JP7064427B2 - スイッチドキャパシタ電力増幅器の改善又は関連 - Google Patents

スイッチドキャパシタ電力増幅器の改善又は関連 Download PDF

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Publication number
JP7064427B2
JP7064427B2 JP2018206811A JP2018206811A JP7064427B2 JP 7064427 B2 JP7064427 B2 JP 7064427B2 JP 2018206811 A JP2018206811 A JP 2018206811A JP 2018206811 A JP2018206811 A JP 2018206811A JP 7064427 B2 JP7064427 B2 JP 7064427B2
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Japan
Prior art keywords
terminal
switch
switches
supply voltage
turned
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JP2018206811A
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Japanese (ja)
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JP2019110523A (ja
JP2019110523A5 (https=
Inventor
エルベルト・ベフトゥム
バ・アオ
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Stichting Imec Nederland
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Stichting Imec Nederland
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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/005—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements using switched capacitors, e.g. dynamic amplifiers; using switched capacitors as resistors in differential amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2171—Class D power amplifiers; Switching amplifiers with field-effect devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H03F3/2178—Class D power amplifiers; Switching amplifiers using more than one switch or switching amplifier in parallel or in series
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3022—CMOS common source output SEPP amplifiers
    • H03F3/3028—CMOS common source output SEPP amplifiers with symmetrical driving of the end stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001—Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/3061—Bridge type, i.e. two complementary controlled SEPP output stages
    • H03F3/3064—Bridge type, i.e. two complementary controlled SEPP output stages with symmetrical driving of the end stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/72—Gated amplifiers, i.e. amplifiers which are rendered operative or inoperative by means of a control signal
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/09—A balun, i.e. balanced to or from unbalanced converter, being present at the output of an amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/312—Indexing scheme relating to amplifiers the loading circuit of an amplifying stage comprising one or more switches
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/417—A switch coupled in the output circuit of an amplifier being controlled by a circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/421—Multiple switches coupled in the output circuit of an amplifier are controlled by a circuit
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/48—Indexing scheme relating to amplifiers the output of the amplifier being coupled out by a capacitor

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Amplifiers (AREA)
JP2018206811A 2017-12-18 2018-11-01 スイッチドキャパシタ電力増幅器の改善又は関連 Active JP7064427B2 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
EP17208089.7A EP3499718B1 (en) 2017-12-18 2017-12-18 Improvements in or relating to switched-capacitor power amplifiers
EP17208089.7 2017-12-18

Publications (3)

Publication Number Publication Date
JP2019110523A JP2019110523A (ja) 2019-07-04
JP2019110523A5 JP2019110523A5 (https=) 2021-09-09
JP7064427B2 true JP7064427B2 (ja) 2022-05-10

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Family Applications (1)

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JP2018206811A Active JP7064427B2 (ja) 2017-12-18 2018-11-01 スイッチドキャパシタ電力増幅器の改善又は関連

Country Status (3)

Country Link
US (1) US10862439B2 (https=)
EP (1) EP3499718B1 (https=)
JP (1) JP7064427B2 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10862425B2 (en) * 2019-04-25 2020-12-08 Shenzhen GOODIX Technology Co., Ltd. Differential switchable capacitors for radiofrequency power amplifiers
US12255653B2 (en) * 2021-06-24 2025-03-18 Intel Corporation Methods and devices for digital clock multiplication of a clock to generate a high frequency output

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006520159A (ja) 2003-03-10 2006-08-31 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ ３状態ｄ級増幅器
JP2016537908A (ja) 2013-09-10 2016-12-01 エフィシエント パワー コンヴァーション コーポレーション 高効率電圧モードｄ級トポロジ
JP2017526226A (ja) 2014-06-25 2017-09-07 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ スイッチドキャパシタ送信機回路及び方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102017400B (zh) * 2008-05-05 2013-07-31 Nxp股份有限公司 高效线性linc功率放大器
US8547177B1 (en) * 2010-05-12 2013-10-01 University Of Washington Through Its Center For Commercialization All-digital switched-capacitor radio frequency power amplification
CN106027014B (zh) * 2012-05-11 2019-10-01 意法半导体研发(深圳)有限公司 用于功率驱动器电路应用的电流斜率控制方法和装置
JP5743978B2 (ja) 2012-08-13 2015-07-01 株式会社東芝 電力増幅器および送信器
US9425758B2 (en) * 2012-09-17 2016-08-23 Samsung Electronics Co., Ltd. Wireless communication system with power amplifier mechanism and method of operation thereof
US20160336909A1 (en) * 2015-05-13 2016-11-17 Qualcomm Incorporated Switched capacitor power amplifier circuits and methods

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006520159A (ja) 2003-03-10 2006-08-31 コーニンクレッカ　フィリップス　エレクトロニクス　エヌ　ヴィ ３状態ｄ級増幅器
JP2016537908A (ja) 2013-09-10 2016-12-01 エフィシエント パワー コンヴァーション コーポレーション 高効率電圧モードｄ級トポロジ
JP2017526226A (ja) 2014-06-25 2017-09-07 クゥアルコム・インコーポレイテッドＱｕａｌｃｏｍｍ Ｉｎｃｏｒｐｏｒａｔｅｄ スイッチドキャパシタ送信機回路及び方法

Also Published As

Publication number Publication date
US20190190465A1 (en) 2019-06-20
JP2019110523A (ja) 2019-07-04
US10862439B2 (en) 2020-12-08
EP3499718B1 (en) 2021-07-07
EP3499718A1 (en) 2019-06-19

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