JP7144982B2 - Substrate processing equipment - Google Patents

Description

Exemplary embodiments of the present disclosure relate to substrate processing apparatus.

Patent Literature 1 discloses a substrate processing apparatus that includes a ring-shaped cover member arranged to face the peripheral edge of a substrate held by a substrate holding portion, and a heater for heating the cover member. . When the heater heats the cover member, droplets adhering to the cover member are vaporized, thereby suppressing the generation of particles.

JP 2015-216224 A

The present disclosure describes a substrate processing apparatus capable of suppressing adhesion of droplets to a cover member due to splashing of liquid from a substrate.

A substrate processing apparatus according to one exemplary embodiment includes a holding unit configured to hold and rotate a substrate, a processing liquid supply unit configured to supply a processing liquid to the substrate from a nozzle, and a substrate. and a control unit. The cover part includes a cover member that extends arcuately or annularly along the peripheral edge of the substrate held by the holding part so as to face the peripheral edge. The cover member includes a notch that opens toward the center of the substrate so as to form a space that can accommodate the nozzle. The control unit performs processing for controlling the cover unit so as to change the separation distance in the circumferential direction of the substrate between the ejection port of the nozzle and the opening end of the notch.

According to the substrate processing apparatus according to one exemplary embodiment, it is possible to suppress adhesion of liquid droplets to the cover member due to liquid splashing from the substrate.

FIG. 1 is a plan view showing a substrate processing system. FIG. 2 is a block diagram schematically showing the substrate processing apparatus. FIG. 3 is a top view showing an example of a processing unit. 4 is a cross-sectional view taken along line IV-IV of FIG. 3. FIG. FIG. 5 is a perspective view of an example of the cover member as seen from below. FIG. 6 is a diagram showing an example of the cover member as seen from the inside. FIG. 7 is a diagram for explaining the operation of the cover member. FIG. 8 is a diagram for explaining the cleaning process of the cover member. FIG. 9 is a top view showing another example of the processing unit. FIG. 10 is a diagram showing another example of the cover member viewed from the inside. FIG. 11 is a diagram showing another example of the cover member viewed from the inside. FIG. 12 is a cross-sectional view of another example of the processing unit cut in the same manner as in FIG.

Various exemplary embodiments are described in more detail below with reference to the drawings. In the following description, the same reference numerals will be used for the same elements or elements having the same functions, and redundant description will be omitted.

[Configuration of substrate processing system]
FIG. 1 is a diagram showing a schematic configuration of a substrate processing system according to this embodiment. Hereinafter, in order to clarify the positional relationship, the X-axis, Y-axis and Z-axis are defined to be orthogonal to each other, and the positive direction of the Z-axis is defined as the vertically upward direction.

As shown in FIG. 1, the substrate processing system 1 includes a loading/unloading station 2 and a processing station 3 . The loading/unloading station 2 and the processing station 3 are provided adjacently.

The loading/unloading station 2 includes a carrier placement section 11 and a transport section 12 . A plurality of carriers C for accommodating a plurality of substrates, in this embodiment, semiconductor wafers (hereinafter referred to as wafers W) in a horizontal state are mounted on the carrier mounting portion 11 .

The transfer section 12 is provided adjacent to the carrier mounting section 11 and includes a substrate transfer device 13 and a transfer section 14 therein. The substrate transfer device 13 includes a wafer holding mechanism that holds the wafer W. As shown in FIG. In addition, the substrate transfer device 13 can move in the horizontal direction and the vertical direction and can rotate around the vertical axis, and transfers the wafer W between the carrier C and the transfer section 14 using the wafer holding mechanism. conduct.

The processing station 3 is provided adjacent to the transport section 12 . The processing station 3 comprises a transport section 15 and a plurality of processing units 16 . A plurality of processing units 16 are arranged side by side on both sides of the transport section 15 .

The transport unit 15 includes a substrate transport device 17 inside. The substrate transfer device 17 has a wafer holding mechanism for holding the wafer W. As shown in FIG. In addition, the substrate transfer device 17 can move in the horizontal direction and the vertical direction and can rotate about the vertical axis, and transfers the wafer W between the transfer section 14 and the processing unit 16 using the wafer holding mechanism. I do.

The processing unit 16 performs predetermined substrate processing on the wafer W transferred by the substrate transfer device 17 .

The substrate processing system 1 also includes a control device 4 . Control device 4 is, for example, a computer, and includes control unit 18 and storage unit 19 . The storage unit 19 stores programs for controlling various processes executed in the substrate processing system 1 . The control unit 18 controls the operation of the substrate processing system 1 by reading and executing programs stored in the storage unit 19 .

The program may be recorded in a computer-readable storage medium and installed in the storage unit 19 of the control device 4 from the storage medium. Examples of computer-readable storage media include hard disks (HD), flexible disks (FD), compact disks (CD), magnet optical disks (MO), and memory cards.

In the substrate processing system 1 configured as described above, first, the substrate transfer device 13 of the loading/unloading station 2 takes out the wafer W from the carrier C placed on the carrier platform 11, and receives the taken out wafer W. It is placed on the transfer section 14 . The wafer W placed on the transfer section 14 is taken out from the transfer section 14 by the substrate transfer device 17 of the processing station 3 and carried into the processing unit 16 .

The wafer W loaded into the processing unit 16 is processed by the processing unit 16 , then unloaded from the processing unit 16 by the substrate transfer device 17 and placed on the delivery section 14 . Then, the processed wafer W placed on the transfer section 14 is returned to the carrier C on the carrier placement section 11 by the substrate transfer device 13 .

[Configuration of substrate processing apparatus]
Next, the configuration of the substrate processing apparatus 10 included in the substrate processing system 1 will be described with reference to FIGS. 2 to 6. FIG. The substrate processing apparatus 10 processes, for example, a wafer W (substrate) having a film (not shown) formed on its surface Wa, and removes the film from the peripheral edge portion Wc (portion near the peripheral edge) of the wafer W. you can go

The wafer W may have a disk shape, or may have a plate shape such as a polygonal shape other than a circular shape. The wafer W may have a cutout portion that is partially cut out. The notch may be, for example, a notch (a U-shaped, V-shaped groove, etc.) or a linear portion extending linearly (so-called orientation flat). The wafer W may be, for example, a semiconductor substrate, a glass substrate, a mask substrate, an FPD (Flat Panel Display) substrate, or other various substrates. The diameter of the wafer W may be, for example, approximately 200 mm to 450 mm. Specific examples of the film include TiN film, Al film, tungsten film, SiN film, SiO ₂ film, polysilicon film, thermal oxide film (Th-Ox), and the like.

The substrate processing apparatus 10, as shown in FIG. 2, includes a processing unit 16 and a control device 4 for controlling it. The processing unit 16 includes a rotary holder 21 , a blower B, liquid supply sections 22 to 25 , a cup 26 and a cover section 27 .

The rotation holding part 21 (holding part) is configured to hold the wafer W and rotate it. Specifically, the rotation holding unit 21 operates based on an operation signal from the control device 4, and holds the center portion of the wafer W substantially horizontally by, for example, vacuum suction. Rotate the wafer W around the axis Ax.

The blower B (airflow forming section) is configured to operate based on an operation signal from the control device 4 and form a downflow inside the processing unit 16 .

The liquid supply unit 22 (processing liquid supply unit) is positioned on the peripheral edge Wc of the wafer W at a predetermined processing position (on the left side of the spin holder 21 and above the peripheral edge Wc of the wafer W in FIG. 2). It is configured to supply a chemical liquid (processing liquid) and a rinse liquid (processing liquid) from. The liquid supply unit 22 includes a chemical liquid source 22a, a rinse liquid source 22b, a nozzle unit 22c holding nozzles N1 and N2, and a driving mechanism 22d.

The chemical liquid source 22a operates based on an operation signal from the control device 4, and supplies a chemical liquid for dissolving the film to the nozzle N1. The chemical liquid is discharged from the discharge port of the nozzle N1 onto the surface Wa of the wafer W and toward the peripheral edge Wc. More specifically, as shown in FIGS. 4 and 6, the ejection port of the nozzle N1 may face the peripheral edge side of the wafer W or face the wafer W in the circumferential direction. The chemical solution source 22a may include, for example, a chemical solution tank (not shown), a pump for pumping the chemical solution from the chemical solution tank, and a valve for controlling ON/OFF of the flow of the chemical solution.

Examples of the chemical solution include an alkaline chemical solution and an acidic chemical solution. Alkaline chemicals include, for example, SC-1 liquid (a mixture of ammonia, hydrogen peroxide and pure water), hydrogen peroxide solution, and the like. Examples of acidic chemical solutions include SC-2 solution (mixture of hydrochloric acid, hydrogen peroxide and pure water), HF solution (hydrofluoric acid), DHF solution (dilute hydrofluoric acid), HNO ₃ +HF solution (nitric acid and hydrofluoric acid), (mixture of) and the like.

The rinse liquid source 22b, as shown in FIG. 2, operates based on an operation signal from the control device 4, and supplies the nozzle N2 with a rinse liquid for washing away the chemical solution and dissolved components of the film. The rinsing liquid is discharged from the outlet of the nozzle N2 onto the surface Wa of the wafer W and toward the peripheral edge Wc. More specifically, as shown in FIGS. 4 and 6, the ejection port of the nozzle N2 may face the peripheral edge side of the wafer W, or may face the wafer W in the circumferential direction. The rinse liquid source 22b may include, for example, a rinse liquid tank (not shown), a pump that pumps the rinse liquid from the rinse liquid tank, and a valve that controls ON/OFF of the flow of the rinse liquid.

Examples of the rinsing liquid include pure water (DIW: deionized water).

As shown in FIG. 2, the drive mechanism 22d operates based on an operation signal from the controller 4 to move the nozzle unit 22c in the horizontal direction (the radial direction of the wafer W).

The liquid supply unit 23 supplies the chemical liquid and the rinse liquid to the peripheral edge Wc of the wafer W from the surface Wa side at a predetermined processing position (on the right side of the rotary holding unit 21 and above the peripheral edge Wc of the wafer W in FIG. 2). configured to supply The liquid supply unit 23 includes a chemical liquid source 23a, a rinse liquid source 23b, a nozzle unit 23c holding nozzles N3 and N4, and a drive mechanism 23d. Since these configurations are the same as those of the liquid supply unit 22, description thereof is omitted.

The liquid supply unit 24 supplies the chemical liquid and the rinse liquid to the peripheral edge portion Wc of the wafer W from the rear surface Wb side at a predetermined processing position (on the left side of the rotary holding unit 21 and below the peripheral edge portion Wc of the wafer W in FIG. 2). configured to supply The liquid supply unit 24 includes a chemical liquid source 24a, a rinse liquid source 24b, and nozzles N5 and N6.

The chemical liquid source 24a operates based on an operation signal from the control device 4, and supplies a chemical liquid for dissolving the film to the nozzle N5 (chemical liquid nozzle). Therefore, the chemical liquid is discharged to the rear surface Wb side of the wafer W from the nozzle N5. More specifically, as shown in FIGS. 3 and 4, the outlet of the nozzle N3 may face vertically upward. The chemical solution source 24a may include, for example, a chemical solution tank (not shown), a pump for pumping the chemical solution from the chemical solution tank, and a valve for controlling ON/OFF of the flow of the chemical solution.

The rinse liquid source 24b (rinse liquid supply unit), as shown in FIG. liquid supply unit). Therefore, the rinse liquid is discharged to the rear surface Wb side of the wafer W from the nozzle N6. More specifically, as shown in FIGS. 3 and 4, the outlet of the nozzle N4 may face vertically upward. The rinse liquid source 24b may include, for example, a rinse liquid tank (not shown), a pump that pumps the rinse liquid from the rinse liquid tank, and a valve that controls ON/OFF of the flow of the rinse liquid.

The liquid supply unit 25 supplies the chemical liquid and the rinse liquid to the peripheral edge portion Wc of the wafer W from the rear surface Wb side at a predetermined processing position (on the right side of the spin holder 21 and below the peripheral edge portion Wc of the wafer W in FIG. 2). configured to supply The liquid supply section 25 includes a chemical liquid source 25a, a rinse liquid source 25b (rinse liquid supply section), a nozzle N7, and a nozzle N8 (rinse liquid supply section). Since these configurations are the same as those of the liquid supply section 24, the description thereof is omitted.

The cup 26 has a function of receiving the chemical liquid and rinse liquid supplied from the liquid supply units 22 to 25 (nozzles N1 to N8). A drain pipe and an exhaust pipe are connected to the bottom wall of the cup 26, respectively. The liquid received by the cup 26 is discharged to the outside of the processing unit 16 through the drain pipe. On the other hand, when the downflow generated by the blower B hits the surface Wa of the wafer W, it flows from the central portion of the wafer W toward the peripheral portion Wc, reaches the cup 26, and is discharged to the outside of the processing unit 16 through the exhaust pipe. be.

The cover portion 27 is arranged above the wafer W held by the rotary holding portion 21, as shown in FIGS. The cover portion 27 has an annular shape (for example, an annular shape) or an arc shape (for example, an arc shape) as a whole. The cover portion 27 has a function of rectifying the downflow formed by the blower B so that it flows from the central portion of the wafer W toward the peripheral portion Wc. As shown in FIG. 4, the cover portion 27 includes a support 27a, a cover member 27b, a thrust bearing 27c, and a drive mechanism 27d.

The support 27a is configured to support the outer peripheral portion of the cover member 27b from below. An elevating mechanism (not shown) is connected to the support 27a, and the entire cover 27 may be configured to move up and down when the wafer W is carried in and out of the rotation holding unit 21. FIG.

The cover member 27b includes an outer peripheral portion 27b- ₁ supported by the support 27a and an inner peripheral portion 27b- ₂ projecting downward from the outer peripheral portion 27b- ₁ . When the cover portion 27 is lowered and the cover member 27b approaches the wafer W, the inner peripheral portion _27b2 faces the peripheral edge portion Wc of the wafer W. As shown in FIG. A gap G between the lower surface S of the inner peripheral portion 27b ₂ and the front surface Wa of the wafer W may be set to, for example, about 0.5 mm to 3 mm.

Here, there is a tendency that the smaller the gap G is, the faster the airflow (downflow) passing through the gap G toward the peripheral side of the wafer W becomes. As the flow velocity increases, the liquid ejected onto the wafer W tends to move toward the outer edge of the wafer W along with the airflow.

As shown in FIGS. 3 to 6, the cover member 27b is provided with notches 27e and 27f. The notches 27e and 27f are formed by notching the inner peripheral portion _27b2 so as to open toward the central portion of the wafer W when viewed from above. The nozzle unit 22c is arranged inside the notch 27e. That is, the notch 27e constitutes a space capable of accommodating the nozzle unit 22c (nozzles N1, N2). Similarly, the nozzle unit 23c is arranged inside the notch 27f. That is, the notch 27f constitutes a space that can accommodate the nozzle unit 23c (nozzles N3, N4).

As shown in FIGS. 3, 5 and 6, in the circumferential direction of the wafer W, the nozzle unit 22c (nozzles N1, N2) and the opening end E1 of the notch 27e are spaced apart by a separation distance D1. . The separation distance D1 can be appropriately set as described later, and may be set to approximately 5 mm to 50 mm, for example. The separation distance D1 may be the distance in the circumferential direction of the wafer W between the nozzle unit 22c and the opening end E1 of the notch 27e downstream of the nozzle unit 22c in the rotation direction of the wafer W.

Similarly, in the circumferential direction of the wafer W, the nozzle unit 23c (nozzles N3, N4) and the opening end E2 of the notch 27f are separated from each other by a separation distance D2. The separation distance D2 can be appropriately set as described later, and may be set to approximately 5 mm to 50 mm, for example. The separation distance D2 may be the distance in the circumferential direction of the wafer W between the nozzle unit 23c and the opening end E2 of the notch 27f on the downstream side in the rotation direction of the wafer W from the nozzle unit 23c.

The thrust bearing 27c, as shown in FIG. 4, is arranged between the support 27a and the outer peripheral portion _27b1 of the cover member 27b. The thrust bearing 27c supports the cover member 27b rotatably around the rotation axis Ax with respect to the support 27a. The thrust bearing 27c may be a ball bearing, a roller bearing, a slide bearing, or a fluid bearing.

The driving mechanism 27d is configured to operate based on an operation signal from the control device 4 and rotate the cover member 27b (see arrows Ar1 and Ar2 in FIG. 5). 27 d of drive mechanisms may transmit the rotational force of an actuator (motor etc.) to the cover member 27b, for example via a gear. The drive mechanism 27d may, for example, convert the reciprocating motion of an actuator (such as a piston) into a rotational force via a link mechanism and transmit the rotational force to the cover member 27b. 27 d of drive mechanisms may produce rotation to the cover member 27b by magnetic force, for example.

[Configuration of control unit]
As shown in FIG. 2, the control unit 18 includes a processing unit 18a and an instruction unit 18b as functional modules. The processing unit 18a processes various data. The processing section 18a generates an operation signal for operating each section of the processing unit 16 based on a program stored in the storage section 19 by reading from the recording medium RM, for example. The instruction unit 18b transmits the operation signal generated by the processing unit 18a to each unit. As used herein, computer-readable recording media include non-transitory computer recording media (e.g., various main storage devices or auxiliary storage devices) and transitory computer recording media. ) (eg, a data signal that can be provided over a network).

Although the substrate processing apparatus 10 includes one controller 4 in the present embodiment, it may include a controller group (control section) including a plurality of controllers 4 . When the substrate processing apparatus 10 includes a controller group, each of the above functional modules may be implemented by one control device 4, or may be implemented by a combination of two or more control devices 4. good too. When the control device 4 is composed of a plurality of computers (circuits), each of the above functional modules may be realized by one computer (circuit), or may be realized by two or more computers (circuits). It may be realized by a combination. The controller 4 may have multiple processors. In this case, each of the above functional modules may be implemented by one processor, or may be implemented by a combination of two or more processors.

[Wafer processing method]
Next, a method of processing the wafer W by the processing unit 16 will be described with reference to FIGS. 7 and 8. FIG. First, the control device 4 controls the spin holder 21 to hold the wafer W on the spin holder 21 .

Next, the control device 4 controls the rotation holding unit 21 to rotate the wafer W clockwise (see arrow CW1 in FIG. 3) at a predetermined number of rotations when viewed from above. In this state, the control device 4 controls the liquid supply units 22 and 24 to supply the chemical liquid from the nozzle N1 to the front surface Wa of the wafer W and to the peripheral portion Wc, and from the nozzle N5 to the rear surface Wb of the wafer W and A chemical solution is supplied to the peripheral portion Wc. Next, the controller 4 controls the liquid supply units 22 and 24 to supply the rinse liquid from the nozzle N2 to the front surface Wa of the wafer W and to the peripheral edge Wc, and to supply the rinse liquid to the rear surface Wb of the wafer W from the nozzle N6. The rinsing liquid is supplied to the peripheral portion Wc.

During the supply of these chemicals and rinsing liquid, the control device 4 controls the drive mechanism 27d so that the separation distance D1 becomes relatively large and the separation distance D2 becomes relatively wide, as shown in FIG. 7(a). Alternatively, the cover member 27b may be rotated so that the width becomes narrower. In this case, even if the liquid ejected from the nozzles N1 and N2 splashes on the surface Wa of the wafer W, the opening end E1 of the notch 27e positioned downstream of the nozzles N1 and N2 is separated from the nozzles N1 and N2. Therefore, it is difficult for the liquid to adhere to the cover member 27b.

The controller 4 controls the rotation holding unit 21 to rotate the wafer W at a predetermined rotation speed counterclockwise when viewed from above (see arrow CW2 in FIG. 3). In this state, the control device 4 controls the liquid supply units 23 and 25 to supply the chemical liquid from the nozzle N3 to the front surface Wa of the wafer W and to the peripheral portion Wc, and from the nozzle N7 to the rear surface Wb of the wafer W and A chemical solution is supplied to the peripheral portion Wc. Next, the controller 4 controls the liquid supply units 23 and 25 to supply the rinse liquid from the nozzle N4 to the front surface Wa of the wafer W and to the peripheral edge Wc, and to supply the rinse liquid to the rear surface Wb of the wafer W from the nozzle N8. The rinsing liquid is supplied to the peripheral portion Wc.

During the supply of these chemicals and rinsing liquid, the control device 4 controls the drive mechanism 27d so that the separation distance D2 becomes relatively wide and the separation distance D1 becomes relatively wide, as shown in FIG. 7(b). Alternatively, the cover member 27b may be rotated so that the width becomes narrower. In this case, even if the liquid ejected from the nozzles N3 and N4 splashes on the surface Wa of the wafer W, the opening end E2 of the notch 27f located downstream of the nozzles N3 and N4 is separated from the nozzles N3 and N4. Therefore, it is difficult for the liquid to adhere to the cover member 27b.

After that, the control device 4 may perform a process of supplying the rinse liquid to the cover member 27b. Specifically, after the wafer W is unloaded, the controller 4 controls the drive mechanism 27d to rotate the cover member 27b. In this state, the control device 4 may control the liquid supply units 24 and 25 to supply the rinse liquid from the nozzles N6 and N8 toward the lower portion of the cover member 27b. At this time, the nozzle units 22c and 23c may be moved outside the notches 27e and 27f so that the rinse liquid is not discharged to the nozzle units 22c and 23c. For example, the control device 4 may control the driving mechanism 22d to move the nozzle unit 22c inward in the radial direction so that the nozzle unit 22c is positioned closer to the rotation holding portion 21 than the notch portion 27e (see FIG. 8). Similarly, the control device 4 may control the drive mechanism 23d to move the nozzle unit 23c inward in the radial direction so that the nozzle unit 23c is located closer to the rotation holding portion 21 than the notch portion 27f.

[Action]
In the above embodiment, the separation distances D1 and D2 can be changed arbitrarily. Therefore, by appropriately setting the separation distances D1 and D2 according to the liquid splashing conditions that vary depending on the type of liquid, the type of the wafer W, and the like, the liquid splashed from the wafer W adheres to the cover member 27b. becomes difficult. Therefore, it is possible to suppress adhesion of liquid droplets to the cover member 27b due to liquid splashing from the wafer W. FIG.

In the above embodiment, the separation distances D1 and D2 are arbitrarily changed by rotating the cover member 27b with respect to the support member 27a based on the instruction from the control device 4. FIG. Therefore, it is possible to change the separation distances D1 and D2 with a simple configuration.

In the above embodiment, after the wafer W is unloaded from the processing unit 16, the rinsing liquid can be supplied to the rotating cover member 27b. In this case, even if droplets adhere to the cover member 27b, the droplets are washed away by the rinse liquid. Therefore, it is suppressed that the liquid droplets adhering to the cover member 27b drop onto the wafer W unexpectedly. Further, it is possible to suppress the droplets adhering to the cover member 27b from being crystallized after being dried and scattering to the substrate as particles.

[Modification]
It should be considered that the embodiments disclosed this time are illustrative in all respects and not restrictive. The embodiments described above may be omitted, substituted, or modified in various ways without departing from the scope and spirit of the appended claims.

(1) As shown in FIGS. 9 and 10, the cover portion 27 may include a shutter portion 28 configured to open and close the opening of the notch portion 27e. As shown in FIGS. 9 and 10, the cover portion 27 may further include a shutter portion 28 configured to open and close the opening of the notch portion 27f. The shutter section 28 may include, for example, a shutter member 28a and a drive mechanism 28b. As shown in FIGS. 9 and 10, the cover portion 27 may further include a shutter portion 29 configured to open and close the opening of the notch portion 27f. The shutter section 29, like the shutter section 28, may include a shutter member 29a and a drive mechanism 29b. Since the structure of the shutter section 29 is the same as that of the shutter section 28, the shutter section 28 will be mainly described below, and the description of the shutter section 29 will be omitted.

The shutter member 28a is arranged near the opening of the notch 27e. The shutter member 28a has an arc shape along the circumferential direction of the cover member 27b. The shutter member 28a may be located on the inner peripheral surface side of the cover member 27b, as shown in FIGS. The shutter member 28a may be attached so as to be nested with respect to the inner peripheral portion _27b2 of the cover member 27b. That is, the shutter member 28a may be constructed so as to be able to expand and contract with respect to the inner peripheral portion _27b2 .

The drive mechanism 28b is configured to move the shutter member 28a along the circumferential direction of the cover member 27b (see arrows Ar3 and Ar4 in FIG. 10). That is, the drive mechanism 28b is configured to open and close the opening of the notch 27e or the notch 27f by sliding the shutter member 28a with respect to the opening.

When the shutter member 28a is positioned closer to the nozzle unit 22c than the cover member 27b, that is, when the shutter member 28a overlaps at least a portion of the notch 27e, the opening of the notch 27e is narrowed by the shutter member 28a. be done. Therefore, the edge of the shutter member 28a closer to the nozzle unit 22c functions as the opening end E1 of the notch 27e. On the other hand, when the shutter member 28a does not overlap the notch 27e, the opening of the notch 27e is not narrowed by the shutter member 28a and is completely opened. Therefore, the edge of the notch 27e itself functions as the opening end E1 of the notch 27e.

Similarly, when the shutter member 29a is positioned closer to the nozzle unit 23c than the cover member 27b, that is, when the shutter member 29a overlaps at least a portion of the notch 27f, the opening of the notch 27f is the shutter member. narrowed by 29a. Therefore, the edge of the shutter member 29a closer to the nozzle unit 23c functions as the opening end E2 of the notch 27f. On the other hand, when the shutter member 29a does not overlap the notch 27f, the opening of the notch 27f is not narrowed by the shutter member 29a and is completely opened. Therefore, the edge of the notch 27f itself functions as the opening end E2 of the notch 27f.

According to Modification 1, it is possible to change the separation distances D1 and D2 with a simple configuration.

(2) As shown in FIG. 11, the drive mechanism 28b may move the shutter member 28a up and down. That is, when the shutter member 28a is lowered, the opening of the notch 27e is partially or wholly closed by the shutter member 28a. Therefore, the edge of the shutter member 28a closer to the nozzle unit 22c functions as the opening end E1 of the notch 27e. On the other hand, when the shutter member 28a is raised, the shutter member 28a does not overlap the notch 27e. Therefore, the opening of the notch 27e is not narrowed by the shutter member 28a and is completely opened. Therefore, the edge of the notch 27e itself functions as the opening end E1 of the notch 27e.

The drive mechanism 29b may also move the shutter member 29a up and down like the drive mechanism 28b. That is, when the shutter member 29a is lowered, the opening of the notch 27f is partially or wholly closed by the shutter member 29a. Therefore, the edge of the shutter member 29a closer to the nozzle unit 23c functions as the opening end E2 of the notch 27f. On the other hand, when the shutter member 29a is raised, the shutter member 29a does not overlap the notch 27f. Therefore, the opening of the notch 27f is not narrowed by the shutter member 29a and is completely opened. Therefore, the edge of the notch 27f itself functions as the opening end E2 of the notch 27f.

Also in Modification 2, it is possible to change the separation distances D1 and D2 with a simple configuration.

(3) Depending on the surface state of the wafer W (eg, roughness, hydrophilicity, etc.), liquid splashing may or may not occur easily. That is, the larger the surface roughness (for example, the arithmetic mean roughness Ra) of the wafer W, the more likely liquid splashing occurs. The lower the hydrophilicity of the wafer W (the lower the surface tension of the wafer W), the more likely liquid splashing occurs. Therefore, the controller 4 may control the driving mechanisms 28b and 29b so as to change the separation distances D1 and D2 according to the surface state of the wafer W. FIG. In this case, when a wafer W that is susceptible to splashing is processed, the separation distances D1 and D2 are set relatively large, so that it is possible to suppress droplets from adhering to the cover member 27b. On the other hand, when a wafer W that is less prone to splashing is processed, the separation distances D1 and D2 are set to be relatively small. The flow velocity of the airflow (downflow) toward the Therefore, the liquid ejected onto the wafer W can be effectively delivered to the outside of the wafer W. FIG.

(4) The controller 4 may adjust the angle between the direction of the nozzles N1 to N4 and the tangential direction of the wafer W when viewed from above, depending on the surface condition of the wafer W. . Specifically, in the case of the surface state of the wafer W in which liquid splashing is likely to occur, the angle may be within the range of 0° to 30°, for example. In this case, the liquid ejected onto the wafer W from the nozzles N1 to N4 tends to be directed toward the outside of the wafer W, so even if the liquid splashes, the liquid is less likely to adhere to the cover member 27b. On the other hand, in the case of the surface state of the wafer W in which liquid splashing is difficult to occur, the angle may be within the range of 0 to 90°, for example. In this case, the liquid discharged onto the wafer W from the nozzles N1 to N4 can easily flow along the circumferential direction of the wafer W, so that the wafer W can be efficiently processed while reducing the influence of liquid splashing. Become.

(5) The control device 4 may control the blower B so as to change the output of the blower B according to the separation distances D1 and D2. Specifically, the larger the separation distances D1 and D2, the larger the output of the blower B, and the flow velocity of the airflow flowing through the gap G may be increased. In this case, even if the cutouts 27e and 27f are present, the flow velocity of the airflow in the vicinity of the cutouts 27e and 27f is forcibly increased by the blower B. FIG. As a result, the liquid discharged onto the wafer W from the nozzles N1 to N4 is more likely to face the outside of the wafer W, so even if the liquid splashes, the liquid is less likely to adhere to the cover member 27b. On the other hand, the smaller the separation distances D1 and D2, the smaller the output of the blower B, and the flow velocity of the airflow flowing through the gap G may be decreased. In this case, even if the output of the blower B is relatively small, air flows at an appropriate flow velocity in the vicinity of the notches 27e and 27f. Therefore, it is possible to save energy while reducing the influence of liquid splashing.

(6) In the above embodiment, the cover member 27b is configured to rotate with respect to the support member 27a, but the entire cover portion 27 may be configured to rotate.

(7) In the above embodiment, as shown in FIG. 3, the cutouts 27e and 27f are configured as recesses that open inward. That is, the cover member 27b had an annular shape. However, the notches 27e and 27f may completely penetrate the cover portion 27 as shown in FIG. That is, the cover member 27b may have an arc shape.

(8) In the above embodiment, the rinse liquid is supplied from the nozzles N6 and N8 toward the lower portion of the cover member 27b. However, as shown in FIG. 12, the nozzle units 22c and 23c each include a nozzle N9 having a discharge port directed obliquely upward toward the lower portion of the cover member 27b. A rinse solution may be supplied. In this case as well, the rinse liquid may be supplied downward from the nozzle N9 to the cover member 27b while the cover member 27b is being rotated.

(9) _The thickness of the inner peripheral portion 27b2 of the cover member 27b may be relatively thick (for example, 10 mm or more). In this case, the downflow can be rectified more effectively by the cover member 27b.

[Example]
Example 1. A substrate processing apparatus according to an example of the present disclosure includes a holding unit configured to hold and rotate a substrate, a processing liquid supply unit configured to supply a processing liquid to the substrate from a nozzle, a substrate and a control unit. The cover portion includes a cover member extending arcuately or annularly along the peripheral edge portion of the substrate held by the holding portion so as to face the peripheral edge portion. The cover member includes a notch that opens toward the center of the substrate so as to form a space that can accommodate the nozzle. The control unit performs processing for controlling the cover unit so as to change the separation distance in the circumferential direction of the substrate between the ejection port of the nozzle and the opening end of the notch. In this case, it is possible to arbitrarily change the separation distance. Therefore, by setting the separation distance to an appropriate size according to the liquid splashing conditions that vary depending on the type of processing liquid, the type of substrate, etc., the liquid splashed from the substrate is less likely to adhere to the cover member. Therefore, it is possible to suppress adhesion of liquid droplets to the cover member due to liquid splashing from the substrate.

Example 2. In the apparatus of Example 1, the process of controlling the cover may include the process of controlling the cover to change the separation distance by rotating the cover member. In this case, it is possible to change the separation distance with a simple configuration.

Example 3. The apparatus of Example 2 further includes a rinse liquid supply section configured to supply a rinse liquid to the cover member, and the control section rotates the cover member when the substrate is not held by the holding section. A process of controlling the cover section and the rinse liquid supply section so as to supply the rinse liquid to the cover member may be further executed. In this case, even if droplets adhere to the cover member, the droplets are washed away by the rinse liquid. Therefore, the liquid droplets attached to the cover member are prevented from accidentally dripping onto the substrate. In addition, it is possible to prevent droplets adhering to the cover member from being crystallized after being dried and scattering onto the substrate as particles.

Example 4. In the apparatus of Example 1, the cover includes a shutter member configured to slide relative to the opening of the notch, and the process of controlling the cover includes moving the shutter member to adjust the opening amount of the notch. A process of controlling the cover portion so as to change the separation distance may be included. In this case, it is possible to change the separation distance with a simple configuration.

Example 5. In the apparatus of any one of Examples 1 to 4, the process of controlling the cover may include a process of controlling the cover so as to change the separation distance according to the surface state of the substrate. Depending on the surface state of the substrate (for example, roughness, hydrophilicity, etc.), liquid splashing may or may not easily occur. However, in the case of Example 5, since the separation distance changes according to the surface state of the substrate, it is possible to suppress adhesion of liquid droplets to the cover member even when liquid splashing is likely to occur.

Example 6. The apparatus of any one of Examples 1 to 5 further comprises an airflow forming section configured to form an airflow directed toward the peripheral edge of the substrate through the gap between the substrate and the cover member, wherein the control section controls the gap A process of controlling the airflow forming part to change the flow velocity of the airflow through the . By the way, due to the presence of the cover member, the gap between the substrate and the cover member is narrowed, and the flow velocity of the airflow in the gap is increased. For this reason, the processing liquid discharged onto the substrate is likely to be directed to the outside of the peripheral edge of the substrate along with the airflow. On the other hand, as the separation distance increases, the flow velocity of the airflow in the peripheral portion of the substrate becomes slower, and the liquid splashed on the surface of the substrate tends to adhere to the cover member. However, according to Example 6, since the flow velocity of the airflow passing through the gap changes according to the separation distance, even if the separation distance becomes relatively large, the liquid splashed on the surface of the substrate will flow outside the peripheral edge of the substrate. easier to get to. Therefore, it is possible to further suppress adhesion of droplets to the cover member.

DESCRIPTION OF SYMBOLS 1... Substrate processing system 4... Control apparatus 10... Substrate processing apparatus 16... Processing unit 18... Control part 21... Rotary holding part (holding part) 22, 23... Liquid supply part (treatment liquid supply part) , 24b, 25b... Rinse liquid source (rinse liquid supply unit), 27... Cover part, 27b... Cover member, 27e, 27f... Notch part, 28, 29... Shutter part, 28a, 29a... Shutter member, B... Blower ( Airflow forming part), D1, D2... Separation distance, N1 to N4... Nozzle, N6, N8... Nozzle (rinse liquid supply part), W... Wafer (substrate), Wc... Periphery.

Claims (5)

a holding part configured to hold and rotate the substrate;
a processing liquid supply unit configured to supply a processing liquid to the substrate from a nozzle;
a cover portion disposed above the substrate;
and a control unit,
the cover portion includes a cover member extending arcuately or annularly along the peripheral edge portion of the substrate held by the holding portion so as to face the peripheral edge portion;
the cover member includes a notch open to the center side of the substrate so as to form a space capable of accommodating the nozzle;
The control unit performs a process of controlling the cover unit so as to change a separation distance in the circumferential direction of the substrate between the ejection port of the nozzle and the open end of the notch ,
The substrate processing apparatus , wherein the process of controlling the cover includes a process of controlling the cover so as to change the separation distance by rotating the cover member . further comprising a rinse liquid supply unit configured to supply a rinse liquid to the cover member;
The control section controls the cover section and the rinse liquid supply section to supply the rinse liquid to the cover member while rotating the cover member when the substrate is not held by the holding section. 3. The apparatus of claim 1 , further performing processing. a holding part configured to hold and rotate the substrate;
a processing liquid supply unit configured to supply a processing liquid to the substrate from a nozzle;
a cover portion disposed above the substrate;
and a control unit,
the cover portion includes a cover member extending arcuately or annularly along the peripheral edge portion of the substrate held by the holding portion so as to face the peripheral edge portion;
the cover member includes a notch open to the center side of the substrate so as to form a space capable of accommodating the nozzle;
The control unit performs a process of controlling the cover unit so as to change a separation distance in the circumferential direction of the substrate between the ejection port of the nozzle and the open end of the notch,
the cover includes a shutter member configured to slide with respect to the opening of the notch;
The substrate processing apparatus, wherein the process of controlling the cover includes a process of controlling the cover so as to change the separation distance by moving the shutter member to change the opening amount of the notch. The apparatus according to any one of claims 1 to 3 , wherein the process of controlling the cover includes a process of controlling the cover so as to change the separation distance according to the surface state of the substrate. further comprising an airflow forming part configured to form an airflow toward the peripheral edge of the substrate through the gap between the substrate and the cover member;
The device according to any one of claims 1 to 4 , wherein the control unit further performs a process of controlling the airflow forming unit so as to change the flow velocity of the airflow passing through the gap according to the separation distance. .

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