JP6995530B2 - A molding device for molding a composition on a substrate using a mold and a method for manufacturing an article. - Google Patents

A molding device for molding a composition on a substrate using a mold and a method for manufacturing an article. Download PDF

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JP6995530B2
JP6995530B2 JP2017164417A JP2017164417A JP6995530B2 JP 6995530 B2 JP6995530 B2 JP 6995530B2 JP 2017164417 A JP2017164417 A JP 2017164417A JP 2017164417 A JP2017164417 A JP 2017164417A JP 6995530 B2 JP6995530 B2 JP 6995530B2
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JP2019046819A (en
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節男 吉田
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Canon Inc
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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0002—Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70758—Drive means, e.g. actuators, motors for long- or short-stroke modules or fine or coarse driving
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70991—Connection with other apparatus, e.g. multiple exposure stations, particular arrangement of exposure apparatus and pre-exposure and/or post-exposure apparatus; Shared apparatus, e.g. having shared radiation source, shared mask or workpiece stage, shared base-plate; Utilities, e.g. cable, pipe or wireless arrangements for data, power, fluids or vacuum
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment

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Description

本発明は、型を用いて基板上の組成物を成形する成形装置及び物品の製造方法に関する。 The present invention relates to a molding apparatus for molding a composition on a substrate using a mold and a method for manufacturing an article.

インプリント装置は、基板の上に配置されたインプリント材（硬化性組成物）に型を接触させ該インプリント材を硬化させることによって該基板の上にインプリント材の硬化物からなるパターンを形成する。インプリント装置では、基板上で硬化させたインプリント材から型を引き離す離型の際、型と硬化したインプリント材との界面（接触部）に大きな引き剥がし力が印加される。この力によって、形成されるパターンの歪みを引き起こす場合があり、これがパターンの欠陥となり得る。 The imprint device brings a mold into contact with an imprint material (curable composition) arranged on a substrate and cures the imprint material to form a pattern consisting of a cured product of the imprint material on the substrate. Form. In the imprint device, when the mold is released from the imprint material cured on the substrate, a large peeling force is applied to the interface (contact portion) between the mold and the cured imprint material. This force can cause distortion of the formed pattern, which can be a defect in the pattern.

特許文献１では、離型の際、基板保持部であるチャックの吸着圧力を弱めることにより、型を引き剥がすときに基板をチャックから浮上させる。これにより、型と硬化したインプリント材との界面に生じる力を低減し、パターンの歪みによる欠陥を減少させている。 In Patent Document 1, the substrate is lifted from the chuck when the mold is peeled off by weakening the suction pressure of the chuck which is the substrate holding portion at the time of mold release. This reduces the force generated at the interface between the mold and the cured imprint material and reduces defects due to pattern distortion.

また、特許文献２では、離型の際、型および基板の少なくとも一方を基板面に平行な平面内のチルト軸回りでチルトさせ、チルト軸の方向を連続的又は間欠的に変更することによりチルトする方向を変化させて、離型時の離型力を低減している。 Further, in Patent Document 2, at the time of mold release, at least one of the mold and the substrate is tilted around the tilt axis in a plane parallel to the substrate surface, and the direction of the tilt axis is continuously or intermittently changed to tilt. The mold release force at the time of mold release is reduced by changing the direction of mold release.

米国特許出願公開第２００６／０１７２０３１号明細書U.S. Patent Application Publication No. 2006/0172031 特許第５６６９３７７号公報Japanese Patent No. 5669377

半導体デバイスや撮像素子、表示パネルなどの物品の製造にインプリント方式を適用する場合、できるだけ大きい面積を一括してインプリントすることにより、スループットを向上させることができる。この場合、型とインプリント材が接する面積は大きくなる。大きい面積を一括してインプリントする場合、離型時には大きい面積の型をインプリント材から引き離すことになる。 When the imprint method is applied to the manufacture of articles such as semiconductor devices, image sensors, and display panels, the throughput can be improved by imprinting as large an area as possible at once. In this case, the area where the mold and the imprint material come into contact with each other becomes large. When imprinting a large area at once, the mold with a large area is separated from the imprint material at the time of mold release.

型と基板を基板面の垂直方向に引き離して離型する場合、剥離は、基板のショット領域の外周から中央方向へと進行して行く。この場合、概ね未剥離領域がショット領域の外周に接する楕円形状となるとき、剥離しつつある外縁部分が最も大きくなるため、型、あるいは、基板にかかる力の総和（離型力）が最大となる。従って、ショット領域の面積が大きくなるほど、離型力は大きくなり、基板上に形成されたインプリント材のパターンに欠陥が生じるという問題が生じ易くなる。 When the mold and the substrate are separated from each other in the direction perpendicular to the substrate surface to release the mold, the peeling proceeds from the outer periphery of the shot region of the substrate toward the center. In this case, when the unpeeled region has an elliptical shape in contact with the outer periphery of the shot region, the outer edge portion being peeled is the largest, so that the total force applied to the mold or the substrate (release force) is the maximum. Become. Therefore, as the area of the shot region becomes larger, the mold release force becomes larger, and the problem that a defect occurs in the pattern of the imprint material formed on the substrate is likely to occur.

また、特許文献２による離型方法では、離型中に型および基板の少なくとも一方をチルトさせるため、離型力を十分に低減するためにチルト量を大きくすると、型の端部と基板（硬化性組成物）が接触する可能性があり、基板面に欠陥が生じうる。 Further, in the mold release method according to Patent Document 2, at least one of the mold and the substrate is tilted during the mold release. Therefore, when the tilt amount is increased in order to sufficiently reduce the mold release force, the end of the mold and the substrate (curing). (Sex composition) may come into contact and defects may occur on the substrate surface.

そこで、本発明は、型と基板を離す際にかかる力を低減しつつ、基板上の欠陥を低減することを目的とする。 Therefore, an object of the present invention is to reduce defects on the substrate while reducing the force applied when the mold and the substrate are separated from each other.

上記課題を解決する本発明の一側面としての成形装置は、型を用いて基板上の組成物を成形する成形装置であって、型を保持する型保持部と、基板を保持する基板保持部と、型と組成物を接触させて組成物を成形した後に型と組成物を離す第１方向における、前記型保持部及び前記基板保持部の少なくとも一方の移動を行う第１駆動部と、前記第１方向に対して垂直な方向における前記型保持部及び前記基板保持部の少なくとも一方の移動を行う第２駆動部と、を有し、型と組成物を離すときに、前記第２駆動部によって前記第１方向に対して垂直な第２方向への移動と、前記第１方向に対して垂直であって前記第２方向に交差する第３方向への移動と、を行うものであり、前記第２駆動部は、前記第１方向に平行な軸の回りに、前記型保持部及び前記基板保持部の少なくとも一方を旋回させる、および前記第１方向に対して垂直な方向において前記第２駆動部による移動の軌跡が楕円状の軌跡を含むように、前記型保持部及び前記基板保持部の少なくとも一方を移動させる、の少なくともいずれか一方を行うことを特徴とする。 The molding apparatus as one aspect of the present invention for solving the above problems is a molding apparatus for molding a composition on a substrate using a mold, and is a mold holding portion for holding the mold and a substrate holding portion for holding the substrate. A first driving unit that moves at least one of the mold holding portion and the substrate holding portion in the first direction in which the mold and the composition are brought into contact with each other to form the composition and then the mold and the composition are separated from each other. It has a second drive unit that moves at least one of the mold holder and the substrate holder in a direction perpendicular to the first direction, and when the mold and the composition are separated, the second drive unit is provided. The movement in the second direction perpendicular to the first direction and the movement in the third direction perpendicular to the first direction and intersecting the second direction are performed . The second drive unit swivels at least one of the mold holder and the substrate holder around an axis parallel to the first direction, and the second in a direction perpendicular to the first direction. It is characterized in that at least one of the mold holding portion and the substrate holding portion is moved so that the locus of movement by the driving unit includes an elliptical locus .

本発明によれば、型と基板を離す際にかかる力を低減しつつ、基板上の欠陥を低減することができる。 According to the present invention, it is possible to reduce defects on the substrate while reducing the force applied when the mold and the substrate are separated from each other.

第１実施形態におけるインプリント装置の構成を示す図である。It is a figure which shows the structure of the imprint apparatus in 1st Embodiment. 第１実施形態における離型動作を説明する図である。It is a figure explaining the mold release operation in 1st Embodiment. 実施形態における離型の進行状態を示す図である。It is a figure which shows the progress state of the mold release in an embodiment. 第２実施形態における離型動作を説明する図である。It is a figure explaining the mold release operation in 2nd Embodiment.

以下、図面を参照して本発明の実施形態について詳細に説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.

＜第１実施形態＞
まず、第１実施形態に係るインプリント装置の概要について説明する。インプリント装置は、基板上に供給された硬化性組成物を型と接触させ、硬化性組成物に硬化用のエネルギーを与えることにより、型の凹凸パターンが転写された硬化物のパターンを形成する装置である。 <First Embodiment>
First, an outline of the imprint device according to the first embodiment will be described. The imprint device brings the curable composition supplied on the substrate into contact with the mold and applies energy for curing to the curable composition to form a pattern of the cured product to which the uneven pattern of the mold is transferred. It is a device.

硬化性組成物は、硬化用のエネルギーが与えられることにより硬化する物（未硬化状態の樹脂と呼ぶこともある）である。硬化用のエネルギーとしては、電磁波、熱等が用いられうる。電磁波は、例えば、その波長が１０ｎｍ以上１ｍｍ以下の範囲から選択される光、例えば、赤外線、可視光線、紫外線などでありうる。硬化性組成物は、光の照射により、あるいは、加熱により硬化する組成物でありうる。これらのうち、光の照射により硬化する光硬化性組成物は、少なくとも重合性化合物と光重合開始剤とを含有し、必要に応じて非重合性化合物または溶剤を更に含有してもよい。非重合性化合物は、増感剤、水素供与体、内添型離型剤、界面活性剤、酸化防止剤、ポリマー成分などの群から選択される少なくとも一種である。硬化性組成物は、硬化性組成物供給装置（不図示）により、液滴状、或いは複数の液滴が繋がってできた島状又は膜状となって基板上に配置されうる。硬化性組成物の粘度（２５℃における粘度）は、例えば、１ｍＰａ・ｓ以上１００ｍＰａ・ｓ以下でありうる。基板の材料としては、例えば、シリコン、ガラス、セラミックス、金属、樹脂等が用いられうる。必要に応じて、基板の表面に、基板とは別の材料からなる部材が設けられてもよい。基板は、例えば、シリコン基板、化合物半導体基板、石英ガラスである。 The curable composition is a substance that is cured by being given energy for curing (sometimes referred to as an uncured resin). As the energy for curing, electromagnetic waves, heat and the like can be used. The electromagnetic wave may be, for example, light selected from a wavelength range of 10 nm or more and 1 mm or less, for example, infrared rays, visible rays, ultraviolet rays, and the like. The curable composition can be a composition that cures by irradiation with light or by heating. Of these, the photocurable composition that is cured by irradiation with light contains at least a polymerizable compound and a photopolymerization initiator, and may further contain a non-polymerizable compound or a solvent, if necessary. The non-polymerizable compound is at least one selected from the group of sensitizers, hydrogen donors, internal release mold release agents, surfactants, antioxidants, polymer components and the like. The curable composition can be arranged on the substrate in the form of droplets or islands or films formed by connecting a plurality of droplets by a curable composition supply device (not shown). The viscosity of the curable composition (viscosity at 25 ° C.) can be, for example, 1 mPa · s or more and 100 mPa · s or less. As the material of the substrate, for example, silicon, glass, ceramics, metal, resin and the like can be used. If necessary, a member made of a material different from the substrate may be provided on the surface of the substrate. The substrate is, for example, a silicon substrate, a compound semiconductor substrate, or quartz glass.

図１は、本実施形態におけるインプリント装置１の構成を示す図である。本実施形態において、インプリント装置１は、紫外線の照射によって硬化性組成物（インプリント材）を硬化させる光硬化法を採用するが、これに限定されるものではなく、例えば入熱によって硬化性組成物を硬化させる熱硬化法を採用することもできる。なお、以下の各図においては、型（モールド、テンプレートともいう）に対する紫外線の照射軸と平行な方向にＸＹＺ座標系におけるＺ軸をとり、Ｚ軸に垂直な平面内で互いに直交する方向にＸ軸およびＹ軸をとるものとする。 FIG. 1 is a diagram showing a configuration of an imprint device 1 according to the present embodiment. In the present embodiment, the imprint device 1 employs a photocuring method in which a curable composition (imprint material) is cured by irradiation with ultraviolet rays, but the present invention is not limited to this, and is not limited to this, for example, curability by heat input. A thermosetting method for curing the composition can also be adopted. In each of the following figures, the Z axis in the XYZ coordinate system is taken in the direction parallel to the irradiation axis of ultraviolet rays for the mold (also referred to as mold or template), and X is taken in the direction orthogonal to each other in the plane perpendicular to the Z axis. It shall take the axis and the Y axis.

インプリント装置１は、照明系ユニット２と、型３を保持するインプリントヘッド４と、基板５を保持して移動可能な基板ステージ６と、硬化性組成物１０を供給するディスペンサ７と、制御部８を備える。照明系ユニット２、インプリントヘッド４、ディスペンサ７は、構造体１２によって支持されている。 The imprint device 1 controls the lighting system unit 2, the imprint head 4 that holds the mold 3, the substrate stage 6 that holds the substrate 5 and is movable, and the dispenser 7 that supplies the curable composition 10. A unit 8 is provided. The lighting system unit 2, the imprint head 4, and the dispenser 7 are supported by the structure 12.

照明系ユニット２は、インプリント処理の際に、型３に対して紫外線（紫外光）を照射する。照明系ユニット２は、光源２０と、光源２０から射出された紫外線を、硬化性組成物１０への照射に適切な光に調整するための照明光学系２１とを含む。光源２０としては、例えば、紫外線を発生するハロゲンランプが使用されうる。照明光学系２１は、レンズ等の光学素子、開口が設けられたアパーチャ、照射及び遮光を切り替えるシャッター等を含みうる。 The lighting system unit 2 irradiates the mold 3 with ultraviolet rays (ultraviolet light) during the imprint processing. The lighting system unit 2 includes a light source 20 and an illumination optical system 21 for adjusting the ultraviolet rays emitted from the light source 20 to light suitable for irradiating the curable composition 10. As the light source 20, for example, a halogen lamp that generates ultraviolet rays can be used. The illumination optical system 21 may include an optical element such as a lens, an aperture provided with an aperture, a shutter for switching between irradiation and shading, and the like.

型３は、例えば外形が概略矩形であり、例えば、デバイスの回路のパターン等の凹凸パターンが３次元状に形成されたメサ部２２を有する。なお、凹凸パターンの表面は、基板５の表面との密着性を保つために、高平面度に加工されている。型３の材質は、石英ガラス等の紫外線を透過させることが可能な材料である。 The mold 3 has, for example, a substantially rectangular outer shape, and has, for example, a mesa portion 22 in which a concavo-convex pattern such as a circuit pattern of a device is formed three-dimensionally. The surface of the uneven pattern is processed to have a high flatness in order to maintain adhesion with the surface of the substrate 5. The material of the mold 3 is a material such as quartz glass that can transmit ultraviolet rays.

インプリントヘッド４は、形状補正機構４ａ（倍率補正機構）と、吸着力や静電力により型３を引きつけて保持するモールドチャック４ｂ（型保持部）を有する。また、インプリントヘッド４は、モールドチャック４ｂ（すなわち型３）に対して、ＸＹ平面内でＺ軸に垂直な方向における移動を行う型水平駆動機構４ｃ（第２駆動部）と、Ｚ軸方向における移動を行う型鉛直駆動機構４ｄ（第１駆動部）とを有する。 The imprint head 4 has a shape correction mechanism 4a (magnification correction mechanism) and a mold chuck 4b (mold holding portion) that attracts and holds the mold 3 by suction force or electrostatic force. Further, the imprint head 4 has a mold horizontal drive mechanism 4c (second drive unit) that moves the mold chuck 4b (that is, the mold 3) in a direction perpendicular to the Z axis in the XY plane, and a Z axis direction. It has a type vertical drive mechanism 4d (first drive unit) for moving in the above.

形状補正機構４ａは、型３の外周部の側面の領域に対してそれぞれ対向するように設置された複数のフィンガを有する。これらのフィンガを駆動して型３に圧縮力を加えることにより、型３に形成されたパターン領域が目標形状に補正される。なお、形状補正機構４ａの構成は、これに限定されず、例えば、型３に対して引張力を加える構成としてもよいし、または、モールドチャック４ｂ自体を駆動させることで型３とモールドチャック４ｂとの接触面にせん断力を与える構成としてもよい。 The shape correction mechanism 4a has a plurality of fingers installed so as to face each of the side surface areas of the outer peripheral portion of the mold 3. By driving these fingers and applying a compressive force to the mold 3, the pattern region formed in the mold 3 is corrected to the target shape. The configuration of the shape correction mechanism 4a is not limited to this, and may be, for example, a configuration in which a tensile force is applied to the mold 3, or the mold 3 and the mold chuck 4b are driven by driving the mold chuck 4b itself. It may be configured to apply a shearing force to the contact surface with.

型水平駆動機構４ｃは、モールドチャック４ｂをＺ軸に垂直な任意の方向に並進移動させるように設けられる。型鉛直駆動機構４ｄは、基板５上に供給された硬化性組成物１０に型３を接触させるためや硬化した組成物１０から型を離すために、モールドチャック４ｂをＺ軸方向に並進移動させる。また、型鉛直駆動機構４ｄは、型３をθ方向（Ｚ軸周りの回転方向）における位置を調整する調整機能や、ＸＹ平面に対する型３の傾きを調整するチルト機能も有している。型水平駆動機構４ｃや型鉛直駆動機構４ｄに採用されるアクチュエータとしてはリニアモーターやエアシリンダー等を採用することが可能である。 The mold horizontal drive mechanism 4c is provided so as to translate the mold chuck 4b in an arbitrary direction perpendicular to the Z axis. The mold vertical drive mechanism 4d translates the mold chuck 4b in the Z-axis direction in order to bring the mold 3 into contact with the curable composition 10 supplied on the substrate 5 and to separate the mold from the cured composition 10. .. Further, the mold vertical drive mechanism 4d also has an adjusting function for adjusting the position of the mold 3 in the θ direction (rotational direction around the Z axis) and a tilt function for adjusting the inclination of the mold 3 with respect to the XY plane. As the actuator used in the type horizontal drive mechanism 4c and the type vertical drive mechanism 4d, a linear motor, an air cylinder, or the like can be adopted.

基板ステージ６および基板チャック２５は、基板を保持して移動する基板保持部として機能する。基板チャック２５（吸着部）は、基板ステージ６上に固定されている。基板チャック２５の上面には多数の孔が設けられており、これらの孔には、真空装置などの吸着圧調整機構６ｂが接続され、孔を通して基板チャック２５上面の気体を排出するように構成されている。基板５は裏面が基板チャック２５の上面と接触するように配置され、前記真空装置により基板５の裏面と基板チャック２５上面との間の気体を排出することにより、基板５は基板チャック２５に吸着保持される。 The board stage 6 and the board chuck 25 function as a board holding portion for holding and moving the board. The substrate chuck 25 (suction portion) is fixed on the substrate stage 6. A large number of holes are provided on the upper surface of the substrate chuck 25, and a suction pressure adjusting mechanism 6b such as a vacuum device is connected to these holes so as to discharge the gas on the upper surface of the substrate chuck 25 through the holes. ing. The substrate 5 is arranged so that the back surface is in contact with the upper surface of the substrate chuck 25, and the substrate 5 is adsorbed on the substrate chuck 25 by discharging the gas between the back surface of the substrate 5 and the upper surface of the substrate chuck 25 by the vacuum device. Be retained.

インプリント装置１は、定盤３２上で、基板ステージ６（すなわち基板５）をＸ方向及びＹ方向における駆動（位置決め）を行う基板駆動機構６ａを有する。基板ステージ６のＸ方向およびＹ方向における位置は計測器３１によって計測されうる。基板駆動機構６ａは更に、Ｚ軸方向における位置およびθ方向（Ｚ軸周りの回転方向）における位置を調整する調整機能や、ＸＹ平面に対する基板５の傾きを調整するチルト機能も有していてもよい。 The imprint device 1 has a substrate drive mechanism 6a that drives (positions) the substrate stage 6 (that is, the substrate 5) in the X direction and the Y direction on the surface plate 32. The positions of the substrate stage 6 in the X and Y directions can be measured by the measuring instrument 31. Even if the substrate drive mechanism 6a further has an adjustment function for adjusting the position in the Z-axis direction and the position in the θ direction (rotational direction around the Z-axis) and a tilt function for adjusting the inclination of the substrate 5 with respect to the XY plane. good.

計測器３１は、例えば構造体１２によって支持された干渉計でありうる。計測器３１は、例えば、基板チャック２５に向けて計測光を照射し、基板チャック２５の端面に設けられた計測用ミラー３０で反射された計測光を検出することで、基板ステージ６の位置を計測する。なお、図１では、計測器３１が１つしか示されていないが、計測器３１は、少なくとも基板ステージ６のＸ位置及びＹ位置、回転量およびチルト量が計測できる数だけ有しうる。 The measuring instrument 31 can be, for example, an interferometer supported by the structure 12. For example, the measuring instrument 31 irradiates the substrate chuck 25 with the measurement light and detects the measurement light reflected by the measurement mirror 30 provided on the end surface of the substrate chuck 25 to determine the position of the substrate stage 6. measure. Although only one measuring instrument 31 is shown in FIG. 1, the measuring instrument 31 may have at least a number that can measure the X position and the Y position, the rotation amount, and the tilt amount of the substrate stage 6.

インプリント装置１は、不図示のアライメント光学系によって、基板５または基板チャック２５に形成されたアライメントマークを観察して位置ずれ情報を取得することができる。また、インプリント装置１は、高さ測定装置２９によって、基板５上面までの距離を測定することができる。型３のパターン面と高さ測定装置２９との相対的な高さは事前に計測されているため、高さ測定装置２９によって測定された距離から、基板５上面から型３のパターン面までの距離は計算により求められる。つまり、基板５と型３との距離を測定することができる。 The imprint device 1 can acquire the misalignment information by observing the alignment mark formed on the substrate 5 or the substrate chuck 25 by an alignment optical system (not shown). Further, the imprint device 1 can measure the distance to the upper surface of the substrate 5 by the height measuring device 29. Since the relative height between the pattern surface of the mold 3 and the height measuring device 29 is measured in advance, the distance measured by the height measuring device 29 is from the upper surface of the substrate 5 to the pattern surface of the mold 3. The distance is calculated. That is, the distance between the substrate 5 and the mold 3 can be measured.

ディスペンサ７は基板５上に硬化性組成物１０を供給する。その後、型３を型鉛直駆動機構４ｄにより下降させて基板５上の硬化性組成物１０と接触させると、硬化性組成物１０は型３のパターンの溝部に流入する。光源２０から発せられた紫外線は、照明光学系２１を介して型３を通過し、基板５上の硬化性組成物１０に入射する。こうして紫外線が照射された硬化性組成物１０は硬化する。硬化した組成物１０には、型３のパターンの反転パターンが形成されることとなる。組成物１０が硬化した後、型３を型鉛直駆動機構４ｄによりＺ方向に上昇させることにより、硬化した組成物１０から型３が引き離される（離型）。 The dispenser 7 supplies the curable composition 10 onto the substrate 5. After that, when the mold 3 is lowered by the mold vertical drive mechanism 4d and brought into contact with the curable composition 10 on the substrate 5, the curable composition 10 flows into the groove portion of the pattern of the mold 3. The ultraviolet rays emitted from the light source 20 pass through the mold 3 via the illumination optical system 21 and are incident on the curable composition 10 on the substrate 5. The curable composition 10 thus irradiated with ultraviolet rays is cured. An inverted pattern of the pattern of the mold 3 is formed on the cured composition 10. After the composition 10 is cured, the mold 3 is pulled away from the cured composition 10 by raising the mold 3 in the Z direction by the mold vertical drive mechanism 4d (mold release).

なお、本実施形態のインプリント装置１では、ほぼ固定された基板５上の硬化性組成物に対してインプリントヘッド４を駆動して型３と組成物１０を接触させる構成としているが、これとは反対の構成もありうる。すなわち、固定された型３に対して基板ステージ６を駆動して基板５上の硬化性組成物１０に型３を接触させる構成としてもよい。あるいは、インプリントヘッド４（型鉛直駆動機構４ｄ）と基板ステージ６をそれぞれ上下に駆動させる構成であってもよい。すなわち、型３と基板５との間隔を相対的に変化させる構成であればよい。 The imprint device 1 of the present embodiment is configured to drive the imprint head 4 against the curable composition on the substantially fixed substrate 5 to bring the mold 3 and the composition 10 into contact with each other. The opposite configuration is also possible. That is, the substrate stage 6 may be driven with respect to the fixed mold 3 to bring the mold 3 into contact with the curable composition 10 on the substrate 5. Alternatively, the imprint head 4 (type vertical drive mechanism 4d) and the substrate stage 6 may be driven up and down, respectively. That is, the configuration may be such that the distance between the mold 3 and the substrate 5 is relatively changed.

制御部８は、ＣＰＵ８ａやメモリ８ｂ等を含み、インプリント装置１の各部を統括的に制御する。制御部８は、例えば、光源２０、型鉛直駆動機構４ｄ、型水平駆動機構４ｃ、基板駆動機構６ａ、吸着圧調整機構６ｂ、ディスペンサ７、高さ測定装置２９、計測器３１などを制御する。 The control unit 8 includes the CPU 8a, the memory 8b, and the like, and controls each unit of the imprint device 1 in an integrated manner. The control unit 8 controls, for example, a light source 20, a type vertical drive mechanism 4d, a type horizontal drive mechanism 4c, a substrate drive mechanism 6a, an adsorption pressure adjusting mechanism 6b, a dispenser 7, a height measuring device 29, a measuring instrument 31, and the like.

次に、図２を用いて離型時の挙動について説明する。図２は型３、基板５、基板チャック２５等の模式図であり、１０は硬化性組成物を示している。なお、モールドチャック４ｂ、型水平駆動機構４ｃ、型鉛直駆動機構４ｄ、基板ステージ６の図示は省略している。 Next, the behavior at the time of mold release will be described with reference to FIG. FIG. 2 is a schematic view of a mold 3, a substrate 5, a substrate chuck 25, and the like, and FIG. 10 shows a curable composition. The mold chuck 4b, the mold horizontal drive mechanism 4c, the mold vertical drive mechanism 4d, and the substrate stage 6 are not shown.

型３のメサ部２２には、基板５の１つのショット領域の大きさに相当するパターンが形成されている。本実施形態における型３では、メサ部２２が形成された領域（図２の中央部分）の厚みが、モールドチャック４ｂによって保持される部分（図２の周辺部分）よりも薄くされている。つまり、型３の上部とモールドチャック４ｂとの間には、密閉空間であるコアアウト部３ｈが形成されている。制御部８からの制御指示で、不図示の圧力調整部によってコアアウト部３ｈの空気圧が調整されうる。メサ部２２が形成された領域は、コアアウト部３ｈの空気圧が調整されることで変形する。 A pattern corresponding to the size of one shot region of the substrate 5 is formed on the mesa portion 22 of the mold 3. In the mold 3 of the present embodiment, the thickness of the region where the mesa portion 22 is formed (central portion in FIG. 2) is thinner than the portion held by the mold chuck 4b (peripheral portion in FIG. 2). That is, a core-out portion 3h, which is a closed space, is formed between the upper portion of the mold 3 and the mold chuck 4b. According to a control instruction from the control unit 8, the air pressure of the core-out unit 3h can be adjusted by a pressure adjusting unit (not shown). The region where the mesa portion 22 is formed is deformed by adjusting the air pressure of the core-out portion 3h.

メサ部２２を基板５のショット領域上に供給された硬化性組成物１０に接触させるとき、圧力調整部によりコアアウト部３ｈ内を加圧して、型３（メサ部２２）を基板５に対して凸状に変形させる。その後、型鉛直駆動機構４ｄによりモールドチャック４ｂ（型３）を－Ｚ方向へ移動させて、型３を基板５に接近させる。そして、メサ部２２が基板５上の硬化性組成物１０に接触するのに応じて、コアアウト部３ｈ内の圧力を下げ、型３を平面に戻していく。これにより、型３のパターンと硬化性組成物１０との間の気体が外側へ順次押し出され、型３のパターンと硬化性組成物１０との間に気泡が混入することが低減される。その後、光源２０から基板５上の硬化性組成物１０に紫外線を照射することで硬化性組成物１０が硬化される。この状態が図２（ａ）に示されている。 When the mesa portion 22 is brought into contact with the curable composition 10 supplied on the shot region of the substrate 5, the inside of the core-out portion 3h is pressurized by the pressure adjusting portion, and the mold 3 (mesa portion 22) is applied to the substrate 5. Deform into a convex shape. After that, the mold chuck 4b (mold 3) is moved in the −Z direction by the mold vertical drive mechanism 4d to bring the mold 3 closer to the substrate 5. Then, as the mesa portion 22 comes into contact with the curable composition 10 on the substrate 5, the pressure in the core-out portion 3h is reduced to return the mold 3 to a flat surface. As a result, the gas between the pattern of the mold 3 and the curable composition 10 is sequentially pushed outward, and the mixing of air bubbles between the pattern of the mold 3 and the curable composition 10 is reduced. Then, the curable composition 10 is cured by irradiating the curable composition 10 on the substrate 5 with ultraviolet rays from the light source 20. This state is shown in FIG. 2 (a).

その後、型鉛直駆動機構４ｄにより、硬化した組成物１０から型３を引き離す離型が行われる。離型は、型鉛直駆動機構４ｄによりモールドチャック４ｂ（型３）を＋Ｚ方向に移動させることによって行われる。このとき、制御部８は、型３と組成物１０が接触している領域（ショット領域）において、基板チャック２５が基板５の裏面を吸着する吸着力を弱めるように、吸着圧調整機構６ｂを制御する。基板チャック２５は、吸着領域として複数の部分領域を有し、互いに独立して吸着圧を調整することができる。そのため、型３と組成物１０が接触している領域とは異なる領域では吸着力を維持することができる。つまり、型と組成物が接触している領域に対応する領域（第１領域）における吸着力を、第１領域とは異なる領域における吸着力よりも弱めた状態で型と組成物を離すことができる。型３と組成物１０が接触している位置の吸着領域の吸着力を弱めることにより、図２（ｂ）のように、基板５のショット領域およびその近傍は基板チャック２５から浮き上がる。これにより、型３と組成物１０との界面に生じる応力が低減し、組成物１０のパターンの歪みによる欠陥を減少させることができる。 After that, the mold 3 is released from the cured composition 10 by the mold vertical drive mechanism 4d. The mold release is performed by moving the mold chuck 4b (mold 3) in the + Z direction by the mold vertical drive mechanism 4d. At this time, the control unit 8 sets the suction pressure adjusting mechanism 6b so as to weaken the suction force by which the substrate chuck 25 adsorbs the back surface of the substrate 5 in the region (shot region) where the mold 3 and the composition 10 are in contact with each other. Control. The substrate chuck 25 has a plurality of partial regions as suction regions, and the suction pressure can be adjusted independently of each other. Therefore, the adsorption force can be maintained in a region different from the region where the mold 3 and the composition 10 are in contact with each other. That is, the mold and the composition can be separated from each other in a state where the suction force in the region corresponding to the region where the mold and the composition are in contact (first region) is weaker than the suction force in the region different from the first region. can. By weakening the suction force of the suction region at the position where the mold 3 and the composition 10 are in contact with each other, the shot region of the substrate 5 and its vicinity are lifted from the substrate chuck 25 as shown in FIG. 2 (b). As a result, the stress generated at the interface between the mold 3 and the composition 10 can be reduced, and the defects due to the distortion of the pattern of the composition 10 can be reduced.

次に、本実施形態では、離型動作の途中で、基板５のショット領域近傍が基板チャック２５から浮き上がった後、型水平駆動機構４ｃによりＺ軸に垂直な方向におけるモールドチャック４ｂ（型３）の移動を行う。図２（ｃ）は型３を＋Ｚ方向に移動させるとともに＋Ｘ方向に移動させた状態を示した図である。図２（ｃ）において、型３と組成物１０の界面のうち、型３が移動された方向（＋Ｘ方向）の側にある界面をＡ、メサ部２２に対して反対側にある界面をＢとする。型３が＋Ｘ方向に移動されると、型３と組成物１０の界面ＡとＢのそれぞれの近傍での基板５の変形形状に差が生じ、型３と組成物１０の界面を引き離す力は、界面Ａよりも界面Ｂの方が大きくなる。そのため、界面Ｂでは界面Ａと比較して、型３が組成物１０から剥離する範囲が大きくなる。 Next, in the present embodiment, after the vicinity of the shot region of the substrate 5 is lifted from the substrate chuck 25 during the mold release operation, the mold chuck 4b (mold 3) in the direction perpendicular to the Z axis is provided by the mold horizontal drive mechanism 4c. To move. FIG. 2C is a diagram showing a state in which the mold 3 is moved in the + Z direction and the + X direction. In FIG. 2C, of the interfaces between the mold 3 and the composition 10, the interface on the side in the direction in which the mold 3 is moved (+ X direction) is A, and the interface on the opposite side to the mesa portion 22 is B. And. When the mold 3 is moved in the + X direction, a difference occurs in the deformed shape of the substrate 5 in the vicinity of the interface A and B of the mold 3 and the composition 10, and the force for pulling the interface between the mold 3 and the composition 10 apart is , Interface B is larger than Interface A. Therefore, at the interface B, the range in which the mold 3 is peeled off from the composition 10 is larger than that at the interface A.

図２（ｄ）は離型時の型３の移動の様子の一例を示した図である。型鉛直駆動機構４ｄ（型３）のＺ方向（第１方向）における変位（移動量）を横軸とし、型水平駆動機構４ｃ（型３）のＸ方向（第２方向）又はＹ方向（第３方向）のそれぞれの方向における変位をそれぞれ縦軸で示している。原点は、型３と組成物１０を離し始めたときの型３の位置を表す。同図によると、型３は移動開始時より＋Ｚ方向に距離Ｚ１だけ移動するまではＸ方向又はＹ方向における移動は行われない。型３がＺ方向の距離Ｚ１に達した後、型３はＸ方向又はＹ方向における移動が開始され、Ｘ方向には振幅ａでＺ駆動量に対する正弦関数、Ｙ方向には振幅ａでＺ駆動量に対する余弦関数で駆動する。すなわち、Ｘ方向又はＹ方向において、型水平駆動機構４ｃ（型３）は半径ａの円状の軌跡で移動しながら＋Ｚ方向に移動する。円軌跡は、Ｘ方向への移動とＹ方向への移動とを含み、Ｚ方向に垂直な方向（ＸＹ平面）において移動方向が変化していることを表す。ここで、Ｘ、Ｙ方向における型と基板の相対的な距離の最大値である振幅ａ、すなわち、Ｘ、Ｙ方向における最大駆動量は、離型動作中一定であってもよい。また、型３と基板５のＺ方向の相対的距離（型鉛直駆動機構４ｄによるＺ方向への駆動量）に応じて振幅ａを変化させてもよい。また、型３と基板５をＺ方向に引き離す速度に応じで振幅ａを変化させてもよい。 FIG. 2D is a diagram showing an example of the movement of the mold 3 at the time of mold release. The horizontal axis is the displacement (movement amount) of the mold vertical drive mechanism 4d (mold 3) in the Z direction (first direction), and the X direction (second direction) or Y direction (second direction) of the mold horizontal drive mechanism 4c (mold 3). The vertical axis shows the displacement in each of the three directions). The origin represents the position of the mold 3 when the mold 3 and the composition 10 begin to separate. According to the figure, the mold 3 does not move in the X direction or the Y direction until it moves by a distance Z1 in the + Z direction from the start of movement. After the mold 3 reaches the distance Z1 in the Z direction, the mold 3 starts moving in the X direction or the Y direction, a sine function with respect to the Z drive amount with the amplitude a in the X direction, and Z drive with the amplitude a in the Y direction. Driven by the cosine function for the quantity. That is, in the X direction or the Y direction, the mold horizontal drive mechanism 4c (mold 3) moves in the + Z direction while moving along a circular locus having a radius a. The circular locus includes movement in the X direction and movement in the Y direction, and represents that the movement direction changes in the direction perpendicular to the Z direction (XY plane). Here, the amplitude a, which is the maximum value of the relative distance between the mold and the substrate in the X and Y directions, that is, the maximum drive amount in the X and Y directions may be constant during the mold removal operation. Further, the amplitude a may be changed according to the relative distance between the mold 3 and the substrate 5 in the Z direction (the amount of drive in the Z direction by the mold vertical drive mechanism 4d). Further, the amplitude a may be changed according to the speed at which the mold 3 and the substrate 5 are separated in the Z direction.

本実施形態による型３と組成物１０との離型の進行状態について説明する。図３は離型途中のショット領域をＺ軸方向上側から見た図である。図３（ａ）は型３をＸ、Ｙ方向に移動せずＺ方向のみに移動させる従来の離型方法の場合を示す。図３（ｂ）は本実施形態による離型方法の場合を示している。同図においてＳは基板５のショット領域、Ｔは型３が組成物１０から既に離型した領域、Ｕは未だ離型していない接触領域を示す。図３中の矢印は離型した領域Ｔが破線の領域から実線の領域へ進行して行く時の方向を示す。 The progress of mold release between the mold 3 and the composition 10 according to the present embodiment will be described. FIG. 3 is a view of the shot region in the middle of mold release as viewed from the upper side in the Z-axis direction. FIG. 3A shows the case of the conventional mold release method in which the mold 3 is moved only in the Z direction without moving in the X and Y directions. FIG. 3B shows the case of the mold release method according to the present embodiment. In the figure, S is a shot region of the substrate 5, T is a region where the mold 3 has already been released from the composition 10, and U is a contact region which has not been released yet. The arrow in FIG. 3 indicates the direction in which the demolded region T travels from the broken line region to the solid line region.

型３をＸ、Ｙ方向に移動させずにＺ方向のみに移動させる従来の離型方法では、型３と組成物１０の剥離はショット領域Ｓの外周から中央に向かって進行する。それに対して、本実施形態による離型方法では、型３をＸ、Ｙ方向において円状の軌跡の移動をさせながらＺ方向に移動させる。これにより、型３および基板５は図２（ｃ）に示した状態になるとともに、界面Ａ、Ｂの位置がショット領域Ｓの中心まわりで連続的に変わる。型３が組成物１０から剥離する範囲が大きい界面Ｂの位置がショット領域Ｓの中心まわりで連続的に変わることにより、図３（ｂ）の矢印のように型３と組成物１０が剥離する領域はショット領域Ｓの外周から内側へ向かって渦巻き状に順に進行する。 In the conventional mold release method in which the mold 3 is moved only in the Z direction without moving in the X and Y directions, the peeling of the mold 3 and the composition 10 proceeds from the outer periphery of the shot region S toward the center. On the other hand, in the mold release method according to the present embodiment, the mold 3 is moved in the Z direction while moving the circular locus in the X and Y directions. As a result, the mold 3 and the substrate 5 are in the state shown in FIG. 2 (c), and the positions of the interfaces A and B are continuously changed around the center of the shot region S. The position of the interface B, which has a large range of peeling from the composition 10 by the mold 3, continuously changes around the center of the shot region S, so that the mold 3 and the composition 10 are peeled off as shown by the arrow in FIG. 3 (b). The region sequentially progresses in a spiral shape from the outer periphery of the shot region S toward the inside.

従来の離型方法により図３（ａ）のように離型が進行する場合、楕円形状の接触領域Ｕの外側の全周が同時に離型して行き、楕円形状の接触領域Ｕの外側全周における離型にかかる力の総和が離型力となる。一方、本実施形態の離型方法によると、図３（ｂ）のように、渦巻き状に離型が進行するので、離型力は型３と組成物１０が剥離する位置近傍の局所的な領域にかかる力の総和となる。従って、従来の離型方法と比較して本実施形態の離型方法によると、組成物１０から同時に剥離される型の領域の面積が小さくなるので、離型力を低減することができる。 When the mold release progresses as shown in FIG. 3A by the conventional mold release method, the entire outer circumference of the elliptical contact region U is simultaneously released from the mold, and the entire outer circumference of the elliptical contact region U is released. The sum of the forces applied to the mold release is the mold release force. On the other hand, according to the mold release method of the present embodiment, as shown in FIG. 3B, the mold release proceeds in a spiral shape, so that the mold release force is local near the position where the mold 3 and the composition 10 are peeled off. It is the sum of the forces applied to the area. Therefore, according to the mold release method of the present embodiment as compared with the conventional mold release method, the area of the mold region simultaneously peeled from the composition 10 is reduced, so that the mold release force can be reduced.

また、従来の離型方法ではショット領域の面積が大きくなるほど、離型初期における接触領域Ｕの楕円の径が大きくなるので離型力が大きくなる。しかし、本実施形態の離型方法によれば、局所的な領域だけで離型力が生じるので、ショット領域の面積が大きくなったとしても離型力の増大を抑えることができる。したがって、本実施形態の離型方法によれば、離型力を低減する効果は大きくなる。 Further, in the conventional mold release method, as the area of the shot region becomes larger, the diameter of the ellipse of the contact region U at the initial stage of mold release becomes larger, so that the mold release force becomes larger. However, according to the mold release method of the present embodiment, since the mold release force is generated only in the local region, it is possible to suppress the increase in the mold release force even if the area of the shot region becomes large. Therefore, according to the mold release method of the present embodiment, the effect of reducing the mold release force is large.

さらに本実施形態では、離型時に型３についてＸ、Ｙ方向における移動とＺ方向における移動を行うので、型３を傾けるだけで離型力を低減する従来技術のように型３の端部が基板５に近づいて接触して基板面を損傷する、という問題は発生し難い。 Further, in the present embodiment, since the mold 3 is moved in the X and Y directions and in the Z direction at the time of mold release, the end portion of the mold 3 is formed as in the conventional technique for reducing the mold release force only by tilting the mold 3. The problem of approaching and contacting the substrate 5 and damaging the substrate surface is unlikely to occur.

以上のように、本実施形態の離型方法によれば、基板のショット領域の面積が大きい場合においても、離型力を低減することができる。 As described above, according to the mold release method of the present embodiment, the mold release force can be reduced even when the area of the shot region of the substrate is large.

なお、本実施形態では、型３として、凹凸パターンを設けた回路パターン転写用の型について述べたが、凹凸パターンがない平面部を有する型（ブランクテンプレート）であってもよい。ブランクテンプレートは、平面部によって基板上の組成物を平坦化するように成形する平坦化装置に用いられる。つまり、本実施形態は、型を用いて基板上の組成物を成形する成形装置に適用することができる。 In the present embodiment, as the mold 3, a mold for transferring a circuit pattern provided with an uneven pattern has been described, but a mold having a flat surface portion without an uneven pattern (blank template) may be used. The blank template is used in a flattening device that forms the composition on the substrate by flattening the flat surface. That is, the present embodiment can be applied to a molding apparatus for molding a composition on a substrate using a mold.

本実施形態において、型水平駆動機構４ｃによる型３のＸ、Ｙ方向における移動については、真円の軌跡で連続的に移動させる場合を説明した。しかし、これに限らず、型水平駆動機構４ｃによってＺ方向に対して垂直な第２方向への移動とＺ方向に対して垂直であって第２方向に交差する方向への移動とを行えばよい。また、移動軌跡は楕円状の軌跡でもよい。また、型３の位置がショット中心まわりで連続的に変化する軌跡、つまり、Ｚ方向に平行な軸の回りに型水平駆動機構４ｃを旋回させてもよい。また、移動も連続的ではなく、停止と移動方向の反転などを含む間欠的な移動など、移動の方向を間欠的に変化させても同様の効果がある。なお、型３をＸ、Ｙ方向において移動させる際、型３をＺ方向にも移動させているので、厳密にはＸＹ平面に沿った移動にはなっていないが、本実施形態ではＸ、Ｙ方向における移動成分について説明している。 In the present embodiment, regarding the movement of the mold 3 in the X and Y directions by the mold horizontal drive mechanism 4c, a case where the mold 3 is continuously moved along a perfect circular locus has been described. However, the present invention is not limited to this, and if the type horizontal drive mechanism 4c is used to move in the second direction perpendicular to the Z direction and to move in the direction perpendicular to the Z direction and intersecting the second direction. good. Further, the movement locus may be an elliptical locus. Further, the mold horizontal drive mechanism 4c may be swiveled around a locus in which the position of the mold 3 continuously changes around the center of the shot, that is, around an axis parallel to the Z direction. Further, the movement is not continuous, and the same effect can be obtained even if the direction of movement is intermittently changed, such as intermittent movement including stop and reversal of the movement direction. When the mold 3 is moved in the X and Y directions, the mold 3 is also moved in the Z direction, so that the movement is not strictly along the XY plane, but in the present embodiment, the movement is not along the X and Y directions. Explains the moving component in the direction.

本実施形態においては、離型時に、インプリントヘッド４に設けた型水平駆動機構４ｃにより型３をＸ、Ｙ方向において移動させるとした。しかし、これに限らず、型水平駆動機構４ｃによる移動は行わず、基板ステージ６の基板駆動機構６ａを用いて基板５をＸ、Ｙ方向において移動させて、型３と基板５を相対的に移動させてもよい。また、型水平駆動機構４ｃと基板駆動機構６ａの両方を駆動させてもよい。 In the present embodiment, it is assumed that the mold 3 is moved in the X and Y directions by the mold horizontal drive mechanism 4c provided on the imprint head 4 at the time of mold release. However, not limited to this, the mold 3 and the substrate 5 are relatively moved by moving the substrate 5 in the X and Y directions using the substrate drive mechanism 6a of the substrate stage 6 without moving by the mold horizontal drive mechanism 4c. You may move it. Further, both the mold horizontal drive mechanism 4c and the substrate drive mechanism 6a may be driven.

また、本実施形態では離型の際に型３と基板５を変形させたが、必ずしも変形させなくてもよい。具体的には、基板型３と組成物１０が接触している位置の吸着領域の吸着力を弱めて離型を行ったが、吸着力を弱めなくても本実施形態の離型方法を適用することができる。また、コアアウト部３ｈの空気圧の調整をしなくて本実施形態の離型方法を適用することができる。 Further, in the present embodiment, the mold 3 and the substrate 5 are deformed at the time of mold release, but the mold 3 and the substrate 5 are not necessarily deformed. Specifically, the mold release method was performed by weakening the suction force in the suction region at the position where the substrate mold 3 and the composition 10 are in contact, but the mold release method of the present embodiment is applied even if the suction force is not weakened. can do. Further, the mold release method of the present embodiment can be applied without adjusting the air pressure of the core-out portion 3h.

＜第２実施形態＞
次に第２実施形態について説明する。本実施形態によるインプリント装置の構成については、図１に示した構成と同じである。また、型３を硬化性組成物１０に押し付け、紫外線を硬化性組成物１０に照射して硬化させるまで（すなわち離型前）の動作、および、図２（ｂ）に示した離型中の動作までは第１実施形態と同じである。 <Second Embodiment>
Next, the second embodiment will be described. The configuration of the imprint device according to this embodiment is the same as the configuration shown in FIG. Further, the operation until the mold 3 is pressed against the curable composition 10 and the curable composition 10 is irradiated with ultraviolet rays to cure (that is, before mold release), and during the mold release shown in FIG. 2 (b). The operation is the same as that of the first embodiment.

本実施形態における離型動作では、図２（ｂ）のように離型動作の途中で基板５の剥離位置近傍が基板チャック２５から浮き上がった後、型鉛直駆動機構４ｄにより型３を＋Ｚ方向に駆動するとともに、型水平駆動機構４ｃにより型３をＸＹ平面内で駆動する。それと同時に図４に示すように、型鉛直駆動機構４ｄ（第３駆動部）により、型３がＸＹ平面内において変位した方向（図４ではＸの＋方向）の型３の端部が基板５に近づくように、ＸＹ平面に対して型３を傾ける。型３の変位は、型３と基板５を離し始めたときの位置からの変位とする。型水平駆動機構４ｃにより型３をＸＹ平面内で駆動させたときに、型３の変位した方向によって傾きの方向を変える。つまり、型鉛直駆動機構４ｄによってＸ、Ｙ方向へ変位させたときの変位に応じて、型鉛直駆動機構４ｄによる傾きの変更を行う。図４に示すように、型３がＸ方向に移動すると共に傾くことにより、型水平駆動機構４ｃにより型３をＸＹ平面内で駆動するのみの第１実施形態と比較して、型３と組成物１０の界面Ｂを引き離す力はさらに大きくなる。 In the mold release operation in the present embodiment, as shown in FIG. 2B, the vicinity of the peeling position of the substrate 5 is lifted from the substrate chuck 25 during the mold release operation, and then the mold 3 is moved in the + Z direction by the mold vertical drive mechanism 4d. In addition to driving, the mold 3 is driven in the XY plane by the mold horizontal drive mechanism 4c. At the same time, as shown in FIG. 4, the end portion of the mold 3 in the direction in which the mold 3 is displaced in the XY plane (in the + direction of X in FIG. 4) due to the vertical drive mechanism 4d (third drive unit) is the substrate 5. Tilt the mold 3 with respect to the XY plane so as to approach. The displacement of the mold 3 is the displacement from the position when the mold 3 and the substrate 5 start to be separated. When the mold 3 is driven in the XY plane by the mold horizontal drive mechanism 4c, the direction of inclination is changed depending on the displacement direction of the mold 3. That is, the inclination is changed by the mold vertical drive mechanism 4d according to the displacement when the mold vertical drive mechanism 4d is displaced in the X and Y directions. As shown in FIG. 4, the mold 3 and the composition are compared with the first embodiment in which the mold 3 is only driven in the XY plane by the mold horizontal drive mechanism 4c by moving and tilting in the X direction. The force that pulls the interface B of the object 10 apart becomes even greater.

本実施形態においても、型３のＸＹ平面内の移動は第１実施形態と同様であるが、それとともに、型３のＸＹ平面内において変位した方向側の型３の端部が常に基板５に近づく方向に傾くように型３の傾きを制御する。これにより、第１実施形態と同様に、離型はショット領域の外周から内側へ渦巻き状に進行し、従来の離型方法と比較して離型力を低減することができる。それに加えて、型３と組成物１０の界面Ｂを引き離す力を第１実施形態よりも大きくできるので、第１実施形態よりもショット領域全面を離型するまでの時間を短縮でき、インプリント装置にスループットを向上させることができる。 Also in this embodiment, the movement of the mold 3 in the XY plane is the same as that in the first embodiment, but at the same time, the end portion of the mold 3 on the displaced direction side in the XY plane of the mold 3 is always on the substrate 5. The inclination of the mold 3 is controlled so as to incline in the approaching direction. As a result, as in the first embodiment, the mold release proceeds in a spiral shape from the outer periphery of the shot region to the inside, and the mold release force can be reduced as compared with the conventional mold release method. In addition, since the force for separating the interface B between the mold 3 and the composition 10 can be made larger than that in the first embodiment, the time required to release the entire shot region can be shortened as compared with the first embodiment, and the imprint device can be used. Throughput can be improved.

他方、本実施形態では離型時に型３のＸＹ平面内での駆動と傾き駆動を同時に行うことで、離型時に型３の傾きのみを行う離型方法と比較して型３の傾き量を減らすことができ、型３と基板５が接触する問題が発生し難くすることができる。 On the other hand, in the present embodiment, by simultaneously driving the mold 3 in the XY plane at the time of mold release and tilting the mold 3, the amount of tilt of the mold 3 is reduced as compared with the mold release method in which only the mold 3 is tilted at the time of mold release. It can be reduced, and the problem of contact between the mold 3 and the substrate 5 can be reduced.

なお、第２実施形態においても、型３のＸＹ平面内の駆動は、型３の位置がショット中心まわりで連続的に変化する軌跡であればよく、駆動も連続的ではなく、停止や移動方向反転などの間欠的な駆動を含んでもよい。また、型３の傾きを変更する代わりに、基板ステージ６の基板駆動機構６ａにより基板５の傾きを変更してもよいし、型３と基板５の傾きの変更を組合せて行ってもよい。 Also in the second embodiment, the drive of the mold 3 in the XY plane may be a locus in which the position of the mold 3 continuously changes around the center of the shot, and the drive is not continuous, and the stop or movement direction is not continuous. It may include an intermittent drive such as inversion. Further, instead of changing the inclination of the mold 3, the inclination of the substrate 5 may be changed by the substrate drive mechanism 6a of the substrate stage 6, or the inclination of the mold 3 and the substrate 5 may be changed in combination.

＜物品製造方法＞
次に、前述のインプリント装置を利用した、物品（半導体ＩＣ素子、液晶表示素子、カラーフィルタ、ＭＥＭＳ等）の製造方法を説明する。物品は、前述のインプリント装置を使用して、型を用いて基板（ウエハ、ガラス基板等）上の硬化性組成物にパターンを形成する工程と、パターンが形成された基板を加工する工程と、他の周知の加工工程により製造される。他の加工工程には、エッチング、ダイシング、ボンディング、パッケージング等が含まれる。本製造方法によれば、従来よりも高品位の物品を製造することができる。 <Product manufacturing method>
Next, a method of manufacturing an article (semiconductor IC element, liquid crystal display element, color filter, MEMS, etc.) using the above-mentioned imprint device will be described. The article is a step of forming a pattern on a curable composition on a substrate (wafer, glass substrate, etc.) using a mold using the above-mentioned imprint device, and a step of processing the substrate on which the pattern is formed. , Manufactured by other well-known processing processes. Other processing steps include etching, dicing, bonding, packaging and the like. According to this manufacturing method, it is possible to manufacture a high-quality article as compared with the conventional method.

Claims (12)

型を用いて基板上の組成物を成形する成形装置であって、
型を保持する型保持部と、
基板を保持する基板保持部と、
型と組成物を接触させて組成物を成形した後に型と組成物を離す第１方向における、前記型保持部及び前記基板保持部の少なくとも一方の移動を行う第１駆動部と、
前記第１方向に対して垂直な方向における前記型保持部及び前記基板保持部の少なくとも一方の移動を行う第２駆動部と、を有し、
型と組成物を離すときに、前記第２駆動部によって前記第１方向に対して垂直な第２方向への移動と、前記第１方向に対して垂直であって前記第２方向に交差する第３方向への移動と、を行うものであり、
前記第２駆動部は、前記第１方向に平行な軸の回りに、前記型保持部及び前記基板保持部の少なくとも一方を旋回させる、および前記第１方向に対して垂直な方向において前記第２駆動部による移動の軌跡が楕円状の軌跡を含むように、前記型保持部及び前記基板保持部の少なくとも一方を移動させる、の少なくともいずれか一方を行うことを特徴とする成形装置。 A molding device that molds a composition on a substrate using a mold.
A mold holder that holds the mold,
The board holding part that holds the board and
A first driving unit that moves at least one of the mold holding portion and the substrate holding portion in the first direction in which the mold and the composition are brought into contact with each other to form the composition and then the mold and the composition are separated.
It has a second drive unit that moves at least one of the mold holding portion and the substrate holding portion in a direction perpendicular to the first direction.
When the mold and the composition are separated, the second driving unit intersects the movement in the second direction perpendicular to the first direction and the second direction perpendicular to the first direction. It moves in the third direction and
The second drive unit swivels at least one of the mold holder and the substrate holder around an axis parallel to the first direction, and the second in a direction perpendicular to the first direction. A molding apparatus characterized in that at least one of the mold holding portion and the substrate holding portion is moved so that the locus of movement by the driving unit includes an elliptical locus . 前記第２駆動部による移動の方向を連続的又は間欠的に変化させることを特徴とする請求項１に記載の成形装置。 The molding apparatus according to claim 1, wherein the direction of movement by the second driving unit is continuously or intermittently changed. 前記第２駆動部は、前記第１駆動部による前記第１方向への移動量に応じて、前記第１方向に対して垂直な方向における前記型保持部と前記基板保持部の相対的な距離の最大値を変化させることを特徴とする請求項１または２に記載の成形装置。 The second drive unit is a relative distance between the mold holding unit and the substrate holding unit in a direction perpendicular to the first direction according to the amount of movement of the first driving unit in the first direction. The molding apparatus according to claim 1 or 2 , wherein the maximum value of is changed. 前記第２駆動部は、型と基板との距離に応じて、前記第１方向に対して垂直な方向における前記型保持部と前記基板保持部の相対的な距離の最大値を変化させることを特徴とする請求項１乃至３のうち何れか１項に記載の成形装置。 The second driving unit changes the maximum value of the relative distance between the mold holding portion and the substrate holding portion in the direction perpendicular to the first direction according to the distance between the mold and the substrate. The molding apparatus according to any one of claims 1 to 3 . 前記第２駆動部は、前記第１駆動部による前記第１方向への移動の速度に応じて、前記第１方向に対して垂直な方向における前記型保持部と前記基板保持部の相対的な距離の最大値を変化させることを特徴とする請求項１乃至４のうち何れか１項に記載の成形装置。 The second drive unit is relative to the mold holder and the substrate holder in a direction perpendicular to the first direction, depending on the speed of movement of the first drive unit in the first direction. The molding apparatus according to any one of claims 1 to 4, wherein the maximum value of the distance is changed. 前記基板保持部は前記基板を吸着する吸着部を有し、
型と組成物の接触領域に対応する第１領域における前記吸着部による吸着力を、前記第１領域とは異なる第２領域における前記吸着部による吸着力よりも弱めた状態で、型と組成物を離すことを特徴とする請求項１乃至５のうち何れか１項に記載の成形装置。 The substrate holding portion has a suction portion that adsorbs the substrate.
The mold and composition are in a state where the adsorption force by the adsorption portion in the first region corresponding to the contact region between the mold and the composition is weaker than the adsorption force by the adsorption portion in the second region different from the first region. The molding apparatus according to any one of claims 1 to 5 , wherein the molding apparatus is separated from each other. 型と組成物の接触領域における型の部分を曲げた状態で型と組成物を離すことを特徴とする請求項１乃至６のうち何れか１項に記載の成形装置。 The molding apparatus according to any one of claims 1 to 6 , wherein the mold and the composition are separated from each other in a state where the mold portion in the contact region between the mold and the composition is bent. 前記第１方向に対して垂直な平面に対して前記型保持部及び前記基板保持部の少なくとも一方の傾きを変更する第３駆動部を有し、
型と組成物を離すときに、前記第２駆動部による移動とともに、前記第３駆動部による傾きの変更を行うことを特徴とする請求項１乃至７のうち何れか１項に記載の成形装置。 It has a third drive unit that changes the inclination of at least one of the mold holding portion and the substrate holding portion with respect to a plane perpendicular to the first direction.
The molding apparatus according to any one of claims 1 to 7 , wherein when the mold and the composition are separated, the tilt is changed by the third drive unit as well as the movement by the second drive unit. .. 型と基板を離し始めたときの前記型保持部と前記基板保持部の位置から前記第２駆動部によって前記第１方向に対して垂直な方向へ変位させたときの変位に応じて、前記第３駆動部による傾きの変更を行うことを特徴とする請求項８に記載の成形装置。 The first is based on the displacement when the mold and the substrate are displaced from the positions of the mold holding portion and the substrate holding portion in a direction perpendicular to the first direction by the second driving unit when the mold and the substrate are started to be separated. 3. The molding apparatus according to claim 8 , wherein the tilt is changed by the drive unit. 前記成形装置は、型のパターンを組成物に接触させることにより組成物のパターンを形成することを特徴とすることを特徴とする請求項１乃至９のうち何れか１項に記載の成形装置。 The molding apparatus according to any one of claims 1 to 9 , wherein the molding apparatus is characterized in that the pattern of the composition is formed by bringing the pattern of the mold into contact with the composition. 前記成形装置は、型の平面部を組成物に接触させることにより組成物を平坦にすることを特徴とすることを特徴とする請求項１乃至１０のうち何れか１項に記載の成形装置。 The molding apparatus according to any one of claims 1 to 10 , wherein the molding apparatus is characterized in that the flat surface portion of the mold is brought into contact with the composition to flatten the composition. 請求項１１に記載の前記成形装置を用いて基板にパターンを形成する工程と、
パターンが形成された基板を加工する工程と、を含み、加工された基板から物品を製造することを特徴とする物品の製造方法。 A step of forming a pattern on a substrate by using the molding apparatus according to claim 11 .
A method for manufacturing an article, comprising a step of processing a substrate on which a pattern is formed, and comprising manufacturing the article from the processed substrate.
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