JP7118519B2 - 固体ドーパント材料のための挿入可能なターゲットホルダ - Google Patents
固体ドーパント材料のための挿入可能なターゲットホルダ Download PDFInfo
- Publication number
- JP7118519B2 JP7118519B2 JP2021514568A JP2021514568A JP7118519B2 JP 7118519 B2 JP7118519 B2 JP 7118519B2 JP 2021514568 A JP2021514568 A JP 2021514568A JP 2021514568 A JP2021514568 A JP 2021514568A JP 7118519 B2 JP7118519 B2 JP 7118519B2
- Authority
- JP
- Japan
- Prior art keywords
- target holder
- arc chamber
- ion source
- indirectly heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
- H01J37/08—Ion sources; Ion guns
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/20—Means for supporting or positioning the objects or the material; Means for adjusting diaphragms or lenses associated with the support
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32055—Arc discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32532—Electrodes
- H01J37/32614—Consumable cathodes for arc discharge
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3432—Target-material dispenser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/081—Sputtering sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0815—Methods of ionisation
- H01J2237/082—Electron beam
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/06—Sources
- H01J2237/08—Ion sources
- H01J2237/0822—Multiple sources
- H01J2237/0827—Multiple sources for producing different ions sequentially
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201862733353P | 2018-09-19 | 2018-09-19 | |
US62/733,353 | 2018-09-19 | ||
US16/269,120 | 2019-02-06 | ||
US16/269,120 US11404254B2 (en) | 2018-09-19 | 2019-02-06 | Insertable target holder for solid dopant materials |
PCT/US2019/045052 WO2020060681A1 (en) | 2018-09-19 | 2019-08-05 | Insertable target holder for solid dopant materials |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2022500830A JP2022500830A (ja) | 2022-01-04 |
JP7118519B2 true JP7118519B2 (ja) | 2022-08-16 |
Family
ID=69772262
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021514568A Active JP7118519B2 (ja) | 2018-09-19 | 2019-08-05 | 固体ドーパント材料のための挿入可能なターゲットホルダ |
Country Status (6)
Country | Link |
---|---|
US (1) | US11404254B2 (ko) |
JP (1) | JP7118519B2 (ko) |
KR (1) | KR102531500B1 (ko) |
CN (1) | CN112703574B (ko) |
TW (1) | TWI723506B (ko) |
WO (1) | WO2020060681A1 (ko) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10923306B2 (en) * | 2019-03-13 | 2021-02-16 | Applied Materials, Inc. | Ion source with biased extraction plate |
US11600473B2 (en) | 2019-03-13 | 2023-03-07 | Applied Materials, Inc. | Ion source with biased extraction plate |
US11170967B2 (en) * | 2019-03-22 | 2021-11-09 | Axcelis Technologies, Inc. | Liquid metal ion source |
US11170973B2 (en) | 2019-10-09 | 2021-11-09 | Applied Materials, Inc. | Temperature control for insertable target holder for solid dopant materials |
US10957509B1 (en) | 2019-11-07 | 2021-03-23 | Applied Materials, Inc. | Insertable target holder for improved stability and performance for solid dopant materials |
US11854760B2 (en) | 2021-06-21 | 2023-12-26 | Applied Materials, Inc. | Crucible design for liquid metal in an ion source |
US11728140B1 (en) | 2022-01-31 | 2023-08-15 | Axcelis Technologies, Inc. | Hydraulic feed system for an ion source |
US20230369008A1 (en) * | 2022-05-10 | 2023-11-16 | Applied Materials, Inc. | Hybrid ion source for aluminum ion generation using a target holder and a solid target |
US20230369006A1 (en) * | 2022-05-10 | 2023-11-16 | Applied Materials, Inc. | Hybrid ion source for aluminum ion generation using a target holder and organoaluminium compounds |
US20230369007A1 (en) * | 2022-05-10 | 2023-11-16 | Applied Materials, Inc. | Hybrid ion source for aluminum ion generation using organoaluminium compounds and a solid target |
US20230402247A1 (en) * | 2022-06-08 | 2023-12-14 | Applied Materials, Inc. | Molten liquid transport for tunable vaporization in ion sources |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012001764A (ja) | 2010-06-17 | 2012-01-05 | Fujitsu Ltd | 成膜装置及び成膜方法 |
JP2013536561A (ja) | 2010-08-24 | 2013-09-19 | バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド | スパッタリングターゲット供給システム |
JP2018059134A (ja) | 2016-10-03 | 2018-04-12 | 株式会社アルバック | ハースユニット、蒸発源および成膜装置 |
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JPH089774B2 (ja) | 1990-06-25 | 1996-01-31 | 三菱電機株式会社 | 薄膜形成装置 |
JPH0554809A (ja) | 1991-08-22 | 1993-03-05 | Nissin Electric Co Ltd | ルツボ内蔵型シリコンイオン源 |
JP3117261B2 (ja) | 1991-12-25 | 2000-12-11 | レーザー濃縮技術研究組合 | フィラメント |
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US6583544B1 (en) | 2000-08-07 | 2003-06-24 | Axcelis Technologies, Inc. | Ion source having replaceable and sputterable solid source material |
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JP3485104B2 (ja) | 2001-04-24 | 2004-01-13 | 日新電機株式会社 | イオン源用オーブン |
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TWI413149B (zh) | 2008-01-22 | 2013-10-21 | Semequip Inc | 離子源氣體反應器及用於將氣體饋給材料轉化成不同分子或原子物種之方法 |
US7812321B2 (en) | 2008-06-11 | 2010-10-12 | Varian Semiconductor Equipment Associates, Inc. | Techniques for providing a multimode ion source |
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JP2010111884A (ja) * | 2008-11-04 | 2010-05-20 | Sumitomo Metal Mining Co Ltd | スパッタリングカソード及びスパッタリング成膜装置 |
JP5919195B2 (ja) * | 2009-10-27 | 2016-05-18 | インテグリス・インコーポレーテッド | イオン注入システムおよび方法 |
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KR102461901B1 (ko) | 2017-12-12 | 2022-11-01 | 어플라이드 머티어리얼스, 인코포레이티드 | 이온 소스 및 간접적으로 가열된 캐소드 이온 소스 |
US11170967B2 (en) | 2019-03-22 | 2021-11-09 | Axcelis Technologies, Inc. | Liquid metal ion source |
US11170973B2 (en) | 2019-10-09 | 2021-11-09 | Applied Materials, Inc. | Temperature control for insertable target holder for solid dopant materials |
US10957509B1 (en) * | 2019-11-07 | 2021-03-23 | Applied Materials, Inc. | Insertable target holder for improved stability and performance for solid dopant materials |
-
2019
- 2019-02-06 US US16/269,120 patent/US11404254B2/en active Active
- 2019-08-05 JP JP2021514568A patent/JP7118519B2/ja active Active
- 2019-08-05 WO PCT/US2019/045052 patent/WO2020060681A1/en active Application Filing
- 2019-08-05 KR KR1020217011216A patent/KR102531500B1/ko active IP Right Grant
- 2019-08-05 CN CN201980060660.XA patent/CN112703574B/zh active Active
- 2019-08-22 TW TW108129990A patent/TWI723506B/zh active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012001764A (ja) | 2010-06-17 | 2012-01-05 | Fujitsu Ltd | 成膜装置及び成膜方法 |
JP2013536561A (ja) | 2010-08-24 | 2013-09-19 | バリアン・セミコンダクター・エクイップメント・アソシエイツ・インコーポレイテッド | スパッタリングターゲット供給システム |
JP2018059134A (ja) | 2016-10-03 | 2018-04-12 | 株式会社アルバック | ハースユニット、蒸発源および成膜装置 |
Also Published As
Publication number | Publication date |
---|---|
TW202016968A (zh) | 2020-05-01 |
KR20210049174A (ko) | 2021-05-04 |
US20200090916A1 (en) | 2020-03-19 |
KR102531500B1 (ko) | 2023-05-11 |
US11404254B2 (en) | 2022-08-02 |
JP2022500830A (ja) | 2022-01-04 |
WO2020060681A1 (en) | 2020-03-26 |
CN112703574A (zh) | 2021-04-23 |
CN112703574B (zh) | 2023-06-30 |
TWI723506B (zh) | 2021-04-01 |
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