JP7118519B2 - 固体ドーパント材料のための挿入可能なターゲットホルダ - Google Patents
固体ドーパント材料のための挿入可能なターゲットホルダ Download PDFInfo
- Publication number
- JP7118519B2 JP7118519B2 JP2021514568A JP2021514568A JP7118519B2 JP 7118519 B2 JP7118519 B2 JP 7118519B2 JP 2021514568 A JP2021514568 A JP 2021514568A JP 2021514568 A JP2021514568 A JP 2021514568A JP 7118519 B2 JP7118519 B2 JP 7118519B2
- Authority
- JP
- Japan
- Prior art keywords
- target holder
- arc chamber
- ion source
- indirectly heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000002019 doping agent Substances 0.000 title claims description 113
- 239000000463 material Substances 0.000 title claims description 93
- 239000007787 solid Substances 0.000 title claims description 25
- 150000002500 ions Chemical class 0.000 claims description 71
- 238000000034 method Methods 0.000 claims description 14
- 238000004891 communication Methods 0.000 claims description 13
- 238000010438 heat treatment Methods 0.000 claims description 6
- 230000005484 gravity Effects 0.000 claims description 4
- 239000011148 porous material Substances 0.000 claims description 4
- 239000007789 gas Substances 0.000 description 17
- 238000000605 extraction Methods 0.000 description 11
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 229910052751 metal Inorganic materials 0.000 description 9
- 239000002184 metal Substances 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 239000000919 ceramic Substances 0.000 description 7
- 239000004020 conductor Substances 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- 238000002844 melting Methods 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000012864 cross contamination Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 230000006870 function Effects 0.000 description 3
- 229910002804 graphite Inorganic materials 0.000 description 3
- 239000010439 graphite Substances 0.000 description 3
- 239000000155 melt Substances 0.000 description 3
- 238000012545 processing Methods 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000035882 stress Effects 0.000 description 3
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- 239000010937 tungsten Substances 0.000 description 3
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910052738 indium Inorganic materials 0.000 description 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 229910001338 liquidmetal Inorganic materials 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 229910052750 molybdenum Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 239000003870 refractory metal Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 239000011343 solid material Substances 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- 239000006200 vaporizer Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000012159 carrier gas Substances 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000003486 chemical etching Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052593 corundum Inorganic materials 0.000 description 1
- 238000005336 cracking Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 238000010884 ion-beam technique Methods 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 230000007935 neutral effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the object or the material; Means for adjusting diaphragms or lenses associated with the support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32614—Consumable cathodes for arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3432—Target-material dispenser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/081—Sputtering sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0815—Methods of ionisation
- H01J2237/082—Electron beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0822—Multiple sources
- H01J2237/0827—Multiple sources for producing different ions sequentially
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862733353P | 2018-09-19 | 2018-09-19 | |
US62/733,353 | 2018-09-19 | ||
US16/269,120 | 2019-02-06 | ||
US16/269,120 US11404254B2 (en) | 2018-09-19 | 2019-02-06 | Insertable target holder for solid dopant materials |
PCT/US2019/045052 WO2020060681A1 (en) | 2018-09-19 | 2019-08-05 | Insertable target holder for solid dopant materials |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022500830A JP2022500830A (ja) | 2022-01-04 |
JP7118519B2 true JP7118519B2 (ja) | 2022-08-16 |
Family
ID=69772262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021514568A Active JP7118519B2 (ja) | 2018-09-19 | 2019-08-05 | 固体ドーパント材料のための挿入可能なターゲットホルダ |
Country Status (6)
Country | Link |
---|---|
US (1) | US11404254B2 (ko) |
JP (1) | JP7118519B2 (ko) |
KR (1) | KR102531500B1 (ko) |
CN (1) | CN112703574B (ko) |
TW (1) | TWI723506B (ko) |
WO (1) | WO2020060681A1 (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11600473B2 (en) | 2019-03-13 | 2023-03-07 | Applied Materials, Inc. | Ion source with biased extraction plate |
US10923306B2 (en) * | 2019-03-13 | 2021-02-16 | Applied Materials, Inc. | Ion source with biased extraction plate |
WO2020197938A1 (en) * | 2019-03-22 | 2020-10-01 | Axcelis Technologies, Inc. | Liquid metal ion source |
US11170973B2 (en) | 2019-10-09 | 2021-11-09 | Applied Materials, Inc. | Temperature control for insertable target holder for solid dopant materials |
US10957509B1 (en) | 2019-11-07 | 2021-03-23 | Applied Materials, Inc. | Insertable target holder for improved stability and performance for solid dopant materials |
US11854760B2 (en) | 2021-06-21 | 2023-12-26 | Applied Materials, Inc. | Crucible design for liquid metal in an ion source |
US11728140B1 (en) | 2022-01-31 | 2023-08-15 | Axcelis Technologies, Inc. | Hydraulic feed system for an ion source |
US12094681B2 (en) * | 2022-05-10 | 2024-09-17 | Applied Materials, Inc. | Hybrid ion source for aluminum ion generation using a target holder and a solid target |
US12040154B2 (en) * | 2022-05-10 | 2024-07-16 | Applied Materials, Inc. | Hybrid ion source for aluminum ion generation using organoaluminium compounds and a solid target |
US20230369006A1 (en) * | 2022-05-10 | 2023-11-16 | Applied Materials, Inc. | Hybrid ion source for aluminum ion generation using a target holder and organoaluminium compounds |
US20230402247A1 (en) * | 2022-06-08 | 2023-12-14 | Applied Materials, Inc. | Molten liquid transport for tunable vaporization in ion sources |
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JP2012001764A (ja) | 2010-06-17 | 2012-01-05 | Fujitsu Ltd | 成膜装置及び成膜方法 |
JP2013536561A (ja) | 2010-08-24 | 2013-09-19 | バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド | スパッタリングターゲット供給システム |
JP2018059134A (ja) | 2016-10-03 | 2018-04-12 | 株式会社アルバック | ハースユニット、蒸発源および成膜装置 |
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-
2019
- 2019-02-06 US US16/269,120 patent/US11404254B2/en active Active
- 2019-08-05 WO PCT/US2019/045052 patent/WO2020060681A1/en active Application Filing
- 2019-08-05 CN CN201980060660.XA patent/CN112703574B/zh active Active
- 2019-08-05 KR KR1020217011216A patent/KR102531500B1/ko active IP Right Grant
- 2019-08-05 JP JP2021514568A patent/JP7118519B2/ja active Active
- 2019-08-22 TW TW108129990A patent/TWI723506B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012001764A (ja) | 2010-06-17 | 2012-01-05 | Fujitsu Ltd | 成膜装置及び成膜方法 |
JP2013536561A (ja) | 2010-08-24 | 2013-09-19 | バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド | スパッタリングターゲット供給システム |
JP2018059134A (ja) | 2016-10-03 | 2018-04-12 | 株式会社アルバック | ハースユニット、蒸発源および成膜装置 |
Also Published As
Publication number | Publication date |
---|---|
WO2020060681A1 (en) | 2020-03-26 |
US20200090916A1 (en) | 2020-03-19 |
KR102531500B1 (ko) | 2023-05-11 |
US11404254B2 (en) | 2022-08-02 |
JP2022500830A (ja) | 2022-01-04 |
TW202016968A (zh) | 2020-05-01 |
TWI723506B (zh) | 2021-04-01 |
CN112703574A (zh) | 2021-04-23 |
KR20210049174A (ko) | 2021-05-04 |
CN112703574B (zh) | 2023-06-30 |
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