JP2010174361A - Film deposition apparatus - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a film deposition apparatus capable of improving coverage performance by means of thin film and suppressing defective film deposition. <P>SOLUTION: The film deposition apparatus comprises: a vacuum container 2 for housing a substrate W to be treated; a holder 3 for loading the substrate W to be treated thereon in the vacuum container 2 and conveying the substrate W to be treated in a prescribed conveyance direction; hearths 4A, 4B which are disposed in the vacuum container 2 opposite to the conveyed substrate W to be treated; plasma guns 6, 7 for irradiating the hearths with plasma beams; and a distortion means 15A which faces the hearths and is disposed on the side opposite to the hearths via the substrate W to be treated. Therein, the distortion means 15A comprises an electrode and a power source device which is connected to the electrode and applies a voltage, wherein a potential which generates an electric charge inverse to the electric charge of film material scattered from the hearths is applied onto the electrode. <P>COPYRIGHT: (C)2010,JPO&INPIT

Description

  The present invention relates to a film forming apparatus.

  With the diversification of information equipment, the need for flat display devices that consume less power and are lighter is increasing. As one of such flat display devices, an organic electroluminescence device (hereinafter referred to as “organic EL device”) having an organic light emitting layer is known.

  The organic EL device includes a plurality of organic light emitting elements (organic EL elements) having a structure in which an organic light emitting layer (light emitting layer) and a functional layer such as an electron injection layer are sandwiched between an anode and a cathode. Among these, the cathode and the electron injection layer are formed of a material having a characteristic of easily emitting electrons, and thus easily react with moisture present in the atmosphere and deteriorate. When these deteriorate, a non-light-emitting region called a dark spot is formed. Therefore, in the organic EL device, a sealing structure that blocks moisture in the atmosphere from the organic light emitting element is important.

  In recent years, a thin film sealing technique for blocking the organic light emitting element from the external atmosphere using a thin inorganic sealing film having a thickness of several μm has been proposed. When such a sealing technique is used, a complete solid structure without a hollow structure for enclosing a gas or a liquid inside can be realized. Organic EL devices with a solid structure can be significantly reduced in thickness and weight, and can be expected to be organic EL devices with higher functionality and quality. (See Patent Document 1).

JP 2007-42367 A

  For example, an ion plating apparatus as shown in FIG. 10 is used to form the inorganic sealing film.

  The ion plating apparatus 1000 includes a vacuum vessel (film formation chamber) 1001, a hearth 1002 disposed in the vacuum vessel 1001, a plasma gun 1003 for irradiating the hearth 1002 with a plasma beam PB, and the vacuum vessel. A transport mechanism 1004 that transports the substrate W to be processed is provided in 1001 and facing the hearth 1002. A film forming material rod 1006 is inserted into the through hole 1005 of the hearth 1002, and a supply device 1007 for gradually pushing up the film forming material rod 1006 is provided below the hearth 1002.

  In this ion plating apparatus 1000, a plasma beam PB is irradiated from a plasma gun 1003 into a vacuum vessel 1001. This plasma beam PB is reliably guided to the hearth 1002 by controlling the positive potential of the hearth 1002 to an appropriate value, and heats the upper end portion of the film forming material rod 1006 in the hearth 1002. In this film-forming material rod 1006, the film-forming material evaporates by heating the upper end portion thereof, the evaporated film-forming material is ionized in the plasma beam PB, and the ionized film-forming material particles are processed. A film is deposited on the surface of the substrate W.

  On the surface of the organic EL device that forms the inorganic sealing film described above, there are many steps and irregularities caused by partition walls that divide the light emitting region for each pixel, drive elements, or foreign substances attached to the surface. However, when an inorganic sealing film is formed on such a surface using the above apparatus, film forming material particles are formed on the side wall portion of the step portion not facing the hearth 1002 or on the portion that is behind the foreign matter or step. It is difficult to adhere and tends to cause film formation failure.

  In such poorly formed film portions, sealing is likely to be insufficient, and moisture is likely to enter, so that dark spots that are non-light emitting regions are likely to occur. Furthermore, since the dark spot grows due to the infiltration of moisture and spreads the non-light emitting portion around, the product life is remarkably shortened.

  In addition, for example, there are many devices having a thin film other than an organic EL device such as an interlayer insulating film in a semiconductor substrate. However, if there is an insufficiently formed portion in the thin film to be formed, the insulation is broken and an error occurs. This will lead to a decrease in the reliability of the equipment, such as operation.

  The present invention has been made in view of such circumstances, and an object of the present invention is to provide a film forming apparatus that improves the coverage by a thin film and suppresses film formation defects.

  In order to solve the above-described problems, a film forming apparatus of the present invention includes a vacuum container that accommodates a substrate to be processed, a material source that is provided in the vacuum container so as to face the substrate to be processed, and a plasma that is applied to the material source. A plasma gun for irradiating a beam; and a distortion means facing the material source and provided on the opposite side of the material source across the substrate to be processed, the distortion means including an electrode and the electrode And a power supply device that applies a voltage to the electrode, and the electrode is applied with a potential that generates a charge opposite to that of the vapor deposition particles flying from the material source.

  According to this configuration, the flight path of the vapor deposition particles is distorted by the electrostatic force generated by the charge of the vapor deposition particles flying from the material source and the charge opposite to the charge of the vapor deposition particles possessed by the electrode of the distortion means. Vapor deposition particles can be attracted to the overlapping area. For this reason, the vapor deposition particles flying on the side wall of the stepped portion existing on the surface of the substrate to be processed, the foreign matter or the portion behind the step, etc. are likely to adhere, and film formation can be performed without film formation defects. A possible film forming apparatus can be obtained.

In the present invention, it is desirable that the substrate to be processed be placed in the vacuum vessel and have a transport mechanism for transporting in a predetermined transport direction.
According to this configuration, the film formation can be performed while scanning the region where the flight path of the vapor deposition particles is distorted with respect to the surface of the substrate to be processed. It becomes.

In the present invention, it is desirable that the electrode extends in a band shape in plan view with a direction intersecting the transport direction as a longitudinal direction.
According to this configuration, since the vapor deposition particles are attracted to the electrode extending in a belt shape, a region where the flight path of the vapor deposition particles is distorted is distributed in a belt shape. Since the substrate to be processed is transported across such a region, film formation scanning on the surface of the substrate to be processed is effectively performed, and film formation without defects can be performed on the entire surface of the substrate to be processed.

In the present invention, it is desirable that a width of the electrode in a direction orthogonal to the transport direction is longer than a width of the substrate to be processed in a direction orthogonal to the transport direction.
According to this configuration, since the distortion of the flight path of the vapor deposition particles is performed over the entire surface of the substrate to be processed, it is possible to perform film formation uniformly over the entire surface of the substrate to be processed.

In the present invention, the distortion means is disposed adjacent to the first electrode to which a potential that generates a charge opposite to the charge of the vapor deposition particles is applied, and the charge of the vapor deposition particles. It is desirable to have a plurality of the electrodes including a second electrode to which a potential that generates the same charge or a ground potential is applied.
According to this configuration, it is possible to provide a film forming apparatus capable of effectively guiding the vapor deposition particles flying in a manner overlapping the second electrode to the first electrode. In particular, when the same charge as the charge of the vapor deposition particles is generated in the second electrode, the repulsion of the vapor deposition particles by the second electrode and the pulling of the vapor deposition particles by the first electrode are performed at the same time, which is effective.

In the present invention, it is preferable that in the distortion means, a plurality of the first electrodes and the second electrodes are alternately arranged in stripes.
According to this configuration, the substrate to be processed passes through the region where the flight path of the vapor deposition particles is distorted several times by one transport, so that good film formation with no unevenness is performed as in the case of film formation multiple times. It can be set as the film-forming apparatus which can implement | achieve.

In the present invention, it is desirable that the plurality of adjacent electrodes sandwich an insulating member made of an insulating material.
According to this configuration, unnecessary discharge that can occur between adjacent electrodes can be suppressed, and stable film formation can be realized.

In the present invention, it is desirable that the distortion means is provided to be rotatable relative to the substrate to be processed around a rotation axis set in a normal direction of the substrate to be processed.
According to this configuration, it is possible to provide a deposition apparatus that can adhere vapor deposition particles whose flight path is distorted in all directions without unevenness to the surface to be processed of the substrate to be processed, and realize good film formation. Can do.

It is sectional drawing which shows the structure of the organic electroluminescent apparatus with which this invention is applied. It is the schematic which shows the structure of the film-forming apparatus which concerns on embodiment of this invention. It is the schematic which shows the structure of the film-forming apparatus which concerns on embodiment of this invention. It is explanatory drawing explaining operation | movement of the film-forming apparatus of this invention. It is explanatory drawing explaining operation | movement of the film-forming apparatus of this invention. It is explanatory drawing explaining operation | movement of the film-forming apparatus of this invention. It is the schematic which shows the modification of the film-forming apparatus which concerns on embodiment of this invention. It is the schematic which shows the modification of the film-forming apparatus which concerns on embodiment of this invention. It is the schematic which shows the modification of the film-forming apparatus which concerns on embodiment of this invention. It is sectional drawing which shows an example of the conventional film-forming apparatus.

  Hereinafter, a film forming apparatus according to an embodiment of the present invention will be described with reference to FIGS. In all the drawings below, the film thicknesses and dimensional ratios of the constituent elements are appropriately changed in order to make the drawings easy to see.

  Here, the organic EL device to which the present invention is applied is first described with reference to FIG. 1, and then the film forming device 1 is described with reference to FIGS.

  FIG. 1 is a cross-sectional view showing the configuration of the organic EL device 100. The organic EL device 100 includes an element substrate 101 in which an element layer 101b is provided on a base material 101a, a pixel electrode 102 provided on the element layer 101b, an organic light emitting layer 103 provided on the pixel electrode 102, an organic And a common electrode 104 provided to cover the light emitting layer 103.

  The organic light emitting layer 103 is divided by a plurality of partition walls 105, and the divided organic light emitting layer 103 forms a pixel electrode 102, a common electrode 104, and a plurality of organic EL elements 110 sandwiching the organic light emitting layer 103. In addition, a protective substrate 120 that is disposed opposite to the element substrate 101 and protects the organic EL element 110 is provided. The element substrate 101 and the protective substrate 120 are bonded to each other with a seal layer 130 and an adhesive layer 135 interposed therebetween.

  In addition, the plurality of organic EL elements 110 are covered with a protective layer including an electrode protective layer 107, an organic buffer layer 108, and a gas barrier layer 109 that are sequentially stacked.

Among these protective layers, the organic buffer layer 108 is provided to fill and flatten the uneven portions of the electrode protective layer 107 formed in an uneven shape reflecting the shape of the partition wall 105, and is made of a resin material such as an epoxy resin. It is formed using. Further, the electrode protective layer 107 and the gas barrier layer 109 are formed using an inorganic material as a forming material in consideration of transparency, adhesion, water resistance, insulation, and gas barrier properties, and moisture to the organic EL element 110 is formed. Has a function to prevent intrusion. In this embodiment, it is formed using a silicon compound such as silicon oxide (SiO ₂ ), silicon oxynitride (SiON), or silicon nitride (SiN).

  The electrode protective layer 107 is formed by using a gas phase reaction, but is formed on the partition wall 105. Therefore, the electrode protective layer 107 is formed on the partition wall 105. In the portion overlapping the side wall portion, it becomes a shadow of the step, and film formation failure is likely to occur. In addition, when film formation is performed in a state where foreign matters are attached to the formation surface of the electrode protection layer 107 and the gas barrier layer 109, pinholes are easily generated, and reliability is lowered.

  The film forming apparatus of the present invention is preferably used when such an electrode protective layer 107 and a gas barrier layer 109 are formed on the element substrate 101 (substrate W to be processed) on which the partition wall 105 and the organic EL element 110 are formed. It is done.

FIG. 2 is a cross-sectional view showing the film forming apparatus 1 of the present embodiment. As shown in the figure, a film forming apparatus 1 includes a vacuum container 2 that accommodates a substrate to be processed W, and a holder (conveying mechanism) that is provided above the vacuum container 2 and transports the substrate W to be processed into the vacuum container 2. 3), a hearth (material source) 4A, 4B disposed at the bottom of the vacuum vessel 2 so as to face the processing surface Ws of the substrate W to be processed, and a plasma gun for making the high-density plasma HP incident on the hearth 4A 6, a plasma gun 7 for injecting high-density plasma HP into the hearth 4B, a pipe 10 for introducing nitrogen gas (N ₂ ) or the like into the vacuum vessel 2, and a holder 3 provided on the upper portion of the vacuum vessel 2 And a distortion means 15A facing the hearths 4A and 4B.

  Each of the hearths 4A and 4B is filled with a film forming material such as silicon oxide (SiO), and a hearth coil 8 is provided around each of the hearths 4A and 4B for controlling the direction of the high-density plasma HP incident thereon. It has been. A steering coil 9 for controlling the direction of the high-density plasma HP is also provided on the exit side of the high-density plasma HP of the plasma gun 6.

  The high-density plasma HP emitted from the plasma gun 6 is reliably guided to the hearth 4A by controlling the discharge voltage of the hearth 4A to an appropriate value by a control device (not shown), and film formation in the hearth 4A is performed. The material is heated and evaporated. Similarly, the high-density plasma HP emitted from the plasma gun 7 is also guided to the hearth 4B, and the film forming material in the hearth 4B is heated and evaporated. The evaporated film forming material is ionized in the high density plasma HP and reacts with an atmospheric gas such as nitrogen gas, and the reaction product adheres to the surface of the substrate W to be processed.

  The distortion means 15 </ b> A has a function of distorting the flight path of the film forming material or reaction product (hereinafter collectively referred to as film material) flying linearly from the hearts 4 </ b> A and 4 </ b> B in the vicinity of the holder 3.

  FIG. 3 is a schematic diagram showing an outline of the distortion means 15A. As shown in the drawing, the distorting means 15A is a plate body that is substantially rectangular in plan view and extends in a band shape, and a plurality of electrodes (first electrodes) 15a and electrodes (second electrodes) 15b extending in one direction. And a plurality of insulating members 15c that are substantially rectangular in plan view and extend in one direction. The electrodes 15a and 15b are alternately arranged in a striped pattern along a predetermined arrangement axis so that the long sides are adjacent to each other. Between the adjacent electrodes 15a and 15b, the long sides and their own The insulating member 15c is arranged so that the long side is adjacent.

  A power supply device 15d is connected to the electrodes 15a and 15b, and different potentials are applied to the electrodes 15a and 15b. In the figure, a positive (+) potential is applied to the electrode 15a, and a negative (−) potential is applied to the electrode 15b.

If electrodes of opposite potentials are arranged at close positions, there is a risk of discharge between the electrodes. For example, if the pressure in the vacuum vessel 2 shown in FIG. 2 is 1E ⁻³ Pa during film formation, When a potential of ± 2 keV is applied to the electrodes, the discharge can be suppressed by setting the distance between the electrodes to 1 cm or more.

The insulating member 15c has a function of suppressing the above discharge. As a material for forming the insulating member 15c, an inorganic compound such as boron nitride (BN), aluminum oxide (Al ₂ O ₃ ), aluminum nitride (AlN), or a ceramic material can be preferably used.

  The length L1 of the long sides of the electrodes 15a and 15b is the length of the electrodes 15a and 15b on the substrate W to be processed in order to spread the influence of the distortion means 15A described later over the entire surface of the substrate W to be processed. It is desirable that the length is longer than the length L2 in the same direction as the side. The lengths (widths) of the short sides of the electrodes 15a and 15b and the insulating member 15c can be appropriately set according to the film formation rate and the transport speed of the substrate W to be processed.

  The substrate W to be processed held by a holder (not shown) moves in a direction intersecting with the extending direction of the electrodes 15a and 15b, and the film material M flying from the direction opposite to the distortion means 15A with respect to the substrate W to be processed. Is formed on the surface to be processed.

  In the vicinity of the distorting means 15A, the flying film material M exhibits the following behavior. FIG. 4 is a schematic cross-sectional view showing the state in the vicinity of the distortion means 15A.

  As shown in the figure, the film material M flying toward the distortion means 15A in the film forming apparatus has a charge due to the charge of the high-density plasma used for heating. Here, assuming that SiO is used as the film forming material, the film material M is illustrated as being negatively charged.

  On the other hand, in the distorting means 15A, application is made so that different positive and negative potentials are generated in the adjacent electrodes 15a and 15b, so that an electric field EF is generated between the electrodes. The film material M flying toward the distorting means 15A bends the flight path due to the influence of the electric field EF and repels the repulsive force from the electrode 15b in which the same charge as the charge of the film material M is generated. The film material M is attracted by receiving an attractive force from the electrode 15a in which a charge opposite to the charged charge of the film material M is generated. As a result, the film material M adheres to the substrate to be processed from an oblique direction to form a film.

  Here, although the widths of the electrodes 15a and 15b are shown as being equal in the figure, the widths may be different from each other. FIG. 5 is a schematic view showing the behavior of the film material M when the widths of the electrodes 15a and 15b are changed. Here, the membrane material M is illustrated by showing only the flight path.

  As shown in FIG. 5A, when the width of the electrode 15a is made shorter than the width of the electrode 15b, the film material M flying in a plane overlaps with the electrode 15b that generates repulsive force on the film material M increases. Many film materials M are subjected to repulsive force. As a result, the number of film materials M whose flight path is distorted is larger than when the widths of the electrodes 15a and 15b are equal.

  On the other hand, as shown in FIG. 5B, when the width of the electrode 15a is longer than the width of the electrode 15b, the film material M flying in a plane overlaps with the electrode 15a that generates an attractive force with respect to the film material M. As a result, many film materials M receive an attractive force, and as a result, more film materials M travel in the flight path than when the widths of the electrodes 15a and 15b are equal.

By utilizing the behavior of the film material M with respect to the width of the electrodes, an electrode having a suitable width is set according to the amount of charge charged by the film material M, the flying speed of the film material M, and the flying density of the film material M, and then flying. The direction of the film material M can be distorted and good film formation can be performed.
The film forming apparatus 1 of the present embodiment has the above configuration.

  Next, the function of the film forming apparatus 1 will be described with an example. FIG. 6 is a process diagram showing how a film is formed on the substrate W to be processed. Here, in the manufacturing process of the organic EL device 100 shown in FIG. 1, a state in which the electrode protective layer 107 is formed on the element substrate 101 (substrate W to be processed) on which the partition wall 105 and the organic EL element 110 are formed is shown. .

  As shown in FIG. 6A, the substrate to be processed W held by a holder (not shown) is on the side on which the film material M flies, with the side on which the partition walls 105 and the organic EL elements 110 are formed as the surface to be processed Ws. And so as to overlap the distortion means 15A in a plane. The flying film material M reaches the surface to be processed Ws while the flight path is distorted due to the influence of the electric field generated from the distortion means 15A. Therefore, the film material M is more likely to adhere to the portion overlapping the side wall portion of the partition wall 105 indicated by the symbol AR2, rather than the film material M flying straight ahead, and as a result, film formation defects are less likely to occur.

  The separation distance between the substrate W to be processed and the distorting means 15A can be arbitrarily determined depending on the voltage applied to the distorting means 15A, the film forming rate of the film material M, etc., but the above functions are exhibited well. For this purpose, it is necessary to arrange the substrate to be processed W at a position closer to the distortion means 15A than a position at which the flight path of the film material M starts to bend.

Further, as shown in FIG. 6B, since the substrate to be processed W is formed while moving relative to the distortion means 15A, the film material M is formed over the entire step portion of the surface to be processed Ws. Good adhesion and film formation. In the vicinity of the substrate to be processed W, the film material M is attracted in a band shape at a position overlapping with the plurality of electrodes 15a, and a portion where the flight path of the film material M is distorted in such a band shape is processed. By traversing W, film formation without unevenness can be performed as in the case where film formation is performed by scanning the entire surface of the substrate W to be processed a plurality of times using one electrode. Furthermore, a good electrode protection layer 107 free from film formation defects is formed by performing film formation a plurality of times while reciprocating the substrate to be processed W as necessary.
As described above, film formation using the film formation apparatus of the present embodiment is performed.

  According to the film forming apparatus 1 having the above-described configuration, the flight path of the film material M is distorted by the electrostatic force generated by the charge of the film material M flying and the charge of the electrode 15a of the distortion means 15A. be able to. Therefore, the film material M that is distorted and flying easily adheres to the side wall portion of the partition wall existing on the processing surface Ws of the processing target substrate W, and the film forming apparatus 1 that can perform film formation without film formation defects. It can be.

  In the present embodiment, the distortion means 15A includes an electrode 15a having a charge opposite to the charge of the film material M, an electrode 15b disposed adjacent to the electrode 15a and having the same charge as the charge of the film material M, To have. Therefore, repulsion of the film material M by the electrode 15b and drawing of the film material M by the electrode 15a are performed at the same time, and the film material M that overlaps and flies over the electrode 15b can be effectively guided to the electrode 15a. The device 1 can be obtained.

  In the present embodiment, the electrodes 15a and the electrodes 15b are alternately arranged in a stripe pattern. Therefore, the film material M is drawn at a plurality of locations with respect to the substrate to be processed W that is transported overlapping the distorting means 15A, and there is no unevenness as in the case where a plurality of layers are deposited by a single transport. It can be set as the film-forming apparatus which can implement | achieve favorable film-forming.

  In the present embodiment, a potential opposite to that of the electrode 15a is applied to the electrode 15b. However, the potential of the electrode 15b may be a ground potential.

  In the present embodiment, the electrodes 15a and 15b are substantially rectangular plates in plan view, but may be rod-like shapes such as prisms and cylinders.

  In the present embodiment, the distortion means 15A has a plurality of electrodes 15a and 15b, but the number of electrodes is not limited to this. FIG. 7 is a schematic diagram showing a modification of the distortion means. In FIG. 7, the electrode 15a is applied to a potential that generates a charge opposite to the charged charge of the flying film material M.

  For example, as shown in FIG. 7A, a distortion means 15B in which one electrode 15b is sandwiched between two electrodes 15a may be used. In this case, the film material M is attracted to the two electrodes 15a by the electrode 15b sandwiched therebetween, but the structure is such that the applied charge is reversed and one electrode 15a is sandwiched by the two electrodes 15b. It does not matter. Further, as shown in FIG. 7B, the distortion means 15C can be formed by using only one electrode 15a.

  In the present embodiment, one distortion means having an electrode extending in a direction intersecting the transport direction of the substrate W to be processed is provided. However, a film forming apparatus having a plurality of distortion means may be used. good.

  For example, as shown in FIG. 8, when the extending directions of the electrodes 15a and 15b of the two distortion means 15D and 15E cross each other, the film material M adheres at every film formation performed overlapping the distortion means. Since the orientation is different, the film material M can be attached to the substrate W to be processed from a plurality of orientations. Therefore, it is possible to eliminate unevenness in the adhesion direction of the film material M and to prevent poor film formation.

  In the present embodiment, the substrate W to be processed and the distortion means 15A perform relative linear motion, but the substrate W to be processed and the distortion means 15A that overlap in a plane are relatively rotated. It may be configured to exercise.

  For example, as shown in FIG. 9A, the distortion means 15F can rotate around a rotation axis R1 set parallel to the normal line of the distortion means 15F, and the distortion means 15F is rotated and the same as in this embodiment. Next, the substrate W to be processed facing the distortion means 15F is moved. When film formation is performed by a film forming apparatus that performs such an operation, the film material M is deposited from various directions in all directions with respect to the surface to be processed. Therefore, for example, even in the case where the uneven shape is provided in a lattice shape, there is no portion that becomes a shadow of the film formation, and the film formation can be suitably performed.

  When a plurality of distortion means are used as described above, each distortion means may be rotatable.

  Alternatively, as shown in FIG. 9B, the substrate to be processed W can rotate around the rotation axis R2 set parallel to the normal line of the substrate to be processed W, and the substrate W is distorted while being rotated. The target substrate W facing the means 15A may be moved.

  The rotational movement of the distorting means 15F or the substrate W to be processed shown in FIG. 9 may be a rotational movement that continues to rotate in one direction, and is rotated by a certain angle in one direction and then by a certain angle in the opposite direction. May be repeated. With this configuration, if the angle can be changed by 90 degrees, for example, the film material M can be deposited from various directions in all directions with respect to the surface to be processed.

  Further, for example, when film formation is performed by reciprocating the substrate to be processed W and performing a plurality of scans, the relative angle between the substrate to be processed and the distorting means is changed at the time of switching between reciprocations, so The film may be formed in a state where the relative angle is fixed.

  The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but it goes without saying that the present invention is not limited to such examples. Various shapes, combinations, and the like of the constituent members shown in the above-described examples are examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.

  In the present embodiment, since the film material M is negatively charged, it is described that the film material M is attracted to the positively charged electrode 15a. However, the film material heated by the plasma is positively charged. If it is, it will be attracted to the negatively charged electrode. In that case, by setting the potentials of the electrodes 15a and 15b in reverse, it is possible to obtain a film forming apparatus that can obtain the same effect.

DESCRIPTION OF SYMBOLS 1 ... Film-forming apparatus, 2 ... Vacuum container, 3 ... Holder (conveyance mechanism), 4A, 4B ... Hearth (material source), 6, 7 ... Plasma gun, 15A-15F ... Distortion means, 15a ... Electrode (1st Electrode), 15b ... electrode (second electrode), 15c ... insulating member, 15d ... power supply device, M ... film material (deposited particles), W ... substrate to be treated,

Claims (9)

A vacuum container for storing the substrate to be processed;
A material source provided in the vacuum container facing the substrate to be processed;
A plasma gun for irradiating the material source with a plasma beam;
A distortion means facing the material source and provided on the opposite side of the material source across the substrate to be processed,
The distortion means includes an electrode and a power supply device connected to the electrode and applying a voltage,
The film forming apparatus, wherein the electrode is applied with a potential that generates a charge opposite to a charge of vapor deposition particles flying from the material source.   2. The film forming apparatus according to claim 1, further comprising a transport mechanism that places the substrate to be processed in the vacuum container and transports the substrate in a predetermined transport direction.   The film forming apparatus according to claim 2, wherein the electrode extends in a band shape in a plan view with a direction intersecting the transport direction as a longitudinal direction.   4. The film forming apparatus according to claim 2, wherein a width of the electrode in a direction orthogonal to the transport direction is longer than a width of the substrate to be processed in a direction orthogonal to the transport direction. The distortion means includes a first electrode to which a potential that generates a charge opposite to the charge of the vapor deposition particles is applied;
A plurality of the electrodes including a second electrode disposed adjacent to the first electrode and applied with a potential that generates the same charge as the charge of the vapor deposition particles or a ground potential. Item 5. The film forming apparatus according to any one of Items 1 to 4.   6. The film forming apparatus according to claim 5, wherein each of the distortion means includes a plurality of the first electrodes and the second electrodes alternately arranged in a stripe pattern.   The film forming apparatus according to claim 5, wherein the plurality of adjacent electrodes sandwich an insulating member made of an insulating material as a forming material. A plurality of distortion means arranged along the conveying direction;
8. The method according to claim 5, wherein the first electrode and the second electrode included in each of the distortion means are set in a direction in which extending directions intersect each other. Film forming equipment.   9. The distortion device according to claim 1, wherein the distortion means is provided to be rotatable relative to the substrate to be processed around a rotation axis set in a normal direction of the substrate to be processed. The film-forming apparatus of any one of Claims

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