JP6985286B2 - 発光素子およびこれを備えた発光モジュール - Google Patents

発光素子およびこれを備えた発光モジュール Download PDF

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Publication number
JP6985286B2
JP6985286B2 JP2018549891A JP2018549891A JP6985286B2 JP 6985286 B2 JP6985286 B2 JP 6985286B2 JP 2018549891 A JP2018549891 A JP 2018549891A JP 2018549891 A JP2018549891 A JP 2018549891A JP 6985286 B2 JP6985286 B2 JP 6985286B2
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Prior art keywords
light emitting
recess
emitting diode
region
layer
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Expired - Fee Related
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JP2018549891A
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Japanese (ja)
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JP2019511126A (ja
JP2019511126A5 (https=
Inventor
キム，キヒョン
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スージョウ レキン セミコンダクター カンパニー リミテッド
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Priority claimed from KR1020160033927A external-priority patent/KR102566046B1/ko
Priority claimed from KR1020160033931A external-priority patent/KR102628791B1/ko
Application filed by スージョウ レキン セミコンダクター カンパニー リミテッド filed Critical スージョウ レキン セミコンダクター カンパニー リミテッド
Publication of JP2019511126A publication Critical patent/JP2019511126A/ja
Publication of JP2019511126A5 publication Critical patent/JP2019511126A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/8506—Containers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H10H20/853—Encapsulations characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/855—Optical field-shaping means, e.g. lenses
    • H10H20/856—Reflecting means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls

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  • Led Device Packages (AREA)
JP2018549891A 2016-03-22 2017-03-22 発光素子およびこれを備えた発光モジュール Expired - Fee Related JP6985286B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
KR1020160033927A KR102566046B1 (ko) 2016-03-22 2016-03-22 발광 소자 및 이를 구비한 발광 모듈
KR10-2016-0033927 2016-03-22
KR1020160033931A KR102628791B1 (ko) 2016-03-22 2016-03-22 발광 소자 및 이를 구비한 발광 모듈
KR10-2016-0033931 2016-03-22
PCT/KR2017/003080 WO2017164644A1 (ko) 2016-03-22 2017-03-22 발광 소자 및 이를 구비한 발광 모듈

Publications (3)

Publication Number Publication Date
JP2019511126A JP2019511126A (ja) 2019-04-18
JP2019511126A5 JP2019511126A5 (https=) 2020-04-16
JP6985286B2 true JP6985286B2 (ja) 2021-12-22

Family

ID=59899560

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018549891A Expired - Fee Related JP6985286B2 (ja) 2016-03-22 2017-03-22 発光素子およびこれを備えた発光モジュール

Country Status (4)

Country Link
US (1) US10818822B2 (https=)
JP (1) JP6985286B2 (https=)
CN (1) CN108886079B (https=)
WO (1) WO2017164644A1 (https=)

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KR102560908B1 (ko) * 2018-07-20 2023-07-31 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광소자 패키지 및 광원 모듈
JP7152666B2 (ja) * 2019-03-08 2022-10-13 日亜化学工業株式会社 発光装置及びその製造方法
US11551963B2 (en) * 2020-02-14 2023-01-10 Advanced Semiconductor Engineering, Inc. Semiconductor device package and method of manufacturing the same
KR20230020619A (ko) * 2021-08-03 2023-02-13 삼성전자주식회사 반도체 자외선 발광소자 패키지

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JP2002299698A (ja) * 2001-03-30 2002-10-11 Sumitomo Electric Ind Ltd 発光装置
KR100714602B1 (ko) 2005-09-29 2007-05-07 삼성전기주식회사 발광다이오드 패키지
JP2007234779A (ja) * 2006-02-28 2007-09-13 Toshiba Lighting & Technology Corp 発光装置
WO2007108616A1 (en) * 2006-03-17 2007-09-27 Seoul Semiconductor Co., Ltd. Side-view light emitting diode package having a reflector
EP2065931A4 (en) * 2006-08-22 2013-02-27 Mitsubishi Chem Corp SEMICONDUCTOR ELEMENT ELEMENT, LIQUID TO FORM A SEMICONDUCTOR COMPONENT member, PROCESS FOR PRODUCING A SEMICONDUCTOR COMPONENT link and FLUID TO FORM A SEMICONDUCTOR COMPONENT member USING THE METHOD, FLUORESCENT COMPOSITION, SEMICONDUCTOR LIGHT ELEMENT, ILLUMINATION DEVICE AND IMAGE DISPLAY DEVICE
KR100757826B1 (ko) * 2006-09-29 2007-09-11 서울반도체 주식회사 측면 발광 다이오드 패키지
KR101488448B1 (ko) * 2007-12-06 2015-02-02 서울반도체 주식회사 Ｌｅｄ 패키지 및 그 제조방법
JP2009176798A (ja) * 2008-01-22 2009-08-06 Citizen Electronics Co Ltd 発光装置
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JP5180690B2 (ja) * 2008-06-06 2013-04-10 アピックヤマダ株式会社 Ｌｅｄチップ実装用基板の製造方法、ｌｅｄチップ実装用基板のモールド金型、ｌｅｄチップ実装用基板、及び、ｌｅｄ
TW201138029A (en) * 2010-03-26 2011-11-01 Kyocera Corp Light-reflecting substrate, substrate which can be mounted in light-emitting element, light-emitting device, and process for production of substrate which can be mounted in light-emitting element
JP2011253970A (ja) * 2010-06-03 2011-12-15 Panasonic Corp 光半導体装置用パッケージおよびその製造方法
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KR101693642B1 (ko) * 2010-12-21 2017-01-17 삼성전자 주식회사 발광소자 패키지 제조방법
KR20120122735A (ko) 2011-04-29 2012-11-07 엘지이노텍 주식회사 자외선 발광 다이오드를 이용한 발광소자 패키지
JP5968674B2 (ja) * 2011-05-13 2016-08-10 エルジー イノテック カンパニー リミテッド 発光素子パッケージ及びこれを備える紫外線ランプ
KR101933022B1 (ko) 2011-05-13 2018-12-27 엘지이노텍 주식회사 발광 소자 패키지 및 이를 구비한 자외선 램프
EP2711995B1 (en) * 2011-05-16 2019-06-26 Nichia Corporation Light-emitting device and method for manufacturing same
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JP5952569B2 (ja) 2012-01-25 2016-07-13 日本カーバイド工業株式会社 発光素子搭載用基板、及び、それを用いた発光装置、及び、発光素子搭載用基板の製造方法
KR101430178B1 (ko) 2013-08-14 2014-08-13 (주)네오빛 사이드뷰 led 패키지
KR101469237B1 (ko) * 2013-08-21 2014-12-09 주식회사 레다즈 발광다이오드 패키지
KR20150037216A (ko) 2013-09-30 2015-04-08 서울바이오시스 주식회사 발광 디바이스
US10825970B2 (en) * 2016-02-26 2020-11-03 Epistar Corporation Light-emitting device with wavelength conversion structure

Also Published As

Publication number Publication date
CN108886079B (zh) 2022-07-19
CN108886079A (zh) 2018-11-23
WO2017164644A1 (ko) 2017-09-28
JP2019511126A (ja) 2019-04-18
US20190103517A1 (en) 2019-04-04
US10818822B2 (en) 2020-10-27

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