JP7152688B2 - light emitting device - Google Patents

Description

TECHNICAL FIELD The present invention relates to a light-emitting device, and more particularly to a light-emitting device having a light-emitting element that emits light having a wavelength in the ultraviolet range.

Conventionally, there has been proposed a light-emitting device having a light-emitting element such as a light-emitting diode or a laser diode on a substrate. Such a light-emitting device may include a light-emitting element that emits light having a wavelength in the ultraviolet region (hereinafter sometimes referred to as ultraviolet light) depending on the application. Moreover, such a light emitting device may have a reflector surrounding the light emitting element and a transparent board for sealing the light emitting device in order to ensure desired characteristics (Patent Document 1).

JP 2008-78586 A

Ultraviolet light can degrade components of light-emitting devices or decompose materials thereof, which can lead to reduced reliability of light-emitting devices. However, if a material or structure that is not degraded by ultraviolet light is used, the structure of the light-emitting device may become complicated, or light extraction may be reduced.

The embodiments of the present invention have been made in view of the above problems, and an object thereof is to provide a light-emitting device that has a simple structure, high reliability, and excellent light extraction.

A light-emitting device according to an embodiment comprises a substrate having a wiring layer on a first main surface, a light-emitting element flip-chip mounted on the wiring layer and emitting light having a wavelength in the ultraviolet region, and a light-emitting element and the substrate. a protective film that continuously covers the first main surface, wherein the protective film is provided by an atomic deposition method and covers between the light emitting element and the first main surface.

According to the embodiments of the present invention, it is possible to provide a light-emitting device with a simple structure, high reliability, and excellent light extraction.

1 is a cross-sectional view of a light emitting device according to an embodiment of the invention; FIG. 1B is a top view of the light emitting device shown in FIG. 1A; FIG. FIG. 4 is a cross-sectional view of a light emitting device according to another embodiment of the invention; 2B is a top view of the light emitting device shown in FIG. 2A; FIG. FIG. 10 is a cross-sectional view of a light emitting device according to still another embodiment of the present invention; 3B is a bottom view of the light emitting device shown in FIG. 3A; FIG. 3C is a modification of the light emitting device shown in FIG. 3B. In addition, the position of the light emitting element arranged on the first main surface side is indicated by a dotted line. FIG. 10 is a perspective view of a light emitting device according to still another embodiment of the present invention; 5B is a top view of the light emitting device shown in FIG. 5A; FIG. FIG. 10 is a perspective view of a light emitting device according to still another embodiment of the present invention;

Embodiments of the present invention will be described with reference to the drawings as appropriate. However, the light-emitting device described below is for embodying the technical idea of the embodiments of the present disclosure, and unless there is a specific description, the embodiments of the present disclosure are not limited to the following. In addition, the contents described in one embodiment and example can also be applied to other embodiments and examples.
The sizes and positional relationships of members shown in each drawing may be exaggerated for clarity of explanation.

(embodiment)
The light-emitting device of this embodiment includes a substrate, a light-emitting element flip-chip mounted on the substrate, and a protective film formed by atomic deposition to continuously cover the substrate and the light-emitting element. This light-emitting device optionally includes an electronic component such as a protective element, a covering member for sealing the electronic component, a sealing member for further sealing the light-emitting element (and the electronic component) covered with the protective film, and the like. good too.

[Substrate]
The base is a member on which the light-emitting element is mounted, and may be plate-shaped or have a recess for accommodating the light-emitting element. In particular, it is preferable to use a flat substrate. By using a flat substrate, the light from the light emitting element is not absorbed by the walls forming the recess, so the output can be further improved. In addition, a small light-emitting device can be formed, and material costs and manufacturing costs can be reduced. Furthermore, deterioration of airtightness can be avoided.

The substrate usually has a first main surface on which the light emitting element is mounted and a second main surface opposite to the first main surface. The substrate has positive and negative wiring layers on at least the first main surface thereof to which the light emitting element can be flip-chip mounted.

The substrate of the embodiment has a substantially rectangular shape in plan view, but is not particularly limited. When a substrate having a substantially rectangular shape in plan view is used and a light emitting element having a substantially rectangular shape in plan view is mounted, a small light emitting device can be formed.

The substrate is preferably made of a material capable of reflecting light from the light emitting element. In particular, it is preferable to reflect 60% or more and 70% or more of the light from the light emitting element. Moreover, it is preferable that the light-emitting element is formed of a material that hardly absorbs light emitted from the light-emitting element. For example, it can be formed of a single material of insulating materials such as glass, ceramics, resin, wood, pulp, etc., conductive materials such as semiconductors, metals (e.g., copper, silver, gold, aluminum, etc.), and composite materials thereof. . Among them, metals, ceramics, resins, and the like are preferable, and ceramics, which is an inorganic material, is more preferable. Aluminum nitride, which has particularly high heat dissipation, is preferable as ceramics.

The wiring layer is not particularly limited as long as it can be electrically connected to the light emitting element, and can be made of a material known in the art. For example, metals such as copper, aluminum, gold, and silver can be used. The thickness can be from several μm to several hundred μm. The wiring layer can be formed by plating, sputtering, or other known methods.

[Light emitting element]
A light-emitting device includes a light-emitting element that emits ultraviolet light. Here, ultraviolet light refers to light with a wavelength of 200 to 410 nm, for example. A single light-emitting element or a plurality of light-emitting elements may be used, and for example, a plurality of light-emitting elements each emitting different light may be used. Further, in addition to the light-emitting element that emits ultraviolet light, a light-emitting element that emits visible wavelength light and/or infrared light may be provided.

As the light-emitting element, light-emitting elements such as light-emitting diodes and lasers that are generally used in the relevant field can be used. For example, nitride semiconductors (In _X Al _Y Ga _1-XY N, 0≦X, 0≦Y, X+Y≦1), III-V group compound semiconductors such as GaP and GaAs, ZnSe, II-VI group Various semiconductors such as compound semiconductors can be used.

A light-emitting element has at least a semiconductor layer including a light-emitting layer and positive and negative electrodes. In this embodiment, the light-emitting element has positive and negative electrodes on the same side and is flip-chip mounted on the substrate. As compared with the case where the light emitting element is electrically connected to the wiring layer of the substrate by a wire or the like, it is not necessary to provide a region for wire bonding around the light emitting element, so that the size of the light emitting device can be reduced. can be done. Moreover, when a plurality of light emitting elements are mounted, the light emitting elements can be densely mounted, and the peak radiation intensity can be improved. Furthermore, the wire material cost and wire bonding process cost can be reduced.

Alternatively, the light emitting device may have a substrate for growing semiconductor layers. Substrates include insulating substrates such as sapphire and spinel (MgAl ₂ O ₄ ), SiC, ZnS, ZnO, Si, GaAs, diamond, and oxides of lithium niobate and neodymium gallate that are lattice-bonded to nitride semiconductors. material substrates. In particular, the substrate is preferably translucent. Note that the substrate may be removed using a laser lift-off method or the like.

The light emitting element is, for example, tin-bismuth-based, tin-copper-based, tin-silver-based, gold-tin-based solder, Au and Sn, Au and Si, Au and Ge, Au and Cu, Ag and Cu. Through a conductive bonding member such as a eutectic alloy such as an alloy having a main component, or a conductive paste such as silver, gold, or palladium, a bump, an anisotropic conductive material, or a brazing material of a low melting point metal, It is flip-chip mounted on the substrate. In particular, it is preferable to use solder, eutectic alloys such as alloys, and bumps that are not easily deteriorated by ultraviolet light.

〔Protective film〕
The protective film is formed by an atomic deposition method (hereinafter sometimes referred to as “ALD” (Atomic Layer Deposition)) after the light emitting element is mounted on the base, and connects the light emitting element and the first main surface of the base continuously. effectively cover. Continuous means that there are no gaps from the light emitting element to the first main surface of the substrate. The protective film is also provided between the light emitting element and the first main surface of the substrate (specifically, the side surface of the electrode of the light emitting element, the electrode forming surface, and the first main surface facing the electrode forming surface).
Such a protective film can form the outer surface of the light emitting device (ie, it can completely cover the light emitting element by itself). Therefore, a light-emitting device having a small size, a simple structure, and high reliability can be formed. In addition, since the light-emitting element is covered only with the protective film, unnecessary light absorption can be suppressed, and the light-emitting device with good light extraction can be obtained. In particular, in this embodiment, since the light emitting element is flip-chip mounted on the substrate, the semiconductor layer is arranged on the substrate side. As a result, deterioration of the semiconductor layer due to moisture intrusion from the substrate side becomes a problem. It is possible to effectively prevent a decrease in the light intensity and the failure to light due to the occurrence of cracks.
When an electronic component, which will be described later, is mounted on the first main surface, the protective film preferably covers the light emitting element, the electronic component, and the first main surface of the substrate continuously. Moreover, when the protective film has a back electrode for mounting the light-emitting device on another mounting board (for example, a circuit board) on the second main surface side of the base, it is preferable to expose the back electrode. .

The protective film may be a single layer film or multilayer film of one material, or a multilayer film of two or more different materials. A multi-layered film can improve the extraction of light from the light-emitting element.
The protective film preferably has a thickness of, for example, approximately 1 nm to 10 μm. With such a range, light absorption of the light-emitting element can be reduced while sufficiently protecting the light-emitting element.

The protective film is preferably made of, for example, an inorganic material. Specific examples include aluminum oxide (Al ₂ O ₃ ), silicon dioxide (SiO ₂ ), aluminum nitride (AlN), silicon nitride (Si ₃ N ₄ ), etc. Aluminum oxide is particularly preferred. This makes it possible to form a dense protective film capable of protecting the light emitting element from moisture and the like while suppressing light absorption by the light emitting element.

The protective film is formed by the atomic deposition method as described above, and its form can be identified by cross-sectional observation using a SEM or the like. That is, it can be identified as a film formed in units of atomic layers. Specifically, the protective films are arranged adjacent to each other so that the atoms constituting the protective films do not have gaps that allow water molecules or the like to pass through. In addition, unlike sputtering, CVD, etc., in the ALD method, reaction components do not travel straight. It is formed. As a result, a high-quality protective film having substantially uniform film thickness and film quality can be obtained in any region.

A protective film can be formed, for example, by the following method.
First, a substrate having a light-emitting element mounted thereon is introduced into an atomic layer deposition apparatus. A mask or the like is preferably formed so that the back electrode is exposed from the protective film. Subsequently, trimethylaluminum (TMA) gas, for example, is introduced into the atomic layer deposition apparatus, and the OH groups on the surface of the substrate on which the light emitting element is mounted react with TMA. Excess gas is then exhausted. Thereafter, H ₂ O gas is introduced to react TMA, which has been bonded to the OH groups in the previous reaction, with H ₂ O. Excess gas is then exhausted.
By repeating the reaction of TMA, evacuation, reaction with OH group and evacuation as one cycle, a protective film of Al ₂ O ₃ having a predetermined thickness can be formed.

[Electronic parts]
The electronic parts include those involved in energizing the light emitting elements, those involved in driving the light emitting elements, and the like. Specifically, capacitors, varistors, zener diodes, bridge diodes, chip resistors, Melf resistors, protection elements such as electrostatic protection elements, temperature sensors such as thermistors, temperature compensation elements, various transistors, external power supply Examples include surface-mounted electronic components such as connectors. In particular, when a protective element such as a Zener diode is provided as an electronic component, it is possible to provide a high-performance light emitting device with improved reliability in energization and driving. Note that the electronic component may be flip-chip mounted on the substrate, or may be electrically connected with a wire or the like.

The electronic component may be mounted, for example, on the first main surface side of the substrate on which the light emitting element is mounted, or may be arranged on the second main surface side opposite to the first main surface.
When the electronic component is arranged on the first main surface side, the first main surface does not necessarily have to be arranged on the same surface as the surface on which the light emitting element is mounted. For example, the area where the electronic component is placed may be concave or convex, and the electronic component may be arranged in the concave or on the convex.

When the electronic components are arranged on the second main surface side, it is not necessary to secure an area for mounting the light emitting element and the electronic components on the first main surface of the base, so that the size of the light emitting device can be further reduced. . The second main surface may be planar, or may have concave portions or convex portions.
As shown in FIG. 3A, when the electronic component is placed on the bottom surface of the concave portion on the second main surface side, when the light emitting device is further mounted on another mounting board (for example, a circuit board or the like), the solder used for mounting is reduced. It is possible to prevent contamination, short circuit, etc. of electronic parts due to flux or the like. Also, as will be described later, it is easy to provide a covering member such as a resin for sealing the electronic component.

When the electronic component is arranged on the second main surface side of the base, it is preferable that the center of the electronic component is separated from the center of the light emitting element in the see-through plane of the base. Thereby, the heat dissipation of the light emitting device can be improved.

[Coating member]
As described above, the light-emitting device may include a covering member that seals the electronic component when the electronic component is housed in the recess on the second main surface side.

Examples of materials for the covering member include inorganic materials such as resin and glass.
Examples of resins include thermosetting resins, thermoplastic resins, modified resins thereof, hybrid resins containing one or more of these resins, and the like. Specifically, epoxy resin compositions, modified epoxy resin compositions (such as silicone-modified epoxy resins), silicone resin compositions, modified silicone resin compositions (such as epoxy-modified silicone resins), hybrid silicone resins, unsaturated polyester resins, polyimide resin composition, modified polyimide resin composition, polyamide resin, polyethylene terephthalate resin, polybutylene terephthalate resin, polycyclohexane terephthalate resin, polyphthalamide (PPA), polycarbonate resin, polyphenylene sulfide (PPS), liquid crystal polymer (LCP), Resins such as ABS resin, phenol resin, acrylic resin, PBT resin, urea resin, BT resin, and polyurethane resin can be used.
Examples of glass include borosilicate glass, quartz glass, sapphire glass, calcium fluoride glass, aluminoborosilicate glass, oxynitride glass, and chalcogenide glass.

[Sealing member]
The light-emitting device may have a sealing member that further seals the light-emitting element covered with the protective film. When the light emitting element and the electronic component are arranged on the first main surface of the base, the sealing member may seal not only the light emitting element but also the electronic component. The sealing member may directly cover the light emitting element and/or the protective element covered with the protective film, or may pass through gas, resin, or the like. It is easier to bond the sealing member to the protective film made of the above-mentioned material than to bond it to the substrate made of, for example, aluminum nitride. be able to.
By having the sealing member, a light-emitting device having desired characteristics can be formed. In addition, the light-emitting element can be sealed more reliably, and a more reliable light-emitting device can be obtained.

The sealing member can use the same material as the above-described covering member as a base material, and for example, plate-like glass or the like can be preferably used. The sealing member may contain a light-reflecting substance or a light-absorbing agent. Thereby, light resistance can be improved. Examples of ultraviolet absorbers include those commonly used in plastics, such as benzotriazole-based, benzophenone-based, and salicylate-based ones. Examples of light absorbers include ultraviolet absorbers and ultraviolet shielding agents. Specifically, titanium oxide, zinc oxide, zirconium oxide, potassium titanate, alumina, boron nitride, mullite, magnesium oxide, titanium dioxide, fibrous fillers (glass, glass fiber, wollastonite, etc.), inorganic fillers (nitriding aluminum, carbon, etc.).
The light-reflecting substance or light-absorbing agent is preferably contained, for example, in an amount of about 10 to 95% by weight with respect to the total weight of the base material.

In addition, the sealing member may contain a wavelength conversion member that converts the wavelength of light from the light emitting element. Thereby, a light-emitting device with a desired emission color can be formed.
As the wavelength conversion member, for example, a phosphor known in this field can be used. Specifically, cerium-activated yttrium aluminum garnet (YAG) phosphor, cerium-activated lutetium aluminum garnet (LAG), nitrogen-containing calcium aluminosilicate activated with europium and/or chromium (CaO—Al ₂ O ₃ —SiO ₂ ) based phosphors, europium-activated silicate ((Sr, Ba) ₂ SiO ₄ ) based phosphors, β-sialon phosphors, CASN or SCASN based phosphors, etc. material-based phosphors, KSF-based phosphors (K ₂ SiF ₆ :Mn), sulfide-based phosphors, and the like. The wavelength conversion member may be, for example, a light-emitting substance called so-called nanocrystal or quantum dot. Semiconductor materials can be used as these materials, and semiconductor materials include, for example, II-VI group, III-V group, and IV-VI group semiconductors, specifically CdSe, core-shell type CdS _x Se ₁ Nano-sized highly dispersed particles such as _-x /ZnS and GaP can be used.

A coating film may be formed on the surface of the sealing member for the purpose of antireflection or the like. As a result, the light emitted from the light emitting element can be efficiently extracted to the outside without being reflected by the sealing member.
The shape, thickness, etc. of the sealing member can be appropriately adjusted according to the intended size of the light-emitting device.

Hereinafter, embodiments according to the present invention will be described with reference to the drawings.

(Example 1)
FIG. 1A is a cross-sectional view of a light emitting device 9 according to Example 1 of the present invention. FIG. 1B is a top view of the light emitting device according to Example 1 of the present invention. Note that the top view is a view of the light emitting device viewed from the first main surface side of the base.
A light-emitting device 9 of Example 1 has a base 1 , a light-emitting element 3 , and a protective film 4 .
The substrate 1 is made of aluminum nitride, for example, and can be made into a flat plate shape with a thickness of about 0.4 mm. The substrate 1 can have a substantially square shape (for example, 1.375 mm×1.375 mm) when viewed from above, and has a wiring layer 2 on the first main surface 1a and a back electrode 2a on the second main surface 1b. The wiring layer 2 and the back electrode 2a are, for example, a copper layer having a thickness of about 30 μm, and are electrically connected.

As the light emitting element 3, for example, one having a semiconductor layer made of a nitride-based semiconductor and having an emission peak wavelength of about 375 nm can be used. The light-emitting element 3 of this embodiment has a substantially square shape (for example, 1.1 mm×1.1 mm) in plan view. The light emitting element 3 is flip-chip mounted on the first main surface 1a of the substrate 1 by using a bonding member 7 such as Au—Sn.

The light-emitting element 3 mounted on the substrate 1 is covered with the protective film 4 continuously from the entire surface to the first main surface 1a of the substrate 1 without gaps or discontinuities. That is, the protective film 4 is provided between the light emitting element 3 and the first main surface 1a of the substrate 1 (more specifically, on the electrode forming surface of the light emitting element 3, the side surface of the electrode, and the first main surface facing the electrode forming surface). ) is also provided. The protective film 4 constitutes the outer surface of the light emitting device 9 .
The protective film 4 is formed by an atomic deposition method and is dense enough to substantially completely prevent the penetration of moisture. For example, the protective film 4 can be made of aluminum oxide with a thickness of about 20 nm.

As described above, in Example 1, since the flat substrate 1 is used, absorption of light by the light emitting element 3 can be suppressed. Furthermore, the light emitting device 9 can be made small. Further, since the light emitting element 3 is flip-chip mounted, the size of the light emitting device 9 can be further reduced. Furthermore, since there is no need to perform a wire bonding process and no need to use materials such as wires, the cost can be reduced.

In addition, since the protective film 4 is formed by atomic deposition, and the light-emitting element 3 and the first main surface 1a of the substrate are continuously covered without gaps, the protective film 4 forms the outer surface of the light-emitting device 9 ( That is, the protective film 4 is the only member that seals the light-emitting element 3. The light-emitting device 9 can be formed with high reliability while having a small size and a simple structure.
In particular, in this embodiment, since the light emitting element 3 is flip-chip mounted, the semiconductor layer of the light emitting element 3 is arranged on the base 1 side. As a result, the deterioration of the light emitting element 3 due to the intrusion of moisture from the base 1 side may become remarkable. Deterioration can be effectively prevented.
In addition, since the protective film 4 can be made thin and uniform, the light absorption of the light emitting element 3 can be reduced while maintaining the protective function for the light emitting element 3 .

(Example 2)
FIG. 2A is a cross-sectional view of a light emitting device 19 according to Example 2 of the present invention. FIG. 2B is a top view of the light emitting device 19 according to Example 2 of the present invention.
In the light-emitting device 19 of Example 2, a protective element 8 (for example, 0.23 mm×0.23 mm in plan view), which is an electronic component, is mounted on the first main surface 1a side of the base 1 in addition to the light-emitting element 3. It has substantially the same configuration as the light emitting device 9 of the first embodiment except that The substrate 1 of the light emitting device 19 of this embodiment can be substantially rectangular (for example, 1.8 mm×1.375 mm) when viewed from above.
In this light emitting device 19 , the protective film 4 continuously covers the first main surface 1 a of the substrate 1 , the surface of the light emitting element 3 , and the surface of the protective element 8 . Therefore, the protective film 4 is also covered between the light emitting element 3 and the first main surface 1a and between the protective element 8 and the first main surface 1a.

In the light emitting device 19 of Example 1 as well, effects similar to those of the light emitting device 9 of Embodiment 1 can be obtained. Furthermore, by providing the protective element 8, it is possible to obtain a high-performance light emitting device 19 with improved reliability in energization and driving.

(Example 3)
FIG. 3A is a cross-sectional view of a light emitting device 29 according to Example 3 of the present invention. FIG. 3B is a bottom view of the light emitting device 29 according to Example 3 of the present invention. Note that the bottom view is a view of the light emitting device viewed from the second main surface side of the base.
In Example 3, the substrate 10 having a substantially square shape (for example, 1.375 mm×1.375 mm) in top view has a concave portion 10c in the approximate center of the second main surface 10b, and the bottom surface of the concave portion 10c has a pair of Wiring layer 2 is exposed. A protective element 8, which is an electronic component, is mounted on the bottom surface of the recess 10c. More specifically, the protection element 8 can be mounted on the wiring layer 2 on the bottom surface of the recess 10c with a bonding material such as silver paste. Moreover, the protective element 8 and the wiring layer 2 may be electrically connected by a wire 5 such as Au. The concave portion 10c is filled with a covering member 6 made of, for example, silicone resin, and the protective element 8 is sealed. The back surface electrode 2a is provided on the second main surface 10b other than the concave portion. The back surface electrode 2a of the present embodiment can be provided, for example, in a substantially U shape in plan view. It has substantially the same configuration as the light emitting device 9 of Example 1 except for the configuration described above.

With such a configuration, the protective element 8 is mounted on the second main surface 10b side, so the light emitting device 29 can be made more compact.
Further, since the second main surface 10b has the concave portion 10c, the concave portion 10c can be easily filled with the coating member 6 such as resin. In addition, the concave portion 10c and the covering member 6 prevent penetration of solder flux or the like used when mounting the light emitting device 29 on another mounting board (for example, a circuit board), thereby ensuring short-circuiting of the protective element 8. can be prevented.

(Example 4)
FIG. 4 is a bottom view of a light emitting device according to Example 4 of the present invention. In addition, the position of the light emitting element arranged on the first main surface side is indicated by a dotted line. In this light-emitting device, the concave portion 11c of the second main surface 11b of the base 11 is provided closer to the end of the base than the concave portion 10c shown in the third embodiment. That is, in the see-through plane of the base 11, the center of the protection element 8 mounted on the bottom surface of the recess 11c of the second main surface 11b is separated from the center of the light emitting element 3 mounted on the first main surface. Further, the back surface electrode 2b of the present embodiment can be provided, for example, in a substantially L shape in plan view. It has substantially the same configuration as the light emitting device 29 of the third embodiment except for the configuration described above.
With such a structure, the heat dissipation of the light emitting device can be improved.

(Example 5)
FIG. 5A is a perspective view of a light emitting device 39 according to Example 5 of the present invention. FIG. 5B is a top view of a light emitting device 39 according to Example 5 of the present invention.
A light-emitting device 39 of Example 5 includes a concave portion 12 c on the first main surface of the base 12 . A wiring layer 2 is provided on the bottom surface of the recess 12c, and a light-emitting element 3 and a protective element 8, which is an electronic component, are mounted thereon. The substrate 12 of this embodiment can be, for example, substantially square (eg, 3.5 mm×3.5 mm) when viewed from above.
The protective film 4 of Example 5 continuously covers the light emitting element 3 , the protective element 8 , and the first main surface of the base 12 . In this embodiment, the protective film 4 may be provided not only on the first main surface of the substrate 12 but also on the side surfaces and the upper surface of the sidewalls forming the recess 12c of the substrate 12 .

With such a configuration, the light emitting device 39 having a simple structure, high reliability, and capable of emitting light upward can be formed.

(Example 6)
FIG. 6 is a perspective view of a light emitting device 49 according to Example 6 of the present invention.
A light-emitting device 49 of Example 6 has substantially the same configuration as the light-emitting device 39 of Example 5, except that it has a sealing member 13 .
The sealing member 13 can be bonded onto the protective film 4 provided on the upper surface of the side wall of the recess 12c so as to seal the light emitting element 3 via helium gas or the like, for example.

This allows the light emitting device 49 to have a desired light distribution. Furthermore, since the light-emitting element 3 can be sealed more reliably, a highly reliable light-emitting device can be obtained.

The light emitting device according to the embodiment of the present invention includes a light source for curing printing ink, a light source for curing resin, a light source for exposure equipment, a projector, a light source for lighting, a light source for various indicators, a light source for vehicles, a light source for displays, and a liquid crystal backlight. It can be used for various light sources such as light sources for lights, traffic lights, automotive parts, and channel letters for signboards.

Reference Signs List 1, 10, 11, 12 substrate 1a first main surface 1b, 10b, 11b second main surface 10c, 11c, 12c concave portion 2 wiring layer 2a, 2b rear electrode 3 light emitting element 4 protective film 5 wire 6 covering member 7 joining member 8 protection element 9, 19, 29, 39, 49 light emitting device 13 sealing member

Claims (9)

a substrate having a wiring layer on the first main surface;
Having positive and negative electrodes on the same surface side of the semiconductor layer, a light-emitting element that is flip-chip mounted on the wiring layer and emits light having a wavelength in the ultraviolet region;
an electronic component arranged on the first main surface side of the base;
The light emitting element, the electronic component, and a protective film covering the first main surface of the base,
The protective film protects the light emitting elementpositive and negativeA light emission characterized in that the outer surface of the light emitting device is formed by continuously covering the surface of the light emitting element including the side surface of the electrode and the electrode forming surface, the electronic component, and the first main surface of the substrate. Device. 2. The light-emitting device according to claim 1, wherein the protective film covers the side surface of the electrode and the electrode-forming surface of the electronic component. 3. The light-emitting device according to claim 1, wherein the protective film is a multilayer film. 4. The light-emitting device according to claim 1, wherein the protective film has a thickness of 1 nm to 10 μm. The light-emitting device according to any one of claims 1 to 4, wherein the protective film is made of an inorganic material. The light emitting device according to any one of claims 1 to 5, wherein the protective film is made of aluminum oxide. 7. The light-emitting device according to claim 1, wherein the protective film continuously covers the light-emitting element and the wiring layer of the substrate. The light-emitting device according to any one of claims 1 to 7, wherein the substrate has a flat plate shape. The light-emitting device according to any one of claims 1 to 8, wherein the substrate is made of an inorganic material.

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