor memory device such as a RAM or flash memory, or a storage device such as a hard disk or an optical disk.

[2. Substrate processing flow]
Next, the flow of a series of substrate processing in the substrate processing system 1 described above will be described with reference to FIGS. 2 and 3. FIG. FIG. 2 is a flow chart showing a series of substrate processing procedures executed in the substrate processing system 1 according to the first embodiment. A series of substrate processes shown in FIG. 2 are executed under the control of the controller 61 .

As shown in FIG. 2, in the substrate processing system 1, loading processing is first performed (step S101). In the carrying-in process, the transfer device 13 (see FIG. 1) takes out the wafer W from the carrier C and places it on the delivery section 14 . Subsequently, the transfer device 16 (see FIG. 1) takes out the wafer W from the delivery section 14 and carries it into the liquid processing unit 17 .

Subsequently, in the substrate processing system 1, cleaning processing is performed in the liquid processing unit 17 (step S102). The liquid processing unit 17 removes particles, natural oxide films, etc. from the upper surface of the wafer W by supplying various processing liquids to the upper surface of the wafer W, which is the pattern forming surface.

Subsequently, in the substrate processing system 1, the liquid film forming process is performed in the liquid processing unit 17 (step S103). The liquid processing unit 17 forms a liquid film of the IPA liquid on the upper surface of the wafer W by supplying liquid IPA (hereinafter referred to as “IPA liquid”) to the upper surface of the wafer W after the cleaning process.

After the liquid film formation process, the wafer W is transported by the transport device 16 to the delivery area 182 of the drying unit 18 arranged in the same processing block 5 and then transported from the delivery area 182 to the processing area 181 . After that, in the substrate processing system 1, a supercritical drying process is performed in the processing area 181 (step S104). In the supercritical drying process, the drying unit 18 dries the wafer W after the liquid film forming process by bringing the wafer W after the liquid film forming process into contact with the process fluid in the supercritical state.

In the first embodiment, the drying unit 18 performs supercritical drying on two wafers W at the same time. Specifically, the transfer device 16 transports the wafer W after the liquid film forming process from one liquid processing unit 17a of the two liquid processing units 17a and 17b arranged in one processing block 5, for example, the processing block 5_1. take out. Then, the transfer device 16 transfers the wafer W taken out from the liquid processing unit 17a to one of the two transfer areas 182a and 182b of the drying unit 18_1 arranged in the same processing block 5_1. . Further, the transfer device 16 takes out the wafer W after the liquid film forming process from the other liquid processing unit 17b of the two liquid processing units 17a and 17b arranged in the processing block 5_1. Then, the transport device 16 transports the wafer W taken out from the liquid processing unit 17b to the other delivery area 182b of the two delivery areas 182a and 182b provided in the drying unit 18_1. After that, the two wafers W are transferred from the transfer areas 182a and 182b to the processing area 181, where they are subjected to supercritical drying.

Note that the transfer device 16 may first transfer the wafer W taken out from the liquid processing unit 17a arranged on the X-axis negative direction side to the delivery area 182b arranged on the X-axis positive direction side. Further, the transfer device 16 may then transfer the wafer W taken out from the liquid processing unit 17b arranged on the X-axis positive direction side to the transfer area 182a arranged on the X-axis negative direction side. In the first embodiment, two wafers W have different waiting times in the transfer areas 182a and 182b. This difference in waiting time can be absorbed.

Subsequently, in the substrate processing system 1, unloading processing is performed (step S105). In the unloading process, first, the wafer W after the supercritical drying process is transported from the processing area 181 to the delivery area 182 . After that, the transfer device 16 takes out the wafer W after the supercritical drying process from the transfer area 182 and transfers it to the transfer section 14 . After that, the transfer device 13 takes out the wafer W after the supercritical drying process from the transfer section 14 and transfers it to the carrier C. As shown in FIG.

[3. Configuration of liquid processing unit]
Next, the configuration of the liquid processing unit 17 will be described with reference to FIG. FIG. 3 is a diagram showing a configuration example of the liquid processing unit 17. As shown in FIG. The liquid processing unit 17 is configured, for example, as a single-wafer cleaning apparatus that cleans the wafers W one by one by spin cleaning.

As shown in FIG. 3, the liquid processing unit 17 holds a wafer W substantially horizontally by a wafer holding mechanism 25 arranged in an outer chamber 23 forming a processing space, and rotates the wafer holding mechanism 25 around a vertical axis. , the wafer W is rotated. The liquid processing unit 17 advances the nozzle arm 26 above the rotating wafer W, and supplies the chemical liquid and the rinse liquid from the chemical liquid nozzle 26a provided at the tip of the nozzle arm 26 in a predetermined order. , the upper surface of the wafer W is cleaned.

In the liquid processing unit 17, a chemical liquid supply path 25a is also formed inside the wafer holding mechanism 25. As shown in FIG. Then, the lower surface of the wafer W is also cleaned by the chemical liquid and the rinsing liquid supplied from the chemical liquid supply path 25a.

In the cleaning process, for example, particles and organic contaminants are first removed with an SC1 solution (a mixture of ammonia and hydrogen peroxide), which is an alkaline chemical, and then deionized water, which is a rinse. (Deionized Water: hereinafter referred to as “DIW”) is used for rinsing. Next, the natural oxide film is removed with a dilute hydrofluoric acid solution (hereinafter referred to as "DHF"), which is an acidic chemical solution, and then rinse cleaning with DIW is performed.

The various chemical solutions described above are received by the outer chamber 23 and the inner cup 24 arranged in the outer chamber 23, and are received by a drainage port 23a provided at the bottom of the outer chamber 23 and a drain provided at the bottom of the inner cup 24. It is discharged from the liquid port 24a. Further, the atmosphere in the outer chamber 23 is exhausted from an exhaust port 23b provided at the bottom of the outer chamber 23. As shown in FIG.

The liquid film forming process is performed after the rinse process in the cleaning process. Specifically, the liquid processing unit 17 supplies the IPA liquid to the upper and lower surfaces of the wafer W while rotating the wafer holding mechanism 25 . As a result, DIW remaining on both surfaces of the wafer W is replaced with IPA. After that, the liquid processing unit 17 gently stops the rotation of the wafer holding mechanism 25 .

After the liquid film formation process, the wafer W is transferred to the transfer device 16 by a transfer mechanism (not shown) provided in the wafer holding mechanism 25 while the liquid film of the IPA liquid is formed on the upper surface of the wafer W. It is carried out from the processing unit 17 . The liquid film formed on the wafer W is formed when the liquid on the upper surface of the wafer W evaporates (vaporizes) while the wafer W is being transported from the liquid processing unit 17 to the drying unit 18 or being loaded into the drying unit 18 . to prevent pattern collapse from occurring.

[4. Configuration of drying unit]
Next, the configuration of the drying unit 18 will be described with reference to FIGS. 4 and 5. FIG. FIG. 4 is a schematic cross-sectional view showing the configuration of the drying unit 18 according to the first embodiment. Moreover, FIG. 5 is a schematic cross-sectional view showing an example of a state in which a plurality of wafers W are accommodated inside the processing container.

As shown in FIGS. 4 and 5, the drying unit 18 includes a processing container 31, multiple lids 32a and 32b, and multiple holders 33a and 33b.

The processing vessel 31 is a pressure vessel capable of forming a high-pressure environment of, for example, approximately 16-20 MPa. The processing container 31 is arranged in the processing area 181 (see FIG. 1), and the supercritical drying process is performed in the processing space 311 inside the processing container 31 .

The processing container 31 has a rectangular shape in a plan view, and has openings 312 a and 312 b on two side faces facing the transfer area 182 among a plurality of (here, four) side faces. In the first embodiment, the two delivery areas 182 are provided at positions facing each other with the processing area 181 interposed therebetween. Therefore, the two openings 312a and 312b are provided on the side surfaces facing each other among the plurality of side surfaces of the processing container 31, here, the side surface on the negative side of the X-axis and the side surface on the positive side of the X-axis. Thus, by providing a plurality of openings 312a and 312b on different side surfaces of the processing container 31, the opening area per side surface can be reduced compared to the case where the opening is provided on one side surface, for example. The smaller the opening area, the smaller the pressure applied to the lock member 42 described later when the processing space 311 is set to a high pressure. Therefore, it is easy to ensure the pressure resistance of the processing container 31 .

Each of the plurality of (here, two) lids 32 a and 32 b is connected to a moving mechanism 321 and horizontally moved between the processing area 181 and the delivery area 182 by the moving mechanism 321 . As a result, the lids 32a and 32b open and close the corresponding openings 312a and 312b of the processing vessel 31, respectively. Specifically, the lid 32a arranged on the X-axis negative direction side opens and closes the opening 312a formed on the side surface of the processing container 31 on the X-axis negative direction side, and the lid 32a arranged on the X-axis positive direction side opens and closes the opening 312a. The body 32b opens and closes an opening 312b formed on the side surface of the processing container 31 on the positive side of the X axis.

A plurality of (here, two) holding portions 33a and 33b horizontally hold different wafers W one by one. Each of the holding portions 33a and 33b is, for example, a rectangular frame in plan view, and holds the wafer W by supporting the outer peripheral portion of the wafer W from below.

Of the two holding portions 33a and 33b, the holding portion 33a arranged on the X-axis negative direction side is provided on the lid body 32a arranged on the X-axis negative direction side of the two lid bodies 32a and 32b. Of the two holding portions 33a and 33b, the holding portion 33b arranged on the X-axis positive direction side is provided on the lid 32b arranged on the X-axis positive direction side of the two lids 32a and 32b.

These holders 33 a and 33 b are housed inside the processing space 311 by moving to the processing area 181 together with the lids 32 a and 32 b by the moving mechanism 321 . Specifically, the holding part 33a that has entered the processing space 311 from the negative X-axis side is arranged below the holding part 33b that has entered the processing space 311 from the positive X-axis direction. In this way, the two holding parts 33a and 33b are arranged with a gap in the vertical direction inside the processing container 31, so that, for example, an increase in the footprint of the processing container 31 can be suppressed. In the following, when the lids 32a and 32b are not distinguished, they may be collectively referred to as "the lid 32". Similarly, the holding portions 33a and 33b may be collectively referred to as "holding portion 33", and the openings 312a and 312b may be collectively referred to as "opening 312".

The processing container 31 is provided with a supply section 35 and a discharge section 37 . The supply unit 35 is connected to a supply device group of the supply unit 19 (see FIG. 1), and supplies the processing fluid supplied from the supply unit 19 to the processing space 311 . The discharge part 37 discharges the processing fluid from the processing space 311 .

The supply unit 35 is provided on the ceiling surface of the processing space 311 in the processing container 31 and supplies the processing fluid vertically downward to the processing space 311 from a supply port that opens downward. The supply unit 35 is provided close to the opening 312 (here, the opening 312 on the positive side of the X-axis) of the two openings 312 formed in the processing container 31 through which the upper holding unit 33 enters and exits. Note that the supply unit 35 may be configured to have a plurality of supply ports along the horizontal direction (Y-axis direction) perpendicular to the alignment direction (X-axis direction) of the processing area 181 and the delivery area 182 .

The discharge part 37 is provided on the bottom surface of the processing space 311 in the processing container 31 and discharges the processing fluid from a discharge port that opens upward. The discharge part 37 is provided close to the opening 312 (here, the opening 312 on the X-axis negative direction side) through which the lower holding part 33 enters and exits, of the two openings 312 formed in the processing container 31 . Note that the discharge section 37 may be configured to have a plurality of discharge ports along the horizontal direction (Y-axis direction) orthogonal to the alignment direction (X-axis direction) of the processing area 181 and the delivery area 182 .

The drying unit 18 supplies the processing fluid from the supply unit 35 to the processing space 311 and discharges the processing fluid in the processing space 311 through the discharge unit 37 . A damper for adjusting the discharge amount of the processing fluid from the processing space 311 is provided in the discharge path of the processing fluid. quantity is adjusted. This maintains the supercritical state of the processing fluid in the processing space 311 . Hereinafter, the processing fluid in the supercritical state may be referred to as "supercritical fluid".

The processing container 31 includes a first projecting portion 313 and a second projecting portion 314 projecting from each opening 312 toward the opening direction side of each opening 312 . The first protrusion 313 protrudes from the bottom of the opening 312 in the X-axis direction, and the second protrusion 314 protrudes from the top of the opening 312 in the X-axis direction.

A first insertion hole 315 is formed in the first projecting portion 313 to communicate the upper surface and the lower surface of the first projecting portion 313 . Also, in the second protrusion 314 , a second insertion hole 315 is provided at a position facing the first insertion hole 315 in the vertical direction (that is, above the first insertion hole 315 ) so that the upper surface and the lower surface of the second protrusion 314 communicate with each other. A hole 316 is formed.

The drying unit 18 also includes a plurality of (here, two) locking members 42 . The lock member 42 is inserted through each of the plurality of first insertion holes 315 formed in the first projecting portion 313 . Each lock member 42 is connected to an elevating mechanism 43 that moves the lock member 42 along the vertical direction.

[5. Operation example of the drying unit]
In the drying unit 18, first, two wafers W are loaded. In the carry-in process, the drying unit 18 horizontally moves the cover 32a arranged on the X-axis negative direction side in the X-axis positive direction by the moving mechanism 321, and moves the cover 32b arranged on the X-axis positive direction side to the X-axis direction. It is horizontally moved by the moving mechanism 321 in the axial negative direction. As a result, the two wafers W respectively held by the two holders 33a and 33b are accommodated in the processing space 311 of the processing container 31, and the processing space 311 is sealed by the two lids 32a and 32b. becomes. The order and timing of moving the two lids 32a and 32b are not particularly limited.

In addition, the drying unit 18 raises the two lock members 42 by the elevating mechanism 43 to insert each lock member 42 into the second insertion hole 316 formed in the second projecting portion 314 .

The locking member 42 presses the lid 32 toward the processing space 311 against the internal pressure caused by the processing fluid supplied to the processing space 311 . As a result, the processing space 311 can be kept sealed by the lids 32a and 32b.

Subsequently, in the drying unit 18, a pressurization process is performed. In the pressurization process, the drying unit 18 supplies the processing fluid from the supply unit 35 to the processing space 311 of the processing vessel 31 to increase the pressure of the processing space 311 . Thereby, the pressure in the processing space 311 rises from the atmospheric pressure to the processing pressure. The processing pressure is a pressure exceeding the critical pressure (approximately 7.2 MPa) at which CO2, which is the processing fluid, becomes supercritical, and is, for example, about 16 MPa. Due to this pressurizing process, the processing fluid in the processing space undergoes a phase change to a supercritical state, and the IPA liquid heaped up on the surface of the wafer W begins to dissolve into the processing fluid in the supercritical state. The processing fluid supplied from the supply unit 19 may be in a supercritical state or in a liquid state.

Subsequently, in the drying unit 18, distribution processing is performed. In the circulation process, the drying unit 18 supplies the processing fluid from the supply unit 35 to the processing space 311 while maintaining the pressure of the processing space 311 at the processing pressure, and discharges the processing fluid supplied to the processing space from the discharge unit 37. It is discharged to the outside of the processing space 311 . Thereby, a laminar flow of the processing fluid flowing in a predetermined direction around the wafer W is formed in the processing space 311 .

Here, the flow path of the processing fluid in the processing space 311 will be described with reference to FIG. FIG. 6 is a schematic cross-sectional view showing an example of the flow path of the processing fluid in the processing space 311. As shown in FIG. In addition, in FIG. 6, a part of the configuration of the drying unit 18 is omitted.

As shown in FIG. 6, the processing fluid is supplied from the supply unit 35 to the upper surface of the wafer W held by the upper lid member 32b, and then moves along the upper surface of the upper wafer W in the negative X-axis direction. flow to Thereafter, the processing fluid flows downward between the tip of the upper holding portion 33b and the inner wall of the processing space 311, and then flows along the surface of the wafer W held by the lower holding portion 33a. Flows in the positive direction of the X-axis. After that, the processing fluid flows downward between the tip of the lower holding part 33a and the inner wall of the processing space 311, and then flows between the lower surface of the lower wafer W and the bottom surface of the processing space 311 on the X axis. flow in the direction Then, the processing fluid is discharged from the discharge portion 37 to the outside of the processing space 311 .

The IPA liquid existing on the pattern formation surface (upper surface) of the wafer W is gradually dissolved in the supercritical fluid by contacting with the supercritical fluid which is in a high pressure state (for example, 16 MPa), and finally, Replaced by supercritical fluid. This fills the gaps between the patterns with the supercritical fluid.

As described above, according to the drying unit 18, the flow of the processing fluid that flows along the surface of each wafer W can be formed inside the processing space 311, so that a plurality of wafers W can be subjected to the supercritical drying process. It is possible to suppress deterioration in processing uniformity in the case of simultaneous processing.

Subsequently, decompression processing is performed in the drying unit 18 . In the decompression process, the drying unit 18 reduces the pressure in the processing space 311 from a high pressure state to atmospheric pressure. This converts the supercritical fluid that filled the interstices between the patterns into a normal or gaseous process fluid.

Thus, the drying unit 18 removes the IPA liquid from the pattern formation surface by replacing the IPA liquid present on the pattern formation surface with the supercritical fluid and then returning the supercritical fluid to the gaseous processing fluid. Allow the patterned surface to dry.

A supercritical fluid has a lower viscosity than a liquid (eg, an IPA liquid), a higher ability to dissolve a liquid, and there is no interface between the supercritical fluid and the liquid or gas in equilibrium. Therefore, by performing the supercritical drying process, the liquid can be dried without being affected by the surface tension. That is, it is possible to prevent the pattern from collapsing during the drying process.

Here, the IPA liquid is used as the anti-drying liquid, and the CO2 is used as the processing fluid. may be used.

As described above, according to the drying unit 18 according to the first embodiment, the supercritical drying process is simultaneously performed on a plurality of wafers W. As compared with the substrate processing apparatus of No. 1, the efficiency of the supercritical drying process can be improved. In addition, for example, compared to the case where the number of drying units is increased to improve the efficiency of the supercritical drying process, an increase in cost of the substrate processing system 1 can be suppressed.

(Second embodiment)
FIG. 7 is a schematic cross-sectional view showing the configuration of a drying unit according to the second embodiment. In addition, in each of the following embodiments, part of the configuration of the drying unit may be omitted to facilitate understanding.

As shown in FIG. 7, the drying unit 18A according to the second embodiment includes a partition plate 38. As shown in FIG. The partition plate 38 is a plate-like member arranged between the upper holding portion 33b and the lower holding portion 33a, and extends in the positive X-axis direction from the inner wall of the processing space 311 in the processing container 31 on the negative X-axis direction side. extending towards the inner wall of the side. A gap is provided between the tip of the partition plate 38 and the inner wall of the processing space 311 on the positive side of the X-axis. The partition plate 38 may be provided separately from the processing container 31, or may be integrally formed.

In the drying unit 18A according to the second embodiment, the processing fluid flows downward between the tip of the upper holding portion 33b and the inner wall of the processing space 311, and then flows between the partition plate 38 and the upper wafer W. It flows in the positive direction of the X-axis between the lower surface. After that, the processing fluid flows in the negative direction of the X-axis between the lower surface of the partition plate 38 and the upper surface of the lower wafer W, and then flows downward through the hollow portion of the frame-like holding portion 33 to be discharged. It is discharged from the part 37 to the outside of the processing space 311 .

In this way, by providing the partition plate 38 between the upper holding portion 33b and the lower holding portion 33a, the space above the lower holding portion 33a can be narrowed. Process fluids can be contacted more efficiently. The partition plate 38 is positioned so that the distance D1 between the lower surface of the partition plate 38 and the upper surface of the wafer W is the same as the distance D2 between the ceiling surface of the processing space 311 and the upper surface of the wafer W in the upper stage. placed. Thereby, the processing uniformity of supercritical drying processing for a plurality of wafers W can be improved.

Here, an example in which the partition plate 38 is provided in the processing container 31 is shown, but the partition plate 38 may be provided in the lower lid body 32a or the lower holding portion 33a.

(Third Embodiment)
FIG. 8 is a schematic cross-sectional view showing the configuration of a drying unit according to the third embodiment. As shown in FIG. 8, the drying unit 18B according to the third embodiment includes a replenishment section 50. As shown in FIG. The replenishment unit 50 is arranged in the delivery area 182 (here, the delivery area 182a) to which the wafer W first transported to the drying unit 18B is transferred, out of the two delivery areas 182. IPA is replenished on the upper surface of the wafer W held by 33a.

As described above, the IPA liquid film is formed on the upper surface of the wafer W held by the holding portion 33a in the delivery area 182a. Since the transport device 16 (see FIG. 1) transports the wafers W one by one, the wafer W first transported to the drying unit 18B waits until the second wafer W is transported to the drying unit 18B. , waiting in the delivery area 182a. During this time, the IPA liquid on the upper surface of the first wafer W volatilizes, and there is a possibility that the liquid film thicknesses of the two wafers W may differ.

On the other hand, the drying unit 18B according to the third embodiment applies the IPA liquid to the first wafer W to be transported to the drying unit 18B among the two wafers W to be processed at the same time. can be supplemented. Therefore, according to the drying unit 18B of the third embodiment, it is possible to suppress the difference in thickness of the liquid film between the two wafers W. FIG.

Note that the drying unit 18B may include the replenishment units 50 in both of the two delivery areas 182 (for example, the delivery areas 182a and 182b).

(Fourth embodiment)
FIG. 9 is a schematic cross-sectional view showing the configuration of a drying unit according to the fourth embodiment. As shown in FIG. 9, the drying unit 18C according to the fourth embodiment has a delivery area 182 (here, A box 51 surrounding the delivery area 182a) is provided. The box 51 can accommodate the lid 32a, the holder 33a, and the wafer W arranged in the delivery area 182a. Moreover, the drying unit 18C according to the fourth embodiment includes an atmosphere supply section 52 that supplies an IPA atmosphere to the inside of the box 51 .

According to the drying unit 18C according to the fourth embodiment, by supplying the IPA atmosphere to the inside of the box 51 using the atmosphere supply unit 52, the liquid film of the IPA liquid formed on the upper surface of the wafer W volatilizes. can be suppressed. Therefore, it is possible to suppress the difference in the thickness of the liquid film between the two wafers W. FIG.

Note that the drying unit 18C may include the box body 51 and the atmosphere supply section 52 in both of the two delivery areas 182 (for example, the delivery areas 182a and 182b).

(Fifth embodiment)
FIG. 10 is a schematic cross-sectional view showing the configuration of a drying unit according to the fifth embodiment. As shown in FIG. 10, a drying unit 18D according to the fifth embodiment includes a processing container 31D, two lids 32Da and 32Db, and four holders 33e to 33h.

The lids 32Da and 32Db support two of the four holding portions 33e to 33h. Specifically, the lid 32Da supports the holding portions 33e and 33f, and the lid 32Db supports the holding portions 33g and 33h.

Inside the processing space 311, the four holding portions 33e to 33h are holding portions 33e and 33f supported by the lid 32Da on the positive side of the X-axis, and holding portions 33e and 33f supported by the lid 32Db on the negative side of the X-axis. The portions 33g and 33h are arranged alternately.

Thus, the drying unit 18D may be configured to include three or more holding portions 33e to 33h. In this case, the holders 33e and 33f supported by one lid 32Da and the holders 33g and 33h supported by the other lid 32Db are alternately arranged to support the lids 32Da and 32Db. Intervals between the plurality of holding portions 33e to 33h can be widened. Therefore, transfer of the wafer W by the transfer device 16 is easy. By alternately arranging the holding portions 33e to 33h supported by the lids 32Da and 32Db on one side and the holding portions 33e to 33h supported by the lid 32Db on the other side, the upper surface of each wafer W is positioned at the top. A flow of processing fluid can be formed within the processing space 311 that flows sequentially from .

In the fifth embodiment, each processing block 5 may be provided with four liquid processing units 17 .

Further, here, an example in which the same number of holding portions are provided on one lid 32Da and the other lid 32Db is shown, but the number of holding portions provided on one lid 32Da and the number of holding portions on the other lid are shown. The number of holding portions provided in 32Db may be different.

(Sixth embodiment)
FIG. 11 is a schematic cross-sectional view showing the configuration of a drying unit according to the sixth embodiment. As shown in FIG. 11, the drying unit 18E according to the sixth embodiment includes a processing container 31E having one opening 312E, one lid 32E, and a plurality of holders 33Ea to 33Ec. A plurality (here, three) of holding portions 33Ea to 33Ec are provided on one lid 32E.

The drying unit 18E also includes a plurality of (here, three) supply units 35Ea to 35Ec. A plurality of supply units 35Ea to 35Ec are provided on the side surface of the processing container 31E opposite to the side surface on which the opening 312E is provided.

Each of the plurality of supply portions 35Ea-35Ec corresponds to each of the plurality of wafers W held by the plurality of holding portions 33Ea-33Ec. Specifically, the upper supply unit 35Ea of the three supply units 35Ea to 35Ec is the upper surface of the wafer W held by the upper holder 33Ea of the three holders 33Ea to 33Ec and the ceiling surface of the processing space 311E. is placed at a height between Similarly, the middle feeding section 35Eb is arranged at a height between the upper surface of the wafer W held by the middle holding section 33Eb and the lower surface of the upper wafer W, and the lower feeding section 35Ec is arranged at the lower holding section. It is arranged at a height position between the upper surface of the wafer W held by 33Ec and the lower surface of the wafer W in the middle stage.

Each of the supply units 35Ea to 35Ec supplies the processing fluid along the upper surface of the corresponding wafer W. As shown in FIG. Therefore, according to the drying unit 18E according to the sixth embodiment, it is possible to uniformly supply the processing fluid to the plurality of wafers W.

Moreover, the drying unit 18E according to the sixth embodiment has a configuration in which a plurality of holding portions 33Ea to 33Ec are provided for one lid 32E. With such a configuration, the number of delivery areas 182 can be reduced to one, so an increase in footprint can be suppressed.

FIG. 12 is a schematic plan view showing the configuration of the holding portion 33Ea in the sixth embodiment. Since the holding portions 33Eb and 33Ec also have the same configuration as the holding portion 33Ea, description thereof will be omitted here.

As shown in FIG. 12, the holding portion 33Ea has a hook-like shape in a plan view with a portion that interferes with the transfer device 16 when the wafer W is transferred. Specifically, the holding portion 33</b>Ea has a first support portion 331 , a second support portion 332 and a third support portion 333 . The first support portion 331 extends along the Y-axis direction and supports the outer peripheral portion of the wafer W on the negative side of the X-axis. The second support portion 332 extends along the X-axis direction from the end of the first support portion 331 in the positive Y-axis direction, and supports the outer peripheral portion of the wafer W in the positive Y-axis direction. The third support portion 333 and the second support portion 332 extend along the Y-axis direction from the end portion of the second support portion 332 on the positive X-axis direction side, and extend from the outer peripheral portion of the wafer W on the positive X-axis direction side. support. The holding part 33</b>Ea supports the wafer W at three points by the first supporting part 331 , the second supporting part 332 and the third supporting part 333 .

When a plurality of holders 33Ea to 33Ec are provided for one lid 32E, the distance between the holders 33Ea to 33Ec becomes narrower, which may make it difficult for the transfer device 16 to transfer the wafer W. On the other hand, by adopting the above-described shape of the holding portion 33E, it is possible to suppress the interference between the conveying device 16 and the holding portions 33Ea to 33Ec even when the intervals between the plurality of holding portions 33Ea to 33Ec are narrow. can.

(Seventh embodiment)
FIG. 13 is a schematic cross-sectional view showing the configuration of a drying unit according to the seventh embodiment. As shown in FIG. 13, a drying unit 18F according to the seventh embodiment includes a processing container 31F, a lid body 32F, and a plurality of holders 33F.

The processing container 31F has an opening 312F at the top. The lid 32F is arranged above the processing container 31F and is moved vertically by the movement mechanism 321F.

A plurality of holding portions 33F are provided on the lower surface of the lid 32F, which serves as the ceiling surface of the processing space 311F, via a support member 39 extending in the vertical direction. The plurality of holding portions 33F are arranged at intervals in the vertical direction.

The drying unit 18F uses the moving mechanism 321F to move the lid 32F downward. As a result, the plurality of holding portions 33F provided on the lid 32F are accommodated in the processing space 311F of the processing container 31F, and the processing space 311F is sealed by the lid 32F.

A supply unit 35F is provided in the processing container 31F, and the processing fluid is supplied into the processing space 311F via the supply unit 35F. Further, the processing vessel 31F is provided with a discharge portion 37F, and the processing fluid is discharged from the processing space 311F via the discharge portion 37F. Although an example in which the supply section 35F and the discharge section 37F are provided on the bottom surface of the processing space 311F is shown here, the supply section 35F and the discharge section 37F may be provided on the side surface of the processing space 311F. In this case, the drying unit 18F may be provided with a plurality of supply units for supplying the processing fluid along the upper surface of each wafer W. Specifically, the drying unit 18F may be provided with the same number of supply units as the wafers W. preferable. A configuration including a plurality of supply units corresponding to each of the plurality of wafers W held by the plurality of holding units and supplying the processing fluid along the upper surface of the corresponding wafer W is similar to the drying apparatus according to another embodiment. Also applicable to units.

In this manner, the plurality of holding portions 33F may be provided on the lid 32F capable of opening and closing the processing container 31F having an open top.

(Other embodiments)
In the first to fourth embodiments, one opening 312 is provided in each of the two side surfaces facing each other among the plurality of side surfaces of the processing container 31, and one wafer W is transferred from one opening 312 to the other wafer W. was carried in through the opening 312 on the opposite side. The two openings 312 are not limited to this, and the two openings 312 may be provided on two sides perpendicular to each other among the plurality of sides of the processing container 31 . For example, the openings 312 may be provided on the side surface on the X-axis negative direction side and the side surface on the Y-axis negative direction side among the plurality of side surfaces of the processing container 31 . The same applies to the lid body 32D according to the fifth embodiment.

Also, the number of liquid processing units 17 arranged in each processing block 5 does not necessarily have to be the same as the number of wafers W simultaneously processed by the drying units 18, 18A to 18F. For example, in the substrate processing system 1 according to the first embodiment, the number of liquid processing units 17 arranged in the processing block 5 may be one.

As described above, the substrate processing apparatus (eg, the drying units 18 and 18A to 18F) according to the embodiment performs a drying process of drying a substrate (eg, a wafer W) using a supercritical processing fluid. It is a substrate processing apparatus performed. The substrate processing apparatus according to the embodiment includes a processing container (processing containers 31, 31D to 31F, as an example) and a plurality of holding units (holding units 33, 33E, 33F, as an example). A processing container is a container in which a drying process is performed. The plurality of holding units hold different substrates inside the processing container. Therefore, according to the substrate processing apparatus according to the embodiment, it is possible to improve the efficiency of the supercritical drying process.

A plurality of holding parts (holding parts 33, 33E, and 33F, for example) may be arranged at intervals in the vertical direction inside the processing vessel. Thereby, for example, an increase in the footprint of the processing container can be suppressed.

The substrate processing apparatus according to the embodiment (drying units 18, 18A to 18D as an example) includes a first cover (as an example, cover 32, 32D arranged on the negative side of the X-axis) and a second lid. lids (for example, lids 32 and 32D arranged on the positive side of the X-axis). The first lid is a first opening (eg, the X-axis The opening 312 on the negative direction side can be opened and closed. The second lid can open and close a second opening (for example, the opening 312 on the positive side of the X axis) provided on the second side surface of the processing container (for example, the side surface on the positive side of the X axis). is. In this case, some of the plurality of holding portions (for example, one or a plurality of holding portions 33 arranged on the X-axis negative direction side) may be provided on the first lid. Further, some of the plurality of holding portions (for example, one or a plurality of holding portions 33 arranged on the positive side of the X-axis) may be provided on the second lid. In this way, by providing a plurality of openings on different sides of the processing container, it becomes easy to ensure the pressure resistance of the processing container.

A plurality of holding portions (for example, a plurality of holding portions 33 provided in the drying unit 18D) are arranged inside the processing container (for example, the processing container 31D), and some of the holding portions (for example, in the negative direction of the X axis) The plurality of holding portions 33) and some other holding portions (for example, the plurality of holding portions 33 arranged in the positive direction of the X axis) may be arranged alternately. As a result, it is possible to widen the intervals between the plurality of holding portions supported by one lid, so that the transfer of the substrate by the transfer device is facilitated.

The second side surface (as an example, the side surface in the X-axis positive direction) is the first side surface (as an example, the X-axis negative direction side side)). Accordingly, for example, by arranging the first side surface and the second side surface along the longitudinal direction of the substrate processing system 1, an increase in width of the substrate processing system 1 in the lateral direction can be suppressed.

The substrate processing apparatus (drying unit 18E as an example) according to the embodiment includes a lid (as an example, a A lid 32E) may be further provided. In this case, the plurality of holding portions (holding portion 33E as an example) may be provided in the lid (lid 32E as an example). As a result, the number of delivery areas 182 can be reduced to one, so an increase in footprint can be suppressed.

The substrate processing apparatus according to the embodiment (drying unit 18F as an example) further includes a lid (lid 32F as an example) capable of opening and closing the processing container (processing container 31F as an example) with an open top. may In this case, the plurality of holding portions (holding portion 33F as an example) may be provided in the lid (lid 32F as an example). Thereby, an increase in footprint can be suppressed.

The substrate processing apparatus according to the embodiment (drying units 18 and 18A to 18D as an example) may include a supply section 35 and a discharge section 37 . The supply unit 35 is arranged above the substrate held by the uppermost holding unit among the plurality of holding units (holding unit 33, for example) inside the processing container (processing containers 31 and 31D, for example). and supplies the processing fluid to the inside of the processing container. The discharge part 37 is arranged below the substrate held by the lowest holding part among the plurality of holding parts inside the processing container, and discharges the processing fluid from the inside of the processing container. Thereby, a flow of the processing fluid that sequentially flows over the upper surface of each substrate from the top can be formed inside the processing space.

The substrate processing apparatus (drying unit 18A as an example) according to the embodiment includes a partition plate 38 disposed between two vertically adjacent holding units inside a processing container (processing container 31 as an example). You may have more. As a result, the space above the lower holding portion of the two holding portions adjacent in the vertical direction can be narrowed, and the processing fluid is brought into contact with the substrate held by the lower holding portion more efficiently. be able to.

In the substrate processing apparatus (for example, the drying unit 18A) according to the embodiment, the uppermost holding portion 33b of the two vertically adjacent holding portions 33a and 33b is the uppermost holding portion 33b of the plurality of holding portions 33a and 33b. It may be a holding part. In this case, the partition plate 38 is such that the distance D1 between the upper surface of the substrate held by the lower holding portion 33a of the two holding portions 33a and 33b adjacent in the vertical direction and the lower surface of the partition plate 38 is may be arranged at a position equal to the distance D2 between the upper surface of the substrate held by the upper holding portion 33b and the ceiling surface of the processing container 31 among the two holding portions 33a and 33b adjacent to the . As a result, it is possible to improve the processing uniformity of supercritical drying processing for a plurality of substrates.

The substrate processing apparatus (drying unit 18E as an example) according to the embodiment is a processing container (processing space 311E as an example) that holds a plurality of substrates held by a plurality of holding units (holding unit 33E as an example). Among them, a plurality of supply units (for example, supply unit 35E) for supplying the processing fluid along the upper surface of the corresponding substrate may be further provided. Thereby, the processing fluid can be uniformly supplied to the plurality of substrates accommodated in the processing container.

The substrate processing apparatus (drying unit 18B as an example) according to the embodiment is arranged in a delivery area (delivery area 182 as an example) adjacent to the processing container, and a film of liquid (IPA as an example) is formed on the upper surface. A replenishing part 50 for replenishing liquid to the upper surface of the substrate may be further provided. Thereby, it is possible to suppress the occurrence of a difference in the thickness of the liquid film among the plurality of substrates.

A substrate processing apparatus (a drying unit 18</b>C, for example) according to the embodiment may include a box 51 and an atmosphere supply section 52 . The box 51 is a box surrounding a transfer area (for example, the transfer area 182) adjacent to the processing container, and can accommodate a substrate having a liquid (for example, IPA) film formed on its upper surface. The atmosphere supply unit 52 supplies a liquid atmosphere to the inside of the box 51 . Thereby, it is possible to suppress the occurrence of a difference in the thickness of the liquid film among the plurality of substrates.

It should be considered that the embodiments disclosed this time are illustrative in all respects and not restrictive. Indeed, the above-described embodiments may be embodied in many different forms. Also, the above-described embodiments may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

W Wafer 1 Substrate processing system 16 Transfer device 17 Liquid processing unit 18 Drying unit 31 Processing vessel 32 Lid 33 Holding unit 35 Supply unit 37 Discharge unit 42 Lock member 43 Lifting mechanism 181 Processing area 182 Transfer area 311 Processing space 312 Opening 321 Movement mechanism

Claims (11)

A substrate processing apparatus for performing a drying process for drying a substrate using a processing fluid in a supercritical state,
a processing container in which the drying processing is performed;
a plurality of holding units arranged at intervals in the vertical direction inside the processing container and holding different substrates inside the processing container ;
a first lid capable of opening and closing a first opening provided on a first side surface of the processing container;
a second lid capable of opening and closing a second opening provided on a second side surface of the processing container;
with
Some of the plurality of holding portions are provided on the first lid,
The substrate processing apparatus , wherein the other part of the holding parts among the plurality of holding parts is provided on the second lid body . The plurality of holding parts are
2. The substrate processing apparatus according to claim 1 , wherein said part of said holding parts and said other part of said holding parts are alternately arranged inside said processing container. The second aspect includes:
3. The substrate processing apparatus according to claim 1 , arranged at a position facing said first side surface among a plurality of side surfaces of said processing container. 4. The processing container further comprises a plurality of supply units for supplying the processing fluid along the upper surface of the corresponding one of the plurality of substrates held by the plurality of holding units inside the processing container . The substrate processing apparatus according to any one of . A substrate processing apparatus for performing a drying process for drying a substrate using a processing fluid in a supercritical state,
a processing container in which the drying processing is performed;
a plurality of holding units arranged at intervals in the vertical direction inside the processing container and holding different substrates inside the processing container ;
a supply unit disposed inside the processing container above the substrate held by the uppermost holding unit among the plurality of holding units and supplying the processing fluid to the inside of the processing container;
a discharge unit disposed inside the processing container below the substrate held by the lowermost holding unit among the plurality of holding units and discharging the processing fluid from the inside of the processing container;
a partition plate disposed between the two vertically adjacent holding portions inside the processing container;
A substrate processing apparatus comprising: the upper holding portion of the two holding portions adjacent to each other in the vertical direction is the uppermost holding portion of the plurality of holding portions;
The partition plate
The distance between the upper surface of the substrate held by the lower holding portion of the two vertically adjacent holding portions and the lower surface of the partition plate is the upper of the two vertically adjacent holding portions. 6. The substrate processing apparatus according to claim 5 , arranged at a position equal to the distance between the upper surface of said substrate held by said holding portion and the ceiling surface of said processing container. 7. The apparatus according to any one of claims 1 to 6 , further comprising: a replenishing unit arranged in a delivery area adjacent to the processing container and replenishing the liquid onto the upper surface of the substrate having a liquid film formed on the upper surface of the substrate. substrate processing equipment. A substrate processing apparatus for performing a drying process for drying a substrate using a processing fluid in a supercritical state,
a processing container in which the drying processing is performed;
a plurality of holding units each holding the different substrates inside the processing container ;
a box surrounding a transfer area adjacent to the processing container, the box being capable of accommodating the substrate having a liquid film formed on its upper surface;
an atmosphere supply unit that supplies an atmosphere of the liquid to the inside of the box;
A substrate processing apparatus comprising: A plurality of holding units arranged at intervals in a vertical direction inside a processing container provided in a substrate processing apparatus, some of the holding units include a first holding unit provided on a first side surface of the processing container. The other part of the holding part is a second lid capable of opening and closing a second opening provided on the second side surface of the processing container. a holding step of holding a plurality of substrates using the plurality of holding portions provided in the
a housing step of housing the plurality of holding units holding the plurality of substrates in the processing container;
and a drying step of drying the plurality of substrates using a supercritical processing fluid in the processing container. a holding step of holding a plurality of substrates by using a plurality of holders arranged at intervals in a vertical direction inside a processing container provided in the substrate processing apparatus;
a housing step of housing the plurality of holding units holding the plurality of substrates in the processing container;
a drying step of drying the plurality of substrates using a supercritical processing fluid in the processing container;
The substrate processing apparatus is
a supply unit disposed inside the processing container above the substrate held by the uppermost holding unit among the plurality of holding units and supplying the processing fluid to the inside of the processing container;
a discharge unit disposed inside the processing container below the substrate held by the lowermost holding unit among the plurality of holding units and discharging the processing fluid from the inside of the processing container;
a partition plate disposed between the two vertically adjacent holding portions inside the processing container;
with
The drying step includes
The substrate processing method , wherein the processing fluid is discharged from the processing container using the discharge unit while the processing fluid is being supplied from the supply unit into the processing container . a holding step of holding a plurality of substrates having a liquid film formed thereon using a plurality of holding units provided in the substrate processing apparatus;
a housing step of housing the plurality of holders holding the plurality of substrates in a processing container provided in the substrate processing apparatus;
a drying step of drying the plurality of substrates using a supercritical processing fluid in the processing container;
The holding step is carried out inside a box surrounding a transfer area adjacent to the processing container, the inside of the box being supplied with an atmosphere of the liquid by an atmosphere supply unit provided in the substrate processing apparatus. Substrate processing method.

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