JP7013286B2 - Board processing equipment and board processing method - Google Patents

Description

The present invention relates to a substrate processing apparatus and a substrate processing method.

Conventionally, a batch type drying unit that collectively performs a drying process on a plurality of substrates has been known (for example, Patent Document 1). In Patent Document 1, the drying chamber of the drying unit is provided with a storage tank, a first discharge nozzle, a second discharge nozzle, and a discharge portion. The first discharge nozzle is arranged vertically above the storage tank and supplies pure water to this storage tank. The second discharge nozzle is arranged vertically above the storage tank and selectively discharges IPA (isopropyl alcohol) steam and high-temperature gas for drying. The discharge unit has a discharge pipe communicated with the bottom of the storage tank and an on-off valve for switching the opening and closing of the flow path in the discharge pipe.

In this drying unit, pure water is first discharged from the first discharge nozzle to the storage tank. As a result, pure water is stored in the storage tank. When sufficient pure water is stored in the storage tank, a plurality of substrates are immersed in the pure water. The plurality of substrates are immersed in pure water in an upright position.

Next, the steam of IPA is discharged from the second discharge nozzle. This vapor liquefies on the liquid surface of pure water in the storage tank, and an IPA liquid film is formed. Next, while the IPA vapor is being discharged, the on-off valve is opened and the treatment liquid is discharged from the storage tank. As a result, the liquid film of IPA descends in the storage tank, and the pure water on the surface of the substrate is sequentially replaced with IPA. When the discharge of the treatment liquid is completed, the high temperature gas is discharged from the second discharge nozzle instead of the steam of IPA. By flowing this high temperature gas along the plurality of substrates, the plurality of substrates are dried.

In Patent Document 1, since high-temperature gas is supplied to a plurality of substrates in a state where IPA, which easily evaporates, is replaced with pure water, it is easy to avoid the generation of watermarks.

Japanese Unexamined Patent Publication No. 2012-199371

When the steam from the first discharge nozzle hits a part of the liquid surface of pure water more intensively, the liquid surface of pure water fluctuates and the thickness of the IPA liquid film formed on the liquid surface of pure water varies. Occurs. As a result, when pure water is discharged, the surface tension generated between the main surface of the substrate and the liquid film varies among the plurality of substrates. If this variation is large, the substrate can fall to the next substrate. More specifically, when the difference between the surface tension acting on one main surface of a certain substrate and the surface tension acting on the other main surface is large, the substrate is pulled by the larger surface tension, and the substrate is pulled by the larger surface tension. It can fall on the board next to it. When these substrates are in close contact with each other, the treatment liquid is unlikely to be replaced with an organic solvent at the close contact points.

Therefore, an object of the present application is to provide a substrate processing apparatus and a substrate processing method capable of reducing variations in surface tension generated between a substrate and a liquid film of an organic solvent among a plurality of substrates.

The first aspect of the substrate processing apparatus is a substrate processing apparatus that collectively processes a plurality of substrates, and is a storage tank, a first nozzle for supplying a treatment liquid to the storage tank, and the storage tank. The organic solvent vapor is discharged vertically upward from the horizontal direction, and the liquid film of the organic solvent is formed on the liquid surface of the treatment liquid stored in the storage tank. It is provided with at least one second discharge nozzle to be formed, a plate-shaped member arranged vertically above the second discharge nozzle, and a discharge portion for discharging the treatment liquid from the storage tank, and the at least one first. 2 The discharge nozzle discharges the vapor of the organic solvent toward the plate-shaped member .

A second aspect of the substrate processing apparatus is the substrate processing apparatus according to the first aspect, wherein the at least one second ejection nozzle is a pair of second ejection nozzles arranged at positions separated from each other in the horizontal direction. One of the pair of second discharge nozzles discharges the vapor of the organic solvent toward the other.

The third aspect of the substrate processing apparatus is the substrate processing apparatus according to the second aspect, in which the angles of the organic solvent vapor from the pair of second ejection nozzles with respect to the horizontal plane are different from each other.

A fourth aspect of the substrate processing apparatus is the substrate processing apparatus according to any one of the first to third aspects, further comprising a heating unit for heating the vapor of the organic solvent to 70 ° C. or higher.

A fifth aspect of the substrate processing apparatus is the substrate processing apparatus according to any one of the first to fourth aspects, which is arranged vertically between the storage tank and the at least one second discharge nozzle. Further, a third ejection nozzle for ejecting the gas for drying the substrate toward the plurality of substrates is further provided.

A sixth aspect of the substrate processing apparatus is the substrate processing apparatus according to any one of the first to fifth aspects, the first projection support portion and the first projection support portion protruding vertically upward from the bottom of the containment vessel. The inside of the substrate containment vessel is further provided with two protrusion support portions, and the plurality of substrates are immersed in the treatment liquid of the storage tank in a state of being stored in the substrate containment vessel in an upright position, and the plurality of substrates are accommodated. The space is open both vertically above and below vertically, and the tip of the first protrusion support portion and the tip of the second protrusion support portion are the plurality of substrates in the opening vertically below the substrate containment vessel. The plurality of substrates are floated and supported from the substrate containment vessel by abutting each of the side surfaces of the substrate.

A seventh aspect of the substrate processing apparatus is the substrate processing apparatus according to the sixth aspect, wherein the tip portions of the first projection support portion and the second projection support portion taper toward the vertically upper side. Has a shape.

An eighth aspect of the substrate processing apparatus is the substrate processing apparatus according to the seventh aspect, wherein the tip portion of the first projection support portion has a first tip surface and a second tip surface, and the second tip surface is provided. The surface is a surface on the side of the second protrusion support portion with respect to the first tip surface, and the tip portion of the second protrusion support portion has a third tip surface and a fourth tip surface, and the third tip surface. Is a surface on the side of the first protrusion support portion with respect to the fourth tip surface, the first tip surface is along the vertical direction from the second tip surface, and the fourth tip surface is the third tip surface. It is along the vertical direction from the tip surface.

A ninth aspect of the substrate processing apparatus is the substrate processing apparatus according to the eighth aspect, wherein the tip portion of the first projection support portion has a first tip surface and a second tip surface, and the second tip surface is provided. The surface is a surface on the side of the second protrusion support portion with respect to the first tip surface, and the tip portion of the second protrusion support portion has a third tip surface and a fourth tip surface, and the third tip surface. Is a surface on the side of the first protrusion support portion with respect to the fourth tip surface, the second tip surface is along the vertical direction from the first tip surface, and the third tip surface is the fourth. It is along the vertical direction from the tip surface.

The tenth aspect of the substrate processing apparatus is the substrate processing apparatus according to the eighth aspect, in which the tips of the first projection support portion and the second projection support portion are shaped along the hypotenuse of an isosceles triangle. Has.
The eleventh aspect of the substrate processing apparatus is a substrate processing apparatus that collectively processes a plurality of substrates, and is a storage tank, a first nozzle that supplies a treatment liquid to the storage tank, and the storage tank. The organic solvent vapor is discharged vertically above the horizontal direction or vertically above the horizontal direction to reach the liquid level of the treatment liquid stored in the storage tank. A pair of second discharge nozzles forming a liquid film of the organic solvent and a discharge unit for discharging the treatment liquid from the storage tank are provided, and the direction of discharge of the vapor of the organic solvent from the pair of second discharge nozzles The angles to the horizontal plane are different from each other.

The twelfth aspect of the substrate processing method is a substrate processing method in which a plurality of substrates are collectively processed, a step of immersing a plurality of substrates in a treatment liquid stored in a storage tank in an upright posture, and a discharge nozzle. However, the vapor of the organic solvent is discharged into the upper space of the storage tank toward the vertically upper side of the horizontal direction and toward the plate-shaped member arranged vertically above the discharge nozzle . A step of forming a liquid film of the organic solvent on the liquid surface of the treatment liquid stored in the storage tank and a step of discharging the treatment liquid from the storage tank are provided.

According to the first aspect of the substrate processing apparatus and the twelfth aspect of the substrate processing method, a plurality of substrates may be placed in a storage tank in an upright posture so that the plurality of substrates may be immersed in the processing liquid. can. Then, the second discharge nozzle discharges the vapor of the organic solvent vertically upward from the horizontal direction, so that the vapor comes into contact with the liquid level of the treatment liquid in a more spread state and is liquefied at the liquid level. As a result, the vapor can be brought into contact with the liquid surface of the treatment liquid more uniformly in a wider range. Therefore, the fluctuation of the liquid surface can be reduced, and the variation in the thickness of the liquid film of the organic solvent can be reduced. Therefore, it is possible to reduce the variation in surface tension acting between the plurality of substrates when the treatment liquid is discharged. Moreover, the steam hits the plate-shaped member and spreads, so that the steam comes into contact with the treatment liquid in a manner close to laminar flow. As a result, fluctuations in the liquid level of the treatment liquid can be further reduced, and variations in the thickness of the liquid film can be further reduced.

According to the second aspect of the substrate processing apparatus, it is easy to arrange the pair of second discharge nozzles at positions that do not obstruct the loading / unloading paths of the plurality of substrates, and it is easy to spread the steam in the upper space of the storage tank.

According to the third and eleventh aspects of the substrate processing apparatus, the steam from the pair of second discharge nozzles is less likely to collide and turbulence is less likely to be formed. Therefore, the vapor can be brought into contact with the liquid surface of the treatment liquid in a manner closer to laminar flow. Therefore, the fluctuation of the liquid surface of the treatment liquid can be further reduced, and the variation in the thickness of the liquid film can be further reduced.

According to the fourth aspect of the substrate processing apparatus, the concentration of the organic solvent at the gas-liquid interface between the liquid film and the upper space thereof can be increased, so that the surface tension between the substrate and the liquid film can be reduced.

According to the fifth aspect of the substrate processing apparatus, since the second discharge nozzle is arranged vertically above the third discharge nozzle, the second discharge nozzle can discharge steam at a position farther from the storage tank. Therefore, since the vapor comes into contact with the liquid surface of the treatment liquid at a lower pressure, the fluctuation of the liquid surface of the treatment liquid can be effectively reduced, and the variation in the thickness of the liquid film can be more effectively reduced. On the other hand, the third ejection nozzle can eject gas at a position closer to the substrate. Therefore, the gas can be brought into contact with the substrate at a higher pressure. As a result, the substrate can be dried more effectively.

According to the sixth aspect of the substrate processing apparatus, a gap is created between the side surface of the substrate and the surface of the substrate containment vessel in a state where a plurality of substrates are supported by the protrusion support portions. When the treatment liquid is discharged, the treatment liquid can flow through this gap, so that the treatment liquid is unlikely to remain. Therefore, it becomes easy to dry a plurality of substrates.

According to the seventh aspect of the substrate processing apparatus, the contact area between the protrusion support portion and the side surface of the substrate can be reduced, so that the treatment liquid is unlikely to remain at the contact portion.

According to the eighth aspect of the substrate processing apparatus, the processing liquid flowing vertically downward in the space between the side surface of the substrate and the substrate containment vessel when the treatment liquid is discharged is the first protrusion support portion at the opening. Flows toward the first tip surface of the above or the fourth tip surface of the second protrusion support portion. Since the first tip surface and the fourth tip surface are along the vertical direction, the treatment liquid that collides with these tip surfaces easily flows along the vertically downward direction and is easily discharged from the storage tank.

According to the ninth aspect of the substrate processing apparatus, the processing liquid flowing along the central portion of the substrate easily flows between the first projection support portion and the second projection support portion.

According to the tenth aspect of the substrate processing apparatus, in the first projection support portion, the first angle formed by the first tip surface and the side surface of the substrate and the second angle formed by the second tip surface and the side surface of the substrate are formed. Can be about the same. Therefore, it is easy to increase both the first angle and the second angle to some extent or more. Therefore, the amount of the treatment liquid remaining between the first projection support portion and the side surface of the substrate W can be reduced. The same applies to the second protrusion support portion.

It is a figure which shows typically an example of the structure of the substrate processing apparatus which concerns on 1st Embodiment. It is a flowchart which shows an example of the operation of a board processing apparatus. It is a figure which shows typically an example of the state of the substrate processing apparatus in each procedure. It is a figure which shows typically an example of the state of the substrate processing apparatus in each procedure. It is a figure which shows typically an example of the state of the substrate processing apparatus in each procedure. It is a figure which shows typically an example of the state of the substrate processing apparatus in each procedure. It is a figure which shows the example of the discharge direction of a discharge nozzle schematically. It is a figure which shows the other example of the discharge direction of a discharge nozzle schematically. It is a figure which shows typically an example of the structure of the substrate processing apparatus which concerns on 1st Embodiment. It is a figure which shows the example of a carrier schematically. It is a figure which shows the example of a carrier schematically. It is sectional drawing which shows typically an example of a substrate, a carrier, and a protrusion support part. It is sectional drawing which shows typically an example of a substrate, a carrier, and a protrusion support part. It is sectional drawing which shows typically an example of a substrate, a carrier, and a protrusion support part.

Hereinafter, embodiments will be described with reference to the attached drawings. It should be noted that the drawings are shown schematically, and for convenience of explanation, the configuration may be omitted or the configuration may be simplified as appropriate. Further, the interrelationship between the sizes and positions of the configurations and the like shown in the drawings is not always accurately described and can be changed as appropriate. Further, in each figure, in order to clarify the positional relationship of the components, an XYZ Cartesian coordinate system with the Z-axis direction as the vertical direction and the XY plane as the horizontal plane is appropriately attached. Hereinafter, one side in the Z-axis direction (here, the upper side) is referred to as a + Z side, and the other side in the Z-axis direction (here, the lower side) is also referred to as a −Z side. The same applies to the X-axis and the Y-axis.

Further, in the description shown below, similar components are illustrated with the same reference numerals, and their names and functions are the same. Therefore, detailed description of them may be omitted to avoid duplication.

The first embodiment.
<Board processing equipment>
FIG. 1 is a diagram schematically showing an example of the configuration of the substrate processing apparatus 10. The substrate processing apparatus 10 is a batch type processing apparatus that collectively processes a plurality of substrates W. As a more specific example, the substrate processing apparatus 10 is a drying processing apparatus that collectively performs a drying process on a plurality of substrates W.

The substrate W to be processed has a flat plate shape, and in the example of FIG. 1, it has a substantially circular shape in a plan view. The substrate W is, for example, a semiconductor substrate (for example, a semiconductor substrate for a power transistor). In addition to silicon, the semiconductor substrate also includes a semiconductor substrate such as GaAs (gallium arsenide) or SiC (silicon carbide).

The diameter of the plurality of substrates W is, for example, about several tens [mm] to several hundreds [mm]. The thickness of the substrate W is about several hundred [μm], for example, about 200 [μm] to 350 [μm]. As a more specific example, the diameter of the substrate W is about the same as the diameter of 8 inches (or 6 inches) in the SEMI (Semiconductor Equipment and Materials International) standard, and the thickness is 8 inches (or 6 inches). It's about half. If such a thin substrate W is adopted, more substrates W of the same size can be stored in the carrier (substrate containment vessel) C described later. That is, the number of substrates W that can be processed at one time can be increased. Therefore, the processing capacity of the substrate processing apparatus 10 can be improved. The substrate W is not necessarily limited to the semiconductor substrate, and may be any other substrate. Further, the above-mentioned size is an example and is not limited to this.

The plurality of substrates W are conveyed in the substrate processing apparatus 10 in a state of being stored in the carrier C. The carrier C has an internal space that opens at least on the + Z side and the −Z side, and a plurality of substrates W are stored in this internal space. The plurality of substrates W are in an upright posture in the internal space of the carrier C, and are stored side by side along the Y-axis direction. The standing posture is a posture in which the normal direction of the substrate W is along the Y-axis direction. The number of substrates W stored in the carrier C is not particularly limited, but is, for example, about several tens (for example, 50).

Here, the plurality of substrates W are appropriately treated with a chemical solution, a treatment with a cleaning solution, or the like before being conveyed to the substrate processing apparatus 10, and the substrate processing apparatus 10 is subjected to the treatment with the plurality of substrates. W is subjected to a drying treatment.

The substrate processing device 10 includes a chamber 1, a storage tank 2, a processing liquid supply unit 3, a discharge unit 4, an organic solvent gas supply unit 5, a high temperature gas supply unit 6, and a control unit 7.

The chamber 1 forms a processing chamber in which processing on the substrate W is performed. The chamber 1 has a housing 11 and a lid 12. The lid 12 is attached to the upper surface of the housing 11. When the lid 12 is opened, an opening is formed in the upper surface of the housing 11, and when the lid 12 is closed, the opening is closed. The opening and closing of the lid 12 is controlled by the control unit 7.

A storage tank 2 is arranged inside the chamber 1 (housing 11). The storage tank 2 has an opening that opens on the + Z side, and the treatment liquid is supplied to the inside of the storage tank 2 from this opening. The storage tank 2 stores the supplied treatment liquid. In the example of FIG. 1, the storage tank 2 is fixed to the housing 11 via the fixing member 21 in a state of being separated from the bottom of the housing 11.

The plurality of substrates W are conveyed into the chamber 1 by a transfer mechanism (not shown) in a state of being stored in the carrier C. Specifically, the carrier C passes through the opening of the housing 11 when the lid 12 is opened and is placed on the bottom of the storage tank 2.

The treatment liquid supply unit 3 supplies the treatment liquid to the storage tank 2. The processing liquid supply unit 3 includes a discharge nozzle 31, a supply pipe 32, and an on-off valve 33. The discharge nozzle 31 is arranged on the + Z side of the storage tank 2 inside the housing 11, and is fixed to, for example, the inner surface of the housing 11. Further, the discharge nozzle 31 is communicated with and connected to the processing liquid supply source 34 via the supply pipe 32. That is, one end of the supply pipe 32 is communicated with the discharge nozzle 31, and the other end is communicated with the processing liquid supply source 34. The on-off valve 33 is provided in the middle of the supply pipe 32, and switches the opening and closing of the flow path in the supply pipe 32. When the on-off valve 33 opens, the processing liquid flows from the processing liquid supply source 34 to the inside of the supply pipe 32, and is discharged from the discharge nozzle 31 to the storage tank 2. When the on-off valve 33 is closed, the discharge of the processing liquid from the discharge nozzle 31 is completed. The treatment liquid is, for example, pure water.

The discharge unit 4 discharges the treatment liquid in the storage tank 2 to the outside of the chamber 1. The discharge unit 4 includes discharge pipes 41 and 42 and on-off valves 43 and 44. The discharge pipe 41 is a pipe for discharging the treatment liquid stored in the storage tank 2 to the outside of the storage tank 2. In the example of FIG. 1, one end of the discharge pipe 41 is communicated with the bottom of the storage tank 2, and the other end is open in the housing 11. The on-off valve 43 is provided in the middle of the discharge pipe 41, and switches the opening and closing of the flow path in the discharge pipe 41. When the on-off valve 43 is opened, the processing liquid inside the storage tank 2 passes through the inside of the discharge pipe 41 and flows out from the other end of the discharge pipe 41 to the bottom of the housing 11. When the on-off valve 43 is closed, the discharge of the treatment liquid from the storage tank 2 is completed.

The discharge pipe 42 discharges the treatment liquid collected at the bottom of the housing 11 to the outside of the chamber 1. One end of the discharge pipe 42 is communicated with the bottom of the housing 11, and the other end is communicated with the drain drain 45. The on-off valve 44 is provided in the middle of the discharge pipe 42, and switches the opening and closing of the flow path in the discharge pipe 42. By opening the on-off valve 44, the processing liquid in the housing 11 is discharged to the discharge drain 45 through the inside of the discharge pipe 42. When the on-off valve 44 is closed, the discharge of the treatment liquid from the housing 11 is completed.

The organic solvent gas supply unit 5 supplies the vapor of the organic solvent to the space on the + Z side (hereinafter, also referred to as an upper space) with respect to the storage tank 2. The organic solvent gas supply unit 5 includes a discharge nozzle 51, supply pipes 52a to 52c, an on-off valve 53, and a heating unit 54. The discharge nozzle 51 is arranged on the + Z side with respect to the storage tank 2 inside the chamber 1 (housing 11). In the example of FIG. 1, a pair of discharge nozzles 51a and 51b are arranged as discharge nozzles 51. The discharge nozzles 51a and 51b are separated from each other in the X-axis direction, for example. The discharge nozzle 51a is arranged on the −X side, and the discharge nozzle 51b is arranged on the + X side. Further, in the example of FIG. 1, the discharge nozzles 51a and 51b are arranged at the same height position in the Z-axis direction. The discharge nozzles 51a and 51b are fixed to, for example, the inner surface of the housing 11. Each of the discharge nozzles 51a and 51b may extend along the Y-axis direction, for example, or may have a plurality of discharge ports arranged along the Y-axis direction.

The discharge nozzle 51a is communicated with the organic solvent gas supply source 55 via the supply pipes 52a and 52c. Specifically, one end of the supply pipe 52a is communicated with the discharge nozzle 51a, the other end of the supply pipe 52a is communicated with one end of the supply pipe 52c, and the other end of the supply pipe 52c is connected to the organic solvent gas supply source 55. Communicated. The discharge nozzle 51b is communicated with the organic solvent gas supply source 55 via the supply pipes 52b and 52c. Specifically, one end of the supply pipe 52b is communicated with the discharge nozzle 51b, and the other end of the supply pipe 52b is communicated with one end of the supply pipe 52c.

The organic solvent gas supply source 55 supplies the vapor of the organic solvent to the other end of the supply pipe 52c. The organic solvent is a solvent having a lower surface tension than the treatment liquid. Further, since the substrate processing apparatus 10 performs a drying treatment for drying the substrate W, it is preferable to use an organic solvent having a smaller latent heat of vaporization than the treatment liquid for the drying. As a specific example, for example, IPA (isopropyl alcohol) is adopted. As the carrier gas, the organic solvent gas supply source 55 also supplies a gas that does not easily cause a chemical reaction with the substrate W (for example, a rare gas such as helium and argon) or a gas having a low chemical reactivity (for example, nitrogen gas). Supply to the other end of 52c.

The on-off valve 53 is provided in the middle of the supply pipe 52c to switch the opening and closing of the flow path in the supply pipe 52c. The heating unit 54 is a heater and is provided in the supply pipe 52c. The heating unit 54 heats the steam flowing inside the supply pipe 52c to, for example, 70 ° C. or higher.

When the on-off valve 53 is opened, the vapor of the organic solvent flows from the organic solvent gas supply source 55 to the inside of the supply pipes 52a to 52c, and is discharged from the discharge nozzles 51a and 51b to the upper space of the storage tank 2. This vapor spreads in the upper space, and a part of the vapor is liquefied at the liquid level of the treatment liquid stored in the storage tank 2 to form a liquid film.

The discharge nozzles 51a and 51b discharge the vapor of the organic solvent along the horizontal direction. That is, the discharge direction of the vapor of the organic solvent from the discharge nozzles 51a and 51b is the horizontal direction (for example, the X-axis direction). Specifically, the discharge nozzle 51a discharges steam toward the discharge nozzle 51b along the X-axis direction, and the discharge nozzle 51b discharges steam toward the discharge nozzle 51a along the X-axis direction. The discharge direction can be determined according to the shape of the discharge hole formed in the discharge nozzle 51. The discharge hole is a hole that communicates the inside of the discharge nozzle 51 with the discharge port. For example, the extending direction of the discharge hole near the discharge port (that is, the opening axis of the discharge port) is defined as the steam discharge direction. can do.

The high temperature gas supply unit 6 supplies a gas for drying the substrate (high temperature gas) to the plurality of substrates W. The high temperature gas supply unit 6 includes a discharge nozzle 61, supply pipes 62a to 62c, an on-off valve 63, and a heating unit 64. The discharge nozzle 61 is arranged on the + Z side of the storage tank 2 inside the chamber 1 (housing 11). In the example of FIG. 1, a pair of discharge nozzles 61a and 61b are arranged as the discharge nozzles 61. The discharge nozzles 61a and 61b are separated from each other in the X-axis direction, for example. The discharge nozzle 61a is arranged on the −X side, and the discharge nozzle 61b is arranged on the + X side. Further, in the example of FIG. 1, the discharge nozzles 61a and 61b are arranged at the same height position as each other, and are arranged on the −Z side of the discharge nozzles 51a and 51b, respectively. In other words, the discharge nozzle 61a is arranged between the storage tank 2 and the discharge nozzle 51a in the Z-axis direction, and the discharge nozzle 61b is arranged between the storage tank 2 and the discharge nozzle 51b in the Z-axis direction. The discharge nozzles 61a and 61b extend, for example, along the Y-axis direction, and may have a plurality of discharge ports arranged along the Y-axis direction.

The discharge nozzle 61a is communicated with the gas supply source 65 via the supply pipes 62a and 62c. Specifically, one end of the supply pipe 62a is communicated with the discharge nozzle 61a, the other end of the supply pipe 62a is communicated with one end of the supply pipe 62c, and the other end of the supply pipe 62c is communicated with the gas supply source 65. Will be done. The discharge nozzle 61b is communicated with the gas supply source 65 via the supply pipes 62b and 62c. Specifically, one end of the supply pipe 62b is communicated with the discharge nozzle 61b, and the other end of the supply pipe 62b is communicated with one end of the supply pipe 62c.

The gas supply source 65 is a gas that does not easily cause a chemical reaction with the substrate W (for example, a rare gas such as helium and argon) or a gas having low chemical reactivity (for example, nitrogen gas) at the other end of the supply pipe 62c. Supply.

The on-off valve 63 is provided in the middle of the supply pipe 62c, and switches the opening and closing of the flow path in the supply pipe 62c. The heating unit 64 is, for example, a heater, and is provided in the supply pipe 62c. The heating unit 64 heats the gas flowing inside the supply pipe 62c, for example, in the range of 100 ° C to 200 ° C.

When the on-off valve 63 is opened, gas flows from the gas supply source 65 inside the supply pipes 62a to 62c, and is discharged as high-temperature gas from the discharge nozzles 61a and 61b toward the plurality of substrates W.

The control unit 7 comprehensively controls the substrate processing device 10. Specifically, the control unit 7 executes opening / closing control of the lid 12, opening / closing control of the on-off valves 33, 43, 44, 53, 63, and heating control of the heating units 54, 64. Further, the control unit 7 may also control a transport mechanism (not shown). This transport mechanism carries the carrier C containing the plurality of substrates W into the chamber 1 from the outside, or carries it out from the chamber 1 to the outside.

The control unit 7 is an electronic circuit device, and may include, for example, a data processing device and a storage medium. The data processing device may be, for example, an arithmetic processing unit such as a CPU (Central Processor Unit). The storage unit may have a non-temporary storage medium (for example, ROM (Read Only Memory) or hard disk) and a temporary storage medium (for example, RAM (Random Access Memory)). For example, a program that defines a process executed by the control unit 7 may be stored in the non-temporary storage medium. When the processing device executes this program, the control unit 7 can execute the processing specified in the program. Of course, a part or all of the processing executed by the control unit 7 may be executed by the hardware.

<Operation of drying process>
FIG. 2 is a flowchart showing an example of the operation (drying process) of the substrate processing apparatus 10, and FIGS. 3 to 6 are diagrams schematically showing an example of the state inside the substrate processing apparatus 10 in each procedure. Before executing this series of procedures, the on-off valves 33, 43, 44, 53, 63 are closed. First, in step S1, the control unit 7 opens the on-off valve 33 to supply the processing liquid to the storage tank 2. As a result, as shown in FIG. 3, the treatment liquid is stored in the storage tank 2. When sufficient treatment liquid is stored in the storage tank 2, in step S2, the control unit 7 controls the transport mechanism to carry a plurality of substrates W into the substrate processing device 10. Specifically, the control unit 7 opens the lid 12, and in that state, the carrier C is carried into the chamber 1 by the transfer mechanism and placed on the bottom of the storage tank 2. As a result, the plurality of substrates W stored in the carrier C are immersed in the treatment liquid. Then, the control unit 7 pulls out a part (hand) of the transport mechanism from the chamber 1, closes the lid 12, and closes the on-off valve 33. When the on-off valve 33 closes, the supply of the treatment liquid ends.

Next, in step S3, the control unit 7 causes the organic solvent gas supply unit 5 to supply the vapor of the organic solvent into the chamber 1. Specifically, the control unit 7 opens the on-off valve 53 and causes the heating unit 54 to heat the vapor of the organic solvent to, for example, 70 ° C. or higher. As a result, as shown in FIG. 4, the vapor of the organic solvent is discharged from the discharge nozzles 51a and 51b into the upper space of the storage tank 2 in the chamber 1. In FIG. 4, the discharge of steam is schematically shown by a broken line arrow. Since the discharge direction of the steam from the discharge nozzles 51a and 51b is along the horizontal direction, this steam tends to spread in the upper space. A part of this vapor is liquefied at the liquid level of the treatment liquid stored in the storage tank 2 to form a liquid film F1 of an organic solvent.

Next, in step S4, the control unit 7 causes the discharge unit 4 to discharge the processing liquid. Specifically, the control unit 7 opens the on-off valves 43 and 44. As a result, as shown in FIG. 5, the treatment liquid in the storage tank 2 is discharged. In FIG. 5, the discharge of the treatment liquid is schematically shown by the broken line arrows near the discharge pipes 41 and 42. Due to the discharge of this treatment liquid, the liquid film F1 is lowered with the passage of time. When the liquid film F1 comes into contact with the main surface of each substrate W, the treatment liquid adhering to the main surface of each substrate W is sequentially replaced with the organic solvent.

Here, the vapor of the organic solvent is continuously supplied into the chamber 1 even during the period when the treatment liquid is discharged from the storage tank 2. As a result, it is possible to replenish the decrease in the thickness of the liquid film F1 due to the replacement of the treatment liquid adhering to each substrate W with the organic solvent. Therefore, the process of replacing the pure water with the organic solvent is more reliably executed in each substrate W.

When the treatment liquid is sufficiently discharged, that is, when the treatment liquid adhering to the substrate W is sufficiently replaced with the organic solvent, the control unit 7 supplies the high temperature gas to the plurality of substrates W in step S5. Specifically, the control unit 7 closes the on-off valves 33, 43, 44 and opens the on-off valve 63. By closing the on-off valves 33, 43, 44, the discharge of the vapor of the organic solvent and the discharge of the treatment liquid are completed. Further, when the on-off valve 63 is opened, the gas from the gas supply source 65 flows inside the supply pipe 62c. The control unit 7 causes the heating unit 64 to heat the gas in the range of, for example, 100 ° C to 200 ° C. As a result, as shown in FIG. 6, high-temperature gas is discharged from the discharge nozzles 61a and 61b toward the plurality of substrates W. In FIG. 6, the discharge of the high temperature gas is schematically shown by a broken line arrow. When the high temperature gas comes into contact with the plurality of substrates W, the organic solvent having a low latent heat of vaporization easily evaporates and the plurality of substrates W are dried.

Next, in step S6, the substrate W is carried out. More specifically, after the control unit 7 opens the lid 12, the transport mechanism carries the carrier C out of the substrate processing device 10.

As described above, in the substrate processing apparatus 10, the processing liquid adhering to the plurality of substrates W is replaced with an organic solvent having a low latent heat of vaporization, and then the substrate W is dried. Therefore, the possibility of watermarking can be reduced.

Moreover, in the substrate processing apparatus 10, the discharge direction of the vapor of the organic solvent from the discharge nozzle 51 is the horizontal direction. Therefore, the vapor of the organic solvent discharged from the discharge nozzle 51 easily spreads in the upper space of the storage tank 2, and comes into more uniform contact with the liquid level of the treatment liquid stored in the storage tank 2 in a wider range. Therefore, the liquid level of the treatment liquid stored in the storage tank 2 is less likely to fluctuate, and the variation in the thickness of the liquid film F1 can be reduced. Thereby, it is possible to reduce the variation in the surface tension between the substrate W and the liquid film F1 when the treatment liquid is discharged, among the plurality of substrates W.

For example, consider the case where the surface tension generated between the main surface on the −Y side of a certain substrate W and the liquid film F1 is larger than the surface tension generated between the main surface on the + Y side of the substrate W and the liquid film F1. do. Unlike the present embodiment, when the difference in these surface tensions is large, the substrate W may fall to the −Y side. Such a fall is more likely to occur as the weight of the substrate W is lighter and as the substrate W is thinner. Further, the thinner the substrate W, the more easily the damage due to the collision occurs. Therefore, when the thin substrate W collides with the adjacent substrate W, the substrate W may be damaged. However, in the present substrate processing apparatus 10, since the difference (variation) in surface tension can be reduced as described above, the substrate W is less likely to fall down. As a result, the possibility that the substrate W is damaged can be reduced.

Further, when the substrate W is thin, the substrate W may bend due to the difference in surface tension and may come into close contact with the adjacent substrate W. When the substrate W is in close contact with the substrate W in this way, the pure water is not easily replaced with the organic solvent at the close contact portion, and drying becomes difficult. However, in the present substrate processing apparatus 10, since the difference in surface tension can be reduced, such a defect is unlikely to occur.

The discharge direction of the vapor of the organic solvent from the discharge nozzles 51a and 51b does not necessarily have to be along the horizontal direction. For example, the discharge nozzles 51a and 51b may discharge the vapor of the organic solvent toward the + Z side of the horizontal direction. That is, the discharge direction may be a direction facing the + Z side rather than the horizontal direction. Also in this case, the vapor of the organic solvent discharged from the discharge nozzles 51a and 51b easily spreads in the upper space and comes into more uniform contact with the liquid surface of the treatment liquid in a wider range. Therefore, it is possible to reduce the variation in surface tension between the liquid film F1 and the substrate W.

Further, in the above example, the discharge nozzles 51a and 51b are arranged on the + Z side with respect to the discharge nozzles 61a and 61b, respectively. Therefore, the discharge nozzles 51a and 51b can discharge steam at a position farther from the storage tank 2. According to this, the steam tends to spread in a wider range until it comes into contact with the liquid surface of the treatment liquid in the storage tank 2. Therefore, the fluctuation of the liquid surface of the treatment liquid can be effectively reduced, and the variation in the thickness of the liquid film F1 can be more effectively reduced. On the other hand, the discharge nozzles 61a and 61b can discharge the high temperature gas at a position closer to the substrate W. Therefore, the high temperature gas can be brought into contact with the substrate W at a higher pressure and a higher temperature. Thereby, the substrate W can be dried more effectively.

Further, in the above example, the heating unit 54 heats the vapor of the organic solvent to 70 degrees or higher. As a result, the concentration of the organic solvent at the gas-liquid interface between the liquid film F1 and the upper space thereof is increased, and the surface tension acting on the substrate W can be reduced.

Further, in the example of FIG. 1, one of the discharge nozzles 51a and 51b discharges the vapor of the organic solvent toward the other. That is, the discharge nozzles 51a and 51b discharge steam toward each other. According to this, it is easy to arrange the pair of discharge nozzles 51a and 51b at positions that do not obstruct the carry-in / out paths (that is, the upper space of the storage tank 2) of the plurality of substrates W, and steam is discharged from both sides in the X-axis direction. Because it is, it is easy to spread in the upper space.

<Discharge direction of vapor of organic solvent>
<Asymmetric>
In the example of FIG. 1, the discharge directions of the discharge nozzles 51a and 51b are substantially symmetrical with respect to the YZ plane. However, the discharge directions of the discharge nozzles 51a and 51b may be asymmetric. FIG. 7 is a diagram showing an example of the ejection directions of the pair of ejection nozzles 51a and 51b. In the example of FIG. 7, the angle θ1 (0 degrees or more and 90 degrees or less) between the discharge direction of the discharge nozzle 51a and the horizontal plane is the angle θ2 (0 degrees or more and 90 degrees or less) between the discharge direction of the discharge nozzle 51b and the horizontal plane. ) Is different. That is, the pair of discharge nozzles 51a and 51b discharge the vapor of the organic solvent in the discharge directions that are asymmetrical with each other.

According to this, the vapor of the organic solvent discharged from the discharge nozzle 51a and the vapor of the organic solvent discharged from the discharge nozzle 51b are less likely to collide with each other, and turbulence is less likely to be formed. That is, steam can flow in the upper space of the storage tank 2 in a manner closer to laminar flow. As a result, the steam can be brought into contact with the treatment liquid in the storage tank 2 in a manner closer to laminar flow. According to this, since the vapor comes into contact with the liquid level of the treatment liquid more uniformly, the fluctuation of the liquid level of the treatment liquid in the storage tank 2 can be further reduced, and the variation in the thickness of the liquid film F1 can be further reduced.

<Top plate>
The discharge nozzles 51a and 51b may discharge the vapor of the organic solvent toward the top plate (here, the lid 12) of the chamber 1. In other words, the angles θ1 and θ2 may be 45 degrees or more and 90 degrees or less. Here, the lid 12 has, for example, a plate-like shape, and its lower surface extends along a horizontal plane. FIG. 8 is a diagram showing an example of the ejection directions of the pair of ejection nozzles 51a and 51b. As illustrated in FIG. 8, the vapor of the organic solvent discharged from the discharge nozzle 51a collides with the lower surface 12a of the lid 12, spreads toward the + X side along the lower surface 12a, and flows toward the −Z side. Similarly, the vapor of the organic solvent discharged from the discharge nozzle 51b collides with the lower surface 12a of the lid 12, spreads toward the −X side, and flows toward the −Z side. In other words, the distance between the lid 12 and each of the discharge nozzles 51a and 51b and the discharge pressure of the steam from the discharge nozzles 51a and 51b are set so that the steam collides with the lower surface 12a of the lid 12.

Since the vapor of the organic solvent once collides with the lower surface 12a of the lid 12 and flows, the vapor after the collision flows in a manner close to laminar flow. Therefore, the vapor flows in the upper space of the storage tank 2 in a manner close to the laminar flow, and eventually comes into contact with the treatment liquid in the storage tank 2 in a manner close to the laminar flow. Therefore, the fluctuation of the liquid level of the treatment liquid in the storage tank 2 can be further reduced, and the variation in the thickness of the liquid film F1 can be further reduced.

In the above example, although the lid 12 of the chamber 1 is used, it is not always limited to this. A plate-shaped member that is arranged on the + Z side of the discharge nozzles 51a and 51b and faces them in the Z-axis direction may be provided. The plate-shaped member is arranged in a posture in which the thickness direction thereof is along the Z axis. It can be said that the lid 12 is also a kind of this plate-shaped member.

The second embodiment.
FIG. 9 is a diagram schematically showing an example of the configuration of the substrate processing device 10A. The substrate processing apparatus 10A differs from the substrate processing apparatus 10 in that the protrusion support portion 8 is present or absent.

<Carrier C>
Prior to the description of the protrusion support portion 8, an example of the shape of the carrier C will be described in detail first. 10 and 11 are diagrams schematically showing an example of the configuration of the carrier C. FIG. 10 shows the carrier C as viewed along the Y-axis direction, and FIG. 11 shows the configuration of the carrier C in the XY cross section.

The carrier C includes a pair of side portions 91, a pair of connecting portions 92, a plurality of partition portions 93, and a leg portion 94. The pair of side portions 91 face each other in the X-axis direction. The pair of connecting portions 92 each connect the pair of side portions 91. Specifically, one of the pair of connecting portions 92 connects the ends on the −Y side of the pair of side portions 91, and the other of the pair of connecting portions 92 connects the ends on the + Y side of the pair of side portions 91. To concatenate. That is, when viewed along the Z-axis direction, the space surrounded by the pair of side portions 91 and the pair of connecting portions 92 is the internal space of the carrier C. The plurality of substrates W are stored in the internal space.

With the substrate W stored in the carrier C, the pair of side portions 91 face the side surfaces of the plurality of substrates W. In the example of FIG. 10, the pair of side portions 91 each have an arcuate shape along the side surface of the substrate W when viewed along the Y-axis direction, and the distance between the pair of side portions 91 is on the −Z side. It spreads from to the + Z side. The distance between the pair of side portions 91 is wider than the diameter of the substrate W on the + Z side and narrower than the diameter of the substrate W on the −Z side. The substrate W is inserted into the internal space of the carrier C from the + Z side. Then, a part of the inner surface of each side portion 91 comes into contact with a part of the side surface of the substrate W, so that the carrier C supports the substrate W. Specifically, a part of the side surface of the substrate W on the −Z side is in contact with a part of the inner surface of each side portion 91, whereby the pair of side portions 91 are X in the carrier C of the substrate W. The axial and Z-axis positions are substantially fixed. Hereinafter, the inner surface of the side portion 91 facing the side surface of the substrate W is referred to as a facing surface 911.

The plurality of partition portions 93 project from the facing surface 911 of the side portions 91 between the plurality of substrates W. Therefore, each partition 93 is located between the two substrates W. The partition portion 93 regulates the position of the substrate W in the Y-axis direction so that the substrate W is stored in an upright posture.

The leg portion 94 is a member on which the carrier C is placed, and for example, the leg portion 94 projects from the end portion of the side portion 91 on the −Z side toward the −Z side. The carrier C is placed in the storage tank 2 when the end portion of the leg portion 94 on the −Z side comes into contact with the bottom portion of the storage tank 2.

In this carrier C, the pair of side portions 91 are separated from each other in the X-axis direction, and the pair of connecting portions 92 are separated from each other in the Y-axis direction. Therefore, the internal space of the carrier C communicates with the space on the + Z side and also communicates with the space on the −Z side. That is, the carrier C has an opening 9a that opens to the + Z side at the upper portion thereof, and an opening 9b that opens to the −Z side at the lower portion thereof. The plurality of substrates W are inserted into the carrier C via the opening 9a. In a state where a plurality of substrates W are stored in the carrier C, a part of each substrate W on the −Z side is exposed from the carrier C at the opening 9b. That is, when viewed from the −Z side, a part of the side surface of the substrate W is visible from the opening 9b.

<Protrusion support>
FIG. 12 is a diagram for explaining the positional relationship between the protrusion support portion 8, the carrier C, and the substrate W. FIG. 12 shows a ZX cross section at a position passing through one substrate W. With reference to FIGS. 9 and 12, the protrusion support portion 8 projects from the bottom of the storage tank 2 toward the + Z side. The protrusion support portion 8 may be formed of, for example, quartz or resin. The protrusion support portion 8 is arranged in a region facing the opening 9b in the Z-axis direction with the carrier C placed inside the storage tank 2. The tip of the protrusion support portion 8 (the end on the + Z side) abuts on the side surface of the plurality of substrates W at the opening 9b of the carrier C, and supports the plurality of substrates W in a floating state with respect to the carrier C. That is, in a state where the plurality of substrates W are supported by the protrusion support portion 8, the substrate W is separated from the facing surface 911 of the side portion 91, and the carrier C no longer supports the plurality of substrates W in the Z-axis direction. Not. However, each partition 93 is located between the two substrates W even in this state so that the upright posture of the substrate W can be maintained. Such support can be realized by adjusting the height of the protrusion support portion 8 in the Z-axis direction.

In the examples of FIGS. 9 and 12, a pair of protrusion support portions 8a and 8b are provided as the protrusion support portions 8. The protrusion support portions 8a and 8b are arranged at positions sandwiching the center of the substrate W in the X-axis direction. The tip of the protrusion support portion 8a abuts on the side surface of the plurality of boards W at a position shifted to the −X side from the center of the substrate W, and the tip of the protrusion support portion 8b is shifted to the + X side from the center of the substrate W. Abuts on the side surfaces of the plurality of substrates W. Thereby, the protrusion support portions 8a and 8b can fix the positions of the substrate W in the X-axis direction and the Z-axis direction. In the protrusion support portions 8a and 8b, the distance between the contact position between the protrusion support portion 8a and the substrate W and the contact position between the protrusion support portion 8b and the substrate W is about several tens [mm] (for example, 40 [mm]). It is placed in the position where.

Further, the protrusion support portion 8a is separated from any of the pair of side portions 91 in the X-axis direction, and the protrusion support portion 8b is separated from any of the pair of side portions 91 in the X-axis direction. That is, a gap is formed between the protrusion support portion 8a and the side portion 91 on the −X side (hereinafter, also referred to as the side portion 91a), and the protrusion support portion 8b and the side portion 91 on the + X side (hereinafter, side). A gap is also formed between the portion 91b).

In this substrate processing apparatus 10A, the space between the side surface of the substrate W and the facing surface 911 communicates with the opening 9a on the + Z side of the carrier C in the ZX plane and also communicates with the opening 9b on the −Z side. There is. In other words, the space connects the openings 9a and 9b.

The operation of the substrate processing apparatus 10A is the same as that of the first embodiment, and the specific flowchart thereof is the same as that of FIG. However, in step S2, when the carrier C is inserted into the storage tank 2 from the + Z side, the tip of the protrusion support portion 8 is a plurality of substrates W before the carrier C is placed on the bottom of the storage tank 2. Abut on the side of. The carrier C continues to move to the −Z side, while the plurality of substrates W are supported by the protrusion support portion 8 and therefore do not move to the −Z side. Therefore, the plurality of substrates W are supported in a floating state with respect to the carrier C.

In this state, the space between the side surface of the substrate W and the facing surface 911 of the side portion 91 connects the openings 9a and 9b of the carrier C in the ZX plane (see FIG. 12). Therefore, when the treatment liquid is discharged in step S4, the treatment liquid in the space between the side surface of the substrate W and the facing surface 911 of the side portion 91 easily flows to the −Z side, and the treatment liquid easily flows to the −Z side, and the storage tank 2 is passed through the opening 9b. Easy to carry out from the bottom of the. In other words, residual treatment liquid is unlikely to occur in the space between the side surface of the substrate W and the facing surface 911 of the side portion 91.

For comparison, a case where a part of the side surface of the substrate W is in contact with the facing surface 911 of the side portion 91 (see FIG. 10) will be described. In this case, when the treatment liquid is discharged, the treatment liquid between the side surface of the substrate W and the facing surface 911 tends to remain at the contact point between the side surface of the substrate W and the facing surface 911, and the treatment liquid is difficult to be properly discharged. .. If the treatment liquid remains on the side surface of the substrate W in this way, the time required for drying the substrate W becomes long.

Further, the residual of this treatment liquid is more likely to occur as the gap D (see FIG. 11) between the partition portion 93 and the main surface of the substrate W is narrower. For example, the distance between the substrates W in the Y-axis direction also depends on the number of substrates W. If the number of substrates W is increased without increasing the width of the carrier C in the Y-axis direction, it is necessary to narrow the distance between the substrates W, and accordingly, between the substrate W and the partition portion 93. The gap D is also narrowed.

According to the substrate processing apparatus 10A, since the substrate W can be supported in a state of being moved (floating state) relatively to the + Z side with respect to the carrier C, the space between the side surface of the substrate W and the facing surface 911. Connects the openings 9a and 9b. As a result, the treatment liquid in the space can be easily flowed to the opening 9b side, and the treatment liquid is less likely to remain. Therefore, the drying time in step S5 can be shortened. The inventor has confirmed that the drying time can be reduced to about 2/3 by adopting the substrate processing apparatus 10A.

<Shape of protrusion support>
In the examples of FIGS. 9 and 12, the protrusion support portion 8 has a tapered shape that tapers toward the + Z side. According to this, since the contact area between the protrusion support portion 8 and the side surface of the substrate W can be reduced, the residual amount of the treatment liquid at this contact portion can also be reduced. From this point of view, it is desirable that the protrusion support portion 8 comes into contact with the substrate W by point contact on the ZX plane. Further, the protrusion support portion 8 may extend uniformly along the Y-axis direction. According to this, the contact area with the side surface of all the substrates W can be reduced.

In the following, the -X-side surface and the + X-side surface forming the tip portion of the protrusion support portion 8a are referred to as tip surfaces 81 and 82, respectively, and the-X-side surface and + X forming the tip portion of the protrusion support portion 8b, respectively. The side surfaces are referred to as tip surfaces 83 and 84, respectively. The tip surfaces 81 and 82 are, for example, flat surfaces and are connected to each other at the ends on the + Z side thereof to form a tapered shape of the protrusion support portion 8a. The tip surfaces 83 and 84 are, for example, flat surfaces and are connected to each other at the ends on the + Z side thereof to form a tapered shape of the protrusion support portion 8b.

In the example of FIG. 12, in the protrusion support portion 8a located on the −X side of the center of the substrate W, the tip surface 81 on the −X side is along the Z-axis direction with respect to the tip surface 82 on the + X side. Conversely, the inclination of the tip surface 82 in the protrusion support portion 8a is gentler than the inclination of the tip surface 81.

On the other hand, in the protrusion support portion 8b located on the + X side with respect to the center of the substrate W, the tip surface 84 on the + X side is along the Z-axis direction with respect to the tip surface 83 on the −X side. Conversely, the inclination of the tip surface 83 in the protrusion support portion 8b is gentler than the inclination of the tip surface 84.

More specifically, the tips of the pair of protrusion support portions 8 have the same shape as the cutter blade in the ZX plane, and the vertices thereof are located at both ends in the X-axis direction. That is, the protrusion support portion 8a on the −X side has a cutter blade shape whose apex is shifted to the −X side, and the protrusion support portion 8b on the + X side has a cutter blade shape whose apex is shifted to the + X side. Have.

The processing liquid flowing through the space between the facing surface 911 of the side portion 91a and the side surface of the substrate W flows toward the protrusion support portion 8a at the opening portion 9b. Then, the treatment liquid hits the tip surface 81 of the protrusion support portion 8a. Since the tip surface 81 of the protrusion support portion 8a is along the Z-axis direction, the treatment liquid tends to flow toward the −Z side along the tip surface 81. Therefore, the treatment liquid can be easily discharged.

Similarly, the processing liquid flowing through the space between the facing surface 911 of the side portion 91b and the substrate W flows toward the protrusion support portion 8b at the opening portion 9b. This treatment liquid hits the tip surface 84 of the protrusion support portion 8b. Since the tip surface 84 of the protrusion support portion 8b is along the Z-axis direction, the treatment liquid easily flows to the −Z side along the tip surface 84. Therefore, the treatment liquid can be easily discharged.

<First modification>
FIG. 13 is a diagram showing another example of the shape of the protrusion support portion 8. In the example of FIG. 13, in the protrusion support portion 8a located on the −X side of the center of the substrate W, the tip surface 82 on the + X side is along the Z-axis direction with respect to the tip surface 81 on the −X side. Conversely, the inclination of the tip surface 81 in the protrusion support portion 8a is gentler than the inclination of the tip surface 82. Similarly, in the protrusion support portion 8b located on the + X side of the center of the substrate W, the tip surface 83 on the −X side is along the Z-axis direction with respect to the tip surface 84 on the + X side. Conversely, the inclination of the tip surface 84 in the protrusion support portion 8b is gentler than the inclination of the tip surface 83.

According to this, the processing liquid descending the central portion of the substrate W easily flows to the opening portion 9b along the tip surface 82 and the tip surface 83. If the distances between the protrusion support portions 8a and 8b are the same, when the diameter of the substrate W becomes smaller, the ratio of the treatment liquid that descends from the central portion of the substrate W to the treatment liquid that flows out from the entire opening 9b becomes Since the size is large, such a shape is effective when the diameter of the substrate W is small.

As the angle formed by the protrusion support portion 8a and the side surface of the substrate W, there is a first angle formed by the front end surface 81 and the side surface of the substrate W, and a second angle formed by the front end surface 82 and the side surface of the substrate W. If one of the first angle and the second angle becomes too small, the treatment liquid tends to remain in the region corresponding to the angle. In the example of FIG. 12, the second angle is smaller than the first angle, and if the second angle is too small, the treatment liquid tends to remain in the region between the tip surface 82 and the substrate W. Similarly, as the angle formed by the protrusion support portion 8b and the side surface of the substrate W, the third angle formed by the front end surface 83 and the side surface of the substrate W and the fourth angle formed by the front end surface 84 and the side surface of the substrate W are set. exist. In the example of FIG. 12, the third angle is smaller than the fourth angle, and if the third angle is too small, the treatment liquid tends to remain in the region between the tip surface 83 and the substrate W.

Considering that the shape and position of the pair of protrusion support portions 8 are fixed in the structure of FIG. 12, the second angle between the tip surface 82 and the side surface of the substrate W becomes smaller as the diameter of the substrate W becomes smaller. This is because the smaller the diameter of the substrate W, the more the tangent line of the substrate W at the contact position with the tip surface 82 is along the tip surface 82. When the second angle becomes small, the treatment liquid tends to remain in the region between the side surface of the substrate W and the tip surface 82. Similarly, the third angle between the tip surface 83 and the side surface of the substrate W also becomes smaller as the diameter of the substrate W becomes smaller. When this third angle becomes small, the treatment liquid tends to remain in the region between the side surface of the substrate W and the tip surface 83. Of course, if the inclinations of the tip surfaces 82 and 83 are made steeper, these angles can be increased, but the protrusion support portion 8 is more likely to wear as it becomes an acute angle.

Therefore, when the diameter of the substrate W is small (for example, about 4 inches or less), the protrusion support portions 8a and 8b may have the shape shown in FIG. In this case, since each of the first angle to the fourth angle has a certain size, the amount of the treatment liquid remaining in the region between the side surface of the substrate W and the protrusion support portion 8 is effectively reduced. can do.

<Second modification>
FIG. 14 is a diagram showing another example of the shape of the protrusion support portion 8. In the example of FIG. 14, each tip of the protrusion support portions 8a and 8b has a shape along the hypotenuse of an isosceles triangle in the ZX plane. That is, the tip surfaces 81 and 82 of the protrusion support portion 8a are symmetrical with respect to the YZ plane, and the tip surfaces 83 and 84 of the protrusion support portion 8b are symmetrical with respect to the YZ plane.

Depending on the diameter of the substrate W, it is effective to make the shape of the protrusion support portion 8 into such an isosceles triangle shape so that the treatment liquid may flow evenly on both sides of the tip surface.

Further, when the diameter of the substrate W is large (for example, 12 inches or more), the first angle and the second angle can be increased to the same extent as each other, and the region between the side surface of the substrate W and the protrusion support portion 8a. The amount of the treatment liquid remaining in the treatment liquid can be effectively reduced. Similarly, the third angle and the fourth angle can be increased to the same extent as each other, and the amount of the treatment liquid remaining in the region between the side surface of the substrate W and the protrusion support portion 8b can be effectively reduced. Can be done.

In the substrate processing device 10A, the discharge nozzle 51 does not necessarily have to discharge steam along the horizontal direction or toward the + Z side of the horizontal direction. For example, the discharge nozzle 51 may discharge steam toward the −Z side rather than the horizontal direction. This is because even in this case, the above effect of the protrusion support portion 8 is not impaired.

The various aspects described above can be combined with each other.

2 Storage tank 4 Discharge part 8a First protrusion support part (projection support part)
8b 2nd protrusion support part (projection support part)
10,10A Board processing device 31 First discharge nozzle (discharge nozzle)
51, 51a, 51b 2nd discharge nozzle (discharge nozzle)
61, 61a, 61b 3rd discharge nozzle (discharge nozzle)
81 First tip surface (tip surface)
82 Second tip surface (tip surface)
83 Third tip surface (tip surface)
84 Fourth tip surface (tip surface)
C board containment vessel (carrier)
W board

Claims (12)

It is a board processing device that processes multiple boards at once.
With a storage tank
The first nozzle that supplies the treatment liquid to the storage tank and
It is arranged vertically above the storage tank, and the vapor of the organic solvent is discharged toward the vertically upper side from the horizontal direction, and the organic solvent is placed on the liquid level of the treatment liquid stored in the storage tank. With at least one second ejection nozzle forming a liquid film,
A plate-shaped member arranged vertically above the second discharge nozzle,
It is provided with a discharge unit that discharges the treatment liquid from the storage tank .
The at least one second discharge nozzle is a substrate processing device that discharges the vapor of the organic solvent toward the plate-shaped member . The substrate processing apparatus according to claim 1.
The at least one second ejection nozzle includes a pair of second ejection nozzles arranged at positions separated from each other in the horizontal direction.
A substrate processing device in which one of the pair of second discharge nozzles discharges the vapor of the organic solvent toward the other. The substrate processing apparatus according to claim 2.
A substrate processing apparatus in which the angles of the organic solvent vapor discharged from the pair of second discharge nozzles with respect to the horizontal plane are different from each other. The substrate processing apparatus according to any one of claims 1 to 3 .
A substrate processing apparatus further comprising a heating unit for heating the vapor of the organic solvent to 70 ° C. or higher. The substrate processing apparatus according to any one of claims 1 to 4 .
A substrate processing apparatus further provided with a third ejection nozzle arranged between the storage tank and the at least one second ejection nozzle in the vertical direction and ejecting a gas for drying the substrate toward the plurality of substrates. .. The substrate processing apparatus according to any one of claims 1 to 5 .
Further, a first protrusion support portion and a second protrusion support portion protruding vertically upward from the bottom of the storage tank are provided.
The plurality of substrates are immersed in the treatment liquid of the storage tank in a state of being stored in the substrate containment vessel in an upright posture.
The internal space of the board containment vessel in which the plurality of boards are housed is open both on the vertically upper side and the vertically lower side.
The tip of the first protrusion support portion and the tip of the second protrusion support portion each come into contact with the side surfaces of the plurality of substrates at the opening on the vertically lower side of the substrate containment vessel, and the plurality of substrates are stored in the substrate. A substrate processing device that floats and supports from the containment vessel. The substrate processing apparatus according to claim 6 .
A substrate processing apparatus having a tapered shape in which the tip portions of the first protrusion support portion and the second protrusion support portion taper toward the vertically upper side. The substrate processing apparatus according to claim 7 .
The tip of the first protrusion support portion has a first tip surface and a second tip surface, and has a first tip surface.
The second tip surface is a surface on the side of the second protrusion support portion with respect to the first tip surface.
The tip of the second protrusion support portion has a third tip surface and a fourth tip surface, and has a third tip surface.
The third tip surface is a surface on the side of the first protrusion support portion with respect to the fourth tip surface.
The first tip surface is along the vertical direction with respect to the second tip surface.
A substrate processing apparatus in which the fourth tip surface is along a vertical direction with respect to the third tip surface. The substrate processing apparatus according to claim 8 .
The tip of the first protrusion support portion has a first tip surface and a second tip surface, and has a first tip surface.
The second tip surface is a surface on the side of the second protrusion support portion with respect to the first tip surface.
The tip of the second protrusion support portion has a third tip surface and a fourth tip surface, and has a third tip surface.
The third tip surface is a surface on the side of the first protrusion support portion with respect to the fourth tip surface.
The second tip surface is along the vertical direction with respect to the first tip surface.
A substrate processing apparatus in which the third tip surface is along a vertical direction with respect to the fourth tip surface. The substrate processing apparatus according to claim 8 .
A substrate processing apparatus in which the tips of the first protrusion support portion and the second protrusion support portion each have a shape along the hypotenuse of an isosceles triangle. It is a board processing device that processes multiple boards at once.
With a storage tank
The first nozzle that supplies the treatment liquid to the storage tank and
The treatment liquid stored in the storage tank is arranged vertically above the storage tank, and the vapor of the organic solvent is discharged along the horizontal direction or toward the vertically upper side than the horizontal direction. A pair of second ejection nozzles that form a liquid film of the organic solvent on the liquid surface,
With a discharge unit that discharges the treatment liquid from the storage tank
Equipped with
A substrate processing apparatus in which the angles of the organic solvent vapor discharged from the pair of second discharge nozzles with respect to the horizontal plane are different from each other. It is a board processing method that processes multiple boards at once.
The process of immersing multiple substrates in the treatment liquid stored in the storage tank in an upright position, and
The discharge nozzle discharges the vapor of the organic solvent into the upper space of the storage tank toward the plate-shaped member arranged vertically above the discharge nozzle and vertically above the discharge nozzle . The step of forming a liquid film of the organic solvent on the liquid surface of the treatment liquid stored in the storage tank, and
A substrate processing method comprising a step of discharging a treatment liquid from the storage tank.

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