JP7082294B2 - 半導体レーザ素子の製造方法 - Google Patents

半導体レーザ素子の製造方法 Download PDF

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JP7082294B2
JP7082294B2 JP2019213863A JP2019213863A JP7082294B2 JP 7082294 B2 JP7082294 B2 JP 7082294B2 JP 2019213863 A JP2019213863 A JP 2019213863A JP 2019213863 A JP2019213863 A JP 2019213863A JP 7082294 B2 JP7082294 B2 JP 7082294B2
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side mirror
film
semiconductor laser
wavelength
laser device
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JP2020031239A5 (enExample
JP2020031239A (ja
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真尚 落合
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Nichia Corp
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Nichia Corp
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JP2019213863A 2019-11-27 2019-11-27 半導体レーザ素子の製造方法 Active JP7082294B2 (ja)

Priority Applications (2)

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JP2019213863A JP7082294B2 (ja) 2019-11-27 2019-11-27 半導体レーザ素子の製造方法
JP2021206248A JP7174295B2 (ja) 2019-11-27 2021-12-20 半導体レーザ素子及びその製造方法

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JP2019213863A JP7082294B2 (ja) 2019-11-27 2019-11-27 半導体レーザ素子の製造方法

Related Parent Applications (1)

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JP2017094787A Division JP6624154B2 (ja) 2017-05-11 2017-05-11 半導体レーザ素子及びその製造方法

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JP2021206248A Division JP7174295B2 (ja) 2019-11-27 2021-12-20 半導体レーザ素子及びその製造方法

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JP2020031239A JP2020031239A (ja) 2020-02-27
JP2020031239A5 JP2020031239A5 (enExample) 2020-06-25
JP7082294B2 true JP7082294B2 (ja) 2022-06-08

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Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004014997A (ja) 2002-06-11 2004-01-15 Sanyo Electric Co Ltd 半導体レーザ装置
JP2009016684A (ja) 2007-07-06 2009-01-22 Nichia Corp 半導体レーザ素子

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004014997A (ja) 2002-06-11 2004-01-15 Sanyo Electric Co Ltd 半導体レーザ装置
JP2009016684A (ja) 2007-07-06 2009-01-22 Nichia Corp 半導体レーザ素子

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