JP7117300B2 - 浮遊シャドウリングを有するプロセスキット - Google Patents

浮遊シャドウリングを有するプロセスキット Download PDF

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Publication number
JP7117300B2
JP7117300B2 JP2019526557A JP2019526557A JP7117300B2 JP 7117300 B2 JP7117300 B2 JP 7117300B2 JP 2019526557 A JP2019526557 A JP 2019526557A JP 2019526557 A JP2019526557 A JP 2019526557A JP 7117300 B2 JP7117300 B2 JP 7117300B2
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JP
Japan
Prior art keywords
adapter
shadow ring
ring
process kit
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2019526557A
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English (en)
Japanese (ja)
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JP2019535905A5 (enExample
JP2019535905A (ja
Inventor
ウィリアム ジョハンソン
シウ キット ホイ
ジョン マゾッコ
キランクマール サヴァンダイアー
プラシャント プラブ
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
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Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JP2019535905A publication Critical patent/JP2019535905A/ja
Publication of JP2019535905A5 publication Critical patent/JP2019535905A5/ja
Application granted granted Critical
Publication of JP7117300B2 publication Critical patent/JP7117300B2/ja
Active legal-status Critical Current
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32458—Vessel
    • H01J37/32477—Vessel characterised by the means for protecting vessels or internal parts, e.g. coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
    • H01J37/3488—Constructional details of particle beam apparatus not otherwise provided for, e.g. arrangement, mounting, housing, environment; special provisions for cleaning or maintenance of the apparatus

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Electrodes Of Semiconductors (AREA)
JP2019526557A 2016-11-19 2017-11-16 浮遊シャドウリングを有するプロセスキット Active JP7117300B2 (ja)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
IN201611039546 2016-11-19
PCT/US2017/061979 WO2018094024A1 (en) 2016-11-19 2017-11-16 Process kit having a floating shadow ring
US15/814,696 US10648071B2 (en) 2016-11-19 2017-11-16 Process kit having a floating shadow ring
US15/814,696 2017-11-16

Publications (3)

Publication Number Publication Date
JP2019535905A JP2019535905A (ja) 2019-12-12
JP2019535905A5 JP2019535905A5 (enExample) 2020-12-24
JP7117300B2 true JP7117300B2 (ja) 2022-08-12

Family

ID=62144331

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2019526557A Active JP7117300B2 (ja) 2016-11-19 2017-11-16 浮遊シャドウリングを有するプロセスキット

Country Status (6)

Country Link
US (1) US10648071B2 (enExample)
JP (1) JP7117300B2 (enExample)
KR (1) KR102474786B1 (enExample)
CN (1) CN110036136B (enExample)
TW (1) TWI744417B (enExample)
WO (1) WO2018094024A1 (enExample)

Families Citing this family (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10886113B2 (en) 2016-11-25 2021-01-05 Applied Materials, Inc. Process kit and method for processing a substrate
WO2020090164A1 (ja) * 2018-10-30 2020-05-07 株式会社アルバック 真空処理装置
CN109735814B (zh) * 2019-01-23 2023-12-22 北京北方华创微电子装备有限公司 磁控溅射反应腔室的冷却组件及其磁控溅射设备
US11887878B2 (en) * 2019-06-28 2024-01-30 Applied Materials, Inc. Detachable biasable electrostatic chuck for high temperature applications
US11361982B2 (en) * 2019-12-10 2022-06-14 Applied Materials, Inc. Methods and apparatus for in-situ cleaning of electrostatic chucks
KR102791334B1 (ko) 2019-12-31 2025-04-08 삼성전자주식회사 에지 링 및 이를 갖는 기판 처리 장치
US11935728B2 (en) * 2020-01-31 2024-03-19 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method of manufacturing a semiconductor device
US20210265137A1 (en) * 2020-02-26 2021-08-26 Intel Corporation Reconditioning of reactive process chamber components for reduced surface oxidation
USD934315S1 (en) 2020-03-20 2021-10-26 Applied Materials, Inc. Deposition ring for a substrate processing chamber
USD941372S1 (en) 2020-03-20 2022-01-18 Applied Materials, Inc. Process shield for a substrate processing chamber
US11339466B2 (en) * 2020-03-20 2022-05-24 Applied Materials, Inc. Heated shield for physical vapor deposition chamber
USD941371S1 (en) 2020-03-20 2022-01-18 Applied Materials, Inc. Process shield for a substrate processing chamber
US11492697B2 (en) * 2020-06-22 2022-11-08 Applied Materials, Inc. Apparatus for improved anode-cathode ratio for rf chambers
JP7223738B2 (ja) * 2020-11-12 2023-02-16 株式会社アルバック スパッタリング装置
US20220178021A1 (en) * 2020-12-08 2022-06-09 Skytech Co., Ltd. Wafer fixing mechanism and wafer pre-cleaning machine using the wafer fixing mechanism
TWI749956B (zh) * 2020-12-18 2021-12-11 天虹科技股份有限公司 薄膜沉積裝置
KR20230041917A (ko) 2021-09-17 2023-03-27 삼성전자주식회사 건식 식각 장치 및 이를 이용한 웨이퍼 식각 시스템
US12183559B2 (en) 2021-10-22 2024-12-31 Applied Materials, Inc. Apparatus for temperature control in a substrate processing chamber
USD1066275S1 (en) 2022-04-04 2025-03-11 Applied Materials, Inc. Baffle for anti-rotation process kit for substrate processing chamber
USD1049067S1 (en) * 2022-04-04 2024-10-29 Applied Materials, Inc. Ring for an anti-rotation process kit for a substrate processing chamber
US20230357929A1 (en) * 2022-05-05 2023-11-09 Applied Materials, Inc. Apparatus and methods to promote wafer edge temperature uniformity
CN120380193A (zh) * 2022-07-08 2025-07-25 东曹Smd有限公司 用于物理气相沉积溅射应用的动态真空密封系统
US20240018648A1 (en) * 2022-07-14 2024-01-18 Applied Materials, Inc. Purge Ring for Reduced Substrate Backside Deposition
US12371790B2 (en) * 2022-08-17 2025-07-29 Sky Tech Inc. Wafer carrier with adjustable alignment devices and deposition equipment using the same
USD1086087S1 (en) * 2023-03-30 2025-07-29 Samsung Electronics Co., Ltd. CMP (chemical mechanical planarization) retaining ring
US20240384396A1 (en) * 2023-05-18 2024-11-21 Applied Materials, Inc. Biased or floating process shield to reduce ion loss to control film deposition and improve step coverage
US12392023B1 (en) * 2024-05-03 2025-08-19 Applied Materials, Inc. Methods and apparatus for depositing amorphous indium tin oxide film

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013528706A (ja) 2010-05-14 2013-07-11 アプライド マテリアルズ インコーポレイテッド 改善された粒子低減のためのプロセスキットシールド

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5922133A (en) * 1997-09-12 1999-07-13 Applied Materials, Inc. Multiple edge deposition exclusion rings
US6296712B1 (en) * 1997-12-02 2001-10-02 Applied Materials, Inc. Chemical vapor deposition hardware and process
US6589352B1 (en) 1999-12-10 2003-07-08 Applied Materials, Inc. Self aligning non contact shadow ring process kit
JP4902051B2 (ja) * 2001-03-30 2012-03-21 キヤノンアネルバ株式会社 バイアススパッタリング装置
US7718045B2 (en) 2006-06-27 2010-05-18 Applied Materials, Inc. Ground shield with reentrant feature
US7981262B2 (en) 2007-01-29 2011-07-19 Applied Materials, Inc. Process kit for substrate processing chamber
US20080257263A1 (en) * 2007-04-23 2008-10-23 Applied Materials, Inc. Cooling shield for substrate processing chamber
KR101571558B1 (ko) * 2008-04-16 2015-11-24 어플라이드 머티어리얼스, 인코포레이티드 웨이퍼 프로세싱 증착 차폐 컴포넌트들
US20150170955A1 (en) * 2013-12-17 2015-06-18 Applied Materials, Inc. Actively-cooled shadow ring for heat dissipation in plasma chamber
CN105506570B (zh) 2014-10-16 2018-11-06 北京北方华创微电子装备有限公司 一种压环组件及物理气相沉积设备

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2013528706A (ja) 2010-05-14 2013-07-11 アプライド マテリアルズ インコーポレイテッド 改善された粒子低減のためのプロセスキットシールド

Also Published As

Publication number Publication date
KR102474786B1 (ko) 2022-12-05
TW201833351A (zh) 2018-09-16
US10648071B2 (en) 2020-05-12
WO2018094024A1 (en) 2018-05-24
US20180142340A1 (en) 2018-05-24
CN110036136A (zh) 2019-07-19
JP2019535905A (ja) 2019-12-12
TWI744417B (zh) 2021-11-01
CN110036136B (zh) 2022-05-24
KR20190075163A (ko) 2019-06-28

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