JP7148472B2 - Ceramic part and method for manufacturing ceramic part - Google Patents

Description

The present invention relates to ceramic parts.

Generally, a probe card having a large number of contact probes is used in the inspection process of semiconductor integrated circuits. A probe card is a component that conducts testing by bringing contact probes into contact with corresponding electrode pads of a semiconductor integrated circuit formed on a semiconductor wafer and establishing electrical continuity between the semiconductor integrated circuit and an external tester.

In a normal probe card, the contact probes themselves are conductive members, and insulating probe guides are used so that adjacent contact probes do not come into contact with each other. Although there are various properties required for the probe guide, workability suitable for microfabrication and high strength are required.

For example, a probe guide made of machinable ceramics containing boron nitride, zirconia oxide, and silicon nitride as main components has been devised (see Patent Document 1).

Japanese Patent No. 4400360

When a plurality of contact probes are brought into contact with corresponding electrode pads using the probe card described above, variations in the heights of the contact probes and electrode pads are absorbed, and the contact probes and electrode pads are reliably conducted. There is a need. Therefore, a process of pressing the contact probes against the electrode pads (so-called overdrive) is required, and a load is applied to the entire probe card.

In recent years, due to the increase in size of silicon wafers and the miniaturization of semiconductor integrated circuits, it is necessary to arrange a large number of contact probes at high density even in contact cards, and the load applied to contact cards tends to increase due to overdrive. . Therefore, the parts that make up the contact card are required to have properties that do not crack or deform even when subjected to a large load, while at the same time being required to be workable so that the contact probes can be arranged at high density.

The present invention has been made in view of these circumstances, and its object is to provide a new ceramic part that is suitable for parts constituting contact cards, for example, and that has both strength and workability. be.

In order to solve the above problems, a ceramic component according to one aspect of the present invention is a plate-shaped ceramic component containing silicon nitride and boron nitride, comprising a guide section having a plurality of through holes formed therein, and a plurality of through holes. a frame-shaped spacer portion protruding from the guide portion so as to surround the hole. The through holes are formed by laser processing.

According to this aspect, the through hole is formed at a predetermined position with high accuracy by laser processing.

The guide portion and the spacer portion may be one part having the same composition, and the concave portion surrounded by the spacer portion may be formed by counterbore processing. Accordingly, by forming the concave portion in one part, the guide portion having a thickness that allows the formation of the through hole can be formed.

The guide portion and spacer portion are made of a ceramic material containing 10 to 35% by mass of boron nitride, 20 to 90% by mass of silicon nitride, 0 to 35% by mass of aluminum oxide, and 0 to 70% by mass of zirconium oxide. may As a result, the amount of silicon nitride is increased to increase the strength of laser processing and parts, and the amount of boron nitride is adjusted to the extent that counterbore processing is possible. can be realized. Also, the coefficient of thermal expansion can be adjusted by adjusting the amount of oxide ceramics with large thermal expansion.

The ceramic material has a coefficient of thermal expansion of 1 to 6 [10 ^-6 / ° C.] at -50 to 200 ° C., a three-point bending strength (JIS R1601) of 600 [MPa] or more, and a Young's modulus of 200 [GPa]. ] or more. As a result, the ceramic part can be used as a high-strength part suitable for a probe guide for IC inspection and a test socket for package inspection.

The guide portion is made of a first ceramic material, and the spacer portion is made of a second ceramic material having a composition different from that of the first ceramic material. good. As a result, the guide portion and the spacer portion can be configured with suitable shapes and materials, respectively, so that it is possible to provide a new ceramic component that achieves both strength and workability at a higher level.

The guide portion is a first ceramic material containing 26 to 100% by mass of silicon nitride, 0 to 60% by mass of aluminum oxide, and 0 to 74% by mass of zirconium oxide, and the spacer portion is made of 10% by mass of boron nitride. A second ceramic material containing 25 to 90% by mass of one or more compounds selected from the group consisting of aluminum oxide, zirconium oxide, silicon nitride, silicon carbide and aluminum nitride in an amount of 25 to 90% by mass. . As a result, the guide section using the first ceramic material containing silicon nitride or zirconium oxide can achieve laser workability, high strength, and a thermal expansion coefficient similar to that of a wafer. On the other hand, the spacer portion using the second ceramic material containing a large amount of boron nitride, which has good machinability, can be easily processed into a frame shape.

The first ceramic material may have a coefficient of thermal expansion of 1 to 6 [10 ^-6 /°C] at -50 to 200°C and a three-point bending strength (JIS R1601) of 600 [MPa] or more. As a result, the ceramic part can be used as a high-strength part suitable for a probe guide for IC inspection and a test socket for package inspection.

The guide portion and the spacer portion may be joined with metal brazing, and the joint strength may be 100 [MPa] or more. As a result, the ceramic part can be used as a high-strength part suitable for a probe card or the like capable of burn-in testing for ICs and packages expected to be used in a high-temperature environment.

The thickness of the portion of the guide portion where the through hole is formed may be 0.5 mm or less. Thereby, a through hole having a desired shape can be formed with high accuracy by laser processing.

The through-hole may have a rectangular shape with one side of the opening being 50 μm or less. As a result, a fine probe with a rectangular cross section, which is easier to manufacture than a probe with a circular cross section, can be attached to the guide section.

Another aspect of the invention is a method of manufacturing a ceramic component. This method is a method for manufacturing a plate-like ceramic component containing silicon nitride and boron nitride, comprising steps of forming a recess in the center of the plate-like component by counterbore machining, and forming a plurality of through holes in the bottom of the recess. and forming by laser processing.

According to this aspect, through-holes can be formed at predetermined positions from a single part by counterbore machining and laser machining.

Yet another aspect of the present invention is also a method of manufacturing a ceramic component. This method is a method of manufacturing a plate-like ceramic component containing silicon nitride and boron nitride, comprising the steps of preparing a plate-like guide portion made of a first ceramic material containing silicon nitride; a step of preparing a frame-shaped spacer portion made of a second ceramic material, a step of joining the guide portion and the spacer portion, and forming a plurality of through holes by laser processing in an exposed portion of the guide portion surrounded by the spacer portion. and forming a.

According to this aspect, by separately preparing and joining a plurality of parts with different required properties, a new ceramic part can be manufactured that has both strength and workability.

Any combination of the above constituent elements, and conversion of expressions of the present invention between methods, devices, systems, etc. are also effective as aspects of the present invention. Any suitable combination of the above elements may also fall within the scope of the invention for which patent protection is sought by this patent application.

ADVANTAGE OF THE INVENTION According to this invention, the new ceramics part which balanced strength and workability moderately can be implement|achieved.

FIG. 4 is a schematic diagram showing how an IC chip is inspected by a probe card; 4 is a perspective view of a guide plate according to the first embodiment; FIG. FIG. 3 is a cross-sectional view taken along the line AA of FIG. 2; It is a schematic diagram for demonstrating a measuring method. It is a schematic diagram for demonstrating an ultrasonic pulse reflection method test. It is a schematic diagram for demonstrating a processing test method. FIG. 7(a) is a photograph of a test piece with laser machinability, and FIG. 7(b) is a photograph of a test piece without laser machinability. FIG. 8 is a perspective view of a guide plate according to a second embodiment; FIG. 5 is a cross-sectional view taken along the line BB of FIG. 4; It is a schematic diagram for demonstrating a four-point bending-strength test.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, the present invention will be described based on embodiments with reference to the drawings. The same or equivalent constituent elements, members, and processes shown in each drawing are denoted by the same reference numerals, and duplication of description will be omitted as appropriate. Moreover, the embodiments are illustrative rather than limiting the invention, and not all features and combinations thereof described in the embodiments are necessarily essential to the invention.

In the following description, a ceramic part suitable for a guide plate of a probe card for IC chip inspection will be described as an example. This ceramic part can also be applied to a test socket for package inspection.

A probe card for IC chip inspection has a ceramic part called a guide plate. FIG. 1 is a schematic diagram showing how an IC chip is inspected by a probe card. FIG. 1 mainly shows the vicinity including the guide plate. The guide plate has characteristics such as a coefficient of thermal expansion (burn-in test) that is similar to that of a silicon wafer, mechanical strength (flexural strength) that can withstand probe loads, and the ability to precisely machine a large number of through-holes through which micro probes pass. is required.

With the recent miniaturization of semiconductors, the through-holes of probe guides have also been miniaturized. As a result, the thickness that can be processed with fine through-holes is limited, so at least the thickness of the region where the through-holes of the probe guide are formed must be made thin. However, conventional machinable ceramics lack the strength of thin through-hole portions, and may not withstand the load during wafer inspection and may be damaged. On the other hand, silicon nitride, which is a high-strength material, is difficult to counterbore. Therefore, the same thin plate as the through-hole is used for the portions other than the through-hole. As a result, the rigidity as a part is insufficient, and the accuracy as an inspection device cannot be maintained due to deflection.

Therefore, the guide plate 10 according to the present embodiment is a plate-like ceramic component containing silicon nitride and boron nitride, and includes a guide portion 12 in which a plurality of through holes 12a are formed, and a guide portion 12 surrounding the plurality of through holes 12a. and a frame-shaped spacer portion 14 protruding from the guide portion 12 to the side opposite to the IC chip 16 .

A plurality of contact probes 18 arranged to penetrate through the through holes 12 a are provided so that their tips come into contact with a plurality of electrode pads 16 a provided on the surface of the IC chip 16 . The diameter of the contact probes 18 is, for example, approximately 10 to 100 μm, and the pitch W1 of the contact probes 18 is, for example, approximately 50 to 300 μm. Further, when the through hole 12a is circular, its diameter is, for example, about 20 to 200 μm, and when the through hole 12a is rectangular, its one side is, for example, about 20 to 200 μm.

(First embodiment)
FIG. 2 is a perspective view of the guide plate according to the first embodiment. FIG. 3 is a cross-sectional view taken along line AA of FIG. In the guide plate 20 shown in FIGS. 2 and 3, the guide portion 22 and the spacer portion 24 are one component having the same composition, and a concave portion 26 surrounded by the frame-shaped spacer portion 24 is formed by counterbore processing. As a result, by forming the concave portion 26 in one part in which the guide portion 22 and the spacer portion 24 are integrated, the guide portion 22 can be formed with a thickness that allows the through hole 22a to be formed.

In addition, a through hole 22a with high precision in shape and size is formed at a predetermined position on the bottom of the recess 26 by laser processing. Further, by forming the concave portion 26 in one component, the guide portion 22 can be formed with a thickness that allows the through hole 22a to be formed.

The inventors of the present application varied the composition of the guide plate having the above configuration and measured the strength and workability. The method for measuring each characteristic will be described below.

[Strength measurement method]
A bending test piece of 3 mm (thickness t) x 4 mm (width W) x 40 mm (length) prepared with the composition of each example and each comparative example was prepared and subjected to a three-point bending strength test (JIS R1601). FIG. 4 is a schematic diagram for explaining the measuring method. As shown in FIG. 4, the distance L between the _fulcrums is set to 30 mm, the load is increased in the direction of the arrow, and the maximum load P [N] when the test piece breaks is calculated based on the following formula. Ask for
Three-point bending strength σ _b3 [MPa]=(3×P×L)/(2wt ² ) (Formula 1)

[Young's modulus measurement method]
A test piece of 15 mm×15 mm×15 mm produced with the composition of each example and each comparative example was prepared and subjected to an ultrasonic pulse reflection method test (JIS R1602). FIG. 5 is a schematic diagram for explaining the ultrasonic pulse reflection method test. As shown in FIG. 5, the longitudinal wave velocity V _l [m/s], the transverse wave velocity V _t [m/s], and the bulk density ρ [kg /m ³ ], the elastic modulus (Young's modulus) is obtained by the ultrasonic pulse method based on the following equation.
Elastic modulus Ep [N/m ² ]=ρ×(3V _t ² ×V ₁ ² −4V _t ⁴ )/(V ₁ ² −V _t ² ) (Formula 2)

[Processing test method]
In the process of manufacturing the guide plate 20 according to the first embodiment, it is necessary to form openings (recesses) for forming through holes. For this reason, a certain degree of processing speed is required in counterbore processing using a cutting device, and machinability is judged based on whether or not a predetermined processing test is satisfied. FIG. 6 is a schematic diagram for explaining the processing test method. First, a flat test piece is prepared and machined with a carbide end mill 29 of φ2 mm to a depth of cut of 0.8 mm. After that, while cutting with a carbide end mill 29, feed 100 mm in the direction of the arrow. On the other hand, a test piece with poor machinability, insufficient machining, and shallow depth is regarded as no machinability (x).

[Laser processing]
In the process of manufacturing the guide plate 20 according to the first embodiment, it is necessary to form through holes in the guide portion by laser processing. Therefore, at least the guide portion must be made of a material having a composition that allows laser processing. The evaluation of laser processing was based on whether or not a square hole with high dimensional accuracy could be formed using a pulse laser. Specifically, nine square holes of 50×50 μm were formed in a test piece having a thickness of 0.3 mm by laser processing, and the shape and residue thereof were evaluated.

For laser processing, a known laser oscillator is used, for example, under the conditions of a laser wavelength of 1030 nm, a laser output of 50 W, a pulse energy of 250 μJ/P, a maximum repetition rate of 200 kHz, a pulse width of 8 to 10 ps, and a processing time of 30 seconds or less. processed. Regarding the processing accuracy, the positional accuracy of the square hole formed on the laser exit side (opposite side to the laser irradiation side) is in the range of ±2 μm with respect to the design coordinates. ○), and if it does not satisfy, it is judged as no laser processability (×). FIG. 7(a) is a photograph of a test piece with laser machinability, and FIG. 7(b) is a photograph of a test piece without laser machinability. FIG. 7(a) is a photograph of a test piece having the composition of Example 1-2, which will be described later, after laser processing, and FIG. 7(b) is a photograph of a test piece having the composition of Comparative Example 1-2, which will be described later. This is a photograph of laser processing to . The residue R shown in FIG. 7B is the material that is melted by the laser processing and remains in the hole without being evaporated (sublimated).

Table 1 shows the composition and characteristics of each ceramic material of Examples 1-1 to 1-10 and Comparative Examples 1-1 to 1-7.

As shown in Table 1, the ceramic material according to each example has a bending strength of 600 [MPa] or more and a Young's modulus of 200 [GPa] or more, and when used as a part of a guide plate, sufficient A strong guide plate is obtained. Further, the ceramic material according to each example has a thermal expansion coefficient of 1 to 6 [10 ^-6 /°C] at -50 to 200°C, and a thermal expansion coefficient close to that of a silicon wafer is obtained. In addition, the ceramic material according to each example has machinability for openings and laser processing for fine holes. Therefore, the ceramic parts according to each embodiment can be used as high-strength parts suitable for probe guides for IC chip inspection and test sockets for package inspection.

Thus, the guide portion and the spacer portion according to the first embodiment contain 10 to 35% by mass of boron nitride, 20 to 90% by mass of silicon nitride, 0 to 35% by mass of aluminum oxide, and 0% by mass of zirconium oxide. A ceramic material containing up to 70% by mass is preferred. As a result, the amount of silicon nitride is increased to increase the strength of laser processing and parts, and the amount of boron nitride is adjusted to the extent that counterbore processing is possible. can be realized.

On the other hand, the ceramic material according to Comparative Example 1-1 contains silicon nitride as much as 95% by mass, so although it has high strength, it lacks machinability. The ceramic material according to Comparative Example 1-2 contains a large amount of boron nitride at 40% by mass, and therefore has machinability but insufficient strength. Since the ceramic material according to Comparative Example 1-3 contains a large amount of zirconium oxide, it has a large coefficient of linear expansion of 7.3 [10 ^-6 /° C.], and contains only 10% by mass of silicon nitride, so it is not suitable for laser processing. no gender. The ceramic material according to Comparative Example 1-4 contains a relatively large amount of boron nitride of 35% by mass, but contains only 20% by mass of silicon nitride, so the strength is insufficient. The ceramic materials according to Comparative Examples 1-5 and 1-6 are also slightly insufficient in terms of strength. The bending strength of the ceramic materials according to Comparative Examples 1-7 is insufficient.

Further, the present embodiment can also be regarded as a method of manufacturing a plate-shaped ceramic component containing silicon nitride and boron nitride. This method includes the steps of forming a recess in the central portion of a plate-like component by spot facing, and forming a plurality of through holes in the bottom of the recess by laser processing. As a result, a through hole can be formed at a predetermined position from one rectangular parallelepiped part by counterbore processing and laser processing.

(Second embodiment)
FIG. 8 is a perspective view of a guide plate according to the second embodiment. 9 is a cross-sectional view taken along the line BB of FIG. 4. FIG. The guide plate 30 shown in FIGS. 8 and 9 includes a flat guide portion 32 made of a first ceramic material and a frame made of a second ceramic material different in composition from the first ceramic material. The spacer portion 34 having a shape is joined. A plurality of openings 36 may be formed in the spacer portion 34 . The guide portion 32 and the spacer portion 34 are bonded with a metal solder 37, and the bonding strength is preferably 100 [MPa] or more. The metal solder 37 is, for example, silver solder or aluminum solder. By using silver brazing for bonding, the guide plate 30 according to the present embodiment can be applied to a probe card used for inspection in an environment of 180° C. or higher, which causes a problem in heat resistance with resin.

Further, in the guide plate 30 according to the present embodiment, the opening 36 of the spacer 34 becomes a concave portion by joining the spacer 34 to the guide 32 . In this way, ceramic parts can be used as high-strength parts suitable for IC chips and packages that are expected to be used in high-temperature environments, such as probe cards capable of burn-in tests.

[Joint strength by 4-point bending strength test]
FIG. 10 is a schematic diagram for explaining a four-point bending strength test. A first ceramic material corresponding to the guide portion 32 (50 mm square × 20 mmt, composition of Example 2-5 described later) and a second ceramic material corresponding to the spacer portion 34 (50 mm square × 20 mmt, Example 2 described later -5 composition) are joined together with a sheet of metal solder 37 (Ag--Cu--Ti) interposed therebetween and a load (16 kPa) is applied to produce a joined body . After that, a bonding heat treatment was performed, and a rectangular parallelepiped specimen 40 having a predetermined shape (thickness 3 mm×width 4 mm×length 40 mm) was cut out from the bonded body 38 . With both ends of the test piece 40 supported from below, a load is applied from above to both regions sandwiching the brazing metal 37, and the bond strength is calculated from the load when the test piece 40 breaks.

The inventors of the present application varied the composition of the guide plate having the above configuration and measured the strength and workability. Table 2 shows the composition and characteristics of each ceramic material of Examples 2-1 to 2-15 and Comparative Examples 2-1 to 2-5.

As shown in Table 2, the spacer portion according to each example has machinability of the opening. On the other hand, the guide portion according to each example has a bending strength of 600 [MPa] or more and a Young's modulus of 200 [GPa] or more, and when used as a guide plate component, a guide plate with sufficient strength can be obtained. can get. Further, the guide portion according to each example has a thermal expansion coefficient of 1 to 6 [10 ^-6 /°C] at -50 to 200°C, which is close to that of a silicon wafer. In addition, there is laser workability of the guide portion and fine holes according to each example. Further, the bonding strength after bonding the spacer portion and the guide portion according to each example to each other is 100 [MPa] or more. Therefore, the spacer portion and the guide portion according to each embodiment can be used as high-strength components suitable for probe guides for IC chip inspection and test sockets for package inspection.

Thus, the spacer portion according to the second embodiment contains 10 to 75% by mass of boron nitride, and one or more compounds selected from the group consisting of aluminum oxide, zirconium oxide, silicon nitride, silicon carbide, and aluminum nitride. A ceramic material containing 25 to 90% by mass of is preferable. Further, the guide portion according to each example contains 26 to 100% by mass of silicon nitride, 0 to 60% by mass of aluminum oxide, and 0 to 74% by mass of zirconium oxide. As a result, the guide portion containing silicon nitride or zirconium oxide can achieve laser workability, high strength, and a thermal expansion coefficient similar to that of a wafer. On the other hand, the spacer portion containing a large amount of boron nitride, which has good machinability, can be easily processed into a frame shape. In this way, the guide portion and the spacer portion can be configured with suitable shapes and materials, respectively, so that a new ceramic component can be provided that has both strength and workability at a higher level.

On the other hand, the spacer portions according to Comparative Examples 2-1 and 2-2 have less boron nitride and more aluminum oxide, and therefore lack machinability of the opening. In Comparative Examples 2-3 and 2-4, the post-joining strength did not satisfy 100 [MPa]. The bending strength of the guide portion according to Comparative Example 2-5 is insufficient.

Moreover, this embodiment can be regarded as another method of manufacturing a plate-like ceramic part containing silicon nitride and boron nitride. This method includes the steps of preparing a plate-like guide portion made of a first ceramic material containing silicon nitride, preparing a frame-like spacer portion made of a second ceramic material containing boron nitride, The method includes a step of joining the guide portion and the spacer portion, and a step of forming a plurality of through holes by laser processing in the exposed portion of the guide portion surrounded by the spacer portion. As a result, by separately preparing and joining a plurality of parts with different required characteristics, it is possible to manufacture a new ceramic part that has both strength and workability.

The thickness of the portion of the probe card where the through hole is formed in the guide portion according to each of the above-described embodiments is preferably 0.5 mm or less. As a result, minute through-holes having a desired shape can be formed with high density and accuracy by laser processing. In other words, if the guide portion is thickened in order to increase the strength of the entire probe card, it becomes difficult to form minute through-holes at a high density by laser processing, so the strength is increased in portions other than the guide portion. Therefore, in the first embodiment, a composition was found that increases the strength of the probe card as a whole, allows the opening to be machined, and satisfies the laser processability. Further, in the second embodiment, a guide portion having a thickness that enables laser processing and a strength to some extent, and a frame-shaped component that reinforces the guide portion and a spacer having machinability of the opening portion. The desired characteristics of the probe card are realized by combining the part and the .

Further, the through-hole of the guide portion according to each of the above-described embodiments preferably has a rectangular shape with one side of the opening being 50 μm or less (see FIG. 7A). As a result, a minute probe with a rectangular cross section, which is easier to manufacture than a probe with a circular cross section, can be attached or inserted into the guide section.

In addition, the ceramic material according to each of the above-described embodiments contains carbon, silicon, the fourth period III to IVB group (for example, titanium), and the fifth period IVA to VB group in the periodic table with respect to 100% by mass of the ceramics as the main component. (e.g. molybdenum) and 0.05 to 5% by mass of an element and / or compound of one or more elements selected from the elements of Groups IVA to VIB of the 6th period (however, converted to a single element), black or gray be. This enables accurate measurement when the size, position, etc. of the through-hole are measured by image processing.

Although the present invention has been described with reference to the above-described embodiments and examples, the present invention is not limited to the above-described embodiments, and may be obtained by appropriately combining the configurations of the embodiments. and those substituted are also included in the present invention. In addition, it is also possible to appropriately rearrange the combination and the order of steps in each embodiment based on the knowledge of a person skilled in the art, and to add modifications such as various design changes to each embodiment. Embodiments in which is added may also be included in the scope of the present invention.

Reference Signs List 10 guide plate 12 guide portion 12a through hole 14 spacer portion 16 IC chip 16a electrode pad 18 contact probe 20 guide plate 22 guide portion 22a through hole 24 spacer portion 26 concave portion 30 guide plate , 32 guide portion, 34 spacer portion, 36 opening.

Claims (11)

A plate-shaped ceramic part containing silicon nitride and boron nitride,
a guide portion having a plurality of through holes;
a frame-shaped spacer portion protruding from the guide portion so as to surround the plurality of through holes;
The guide portion and the spacer portion are components having the same composition, and contain 10 to 35% by mass of boron nitride, 20 to 90% by mass of silicon nitride, 0 to 35% by mass of aluminum oxide, and 0 to 70% by mass of zirconium oxide. A ceramic part characterized in that it is a ceramic material contained in mass % . 2. The ceramic component according to claim 1 , wherein said guide portion and said spacer portion form a recess surrounded by said spacer portion. The ceramic material has a coefficient of thermal expansion of 1 to 6 [10-6 / ° C.] at -50 to 200 ° C., a three-point bending strength (JIS R1601) of 600 [MPa] or more, and a Young's modulus of 200 [ GPa] or more, the ceramic part according to claim 1 or 2 . A plate-shaped ceramic part containing silicon nitride and boron nitride,
a guide portion having a plurality of through holes;
a frame-shaped spacer portion protruding from the guide portion so as to surround the plurality of through holes;
The guide portion is made of a first ceramic material containing 20 to 90% by mass of silicon nitride,
The spacer portion is composed of a second ceramic material containing 20 to 90% by mass of silicon nitride and having a composition different from that of the first ceramic material,
A ceramic component, wherein the guide portion and the spacer portion are joined together. The guide portion is a first ceramic material containing 0 to 60% by mass of aluminum oxide and 0 to 74% by mass of zirconium oxide,
The spacer portion contains 10 to 75% by mass of boron nitride and 25 to 90% by mass of one or more compounds selected from the group consisting of aluminum oxide, zirconium oxide, silicon nitride, silicon carbide and aluminum nitride. 2, which is a ceramic material,
5. The ceramic part according to claim 4 , characterized in that: The first ceramic material has a coefficient of thermal expansion of 1 to 6 [10-6 / ° C.] at -50 to 200 ° C., and a three-point bending strength (JIS R1601) of 600 [MPa] or more. The ceramic part according to claim 5 , wherein 7. The ceramic component according to claim 4 , wherein said guide portion and said spacer portion are joined with metal solder, and the joint strength is 100 [MPa] or more. 8. The ceramic component according to any one of claims 1 to 7 , wherein the thickness of the portion of the guide portion where the through hole is formed is 0.5 mm or less. 9. The ceramic component according to any one of claims 1 to 8 , wherein the through hole has a rectangular shape with one side of the opening being 50 [mu]m or less. A method for manufacturing a plate-shaped ceramic part containing silicon nitride and boron nitride,
a step of forming a concave portion in the central portion of the plate-like component by counterbore processing;
forming a plurality of through-holes in the bottom of the recess by laser processing ;
The plate-shaped part is a ceramic material containing 10 to 35% by mass of boron nitride, 20 to 90% by mass of silicon nitride, 0 to 35% by mass of aluminum oxide, and 0 to 70% by mass of zirconium oxide. A method for manufacturing a ceramic part, characterized by: A method for manufacturing a plate-shaped ceramic part containing silicon nitride and boron nitride,
a step of preparing a plate-like guide portion made of a first ceramic material containing silicon nitride;
A step of preparing a frame-shaped spacer portion made of a second ceramic material different in composition from the first ceramic material containing 20 to 90% by mass of boron nitride;
joining the guide portion and the spacer portion;
forming a plurality of through-holes by laser processing in the exposed portion of the guide portion surrounded by the spacer portion;
A method for manufacturing a ceramic part, comprising:

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