JP6974986B2 - A method for preparing an embedded resin sample for electron microscope observation and a mold used for it. - Google Patents

A method for preparing an embedded resin sample for electron microscope observation and a mold used for it. Download PDF

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JP6974986B2
JP6974986B2 JP2017169305A JP2017169305A JP6974986B2 JP 6974986 B2 JP6974986 B2 JP 6974986B2 JP 2017169305 A JP2017169305 A JP 2017169305A JP 2017169305 A JP2017169305 A JP 2017169305A JP 6974986 B2 JP6974986 B2 JP 6974986B2
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JP2019045327A (en
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裕介 作田
俊輔 朝比奈
晶雄 礒野
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Jeol Ltd
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本発明は、電子顕微鏡観察用試料をイオンビーム加工装置を用いて作製する方法に関し、特に粉体の包埋樹脂試料を作製する方法に関する。 The present invention relates to a method for preparing a sample for electron microscope observation using an ion beam processing apparatus, and more particularly to a method for preparing a powder-embedded resin sample.

走査電子顕微鏡(SEM)、透過電子顕微鏡(TEM)等を用いて、粉体を構成する微小粒子の断面を観察することにより内部構造の解析がなされている。
微小粒子の断面を電子顕微鏡観察するための従来の方法が、特許文献1に記載されている。図 7(a)は、粉体の包埋樹脂試料を作製するために使用する型枠である。図 7(b)は、図 7(a)のLL断面を示した図である。図 7(b)に示すように、型枠の貫通孔C1に液状の樹脂と粉体との混合物を注いで、樹脂C2が固まるのを待つ。樹脂C2が固まった後、図 7(c)に示すように、粉体C3を含む樹脂C2を型枠から取り出し、点線C4で切断する。樹脂C2から切断された包埋樹脂試料C5は、図 7(d)のように、イオンビーム加工装置の試料台Dと遮蔽板Sに、挟まれて装着される。そして、遮蔽板Sから突き出た部分にイオンビームを当てられて、断面C6が形成される。
The internal structure is analyzed by observing the cross section of the fine particles constituting the powder using a scanning electron microscope (SEM), a transmission electron microscope (TEM), or the like.
Patent Document 1 describes a conventional method for observing a cross section of a fine particle with an electron microscope. FIG. 7A is a mold used for preparing a powder embedding resin sample. FIG. 7 (b) is a diagram showing an LL cross section of FIG. 7 (a). As shown in FIG. 7B, a mixture of a liquid resin and a powder is poured into the through hole C1 of the mold, and the resin C2 is waited for solidification. After the resin C2 has hardened, as shown in FIG. 7C, the resin C2 containing the powder C3 is taken out from the mold and cut along the dotted line C4. As shown in FIG. 7 (d), the embedded resin sample C5 cut from the resin C2 is sandwiched between the sample table D and the shielding plate S of the ion beam processing apparatus and mounted. Then, an ion beam is applied to the portion protruding from the shielding plate S to form the cross section C6.

特開2013−167525JP 2013-167525

しかしながら、特許文献1に記載の技術では、粉体を包埋した樹脂を型枠から取り出し、観察部位を選択して切断し、イオンビーム加工装置の試料台と遮蔽板で挟む必要があり、小さな包埋樹脂試料に対して繊細な加工作業を行わねばならず、作業に熟練を要する。また、イオンビーム加工装置で包埋樹脂試料の表面を加工する際に、熱に弱い粉体の場合には、加工熱による融解や変形等のダメージが試料に発生してしまう恐れがあった。 However, in the technique described in Patent Document 1, it is necessary to take out the resin in which the powder is embedded from the mold, select and cut the observation site, and sandwich it between the sample table of the ion beam processing apparatus and the shielding plate, which is small. Delicate processing work must be performed on the embedding resin sample, and the work requires skill. Further, when the surface of the embedded resin sample is processed by the ion beam processing apparatus, if the powder is sensitive to heat, damage such as melting or deformation due to the processing heat may occur on the sample.

上記課題を解決し、本発明の目的を達成するため、本発明は、表面に有底の穴を形成したプレートを準備する工程と、
前記穴の開口部から穴の中に試料と樹脂の混合液を注いで固化させ、穴の中で包埋樹脂を作製する工程と、
穴の中に包埋樹脂を保持した前記プレートを切断し、包埋樹脂を保持した前記プレート断片を政策する工程と、
前記プレートの断面をイオンビーム加工装置に導入し、前記プレートの裏面方向から前記包埋樹脂にイオンビームを照射することにより、包埋樹脂の断面を研磨する工程と、
を備えたことを特徴とする。
In order to solve the above problems and achieve the object of the present invention, the present invention includes a step of preparing a plate having a bottomed hole on the surface and a step of preparing a plate.
A process of pouring a mixed solution of a sample and a resin into the hole from the opening of the hole and solidifying the mixture to prepare an embedded resin in the hole.
The process of cutting the plate holding the embedding resin in the hole and policy the plate fragment holding the embedding resin, and
A step of introducing the cross section of the plate into an ion beam processing apparatus and irradiating the embedding resin with an ion beam from the back surface direction of the plate to polish the cross section of the embedding resin.
It is characterized by being equipped with.

本発明によれば、型枠から包埋樹脂試料を取り出すことなく、加工作業および取付作業が行えるため、熟練を要することなく作業が可能となる。また、イオンビーム加工により包埋樹脂試料に発生した熱が型枠を介して放散されるため、熱によるダメージを低減させることができる。 According to the present invention, since the processing work and the mounting work can be performed without taking out the embedded resin sample from the mold, the work can be performed without requiring skill. Further, since the heat generated in the embedded resin sample by the ion beam processing is dissipated through the mold, the damage due to the heat can be reduced.

本実施形態に係る穴の開いたプレートを示した図である。It is a figure which showed the plate with a hole which concerns on this embodiment. 本実施形態に係るプレートの穴に樹脂と粉体の混合物を流し込んだ状態を示した図である。It is a figure which showed the state which the mixture of resin and powder was poured into the hole of the plate which concerns on this embodiment. 本実施形態に係るプレートの断面を示した図である。It is a figure which showed the cross section of the plate which concerns on this embodiment. 本実施形態に係る電子顕微鏡の観察用試料を回転研磨する模式図である。It is a schematic diagram which rotationally grinds the observation sample of the electron microscope which concerns on this embodiment. 本実施形態に係る電子顕微鏡の観察用試料の断面をイオンビームで加工する模式図である。It is a schematic diagram which a cross section of the observation sample of the electron microscope which concerns on this embodiment is processed by an ion beam. 本実施形態に係るプレートの穴に樹脂と粉体の混合物を流し込んだ状態を示した図である。It is a figure which showed the state which the mixture of resin and powder was poured into the hole of the plate which concerns on this embodiment. 従来例に係る試料作製の手順を示した図である。It is a figure which showed the procedure of the sample preparation which concerns on the conventional example.

以下、図面を用いて本発明の実施の形態について説明する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings.

実施例1
(1)準備
図 1に示すように、穴2が設けられたプレート1を型枠として用意する。
Example 1
(1) Preparation As shown in Fig. 1, a plate 1 provided with a hole 2 is prepared as a formwork.

プレート1には、シリコンウエハから直方体状に切り出されたシリコン基板が用いられる。プレート1の寸法は、例えば、厚さ1mm×幅4mm×奥行き8mmであり、穴2は、直径2mm程度の貫通孔である。 For the plate 1, a silicon substrate cut out in a rectangular parallelepiped shape from a silicon wafer is used. The dimensions of the plate 1 are, for example, 1 mm in thickness × 4 mm in width × 8 mm in depth, and the hole 2 is a through hole having a diameter of about 2 mm.

プレート1は、図 2に示すように、アルミ板3(封止体)の上に密着固定させられて、穴2の一方の開口部が塞がれる。その際に、プレート1の下面に接着剤を塗布して接着固着するのが好ましい。アルミ板3は、プレート1よりも薄い0.1mm程度の厚さである。 As shown in FIG. 2, the plate 1 is closely fixed on the aluminum plate 3 (sealing body), and one opening of the hole 2 is closed. At that time, it is preferable to apply an adhesive to the lower surface of the plate 1 to bond and fix the plate 1. The aluminum plate 3 is thinner than the plate 1 and has a thickness of about 0.1 mm.

(2)包埋
粉体と液状の樹脂との混合物が作成され、混合物が脱泡処理された状態でプレート1の穴2に注がれる。樹脂は、耐熱性のあるものが用いられる。樹脂が硬化するまで数時間放置することによって、粉体を樹脂に含ませた包埋樹脂4が作製される。穴2の内部で、包埋樹脂4は、アルミ板3とも穴2の内部側面とも密着して硬化している。
(2) A mixture of the embedded powder and the liquid resin is prepared, and the mixture is poured into the hole 2 of the plate 1 in a defoamed state. A heat-resistant resin is used. By leaving it for several hours until the resin is cured, the embedded resin 4 in which the powder is contained in the resin is produced. Inside the hole 2, the embedding resin 4 is in close contact with both the aluminum plate 3 and the inner side surface of the hole 2 and is cured.

(3)切断
図 2(a)に示すように、プレート1の上面Aには、穴2を分断する位置に、確認線5が、書き入れられる。確認線5に沿って切断器具を移動させることにより、包埋樹脂4を含んだプレート1とアルミ板3とを切断2分割すると、それぞれの分割片には、図 2(b)に示すように、包埋樹脂4の断面が露出している。切断器具には、バンドソーやロースピードカッターなどの金属を切断できる器具が用いられる。包埋樹脂4ごとプレート1とアルミ板3とを一体として切断しているので、包埋樹脂4とアルミ板3と密着させた状態を保つことができる。図 3に示した包埋樹脂4の断面には、粉体6が存在する。粉体6は、樹脂との密度の差により、樹脂全体が硬化したときには、プレート1の下面B側に沈殿している。以後、包埋樹脂4を含んだプレート1とアルミ板3とが、確認線5に沿って切断されたものを観察用試料7と呼ぶ。
(3) Cutting As shown in FIG. 2A, a confirmation line 5 is written on the upper surface A of the plate 1 at a position where the hole 2 is divided. By moving the cutting tool along the confirmation line 5, the plate 1 containing the embedding resin 4 and the aluminum plate 3 are cut and divided into two, and each divided piece is divided into two as shown in FIG. 2 (b). , The cross section of the embedding resin 4 is exposed. As the cutting tool, a tool capable of cutting metal such as a band saw or a low speed cutter is used. Since the plate 1 and the aluminum plate 3 are cut together with the embedding resin 4, the embedding resin 4 and the aluminum plate 3 can be kept in close contact with each other. The powder 6 is present in the cross section of the embedding resin 4 shown in FIG. Due to the difference in density from the resin, the powder 6 precipitates on the lower surface B side of the plate 1 when the entire resin is cured. Hereinafter, the plate 1 containing the embedding resin 4 and the aluminum plate 3 cut along the confirmation line 5 are referred to as an observation sample 7.

(4)機械研磨
図 4に示すように、観察用試料7の断面を研磨器の研磨面8に向けて、観察用試料7が研磨面8に対して垂直になるようにセットする。観察用試料7の断面が10um程度以下の凹凸になるまで研磨を行う。これは、イオンビーム加工装置による観察用試料7の断面の加工時に、観察用試料7の断面にある凹凸の影響によって生じるスジ状の加工痕を出現させないようにするためである。
(4) Mechanical polishing As shown in FIG. 4, the cross section of the observation sample 7 is set toward the polishing surface 8 of the grinder so that the observation sample 7 is perpendicular to the polishing surface 8. Polishing is performed until the cross section of the observation sample 7 has irregularities of about 10 um or less. This is to prevent the appearance of streak-shaped processing marks caused by the influence of the unevenness on the cross section of the observation sample 7 when the cross section of the observation sample 7 is processed by the ion beam processing apparatus.

(5)イオンビームによる断面処理
機械研磨終了後、観察用試料7は、イオンビーム加工装置で断面処理される。図 5は、イオンビーム加工装置の模式図である。イオンビーム加工装置は、真空チャンバー内で観察用試料7に向けてイオンビーム11を照射して、観察用試料7の断面処理をする機能を備えている。イオンビーム11は、真空チャンバー内でイオン銃10から発生し、2から6keV程度のエネルギーを持った状態で観察用試料7に照射される。
(5) Cross-section processing with an ion beam After the mechanical polishing is completed, the observation sample 7 is cross-sectioned with an ion beam processing apparatus. FIG. 5 is a schematic diagram of an ion beam processing apparatus. The ion beam processing apparatus has a function of irradiating the observation sample 7 with the ion beam 11 in the vacuum chamber to process the cross section of the observation sample 7. The ion beam 11 is generated from the ion gun 10 in the vacuum chamber and irradiates the observation sample 7 with an energy of about 2 to 6 keV.

観察用試料7は、図 5に示すように、アルミ板3がイオン銃側に向けられて、試料ホルダ14に取り付けられ、イオン銃10から発生するイオンビーム11の光軸12に対して垂直に配置される。そして、観察用試料7の切削する部分以外をイオンビームから覆い隠すように、遮蔽板13が観察用試料7の上に載せられる。イオンビームがアルミ板3側から観察用試料7および遮蔽板13に向けて照射されると、観察用試料7の遮蔽板13から露出した部分がアルミ板3と共に切削加工され、平滑化された断面が作成される。 As shown in FIG. 5, the observation sample 7 is attached to the sample holder 14 with the aluminum plate 3 facing the ion gun side, and is perpendicular to the optical axis 12 of the ion beam 11 generated from the ion gun 10. Be placed. Then, the shielding plate 13 is placed on the observation sample 7 so as to cover the portion other than the portion to be cut of the observation sample 7 from the ion beam. When the ion beam is irradiated from the aluminum plate 3 side toward the observation sample 7 and the shielding plate 13, the portion exposed from the shielding plate 13 of the observation sample 7 is machined together with the aluminum plate 3 to smooth the cross section. Is created.

イオン銃側に向けられたアルミ板3は、包埋樹脂4と密着していることによりイオンビームによる切削加工時に包埋樹脂4から発生する熱を効率よく吸収し遮蔽板13へ伝えて逃がす役割を果たし、プレート1は、切削加工時に発生する熱を試料ホルダ14に伝えて逃がす役割を果たす。このため、試料へ与える熱による融解や変形等のダメージを軽減することができる。アルミ板以外でも、一般的に熱伝導率が高く、イオンビームでの処理の際に、構成する物質の硬度の違いによってスジ状の加工痕が生じない素材を用いることが好ましく、例えば、アモルファスもしくは単結晶のシートを用いることができる。 The aluminum plate 3 facing the ion gun side is in close contact with the embedding resin 4, so that it efficiently absorbs the heat generated from the embedding resin 4 during cutting by the ion beam and transfers it to the shielding plate 13 to release it. The plate 1 serves to transfer the heat generated during cutting to the sample holder 14 and release it. Therefore, damage such as melting and deformation due to heat applied to the sample can be reduced. In addition to the aluminum plate, it is generally preferable to use a material that has high thermal conductivity and does not generate streak-like processing marks due to the difference in hardness of the constituent substances when treated with an ion beam, for example, amorphous or. A single crystal sheet can be used.

(6)観察
断面処理が行われた観察用試料7は、走査電子顕微鏡によって、粉体6が露出している箇所を観察される。
(6) Observation In the observation sample 7 subjected to the cross-sectional processing, the portion where the powder 6 is exposed is observed by a scanning electron microscope.

本発明では、プレートごと包埋樹脂を切断した後は、切断されたプレートを手で持って機械研磨作業、イオンビーム加工装置、走査電子顕微鏡へのセット及び取り出しができるので、型枠から取り出した包埋樹脂をそのまま取り扱わねばならなかった従来に比べ、試料の取扱いが容易になり、熟練を必要とせずに試料作製を行うことができる。 In the present invention, after cutting the embedding resin together with the plate, the cut plate can be held by hand for mechanical polishing work, setting on an ion beam processing device, and a scanning electron microscope, and taken out from the mold. Compared with the conventional method in which the embedding resin had to be handled as it is, the sample can be handled more easily, and the sample can be prepared without the need for skill.

実施例2
実施例1の変形例を説明する。図 6は、本実施形態に係る穴の開いたプレート1を示した斜視図である。実施例1と同様に、プレート1には、シリコンウエハから直方体状に切り出されたシリコン基板が用いられる。
Example 2
A modified example of the first embodiment will be described. FIG. 6 is a perspective view showing a plate 1 having a hole according to the present embodiment. Similar to the first embodiment, a silicon substrate cut out in a rectangular parallelepiped shape from a silicon wafer is used for the plate 1.

(1)準備
図 6(b)に示すように、直径2mm程度の有底の穴15が開けられたプレート1を用意する。プレート1の穴15は、例えば、フッ化水素と硝酸との混合液をプレート1の上面Aに滴下し、表面を溶して形成されるが、機械加工により形成しても良い。
(1) Preparation As shown in FIG. 6 (b), a plate 1 having a bottomed hole 15 having a diameter of about 2 mm is prepared. The hole 15 of the plate 1 is formed by, for example, dropping a mixed solution of hydrogen fluoride and nitric acid onto the upper surface A of the plate 1 and melting the surface, but it may be formed by machining.

図 6に示すように、実施例1で用いたアルミ板3(図 2参照)は除かれている。穴15の底の部分のシリコン基板は、実施例1のアルミ板3同様に、イオンビームによる切削加工時に包埋樹脂から発生する熱を吸収し、遮蔽板へ伝えて逃がす役割を果たす。 As shown in FIG. 6, the aluminum plate 3 (see FIG. 2) used in the first embodiment is excluded. Similar to the aluminum plate 3 of the first embodiment, the silicon substrate at the bottom of the hole 15 plays a role of absorbing heat generated from the embedded resin during cutting by an ion beam and transmitting it to a shielding plate to release it.

(2)包埋
実施例1と同様に、粉体を樹脂に含ませた包埋樹脂4が作製される(図 6)。穴15の内部で、包埋樹脂4は、穴15の内部側面と密着して硬化している。
(2) Embedding In the same manner as in Example 1, an embedding resin 4 in which powder is contained in a resin is produced (FIG. 6). Inside the hole 15, the embedding resin 4 is in close contact with the inner side surface of the hole 15 and is cured.

(3)割断(切断)
図 6(a)に示すように、確認線5として、プレート1の上面Aには、穴15を分断する位置に、切り込み16が入れられる。包埋樹脂4を含んだプレート1が、液体窒素中に入れられて、切り込み16に沿って割断2分割されると、それぞれの割断片には、図 6(b)に示すように、包埋樹脂4の断面が露出している。
(3) Cutting (cutting)
As shown in FIG. 6A, as a confirmation line 5, a notch 16 is made in the upper surface A of the plate 1 at a position where the hole 15 is divided. When the plate 1 containing the embedding resin 4 was placed in liquid nitrogen and divided into two pieces along the notch 16, each piece was embedded in each piece as shown in FIG. 6 (b). The cross section of the resin 4 is exposed.

実施例1と同様に、図 6(b)に示した包埋樹脂4の断面には、粉体6が存在する。粉体は、樹脂との密度の差により、樹脂全体が硬化したときには、プレート1の下面B側に沈殿している。以後、包埋樹脂4を含んだプレート1が割断されたものを観察用試料7と呼ぶ。 Similar to Example 1, the powder 6 is present in the cross section of the embedding resin 4 shown in FIG. 6 (b). Due to the difference in density from the resin, the powder precipitates on the lower surface B side of the plate 1 when the entire resin is cured. Hereinafter, the cut plate 1 containing the embedding resin 4 is referred to as an observation sample 7.

(4)機械研磨
実施例1と同様に、観察用試料7の断面を機械研磨する。
(4) Mechanical polishing Similar to Example 1, the cross section of the observation sample 7 is mechanically polished.

前述の(3)割断において、包埋樹脂4がうまく割れずに、包埋樹脂4が分割されたプレート1の一方の断片にくっついてしまい、プレート1の割断面から大幅にはみ出す場合がある。この場合には、機械研磨で割断面から大幅にはみ出し部分の包埋樹脂4を研磨し、その後、プレート1の割断面と包埋樹脂4とが平滑となるように、機械研磨をすればよい。 In the above-mentioned (3) splitting, the embedding resin 4 may not be broken well and the embedding resin 4 may stick to one fragment of the divided plate 1 and greatly protrude from the split cross section of the plate 1. In this case, the embedding resin 4 in the portion that greatly protrudes from the fractured surface may be polished by mechanical polishing, and then mechanical polishing may be performed so that the fractured surface of the plate 1 and the embedding resin 4 are smooth. ..

(5)イオンビームによる断面処理
機械研磨終了後、観察用試料7は、イオンビーム加工装置で断面処理される。観察用試料7は、プレート1の下面Bがイオン銃側に向けられて、試料ホルダ14に取り付けられ、イオン銃10から発生するイオンビーム11の光軸12に対して垂直に配置される。そして、実施例1同様に、観察用試料7の切削する部分以外を遮蔽板13で覆い隠すように遮蔽板13が観察用試料7の上に載せられる。イオンビームがプレート1の下面B側から観察用試料7および遮蔽板13に向けて照射されると、観察用試料7の遮蔽板13から露出した部分がプレート1の下面Bと共に切削加工され、平滑化された断面が作製される。
(5) Cross-section processing with an ion beam After the mechanical polishing is completed, the observation sample 7 is cross-sectioned with an ion beam processing apparatus. The observation sample 7 is attached to the sample holder 14 with the lower surface B of the plate 1 facing the ion gun side, and is arranged perpendicular to the optical axis 12 of the ion beam 11 generated from the ion gun 10. Then, similarly to the first embodiment, the shielding plate 13 is placed on the observation sample 7 so as to cover the portion other than the portion to be cut of the observation sample 7 with the shielding plate 13. When the ion beam is irradiated from the lower surface B side of the plate 1 toward the observation sample 7 and the shielding plate 13, the portion exposed from the shielding plate 13 of the observation sample 7 is cut and smoothed together with the lower surface B of the plate 1. A modified cross section is produced.

イオン銃側に向けられた下面Bは、熱伝導率の高いシリコンであり、包埋樹脂4と密着していることにより、イオンビームによる切削加工時に包埋樹脂から発生する熱を効率よく吸収し遮蔽板13へ伝えて逃がす役割を果たす。このため、試料へ与える熱による融解や変形等のダメージを軽減することができる。また、シリコン基板以外でも、一般的に熱伝導率が高く、イオンビームでの処理の際に、構成する物質の硬度の違いによってスジ状の加工痕が生じない素材を用いることが好ましく、例えば、アモルファスもしくは単結晶のプレートを用いることができる。 The lower surface B facing the ion gun side is silicon having high thermal conductivity, and because it is in close contact with the embedding resin 4, it efficiently absorbs the heat generated from the embedding resin during cutting by the ion beam. It plays a role of transmitting to the shielding plate 13 and letting it escape. Therefore, damage such as melting and deformation due to heat applied to the sample can be reduced. In addition to silicon substrates, it is preferable to use a material that generally has high thermal conductivity and does not generate streak-like processing marks due to differences in the hardness of constituent substances during treatment with an ion beam, for example. Amorphous or single crystal plates can be used.

(6)観察
実施例1同様に、断面処理が行われた観察用試料7は、走査電子顕微鏡によって、粉体が露出している箇所を観察される。
(6) Observation Similarly to Example 1, the observation sample 7 subjected to the cross-section processing is observed with a scanning electron microscope at a portion where the powder is exposed.

プレート1、アルミ板3、包埋樹脂4、粉体6、観察用試料7、研磨面8、遮蔽板13 Plate 1, aluminum plate 3, embedding resin 4, powder 6, observation sample 7, polished surface 8, shielding plate 13

Claims (5)

表面に有底の穴を形成したプレートを準備する工程と、
前記穴の開口部から穴の中に試料と樹脂の混合液を注いで固化させ、穴の中で包埋樹脂を作製する工程と、
穴の中に包埋樹脂を保持した前記プレートを切断し、包埋樹脂を保持した前記プレート断片を作製する工程と、
前記プレートの断面をイオンビーム加工装置に導入し、前記プレートの裏面方向から前記包埋樹脂にイオンビームを照射することにより、包埋樹脂の断面を研磨する工程と、
を備える電子顕微鏡観察用の包埋樹脂試料の作製方法。
The process of preparing a plate with a bottomed hole on the surface and
A process of pouring a mixed solution of a sample and a resin into the hole from the opening of the hole and solidifying the mixture to prepare an embedded resin in the hole.
A step of cutting the plate holding the embedding resin in the hole to prepare the plate fragment holding the embedding resin, and
A step of introducing the cross section of the plate into an ion beam processing apparatus and irradiating the embedding resin with an ion beam from the back surface direction of the plate to polish the cross section of the embedding resin.
A method for preparing an embedded resin sample for electron microscope observation.
前記包埋樹脂の断面を研磨する工程において、前記イオンビーム加工装置に導入されたプレート断片には、前記プレートの裏面側にイオンビームの前記包埋樹脂への照射を部分的に遮る遮蔽板が配置され、イオンビームは前記遮蔽板と前記包埋樹脂にまたがって照射される請求項1記載の電子顕微鏡観察用の包埋樹脂試料の作製方法。 In the step of polishing the cross section of the embedded resin, the plate fragment introduced into the ion beam processing apparatus has a shielding plate on the back surface side of the plate that partially blocks the irradiation of the ion beam to the embedded resin. The method for producing an embedded resin sample for electron microscope observation according to claim 1, wherein the ion beam is arranged and irradiated over the shielding plate and the embedded resin. 前記プレートに切断位置を示す確認線又は切り込みを設ける工程を更に備える請求項1又は2記載の電子顕微鏡観察用の包埋樹脂試料の作製方法。 The method for producing an embedded resin sample for electron microscope observation according to claim 1 or 2, further comprising a step of providing a confirmation line or a notch indicating a cutting position on the plate. 前記プレートの有底の穴は、貫通孔を有するプレートの一方の面に封止体を取り付け、貫通孔の一方の開口部を封止体により塞ぐことにより形成される請求項1乃至3のいずれかに記載の電子顕微鏡観察用の包埋樹脂試料の作製方法。 Any of claims 1 to 3, wherein the bottomed hole of the plate is formed by attaching a sealing body to one surface of a plate having a through hole and closing one opening of the through hole with the sealing body. A method for preparing an embedded resin sample for observation with an electron microscope described in Crab. 前記封止体は、金属素材、単結晶素材またはアモルファス素材で構成される請求項4記載の電子顕微鏡観察用の包埋樹脂試料の作製方法。 The method for producing an embedded resin sample for electron microscope observation according to claim 4, wherein the sealed body is made of a metal material, a single crystal material, or an amorphous material.
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