JP7016848B2 - 太陽電池パネルの製造方法 - Google Patents
太陽電池パネルの製造方法 Download PDFInfo
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- JP7016848B2 JP7016848B2 JP2019200028A JP2019200028A JP7016848B2 JP 7016848 B2 JP7016848 B2 JP 7016848B2 JP 2019200028 A JP2019200028 A JP 2019200028A JP 2019200028 A JP2019200028 A JP 2019200028A JP 7016848 B2 JP7016848 B2 JP 7016848B2
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- 238000004519 manufacturing process Methods 0.000 title claims description 19
- 239000003566 sealing material Substances 0.000 claims description 124
- 239000000463 material Substances 0.000 claims description 111
- 238000007789 sealing Methods 0.000 claims description 73
- 239000000758 substrate Substances 0.000 claims description 47
- 238000000034 method Methods 0.000 claims description 35
- 239000011521 glass Substances 0.000 claims description 19
- 238000010030 laminating Methods 0.000 claims description 12
- 239000000126 substance Substances 0.000 description 32
- 239000004065 semiconductor Substances 0.000 description 31
- 239000010410 layer Substances 0.000 description 30
- 229910000679 solder Inorganic materials 0.000 description 23
- 239000012792 core layer Substances 0.000 description 13
- 239000002019 doping agent Substances 0.000 description 11
- 238000012986 modification Methods 0.000 description 8
- 230000004048 modification Effects 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 238000002161 passivation Methods 0.000 description 7
- 238000003475 lamination Methods 0.000 description 6
- 229920005989 resin Polymers 0.000 description 6
- 239000011347 resin Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000007774 longterm Effects 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- 238000012360 testing method Methods 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 3
- 238000005336 cracking Methods 0.000 description 3
- 239000013078 crystal Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 229920000139 polyethylene terephthalate Polymers 0.000 description 3
- 239000005020 polyethylene terephthalate Substances 0.000 description 3
- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 239000002033 PVDF binder Substances 0.000 description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 239000005038 ethylene vinyl acetate Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- 229920001200 poly(ethylene-vinyl acetate) Polymers 0.000 description 2
- -1 polyethylene terephthalate Polymers 0.000 description 2
- 229920002620 polyvinyl fluoride Polymers 0.000 description 2
- 229920002981 polyvinylidene fluoride Polymers 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910008433 SnCU Inorganic materials 0.000 description 1
- 229910007116 SnPb Inorganic materials 0.000 description 1
- 239000002313 adhesive film Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- CETPSERCERDGAM-UHFFFAOYSA-N ceric oxide Chemical compound O=[Ce]=O CETPSERCERDGAM-UHFFFAOYSA-N 0.000 description 1
- 229910000422 cerium(IV) oxide Inorganic materials 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 230000014509 gene expression Effects 0.000 description 1
- 229910021480 group 4 element Inorganic materials 0.000 description 1
- 229910021478 group 5 element Inorganic materials 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 230000003100 immobilizing effect Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 229910052698 phosphorus Inorganic materials 0.000 description 1
- 239000011574 phosphorus Substances 0.000 description 1
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920005672 polyolefin resin Polymers 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 229910052718 tin Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
- H01L31/0508—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module the interconnection means having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02002—Arrangements for conducting electric current to or from the device in operations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
- H01L31/0488—Double glass encapsulation, e.g. photovoltaic cells arranged between front and rear glass sheets
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/05—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells
- H01L31/0504—Electrical interconnection means between PV cells inside the PV module, e.g. series connection of PV cells specially adapted for series or parallel connection of solar cells in a module
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Description
Claims (5)
- 第1ガラス基板と、
第2ガラス基板と、
前記第1ガラス基板と前記第2ガラス基板との間に配置される複数の太陽電池及び前記複数の太陽電池を一方向に接続する複数の配線材から構成された太陽電池ストリングと、
前記太陽電池ストリングに接続されて外部に延長されるバスリボンを含むバスリボン部と、
前記第1ガラス基板と前記太陽電池ストリングとの間に配置された第1メインシール材と、
前記第2ガラス基板と前記太陽電池ストリングとの間に配置された第2メインシール材と、
を含む積層構造体を形成する段階と、
前記積層構造体に熱と圧力を加えてラミネートする段階と、
を含み、
前記積層構造体を形成する段階において、前記第1ガラス基板と前記第2ガラス基板との間で前記バスリボン部に対応する部分に追加シール部材をさらに位置させ、
前記バスリボン部は、前記太陽電池ストリングの一部と重畳して位置し、
前記太陽電池ストリングと前記バスリボン部との間に、これらの間を絶縁させる絶縁部材が備えられ、
前記太陽電池ストリングにおいて、前記絶縁部材と反対側の面に前記追加シール部材を位置させる、太陽電池パネルの製造方法。 - 前記第1メインシール材または前記第2メインシール材の厚さに対する前記追加シール部材の厚さの割合は、0.4倍乃至1.5倍である、請求項1に記載の太陽電池パネルの製造方法。
- 前記追加シール部材の厚さは、前記第1メインシール材または前記第2メインシール材の厚さと同じか、それより大きいか、それより小さい、請求項1に記載の太陽電池パネルの製造方法。
- 前記追加シール部材の厚さは、250~600μmである、請求項1に記載の太陽電池パネルの製造方法。
- 前記追加シール部材は、前記第1メインシール材及び前記第2メインシール材の内、少なくとも一つと比較して、前記バスリボン部に対応する積層部分の厚さを増加させる、または、前記第1メインシール材及び前記第2メインシール材の内、少なくとも一つより高い密度を有する、請求項1に記載の太陽電池パネルの製造方法。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2018-0134024 | 2018-11-03 | ||
KR1020180134024A KR20200051112A (ko) | 2018-11-03 | 2018-11-03 | 태양 전지 패널 및 이의 제조 방법 |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2020072275A JP2020072275A (ja) | 2020-05-07 |
JP7016848B2 true JP7016848B2 (ja) | 2022-02-07 |
Family
ID=68424819
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2019200028A Active JP7016848B2 (ja) | 2018-11-03 | 2019-11-01 | 太陽電池パネルの製造方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US20200144430A1 (ja) |
EP (1) | EP3648177B1 (ja) |
JP (1) | JP7016848B2 (ja) |
KR (1) | KR20200051112A (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR3117673B1 (fr) * | 2020-12-16 | 2023-04-28 | Commissariat Energie Atomique | Interconnecteur pour chaînes de cellules solaires destinées à former un module photovoltaïque |
JP7372412B1 (ja) | 2022-09-12 | 2023-10-31 | シャープ株式会社 | 太陽電池モジュールの出力線接続構造 |
US12094990B1 (en) | 2023-03-09 | 2024-09-17 | Jinko Solar (Haining) Co., Ltd. | Photovoltaic curtain wall and method for manufacturing photovoltaic curtain wall |
Citations (7)
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JP2006019440A (ja) | 2004-06-30 | 2006-01-19 | Kyocera Corp | 太陽電池モジュール |
US20090090412A1 (en) | 2005-12-22 | 2009-04-09 | Hermann Calwer | Photovoltaic device and method for encapsulating |
JP2009246208A (ja) | 2008-03-31 | 2009-10-22 | Kyocera Corp | 太陽電池モジュールおよびその製造方法 |
WO2014030225A1 (ja) | 2012-08-22 | 2014-02-27 | 三洋電機株式会社 | 太陽電池モジュール及びその製造方法 |
CN104966743A (zh) | 2015-07-21 | 2015-10-07 | 宁波华顺太阳能科技有限公司 | 一种抗pid光伏组件 |
JP2018093167A (ja) | 2016-12-02 | 2018-06-14 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びこれを含む太陽電池パネル |
JP2018107194A (ja) | 2016-12-22 | 2018-07-05 | パナソニックIpマネジメント株式会社 | 太陽電池モジュール、及び太陽電池モジュールの製造方法 |
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JP3805996B2 (ja) * | 2001-04-20 | 2006-08-09 | シャープ株式会社 | 採光型合わせガラス構造太陽電池モジュール及び採光型複層構造太陽電池モジュール |
JP2003031824A (ja) * | 2001-07-13 | 2003-01-31 | Sharp Corp | 太陽電池モジュール |
JP4076742B2 (ja) * | 2001-07-13 | 2008-04-16 | シャープ株式会社 | 太陽電池モジュール |
JP2005079170A (ja) * | 2003-08-28 | 2005-03-24 | Kyocera Corp | 太陽電池モジュールおよびその製造方法 |
JP5404987B2 (ja) * | 2005-09-13 | 2014-02-05 | 三洋電機株式会社 | 太陽電池モジュール |
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JPWO2015056399A1 (ja) * | 2013-10-16 | 2017-03-09 | パナソニックIpマネジメント株式会社 | 太陽電池モジュール |
US20150362374A1 (en) * | 2014-06-16 | 2015-12-17 | The Government Of The United States Of America, As Represented By The Secretary Of The Navy | Atomic Layer Deposition of Vanadium Oxide for Microbolometer and Imager |
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-
2018
- 2018-11-03 KR KR1020180134024A patent/KR20200051112A/ko not_active Application Discontinuation
-
2019
- 2019-10-31 EP EP19206527.4A patent/EP3648177B1/en active Active
- 2019-11-01 JP JP2019200028A patent/JP7016848B2/ja active Active
- 2019-11-01 US US16/672,142 patent/US20200144430A1/en not_active Abandoned
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
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JP2006019440A (ja) | 2004-06-30 | 2006-01-19 | Kyocera Corp | 太陽電池モジュール |
US20090090412A1 (en) | 2005-12-22 | 2009-04-09 | Hermann Calwer | Photovoltaic device and method for encapsulating |
JP2009246208A (ja) | 2008-03-31 | 2009-10-22 | Kyocera Corp | 太陽電池モジュールおよびその製造方法 |
WO2014030225A1 (ja) | 2012-08-22 | 2014-02-27 | 三洋電機株式会社 | 太陽電池モジュール及びその製造方法 |
CN104966743A (zh) | 2015-07-21 | 2015-10-07 | 宁波华顺太阳能科技有限公司 | 一种抗pid光伏组件 |
JP2018093167A (ja) | 2016-12-02 | 2018-06-14 | エルジー エレクトロニクス インコーポレイティド | 太陽電池及びこれを含む太陽電池パネル |
JP2018107194A (ja) | 2016-12-22 | 2018-07-05 | パナソニックIpマネジメント株式会社 | 太陽電池モジュール、及び太陽電池モジュールの製造方法 |
Also Published As
Publication number | Publication date |
---|---|
EP3648177A1 (en) | 2020-05-06 |
EP3648177B1 (en) | 2023-03-15 |
KR20200051112A (ko) | 2020-05-13 |
JP2020072275A (ja) | 2020-05-07 |
US20200144430A1 (en) | 2020-05-07 |
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