JP7144692B2 - Semiconductor device inspection method - Google Patents

Description

The present disclosure relates to a method of inspecting bonding strength of a semiconductor device.

A semiconductor device is usually used by being bonded to a substrate. As a method for inspecting the bonding strength between a semiconductor element and a substrate, for example, Patent Document 1 discloses that a locking portion provided at the tip of a shear tool is inserted into a bonding gap between a substrate and a semiconductor element to lock the shear tool. A method is disclosed in which the semiconductor element is lifted vertically from the substrate surface at the part to be peeled off, and the bonding strength is measured.

JP 2017-163014 A

An object of one aspect of the present invention is to provide a method for inspecting a semiconductor element that can easily inspect the bonding strength of the semiconductor element.

A method for inspecting a semiconductor element according to an aspect of the present invention is a method for inspecting the bonding strength of a semiconductor element bonded to a surface of a substrate, wherein the outer peripheral surface of the semiconductor element is pressed with a share tool, and the Let the pressing direction of the share tool be a direction that is inclined in a direction that gradually separates from the surface of the substrate toward the pressing direction.

A semiconductor inspection method according to another aspect is a method for inspecting the bonding strength of a semiconductor element bonded to a surface of a substrate, wherein the outer peripheral surface of the semiconductor element is pressed with a shear tool, and the shear tool The pressing direction is parallel to the surface of the substrate, and the shear tool has an inclined surface inclined with respect to the pressing direction as a pressing portion in contact with the semiconductor element.

A semiconductor element inspection method according to an aspect of the present invention can easily inspect the bonding strength of a semiconductor element.

1A to 1C are schematic diagrams for explaining a semiconductor device inspection method according to the first embodiment. FIG. 1B is a partially enlarged view showing a pressed state of the share tool shown in FIG. 1B; 3A to 3C are schematic diagrams for explaining a semiconductor device inspection method according to the second embodiment. It is a schematic diagram explaining the test|inspection method of the semiconductor element which concerns on a modification. It is a schematic diagram explaining the test|inspection method of the semiconductor element which concerns on another modification. FIG. 11 is a schematic diagram for explaining a method for inspecting a semiconductor element according to Embodiment 3;

Embodiments of the invention may be specified by the following configurations and features.

Furthermore, according to a method for inspecting a semiconductor element according to another embodiment, in addition to any of the above, the surface of the substrate on which the semiconductor element is bonded is lowered in the pressing direction of the share tool. It has a sloped surface. According to the above method, by arranging the substrate surface to which the semiconductor element is bonded so as to be inclined downward toward the pressing direction of the shear tool, the pressing direction of the shear tool can be easily inclined with respect to the substrate surface. can be the direction to

Furthermore, according to a semiconductor device inspection method according to another embodiment, in addition to any of the above, the pressing direction of the shear tool is set to the horizontal direction. According to the above method, the semiconductor element can be pressed in a direction inclined with respect to the substrate surface while the shear tool is pressed in the horizontal direction, so that the mechanism for moving the share tool can be simplified.

Furthermore, according to a semiconductor device inspection method according to another embodiment, in addition to any of the above, the inclination angle (α) between the pressing direction and the surface of the substrate is 5 degrees or more. According to the above method, the inclination angle (α) between the pressing direction of the share tool and the surface of the substrate is set to 5 degrees or more. When the pressing force of the shear tool is 9% or more, the peeling force can be applied more effectively.

A method for inspecting a semiconductor element according to one embodiment of the present invention is a method for inspecting the bonding strength of a semiconductor element bonded to a surface of a substrate, wherein the outer peripheral surface of the semiconductor element is pressed with a share tool, A pressing direction of the shear tool is a direction parallel to the surface of the substrate, and the shear tool is provided with an inclined surface that is inclined with respect to the pressing direction as a pressing portion in contact with the semiconductor element. According to the above method, the pressing direction of the share tool that presses the outer peripheral surface of the semiconductor element is set in a direction that gradually separates from the surface of the substrate. It can act as a peeling force (F1) that peels the semiconductor element in the direction perpendicular to the substrate surface. Therefore, according to this inspection method, the pressing force (F) of the shear tool can act not only in the shearing direction but also in the peeling direction at the bonding portion of the semiconductor element. That is, the pressing force of the share tool can be applied in directions other than the pressing direction. As a result, the joint strength of the semiconductor element can be easily inspected by simplifying the operation of the share tool for inspecting the joint strength.

Further, according to a method for inspecting a semiconductor element according to another embodiment, there is provided a method for inspecting the bonding strength of a semiconductor element bonded to the surface of a substrate, wherein the outer peripheral surface of the semiconductor element is pressed with a share tool. In addition, the pressing direction of the shear tool is parallel to the surface of the substrate, and the shear tool has an inclined surface inclined with respect to the pressing direction as a pressing portion in contact with the semiconductor element.

Also in the above method, the pressing force of the share tool can be applied in directions other than the pressing direction. As a result, the joint strength of the semiconductor element can be easily inspected by simplifying the operation of the share tool for inspecting the joint strength.

Furthermore, according to a method for inspecting a semiconductor element according to another embodiment, in addition to any of the above, the shear tool has, at its tip, a protrusion projecting toward the semiconductor element, and the inclined surface is part of the protrusion. Accordingly, by bringing the shear tool having the inclined surface into contact with the semiconductor element, a shear test can be performed by exerting stress in a direction to separate the semiconductor element from the surface of the substrate.

Furthermore, according to a semiconductor device inspection method according to another embodiment, in addition to any of the above, the semiconductor device is a light emitting device.

Furthermore, according to a semiconductor device inspection method according to another embodiment, in addition to any of the above, the share tool presses the outer peripheral edge of the lower surface of the semiconductor device.

Furthermore, according to a semiconductor device inspection method according to another embodiment, in addition to any of the above, a phosphor plate is laminated on the surface of the light emitting device, and the share tool presses the phosphor plate. I'm doing it.

Furthermore, according to a semiconductor element inspection method according to another embodiment, in addition to any of the above, the semiconductor element is bonded to the substrate via bumps.

BEST MODE FOR CARRYING OUT THE INVENTION Hereinafter, embodiments according to the present invention will be described based on the drawings. However, the embodiments shown below are examples for embodying the technical idea of the present invention, and the present invention is not limited to the following. Also, the sizes and positional relationships of members shown in each drawing may be exaggerated for clarity of explanation. Furthermore, in the following description, the same names and symbols denote the same or homogeneous members, and detailed description thereof will be omitted as appropriate. Also, parts with the same reference numerals appearing in a plurality of drawings indicate the same or equivalent parts or members. Furthermore, each of the elements constituting the embodiment according to the present invention may be composed of a plurality of elements with the same member, and one member may be used as a plurality of elements, or conversely, the function of one member may be It can also be realized by sharing the work with a plurality of members. In addition, the contents described in some embodiments can also be used in other embodiments. In addition, the following description uses terms indicating specific directions and positions (e.g., "top", "bottom", "right", "left", and other terms that include those terms) as necessary. However, the use of these terms is for the purpose of facilitating the understanding of the invention with reference to the drawings, and the technical scope of the present invention is not limited by the meanings of these terms. In the present specification, the term "comprising" is used in the sense of including both those provided as separate members and those configured as an integral member.
[Embodiment 1]

FIG. 1 is a schematic diagram for explaining the method for inspecting a semiconductor device according to the first embodiment. 1A shows the state in which the shear tool is moved toward the semiconductor element, FIG. 1B shows the state in which the shear tool presses the semiconductor element, and FIG. 1C shows the state in which the semiconductor element is separated from the substrate. there is Hereinafter, as an inspection method according to one embodiment, a semiconductor device in which a semiconductor element is bonded to the surface of a substrate is used as an object to be inspected, and the outer peripheral surface of the semiconductor element is pressed with a share tool to remove the semiconductor element from the substrate. A method of inspecting the bonding strength of a semiconductor element bonded to a substrate by peeling is shown.
[Step of preparing semiconductor device 10]
(Semiconductor device 10)

The semiconductor device 10 shown in FIG. 1 includes a semiconductor element 12, a substrate 11 to which the semiconductor element 12 is bonded on the front surface (upper surface in the drawing), and a surface 11a of the substrate 11 and a part of the back surface 12a of the semiconductor element 12 which are bonded together. and a joining member 13 that
(Semiconductor element 12)

The semiconductor element 12 is preferably a semiconductor element that can be flip-chip mounted. For example, it is preferable to have a structure in which positive and negative electrodes are provided on the same side. Examples of the semiconductor element 12 include a light emitting element and a protective element.
(substrate 11)

The substrate 11 is a member for electrically connecting the semiconductor element 12 mounted on the surface thereof while arranging it at a fixed position, and wiring made of a metal film is provided on the surface of the substrate in a predetermined pattern. As such a substrate 11, for example, there is a ceramic substrate having wiring on ceramic.
(Joining member 13)

A plurality of bonding members 13 are provided between the back surface 12 a of the semiconductor element 12 and the front surface 11 a of the substrate 11 while being separated from each other. Examples of the joining member 13 include metal members such as bumps. For example, the semiconductor element 12 to be flip-chip mounted has a pair of positive and negative electrodes on the rear surface 12a of the semiconductor element 12 . A pair of electrodes and a pair of wiring on the surface 11a of the substrate 11 are joined by a conductive joining member 13 such as a metal member. That is, a gap 14 is formed by the bonding member 13 between the back surface 12a of the semiconductor element 12 and the front surface 11a of the substrate 11 between at least two bumps connected to each electrode.

The semiconductor device can fill the gap with plastic. A semiconductor device using a semiconductor element as a light emitting element can improve the overall luminous efficiency by filling white powder that reflects light into the plastic filled in the gap to reflect the light emitted downward from the light emitting element. In a semiconductor device in which a gap is filled with plastic, the plastic thermally expands due to the thermal energy of the semiconductor element. When the plastic in the bonding gap thermally expands, a force acts to lift and separate the semiconductor element from the substrate surface. If the semiconductor element is small, the amount of heat generated per unit area increases, the temperature rise between the semiconductor element and the plastic increases, the thermal expansion of the plastic increases, and the peeling force for peeling the semiconductor element from the substrate increases. A semiconductor element can be bonded to a substrate with high bonding strength to prevent delamination. Therefore, in order to increase the yield of semiconductor devices and improve the stability of the product, it is particularly effective to inspect the bonding strength of the semiconductor element. be a means.

Each electrode of the semiconductor element 12 to be flip-chip mounted may have two or more bonding members (for example, bumps). For example, a positive electrode and a negative electrode can be provided on the rear surface 12a of the semiconductor element 12, which is rectangular in plan view, and a plurality of bonding members 13 can be provided on each of them. That is, two or more joining members are joined to one electrode. By doing so, a gap is formed between the back surface 12a of the semiconductor element 12 and the front surface 11a of the substrate 11 in addition to the gap between the positive and negative electrodes. Although FIG. 1 shows the semiconductor device 10 in which one semiconductor element 12 is arranged on one substrate 11, the semiconductor device can have a plurality of semiconductor elements arranged on one substrate.
[Step of pressing the outer edge of the semiconductor element 12 with the share tool 21]

As shown in FIG. 1, the semiconductor device 10 is inspected for bonding strength using a die shear strength testing apparatus 20 (hereinafter also simply referred to as "testing apparatus") having a shear tool 21. As shown in FIG. In the inspection method according to the embodiment, the substrate 11 has a surface 11a (upper surface in the drawing) to which the semiconductor element 12 is bonded, which slopes downward in the pressing direction of the shear tool 21 (indicated by arrow A in FIG. 1B). It has an inclined surface. When the shear tool 21 presses the outer edge of the semiconductor element 12 horizontally with the substrate surface as an inclined plane, as shown in the partially enlarged view of FIG. A force (F1) acts.

The peeling force (F1) can be increased by increasing the tilt angle (α) of the substrate surface. That is, the peeling force (F1) with respect to the pressing force (F) with which the shear tool 21 presses the outer peripheral surface of the semiconductor element 12 in the horizontal direction is specified by the inclination angle (α). The peel force (F1) increases in proportion to the product of the sine (sin) of the pressing force (F) and the tilt angle (α), as shown in Equation 1 below. This is because, as shown in FIG. 1, the pressing force (F) is the vector sum of the peeling force (F1) and the shearing force (F2) along the substrate surface.

F1=Fsinα (Formula 1)

The tilt angle (α) of the substrate surface, that is, the angle with respect to the pressing direction of the shear tool 21 is preferably 5 degrees or more, more preferably 10 degrees or more, and most preferably about 15 degrees, so that the peeling force (F1) can be increased. With the substrate 11 having an inclination angle (α) of 15 degrees with respect to the pressing direction of the shear tool 21, 26% of the pressing force (F) acting in the horizontal direction can be used as the peeling force (F1) of the semiconductor element. The tilt angle (α) can be increased to increase the peeling force (F1). Horizontal movement is impeded. For this reason, the tilt angle (α) is preferably less than 45 degrees, more preferably less than 30 degrees.

In the die shear strength testing apparatus 20 shown in FIG. 1, the upper surface 22a of the work table 22 is inclined with respect to the horizontal plane, and the surface 11a of the substrate 11 set on the upper surface 22a of the work table 22 is inclined with respect to the horizontal plane. It is designed to be an angle (α). The share tool 21 is provided in the test apparatus 20 so as to be horizontally movable with respect to the workbench 22 . In the test apparatus 20 having this structure, the shear tool 21 is moved in the horizontal direction, and the upper surface 22a of the workbench 22 is tilted, so that the pressing direction of the shear tool 21 is gradually inclined away from the substrate surface. can be

The share tool 21 has a pressing portion 21A at its tip for pressing the outer peripheral edge of the semiconductor element 12 . The semiconductor element 12 preferably has a plate-like shape with a square planar shape. The share tool 21 includes a pressing surface 21a, which is a surface perpendicular to the pressing direction, as the pressing portion 21A. The share tool 21 presses the pressing surface 21a in contact with the outer edge of the semiconductor element 12, that is, one side of the square, preferably the outer edge of the lower surface, which is the mounting surface. The shear tool 21 has a taper surface 21b that slopes downward toward the pressing direction on the lower surface of the pressing portion 21A. The share tool 21 is made of high-speed tool steel such as SKH51 so that the pressing portion 21A at the tip can press the outer peripheral edge of the thin semiconductor element 12 . The pressing surface 21a of the pressing portion 21A at the tip of the share tool 21 contacts and presses the outer peripheral edge of the semiconductor element 12 with a predetermined width. In this way, by making the pressing surface 21a of the share tool a surface perpendicular to the movement direction of the share tool, the pressing surface 21a is brought into contact with one side of the outer circumference of the lower surface of the semiconductor element 12 whose planar shape is a quadrangle and is pressed. be able to.

As shown in FIG. 1C, the breaking load of the joint member 13 can be measured by pushing the share tool 21 horizontally until the joint member 13 breaks. In this direction, while moving the share tool 21 in the horizontal direction, a force is applied to separate the semiconductor element 12 from the surface 11a of the substrate 11 in the vertical direction, so that the bonding strength can be accurately inspected. Therefore, for example, the inspection method can be effectively used as a test for selecting the bonding member 13 for flip-chip mounting.

In the above inspection method, the shear tool 21 is moved horizontally to inspect the bonding strength of the semiconductor element 12. However, the semiconductor element inspection method is not limited to this method. The bonding strength of the semiconductor element 12 is inspected under the condition that the pressing direction of the tool 21 is inclined with respect to the surface of the substrate 11, and the shear tool 21 presses the outer periphery of the semiconductor element 12 to exert a peeling force (F1). can. Therefore, it is also possible to inspect the bond strength of the semiconductor element 12 by arranging the surface of the substrate 11 in a horizontal plane and moving the share tool 21 in a direction inclined upward toward the moving direction. Specifically, the moving direction (pressing direction) of the shear tool 21 is inclined upward with respect to the surface of the substrate 11 set on the workbench of the die shear strength tester. , the pressing direction of the share tool 21 can be set to a direction that is gradually inclined away from the surface of the substrate 11 .

Further, as shown in FIG. 5, both the substrate surface and the pressing direction of the shear tool 21 are set as tilt directions, and the shear tool 21 moves so as to press the semiconductor element 12 in the direction of peeling, thereby increasing the bonding strength of the semiconductor element 12 . can also be inspected. Specifically, while the moving direction (pressing direction) of the shear tool 21 is inclined upward with respect to the horizontal plane, the upper surface of the workbench of the die shear strength tester and the substrate surface set on the workbench are sheared. The pressing direction of the share tool 21 is defined as the direction in which the share tool 21 is inclined downward toward the movement direction (that is, the pressing direction) of the tool 21, and the direction in which the share tool 21 is gradually separated from the substrate surface. That is, the test apparatus can be adjusted so that the surface of the substrate set on the upper surface of the workbench is tilted relative to the moving direction (that is, pressing direction) of the share tool 21 .
[Embodiment 2]

FIG. 3 is a schematic diagram for explaining the method for inspecting a semiconductor device according to the second embodiment. 3A shows the state in which the shear tool is moved toward the semiconductor element, FIG. 3B shows the state in which the shear tool presses the semiconductor element, and FIG. 3C shows the state in which the semiconductor element is separated from the substrate. there is In the second embodiment, as the semiconductor element 32 of the semiconductor device 30 to be inspected, the semiconductor element 32 formed by laminating the phosphor plate 17 on the surface 16a of the light emitting element 16 is used. In this semiconductor device 30 as well, the back surface 32 a of the semiconductor element 32 and the front surface 11 a of the substrate 11 are bonded via the bonding member 13 . Differences from the first embodiment will be described below.

In this embodiment, the semiconductor element 32 has a laminated structure of the light emitting element 16 and the phosphor plate 17, and the outer peripheral surface of the semiconductor element pressed by the shear tool is the outer peripheral surface of the phosphor plate 17 laminated on the light emitting element 16. and The phosphor plate 17 has an outer shape larger than that of the light emitting element 16, and is bonded to the surface 16a of the light emitting element 16 (the upper surface of the light emitting element 16 in the figure). The phosphor plate 17 is a sintered body of phosphor. The sintered phosphor is processed into a plate shape and bonded to the surface 16 a of the light emitting element 16 . The phosphor plate 17 is directly bonded to the surface 16a of the light emitting element 16 by a bonding strength stronger than the bonding strength between the light emitting element 16 and the substrate 11 . A phosphor plate 17 having an outer shape larger than that of the light emitting element 16 is joined to the light emitting element 16 and has an outer peripheral edge arranged outside the outer peripheral edge of the light emitting element 16 . The share tool 21 presses the semiconductor element 12 by bringing the pressing surface 21a into contact with the outer peripheral surface of the semiconductor element 12, that is, the outer peripheral edge of the lower surface of the phosphor plate that is joined to the light emitting element.

The semiconductor element 32 described above extends from the outer periphery of the light emitting element 16, and the outer peripheral surface of the phosphor plate 17 arranged outside the outer periphery of the light emitting element 16 is pressed with the shear tool 21 to measure the bonding strength. do. The semiconductor element 32 bonded to the light emitting element 16 without peeling off the phosphor plate 17 is pressed by the share tool 21 on the outer edge thereof, and the bonding strength from the substrate 11 is measured. It is possible to measure the bonding strength when separated from the substrate 11 without separating from the element 16 .

In the inspection method described above, since the bonding strength can be measured by pressing the phosphor plate 17 laminated on the light emitting element 16 with the share tool 21, the distance between the lower edge of the share tool 21 and the surface 11a of the substrate 11 is widened. , the share tool 21 can be moved horizontally. Therefore, the bonding strength of the semiconductor element 32 can be inspected more easily and reliably. 3B, a rotational moment acts on the semiconductor element 32 pressed in the direction indicated by the arrow A in FIG. 3B. It acts in the direction of peeling from the surface 11a of the . Therefore, the bonding strength can be inspected more accurately by increasing the force in the direction of separating the semiconductor element 32 from the substrate 11 . In addition, even when conductive paste, Au—Sn eutectic solder, or the like is used as the bonding member and the outer peripheral edge of the lower surface of the semiconductor element is covered with the bonding member, the bonding strength can be inspected more accurately. Furthermore, the above inspection method can inspect the bonding strength of a light-emitting element that is in a state close to a product having a phosphor plate laminated on its surface.
[Embodiment 3]

FIG. 6 is a schematic diagram for explaining the method for inspecting a semiconductor device according to the third embodiment. In the semiconductor device inspection method shown in FIGS. 1A and 3A described above, the share tool 21 is horizontally moved while the workbench 22 and the semiconductor device 12 are tilted, thereby relatively moving the semiconductor device 12. A stress is applied to separate the substrate 11 from the surface in a pulling direction. That is, by arranging the workbench 22 and the surface of the substrate 11 so as to be inclined with respect to the moving direction of the shear tool, the moving direction of the shear tool 21 is the same as the pressing direction of the shear tool, but the pressing direction of the shear tool can be a direction that slopes away from the surface of the substrate.

On the other hand, in the present embodiment, for example, by devising the shape of the share tool, the semiconductor element can be moved relatively from the substrate surface while moving the share tool in the horizontal direction on the horizontal workbench 22 . It is possible to apply stress for peeling in the pulling direction. As shown in FIG. 6, the shear tool 21' has a protruding portion 21c at its tip for pressing the outer peripheral edge of the semiconductor element 12. As shown in FIG. The projecting portion 21c has an inclined surface 21d that is inclined with respect to the moving direction of the share tool as a pressing portion that contacts the semiconductor element 12 . The tip of the inclined surface 21d is inserted between the semiconductor element 12 and the substrate 11, and the inclined surface 21d is formed on the outer peripheral edge of the lower surface of the semiconductor element 12 (for example, the lower right corner of the semiconductor element 12 in FIG. 6). can be contacted. With such a configuration, when the shear tool 21' is moved toward the semiconductor element, the contact position of the protrusion 21c of the shear tool 21' with the semiconductor element 12 shifts upward. In other words, as the tip of the protrusion 21c enters between the semiconductor element 12 and the substrate 11, the contact position between the protrusion 21c and the semiconductor element 12 moves upward along the protrusion inclined surface 21d. As a result, the stress acting on the contact position acts to push the semiconductor element 12 upward. Thus, by forming the shape of the share tool 21' into a projection shape having the projecting inclined surface 21d, the semiconductor device can be processed while moving the shear tool 21' in a direction parallel to the workbench and the upper surface of the semiconductor element 12. A stress can be applied in a direction to separate the element 12 from the surface of the substrate 11, and the bonding strength of the semiconductor element can be easily inspected. With this method, a semiconductor element can be obtained by using a horizontal workbench and a horizontal movement mechanism without using a mechanism for tilting and holding the workbench or the shear tool or a mechanism for moving the shear tool in an oblique direction. A stress can be applied to separate the substrate 12 from the surface of the substrate 11 in a pulling direction.

The inclination angle of the inclined surface of the shear tool with respect to the lower surface of the semiconductor element is preferably 30 degrees or more and 60 degrees or less. As a result, the tip of the projecting portion 21c of the shear tool can be easily inserted between the semiconductor element 12 and the substrate 11, and stress is easily applied in the direction of peeling off the semiconductor element 12 from the substrate 11 surface.

In addition, the present invention does not limit the relative movement of the semiconductor element and the shear tool to a configuration in which the semiconductor element side is fixed and the shear tool side is moved. For example, by fixing the share tool side and moving the semiconductor element side toward the share tool, it is possible to achieve relative movement between the semiconductor element and the share tool.

A semiconductor device inspection method according to the present disclosure can measure the bonding strength of a semiconductor device bonded to a substrate. The obtained inspection result can be used to select the material of the joining member, the forming position, and the like.

Reference Signs List 10, 30 Semiconductor device 11 Substrate 11a Surfaces 12, 32 Semiconductor elements 12a, 32a Back surface 13 Joint member 14 Joint gap 16 Light emitting element 16a Surface 17 Phosphor plate 20 Testing apparatus 21, 21 '... Share tool 21A... Pressing part 21a... Pressing surface 21b... Tapered surface 21c... Protruding part 21d... Protrusive inclined surface 22... Workbench 22a... Upper surface

Claims (5)

A method for inspecting the bonding strength of a semiconductor element bonded to the surface of a substrate by a shear strength test ,
While pressing the outer peripheral surface of the semiconductor element with a share tool,
The direction of movement of the shear tool is parallel to the surface of the substrate, and the shear tool is provided with an inclined surface that is inclined with respect to the direction of movement as a pressing portion in contact with the semiconductor element ,
The shear tool has a protruding portion at its tip that protrudes toward the semiconductor element,
The method of inspecting a semiconductor element, wherein the inclined surface is a part of the protrusion . A semiconductor device inspection method according to claim 1 ,
A method of inspecting a semiconductor device, wherein the semiconductor device is a light-emitting device. A method for inspecting a semiconductor device according to claim 1 or 2 ,
The shear tool is a method of inspecting a semiconductor device in which the peripheral edge of the lower surface of the semiconductor device is pressed. A semiconductor device inspection method according to claim 2 ,
A phosphor plate is laminated on the surface of the light emitting element,
A semiconductor device inspection method, wherein the share tool presses the phosphor plate. A semiconductor device inspection method according to any one of claims 1 to 4 ,
A method of inspecting a semiconductor element, wherein the semiconductor element is bonded to the substrate via a bump.

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