JP7037261B2 - 表示パネルおよび表示装置 - Google Patents
表示パネルおよび表示装置 Download PDFInfo
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- JP7037261B2 JP7037261B2 JP2020529287A JP2020529287A JP7037261B2 JP 7037261 B2 JP7037261 B2 JP 7037261B2 JP 2020529287 A JP2020529287 A JP 2020529287A JP 2020529287 A JP2020529287 A JP 2020529287A JP 7037261 B2 JP7037261 B2 JP 7037261B2
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- 239000010410 layer Substances 0.000 claims description 75
- 239000011241 protective layer Substances 0.000 claims description 66
- 238000000605 extraction Methods 0.000 claims description 36
- 239000000758 substrate Substances 0.000 claims description 19
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 11
- 229920001621 AMOLED Polymers 0.000 claims description 10
- 239000000463 material Substances 0.000 claims description 10
- PQXKHYXIUOZZFA-UHFFFAOYSA-M lithium fluoride Chemical group [Li+].[F-] PQXKHYXIUOZZFA-UHFFFAOYSA-M 0.000 claims description 6
- SJCKRGFTWFGHGZ-UHFFFAOYSA-N magnesium silver Chemical compound [Mg].[Ag] SJCKRGFTWFGHGZ-UHFFFAOYSA-N 0.000 claims description 3
- 239000000203 mixture Substances 0.000 claims description 3
- 230000005540 biological transmission Effects 0.000 claims 1
- 150000002500 ions Chemical class 0.000 description 14
- 238000010586 diagram Methods 0.000 description 8
- 238000002347 injection Methods 0.000 description 8
- 239000007924 injection Substances 0.000 description 8
- 238000000034 method Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 4
- 238000004549 pulsed laser deposition Methods 0.000 description 4
- 238000000231 atomic layer deposition Methods 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 238000002834 transmittance Methods 0.000 description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 3
- 230000004888 barrier function Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 229910052731 fluorine Inorganic materials 0.000 description 2
- 239000011737 fluorine Substances 0.000 description 2
- -1 fluorine ions Chemical class 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 239000012044 organic layer Substances 0.000 description 2
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- LKJPSUCKSLORMF-UHFFFAOYSA-N Monolinuron Chemical compound CON(C)C(=O)NC1=CC=C(Cl)C=C1 LKJPSUCKSLORMF-UHFFFAOYSA-N 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 238000012536 packaging technology Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
- H10K50/858—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/875—Arrangements for extracting light from the devices
- H10K59/879—Arrangements for extracting light from the devices comprising refractive means, e.g. lenses
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/87—Passivation; Containers; Encapsulations
- H10K59/873—Encapsulations
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/81—Anodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/84—Passivation; Containers; Encapsulations
- H10K50/844—Encapsulations
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/12—Active-matrix OLED [AMOLED] displays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
-
- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G2330/00—Aspects of power supply; Aspects of display protection and defect management
- G09G2330/04—Display protection
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/562—Protection against mechanical damage
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/564—Details not otherwise provided for, e.g. protection against moisture
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
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- H—ELECTRICITY
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K2102/00—Constructional details relating to the organic devices covered by this subclass
- H10K2102/10—Transparent electrodes, e.g. using graphene
- H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
- H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/805—Electrodes
- H10K50/82—Cathodes
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/80—Constructional details
- H10K50/85—Arrangements for extracting light from the devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/80—Constructional details
- H10K59/805—Electrodes
- H10K59/8052—Cathodes
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Description
順次積層設置された基板、有機発光構造、第1の電極、光抽出層、保護層、およびフィルムパッケージ層を備え、
前記フィルムパッケージ層は、前記有機発光構造、前記第1の電極、前記光抽出層および前記保護層を被覆し、前記光抽出層は、前記保護層と前記第1の電極との間に位置し、前記保護層と前記第1の電極とを完全に隔離する表示パネルを提供する。
または、前記第3の距離は前記第2の距離に等しく、
または、前記第1の距離は、前記第2の距離、前記第3の距離に等しく、
または、前記第3の距離は前記第1の距離よりも小さく、且つ前記第1の距離は前記第2の距離よりも小さい。
前記第1の距離、前記第2の距離および前記第3の距離のうちの最小の距離は100μm以上500μm以下であることと、
前記第1の距離、前記第2の距離および前記第3の距離のうちの最大の距離は1mm以下であることと、
の少なくとも1つを満たす。
順次積層設置された基板、有機発光構造、第1の電極、光抽出層、保護層、およびフィルムパッケージ層を備え、
前記フィルムパッケージ層は、前記有機発光構造、前記第1の電極、前記光抽出層および前記保護層を被覆し、前記光抽出層は、前記保護層と前記第1の電極との間に位置し、前記保護層と前記第1の電極とを完全に隔離する表示パネルを提供する。
順次積層設置された基板10、有機発光構造20、第1の電極21、光抽出層30、保護層40およびフィルムパッケージ層50を備え、
フィルムパッケージ層50は、有機発光構造20、第1の電極21、光抽出層30および保護層40を被覆する。
Claims (6)
- 順次積層設置された基板、有機発光構造、第1の電極、光抽出層、保護層、およびフィルムパッケージ層を備え、前記保護層に用いられる材料はフッ化リチウムであり、
前記フィルムパッケージ層は、前記有機発光構造、前記第1の電極、前記光抽出層および前記保護層を被覆し、前記光抽出層は、前記保護層と前記第1の電極との間に位置し、
前記保護層と前記第1の電極とを完全に隔離し、
前記基板表面に平行な方向に沿い、前記光抽出層の縁から前記フィルムパッケージ層の縁までの距離は第1の距離であり、前記第1の電極の縁から前記フィルムパッケージ層の縁までの距離は第2の距離であり、前記保護層の縁から前記フィルムパッケージ層の縁までの距離は第3の距離であり、前記第1の距離は前記第2の距離よりも小さい、且つ、前記基板表面に垂直な方向に沿い、前記光抽出層の端部が前記保護層の端部と位置合わせされることにより、前記第3の距離は前記第1の距離に等しいようにする、ことを特徴とする表示パネル。 - 前記第1の距離、前記第2の距離および前記第3の距離のうちの最小の距離は100μm以上500μm以下であることと、
前記第1の距離、前記第2の距離および前記第3の距離のうちの最大の距離は1mm以下であることと、
を満たす、ことを特徴とする請求項1に記載の表示パネル。 - 前記第2の距離と前記第1の距離との差は900μm以下である、ことを特徴とする請求項1に記載の表示パネル。
- 前記第2の距離と前記第1の距離との差は200μm以下である、ことを特徴とする請求項3に記載の表示パネル。
- 前記第1の電極の光透過率は80%よりも大きく、前記第1の電極の材料は、マグネシウム-銀混合物、酸化インジウムスズ、酸化インジウム亜鉛、銀がドープされた酸化インジウムスズ又は銀がドープされた酸化インジウム亜鉛である、ことを特徴とする請求項1に記載の表示パネル。
- 前記表示パネルは、トップエミッションのアクティブマトリックス有機発光ダイオードAMOLED表示パネルであり、前記第1の電極は陰極であり、
或いは、
前記表示パネルは、ボトムエミッションのAMOLED表示パネルであり、
或いは、
前記表示パネルは、パッシブ有機発光ダイオードPMOLED表示パネルであり、前記第1の電極はストライプ状陰極であることを特徴とする請求項1~5のいずれか1項に記載の表示パネル。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201811015082.1 | 2018-08-31 | ||
CN201811015082.1A CN109148728B (zh) | 2018-08-31 | 2018-08-31 | 一种显示面板及显示装置 |
PCT/CN2019/074151 WO2020042543A1 (zh) | 2018-08-31 | 2019-01-31 | 显示面板及显示装置 |
Publications (3)
Publication Number | Publication Date |
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JP2021504913A JP2021504913A (ja) | 2021-02-15 |
JP2021504913A5 JP2021504913A5 (ja) | 2021-03-25 |
JP7037261B2 true JP7037261B2 (ja) | 2022-03-16 |
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JP2020529287A Active JP7037261B2 (ja) | 2018-08-31 | 2019-01-31 | 表示パネルおよび表示装置 |
Country Status (6)
Country | Link |
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US (1) | US11283051B2 (ja) |
JP (1) | JP7037261B2 (ja) |
KR (1) | KR102302700B1 (ja) |
CN (1) | CN109148728B (ja) |
TW (1) | TWI690078B (ja) |
WO (1) | WO2020042543A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109148728B (zh) * | 2018-08-31 | 2019-10-29 | 昆山国显光电有限公司 | 一种显示面板及显示装置 |
CN112713249B (zh) * | 2020-12-14 | 2023-04-18 | 广州国显科技有限公司 | 显示面板及其制备方法 |
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