JP7130631B2 - Method for producing conductor, method for producing wiring board, and method for producing composition for forming conductor - Google Patents
Method for producing conductor, method for producing wiring board, and method for producing composition for forming conductor Download PDFInfo
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- JP7130631B2 JP7130631B2 JP2019518897A JP2019518897A JP7130631B2 JP 7130631 B2 JP7130631 B2 JP 7130631B2 JP 2019518897 A JP2019518897 A JP 2019518897A JP 2019518897 A JP2019518897 A JP 2019518897A JP 7130631 B2 JP7130631 B2 JP 7130631B2
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- 239000000203 mixture Substances 0.000 title claims description 79
- 239000004020 conductor Substances 0.000 title claims description 66
- 238000004519 manufacturing process Methods 0.000 title claims description 47
- 150000004699 copper complex Chemical class 0.000 claims description 77
- 238000000034 method Methods 0.000 claims description 63
- 239000010949 copper Substances 0.000 claims description 53
- 229910052802 copper Inorganic materials 0.000 claims description 50
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 48
- 239000000758 substrate Substances 0.000 claims description 46
- JPVYNHNXODAKFH-UHFFFAOYSA-N Cu2+ Chemical compound [Cu+2] JPVYNHNXODAKFH-UHFFFAOYSA-N 0.000 claims description 25
- 229910001431 copper ion Inorganic materials 0.000 claims description 25
- -1 amino compound Chemical class 0.000 claims description 20
- 239000003446 ligand Substances 0.000 claims description 11
- 150000004715 keto acids Chemical class 0.000 claims description 10
- 229910052757 nitrogen Inorganic materials 0.000 claims description 10
- 125000004433 nitrogen atom Chemical group N* 0.000 claims description 10
- 239000011347 resin Substances 0.000 claims description 9
- 229920005989 resin Polymers 0.000 claims description 9
- 230000001678 irradiating effect Effects 0.000 claims description 8
- 238000000151 deposition Methods 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 3
- 125000003277 amino group Chemical group 0.000 claims 3
- 125000004193 piperazinyl group Chemical group 0.000 claims 3
- 125000003386 piperidinyl group Chemical group 0.000 claims 3
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims 1
- 239000011521 glass Substances 0.000 description 12
- 239000000243 solution Substances 0.000 description 11
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 10
- PZGZYXMTHYDQER-UHFFFAOYSA-N copper;methanamine Chemical class [Cu].NC PZGZYXMTHYDQER-UHFFFAOYSA-N 0.000 description 10
- 239000000463 material Substances 0.000 description 8
- 238000007747 plating Methods 0.000 description 8
- 239000002904 solvent Substances 0.000 description 8
- HZAXFHJVJLSVMW-UHFFFAOYSA-N 2-Aminoethan-1-ol Chemical compound NCCO HZAXFHJVJLSVMW-UHFFFAOYSA-N 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 150000001412 amines Chemical group 0.000 description 4
- YXKOWHMCBBEJPS-UHFFFAOYSA-L copper;oxaldehydate Chemical compound [Cu+2].[O-]C(=O)C=O.[O-]C(=O)C=O YXKOWHMCBBEJPS-UHFFFAOYSA-L 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- 229920001721 polyimide Polymers 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 150000001879 copper Chemical class 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000000813 microcontact printing Methods 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 239000002699 waste material Substances 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 description 2
- BAVYZALUXZFZLV-UHFFFAOYSA-N Methylamine Chemical compound NC BAVYZALUXZFZLV-UHFFFAOYSA-N 0.000 description 2
- 150000004716 alpha keto acids Chemical class 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- LSIWWRSSSOYIMS-UHFFFAOYSA-L copper;diformate;tetrahydrate Chemical compound O.O.O.O.[Cu+2].[O-]C=O.[O-]C=O LSIWWRSSSOYIMS-UHFFFAOYSA-L 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- 238000000354 decomposition reaction Methods 0.000 description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- HHLFWLYXYJOTON-UHFFFAOYSA-N glyoxylic acid Chemical compound OC(=O)C=O HHLFWLYXYJOTON-UHFFFAOYSA-N 0.000 description 2
- CEAJFNBWKBTRQE-UHFFFAOYSA-N methanamine;methanol Chemical compound NC.OC CEAJFNBWKBTRQE-UHFFFAOYSA-N 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- PNWFFTWFSDDZTE-UHFFFAOYSA-N 2-aminoethanol;copper Chemical class [Cu].NCCO PNWFFTWFSDDZTE-UHFFFAOYSA-N 0.000 description 1
- CMFRHAACKAWICG-UHFFFAOYSA-N [Cu].C(C)N Chemical class [Cu].C(C)N CMFRHAACKAWICG-UHFFFAOYSA-N 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 238000005054 agglomeration Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 239000005456 alcohol based solvent Substances 0.000 description 1
- WUOACPNHFRMFPN-UHFFFAOYSA-N alpha-terpineol Chemical compound CC1=CCC(C(C)(C)O)CC1 WUOACPNHFRMFPN-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 229910002092 carbon dioxide Inorganic materials 0.000 description 1
- 239000001569 carbon dioxide Substances 0.000 description 1
- 229910002091 carbon monoxide Inorganic materials 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 239000001913 cellulose Substances 0.000 description 1
- 229920002678 cellulose Polymers 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910000365 copper sulfate Inorganic materials 0.000 description 1
- ARUVKPQLZAKDPS-UHFFFAOYSA-L copper(II) sulfate Chemical compound [Cu+2].[O-][S+2]([O-])([O-])[O-] ARUVKPQLZAKDPS-UHFFFAOYSA-L 0.000 description 1
- HFDWIMBEIXDNQS-UHFFFAOYSA-L copper;diformate Chemical compound [Cu+2].[O-]C=O.[O-]C=O HFDWIMBEIXDNQS-UHFFFAOYSA-L 0.000 description 1
- AQEDFGUKQJUMBV-UHFFFAOYSA-N copper;ethane-1,2-diamine Chemical class [Cu].NCCN AQEDFGUKQJUMBV-UHFFFAOYSA-N 0.000 description 1
- SQIFACVGCPWBQZ-UHFFFAOYSA-N delta-terpineol Natural products CC(C)(O)C1CCC(=C)CC1 SQIFACVGCPWBQZ-UHFFFAOYSA-N 0.000 description 1
- 238000000635 electron micrograph Methods 0.000 description 1
- 239000003759 ester based solvent Substances 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000005453 ketone based solvent Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 239000012046 mixed solvent Substances 0.000 description 1
- 239000002121 nanofiber Substances 0.000 description 1
- 238000007645 offset printing Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000010970 precious metal Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 159000000000 sodium salts Chemical class 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 150000003505 terpenes Chemical class 0.000 description 1
- 235000007586 terpenes Nutrition 0.000 description 1
- 229940116411 terpineol Drugs 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 239000004034 viscosity adjusting agent Substances 0.000 description 1
Images
Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
- C23C18/14—Decomposition by irradiation, e.g. photolysis, particle radiation or by mixed irradiation sources
- C23C18/143—Radiation by light, e.g. photolysis or pyrolysis
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F3/00—Manufacture of workpieces or articles from metallic powder characterised by the manner of compacting or sintering; Apparatus specially adapted therefor ; Presses and furnaces
- B22F3/10—Sintering only
- B22F3/105—Sintering only by using electric current other than for infrared radiant energy, laser radiation or plasma ; by ultrasonic bonding
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B22—CASTING; POWDER METALLURGY
- B22F—WORKING METALLIC POWDER; MANUFACTURE OF ARTICLES FROM METALLIC POWDER; MAKING METALLIC POWDER; APPARATUS OR DEVICES SPECIALLY ADAPTED FOR METALLIC POWDER
- B22F9/00—Making metallic powder or suspensions thereof
- B22F9/16—Making metallic powder or suspensions thereof using chemical processes
- B22F9/30—Making metallic powder or suspensions thereof using chemical processes with decomposition of metal compounds, e.g. by pyrolysis
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B33—ADDITIVE MANUFACTURING TECHNOLOGY
- B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
- B33Y10/00—Processes of additive manufacturing
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
- H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
Description
本発明は、導体の製造方法、配線基板の製造方法及び導体形成用組成物の製造方法に関する。 TECHNICAL FIELD The present invention relates to a method for producing a conductor, a method for producing a wiring board, and a method for producing a composition for forming a conductor.
近年、各種電子デバイス、電気機器類などの素子及び配線を印刷法により形成する、プリンタブルエレクトロニクスと呼ばれる技術が注目されている。真空蒸着法、スパッタリング法、CVD法等による従来の方法は大掛かりな設備を必要とし、これが製品の高コスト化の大きな要因となっている。また、これらの方法では一般に配線となる部分を残し、その他の部分をエッチング等により除去する工程を伴うため、材料利用の非効率、廃棄物の処分などの問題点が存在する。これに対してプリンタブルエレクトロニクスでは、配線材料を含む塗布液を基板に印刷し、これを熱処理して配線を形成する。このため、高価な装置を必要としない、配線形成に伴う廃棄物が生じないなどの利点を有する。 2. Description of the Related Art In recent years, attention has been paid to a technique called printable electronics, in which elements and wirings of various electronic devices and electrical equipment are formed by a printing method. Conventional methods such as vacuum deposition, sputtering, and CVD require large-scale equipment, which is a major factor in increasing the cost of products. In addition, since these methods generally involve a step of leaving the portion that will become the wiring and removing the other portion by etching or the like, there are problems such as inefficient use of materials and disposal of waste. On the other hand, in printable electronics, a coating liquid containing a wiring material is printed on a substrate and heat-treated to form wiring. Therefore, there are advantages such as no need for expensive equipment and no waste associated with wiring formation.
一方、配線材料としては金、銀等の貴金属に代わってより低価格でマイグレーションの発生もない銅の使用が検討されている。しかしながら、銅は極めて酸化され易い金属であるため、配線形成を不活性ガス雰囲気下で行う等の酸化防止のための対策が必要であり、これが低コスト化を妨げる要因の一つとなっている。 On the other hand, the use of copper, which is less expensive and does not cause migration, is under consideration as a wiring material in place of precious metals such as gold and silver. However, since copper is a metal that is extremely easily oxidized, it is necessary to take measures to prevent oxidation, such as forming wiring in an inert gas atmosphere, which is one of the factors that hinder cost reduction.
非特許文献1には、大気中で導体を形成可能な方法として、溶媒に可溶な銅錯体を含む塗布液を用いて基板上に印刷により薄膜を形成し、次いで炭酸ガスレーザを所望のパターン状に照射することで、照射領域に銅を析出させる方法が提案されている。 In Non-Patent Document 1, as a method capable of forming a conductor in the atmosphere, a thin film is formed on a substrate by printing using a coating liquid containing a copper complex soluble in a solvent, and then a carbon dioxide gas laser is used to form a desired pattern. A method has been proposed in which copper is deposited in the irradiated region by irradiating a
非特許文献1に記載の方法は、大気中でも導体を形成可能である、導体のダイレクトパターニングが可能である等の利点を有するが、得られる導体の表面の平滑性に向上の余地がある。
本発明は上記事情に鑑み、大気中で実施でき、表面の平滑性に優れる導体を形成可能な導体の製造方法、配線基板の製造方法及び導体形成用組成物の製造方法を提供することを課題とする。
The method described in Non-Patent Document 1 has advantages such as the ability to form conductors even in the air and direct patterning of conductors.
In view of the above circumstances, an object of the present invention is to provide a method for producing a conductor, a method for producing a wiring board, and a method for producing a composition for forming a conductor, which can be carried out in the atmosphere and can form a conductor with excellent surface smoothness. and
上記課題を解決するための手段には、以下の実施態様が含まれる。
<1>ケト酸と銅イオンとから形成される第一の銅錯体と、窒素原子を含有する配位子と銅イオンとから形成される第二の銅錯体と、を含む組成物を基板に付与して組成物層を形成する工程と、前記組成物層にレーザ照射を行って銅を析出させる工程と、を含む導体の製造方法。
<2>第二の銅錯体がアミン系銅錯体である、<1>に記載の導体の製造方法。
<3> 前記レーザ照射がCO2レーザ又はErレーザを用いて行われる、<1>又は<2>に記載の導体の製造方法。
<4>前記レーザ照射がパターン状に行われる、<1>~<3>のいずれか1項に記載の導体の製造方法。
<5>大気中で行われる、<1>~<4>のいずれか1項に記載の導体の製造方法。
<6>前記基板が樹脂基板である、<1>~<5>のいずれか1項に記載の導体の製造方法。
<7>基板と、前記基板上に配置される銅配線とを備える配線基板の製造方法であり、ケト酸と銅イオンとから形成される第一の銅錯体と、窒素原子を含有する配位子と銅イオンとから形成される第二の銅錯体と、を含む組成物を前記基板に付与して組成物層を形成する工程と、前記組成物層にレーザ照射を行って銅を析出させる工程と、を含む配線基板の製造方法。
<8>第二の銅錯体がアミン系銅錯体である、<7>に記載の配線基板の製造方法。
<9>前記レーザ照射がCO2レーザ又はErレーザを用いて行われる、<7>又は<8>に記載の配線基板の製造方法。
<10>前記レーザ照射がパターン状に行われる、<7>~<9>のいずれか1項に記載の配線基板の製造方法。
<11>大気中で行われる、<7>~<10>のいずれか1項に記載の配線基板の製造方法。
<12>前記基板が樹脂基板である、<7>~<11>のいずれか1項に記載の配線基板の製造方法。
<13>ケト酸と銅イオンとから構成される第一の銅錯体と、窒素原子を含有する配位子と銅イオンとから形成される第二の銅錯体と、を含む導体形成用組成物。
<14>第一の銅錯体がケト酸銅錯体である、<13>に記載の導体形成用組成物。
<15>第二の銅錯体がアミン系銅錯体である、<13>又は<14>に記載の導体形成用組成物。Means for solving the above problems include the following embodiments.
<1> A composition containing a first copper complex formed from a keto acid and a copper ion and a second copper complex formed from a ligand containing a nitrogen atom and a copper ion is applied to a substrate. A method for producing a conductor, comprising the steps of: applying a composition layer to form a composition layer; and irradiating the composition layer with a laser to deposit copper.
<2> The method for producing a conductor according to <1>, wherein the second copper complex is an amine-based copper complex.
<3> The method for producing a conductor according to <1> or <2>, wherein the laser irradiation is performed using a CO 2 laser or an Er laser.
<4> The method for manufacturing a conductor according to any one of <1> to <3>, wherein the laser irradiation is performed in a pattern.
<5> The method for producing a conductor according to any one of <1> to <4>, which is carried out in the air.
<6> The method for manufacturing a conductor according to any one of <1> to <5>, wherein the substrate is a resin substrate.
<7> A method for producing a wiring substrate comprising a substrate and copper wiring arranged on the substrate, wherein a first copper complex formed from a keto acid and a copper ion and a coordination containing a nitrogen atom and a second copper complex formed from copper ions and a second copper complex formed from copper ions. A method of manufacturing a wiring board, comprising:
<8> The method for producing a wiring board according to <7>, wherein the second copper complex is an amine-based copper complex.
<9> The method for manufacturing a wiring board according to <7> or <8>, wherein the laser irradiation is performed using a CO 2 laser or an Er laser.
<10> The method for manufacturing a wiring board according to any one of <7> to <9>, wherein the laser irradiation is performed in a pattern.
<11> The method for manufacturing a wiring board according to any one of <7> to <10>, which is carried out in the air.
<12> The method for manufacturing a wiring board according to any one of <7> to <11>, wherein the substrate is a resin substrate.
<13> A conductor-forming composition containing a first copper complex composed of a keto acid and a copper ion, and a second copper complex composed of a ligand containing a nitrogen atom and a copper ion .
<14> The conductor-forming composition according to <13>, wherein the first copper complex is a keto acid copper complex.
<15> The conductor-forming composition according to <13> or <14>, wherein the second copper complex is an amine-based copper complex.
本発明によれば、大気中で実施でき、表面の平滑性に優れる導体を形成可能な導体の製造方法、配線基板の製造方法及び導体形成用組成物の製造方法が提供される。 INDUSTRIAL APPLICABILITY According to the present invention, there are provided a method for producing a conductor, a method for producing a wiring board, and a method for producing a conductor-forming composition, which can be carried out in the atmosphere and can form a conductor having excellent surface smoothness.
以下、本発明を実施するための形態について詳細に説明する。但し、本発明は以下の実施形態に限定されるものではない。以下の実施形態において、その構成要素(要素ステップ等も含む)は、特に明示した場合を除き、必須ではない。数値及びその範囲についても同様であり、本発明を制限するものではない。
本開示において「工程」との語には、他の工程から独立した工程に加え、他の工程と明確に区別できない場合であってもその工程の目的が達成されれば、当該工程も含まれる。
本開示において「~」を用いて示された数値範囲には、「~」の前後に記載される数値がそれぞれ最小値及び最大値として含まれる。
本開示中に段階的に記載されている数値範囲において、一つの数値範囲で記載された上限値又は下限値は、他の段階的な記載の数値範囲の上限値又は下限値に置き換えてもよい。また、本開示中に記載されている数値範囲において、その数値範囲の上限値又は下限値は、実施例に示されている値に置き換えてもよい。
本開示において各成分は該当する物質を複数種含んでいてもよい。組成物中に各成分に該当する物質が複数種存在する場合、各成分の含有率又は含有量は、特に断らない限り、組成物中に存在する当該複数種の物質の合計の含有率又は含有量を意味する。DETAILED DESCRIPTION OF THE INVENTION Embodiments for carrying out the present invention will be described in detail below. However, the present invention is not limited to the following embodiments. In the following embodiments, the constituent elements (including element steps and the like) are not essential unless otherwise specified. The same applies to numerical values and their ranges, which do not limit the present invention.
In the present disclosure, the term "process" includes a process that is independent of other processes, and even if the purpose of the process is achieved even if it cannot be clearly distinguished from other processes. .
In the present disclosure, the numerical range indicated using "-" includes the numerical values before and after "-" as the minimum and maximum values, respectively.
In the numerical ranges described step by step in the present disclosure, the upper limit or lower limit of one numerical range may be replaced with the upper or lower limit of another numerical range described step by step. . Moreover, in the numerical ranges described in the present disclosure, the upper or lower limits of the numerical ranges may be replaced with the values shown in the examples.
In the present disclosure, each component may contain multiple types of applicable substances. When there are multiple types of substances corresponding to each component in the composition, the content rate or content of each component is the total content rate or content of the multiple types of substances present in the composition unless otherwise specified. means quantity.
<導体の製造方法>
本開示の導体の製造方法は、ケト酸と銅イオンとから形成される第一の銅錯体と、窒素原子を含有する配位子と銅イオンとから形成される第二の銅錯体と、を含む組成物を基板に付与して組成物層を形成する工程と、前記組成物層にレーザ照射を行って銅を析出させる工程と、を含む。<Conductor manufacturing method>
The method for producing a conductor of the present disclosure comprises: a first copper complex formed from a keto acid and copper ions; and a second copper complex formed from a ligand containing a nitrogen atom and copper ions. a step of applying a composition containing the composition to a substrate to form a composition layer; and a step of irradiating the composition layer with a laser to deposit copper.
上記方法では、基板上に形成された組成物層にレーザ照射を行うことで銅が析出する。具体的には、レーザ照射を行うと照射部が瞬間的に熱せられ、この熱によって銅錯体の配位子の結合が切断され、銅イオンがCuに還元されて銅が析出する。また、配位子は熱によりCO2とCOとH2Oとに分解され、気体となって除去されるため、高純度な導体が得られる。導体の形状は特に制限されず、膜状であってもパターン状であってもその他の形状であってもよい。In the above method, copper is deposited by irradiating a composition layer formed on a substrate with a laser. Specifically, when laser irradiation is performed, the irradiated portion is instantaneously heated, and the heat breaks the bonds of the ligands of the copper complex, reducing the copper ions to Cu and depositing copper. In addition, the ligand is decomposed into CO 2 , CO and H 2 O by heat and removed as a gas, so that a highly pure conductor can be obtained. The shape of the conductor is not particularly limited, and may be film-like, pattern-like, or any other shape.
上記方法では、析出により生じた銅のナノ粒子同士が溶融して成長し、レーザ照射領域に導体が形成されると考えられる。また、この反応が極めて短時間のうちに進行するために大気中の酸素と反応する前に銅粒子が析出することから、大気中であっても良好な導体が形成できると考えられる。また、析出した銅ナノ粒子は銅の融点よりも低い温度で溶融するため、低エネルギーで導体を形成することができる。また、レーザ照射された領域外の組成物層は、銅錯体を溶解しうる溶剤等を用いて容易に除去することができるため、低コスト化の点でも有利である。また、組成物は銅錯体が溶解した状態であるため、金属粒子を用いた材料のように凝集、酸化等の問題が生じず保存安定性に優れている。 In the above method, it is believed that the copper nanoparticles generated by precipitation melt and grow together, forming a conductor in the laser irradiation region. In addition, since this reaction proceeds in an extremely short time, the copper particles are deposited before reacting with oxygen in the air, so it is thought that a good conductor can be formed even in the air. In addition, since the precipitated copper nanoparticles melt at a temperature lower than the melting point of copper, a conductor can be formed with low energy. In addition, since the composition layer outside the laser-irradiated region can be easily removed using a solvent or the like that can dissolve the copper complex, it is advantageous in terms of cost reduction. In addition, since the composition is in a state in which the copper complex is dissolved, problems such as agglomeration and oxidation do not occur unlike materials using metal particles, and the storage stability is excellent.
さらに、上記方法により形成される導体は、第一の銅錯体のみを含む組成物を用いて形成した導体よりも表面の平滑性に優れている。第二の銅錯体が第一の銅錯体よりも分解しやすい(分解温度が低い)ため、第二の銅錯体からの銅の析出が先に生じて核を形成し、この核をもとにして第一の銅錯体から析出した銅による粒子の成長が促進されると考えられる。導体の表面がより平滑であることは、導体の構造がより緻密であることを意味すると考えられる。 Furthermore, the conductor formed by the above method has a smoother surface than the conductor formed using the composition containing only the first copper complex. Since the second copper complex is easier to decompose (lower decomposition temperature) than the first copper complex, the deposition of copper from the second copper complex occurs first to form a nucleus, which is used as the basis for It is considered that the growth of the grains is promoted by the copper deposited from the first copper complex. It is believed that a smoother surface of the conductor means a denser structure of the conductor.
上記方法で使用する第一の銅錯体は、ケト酸と銅イオンとから形成されるもの(ケト酸銅)であれば特に制限されず、グリオキシル酸銅等のα-ケト酸銅、β-ケト酸銅及びγ-ケト酸銅のいずれであっても、これらの組み合わせであってもよい。 The first copper complex used in the above method is not particularly limited as long as it is formed from a keto acid and a copper ion (copper keto acid). Either copper acid or copper γ-keto acid, or a combination thereof may be used.
上記方法で使用する第二の銅錯体は、窒素原子を含有する配位子と銅イオンとから形成されるものであれば特に制限されない。例えば、メチルアミン銅錯体、エチルアミン銅錯体等のモノアルキルアミン銅錯体(CnH2n+1NH2Cu:nは整数)、ジアルキルアミン銅錯体、トリアルキルアミン銅錯体、エチレンジアミン銅錯体、エタノールアミン銅錯体等のアミン系銅錯体が挙げられる。第二の銅錯体は1種を単独で用いても2種以上を併用してもよい。The second copper complex used in the above method is not particularly limited as long as it is formed from a nitrogen atom-containing ligand and copper ions. For example, monoalkylamine copper complexes such as methylamine copper complexes and ethylamine copper complexes (C n H 2n+1 NH 2 Cu: n is an integer), dialkylamine copper complexes, trialkylamine copper complexes, ethylenediamine copper complexes, ethanolamine copper complexes and other amine-based copper complexes. A 2nd copper complex may be used individually by 1 type, or may use 2 or more types together.
第一の銅錯体と第二の銅錯体を含む組成物は、これらの銅錯体を溶解しうる溶媒をさらに含んでもよい。このような溶媒としては、メタノール、エタノール、アミノエタノール等のアルコール系溶剤、シクロヘキサノン等のケトン系溶剤、ジメチルホルムアミド等のアミド系溶剤、テルピネオール等のテルペン系溶剤、エステル系溶剤などが挙げられる。溶媒は1種を単独で用いても2種以上を併用してもよい。 The composition containing the first copper complex and the second copper complex may further contain a solvent capable of dissolving these copper complexes. Examples of such solvents include alcohol solvents such as methanol, ethanol and aminoethanol, ketone solvents such as cyclohexanone, amide solvents such as dimethylformamide, terpene solvents such as terpineol, and ester solvents. A solvent may be used individually by 1 type, or may use 2 or more types together.
組成物中の第一の銅錯体と第二の銅錯体の含有率は特に制限されないが、例えば組成物全体の90質量%~5質量%の範囲内であってよく、80質量%~10質量%の範囲内であることが好ましい。 The content of the first copper complex and the second copper complex in the composition is not particularly limited, but may be, for example, in the range of 90% by mass to 5% by mass of the entire composition, and 80% by mass to 10% by mass. % is preferred.
組成物中の第一の銅錯体と第二の銅錯体のモル比(第一の銅錯体:第二の銅錯体)は特に制限されないが、例えば9:1~1:9の範囲内であってよく、8:2~2:8の範囲内であることが好ましい。また、組成物全体に対する銅のモル濃度(第一の銅錯体と第二の銅錯体の合計)は特に制限されないが、例えば0.5M(mol/L)~3.0M(mol/L)の範囲内であることが好ましい。 The molar ratio of the first copper complex to the second copper complex (first copper complex:second copper complex) in the composition is not particularly limited, but is, for example, within the range of 9:1 to 1:9. preferably within the range of 8:2 to 2:8. Further, the molar concentration of copper (total of the first copper complex and the second copper complex) with respect to the entire composition is not particularly limited, but for example, 0.5 M (mol / L) to 3.0 M (mol / L) preferably within the range.
組成物は、銅錯体と媒体以外の成分を必要に応じて含んでもよい。このような成分としては、粘度調整剤等が挙げられる。 The composition may optionally contain components other than the copper complex and the medium. Such components include viscosity modifiers and the like.
上記方法で使用する基板は特に制限されず、電子部品装置の配線基板として一般的なものを使用できる。例えば、半導体基板、ガラス基板、セラミック基板、樹脂基板、これらの複合体等が挙げられる。さらには、セルロースナノファイバを利用したペーパーデバイスに用いる基板等が挙げられる。上記方法では導体の形成がレーザ照射により行われるため、焼成等の熱処理に適しない材料からなる基板であっても導体を形成することができる。 The substrate used in the above method is not particularly limited, and a general wiring substrate for electronic component devices can be used. Examples thereof include semiconductor substrates, glass substrates, ceramic substrates, resin substrates, composites thereof, and the like. Further examples include substrates used in paper devices using cellulose nanofibers. Since the conductor is formed by laser irradiation in the above method, the conductor can be formed even if the substrate is made of a material that is not suitable for heat treatment such as firing.
基板上に組成物層を形成する方法は、特に制限されない。例えば、スピンコート法、印刷法等が挙げられる。組成物層は基板上に一様に形成しても、パターン状に形成してもよい。 The method of forming the composition layer on the substrate is not particularly limited. For example, a spin coating method, a printing method, and the like can be mentioned. The composition layer may be formed uniformly or patterned on the substrate.
上記方法でレーザ照射に使用するレーザは、銅錯体の分解と銅の析出を生じさせるものであれば特に制限されない。大気中で良好な導体を形成する観点からは赤外線レーザ及び近赤外線レーザが好ましく、CO2レーザ及びErレーザがより好ましい。レーザ照射は組成物層に対して一様に実施しても、パターン状に実施してもよい。The laser used for laser irradiation in the above method is not particularly limited as long as it causes decomposition of the copper complex and deposition of copper. From the viewpoint of forming good conductors in the atmosphere, infrared lasers and near-infrared lasers are preferred, and CO 2 lasers and Er lasers are more preferred. The laser irradiation may be performed uniformly or patternwise on the composition layer.
上記方法は、レーザ照射により銅が析出した部分以外の組成物層を除去する工程を含んでもよい。例えば、組成物層に含まれる銅錯体を溶解しうる溶剤を用いて組成物層を除去してもよい。 The above method may include a step of removing the composition layer other than the portion where the copper is deposited by laser irradiation. For example, the composition layer may be removed using a solvent capable of dissolving the copper complex contained in the composition layer.
上記方法で形成された導体は、さらに無電解銅めっき等の処理を施してもよい。無電解銅めっきを施すことで、導体の厚みを増すことができる。一般的な無電解銅めっきではPd膜を銅析出の触媒膜として使用するが、上記方法では導体上に銅を析出させるため、低コスト化の点でも有利である。 The conductor formed by the above method may be further subjected to a treatment such as electroless copper plating. By applying electroless copper plating, the thickness of the conductor can be increased. In general electroless copper plating, a Pd film is used as a catalyst film for copper deposition, but the above method deposits copper on the conductor, which is advantageous in terms of cost reduction.
上記方法で形成されるパターン状の導体は、パターン幅の均一性に優れている。このため、より細かなパターンを形成することが可能となり、より高い性能を備える素子(回路)や配線を提供することが可能となる。 The patterned conductor formed by the above method has excellent pattern width uniformity. Therefore, it becomes possible to form finer patterns, and to provide elements (circuits) and wirings with higher performance.
パターン状の導体を形成する方法としては、組成物層にレーザをパターン状に直接照射する方法(ダイレクトパターニング)でも、パターン状に組成物層を形成し、ついでレーザを照射して銅配線へと転換する方法でもよい。これらの方法では不要な導体を除去するためのエッチングのプロセスを必要とせず、エッチング廃液などが生じないため環境にも優しい。パターン状に組成物層を形成する方法としては、スクリーン印刷、オフセット印刷などの配線形成に一般に使用される印刷法のほか、さらに微細な配線を形成可能なマイクロコンタクトプリンティングが挙げられる。 As a method of forming a patterned conductor, a method of directly irradiating a composition layer with a laser in a pattern (direct patterning) can also be used. A conversion method may be used. These methods do not require an etching process for removing unnecessary conductors, and are environmentally friendly because they do not generate etching waste liquid. Examples of methods for forming a patterned composition layer include printing methods such as screen printing and offset printing, which are generally used for forming wiring, and microcontact printing, which can form finer wiring.
マイクロコンタクトプリンティングによりパターン状の導体を形成する方法としては、例えば、PDMS(ポリジメチルシロキサン)からなるスタンパーに付着させた組成物を基板に転写してパターン状の組成物層を形成し、レーザ照射により銅を析出させる方法が挙げられる。 As a method of forming a patterned conductor by microcontact printing, for example, a composition deposited on a stamper made of PDMS (polydimethylsiloxane) is transferred to a substrate to form a patterned composition layer, followed by laser irradiation. A method of depositing copper by
上記方法により形成される導体は、種々の用途に用いることができる。例えば、電子機器類に用いられる配線基板の素子又は配線を形成する方法として好適に用いることができる。また、低エネルギーで導体を形成できるため、樹脂フィルム、ガラス薄板、ペーパーデバイス等の従来の方法では導体の形成が困難であった基板への導体形成にも好適に用いることができる。 Conductors formed by the above method can be used in a variety of applications. For example, it can be suitably used as a method of forming elements or wiring of a wiring substrate used in electronic equipment. In addition, since conductors can be formed with low energy, it can be suitably used for forming conductors on substrates on which it has been difficult to form conductors by conventional methods such as resin films, thin glass plates, and paper devices.
上記方法の応用例のひとつとして、ガラスからなるインターポーザ(ガラスインターポーザ)への貫通電極の形成が挙げられる。インターポーザは基板と半導体素子との間に配置される部材であり、基板と半導体素子を電気的に接続する貫通電極を備える。インターポーザの材質としては樹脂、シリコン等が一般に用いられる。ガラスインターポーザは樹脂、シリコン等からなるインターポーザに比べて熱膨張係数、耐熱性、絶縁性、製造コスト等の面で有利である一方、貫通電極の形成工程に耐えうるほどに強度が十分でないという問題がある。 One application example of the above method is the formation of through electrodes in an interposer made of glass (glass interposer). The interposer is a member arranged between the substrate and the semiconductor element, and has through electrodes that electrically connect the substrate and the semiconductor element. Resin, silicon, or the like is generally used as the material of the interposer. Glass interposers are more advantageous than interposers made of resin, silicon, etc. in terms of coefficient of thermal expansion, heat resistance, insulation, manufacturing costs, etc. However, the problem is that the glass interposers are not strong enough to withstand the process of forming through electrodes. There is
上記方法によれば、ガラス薄板を損なうことなく貫通電極を形成することができる。ガラスインターポーザへの貫通電極の形成は、例えば、ガラス薄板にレーザ加工により貫通孔を形成し、次いで貫通孔の内部に第一の銅錯体と第二の銅錯体を含む組成物を付与し、レーザ照射により銅を析出させることで行うことができる。 According to the above method, the through electrode can be formed without damaging the thin glass plate. Formation of through electrodes in a glass interposer is performed by, for example, forming through holes in a thin glass plate by laser processing, then applying a composition containing a first copper complex and a second copper complex to the inside of the through holes, and applying a laser. It can be carried out by depositing copper by irradiation.
<配線基板の製造方法>
本開示の配線基板の製造方法は、基板と、前記基板上に配置される銅配線とを備える配線基板の製造方法であって、ケト酸と銅イオンとから形成される第一の銅錯体と、窒素原子を含有する配位子と銅イオンとから形成される第二の銅錯体と、を含む組成物を基板に付与して組成物層を形成する工程と、前記組成物層にレーザ照射を行って銅を析出させる工程と、を含む。<Method for manufacturing wiring board>
A method for producing a wiring board according to the present disclosure is a method for producing a wiring board including a substrate and copper wiring arranged on the substrate, wherein a first copper complex formed from a keto acid and a copper ion; a second copper complex formed from a ligand containing a nitrogen atom and a copper ion; applying a composition to a substrate to form a composition layer; to deposit copper.
上記方法で使用される材料、組成物層の形成方法、レーザ照射条件その他の項目の詳細及び好ましい態様は、上述した導体の製造方法におけるものと同様である。 Details and preferred aspects of the materials used in the above method, method of forming the composition layer, laser irradiation conditions, and other items are the same as those in the method of manufacturing the conductor described above.
<導体形成用組成物>
本開示の導体形成用組成物は、ケト酸と銅イオンから構成される第一の銅錯体と、窒素原子を含有する配位子と銅イオンとから形成される第二の銅錯体と、を含む。<Conductor-forming composition>
The conductor-forming composition of the present disclosure comprises a first copper complex composed of a keto acid and copper ions, and a second copper complex composed of a ligand containing a nitrogen atom and copper ions. include.
上記組成物を用いることで、表面の平滑性に優れる導体を形成することができる。上記組成物の詳細及び好ましい態様は、上述した導体の製造方法に用いる組成物の詳細及び好ましい態様と同様である。 By using the above composition, a conductor having excellent surface smoothness can be formed. The details and preferred aspects of the composition are the same as the details and preferred aspects of the composition used in the method for producing the conductor described above.
以下、上述した導体の製造方法について実施例を参照してより詳細に説明するが、本開示はこれらの実施例に制限されるものではない。 Hereinafter, the method for manufacturing the conductor described above will be described in more detail with reference to examples, but the present disclosure is not limited to these examples.
<実施例1>
(組成物の調製)
α-ケト酸(グリオキシル酸)を水酸化ナトリウムで中和し、α-ケト酸のナトリウム塩を得た。このα-ケト酸ナトリウム塩を水に溶解し、硫酸銅を水に溶解したものを加えた。この混合液を撹拌すると、薄い青色の沈殿物としてα-ケト酸銅錯体が析出した。析出したα-ケト酸銅錯体を回収し、アミノエタノールとエタノールの混合溶媒に溶解させた。この溶液に、ギ酸銅をメチルアミンのメタノール溶液に溶解させたものを添加して、メチルアミン銅錯体を生成し、第一の銅錯体としてα-ケト酸銅錯体と、第二の銅錯体としてメチルアミン銅錯体と、を含む組成物を調製した。
組成物中のα-ケト酸銅錯体とメチルアミン銅錯体のモル比は1:1とし、α-ケト酸銅錯体とメチルアミン銅錯体の合計の組成物全体における含有率は銅濃度として1M(mol/L)とした。
<Example 1>
(Preparation of composition)
The α-keto acid (glyoxylic acid) was neutralized with sodium hydroxide to obtain the sodium salt of the α-keto acid. This α-keto acid sodium salt was dissolved in water and a solution of copper sulfate in water was added. When this mixed solution was stirred, an α-keto acid copper complex was precipitated as a pale blue precipitate. The precipitated α-keto acid copper complex was collected and dissolved in a mixed solvent of aminoethanol and ethanol. To this solution, a solution obtained by dissolving copper formate in a methanol solution of methylamine is added to generate a methylamine copper complex, and α-keto acid copper complex as the first copper complex and α-keto acid copper complex as the second copper complex. A composition comprising: a methylamine copper complex was prepared.
The molar ratio of the α-keto acid copper complex and the methylamine copper complex in the composition is set to 1:1, and the total content of the α-keto acid copper complex and the methylamine copper complex in the entire composition is 1M as a copper concentration ( mol/L).
(ダイレクトパターニングによるガラス基板への銅配線の形成)
調製した組成物をガラス基板上に塗布し、CO2レーザ(レーザ出力:6W)をパターン状(パターン幅:200μm)に大気中で照射した。照射部には、銅が析出した。照射後の基板をアミノエタノール溶液に浸漬し、銅が析出した部分以外の組成物層を除去した。次いで乾燥し、導体が表面に形成された基板を得た。(Formation of copper wiring on a glass substrate by direct patterning)
The prepared composition was applied onto a glass substrate and irradiated with a CO 2 laser (laser output: 6 W) in a pattern (pattern width: 200 μm) in the atmosphere. Copper was deposited on the irradiated portion. After irradiation, the substrate was immersed in an aminoethanol solution to remove the composition layer other than the copper-deposited portion. Then, it was dried to obtain a substrate having a conductor formed on its surface.
(導体表面の評価)
銅錯体としてα-ケト酸銅錯体のみを含むこと以外は上記と同様にして組成物を調製し、この組成物を用いた以外は上記と同様にして基板上に導体を形成した。次いで、両者の導体の表面の状態を光学顕微鏡で観察した。その結果、図1に示すように、α-ケト酸銅錯体のみを含む組成物を用いて形成した導体(左)に比べ、α-ケト酸銅錯体とメチルアミン銅錯体を含む組成物を用いて形成した導体(右)の方が表面の平滑性に優れていた。(Evaluation of conductor surface)
A composition was prepared in the same manner as above except that only the α-keto acid copper complex was contained as the copper complex, and a conductor was formed on the substrate in the same manner as above except that this composition was used. Next, the state of the surfaces of both conductors was observed with an optical microscope. As a result, as shown in FIG. 1, the conductor formed using the composition containing the α-keto acid copper complex and the methylamine copper complex was superior to the conductor formed using the composition containing only the α-keto acid copper complex (left). The surface smoothness of the conductor (right) formed by the method was superior.
<実施例2>
(組成物の調製)
α-ケト酸銅(グリオキシル酸銅)0.85gを2-アミノエタノール1mlとエタノール2mlの混合物に溶解させ、1.7Mのグリオキシル酸銅溶液を調製した。別で、ギ酸銅・4水和物1.105gを40%メチルアミンメタノール3mlに溶解させ、1.7Mのメチルアミン銅錯体溶液を調製した。この二つの溶液を混合することで、第一の銅錯体としてα-ケト酸銅錯体と、第二の銅錯体としてメチルアミン銅錯体と、を含む組成物を調製した。
<Example 2>
(Preparation of composition)
0.85 g of copper α- ketoate (copper glyoxylate) was dissolved in a mixture of 1 ml of 2-aminoethanol and 2 ml of ethanol to prepare a 1.7 M copper glyoxylate solution. Separately, 1.105 g of copper formate tetrahydrate was dissolved in 3 ml of 40% methylamine methanol to prepare a 1.7 M methylamine copper complex solution. By mixing these two solutions, a composition containing an α-keto acid copper complex as a first copper complex and a methylamine copper complex as a second copper complex was prepared.
(マイクロコンタクトプリンティングによる銅配線の形成)
調製した組成物をスライドガラスにスピンコーティング(3000rpm、30秒)し、マイクロコンタクトスタンパーを押し当てて、スタンパーに組成物を付着させ、これをアルミナ基板にスタンピングして、微細パターンの組成物層を作製した。80℃、10分でプレベイクを行い、CO2レーザを照射して(レーザと組成物層間の距離:145mm、掃引速度:20mm/s、出力:8.0W)、導体を得た。次いで、導体の無電解銅めっきを行った。無電解銅めっきは、上村工業株式会社製の「スルカップELC-SP」を用いて、60℃、3、6、9及び15分の条件で実施した。これにより、パターン幅が約5μmの銅配線を形成した。(Formation of copper wiring by microcontact printing)
The prepared composition is spin-coated (3000 rpm, 30 seconds) on a slide glass, and a microcontact stamper is pressed to adhere the composition to the stamper, which is then stamped onto an alumina substrate to form a finely patterned composition layer. made. A conductor was obtained by pre-baking at 80° C. for 10 minutes and irradiating with a CO 2 laser (distance between laser and composition layer: 145 mm, sweep speed: 20 mm/s, output: 8.0 W). Electroless copper plating of the conductor was then performed. Electroless copper plating was carried out at 60° C. for 3, 6, 9 and 15 minutes using “Thrucup ELC-SP” manufactured by Uyemura & Co., Ltd. Thus, a copper wiring with a pattern width of about 5 μm was formed.
<実施例3>
(組成物の調製)
α-ケト酸銅(グリオキシル酸銅)0.5gを2-アミノエタノール1mlとエタノール2mlの混合物に溶解させ、1.0Mのグリオキシル酸銅溶液を調製した。別で、ギ酸銅・4水和物0.65gを40%メチルアミンメタノール3mlに溶解させ、1.0Mのメチルアミン銅錯体溶液を調製した。この二つの溶液を混合することで、第一の銅錯体としてα-ケト酸銅錯体と、第二の銅錯体としてメチルアミン銅錯体と、を含む組成物を調製した。
<Example 3>
(Preparation of composition)
0.5 g of copper α- ketoate (copper glyoxylate) was dissolved in a mixture of 1 ml of 2-aminoethanol and 2 ml of ethanol to prepare a 1.0 M copper glyoxylate solution. Separately, 0.65 g of copper formate tetrahydrate was dissolved in 3 ml of 40% methylamine methanol to prepare a 1.0 M methylamine copper complex solution. By mixing these two solutions, a composition containing an α-keto acid copper complex as a first copper complex and a methylamine copper complex as a second copper complex was prepared.
(ダイレクトパターニングによるポリイミドフィルムへの銅配線の形成)
ポリイミドフィルムの片面に、UV照射(10mW/cm2、ポリイミドフィルムとUVランプ間の距離:2.0cm)を2分間実施した。次いで、調製した組成物をUV照射したポリイミドフィルム上にスピンコーティング(2000rpm、30秒)し、プレベイク(80℃、10分)を行って組成物層を形成した。次いで、CO2レーザをパターン状(パターン幅:200μm)に照射(レーザと組成物層間の距離:140mm、掃引速度:20mm/s、出力:2.0W)した。その後、純水で非照射領域の組成物層を除去し、エタノールで乾燥することで、パターン状の導体を得た。次いで、導体の無電解銅めっきを行った。無電解銅めっきは、上村工業株式会社製の「スルカップELC-SP」を用いて、60℃、10分の条件で実施した。これにより、パターン幅が約200μmの銅配線を形成した。(Formation of copper wiring on polyimide film by direct patterning)
One side of the polyimide film was irradiated with UV (10 mW/cm 2 , distance between polyimide film and UV lamp: 2.0 cm) for 2 minutes. Then, the prepared composition was spin-coated (2000 rpm, 30 seconds) on the UV-irradiated polyimide film, and pre-baked (80° C., 10 minutes) to form a composition layer. Then, a CO 2 laser was irradiated in a pattern (pattern width: 200 μm) (distance between laser and composition layer: 140 mm, sweep speed: 20 mm/s, output: 2.0 W). After that, the composition layer in the non-irradiated area was removed with pure water and dried with ethanol to obtain a patterned conductor. Electroless copper plating of the conductor was then performed. Electroless copper plating was carried out at 60° C. for 10 minutes using “Thrucup ELC-SP” manufactured by Uyemura & Co., Ltd. Thus, a copper wiring with a pattern width of about 200 μm was formed.
形成した銅配線の断面を透過電子顕微鏡で観察したところ、レーザ照射により形成された50nm~100nm程度の厚みのCu膜が、無電解銅めっきにより500nm程度にまで厚膜化されている様子が確認できた。また、得られた銅配線は緻密な構造を有していた。 When the cross section of the formed copper wiring was observed with a transmission electron microscope, it was confirmed that the Cu film with a thickness of about 50 nm to 100 nm formed by laser irradiation was thickened to about 500 nm by electroless copper plating. did it. Moreover, the obtained copper wiring had a dense structure.
以上の結果から、本開示の方法は大気中で実施でき、かつ表面の平滑性に優れる導体を形成できることがわかった。また、本開示の方法は高精細な銅配線の形成にも好適であることがわかった。さらに、本開示の方法は比較的耐熱性の低い樹脂基板にも表面の平滑性に優れる導体を形成でき、かつ高精細な銅配線を形成できることがわかった。 From the above results, it was found that the method of the present disclosure can be performed in the atmosphere and can form a conductor with excellent surface smoothness. It was also found that the method of the present disclosure is suitable for forming high-definition copper wiring. Further, it was found that the method of the present disclosure can form conductors with excellent surface smoothness even on resin substrates with relatively low heat resistance, and can form high-definition copper wiring.
日本国特許出願第2017-099366号の開示は、その全体が参照により本明細書に取り込まれる。
本明細書に記載された全ての文献、特許出願、および技術規格は、個々の文献、特許出願、および技術規格が参照により取り込まれることが具体的かつ個々に記された場合と同程度に、本明細書中に援用されて取り込まれる。The disclosure of Japanese Patent Application No. 2017-099366 is incorporated herein by reference in its entirety.
All publications, patent applications and technical standards mentioned herein are to the same extent as if each individual publication, patent application and technical standard were specifically and individually noted to be incorporated by reference. incorporated herein by reference.
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JP2003147541A (en) | 2001-11-15 | 2003-05-21 | Hitachi Ltd | Electroless copper plating solution, replenishing solution for electroless copper plating, and method of producing wiring board |
JP2004277868A (en) | 2003-03-19 | 2004-10-07 | Mitsubishi Paper Mills Ltd | Preparation method of conductive composition |
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