JP7045177B2 - Spattering equipment - Google Patents

Description

The present invention relates to a sputtering apparatus.

A sputtering apparatus is known that forms a predetermined thin film with respect to a film forming object conveyed along a conveying direction. Such a sputtering device includes a transport unit that transports the film-forming target along the transport direction, a target located in a region facing the film-forming target, and a magnetic circuit located on the side opposite to the film-forming target side with respect to the target. And have. The magnetic circuit swings along the transport direction on the side opposite to the film forming target side with respect to the target, whereby the target is spattered on the entire surface of the target facing the film forming target. It forms a magnetic field (see, for example, Patent Document 1).

Japanese Unexamined Patent Publication No. 2000-345335

By the way, in the above-mentioned sputtering apparatus, in order to limit the direction in which the sputter particles emitted from the target fly, a metal shield is arranged between the target and the film forming target, in other words, between the target and the conveying portion. Will be done. The shield has a through hole penetrating the shield in the direction in which the target and the film forming target face each other, and the sputter particles reach the film forming target through the through hole. The potential of the shield is set to the ground potential, in which case the shield acts as an anode with respect to the cathode containing the target.

Here, when the thin film is formed, the magnetic circuit swings as described above. Therefore, as the magnetic circuit swings, the opening edge of the shield and the magnetic circuit that partition the through hole in the swing direction Distance changes. Moreover, the shorter the distance between the open edge and the magnetic circuit, the higher the density of plasma formed on the surface to be sputtered of the target tends to be. Furthermore, the shorter the distance between the aperture edge and the magnetic circuit, the greater the proportion of spatter particles emitted from the target that are blocked from flying to the film formation target by the shield.

As described above, the amount of spattered particles emitted and the ratio of sputtered particles reaching the film forming target among the emitted sputtered particles change depending on the position of the magnetic circuit in the swing direction. Therefore, the amount of sputtered particles that reach the surface of the film formation target tends to vary.
An object of the present invention is to provide a sputtering apparatus capable of suppressing variation in the amount of sputtered particles reached in the plane of a film forming target.

The sputter device for solving the above problems has a swinging portion that swings the target connected to the power supply along the first direction, and a through hole located on the front side of the target and facing the target. While transporting the film-forming target in the first direction on the front side of the target and the anode, the transport portion for facing the target and the film-forming target through the through hole, and the transport portion located on the back side of the target, said. It is provided with a magnetic circuit in which the position in the first direction with respect to the anode is fixed and the position in the first direction overlaps with the position of the through hole in the first direction. The target includes a first target member and a second target member having a composition different from that of the first target member, and the first target member and the second target member are arranged in the first direction. Moreover, both have a state of facing the film forming target through the through hole.

In the sputtering device, a plurality of target members having different compositions are arranged along the first direction of the magnetic circuit, and the target members are sputtered to form a thin film by the sputtered particles emitted from each target member. can do. In such a sputtering device, if the amount of spattered particles reaching the surface of the film-forming target varies, the amount of sputtered particles reaching the film-forming target among the sputtered particles emitted from each target varies. Occurs. As a result, it becomes difficult to obtain a desired value in the composition of the thin film.

In this respect, according to the above configuration, since the position of the magnetic circuit with respect to the opening edge that partitions the through hole does not change in the first direction, the density of the plasma generated in the vicinity of the target does not change easily. As a result, it is possible to prevent the density of plasma generated around the surface to be sputtered of the target from changing even if the sputtered portion in the target changes as the position of the target with respect to the magnetic circuit changes. In addition, the proportion of the sputtered particles emitted from the target that is blocked by the anode from reaching the film forming target is kept substantially constant during the formation of the thin film. Therefore, it is possible to suppress the amount of spatter particles reaching in the plane of the film-forming surface. As a result, when a target including the first target member and the second target member is used, it becomes easy to set the composition in the thin film to a desired value.

The sputtering apparatus further includes a control unit that controls the driving of the swing unit and the transport unit, and the control unit is said to have the voltage applied to the target by the power source while the voltage is applied to the target. While the film forming target first passes through the region facing the target, the rocking portion is maintained in a state where either one of the first target member and the second target member faces the magnetic circuit. May be good.

According to the above configuration, in the thin film formed on the film forming target by the sputtering of the target, the sputter particles derived from the first target member or the sputter particles derived from the second target member are contained in the initial layer which is a layer in contact with the film forming target. The certainty of inclusion can be increased.

The sputtering apparatus further includes a swinging portion and a control unit for controlling the drive of the transporting portion, and the control unit is said to have the voltage applied to the target by the power source while the voltage is applied to the target. While the film forming target finally passes through the region facing the target, the rocking portion is maintained in a state where either one of the first target member and the second target member faces the magnetic circuit. May be good.

According to the above configuration, in the thin film formed on the film formation target by the sputtering of the target, the sputter particles derived from the first target member or the second target member are formed on the surface opposite to the surface in contact with the film formation target. It is possible to increase the certainty that the sputtered particles of origin are contained.

In the sputtering apparatus, a control unit for controlling the drive of the rocking portion is further provided, and the time for maintaining the first target member in a state facing the magnetic circuit is the first time, and the second target member is Is maintained in a state of facing the magnetic circuit for the second time, and the control unit has the first time and the first time while the voltage is applied to the target by the power source. The target may be oscillated by the oscillating portion so that the two hours are different from each other.

According to the above configuration, the sputter particles derived from the first target member and the spatter derived from the second target member discharged from the target toward the film forming target in a predetermined period according to the ratio of the second time to the first time. The ratio with the particles can be changed.

In the sputtering apparatus, a control unit for controlling the drive of the rocking portion is further provided, and the time for maintaining the first target member in a state facing the magnetic circuit is the first time, and the second target member is Is maintained in a state facing the magnetic circuit for the second time, and the control unit is in the first time and the first time during the period from the start to the end of applying the voltage to the target by the power supply. The target may be swung around the swing so that at least one of the second hours varies between the plurality of lengths.

According to the above configuration, at least one of the first time and the second time changes between a plurality of lengths, so that the target is subjected to the film formation target within a predetermined period while the voltage is applied to the target. The ratio of the sputter particles derived from the first target member and the sputter particles derived from the second target member that are emitted toward the target member can be changed. Thereby, the composition at each position can be made different from each other among a plurality of positions in the thickness direction of the thin film formed on the film forming target.

In the sputtering apparatus, the end face adjacent to the second target member in the first direction among the first target members is the first end face in the plan view facing the plane on which the target spreads, and the second target. Even if the end surface of the member adjacent to the first target member in the first direction is the second end surface and the first end surface and the second end surface overlap each other when viewed from the thickness direction of the target. good.

According to the above configuration, since a gap is not formed between the first target member and the second target member in the first direction, other members located in the gap between the first target member and the second target member spatter. Being suppressed.

The block diagram which shows the structure which looked at the top view of the sputtering apparatus of 1st Embodiment together with the film formation target of the sputtering apparatus. FIG. 3 is a block diagram showing a configuration in which the sputtering chamber included in the sputtering apparatus of the first embodiment is viewed from above together with a film forming target. The plan view which shows the structure of the target and the magnetic circuit provided in the sputtering apparatus of 1st Embodiment. The plan view which shows the partial structure of the target provided in the sputter chamber of 1st Embodiment. FIG. 3 is a cross-sectional view showing a partial configuration of an example of a target included in the sputter chamber of the first embodiment. FIG. 6 is a cross-sectional view showing a partial configuration of another example of the target provided in the sputter chamber of the first embodiment. The block diagram for demonstrating an example of the control method of the sputter chamber of 1st Embodiment. The block diagram for demonstrating an example of the control method of the sputter chamber of 1st Embodiment. The block diagram for demonstrating an example of the control method of the sputter chamber of 1st Embodiment. FIG. 5 is a cross-sectional view schematically showing an example of a thin film formed on a film forming target by the sputtering chamber of the first embodiment together with the film forming target. The operation diagram for demonstrating the operation in the sputtering apparatus of 1st Embodiment. The operation diagram for demonstrating the operation in the sputtering apparatus of 1st Embodiment. The operation diagram for demonstrating the operation in the sputtering apparatus of 1st Embodiment. The perspective view which shows the structure of the sputtering chamber in the sputtering apparatus of 2nd Embodiment. FIG. 6 is a cross-sectional view schematically showing another example of a thin film formed on a film forming object by a sputter chamber together with the film forming object.

[First Embodiment]
A first embodiment of the sputtering apparatus will be described with reference to FIGS. 1 to 13. In the following, the configuration of the sputtering apparatus, the configuration of the sputtering chamber, the configuration of the target, and the operation of the sputtering apparatus will be described in order.

[Structure of sputtering equipment]
The configuration of the sputtering apparatus will be described with reference to FIG.
As shown in FIG. 1, the sputtering apparatus 10 includes a loading / unloading chamber 11 and a sputtering chamber 12, and the two chambers are arranged along the transport direction D1 which is one direction. The carry-in / out chamber 11 carries in the film-forming target S before film formation fixed to the carrier C, and carries out the film-forming target S after film formation in which a predetermined thin film is formed on the film-forming surface Ss. The film-forming target S is, for example, a resin substrate, a silicon substrate, a glass substrate, or the like formed of various resins.

A gate valve 13 is located between the carry-in / out chamber 11 and the sputter chamber 12. The opening of the gate valve 13 allows the two chambers to communicate with each other, and the closing of the gate valve 13 blocks the ventilation between the two chambers.

Each chamber includes an exhaust unit 14, and each exhaust unit 14 reduces the pressure in the space partitioned by the chamber in which the exhaust unit 14 is mounted to a predetermined pressure. Each exhaust section 14 includes, for example, a pump and a valve. The sputtering apparatus 10 includes a conveying portion 15 extending along the conveying direction D1, and the conveying portion 15 extends from one end to the other end of the sputtering apparatus 10 in the conveying direction D1. The transport unit 15 transports the film forming target S fixed to the carrier C along the transport direction D1 in a state of standing along the substantially vertical direction. The transport unit 15 reciprocates the carrier C a plurality of times along the transport direction D1 while the thin film is being formed in the sputter chamber 12.

The transport unit 15 includes, for example, a rail extending along the transport direction D1, rollers arranged at predetermined intervals along the rail, and a motor for rotating the rollers. As the motor rotates the rollers, the carrier C located on the rail is conveyed along the conveying direction D1.

The sputter chamber 12 includes a shield 16, a cathode 20, and a magnetic circuit 30. The shield 16 regulates the flight direction of the sputtered particles emitted from the cathode 20. The shield 16 is an example of an anode. The cathode 20 forms a predetermined thin film on the film forming surface Ss of the film forming target S by the sputtered particles emitted from the cathode 20 by sputtering the target contained in the cathode 20. The cathode 20 swings along the transport direction D1. The magnetic circuit 30 forms a magnetic field for sputtering the target on the surface to be sputtered facing the film forming target S in the target. The magnetic circuit 30 swings the magnetic field along the height direction D3, which is a direction orthogonal to the transport direction D1. The height direction D3 is substantially parallel to the film forming surface Ss of the film forming target S. The cathode 20, the magnetic circuit 30, and the film forming target S face each other in the direction in which the cathode 20 and the magnetic circuit 30 face each other while the conveying unit 15 conveys the film forming target S in the sputtering chamber 12. It has a state of being lined up in a row along the direction D2.

The sputtering device 10 further includes a control unit 10C that controls the driving of the sputtering device 10. The control unit 10C controls the drive of the gate valve 13, the exhaust unit 14, the transport unit 15, the cathode swinging portion that swings the cathode 20, the magnetic circuit swinging portion that swings the magnetic circuit 30, and the like. , The sputtering apparatus 10 is allowed to form a film on the film forming target S.

In such a sputtering apparatus 10, the control unit 10C controls the sputtering apparatus 10, so that the carrier C carried in from the carry-in / out chamber 11 is conveyed from the carry-in / out chamber 11 to the sputtering chamber 12. Then, while the carrier C is reciprocated in the sputter chamber 12 along the transport direction D1, the target is sputtered in the sputter chamber 12, whereby a predetermined thin film is formed on the film forming surface Ss of the film forming target S. Will be done. The carrier C to which the film forming target S after film formation is fixed is conveyed from the sputter chamber 12 to the carry-in / out chamber 11 along the transport direction D1, and is carried out from the carry-in / out chamber 11 to the outside of the sputter device 10.

The sputtering apparatus 10 may be provided with at least a sputtering chamber 12. Further, the sputtering apparatus 10 may include other chambers such as a pretreatment chamber located upstream of the sputtering chamber 12 in the transport direction D1 and a post-processing chamber located downstream of the sputtering chamber 12 in the transport direction D1.

[Structure of spatter chamber]
The configuration of the sputter chamber 12 will be described in more detail with reference to FIGS. 2 and 3. FIG. 2 shows a schematic configuration of the sputter chamber 12.
As shown in FIG. 2, the sputter chamber 12 includes a vacuum chamber 41, which accommodates the film-forming target S and partitions a film-forming space where the surface to be sputtered of the target 21 is exposed. The film forming space defined by the vacuum chamber 41 is depressurized to a predetermined pressure by the exhaust unit 14. In FIG. 2, for convenience of illustration, the cathode 20 and the magnetic circuit 30 are housed in the film forming space, but at least the sputtered surface of the target 21 of the cathode 20 and the magnetic circuit 30 is exposed in the vacuum chamber 41. Other than that, it may be located outside the vacuum chamber 41.

The sputter chamber 12 includes a cathode swinging portion 51 and a power supply 52. The cathode swinging portion 51 swings the target 21 connected to the power supply 52 along the transport direction D1. Among the surfaces included in the target 21, the surface facing the film forming target S is the surface to be sputtered, that is, the front surface, and the surface opposite to the front surface is the back surface. The sputter chamber 12 includes a shield 16 located on the front side of the target 21. The shield 16 has a through hole 16a facing the target 21.

The shield 16 is located between the target 21 and the transport portion 15 in the facing direction D2. The shield 16 is made of metal, and the potential of the shield 16 is the ground potential. In the transport direction D1, the width of the through hole 16a is substantially equal to the width of the target 21, but may be smaller than the width of the target 21 or larger than the width of the target 21.

The transport unit 15 transports the film-forming target S along the transport direction D1 and causes the target 21 and the film-forming target S to face each other through the through hole 16a. The magnetic circuit 30 is located on the back side of the target 21, and the position of the transport direction D1 with respect to the shield 16 is fixed. The position of the magnetic circuit 30 in the transport direction D1 overlaps with the position of the through hole 16a in the transport direction D1. That is, the magnetic circuit 30 and the through hole 16a overlap each other when viewed from the facing direction D2.

The target 21 includes a first target member 21A and a second target member 21B. The second target member 21B has a composition different from that of the first target member 21A. The first target member 21A and the second target member 21B are aligned along the transport direction D1 and both face the film forming target S through the through hole 16a. The main component of each target member may be a simple substance of a metal, an alloy containing a plurality of metal elements, or a metal compound. The metal compound may be, for example, an oxide or a nitride.

The cathode 20 further comprises a metal backing plate 22 to which the target 21 is fixed. The power supply 52 is connected to the backing plate 22 so that the power supply 52 is connected to the target 21. When the power supply 52 applies a voltage to the backing plate 22, a voltage is applied to the target 21.

The cathode 20 further includes a floating portion 23 fixed to the backing plate 22. The floating portion 23 has an annular shape that surrounds the entire edge of the target 21 in a plan view facing the plane on which the target 21 extends. The floating portion 23 may be located only in a part around the edge of the target 21 in a plan view facing the plane on which the target 21 spreads. An insulating material can be used as the material for forming the floating portion 23. For the insulator, for example, various resins or various ceramics can be used.

The potential of the target 21 changes depending on the relative position of the shield 16 with respect to the through hole 16a, and thereby the magnitude of the voltage applied to the target 21 also changes. The floating portion 23 changes the potential of the floating portion 23 according to the potential around the floating portion 23. Therefore, when the target 21 swings along the transport direction D1, the floating portion 23 plays a part in the change in the potential generated in the target 21, so that the fluctuation in the potential in the target 21 is alleviated.

Therefore, even if the position of the metal backing plate 22 with respect to the metal shield 16 changes due to the swing of the backing plate 22, the potential of the floating portion 23 located around the target 21 is the floating potential. Therefore, it is possible to prevent the magnitude of the voltage applied to the target 21 fixed to the backing plate 22 from changing. The fluctuation of the voltage applied to the target 21 changes the state of the plasma formed around the surface to be sputtered. However, changing the position of the target 21 in the transport direction D1 requires less variation in the plasma state than changing the position of the magnetic circuit 30 with respect to the shield 16 in the transport direction D1. Further, the cathode 20 does not have to include the floating portion 23.

The magnetic circuit 30 includes a first magnet 31, a second magnet 32, and a yoke 33. The first magnet 31 has a rod shape, and the second magnet 32 has an annular shape surrounding the first magnet 31. The first magnet 31 and the second magnet 32 are fixed to the yoke 33. The sputter chamber 12 further includes a magnetic circuit swinging portion 53, which swings the magnetic circuit 30 along the height direction D3.

The magnetic circuit 30 swings along the height direction D3 orthogonal to the transport direction D1 in the direction along the film forming surface Ss of the film forming target S. The position of the magnetic circuit 30 in the transport direction D1 is fixed with respect to the sputter chamber 12. On the other hand, the film forming target S is conveyed by the conveying unit 15 along the conveying direction D1. Therefore, in the magnetic circuit 30, the portion of the magnetic circuit 30 facing the film-forming target S changes as the film-forming target S is transported by the transport unit 15. In other words, the relative position of the magnetic circuit 30 with respect to the film forming target S changes as the film forming target S is conveyed along the conveying direction D1.

In the sputter chamber 12, the portion of the magnetic circuit 30 facing the film forming target S changes depending on the transport of the film forming target S, while the magnetic circuit 30 swings along the direction orthogonal to the transport direction D1. Therefore, it is possible to prevent the swing speed of the magnetic circuit 30 from changing with respect to the film forming target S due to the swing of the magnetic circuit 30. Moreover, in the height direction D3 orthogonal to the transport direction D1, the range sputtered by the target 21 and the range in which the sputtered particles fly is expanded, and the variation in the density of the spattered particles emitted from the target 21 is suppressed. .. As a result, it is possible to suppress variations in the thickness of the film formed on the film-forming target S in the transport direction of the film-forming target S. Further, it is possible to prevent the target 21 from being locally sputtered and the efficiency of use of the target 21 from being lowered.

The sputter chamber 12 further includes a gas supply unit 54, and the gas supply unit 54 supplies gas for generating plasma at a predetermined flow rate into the film forming space partitioned by the vacuum chamber 41. The gas supply unit 54 is, for example, a mass flow controller, and is connected to a cylinder located outside the sputtering device 10.

In the sputter chamber 12, plasma is generated in the vacuum chamber 41 by the power supply 52 applying a voltage to the backing plate 22 after the gas supply unit 54 starts supplying gas to the film forming space. Then, the surface to be sputtered of the target 21 is sputtered by the ions in the plasma, so that a predetermined film is formed on the film-forming surface Ss of the film-forming target S.

The cathode swinging portion 51 and the magnetic circuit swinging portion 53 include, for example, a power unit that generates power for swinging the object and a transmission unit that transmits the power to the object. The object of the cathode swinging portion 51 is the cathode 20, and the object of the magnetic circuit swinging portion 53 is the magnetic circuit 30.

The transmission unit includes, for example, a screw shaft extending along the moving direction of each object and a nut that meshes with the screw shaft and is fixed to the object, and the power unit rotates, for example, the screw shaft. It is a motor. The motor rotates the screw shaft in the first rotation direction and the second rotation direction opposite to the first rotation direction. In each swinging portion, the motor rotates the screw shaft in the first rotation direction to move the object along the movement direction, and the motor rotates the screw shaft in the second rotation direction to cause the object to move. , Along the movement direction, the screw shaft moves in the opposite direction to that when the screw shaft rotates in the first rotation direction. The moving direction of the cathode swinging portion 51 is the transport direction D1, and the moving direction of the magnetic circuit swinging portion 53 is the height direction D3.

The control unit 10C is electrically connected to the power unit included in each swing unit. The control unit 10C outputs a control signal for controlling the drive of the power unit to the power unit, and the power unit is driven in response to the control signal.

FIG. 3 shows the magnetic circuit 30, the target 21, and the film forming target S as seen from the facing direction D2. Further, FIG. 3 shows a swinging range of the magnetic circuit 30 and a swinging range of the target 21. In FIG. 3, for convenience of illustration, the magnetic circuit 30, the target 21, and the members other than the film forming target S are not shown.

As shown in FIG. 3, the target 21 and the film forming target S overlap each other at a predetermined position in the transport direction D1 when viewed from the facing direction D2, and the magnetic circuit 30 and the target 21 overlap each other. More specifically, when viewed from the facing direction D2, the range in which the target 21 swings along the transport direction D1 overlaps in a part of the range in which the film forming target S is transported along the transport direction D1. As a result, the target 21 and the film forming target S overlap each other when viewed from the facing direction D2. Further, the magnetic circuit 30 and the target 21 overlap each other in at least a part of the range in which the target 21 swings along the transport direction D1 when viewed from the facing direction D2.

In the height direction D3, the length of the target 21 is longer than the length of the film forming target S. In order to allow the sputtered particles to reach the entire height direction D3 of the film forming target S, it is preferable that the length of the target 21 is longer than the length of the film forming target S in the height direction D3.

In the height direction D3, the length of the magnetic circuit 30 is longer than the length of the target 21. In the height direction D3, in order to form a magnetic field over the entire surface to be sputtered of the target 21, it is preferable that the length of the magnetic circuit 30 is longer than the length of the target 21 in the height direction D3. When the length of the magnetic circuit 30 is shorter than the length of the target 21, it is preferable that the magnetic circuit 30 swings along the height direction D3 so as to overlap the entire target 21 in the height direction D3.

[Target configuration]
The configuration of the target 21 will be described in more detail with reference to FIGS. 4 to 6. FIG. 4 shows the planar structure of the target 21 in a plan view facing the plane on which the target 21 extends. Further, FIG. 5 shows, in an example of the target 21, a cross-sectional structure of the target 21 extending along the transport direction D1 and along a plane orthogonal to the plane on which the target 21 extends. FIG. 6 shows, in another example of the target 21, a cross-sectional structure of the target 21 extending along the transport direction D1 and along a plane orthogonal to the plane on which the target 21 extends.

As shown in FIG. 4, in a plan view facing the plane on which the target 21 spreads, the end surface of the first target member 21A adjacent to the second target member 21B in the transport direction D1 is the first end surface 21Ae, and the second end surface 21Ae. Among the target members 21B, the end surface adjacent to the first target member 21A in the transport direction D1 is the second end surface 21Be. When viewed from the thickness direction of the target 21, the first end surface 21Ae and the second end surface 21Be overlap each other.

As shown in FIG. 5, in an example of the target 21, among the end faces of the first target member 21A, the end face facing the second target member 21B is the first end face 21Ae. The first end surface 21Ae is a plane extending along the height direction D3. The angle formed by the plane on which the first target member 21A extends and the first end surface 21Ae is the inclination angle θ. That is, the first end surface 21Ae is an inclined surface.

Among the end faces of the second target member 21B, the end face facing the first target member 21A is the second end face 21Be. The second end surface 21Be is a plane extending along the height direction D3. The angle formed by the plane on which the second target member 21B extends and the second end surface 21Be is the inclination angle θ, and the inclination angle θ is equal to the inclination angle θ in the first end surface 21Ae. That is, the second end surface 21Be is an inclined surface. The second end face 21Be is parallel to the first end face 21Ae over the entire height direction D3.

As shown in FIG. 6, in another example of the target 21, the surface fixed to the backing plate 22 is the back surface 21R, and the surface opposite to the back surface 21R is the front surface 21F. The first end surface 21Ae includes the back surface 21R of the target 21, and also includes the first protrusion Ae1 protruding toward the second target member 21B closer to the back surface than the center in the thickness direction of the target 21. The first protrusion Ae1 is located on the entire height direction D3 of the first end surface 21Ae.

The second end surface 21Be includes the surface 21F of the target 21, and also includes the second protrusion Be1 protruding toward the first target member 21A closer to the surface than the center in the thickness direction of the target 21. The second protrusion Be1 is located on the entire height direction D3 of the second end surface 21Be.

According to these targets 21, since a gap is not formed between the first target member 21A and the second target member 21B in the transport direction D1, the position is located in the gap between the first target member 21A and the second target member 21B. It is possible to prevent other members from being sputtered. In the cathode 20 described above, since both the first target member 21A and the second target member 21B are fixed to the backing plate 22, the gap between the two target members in the transport direction D1 causes spatter of the backing plate 22. It is suppressed to make it.

[Spatter chamber control method]
An example of the control method of the sputter chamber 12 will be described with reference to FIGS. 7 to 9. Note that FIGS. 7 to 9 show the structure of the shield 16 and the cross-sectional structure of the magnetic circuit 30 along a plane extending along the transport direction D1 and the facing direction D2 for convenience of illustration. The control unit 10C can control the drive of the sputter chamber 12 as follows, for example.

The control unit 10C can control the drive of the transport unit 15 and the drive of the cathode swing unit 51 as follows while the voltage is applied to the target 21 by the power supply 52. That is, in the control unit 10C, one of the first target member 21A and the second target member 21B faces the cathode swinging portion 51 while the film forming target S first passes through the region facing the target 21. It can be maintained in a state of overlapping with the magnetic circuit 30 in D2.

Further, the control unit 10C can control the drive of the transport unit 15 and the drive of the cathode swing unit 51 as follows while the voltage is applied to the target 21 by the power supply 52. That is, in the control unit 10C, one of the first target member 21A and the second target member 21B faces the cathode swinging portion 51 while the film forming target S finally passes through the region facing the target 21. It can be maintained in a state of overlapping with the magnetic circuit 30 in D2.

For example, as shown in FIG. 7, when only the first target member 21A overlaps with the magnetic circuit 30 in the facing direction D2 in the target 21, only the spatter particles derived from the first target member 21A form a film. Fly toward the target S. In this state, during the period from the start to the end of applying the voltage to the target 21, the transport unit 15 first passes the region facing the target 21 to the film forming target S. As a result, it is possible to form an initial layer formed from the sputtered particles derived from the first target member 21A as the initial layer of the thin film.

According to such a control method, for example, the initial layer formed from the sputtered particles derived from the first target member 21A is compared with the initial layer formed from the sputtered particles derived from the second target member 21B, and the film formation target S is Any layer having a high adhesion to the film can enhance the adhesion between the film-forming target S and the thin film.

Alternatively, during the period from the start to the end of the application of the voltage to the target 21, the transport unit 15 finally passes the region facing the target 21 to the film forming target S. As a result, it is possible to form a surface formed of sputter particles derived from the first target member 21A as a surface of the thin film opposite to the surface in contact with the film forming target S.

According to such a control method, for example, the surface formed from the sputtered particles derived from the first target member 21A has a surface with respect to the film covering the thin film as compared with the surface formed from the sputtered particles derived from the second target member 21B. When it has a property of high adhesion, the adhesion between the thin film and the film covering the thin film can be enhanced.

Further, as shown in FIG. 8, when only the second target member 21B overlaps with the magnetic circuit 30 in the facing direction D2 in the target 21, only the spatter particles derived from the second target member 21B form a film. Fly toward the target S. In this state, during the period from the start to the end of applying the voltage to the target 21, the transport unit 15 first passes the region facing the target 21 to the film forming target S. This makes it possible to form an initial layer formed from sputtered particles derived from the second target member 21B as the initial layer of the thin film.

According to such a control method, for example, the initial film formed from the sputtered particles derived from the second target member 21B is compared with the initial layer formed from the sputtered particles derived from the first target member 21A, and the film formation target S. If the layer has a property of having high adhesion to the film, the adhesion between the film-forming target S and the thin film can be improved.

Alternatively, during the period from the start to the end of the application of the voltage to the target 21, the transport unit 15 finally passes the region facing the target 21 to the film forming target S. As a result, as the surface of the thin film, a surface formed from the sputtered particles derived from the second target member 21B can be formed.

According to such a control method, for example, the surface formed from the sputtered particles derived from the second target member 21B is relative to the film covering the thin film as compared with the surface formed from the sputtered particles derived from the first target member 21A. When it has a property of high adhesion, the adhesion between the thin film and the film covering the thin film can be enhanced.

As described above, according to the control method described above, in the thin film formed on the film forming target S by the sputtering of the target 21, the sputter particles derived from the first target member 21A are formed on the initial layer which is a layer in contact with the film forming target S. Alternatively, it is possible to increase the certainty that sputtered particles derived from the second target member 21B are contained. Alternatively, it is possible to increase the certainty that the surface of the thin film formed on the film formation target S by the sputtering of the target 21 contains the sputter particles derived from the first target member 21A or the sputter particles derived from the second target member 21B. ..

On the other hand, as shown in FIG. 9, when a part of each target member overlaps with the magnetic circuit 30 in the facing direction D2 in the target 21, spatter particles derived from each target member are formed. Fly toward the membrane target S. Therefore, a layer containing both the element contained in the first target member 21A and the element contained in the second target member 21B is formed in the film forming target S.

Moreover, depending on the relative position of the target 21 with respect to the magnetic circuit 30 in the transport direction D1, the ratio of the sputter particles derived from the first target member 21A to the total sputtered particles emitted from the target 21 and the ratio derived from the second target member 21B. It is possible to change the proportion occupied by the sputtered particles. In other words, the larger the area of each target member that overlaps with the magnetic circuit 30 in the facing direction D2, the more sputter particles are emitted from each target member. Therefore, the composition of the thin film formed on the film forming target S can be changed by changing the position of the target 21 with respect to the magnetic circuit 30 in the transport direction D1, that is, by swinging the target 21 along the transport direction D1. can.

As described above, according to the sputtering apparatus 10 of the present embodiment, by using the position of the target 21 with respect to the magnetic circuit 30 described above with reference to FIGS. 7 to 9, only one target 21 is used to each other. Multiple types of thin films having different compositions can be formed. Further, even in one thin film, the composition at each position can be different from each other at a plurality of positions different from each other in the thickness direction.

Further, the control unit 10C may control the drive of the sputter chamber 12 as follows. The time for the first target member 21A to be maintained in a state facing the magnetic circuit 30 is the first time, and the time for the second target member 21B to be maintained in a state facing the magnetic circuit 30 is the second time. The control unit 10C causes the cathode swinging unit 51 to swing the target 21 so that the first time and the second time are different from each other while the voltage is applied to the target 21 by the power supply 52. Can be done.

According to such a control method, the sputter particles derived from the first target member 21A and the second target, which are discharged from the target 21 toward the film forming target S in a predetermined period by the ratio of the second time to the first time, and the second target. The ratio with the sputtered particles derived from the member 21B can be changed. Further, by changing the ratio of the second time to the first time among a plurality of values, the sputter particles derived from the first target member 21A discharged toward the film forming target S using one target 21. And the ratio of the sputtered particles derived from the second target member 21B can be changed between a plurality of ratios.

Further, the control unit 10C has a cathode so that at least one of the first time and the second time changes between a plurality of lengths from the start to the end of the application of the voltage to the target 21 by the power supply 52. The target 21 can be swung by the swinging portion 51.

According to such a control method, the following effects can be obtained by changing at least one of the first time and the second time between a plurality of lengths. That is, the sputter particles derived from the first target member 21A and the sputter particles derived from the second target member 21B, which are discharged from the target 21 toward the film forming target S within a predetermined period while the voltage is applied to the target 21. The ratio with spattered particles can be changed. Thereby, the composition at each position can be made different from each other among the plurality of positions in the thickness direction of the thin film formed on the film forming target S.

It should be noted that when the state of the target 21 described above with reference to each of FIGS. 7 to 9 is changed from one state to another, that is, when the target 21 is swung along the transport direction D1, the target 21 may be in a state of facing the film forming target S through the through hole 16a, or may be in a state of not facing the film forming target S.

Further, the position of the target 21 in the transport direction D1 may or may not be fixed at the same position while the film forming target S passes through the region facing the target 21 once or more. That is, the target 21 may swing along the transport direction D1 while the film forming target S passes through the region facing the target 21.

[Thin film formed by spatter chamber]
With reference to FIG. 10, the thin film formed on the film forming target S by the sputter chamber 12 will be described.
As shown in FIG. 10, according to the sputtering chamber 12, a thin film composed of an alloy containing a plurality of metal elements can be formed as the thin film TF formed on the film forming target S. An example of such a thin film TF made of an alloy is an indium tin oxide (ITO) film. When forming the ITO film, an indium oxide (In ₂ O ₃ ) target member can be used as the first target member 21A, and a tin oxide (Sn ₂ O ₃ ) target member can be used as the second target member 21B.

For example, when an ITO film is formed on the film forming target S, the initial layer in contact with the film forming target S contains a larger proportion of tin oxide than the surface side layer located closer to the surface of the ITO film than the initial layer. It is preferable to form a layer. As a result, the time for heating the ITO film in order to crystallize the ITO film can be shortened as compared with the ITO film in which the ratio of tin oxide in the initial layer is smaller than that in the surface side layer.

As an example of the alloy thin film TF, a tungsten-doped indium oxide (IWO) film can be mentioned. When forming the IWO film, an In ₂ O ₃ target member can be used as the first target member 21A, and a tungsten (W) target member can be used as the second target member 21B. Since it is difficult to form a target that is a sintered body of IWO, it is also difficult to form an IWO film by a sputtering method using a single IWO target. On the other hand, according to the sputtering apparatus 10 in the present embodiment, the IWO film can be formed by preparing the In ₂ O ₃ target member and the W target member, which are easier to form than the IWO target.

[Action of sputtering equipment]
The operation of the sputtering apparatus 10 will be described with reference to FIGS. 11 to 13. In addition, in FIGS. 11 to 13, for convenience of illustration, the structure of the shield 16 and the structure of the magnetic circuit 30 are along a plane extending along the transport direction D1 and the opposite direction D2 as in FIGS. 7 to 9. The cross-sectional structure is shown.

As shown in FIG. 11, in the facing direction D2, a part of the first target member 21A and a part of the second target member 21B overlap the magnetic circuit 30. As a result, on the side opposite to the backing plate 22 with respect to the target 21, a leakage magnetic field is formed in the portion of the first target member 21A that overlaps with the magnetic circuit 30 in the facing direction D2, and the leakage magnetic field is formed in the second target member 21B. Then, a leakage magnetic field is formed in a portion of the facing direction D2 that overlaps with the magnetic circuit 30. By generating plasma in the vicinity of the target 21 by such a leakage magnetic field, both the first target member 21A and the second target member 21B are sputtered.

Sputtered particles discharged from each target member by sputtering of each target member fly toward the film forming target S through the through hole 16a of the shield 16. As a result, a thin film TF containing both the elements constituting the first target member 21A and the elements constituting the second target member 21B is formed on the film forming surface Ss of the film forming target S.

As shown in FIG. 12, by swinging the target 21 along the transport direction D1, the portion of the target 21 that overlaps with the magnetic circuit 30 in the facing direction D2 is changed. For example, of the two target members, only the second target member 21B changes the position of the target 21 in the transport direction D1 so as to overlap the magnetic circuit 30 in the facing direction D2. At this time, since the position of the magnetic circuit 30 in the transport direction D1 does not change, the distance between the magnetic circuit 30 in the transport direction D1 and the opening edge that divides the through hole 16a of the shield 16 does not change. Therefore, the sputter particles emitted from the target 21 toward the film forming target S are changed to sputter particles derived from the second target member 21B, while being on the opposite side of the backing plate 22 with respect to the second target member 21B. The density of the formed plasma is unlikely to change even before the target 21 swings.

As a result, it is possible to suppress the change in the density of the plasma generated around the surface to be sputtered even if the sputtered portion in the target 21 changes due to the change in the position of the target 21 with respect to the magnetic circuit 30. .. Further, among the sputtered particles emitted from the target 21, the ratio at which the arrival at the film forming target S is blocked by the shield 16 is kept substantially constant during the formation of the thin film TF. Therefore, it is possible to suppress the amount of spatter particles reaching within the surface of the film-forming surface Ss. As a result, when the target 21 including the first target member 21A and the second target member 21B is used, when forming a thin film of the alloy, it becomes easy to set the composition of the thin film to a desired value.

On the other hand, as shown in FIG. 13, in the configuration in which the magnetic circuit 30 swings, the opening edge and magnetism of the shield 16 that divides the through hole 16a in the transport direction D1 due to the swing of the magnetic circuit 30. The distance to the circuit 30 changes. Moreover, the shorter the distance between the opening edge and the magnetic circuit 30, the higher the density of plasma formed on the surface to be sputtered of the target 21 tends to be. Further, the shorter the distance between the opening edge and the magnetic circuit 30, the larger the proportion of the spatter particles emitted from the target 21 in which the shield 16 blocks the flight to the film-forming target S. ..

As described above, the amount of spattered particles emitted and the ratio of sputtered particles reaching the film forming target among the emitted sputtered particles change depending on the position of the magnetic circuit 30 in the transport direction D1. Therefore, the amount of sputtered particles that reach in the plane of the film forming target S tends to vary. Moreover, in order to make the composition of the thin film TF a desired composition, the fluctuation in the amount of sputtered particles emitted from each target member and the fluctuation in the ratio of the sputtered particles to which the flight to the film forming target S is blocked are observed. Need to consider. Therefore, it is difficult to obtain a desired value in the composition of the thin film.

As described above, according to the first embodiment of the sputtering apparatus, the effects listed below can be obtained.
(1) It is possible to suppress the amount of spatter particles reaching within the surface of the film-forming surface Ss. As a result, when the target 21 including the first target member 21A and the second target member 21B is used, when forming a thin film of the alloy, it becomes easy to set the composition of the thin film to a desired value.

(2) In the thin film formed on the film forming target S by the sputtering of the target 21, the initial layer which is a layer in contact with the film forming target S is derived from the sputter particles derived from the first target member 21A or the second target member 21B. It is possible to increase the certainty that sputtered particles are contained.

(3) In the thin film formed on the film forming target S by the sputtering of the target 21, sputtered particles derived from the first target member 21A or a second surface on the surface opposite to the surface in contact with the film forming target S. It is possible to increase the certainty that the target member 21B contains sputtered particles derived from the material.

(4) Depending on the ratio of the second time to the first time, the sputter particles derived from the first target member 21A discharged from the target 21 toward the film forming target S and the second target member 21B have a predetermined period. The ratio with the derived sputter particles can be changed.

(5) By changing at least one of the first time and the second time between a plurality of lengths, the target 21 is transferred to the film forming target S in a predetermined period while the voltage is applied to the target 21. The ratio of the sputter particles derived from the first target member 21A and the sputter particles derived from the second target member 21B that are emitted toward the target member 21B can be changed. Thereby, the composition at each position can be made different from each other among a plurality of positions in the thickness direction of the thin film TF formed on the film forming target S.

(6) Since a gap is not formed between the first target member 21A and the second target member 21B in the transport direction D1, other members located in the gap between the first target member 21A and the second target member 21B are present. Spattering is suppressed.

The above-mentioned first embodiment can be appropriately modified and implemented as follows.
Each of the first target member 21A and the second target member 21B may have a shape in which the first end surface 21Ae and the second end surface 21Be do not overlap when viewed from the thickness direction of the target 21. For example, in the first target member 21A and the second target member 21B, the first end surface 21Ae and the second end surface 21Be extend along a direction substantially perpendicular to the surface of the target 21, and the first end surface 21Ae and the first end surface 21Ae. It may be in contact with the second end surface 21Be.

Alternatively, regardless of the shapes of the first end surface 21Ae and the second end surface 21Be, a gap may be located between the first end surface 21Ae and the second end surface 21Be in the transport direction D1. In this case, if the gap between the first end surface 21Ae and the second end surface 21Be is large enough to allow both the first target member 21A and the second target member 21B to face the through hole 16a. good.
Even with such a configuration, the effects according to the above-mentioned (1) to (5) can be obtained.

[Second Embodiment]
A second embodiment of the sputtering apparatus will be described with reference to FIGS. 14 and 15. The second embodiment is different from the first embodiment in the structure of the spatter chamber and the structure of the thin film preferably formed by using such a spatter chamber. Therefore, in the following, the differences between the first embodiment and the second embodiment will be described in detail. On the other hand, the configuration common to the first embodiment in the second embodiment is designated by the same reference numerals as those in the first embodiment, and detailed description thereof will be omitted.

[Structure of spatter chamber]
The configuration of the spatter chamber will be described with reference to FIG.
As shown in FIG. 14, the sputter chamber 60 includes a substantially cylindrical rotating drum 61. The rotary drum 61 is an example of a transport unit. The rotary drum 61 rotates with the central axis A of the rotary drum 61 as the center of rotation. The outer peripheral surface 61S of the rotary drum 61 is composed of a plurality of support surfaces 61Ss having a rectangular shape extending along the central axis A. Each support surface 61Ss is configured to be able to support a plurality of film forming targets S. Each support surface 61Ss may be configured to support the film formation target S by the adhesiveness of the support surface 61Ss, or may have a groove into which the film formation target S fits.

A target 21 facing a part of the rotary drum 61 is located outside the rotary drum 61 in the radial direction of the rotary drum 61. The target 21 has a plate shape extending along the central axis A. One of the tangential directions of the rotating drum 61 is an example of the first direction. The film-forming target S is conveyed along the first direction, and the target 21 swings along the first direction.

A shield 16 is located between the rotary drum 61 and the target 21 in the radial direction of the rotary drum 61. In the radial direction of the rotating drum 61, the magnetic circuit 30 is located on the side opposite to the shield 16 with respect to the target 21.

Although omitted in FIG. 14, the sputtering chamber 60 has a cathode swinging portion 51, a power supply 52, a magnetic circuit swinging portion 53, and a gas supply section 54, similarly to the sputtering chamber 12 of the first embodiment. It is equipped with. Further, the rotary drum 61 is housed in the vacuum chamber 41, and the surface to be sputtered of the target 21 is exposed in the film forming space defined by the vacuum chamber 41.

In such a spatter chamber 60, when a thin film is formed on each film formation target S, the rotary drum 61 rotates a plurality of times with the central axis A as the center of rotation. As a result, each film forming target S passes through the region facing the target 21 along the first direction as many times as the rotation speed of the rotating drum 61. When each film forming target S passes through the region facing the target 21, the sputter particles emitted from the target 21 fly toward each film forming target S.

Therefore, a thin film having a thickness corresponding to the rotation speed of the rotating drum 61 is formed on each film forming target S. Further, when the first target member 21A faces the magnetic circuit 30, the rotating drum 61 allows each film forming target S to pass in front of the target 21, so that the film forming target S has the first target member. A thin film is formed by the sputtered particles emitted from 21A. On the other hand, when the second target member 21B faces the magnetic circuit 30, the rotating drum 61 allows each film forming target S to pass in front of the target 21, so that the film forming target S has a second target. 2 A thin film is formed by the sputtered particles emitted from the target member 21B.

Further, when both the first target member 21A and the second target member 21B face the magnetic circuit 30, the sputter particles discharged from the first target member 21A and the second target are included in the film forming target S. A thin film containing the sputtered particles emitted from the member 21B is formed.

[Thin film formed by spatter chamber]
With reference to FIG. 15, the configuration of the thin film TF formed on the film forming target S by the sputtering chamber 60 will be described.

As shown in FIG. 15, according to the sputtering chamber 60, as the thin film TF formed on the film forming target S, a multilayer film in which the first layer TFa and the second layer TFb are alternately formed can be formed. .. The first layer TFa is a layer made of sputtered particles emitted from the first target member 21A, and the second layer TFb is a layer made of sputtered particles emitted from the second target member 21B.

Moreover, according to the sputtering chamber 60, an intermediate layer containing an element constituting the first layer TFa and an element constituting the second layer TFb is formed between the first layer TFa and the second layer TFb. Can be done. According to such an intermediate layer, the film characteristics of the thin film TF and the adhesion between the first layer TFa and the second layer TFb constituting the thin film TF can be improved as compared with the configuration without the intermediate layer. It will also be possible.

As an example of such a thin film TF, a thin film TF in which the first layer TFa is a niobium oxide (Nb ₂ O ₅ ) layer and the second layer TFb is a silicon dioxide (SiO ₂ ) layer can be mentioned. The thin film TF functions as an antireflection film. In this case, an Nb target member or an Nb ₂ O ₅ target member can be used as the first target member 21A, and a Si target member or a SiO ₂ target member can be used as the second target member 21B. When the first target member 21A is an Nb target member and when the second target member 21B is a Si target member, the gas supplied into the vacuum chamber may be a gas containing oxygen.

The above-mentioned second embodiment can be appropriately modified and implemented as follows.
-The second embodiment can be implemented in combination with the configuration in the modification of the first embodiment described above. That is, it may have a shape in which the first end surface 21Ae and the second end surface 21Be do not overlap when viewed from the thickness direction of the target 21.

-Using the sputtering chamber 60 of the second embodiment, both the thin film TF described in the first embodiment, that is, the element constituting the first target member 21A and the element constituting the second target member 21B are used. It is also possible to form a thin film made of a containing alloy.

-The sputtering chamber 12 of the first embodiment can be used to form the thin film TF described in the second embodiment, that is, a multilayer film in which the first layer TFa and the second layer TFb are alternately laminated. ..

10 ... Spatter device, 10C ... Control unit, 11 ... Carry-in / out chamber, 12, 60 ... Spatter chamber, 13 ... Gate valve, 14 ... Exhaust unit, 15 ... Transport unit, 16 ... Shield, 16a ... Through hole, 20 ... Cathode , 21 ... target, 21A ... first target member, 21Ae ... first end face, 21B ... second target member, 21Be ... second end face, 21F ... front surface, 21R ... back surface, 22 ... backing plate, 23 ... floating part, 30 ... Magnetic circuit, 31 ... 1st magnet, 32 ... 2nd magnet, 33 ... York, 41 ... Vacuum tank, 51 ... Cathode swinging part, 52 ... Power supply, 53 ... Magnetic circuit swinging part, 54 ... Gas supply part, 61 ... rotating drum, 61S ... outer peripheral surface, 61Ss ... support surface, Ae1 ... first protrusion, Be1 ... second protrusion, C ... carrier, S ... film formation target, Ss ... film formation surface, TF ... thin film, TFa ... 1st layer, TFb ... 2nd layer.

Claims (5)

A swinging part that swings the target connected to the power supply along the first direction,
An anode located on the front side of the target and having a through hole facing the target,
While transporting the film-forming target in the first direction on the front side of the target, a transporting portion for facing the target and the film-forming target through the through hole.
A magnetic circuit that is located behind the target, has a fixed position in the first direction with respect to the anode, and has a position in the first direction that overlaps with the position of the through hole in the first direction.
A swing unit and a control unit that controls the drive of the transport unit are provided .
The target includes a first target member and a second target member having a composition different from that of the first target member, and the first target member and the second target member are arranged in the first direction. And, both have a state of facing the film forming target through the through hole, and have a state of facing the film forming target.
While the voltage is being applied to the target by the power source, the control unit first passes to the swinging unit while the film forming target first passes through a region facing the target. One of the target member and the second target member is maintained in a state of facing the magnetic circuit.
Spattering equipment. A swinging part that swings the target connected to the power supply along the first direction,
An anode located on the front side of the target and having a through hole facing the target,
While transporting the film-forming target in the first direction on the front side of the target, a transporting portion for facing the target and the film-forming target through the through hole.
A magnetic circuit that is located behind the target, has a fixed position in the first direction with respect to the anode, and has a position in the first direction that overlaps with the position of the through hole in the first direction.
A swing unit and a control unit that controls the drive of the transport unit are provided .
The target includes a first target member and a second target member having a composition different from that of the first target member, and the first target member and the second target member are arranged in the first direction. And, both have a state of facing the film forming target through the through hole, and have a state of facing the film forming target.
While the voltage is being applied to the target by the power source, the control unit has the first unit on the swinging unit while the film forming target finally passes through the region facing the target. One of the target member and the second target member is maintained in a state of facing the magnetic circuit.
Spattering equipment. A swinging part that swings the target connected to the power supply along the first direction,
An anode located on the front side of the target and having a through hole facing the target,
While transporting the film-forming target in the first direction on the front side of the target, a transporting portion for facing the target and the film-forming target through the through hole.
A magnetic circuit that is located behind the target, has a fixed position in the first direction with respect to the anode, and has a position in the first direction that overlaps with the position of the through hole in the first direction.
A control unit that controls the drive of the swing unit is provided .
The target includes a first target member and a second target member having a composition different from that of the first target member, and the first target member and the second target member are arranged in the first direction. And, both have a state of facing the film forming target through the through hole, and have a state of facing the film forming target.
The time in which the first target member is maintained in a state facing the magnetic circuit is the first time, and the time in which the second target member is maintained in a state facing the magnetic circuit is the second time.
The control unit swings the target on the swing unit so that the first time and the second time are different from each other while the voltage is applied to the target by the power supply.
Spattering equipment. A swinging part that swings the target connected to the power supply along the first direction,
An anode located on the front side of the target and having a through hole facing the target,
While transporting the film-forming target in the first direction on the front side of the target, a transporting portion for facing the target and the film-forming target through the through hole.
A magnetic circuit that is located behind the target, has a fixed position in the first direction with respect to the anode, and has a position in the first direction that overlaps with the position of the through hole in the first direction.
A control unit that controls the drive of the swing unit is provided .
The target includes a first target member and a second target member having a composition different from that of the first target member, and the first target member and the second target member are arranged in the first direction. And, both have a state of facing the film forming target through the through hole, and have a state of facing the film forming target.
The time in which the first target member is maintained in a state facing the magnetic circuit is the first time, and the time in which the second target member is maintained in a state facing the magnetic circuit is the second time.
The control unit said that at least one of the first time and the second time changes between a plurality of lengths from the start to the end of applying a voltage to the target by the power supply. Swing the target to the swing part
Spattering equipment. In a plan view facing the plane on which the target spreads, the end face adjacent to the second target member in the first direction among the first target members is the first end face.
Among the second target members, the end face adjacent to the first target member in the first direction is the second end face.
The sputtering apparatus according to any one of claims 1 to 4 , wherein the first end surface and the second end surface overlap each other when viewed from the thickness direction of the target.

Images