JP7075121B2 - Evaluation method and evaluation device for electronic products - Google Patents

Evaluation method and evaluation device for electronic products Download PDF

Info

Publication number
JP7075121B2
JP7075121B2 JP2018154669A JP2018154669A JP7075121B2 JP 7075121 B2 JP7075121 B2 JP 7075121B2 JP 2018154669 A JP2018154669 A JP 2018154669A JP 2018154669 A JP2018154669 A JP 2018154669A JP 7075121 B2 JP7075121 B2 JP 7075121B2
Authority
JP
Japan
Prior art keywords
frequency
noise
electronic product
common mode
characteristic curve
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2018154669A
Other languages
Japanese (ja)
Other versions
JP2020030073A (en
Inventor
秀勝 佐々木
宏靖 佐野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokyo Metropolitan Industrial Technology Research Instititute (TIRI)
Original Assignee
Tokyo Metropolitan Industrial Technology Research Instititute (TIRI)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Metropolitan Industrial Technology Research Instititute (TIRI) filed Critical Tokyo Metropolitan Industrial Technology Research Instititute (TIRI)
Priority to JP2018154669A priority Critical patent/JP7075121B2/en
Publication of JP2020030073A publication Critical patent/JP2020030073A/en
Application granted granted Critical
Publication of JP7075121B2 publication Critical patent/JP7075121B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Testing Electric Properties And Detecting Electric Faults (AREA)
  • Tests Of Electronic Circuits (AREA)

Description

本発明は、電子デバイスを用いて構成された電子製品の評価方法および評価装置に関する。 The present invention relates to an evaluation method and an evaluation device for an electronic product configured by using an electronic device.

半導体素子などを用いた電子回路等が構成されている電子製品は、例えば、モータなどの動作時に発生するノイズが電源ラインや信号線などに重畳し、誤動作を起こすことがある。
電子回路等に誤動作を発生させるノイズとして、例えば、ファーストトランジェントバーストノイズ(Electrical Fast Transient/Burst noise :以下、EFT/Bノイズと記載する)がある。
このEFT/Bノイズは、回路ユニット等において、基準電位(基準グラウンド)と回路配線等との間に生じる電圧変動であり、回路ユニット等を構成する高電位側配線とシグナルグランド等の低電位側配線の両方に重畳されるノイズである。そのため、例えば、コモンモードフィルタなどを回路配線の適当な部位に備えて減少させている。
In an electronic product in which an electronic circuit or the like using a semiconductor element or the like is configured, for example, noise generated during the operation of a motor or the like may be superimposed on a power supply line, a signal line, or the like, causing a malfunction.
As noise that causes a malfunction in an electronic circuit or the like, for example, there is first transient burst noise (hereinafter referred to as EFT / B noise).
This EFT / B noise is a voltage fluctuation that occurs between the reference potential (reference ground) and the circuit wiring in the circuit unit or the like, and is the high potential side wiring constituting the circuit unit or the like and the low potential side such as the signal ground. It is noise superimposed on both wirings. Therefore, for example, a common mode filter or the like is provided at an appropriate portion of the circuit wiring and reduced.

EFT/Bノイズの影響を抑制するため、通信装置用電源にサージ吸収非線形素子等を備えたものがある(例えば、特許文献1参照)。この技術は、直流給電のリターン線のG線と、アース線のE線との間にサージ吸収非線形素子を介装し、G線とE線との間に生じるノイズ電圧をクランプする。また、ファーストトランジェントノイズの立ち上がり時間を遅らせるキャパシタンスを備え、これらによって、通信装置へ供給する電力に重畳している、もしくは含まれているファーストトランジェントノイズを効果的に吸収抑制するものである。 In order to suppress the influence of EFT / B noise, some power supplies for communication devices are provided with a surge absorption nonlinear element or the like (see, for example, Patent Document 1). In this technique, a surge absorption nonlinear element is interposed between the G wire of the return wire of the DC power supply and the E wire of the ground wire, and the noise voltage generated between the G wire and the E wire is clamped. Further, it has a capacitance that delays the rise time of the fast transient noise, thereby effectively absorbing and suppressing the fast transient noise superimposed on or contained in the electric power supplied to the communication device.

また、ICやLSIなどのデバイスのEMC評価において、DPI(Direct Power injection)法が標準化されており、高周波ノイズ信号(ディファレンシャルモードノイズ)を上記のデバイスへ入力させ、DPI法に則して当該デバイスの誤動作耐久評価を行う技術がある(例えば、特許文献2参照)。
この技術は、DPIテストを統括するコントローラが、高周波信号を発振してデバイスへ注入し、当該デバイスの動作に、パルス抜けや周波数乱れ、出力電圧の規格外れ、または、通信エラーなどを起したか否かを判定するものである。
DPIテストにおいて、上記のコントローラは、高周波信号の周波数をスイープして上記のような誤動作が発生した時点における注入電力(高周波信号)の演算結果を求め、高周波信号の周波数と誤動作発生時の注入電力とを関連付けた誤動作電力周波数特性を求めている。
Further, in the EMC evaluation of devices such as ICs and LSIs, the DPI (Direct Power injection) method is standardized, and a high frequency noise signal (differential mode noise) is input to the above device, and the device is in accordance with the DPI method. There is a technique for evaluating the malfunction durability of the above (see, for example, Patent Document 2).
In this technology, did the controller that controls the DPI test oscillate a high-frequency signal and inject it into the device, causing pulse omission, frequency disturbance, output voltage out-of-specification, communication error, etc. in the operation of the device? It determines whether or not it is.
In the DPI test, the above controller sweeps the frequency of the high-frequency signal to obtain the calculation result of the injection power (high-frequency signal) at the time when the above-mentioned malfunction occurs, and obtains the frequency of the high-frequency signal and the injection power when the malfunction occurs. The malfunction power frequency characteristic associated with is sought.

特許第3329987号公報Japanese Patent No. 3329987 特許第6283174号公報Japanese Patent No. 6283174

前述のコモンモードフィルタを使用する場合、コモンモードノイズをどの程度まで抑えると良いのか指標となるものが無い。そのため、多種多様なノイズ減衰用フィルタ素子などを回路内に備える場合が多くなり、コスト上昇とともに電子製品の小型化を難しくするという問題点があった。 When using the above-mentioned common mode filter, there is no index as to how much the common mode noise should be suppressed. Therefore, there are many cases where a wide variety of noise attenuation filter elements and the like are provided in the circuit, which causes a problem that it becomes difficult to miniaturize electronic products as the cost increases.

本発明は、上記の問題点に鑑みなされたもので、電子製品の誤動作原因となるノイズ周波数を明確にし、ノイズを低減させる際のレベル指標を定める、電子製品の評価方法およびこの方法を用いた評価装置を提供することを目的とする。 The present invention has been made in view of the above problems, and uses an electronic product evaluation method and a method for clarifying a noise frequency that causes a malfunction of an electronic product and determining a level index for reducing noise. It is an object of the present invention to provide an evaluation device.

本発明に係る電子製品の評価方法は、ノイズ源が電子製品に備えられた伝送線路へコモンモードノイズの周波数をスイープしながら注入する第1過程と、前記伝送線路を介して前記電子製品に備えられたデバイスの端子に注入されたコモンモードノイズの各周波数におけるノイズレベルを示す周波数特性を測定する第2過程と、前記デバイスに誤動作が発生する各ノイズ周波数におけるノイズレベルを示す耐久特性を取得する第3過程と、前記周波数特性と前記耐久特性とから、前記電子製品に誤動作を発生させる前記コモンモードノイズの周波数帯を特定する第4過程と、を有することを特徴とする。 The method for evaluating an electronic product according to the present invention includes a first process in which a noise source injects a common mode noise frequency into a transmission line provided in the electronic product while sweeping, and prepares the electronic product via the transmission line. The second process of measuring the frequency characteristic indicating the noise level of the common mode noise injected into the terminal of the device at each frequency and the durability characteristic indicating the noise level at each noise frequency at which the device malfunctions are acquired. It is characterized by having a third process and a fourth process of specifying a frequency band of the common mode noise that causes a malfunction in the electronic product from the frequency characteristics and the durability characteristics.

また、前記第4過程は、前記周波数特性を示す特性曲線および前記耐久特性を示す特性曲線を、横軸が周波数で縦軸がノイズレベルのグラフに示したとき、前記周波数特性曲線が前記耐久特性曲線以上のノイズレベルになる周波数帯を、前記電子製品に誤動作を発生させる周波数帯であると特定する、ことを特徴とする。 Further, in the fourth process, when the characteristic curve showing the frequency characteristic and the characteristic curve showing the durability characteristic are shown in the graph of frequency on the horizontal axis and noise level on the vertical axis, the frequency characteristic curve is the durability characteristic. It is characterized in that a frequency band having a noise level equal to or higher than a curve is specified as a frequency band that causes a malfunction in the electronic product.

また、前記第1過程は、前記電子製品の2つの伝送線路に前記ノイズ源から同一振幅であって同位相のコモンモードノイズを注入し、前記第2過程は、前記2つの伝送線路に各々接続している前記デバイスの2つの端子間の電位差を測定することにより前記周波数特性を取得する、ことを特徴とする。 Further, in the first process, common mode noise having the same amplitude and the same phase is injected into the two transmission lines of the electronic product from the noise source, and the second process is connected to the two transmission lines, respectively. It is characterized in that the frequency characteristic is acquired by measuring the potential difference between the two terminals of the device.

また、本発明に係る評価装置は、電子製品に備えられた伝送線路へコモンモードノイズの周波数をスイープしながら注入するノイズ源と、前記伝送線路を介して前記電子製品に備えられたデバイスの端子に注入されたコモンモードノイズを測定する測定部と、を備え、前記測定部は、前記デバイスの端子からコモンモードノイズを入力して所定様式のデータに変換する入力部と、前記入力部から出力されたデータを用いて所定の演算処理を行う制御部と、を備え、前記制御部は、前記デバイスの端子から入力したコモンモードノイズの各周波数におけるノイズレベルを示す周波数特性を表したデータを取得するとともに、前記デバイスに誤動作が発生する各ノイズ周波数におけるノイズレベルを示す耐久特性を表したデータを取得し、前記周波数特性を表したデータと前記耐久特性を表したデータとを用いて、前記電子製品に誤動作を発生させる前記コモンモードノイズの周波数帯を特定する、ことを特徴とする。 Further, the evaluation device according to the present invention includes a noise source that injects a common mode noise frequency into a transmission line provided in the electronic product while sweeping, and a terminal of the device provided in the electronic product via the transmission line. The measuring unit includes a measuring unit that measures the common mode noise injected into the device, and the measuring unit has an input unit that inputs common mode noise from the terminal of the device and converts it into data of a predetermined format, and an output unit from the input unit. A control unit that performs predetermined arithmetic processing using the generated data is provided, and the control unit acquires data representing frequency characteristics indicating the noise level at each frequency of common mode noise input from the terminal of the device. At the same time, data representing the durability characteristics indicating the noise level at each noise frequency at which the device malfunctions is acquired, and the data representing the frequency characteristics and the data representing the durability characteristics are used to obtain the electron. It is characterized in that the frequency band of the common mode noise that causes a malfunction in the product is specified.

また、前記制御部は、前記周波数特性を示す特性曲線および前記耐久特性を示す特性曲線を、横軸が周波数で縦軸がノイズレベルのグラフに示したとき、前記周波数特性曲線が前記耐久特性曲線以上のノイズレベルになる周波数帯を前記各データを用いた演算によって抽出し、前記電子製品に誤動作を発生させる周波数帯であると特定する、
ことを特徴とする。
Further, when the control unit shows the characteristic curve indicating the frequency characteristic and the characteristic curve indicating the durability characteristic in a graph in which the horizontal axis is the frequency and the vertical axis is the noise level, the frequency characteristic curve is the durability characteristic curve. The frequency band having the above noise level is extracted by the calculation using each of the above data, and is specified as the frequency band that causes the electronic product to malfunction.
It is characterized by that.

また、前記ノイズ源は、前記電子製品の2つの伝送線路に同一振幅であって同位相のコモンモードノイズを注入し、前記測定部は、前記2つの伝送線路に各々接続する前記デバイスの2つの端子間の電位差を測定することにより前記周波数特性を取得する、ことを特徴とする。 Further, the noise source injects common mode noise having the same amplitude and the same phase into the two transmission lines of the electronic product, and the measuring unit is the two devices of the device connected to the two transmission lines, respectively. It is characterized in that the frequency characteristic is acquired by measuring the potential difference between the terminals.

本発明によれば、電子製品の誤動作原因となる周波数を特定することができ、当該周波数に適した対策を施すことにより、効率よくノイズを削減することが可能になる。 According to the present invention, it is possible to identify a frequency that causes a malfunction of an electronic product, and it is possible to efficiently reduce noise by taking measures suitable for the frequency.

本発明の実施例による評価装置の概略構成を示す説明図である。It is explanatory drawing which shows the schematic structure of the evaluation apparatus according to the Example of this invention. 図1の評価装置によって測定した周波数特性を示す説明図である。It is explanatory drawing which shows the frequency characteristic measured by the evaluation apparatus of FIG. 図1のデバイスの耐久特性を示す説明図である。It is explanatory drawing which shows the durability characteristic of the device of FIG. 電子製品の誤動作原因として特定する周波数帯を示す説明図である。It is explanatory drawing which shows the frequency band specified as the cause of malfunction of an electronic product.

以下、この発明の実施の一形態を説明する。
(実施例)
図1は、本発明の実施例による評価装置の概略構成を示す説明図である。この評価装置は、各周波数の高周波信号を出力する発振器等のノイズ源12と、電子製品10の各部からノイズ信号等を検出し、所定様式のデータへ変換して演算処理を行う計測装置11によって構成されている。
ノイズ源12は、2つの高周波信号を出力するように構成されており、上記の高周波信号を所望の振幅大きさ(信号レベル)に調整することができ、また2つの信号の位相を調整することができるように構成されている。また、所望の周波数帯域において、高周波信号の周波数をスイープすることができるように構成されている。
Hereinafter, an embodiment of the present invention will be described.
(Example)
FIG. 1 is an explanatory diagram showing a schematic configuration of an evaluation device according to an embodiment of the present invention. This evaluation device uses a noise source 12 such as an oscillator that outputs high-frequency signals of each frequency, and a measuring device 11 that detects noise signals and the like from each part of the electronic product 10 and converts them into data in a predetermined format for arithmetic processing. It is configured.
The noise source 12 is configured to output two high frequency signals, the above high frequency signals can be adjusted to a desired amplitude magnitude (signal level), and the phases of the two signals can be adjusted. It is configured to be able to. Further, it is configured so that the frequency of the high frequency signal can be swept in a desired frequency band.

計測装置11は、電子製品10の所望の部分から高周波のノイズ信号を検出する(入力する)プローブ20を備えている。なお、プローブ20は、例えば2[kV]のコモンモード電圧に対応する高耐圧型の差動プローブである。
計測装置11は、例えばスペクトラムアナライザの機能を備え、プローブ20を用いて入力したコモンモードノイズなどの高周波信号等を所定様式のデータに変換する入力部21、CPUやDSP(Digital Signal Processor)などのプロセッサを備えて所定のデータ処理、演算等を行う制御部22、制御部22の演算処理に用いるデータや制御プログラム等を記憶し、また、制御部22が行った演算結果等を記憶する記憶部23などを備えている。
The measuring device 11 includes a probe 20 that detects (inputs) a high-frequency noise signal from a desired portion of the electronic product 10. The probe 20 is a high withstand voltage differential probe corresponding to, for example, a common mode voltage of 2 [kV].
The measuring device 11 has, for example, a spectrum analyzer function, and includes an input unit 21, a CPU, a DSP (Digital Signal Processor), and the like that convert high-frequency signals such as common mode noise input using the probe 20 into data in a predetermined format. A control unit 22 equipped with a processor to perform predetermined data processing, calculation, etc., a storage unit that stores data, control programs, etc. used for calculation processing of the control unit 22, and also stores calculation results, etc. performed by the control unit 22. It is equipped with 23 and so on.

制御部22は、例えば入力部21から順次入力するデータを処理し、後述する各特性を表すデータを生成し、また、これらのデータを用いた演算処理を行って上記の特性を表す特性曲線から所定領域等を求めるように構成されている。
後述する各特性曲線等に関連する動作処理は、各特性などを表すデータを用いて制御部22が演算処理等によって行うものである。
For example, the control unit 22 processes data sequentially input from the input unit 21, generates data representing each characteristic described later, and performs arithmetic processing using these data to obtain the above characteristic curve. It is configured to obtain a predetermined area or the like.
The operation processing related to each characteristic curve or the like, which will be described later, is performed by the control unit 22 by arithmetic processing or the like using data representing each characteristic or the like.

評価対象の電子製品10は、デバイス30などの回路素子等を、図示を省略した基板に実装し、当該基板に形成された配線パターン等によって上記の各回路素子等を接続した電子回路を備えている。
デバイス30は、例えばICやLSI等の半導体集積回路素子であり、複数の端子ピンを備えて構成されている。
図1に例示したデバイス30は、外部から電力を入力する電源端子ピンのVdピン31、デバイス30の内部回路のグラウンド部分(シグナルグラウンド)と接続されているSGピン32などを備えている。Vdピン31は、電子製品10内部に備えられた伝送線路121に接続されている。また、SGピン32は、電子製品10内部に備えられた伝送線路122に接続されている。伝送線路121,122は、いずれも基準グラウンド120に接続されていない。
The electronic product 10 to be evaluated includes an electronic circuit in which a circuit element or the like such as a device 30 is mounted on a substrate (not shown) and the above circuit elements or the like are connected by a wiring pattern or the like formed on the substrate. There is.
The device 30 is a semiconductor integrated circuit element such as an IC or an LSI, and is configured to include a plurality of terminal pins.
The device 30 illustrated in FIG. 1 includes a Vd pin 31 of a power supply terminal pin for inputting electric power from the outside, an SG pin 32 connected to a ground portion (signal ground) of an internal circuit of the device 30, and the like. The Vd pin 31 is connected to a transmission line 121 provided inside the electronic product 10. Further, the SG pin 32 is connected to a transmission line 122 provided inside the electronic product 10. Neither the transmission lines 121 nor 122 are connected to the reference ground 120.

次に動作について説明する。
電子製品10の評価を行うとき、初めに、EFT/Bノイズが当該電子製品10へ侵入した場合に、デバイス30等が実装されている前述の基板上、もしくは電子製品10内部において発生する電位差を観測する。
この電位差の観測は、図1に示したように、デバイス30のVdピン31とSGピン32にそれぞれ接続される伝送線路121,122(電子製品10内部のコモンモード電圧の伝送線路)にノイズ源12を接続する。また、Vdピン31とSGピン32にプローブ20を接触もしくは接続する。
Next, the operation will be described.
When evaluating the electronic product 10, first, when EFT / B noise invades the electronic product 10, the potential difference generated on the above-mentioned substrate on which the device 30 or the like is mounted or inside the electronic product 10 is measured. Observe.
As shown in FIG. 1, the observation of this potential difference is a noise source on the transmission lines 121 and 122 (transmission lines of the common mode voltage inside the electronic product 10) connected to the Vd pin 31 and the SG pin 32 of the device 30, respectively. 12 is connected. Further, the probe 20 is brought into contact with or connected to the Vd pin 31 and the SG pin 32.

上記のように各部を接続して電子製品10を動作状態とし、ノイズ源12からノイズ信号を出力させ、上記の端子ピン間の電位差(図1に示した電位差V3)を計測装置11に入力して波形観測し、当該電位差の大きさを測定する。
この電位差の測定は、ノイズ源12が発生するノイズ信号の周波数をスイープさせ、各周波数において電子製品10に誤動作が生じる信号強度を測定する。
なお、この測定を行うとき、ノイズ源12から同じ大きさの振幅で同位相のノイズ信号を伝送線路121と伝送線路122へ出力し、電子製品10にコモンモードノイズを注入する。
As described above, each part is connected to put the electronic product 10 into an operating state, a noise signal is output from the noise source 12, and the potential difference between the terminal pins (potential difference V3 shown in FIG. 1) is input to the measuring device 11. The waveform is observed and the magnitude of the potential difference is measured.
In the measurement of this potential difference, the frequency of the noise signal generated by the noise source 12 is swept, and the signal strength at which the electronic product 10 malfunctions is measured at each frequency.
When this measurement is performed, noise signals of the same phase with the same magnitude are output from the noise source 12 to the transmission line 121 and the transmission line 122, and common mode noise is injected into the electronic product 10.

図1に例示した評価装置では、ノイズ源12から電圧V1のノイズ信号を伝送線路121へ出力し、また、電圧V2のノイズ信号を伝送線路122へ出力している。
ここで、ノイズ源12から出力される電圧V1および電圧V2は、ノイズ源12の各出力端子等と基準グラウンド120との間に生じる電位差であり、当該ノイズ源12の出力端子において、同一の振幅大きさ(同一のノイズレベル)である。
In the evaluation device illustrated in FIG. 1, the noise signal of the voltage V1 is output from the noise source 12 to the transmission line 121, and the noise signal of the voltage V2 is output to the transmission line 122.
Here, the voltage V1 and the voltage V2 output from the noise source 12 are potential differences generated between each output terminal of the noise source 12 and the reference ground 120, and have the same amplitude at the output terminal of the noise source 12. The magnitude (same noise level).

図2は、図1の評価装置によって測定した周波数特性を示す説明図である。この図は、伝送線路121,122へ入力するノイズ信号の振幅を所定大きさ(一定の大きさ)とし、当該ノイズ信号の周波数をスイープしたとき、各周波数において観測されたデバイス30のVdピン31とSGピン32との間の電位差V3を示したものである。
図中、横軸はノイズ源12から出力されるノイズ信号の周波数を示し、縦軸はVdピン31とSGピン32との間において観測された電位差V3(デバイス30に注入されたノイズレベル)を示している。
FIG. 2 is an explanatory diagram showing frequency characteristics measured by the evaluation device of FIG. In this figure, the amplitude of the noise signal input to the transmission lines 121 and 122 is set to a predetermined magnitude (constant magnitude), and when the frequency of the noise signal is swept, the Vd pin 31 of the device 30 observed at each frequency is 31. It shows the potential difference V3 between and SG pin 32.
In the figure, the horizontal axis shows the frequency of the noise signal output from the noise source 12, and the vertical axis shows the potential difference V3 (noise level injected into the device 30) observed between the Vd pin 31 and the SG pin 32. Shows.

また、図中、特性曲線aは、電子製品10に誤動作が発生する振幅大きさ(ノイズレベル)のノイズ信号(EFT/Bノイズ)を各伝送線路へ入力したとき、デバイス30の前述のピン間において測定した周波数特性を示している。
また、特性曲線bは、電子製品10が正常に動作することができる振幅大きさのノイズ信号(EFT/Bノイズ)を前述の各伝送線路へ入力したとき、デバイス30の前述のピン間において測定した周波数特性を示している。
Further, in the figure, the characteristic curve a shows the above-mentioned pin spacing of the device 30 when a noise signal (EFT / B noise) having an amplitude magnitude (noise level) that causes a malfunction in the electronic product 10 is input to each transmission line. The frequency characteristics measured in are shown.
Further, the characteristic curve b is measured between the above-mentioned pins of the device 30 when a noise signal (EFT / B noise) having an amplitude that allows the electronic product 10 to operate normally is input to each of the above-mentioned transmission lines. The frequency characteristics are shown.

電子製品10の評価を行うときには、前述の周波数特性を取得するとともに、次に説明するDPI法によるデバイス30の耐久特性(イミュニティ特性)を取得する。
デバイス30のノイズに対する耐久特性を測定するときには、例えばデバイス30の評価ボード(図示省略)を用いる。評価ボードには所定の端子等が備えられており、所定の端子に外部電源装置を接続し、デバイス30に電源電力が供給されるように接続する。また、例えば、デバイス30のVdピン31に、高周波信号(EFT/Bノイズ)が注入されるように、例えば評価ボードの所定端子に方向性結合器(ディレクショナルカプラ)を介してノイズ源12(RFモジュレータ等)を接続する。また、例えば上記の方向性結合器を介して計測装置11(RFパワーメータ等)を評価ボードに接続する。
When evaluating the electronic product 10, the frequency characteristics described above are acquired, and the durability characteristics (immunity characteristics) of the device 30 by the DPI method described below are acquired.
When measuring the durability characteristics of the device 30 against noise, for example, an evaluation board of the device 30 (not shown) is used. The evaluation board is provided with a predetermined terminal or the like, and an external power supply device is connected to the predetermined terminal so as to supply power to the device 30. Further, for example, a noise source 12 (for example, a noise source 12 (directive coupler) is inserted into a predetermined terminal of the evaluation board so that a high frequency signal (EFT / B noise) is injected into the Vd pin 31 of the device 30. RF modulator etc.) is connected. Further, for example, the measuring device 11 (RF power meter or the like) is connected to the evaluation board via the above-mentioned directional coupler.

上記のように各部を接続しておき、ノイズ源12からデバイス30の例えばVdピン31ならびにSGピン32へ直接高周波信号を注入する。このとき、Vdピン31とSGピン32の間の電位差V3を測定する。
詳しくは、初めに、評価ボードのデバイス30を動作させずに、例えば、評価ボードに設けられているノイズ入力端子(ノイズ注入ポート等)に所定強度のノイズ信号を供給し、このとき計測装置11が示した計測値を取得する。この計測値を各ノイズ周波数において求め、当該評価ボードのノイズ入力端子から方向性結合器を介して計測装置11までの伝送線路が有する伝送特性を測定する。
Each part is connected as described above, and a high frequency signal is directly injected from the noise source 12 to, for example, the Vd pin 31 and the SG pin 32 of the device 30. At this time, the potential difference V3 between the Vd pin 31 and the SG pin 32 is measured.
Specifically, first, without operating the device 30 of the evaluation board, for example, a noise signal having a predetermined intensity is supplied to a noise input terminal (noise injection port or the like) provided on the evaluation board, and at this time, the measuring device 11 Gets the measured value indicated by. This measured value is obtained at each noise frequency, and the transmission characteristics of the transmission line from the noise input terminal of the evaluation board to the measuring device 11 via the directional coupler are measured.

この後、評価ボード等に電源電力を供給してデバイス30を動作状態とし、ノイズ源12から出力するノイズ信号の強度(ノイズレベル)を変化させて、デバイス30に誤動作が生じるノイズレベルを測定する。
ここで取得するデバイス30に誤動作が生じるノイズレベルは、実測値に前述の伝送特性を加味して求めた値である。
After that, power is supplied to the evaluation board or the like to put the device 30 into an operating state, the strength (noise level) of the noise signal output from the noise source 12 is changed, and the noise level at which the device 30 malfunctions is measured. ..
The noise level at which the device 30 acquired here causes a malfunction is a value obtained by adding the above-mentioned transmission characteristics to the measured value.

図3は、図1のデバイス30の耐久特性を示す説明図である。この図は、前述のようにDPI法によって測定したデバイス30のノイズに対する耐久特性の特性曲線cを示したもので、例えば評価ボードに実装されたデバイス30のVdピン31とSGピン32にコモンモードノイズを注入し、当該デバイス30に誤動作が発生したときのノイズレベルを縦軸に示し、当該ノイズレベルで誤動作が発生したときのノイズ周波数を横軸に示している。
例えば、図1に示した計測装置11の制御部22は、前述のように電子製品10の周波数特性を測定し、例えば図2に示した周波数特性の特性曲線aを表すデータを取得する。また、前述のDPI法により耐久特性の特性曲線cを表すデータを取得する。
FIG. 3 is an explanatory diagram showing the durability characteristics of the device 30 of FIG. This figure shows the characteristic curve c of the durability characteristic against noise of the device 30 measured by the DPI method as described above. For example, the common mode is applied to the Vd pin 31 and the SG pin 32 of the device 30 mounted on the evaluation board. The vertical axis shows the noise level when noise is injected and a malfunction occurs in the device 30, and the horizontal axis shows the noise frequency when a malfunction occurs at the noise level.
For example, the control unit 22 of the measuring device 11 shown in FIG. 1 measures the frequency characteristics of the electronic product 10 as described above, and acquires, for example, data representing the characteristic curve a of the frequency characteristics shown in FIG. In addition, data representing the characteristic curve c of the durability characteristic is acquired by the above-mentioned DPI method.

なお、デバイス30の耐久特性は、前述のように計測装置11等を用いて実際に測定してもよいが、計測装置11の外部から当該耐久特性を表すデータを取得し、例えば記憶部23などに予め記憶させておき、制御部22が演算処理に用いる際に記憶部23から読み出すように構成してもよい。
デバイス30の耐久特性を取得した後、制御部22は、前述の周波数特性(特性曲線a)および耐久特性(特性曲線c)を表すデータを用いて、電子製品10についてノイズ対策を要するノイズ周波数帯を特定する処理(演算処理等)を行う。
The durability characteristics of the device 30 may be actually measured using the measuring device 11 or the like as described above, but data representing the durability characteristics can be acquired from the outside of the measuring device 11 and, for example, a storage unit 23 or the like. It may be stored in advance and read from the storage unit 23 when the control unit 22 is used for arithmetic processing.
After acquiring the durability characteristics of the device 30, the control unit 22 uses the data representing the frequency characteristics (characteristic curve a) and the durability characteristics (characteristic curve c) described above to use the noise frequency band for which noise countermeasures are required for the electronic product 10. Performs processing (arithmetic processing, etc.) to specify.

図4は、電子製品10の誤動作原因として特定する周波数帯を示す説明図である。この図は、図2の特性曲線a,bと図3の特性曲線cとを、縦軸ならびに横軸のスケールを同一に揃えてグラフ表示したものである。
例えば制御部22は、上記のグラフに各特性曲線を示したとき、ノイズレベルに関して特性曲線aが特性曲線c以上になっている周波数帯を抽出し、これをノイズ対策を要する周波数帯として特定する。
FIG. 4 is an explanatory diagram showing a frequency band specified as a cause of malfunction of the electronic product 10. This figure is a graph showing the characteristic curves a and b in FIG. 2 and the characteristic curves c in FIG. 3 with the same scales on the vertical axis and the horizontal axis.
For example, when each characteristic curve is shown in the above graph, the control unit 22 extracts a frequency band in which the characteristic curve a is equal to or higher than the characteristic curve c with respect to the noise level, and specifies this as a frequency band requiring noise countermeasures. ..

即ち、制御部22は、図4に示した領域dを演算処理等によって求め、当該領域dに該当する周波数帯を抽出する。
領域dは、電子製品10に誤動作を発生させるノイズレベルが、DPI法によって取得したデバイス30の耐久特性を超えている領域である。
That is, the control unit 22 obtains the region d shown in FIG. 4 by arithmetic processing or the like, and extracts the frequency band corresponding to the region d.
The region d is a region where the noise level that causes the electronic product 10 to malfunction exceeds the durability characteristics of the device 30 acquired by the DPI method.

この領域dが示す周波数帯のEFT/Bノイズが、電子製品10に誤動作を発生させる原因であることから、当該周波数帯のコモンモードノイズを例えば基準グラウンド120へ放出させる素子等(例えばバイパスコンデンサ)を、電子製品10の適当な位置に備えるとよい。
また、電子製品10にノイズ対策を施す場合には、領域dの周波数帯におけるノイズレベルを、特性曲線c(デバイス30の耐久特性)が示すノイズレベル未満に抑制するとよい。このように、制御部22が領域dを求めることにより、電子製品10のノイズ低減を行う際のレベル指標を定めることも可能になる。
Since the EFT / B noise in the frequency band indicated by this region d causes a malfunction in the electronic product 10, an element or the like (for example, a bypass capacitor) that emits common mode noise in the frequency band to, for example, the reference ground 120. May be provided at an appropriate position on the electronic product 10.
Further, when noise countermeasures are applied to the electronic product 10, it is preferable to suppress the noise level in the frequency band of the region d to be lower than the noise level indicated by the characteristic curve c (durability characteristic of the device 30). In this way, when the control unit 22 obtains the region d, it is possible to determine the level index when noise reduction of the electronic product 10 is performed.

10電子製品
11計測装置
12ノイズ源
20プローブ
21入力部
22制御部
23記憶部
30デバイス
31Vdピン
32SGピン
120基準グラウンド
121,122伝送線路
10 Electronic products 11 Measuring equipment 12 Noise source 20 Probe 21 Input unit 22 Control unit 23 Storage unit 30 Device 31Vd pin 32SG pin 120 Reference ground 121,122 Transmission line

Claims (6)

ノイズ源が電子製品に備えられた伝送線路へコモンモードノイズの周波数をスイープしながら注入する第1過程と、
前記伝送線路を介して前記電子製品に備えられたデバイスの端子に注入された前記コモンモードノイズの各周波数におけるノイズレベルを示す周波数特性を測定する第2過程と、
前記デバイスに誤動作が発生する各ノイズ周波数におけるノイズレベルを示す耐久特性を取得する第3過程と、
前記周波数特性と前記耐久特性とから、前記電子製品に誤動作を発生させる前記コモンモードノイズの周波数帯を特定する第4過程と、
を有することを特徴とする電子製品の評価方法。
The first process in which the noise source injects the frequency of common mode noise into the transmission line provided in the electronic product while sweeping it.
The second process of measuring the frequency characteristic indicating the noise level at each frequency of the common mode noise injected into the terminal of the device provided in the electronic product via the transmission line, and the second process.
The third process of acquiring the durability characteristic indicating the noise level at each noise frequency at which the device malfunctions, and
A fourth process of identifying the frequency band of the common mode noise that causes a malfunction in the electronic product from the frequency characteristics and the durability characteristics, and
A method for evaluating an electronic product, which comprises.
前記第4過程は、
前記周波数特性を、横軸が前記コモンモードノイズの各周波数であり縦軸が前記コモンモードノイズの各周波数におけるノイズレベルである第1グラフに示した場合に、該第1グラフに示される特性曲線を周波数特性曲線とし、
前記耐久特性を、横軸が前記デバイスに誤動作が発生する各ノイズ周波数であり縦軸が前記デバイスに誤動作が発生する各周波数におけるノイズレベルである第2グラフに示した場合に、該第2グラフに示される特性曲線を耐久特性曲線としたとき、
前記周波数特性曲線が前記耐久特性曲線以上のノイズレベルになる周波数帯を、前記電子製品に誤動作を発生させる周波数帯であると特定する、
ことを特徴とする請求項1に記載の電子製品の評価方法。
The fourth process is
When the frequency characteristics are shown in the first graph in which the horizontal axis is each frequency of the common mode noise and the vertical axis is the noise level at each frequency of the common mode noise, the characteristic curve shown in the first graph. Is the frequency characteristic curve,
The second graph shows the durability characteristics when the horizontal axis represents each noise frequency at which the device malfunctions and the vertical axis represents the noise level at each frequency at which the device malfunctions. When the characteristic curve shown in is taken as the durability characteristic curve,
A frequency band in which the frequency characteristic curve has a noise level higher than or higher than the durability characteristic curve is specified as a frequency band that causes a malfunction in the electronic product.
The method for evaluating an electronic product according to claim 1.
前記第1過程は、
前記電子製品の2つの伝送線路に前記ノイズ源から同一振幅であって同位相の前記コモンモードノイズを注入し、
前記第2過程は、
前記2つの伝送線路に各々接続している前記デバイスの2つの端子間の電位差を測定することにより前記周波数特性を取得する、
ことを特徴とする請求項1または2に記載の電子製品の評価方法。
The first process is
The common mode noise having the same amplitude and the same phase is injected from the noise source into the two transmission lines of the electronic product.
The second process is
The frequency characteristic is acquired by measuring the potential difference between the two terminals of the device connected to each of the two transmission lines.
The method for evaluating an electronic product according to claim 1 or 2, wherein the method is characterized by the above.
電子製品に備えられた伝送線路へコモンモードノイズの周波数をスイープしながら注入するノイズ源と、
前記伝送線路を介して前記電子製品に備えられたデバイスの端子に注入された前記コモンモードノイズを測定する測定部と、
を備え、
前記測定部は、
前記デバイスの端子から前記コモンモードノイズを入力して所定様式のデータに変換する入力部と、
前記入力部から出力されたデータを用いて所定の演算処理を行う制御部と、
を備え、
前記制御部は、
前記デバイスの端子から入力した前記コモンモードノイズの各周波数におけるノイズレベルを示す周波数特性を表したデータを取得するとともに、前記デバイスに誤動作が発生する各ノイズ周波数におけるノイズレベルを示す耐久特性を表したデータを取得し、
前記周波数特性を表したデータと前記耐久特性を表したデータとを用いて、前記電子製品に誤動作を発生させる前記コモンモードノイズの周波数帯を特定する、
ことを特徴とする評価装置。
A noise source that injects the frequency of common mode noise into the transmission line provided in electronic products while sweeping it.
A measuring unit that measures the common mode noise injected into the terminals of the device provided in the electronic product via the transmission line, and a measuring unit.
Equipped with
The measuring unit
An input unit that inputs the common mode noise from the terminal of the device and converts it into data in a predetermined format.
A control unit that performs predetermined arithmetic processing using the data output from the input unit, and
Equipped with
The control unit
The data showing the noise level at each frequency of the common mode noise input from the terminal of the device is acquired, and the durability characteristic showing the noise level at each noise frequency at which the device malfunctions is shown. Get the data,
Using the data representing the frequency characteristics and the data representing the durability characteristics, the frequency band of the common mode noise that causes a malfunction in the electronic product is specified.
An evaluation device characterized by that.
前記制御部は、
前記周波数特性を、横軸が前記コモンモードノイズの各周波数であり縦軸が前記コモンモードノイズの各周波数におけるノイズレベルである第1グラフに示した場合に、該第1グラフに示される特性曲線を周波数特性曲線とし、
前記耐久特性を、横軸が前記デバイスに誤動作が発生する各ノイズ周波数であり縦軸が前記デバイスに誤動作が発生する各周波数におけるノイズレベルである第2グラフに示した場合に、該第2グラフに示される特性曲線を耐久特性曲線としたとき、
前記周波数特性曲線が前記耐久特性曲線以上のノイズレベルになる周波数帯を前記各データを用いた演算によって抽出し、前記電子製品に誤動作を発生させる周波数帯であると特定する、
ことを特徴とする請求項4に記載の評価装置。
The control unit
When the frequency characteristics are shown in the first graph in which the horizontal axis is each frequency of the common mode noise and the vertical axis is the noise level at each frequency of the common mode noise, the characteristic curve shown in the first graph. Is the frequency characteristic curve,
The second graph shows the durability characteristics when the horizontal axis represents each noise frequency at which the device malfunctions and the vertical axis represents the noise level at each frequency at which the device malfunctions. When the characteristic curve shown in is taken as the durability characteristic curve,
A frequency band in which the frequency characteristic curve has a noise level higher than or higher than the durability characteristic curve is extracted by an operation using the respective data, and is specified as a frequency band that causes a malfunction in the electronic product.
The evaluation device according to claim 4, wherein the evaluation device is characterized by the above.
前記ノイズ源は、
前記電子製品の2つの伝送線路に同一振幅であって同位相の前記コモンモードノイズを注入し、
前記測定部は、
前記2つの伝送線路に各々接続する前記デバイスの2つの端子間の電位差を測定することにより前記周波数特性を取得する、
ことを特徴とする請求項4または5に記載の評価装置。
The noise source is
The common mode noise having the same amplitude and the same phase is injected into the two transmission lines of the electronic product.
The measuring unit
The frequency characteristic is acquired by measuring the potential difference between the two terminals of the device connected to each of the two transmission lines.
The evaluation device according to claim 4 or 5.
JP2018154669A 2018-08-21 2018-08-21 Evaluation method and evaluation device for electronic products Active JP7075121B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2018154669A JP7075121B2 (en) 2018-08-21 2018-08-21 Evaluation method and evaluation device for electronic products

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2018154669A JP7075121B2 (en) 2018-08-21 2018-08-21 Evaluation method and evaluation device for electronic products

Publications (2)

Publication Number Publication Date
JP2020030073A JP2020030073A (en) 2020-02-27
JP7075121B2 true JP7075121B2 (en) 2022-05-25

Family

ID=69624289

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018154669A Active JP7075121B2 (en) 2018-08-21 2018-08-21 Evaluation method and evaluation device for electronic products

Country Status (1)

Country Link
JP (1) JP7075121B2 (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7461033B2 (en) 2020-05-29 2024-04-03 地方独立行政法人東京都立産業技術研究センター Electromagnetic noise immunity evaluation device
CN117321429A (en) 2021-05-21 2023-12-29 三菱电机株式会社 Device for detecting noise tolerance of IC, method for detecting noise tolerance of IC, and method for measuring internal impedance of IC
WO2023223414A1 (en) * 2022-05-17 2023-11-23 日本電信電話株式会社 Frequency band estimation device, frequency band estimation method, ems testing method, and frequency band estimation program

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005318797A (en) 2004-04-29 2005-11-10 Linear Technol Corp Frequency modulation method and its circuitry for inhibiting spectral noise of switching regulator
US20060097806A1 (en) 2004-11-04 2006-05-11 International Business Machines Corporation Wideband Gaussian White Noise Source
CN1996030A (en) 2006-12-22 2007-07-11 南京师范大学 Device for detecting internal impedance of conductive electromagnetic interference noise source
CN101577532A (en) 2009-06-09 2009-11-11 西安交通大学 Source impedance stable network
CN201708548U (en) 2010-06-01 2011-01-12 苏州泰思特电子科技有限公司 Differential-mode filter used for restraining transmission electromagnetic interference
JP2011142079A (en) 2010-01-06 2011-07-21 Lg Innotek Co Ltd Backlight unit, and display device using this
JP2015001436A (en) 2013-06-14 2015-01-05 ローム株式会社 Method for evaluating electric circuit
JP2017130917A (en) 2015-12-24 2017-07-27 株式会社Soken Differential communication apparatus and measuring method

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120112784A1 (en) * 2010-05-12 2012-05-10 Kohei Masuda Differential signal transmission line, ic package, and method for testing said differential signal transmission line and ic package

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005318797A (en) 2004-04-29 2005-11-10 Linear Technol Corp Frequency modulation method and its circuitry for inhibiting spectral noise of switching regulator
US20060097806A1 (en) 2004-11-04 2006-05-11 International Business Machines Corporation Wideband Gaussian White Noise Source
CN1996030A (en) 2006-12-22 2007-07-11 南京师范大学 Device for detecting internal impedance of conductive electromagnetic interference noise source
CN101577532A (en) 2009-06-09 2009-11-11 西安交通大学 Source impedance stable network
JP2011142079A (en) 2010-01-06 2011-07-21 Lg Innotek Co Ltd Backlight unit, and display device using this
CN201708548U (en) 2010-06-01 2011-01-12 苏州泰思特电子科技有限公司 Differential-mode filter used for restraining transmission electromagnetic interference
JP2015001436A (en) 2013-06-14 2015-01-05 ローム株式会社 Method for evaluating electric circuit
JP2017130917A (en) 2015-12-24 2017-07-27 株式会社Soken Differential communication apparatus and measuring method

Also Published As

Publication number Publication date
JP2020030073A (en) 2020-02-27

Similar Documents

Publication Publication Date Title
JP7075121B2 (en) Evaluation method and evaluation device for electronic products
US7355413B2 (en) Testing method/arrangement measuring electromagnetic interference of noise in a to-be-tested printed circuit board
CN110018388B (en) Method and device for inspecting multi-core cable, and method for manufacturing multi-core cable assembly
US7640477B2 (en) Calibration system that can be utilized with a plurality of test system topologies
JP4929797B2 (en) Semiconductor evaluation equipment
KR20080070689A (en) Testing apparatus, fixture board and pin electronics card
KR20050114580A (en) An apparatus for detecting defect at an interconnect in a circuit pattern and a defect detecting system therewith
CN117321429A (en) Device for detecting noise tolerance of IC, method for detecting noise tolerance of IC, and method for measuring internal impedance of IC
JP5105442B2 (en) Printed circuit board inspection apparatus and inspection method
JP6338830B2 (en) Method for evaluating a device including a plurality of electric circuits
JP5527266B2 (en) Electromagnetic noise distribution detector
US9470735B2 (en) Electric circuit evaluation method and electric circuit
Nguyen et al. Immunity Characterization of FPGA I/Os for Fault-Tolerant Circuit Designs against EMI
JP2012013446A (en) Pin electronics circuit and testing apparatus using the same
Bacher et al. Novel measurement set-ups of FTB stress propagation in an IC
Baccigalupi et al. A methodology for testing immunity of field programmable analog arrays to radiated electromagnetic field
KR102563797B1 (en) Quality measuring device, measuring method thereof and recording medium thereof
US9400300B2 (en) Electric circuit evaluation method
US9217769B2 (en) Ring oscillator testing with power sensing resistor
Lavarda et al. Characterization of the immunity of integrated circuits (ICs) at wafer level
KR101762383B1 (en) Method of measuring electrical length in semiconductor testing apparatus
CN116184095B (en) Electromagnetic interference injection probe and system
Ichikawa et al. Measurement-based analysis of electromagnetic immunity in LSI circuit operation
KR20150087119A (en) Apparatus and method for testing electronic device, and noise blocking module therefor
KR19990025832A (en) Inspection substrate with resonant circuit for measuring noise in specific frequency band

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20210416

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20220316

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20220405

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220411

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20220426

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20220506

R150 Certificate of patent or registration of utility model

Ref document number: 7075121

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150