JP6995333B2 - Manufacturing method of active matrix substrate and active matrix substrate - Google Patents

Description

The present invention relates to a large-area active matrix substrate, and more specifically, a self-luminous display device, a liquid crystal display device, an electrochromic display device, a self-luminous lighting device, a sensor device, and a multi-point sensor that can be driven and read by the active matrix. Regarding devices, multifunction sensor devices, and methods for manufacturing them.

In recent years, active matrix type devices formed of thin film transistors have become widespread, mainly in liquid crystal displays, and have penetrated into various fields. Technological evolution is intensifying according to applications such as higher definition and larger size, and technological innovation in terms of functionality such as flexible active matrix is progressing. For example, as an active matrix type display device, the liquid crystal display method is currently the mainstream, and the method using organic EL mainly for small and medium-sized displays is also increasing its share. In addition, displays using LEDs are also increasing as large displays mainly for outdoor applications, but display devices using LEDs as light emitting elements are passive matrix type and there are few examples of being driven by active matrix type.

As a new field of active matrix devices, the digital signage market, which uses displays as an advertising medium instead of paper in transportation and retail stores, is expected to expand. Currently, it is mainly used for advertisements and information transmission in trains with small displays and POP advertisements at retail stores, but there is a high potential need for digital signage for large displays. Consumption behavior by transmitting video advertisements, sales promotion information, event service information, etc. according to the location and consumer behavior at large commercial facilities, downtown areas, or event venues using a large display. Is being considered to promote. The high advertising effect of the large display has been confirmed in demonstration experiments.
In addition to displays, applications such as forming a pressure sensor or the like on an active matrix to observe load transfer during walking or exercising have also been proposed.

JP 2012-227514

However, with the existing active matrix technology, due to the nature of manufacturing on a large glass substrate, the cost of manufacturing equipment rises sharply as the size increases, and there is an upper limit to the size that can be manufactured. For example, in the case of realizing a display for ultra-large signage, the size is increased by combining multiple liquid crystal displays of about 40 to 100 inches, but the weight of the entire housing is increased and the installability in the outdoors is poor. It has not been widely used since then. Therefore, LED displays have become the mainstream for ultra-large displays used indoors and outdoors. However, with the current technology, since a dedicated drive circuit is installed as a set in the passive matrix drive system, it is difficult to make the display unit high-definition, lightweight and thin, and the flexibility of the substrate (hereinafter referred to as flexibility). It is also a constraint on.

As a method for solving this, one or a plurality of LEDs are laminated and integrated on a driver IC in which one or a plurality of drive circuits are formed on a semiconductor substrate, and measures against transistor malfunction are included. A pixel chip has been proposed (Patent Document 1). In this method, it is possible to mount the device in high definition for each driver IC, and it is also possible to transfer and mount multiple pixels at once, which greatly improves the mounting process compared to the case where RGB is individually mounted or mounted for each pixel. Can be shortened. However, since the driver IC having the size of a plurality of pixels including the device mounting area is mounted, the weight reduction, the thinning, and the flexibility when the size is increased are sacrificed. Further, a very complicated shape must be formed on the driver IC and devices such as micro LEDs must be laminated, which makes the manufacturing process very complicated. In addition, each chip must be repeatedly transferred, for example, for each temporary transfer board unit on a lithographic plate, and must be aligned with adjacent pixels with high accuracy for each transfer.

Further, as the resolution of the active matrix is improved, the number of mounting locations is greatly increased and the position accuracy required for mounting is also increased, which causes a problem of cost increase due to the time required for the mounting process and the decrease in mounting yield. Moreover, at present, a technique for transferring a flexible substrate with high accuracy is eagerly desired.

In view of such a situation, the present invention greatly shortens the process by minimizing the complicated process and further simplifying the transfer mounting process of the thin film transistor constituting the active matrix, and makes it lightweight and thin and flexible. It realizes a super-large active matrix that can be maintained to the maximum. Furthermore, maintaining maximum flexibility leads to the creation of new applications not found in existing large active matrices.

A substrate and a first substrate having at least a first electrode layer, a first insulating layer, a first semiconductor layer, and a second electrode layer formed on the substrate, a substrate and a substrate formed on the substrate. A second substrate having at least a first electrode layer, wherein the first substrate and the second substrate are manufactured in separate steps, and the first substrate is placed on the second substrate. An active matrix board that is mounted and electrically connected, and has one or more drive circuits formed of at least one or more transistors, and has an aspect ratio of a board outer shape of greater than 1: 1.

The first substrate is an active matrix substrate having a rectangular aspect ratio of 1: 2 or more.

The first substrate is an active matrix substrate composed of flexible members.

A second insulating layer having an opening on the second electrode layer of the first substrate is further provided, and an opening for mounting a component on the first electrode layer of the second substrate is provided. An active matrix substrate further comprising an insulating layer of 1.

In the drive circuit of one or more circuits formed on the board, the circuit of the minimum configuration unit in the row direction or the column direction constituting the active matrix is one row and multiple columns, or one column and multiple rows are multiple columns or. An active matrix board that is continuously and repeatedly arranged side by side in multiple rows.

On the second substrate, the first substrate having a rectangular shape is continuously mounted in the row direction or the column direction, and when it is continuous in the row direction, it is mounted discretely in the column direction. An active matrix board that is mounted discretely in the row direction if it is continuous in the column direction.

The first substrate is an active matrix substrate having an opening or an electrode that can be connected to another substrate at the boundary portion of the region corresponding to the row and column of the minimum structural unit constituting the active matrix.

An active matrix board having a position information recognition mark for recognizing the position information required when mounting the first board on the second board on the first board and the second board, respectively.

A substrate and a first substrate having at least a first electrode layer, a first insulating layer, a first semiconductor layer, and a second electrode layer formed on the substrate, a substrate and a substrate formed on the substrate. A second substrate with at least a first electrode layer, the first substrate and the second substrate are made in separate steps, and the first substrate is mounted and electrically mounted on the second substrate. The first substrate is mounted on the second substrate by the rotary flexible substrate mounting device in which the temporary fixing substrate for temporarily fixing the first substrate is installed on the rotary plate cylinder. How to manufacture an active matrix substrate.

According to the present invention, the wirings, display elements, pixel drive circuits, etc. required for the active matrix display, such as the row selection line, the column selection line, the power supply line, and the ground line, which are stretched over the entire display area of the display, are the most suitable for each. Since it can be formed by a process method and density with high economic efficiency, it is possible to limit the increase in size of the manufacturing equipment due to the increase in size of the display.

Specifically, since the first substrate, which requires a complicated process for manufacturing a thin film transistor or the like, can be manufactured using a relatively small substrate, capital investment and manufacturing cost can be suppressed. Further, the large second substrate can be manufactured by a simple method of screen printing, and since there is no complicated device such as a thin film transistor, it can be manufactured with a high yield. Further, in the case of manufacturing a large active matrix, it can be realized by laminating a second substrate.

It is a drawing which shows the 1st Embodiment of this invention. It is a drawing which shows the 2nd Embodiment of this invention. It is a drawing which shows the 3rd Embodiment of this invention. It is a drawing which shows the mounting process 1 of the 3rd Embodiment of this invention. It is a drawing which shows the mounting process 2 of the 3rd Embodiment of this invention. It is a drawing which shows the mounting process 3 of the 3rd Embodiment of this invention. It is a drawing which shows the 4th Embodiment of this invention. It is a drawing which shows the mounting process 1 of the 4th Embodiment of this invention. It is a drawing which shows the mounting process 2 of the 4th Embodiment of this invention. It is a drawing which shows the mounting process 3 of the 4th Embodiment of this invention. It is a circuit diagram of the pixel drive circuit formed on the 1st substrate 104. It is a step view of the pixel drive circuit board formed on the 1st board 104. It is sectional drawing of the 2nd substrate 204. It is sectional drawing which mounted the 1st board 104 and component 400 on the 2nd board 204. It is a conceptual diagram which shows the method of manufacturing the large-sized active matrix substrate by connecting the 2nd substrate 204. It is a conceptual diagram which shows an example of the position information recognition mark at the time of connecting a 1st board 104 and a 2nd board 204.

First, the first substrate 100, 101, 102, 103, 104 for carrying out the present invention (hereinafter, unified as the first substrate 104 in this description) and the second substrate 200, 201, 202, 203, Details of 204, 210, 211, 212, and 213 (hereinafter, unified to the second substrate 204 in this description) will be described.

First, a pixel drive circuit board (FIG. 12) formed of a thin film transistor having a 2-transistor 1-capacitor (2Tr1C) configuration shown in FIG. 11 is formed on the first substrate 104. However, in FIGS. 12 and the subsequent drawings, a simplified display of one transistor will be described for simplification, but in reality, it is assumed that the elements constituting the circuit represented by FIG. 11 are included.

The configuration of the first substrate 104 is such that a flexible resin substrate 300 is formed on a temporary fixing substrate 301 (also referred to as a carrier substrate) for handling during the process. At this time, the temporary fixing substrate 301 for handling is not particularly limited as long as it is a rigid substrate having good dimensional stability represented by non-alkali glass, quartz glass, Si substrate and the like.
Examples of the flexible resin substrate 300 include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polycarbonate (PC), polyimide (PI), polyethersalphon (PES), and polyetherimide. (PEI), Polyphenylene Sulfide (PPS), Total Aromatic Polyetherketone (also known as aramid), Polyethereneether (PPE), Polyallylate (PAR), Polybutylene terephthalate (PBT), Polyoxymethylene (POM, also known as polyacetal), Examples include polyetheretherketone (PEEK), liquid crystal polymer (LCP) (eg, molten liquid liquid all-aromatic polyester (basic skeleton: parahydroxybenzoic acid, biphenol, phthalic acid)), parylene, metal foil substrate and the like.
The film thickness of the resin substrate 300 is 1 μm to 500 μm and can be freely set according to the intended purpose, more preferably 1 μm to 150 μm, and most preferably 1 μm to 50 μm.

Next, the conductive thin film 310 is formed on the resin substrate 300. As a method for forming the conductive thin film 310, for example, a sputtering method, a PVD method typified by a vacuum vapor deposition method, or a coating method using an ink containing a conductive film material is used to form the conductive thin film 310 on a resin substrate 300. Examples thereof include a method of forming a film on the film and then patterning it into a predetermined shape by a photolithography method.
Examples of the material for forming the conductive thin film 310 include metals such as Au, Ag, Cu, Mo, W, Ti, Al, Pd, Pt, and Ta, alloys of these metals, and compounds of these metals. Can be mentioned. As the material for forming the conductive film, a material having high conductivity is preferable.

Further, as another method for forming the conductive thin film 310, for example, the conductive thin film 310 patterned in a predetermined shape is directly formed on the resin substrate 300 by a plated printing method or a plateless printing method. The method can be mentioned. The process can be simplified by directly forming the conductive thin film 310 patterned in a predetermined shape.
When the conductive thin film 310 patterned in a predetermined shape is directly formed by a plate printing method or a plateless printing method, inks containing various conductive materials can be used. As the ink containing a conductive material, an ink containing a highly conductive material is preferable, for example, an ink containing a conductive polymer compound such as PEDOT / PSS, a fine particle dispersion ink in which nanoparticles of an inorganic material are dispersed, and an ink. Examples thereof include metal compound inks such as copper salts and silver salts. Examples of the fine particles contained in the fine particle dispersion ink include nano-Au, nano-Ag, nano-Cu, nano-Pd, nano-Pt, nano-Ni, nano-ITO, nano-silver oxide, and nano-copper oxide. Can be mentioned. The fine particle dispersion ink containing nano-silver oxide and nano-copper oxide may contain a reducing agent.

Further, the conductive thin film 310 may be formed by a plating method. As a method for forming the conductive thin film 310 by the plating method, for example, a plating primer layer patterned in advance in a predetermined shape is formed on the resin substrate 300 by a photolithography method, a plate printing method, or a plateless printing method. However, a method of forming a conductive thin film 310 at a predetermined position by a electroless plating method or a combination of an electroless plating method and an electroplating method can be mentioned.

The film thickness of the conductive thin film 310 is not particularly limited, but is preferably 20 nm to 1 μm, and more preferably 20 nm to 300 nm. When the conductive thin film 310 is formed by using the fine particle dispersion ink in which the nanoparticle fine particles of the inorganic material are dispersed, the film thickness of the conductive thin film 310 is preferably 100 nm to 300 nm, preferably 150 nm to 250 nm. More preferred. In the residue of the dispersant component contained in the fine particle dispersion ink and the bake treatment after the film formation of the conductive thin film 310, the nanoparticles contained in the conductive thin film 310 become non-uniform due to the growth of the nanoparticles. This is because the conductivity may be hindered, and the conductivity may decrease at a film thickness of 100 nm or less.
On the other hand, when the conductive thin film 310 is formed by using a silver salt or the like, the film thickness is preferably 20 nm to 100 nm, more preferably 20 nm to 60 nm. This is because in silver salts and the like, a film that is denser than the growth of nanoparticles and fine particles is formed, and conductivity is exhibited even with a thinner film thickness. By making it thinner, the step of the gate electrode becomes lower, which can contribute to improving the reliability of the insulating film on the gate electrode.

Next, the gate insulating film 311 is formed on the resin substrate 300 and the conductive thin film 310. As the gate insulating film 311, an organic insulating film containing a ferroelectric substance having a high relative permittivity or a polymer compound is preferable. Examples of the ferroelectric substance having a high relative permittivity include inorganic metal compounds typified by alumina (AlxOy) and hafnium oxide (HfxOy). Examples of the polymer compound include PS resin, PVP resin, PMMA resin, fluorine-containing resin, PI (polykimide) resin, PC (polycarbonate) resin, PVA (polyvinyl alcohol) resin, parylene resin, and these resins. Examples thereof include a copolymer containing a plurality of repeating units. Among these, as the polymer compound, a crosslinkable polymer compound is preferable because it is excellent in process resistance and stability typified by solvent resistance.

The film thickness of the gate insulating film 311 is not particularly limited, but is preferably 1 nm to 1 μm, more preferably 20 nm to 600 nm, and even more preferably 30 nm to 200 nm.

A more preferable structure for forming the gate insulating film 311 is a laminated film of a strong dielectric and an organic insulating film, and an alumina / PS resin, an alumina / PVP resin, an alumina / PMMA resin, an alumina / fluorine-containing resin, and an alumina / polyimide are more preferable. A structure typified by a resin, an alumina / PVA resin, an alumina / parylene resin, or the like can be considered. The film thickness of each structure is preferably 10 nm to 500 nm for the strong dielectric, 10 nm to 500 nm for the organic insulating film, 10 nm to 50 nm for the strong dielectric, 10 nm to 100 nm for the organic insulating film, and 10 nm to 100 nm for the strong dielectric. It is more preferably 40 nm and the organic insulating film is 10 nm to 40 nm.

As a method for patterning the gate insulating film 311, a method of directly patterning and forming by using a plate printing method or an unformatted printing method is preferable. Alternatively, patterning may be performed using a photolithography method by using a photopatterable material. As yet another method, when the laminated film with an inorganic film such as alumina is the gate insulating film 311 or the like, the gate insulating film 311 may be processed into a predetermined shape by laser ablation for the sake of process simplification. These patternings are particularly necessary when forming contact holes and the like.

Next, the organic semiconductor thin film 312 is formed on the gate insulating film 311. Examples of the method for forming the organic semiconductor thin film 312 include a method of selectively forming a material for forming the organic semiconductor thin film 312 only in a predetermined region where the organic semiconductor thin film 312 should be formed.
Specifically, PV represented by a vacuum vapor deposition method via a mask represented by a metal mask or the like.
The organic semiconductor thin film 312 is formed by forming the material for forming the organic semiconductor thin film 312 only in a predetermined region by the method D.
Further, a resin film having an opening may be formed only in a predetermined region where the organic semiconductor thin film 312 should be formed, and then the organic semiconductor thin film 312 may be formed on one surface by a vacuum vapor deposition method. In this case, it is preferable that the opening of the resin film is formed in a reverse taper shape in which the opening area becomes smaller as the distance from the resin substrate 300 increases. By using a resin film having an opening formed in an inverted tapered shape, the organic semiconductor thin film 312 formed in the opening and the organic semiconductor thin film 312 formed on the resin film are cut, and the resin is formed. This is because the membrane functions suitably as a separator.

As another method for forming the organic semiconductor thin film 312, for example, a PVD method typified by a vacuum vapor deposition method or a coating method using an ink containing an organic semiconductor material is used to form the organic semiconductor thin film 312 into a gate insulating film 311. Examples thereof include a method of forming a film on the film and then patterning it into a predetermined shape by a photolithography method.

Further, as another method for forming the organic semiconductor thin film 312, for example, the organic semiconductor thin film 312 patterned in a predetermined shape is directly formed on the gate insulating film 311 by a plated printing method or a plateless printing method. The method can be mentioned. By directly forming the organic semiconductor thin film 312 patterned in a predetermined shape, the step of forming the organic semiconductor thin film 312 can be simplified.
When higher performance is required, an organic single crystal film oriented in the uniaxial direction is formed on the entire surface of the gate insulating film 311 by a coating method using a plateless printing method, and patterned into a predetermined shape by a photolithography method. The method for obtaining the obtained organic semiconductor thin film 312 is most preferable.

An organic single crystal film oriented in the uniaxial direction is formed on the entire surface of the gate insulating film 311 by a coating method using a plateless printing method, and then an organic semiconductor thin film 312 patterned into a predetermined shape by a photolithography method is formed. When forming, an ink containing various organic semiconductor materials can be used, but it is preferable to use an ink containing a low molecular weight organic semiconductor material. Further, after the organic semiconductor thin film 312 is formed, a firing treatment may be carried out in order to control the morphology of the organic semiconductor thin film 3112 or to volatilize the solvent contained in the organic semiconductor thin film 312. The film thickness of the organic semiconductor thin film 312 is not particularly limited, but is preferably 1 nm to 1000 nm, more preferably 1 nm to 100 nm, and even more preferably 1 nm to 50 nm. The best film is more preferably a crystal film having a thickness of 3 to 5 molecular layers or less, and most preferably a bilayer.

Examples of the organic semiconductor material include pentacene and copper phthalocyanine as low molecular weight compounds that can be deposited by vapor deposition, and 6,13-bis (triisopropylsilyl) as compounds that can be deposited by coating. Ethynyl) Pentacene (6,13-bis (triisopropylsilylethynyl) pentacene (Tips-Pentacene)), 13,6-N-sulfinylacetamidopentacene (NSFAAP), 6,13-dihydro-6, 13-Pentacene-15-one (6,13-Dihydro-6,13-methanopentacene-15-one (DMP)), Pentacene-N-sulfinyl-n-butylcarbamate adduct (Pentacene-N-sulfinyl-n) -Pentacene precursors such as pentacene-N-sulfinyl-tert-butylcarbamate (Pentacene-N-sulfinyl-tert-butylcarbamate), [1] benzothieno [3,2-b] benzothiophene ( [1] Benzothieno [3,2-b] benzothiophene (BTBT)) 3,11-zidesildinafto [2,3-d: 2', 3'-d'] benzo [1,2-b: 4,5- b'] dithiophene (3,11-didecyldinaphto [2,3-d: 2', 3'-d'] benzo [1,2-b: 4,5-b'] dithiophene (C10-DNBDT)), benzo Low molecular weight compounds or oligomers typified by those having a bistiasiazol skeleton, porphyrin, benzoporphyrin, oligothiophene having an alkyl group as a soluble group, polythiophene, fluorene copolymers and IDT-BT (indacenodithiophene benzothiadiazole) having a DA structure. ), CDT-BT (Cyclopentadithiophene benzothiadiazole) and the like, and examples thereof.

Next, a patterned conductive thin film 315 is formed on the gate insulating film 311 and the organic semiconductor thin film 312. The conductive thin film 315 forms a source electrode and a drain electrode of the organic thin film transistor.

The conductive thin film 315 can be formed by the same method as the above-mentioned conductive thin film 310. The conductive thin film 315 may be formed by the same method as that of the conductive thin film 310 or by a different method. Further, if necessary, charge injection layers 313 and 314 for ohmic bonding the organic semiconductor thin film 312 and the conductive thin film 315 may be provided between the organic semiconductor thin film 312 and the conductive thin film 315.

The film thickness of the conductive thin film 315 (that is, the film thickness of the source electrode and the drain electrode of the organic thin film transistor) is not particularly limited, but is preferably 20 nm to 1 μm, more preferably 20 nm to 600 nm, and more preferably 20 nm to 500 nm. Is more preferable.

Next, the protective film 316 is formed on the gate insulating film 311, the organic semiconductor thin film 312, and the conductive thin film 315. As a method for forming the protective film 316, for example, a PVD method represented by a vacuum vapor deposition method, a CVD method represented by an ALD (atomic layer deposition) method, and a coating method using an ink containing a protective layer material are used to form a protective layer. A method of forming the 316 by forming a film and then patterning it into a predetermined shape by a photolithography method can be mentioned. Further, as another method for forming the protective layer 316, for example, a method for directly forming a protective film 316 patterned into a predetermined shape by a plate-based printing method or a plateless printing method can be mentioned. By directly forming the protective layer 316 patterned in a predetermined shape, the step of forming the protective layer 316 can be simplified.
Among these, a method of directly forming the protective layer 316 patterned into a predetermined shape by a plated printing method or a plateless printing method is preferable. As yet another method, patterning may be performed by making a hole in a predetermined place by laser ablation.

When the protective layer 316 patterned in a predetermined shape is directly formed by a plate printing method or a plateless printing method, inks containing various protective layer materials can be used. Examples of the ink containing the protective layer material include dispersed ink containing an inorganic material, SOG (spin-on-glass) material, ink containing a low molecular weight protective layer material, and ink containing a polymer protective layer material, and examples thereof include polymer protection. Inks containing layered materials are preferred.

Examples of the material forming the protective film 316 include the material contained in the above ink, the SOG material, and the same materials as those exemplified in the above-mentioned gate insulating film 311.

The film thickness of the protective film 316 is not particularly limited, but is preferably 50 nm to 5 μm, and more preferably 500 nm to 3.0 μm.

Finally, by forming the upper electrode 318 on the protective layer 316, the first substrate on which the pixel drive circuit is formed is completed. The method for forming the upper electrode 318 is not particularly limited, and examples thereof include a photolithography method, a plate printing method, and a plateless printing method, and among them, a screen (stencil) printing method, which is one of the plate printing methods, is used. The method is preferred.
As another method, a method of patterning the upper electrode 318 by utilizing the different coating of the conductive ink utilizing the repellent property may be used.
In this way, the first substrate 104 can be formed.

Here, the present invention has a configuration in which an opening or an electrode that can be connected to another substrate is provided at a boundary portion for each region (1 pixel) corresponding to rows and columns of the minimum structural unit constituting the first substrate 104. I'm taking it. This is so that when a part of the first substrate 104 is defective, only the defective portion can be selectively repaired by the non-defective first substrate 104.

Next, the second substrate 204 (FIG. 13) is manufactured. The second substrate 204 may be manufactured by being fixed to the carrier substrate in the same manner as the first substrate 104, or the process may be carried out by roll-to-roll, and the most suitable method at that time can be used. ..

First, the electrode pattern 510 is formed on the base substrate 500 constituting the second substrate 204. The screen printing method is the most preferable method for forming the electrode pattern 510, but a photolithography method may be used for patterning. After that, the electrode pattern 510 is obtained by appropriately undergoing a firing step or the like.

Next, an insulating film pattern 520 having an opening at a position where the terminal portion at the end of the substrate, the first substrate 104 and the component 400 is mounted is formed on the pattern. The screen printing method is the most preferable method for forming the insulating film pattern 520, but it may be applied by slit coating or spin coating and then patterned by a photolithography method or laser ablation. This step also obtains the insulating film pattern 520 by appropriately undergoing a firing step or the like.
By going through this step, the second substrate 204 is completed.

Next, the first board 104 and the component 400 are mounted on the second board 204 (FIG. 14). As a mounting method, a general chip mounter device may be used for mounting. As for the method of fixing the first substrate 104 and the component 400 on the second substrate 204, the adhesive 600 may be patterned at a position to be mounted in advance by a screen printing method or the like. Further, the mounted component may be fixed by applying the pre-sintered Ag paste 610 to the portion where the first substrate 104 and the component 400 are mounted by screen printing before and after mounting, and then sintering the component after mounting.
The best mounting method is to apply the adhesive 600 to the mounting locations of the first board 104 and the component 400 in advance, and then mount and fix the first board 104 face-up on it, and then fix it. The Ag paste 610 is printed on the screen by screen printing so as to straddle the terminal portion for connecting the terminal portion of the first substrate 104 and the connection terminal for connecting the first substrate 104 provided on the second substrate 204, and further the same process. The Ag paste 610 is also patterned on the connection terminal portion for mounting the component 400. Next, the component 400 is mounted in the face-up direction, and finally, the Ag paste 610 is dried at 100 ° C. for 30 minutes, for example. This completes the mounting of the components on the second board 204.

By the way, the size of the second board 204 may be basically set according to the work size of the printed circuit board, which incorporates special specifications when introducing a manufacturing device such as a screen printing machine. There is no need. For example, the copper-clad laminate has a maximum size of 1000 (1020) x 1000 (1020) mm or 1000 (1020) x 1200 (1220) mm, which is divided into four to 500 (510) x 500 (510). ) It can be used as a work size of mm □ or smaller.

Next, a case where the second substrates 204 are bonded together to form a large display will be described. A large active matrix LED display can be realized by laminating a plurality of 500 × 500 mm □ boards in the column direction or row direction. At this time, the joint surface 700 connecting the second boards 204 to each other is at least an electrode. It is preferable that the terminal portion is bonded with the conductive adhesive 710, and the other substrate portions are connected with the resin adhesive 720 (FIG. 15 (a)). Alternatively, it is most preferable that there is a joining mechanism 7400 using a magnet 730 or the like at the end of each panel, and the boards are connected with one touch (FIG. 15 (b)).

Hereinafter, the first embodiment of the present invention will be described in detail with reference to the drawings. In the following description, the area of one row and one column, which is the smallest unit constituting the active matrix, is described as one pixel or one pixel, and the smaller unit constituting the one pixel is described as a subpixel.

The first embodiment is shown in FIG. FIG. 1 shows the configuration of the smallest unit of the present invention. 100 representing one pixel of the first board, 200 showing one pixel of the second board, one pixel 210 of the second board in which the first board is mounted, the first board is actually mounted. The second substrate 211 is shown.

The feature is a rectangle of 1: 1.5 with an aspect ratio of the first substrate 100 greater than 1: 1 and the same as at least one side of 200 in the row or column direction indicating one pixel of the second substrate. It is made up of lengths. By adopting such a configuration, when mounted on the second substrate 211, the first substrate can be continuously arranged in one direction.

Next, a second embodiment, which is a modification of the first embodiment, will be described.

The second embodiment is shown in FIG. FIG. 2 shows the first substrates 101, 102, 103 constituting the drive circuit corresponding to each subpixel, and the subpixels 201, 202, 203, second of the second substrate constituting the pixels of the second substrate. 212 is shown in which the drive circuit of the subpixel of the first board is mounted on the subpixel of the board, and 213 is shown in which the drive circuit of the subpixel of the first board is actually mounted on the second board.

The feature of the second embodiment is that the shape in which the arrangement areas of the drive circuits 101, 102, and 103 of each subpixel are connected is an aspect ratio of 1: 2 or more, and in this case, a rectangle of 1: 3 is formed. Similar to the embodiment of the above, when viewed at one pixel, it is composed of the same length as one side in the row or column direction. By adopting such a configuration, when mounted on the second substrate 213, the first substrate can be continuously arranged in one direction.

Here, with reference to FIGS. 3 to 6, the effects obtained by adopting a configuration in which the first substrates are continuously arranged in one direction shown in the first embodiment and the second embodiment are used. explain. The present embodiment is for bonding thin film transistors according to a manufacturing method for realizing the first embodiment and the second embodiment.

FIG. 3 shows a mother substrate formed by integrating the first substrate 104 and a second substrate 204 on which the first substrate 104 is mounted. The first substrate 104 shown in the first embodiment and the second embodiment has a rectangular shape in which the aspect ratio of one side in the vertical and horizontal directions is larger than 1: 1. This includes sub-pixels and the like within one pixel as shown in the second embodiment. By adopting such a configuration, when the first substrate 104 is mounted on the second substrate 204, for example, in the case of a configuration in which RGB subpixels are included on the first substrate 104, each subpixel corresponds to each subpixel. Compared with the case where the thin film transistors are mounted separately, the mounting time per row or column is 1/3. Further, in the present invention, when a rectangle having an aspect ratio of 1: 6 or more per pixel is used, pixels of 2 pixels or more are included, and the mounting time is 1/6 or less. More preferably, the aspect ratio is 1: 9 or more. For example, when a 0.2 × 0.2 mm subpixel formed on the first substrate 104 is considered as one pixel, one pixel of a display or the like is roughly composed of a square, so 0.2 × 0. It is sufficient to mount 3 sub-pixels of 0.2 × 0.6 mm for a pixel of 0.6 × 0.6 mm in which 2 mm is tripled. When the thin film transistor in the 0.2 × 0.2 mm subpixel region is formed on a mother substrate of 200 × 200 mm (effective film formation area 180 × 180 mm), 900 × 300 pixels (900 × 900 subpixels) can be formed. By cutting this into a strip of 1 × 300 pixels and using it as the first substrate 104, and mounting one row and multiple columns or one column and multiple rows on the second substrate 204 in strip-shaped units. 300 pixels (900 subpixels) can be transferred and mounted at one time. With this, the mounting time per row or column is 1/900.

As a method of further shortening the mounting time, the size of the temporary transfer board used in the mounting process and the size of the mother board for manufacturing the thin film transistor are the same or larger, and all the first boards 104 manufactured on the mother board are made. Is transferred to the temporary transfer board at once. This principle will be described with reference to FIGS. 4 to 6.

FIG. 4 (a) shows an array of the first substrate 104 made on the mother substrate. FIG. 4B shows a state in which the first substrate 104 is temporarily transferred to the plate cylinder 500 with the temporary transfer substrate. FIG. 4C shows how the first substrate 104 is transferred from the plate cylinder 500 with the temporary transfer substrate to the second substrate 204.
In FIGS. 5 and 6, after the first substrate 104 is transferred to the second substrate 204 by the length of the mother substrate, the plate cylinder 500 with the temporary transfer substrate is shifted by one line and continuously transferred and mounted. It shows how the process is repeated. By repeating the steps of FIGS. 4 (b), 4 (c), 5 and 6, it is possible to obtain a second substrate 204 on which the first substrate 104 shown in FIG. 3 is mounted.

In the explanation using FIGS. 4 to 6 above, 9 rows and 3 columns by 3 times transfer mounting of 3 rows and 3 columns have been described.
A case where the first substrate 104 formed on the 200 × 200 mm mother substrate is transfer-mounted will be described. As shown above, 900 rows or 900 columns of strip-shaped first substrate 104 of 1 × 300 pixels can be produced on 200 × 200 mm (effective film formation area 180 × 180 mm) at a time. .. Here, when the area of the plate cylinder 500 with a temporary transfer substrate is the same as that of the 200 × 200 mm mother substrate, the first substrate 104 is 0 per row or column for 1 pixel 0.6 × 0.6 mm. Since it is .2 × 0.6 mm, the first substrate 104 for 900 × 300 pixels can be provisionally transferred to the plate cylinder 500 with the temporary transfer substrate. Therefore, since it is sufficient to transfer at a pitch of 3: 1, it is possible to transfer 300 rows or 300 columns at one time. By doing so, it is possible to reduce the time of the mounting process to 1/90,000. In this case, since 300 rows or 300 columns can be transferred at one time, a 200 × 200 mm substrate capable of forming 900 rows or 900 columns by repeating mounting discretely at a pitch of 0.6 mm in the row or column direction can be used. The mounting process can be carried out three times in a row, the mounting process can be further made more efficient, and the mounting time can be shortened.

To explain a further feature of this method, since the substrate area at the time of handling can be increased by making the first substrate 104 into a strip shape, the thin film transistor substrate manufactured on the flexible substrate does not impair the handleability. It can be transferred and mounted, and as a method of mounting it, it is possible to mount it with a very simple device configuration by applying a rotary press of a printing device. Further, by using the rotary press method, transfer mounting can be performed by line contact with the second board 204 as compared with the conventional method, so that even when a board having a large strip-shaped area is mounted, the first board transfer is performed. Defects such as bubbles getting caught between the substrate 104 and the second substrate 204 can be minimized, and the reliability of the mounting process can be improved.

In this way, by using the method of the present invention, it is possible to create a large active matrix by a method different from the existing method. Further, by using the first substrate 104 shown in the first embodiment and the second embodiment of the present invention, the time of the mounting process can be significantly shortened.

Further, a modified example of the third embodiment described with reference to FIGS. 3 to 6 will be described with reference to FIGS. 7 to 10. The present embodiment is for bonding thin film transistors according to a manufacturing method for realizing the first embodiment and the second embodiment.

FIG. 7 shows a second substrate 204 on which the first substrate 104 and the first substrate 104 are mounted. The difference from the third embodiment is that the first substrate 104 is divided into units of one pixel, which is the minimum configuration of the present invention.
FIG. 8 (a) shows an array of the first substrate 104 made on the mother substrate. FIG. 8B shows a state in which the first substrate 104 is temporarily transferred to the plate cylinder 500 with the temporary transfer substrate. FIG. 8C shows how the first substrate 104 is transferred from the plate cylinder 500 with the temporary transfer substrate to the second substrate 204.
In FIGS. 9 and 10, after the first substrate 104 is transferred to the second substrate 204 by the length of the mother substrate, the plate cylinder 500 with the temporary transfer substrate is shifted by one line and continuously transferred and mounted. It shows how the process is repeated. By repeating the steps of FIGS. 8 (b), 8 (c), 9 and 10, a second substrate 204 on which the first substrate 104 shown in FIG. 7 is mounted can be obtained.
As described above, even in the present embodiment, which is the minimum structural unit of the present invention, the same effect can be obtained by using the method shown in the third embodiment.

In order to mount the first substrate 104 on the second substrate 204 in such a row or discrete form in the column direction, in the conventional method, the thin film transistor is once adsorbed or temporarily fixed for temporary adhesion. Only the part to be transferred to the substrate is adsorbed and transferred. To briefly show the flow, 6 cycles of (1) alignment → (2) adsorption → (3) movement → (4) alignment → (5) transcription → (6) movement are repeated for each transfer.
On the other hand, to briefly explain the process flow by the method of the present invention, (1) alignment → (2) adsorption → (3) movement → (4) alignment → (5) transfer → (6) movement → (7) transfer → (8) It will be in the form of movement. This flow is the same as the first 6 cycles of the conventional method, but after that, transfer can be performed only by repeating 2 cycles of (7) transfer → (8) transfer, and the transfer efficiency can be greatly improved. can. The major factor is that the transfer target used in the present invention is a thin film transistor formed on a flexible substrate, so that the substrate can be bent, and when transferring this, a rotary printing press was applied. This is because a rotary transfer type transfer device can be used. Similar to the rotary printing device, the rotary transfer device moves in one direction unless the substrate is newly replaced after the X, Y, and θ alignments are performed once, so the repeatability of the device should be improved. This is because the alignment will not be significantly out of order.

Further, in order to realize repetitive transfer to a higher speed and more accurate position, it is desirable that the first substrate 104 and the second substrate 204 are each provided with a position information recognition mark for recognizing the position information. By providing these, even if the transfer plate cylinder or the stage moves at high speed, high repeatability can be ensured by using image recognition.
By providing this mechanism, it is preferable to suppress the repeat position accuracy to ± 100 μm or less, more preferably ± 50 μm or less, and the best is ± 10 μm or less.
The shape of the position information recognition mark can be freely set by the designer. For example, the first substrate 104 may be provided with a ●, and the second substrate 204 may be provided with an object such as 〇 containing the ● of the first substrate 104. (Fig. 16)

(Action and effect)
According to this embodiment, it has been shown that an active matrix can be realized by mounting and combining high-performance organic TFTs and substrates constituting a large active matrix substrate independently manufactured on separate substrates. INDUSTRIAL APPLICABILITY According to the present invention, the cost required for mounting can be minimized, and a large-sized active matrix substrate can be manufactured at low cost. Further, if the high-performance organic TFT to be mounted has a malfunction, it can be repaired by separately mounting the non-defective first substrate 104 only in the defective portion.

100, 101, 102, 103, 104 First substrate 200, 201, 202, 203 Second substrate in subpixel units 204, 210, 211, 212, 213 Second substrate 500 Plate cylinder with temporary transfer substrate 300 Resin Fabric 301 Temporary fixing substrate for handling 310 Gate electrode of organic TFT on the first substrate 311 Gate insulating film of the organic TFT on the first substrate 312 Organic semiconductor film of the organic TFT on the first substrate 313 1st Charge injection layer of the source electrode portion of the organic TFT on the substrate 314 Charge injection layer of the drain electrode portion of the organic TFT on the first substrate 315 Wiring layer, source electrode, drain electrode 316 of the organic TFT on the first substrate. Insulation film of the organic TFT on the first substrate 317 Contact hole for connecting between the layers of the organic TFT wiring on the first substrate 318 Upper electrode layer of the organic TFT on the first substrate 321 Electrod of the first substrate Connect to the row selection line with the pad 322 Connect to the column selection line with the electrode pad of the first substrate 323 Connect to the power supply line or the cathode of the LED with the electrode pad of the first substrate 325 Electrod pad of the first substrate The selection TFT in the 350 first substrate connected to the ground wire or the anode of the LED.
360 Driving TFT on the first substrate
370 Retaining capacitance element on the first substrate 500 Second substrate 510 Electrode pattern on the second substrate 520 Insulation film pattern on the second substrate 600 Adhesive for mounting the first substrate, components, etc. 610 Ag paste 700 Bonding surface between substrates 710 Conductive adhesive for bonding substrates 720 Resin adhesive for bonding substrates 730 Magnet 740 Bonding mechanism

Claims (10)

A first substrate in which a first electrode layer, a first insulating layer, a first semiconductor layer, and a second electrode layer are laminated in this order on a substrate, and
A second substrate on which an electrode layer is formed is provided on the substrate.
The first substrate and the second substrate are manufactured in separate processes.
The first board is mounted on the second board and electrically connected, and is provided with one or more drive circuits formed of at least one or more transistors, and has an aspect ratio of the outer shape of the board. Greater than 1: 1
The substrate of the first substrate is an active matrix substrate characterized by being a flexible resin substrate. A first substrate in which a first electrode layer, a first insulating layer, a first semiconductor layer, and a second electrode layer are laminated in this order on a substrate, and
A second substrate on which an electrode layer is formed is provided on the substrate.
The first substrate and the second substrate are manufactured in separate processes.
The first board is mounted on the second board and electrically connected, and is provided with one or more drive circuits formed of at least one or more transistors, and has an aspect ratio of the outer shape of the board. Greater than 1: 1
On the second substrate, the first substrate is continuously mounted in the row direction or the column direction, and when it is continuous in the row direction, it is discretely mounted in the column direction and is mounted in the column direction. An active matrix substrate characterized in that it is mounted discretely in the row direction when it is continuous. The active matrix substrate according to claim 1 or 2, wherein the first substrate is a rectangle having an aspect ratio of 1: 2 or more. The first substrate further comprises a second insulating layer having an opening on the second electrode layer.
One of claims 1 to 3, wherein the second substrate further includes an insulating layer having an opening for mounting a component on the electrode layer of the second substrate. The active matrix substrate described in the section. In the drive circuit of one or more circuits formed on the first substrate, the circuits of the minimum configuration unit in the row direction or the column direction constituting the active matrix board are one row and a plurality of columns, or one column and a plurality of circuits. The active matrix substrate according to any one of claims 1 to 4, wherein the rows are arranged in a plurality of columns or continuously and repeatedly in a plurality of rows. The active matrix substrate according to any one of claims 1 to 5, wherein a self-luminous element is mounted on the second substrate. The active matrix substrate according to any one of claims 1 to 6, wherein a liquid crystal element or an electrochromic element is mounted on the second substrate. The active matrix substrate according to any one of claims 1 to 7, wherein a sensor device is mounted on the second substrate. The first board and the second board each have a position information recognition mark for recognizing the position information necessary for mounting the first board on the second board. The active matrix substrate according to any one of claims 1 to 8, which is characterized. A step of producing a first substrate in which a first electrode layer, a first insulating layer, a first semiconductor layer, and a second electrode layer are laminated in this order on a substrate.
In a step different from the step of manufacturing the first substrate, a step of manufacturing a second substrate having an electrode layer formed on the substrate and a step of manufacturing the second substrate.
A step of mounting the first substrate on the second substrate and electrically connecting the first substrate is provided.
The first substrate is mounted on the second substrate by a rotary flexible substrate mounting device in which a temporary fixing substrate for temporarily fixing the first substrate is installed on a rotary plate cylinder. A method for manufacturing an active matrix substrate.

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