TWI770324B - The method of dividing the workpiece - Google Patents
The method of dividing the workpiece Download PDFInfo
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- TWI770324B TWI770324B TW107144521A TW107144521A TWI770324B TW I770324 B TWI770324 B TW I770324B TW 107144521 A TW107144521 A TW 107144521A TW 107144521 A TW107144521 A TW 107144521A TW I770324 B TWI770324 B TW I770324B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/38—Removing material by boring or cutting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/56—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26 semiconducting
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Abstract
[課題]提供一種被加工物的分割方法,其可以防止相鄰的晶片的角部的摩擦,而防止該晶片的破損。 [解決手段]一種分割方法,是將具備第1面及第2面之板狀的被加工物分割成複數個晶片,該分割方法具備:樹脂層被覆步驟,在第1面被覆會藉由外在刺激而硬化的樹脂並使其硬化;框架單元形成步驟,形成框架單元,該框架單元是將被加工物隔著樹脂層貼附在已貼附於環狀框架的黏著膠帶上而形成;分割起點形成步驟,從第2面照射對框架單元的被加工物具有穿透性之波長的雷射光線,以在被加工物的內部形成分割起點;以及割斷步驟,將被加工物的第2面側載置於具備按壓刀刃的分斷裝置的支撐台,並且以已沿著該分割起點定位的按壓刀刃,隔著黏著膠帶及樹脂層來按壓被加工物,而以分割起點作為起點將被加工物割斷。[Problem] To provide a method for dividing a workpiece, which can prevent the rubbing of the corners of adjacent wafers and prevent the breakage of the wafers. [Solution] A dividing method for dividing a plate-shaped workpiece having a first surface and a second surface into a plurality of wafers, the dividing method comprising: a step of coating a resin layer in which the coating on the first surface is carried out by external The resin is stimulated and hardened and hardened; the frame unit forming step is to form a frame unit, which is formed by attaching the workpiece to the adhesive tape attached to the ring frame through the resin layer; dividing The starting point forming step is to irradiate the laser light with a wavelength that is penetrating to the workpiece of the frame unit from the second surface, so as to form a dividing starting point inside the workpiece; and the cutting step is to separate the second surface of the workpiece. The side is placed on a support base equipped with a cutting device that presses the blade, and the press blade positioned along the dividing starting point presses the workpiece through the adhesive tape and the resin layer, and the workpiece is processed with the dividing starting point as the starting point. Things cut off.
Description
發明領域 本發明是有關於一種將板狀的被加工物分割成複數個晶片之被加工物的分割方法。FIELD OF THE INVENTION The present invention relates to a method for dividing a plate-shaped workpiece into a plurality of wafers.
發明背景 一般而言,所進行的是將形成藍寶石或SiC(碳化矽)、玻璃等光元件的光元件晶圓(被加工物)分割成一個個的元件晶片。在將此種晶圓分割成一個個的晶片的情況下,已知有下述方法:對晶圓照射雷射光線,而在晶圓的內部形成切割起點之後,將分斷裝置的按壓刀刃沿著分割起點定位,並以此按壓刀刃對晶圓的其中一面進行按壓來分割(也稱為割斷)該晶圓(參照例如專利文獻1、專利文獻2)。 先前技術文獻 專利文獻Background of the Invention Generally, an optical element wafer (object to be processed) on which optical elements such as sapphire, SiC (silicon carbide), and glass are formed is divided into individual element wafers. In the case of dividing such a wafer into individual wafers, there is known a method in which a laser beam is irradiated on the wafer to form a cutting starting point inside the wafer, and then a pressing blade edge of a dividing device is The wafer is positioned at the starting point of division, and one side of the wafer is pressed with this pressing blade to divide (also referred to as dicing) the wafer (see, for example,
專利文獻1:日本專利特開2012-146744號公報 專利文獻2:日本專利特開2017-073443號公報Patent Document 1: Japanese Patent Laid-Open No. 2012-146744 Patent Document 2: Japanese Patent Laid-Open No. 2017-073443
發明概要 發明欲解決之課題 然而,在以往的方法中,因為藉由分斷裝置將晶圓割斷之時,會使相鄰的晶片中的上述其中一面側的角部互相接近,所以恐有導致這些角部接觸而摩擦之虞。SUMMARY OF THE INVENTION PROBLEM TO BE SOLVED BY THE INVENTION However, in the conventional method, when the wafer is cut by the cutting device, the corners on the one side of the adjacent wafers are brought close to each other, which may cause There is a risk of friction between these corners.
本發明是有鑒於上述而作成的發明,其目的在於提供一種被加工物的分割方法,其可以防止相鄰的晶片的角部的摩擦,而可以防止該晶片的破損。 用以解決課題之手段The present invention has been made in view of the above, and an object of the present invention is to provide a method for dividing a workpiece, which can prevent the rubbing of the corners of adjacent wafers and prevent the wafers from being damaged. means of solving problems
為了解決上述之課題並達成目的,本發明是一種被加工物的分割方法,其是將具備第1面、及與該第1面相反側的第2面之板狀的被加工物分割成複數個晶片,該被加工物的分割方法具備: 樹脂層形成步驟,在該被加工物的該第1面被覆會藉由外在刺激而硬化的樹脂,並且對所被覆之該樹脂給予外在刺激來使其硬化; 框架單元形成步驟,形成框架單元,該框架單元是將該被加工物隔著該樹脂層貼附在外周緣已貼附於該環狀框架的黏著膠帶上而形成; 分割起點形成步驟,從該第2面照射對該框架單元的該被加工物具有穿透性之波長的雷射光線,以在該被加工物的內部形成分割起點;以及 割斷步驟,將該被加工物的該第2面側載置於具備分斷用的按壓刀刃之分斷裝置的支撐台,並且以已沿著該分割起點定位的該按壓刀刃,隔著該黏著膠帶及該樹脂層來按壓該被加工物,而以該分割起點作為起點將該被加工物割斷,且以已硬化的該樹脂層防止進行按壓而被割斷之晶片的角部摩擦之情形。In order to solve the above-mentioned problems and achieve the object, the present invention is a method for dividing a workpiece, which divides a plate-shaped workpiece having a first surface and a second surface opposite to the first surface into a plurality of pieces. A wafer, the method for dividing the workpiece includes: a resin layer forming step of covering the first surface of the workpiece with a resin that is hardened by an external stimulus, and applying an external stimulus to the covered resin to harden it; a frame unit forming step, to form a frame unit, the frame unit is formed by attaching the workpiece to the adhesive tape whose outer periphery has been attached to the annular frame through the resin layer; forming a division starting point a step of irradiating a laser light of a wavelength having penetrability to the workpiece of the frame unit from the second surface, so as to form a dividing starting point inside the workpiece; and a cutting step, the The second surface side is placed on a support base of a cutting device provided with a pressing blade for cutting, and the pressing blade positioned along the dividing starting point presses the quilt through the adhesive tape and the resin layer. The workpiece is cut with the starting point of division as the starting point, and the cured resin layer prevents the corners of the cut wafer from being rubbed by pressing.
根據此構成,可藉由在成為按壓面的第1面上被覆會藉由外在刺激而硬化的樹脂,並且在此樹脂硬化之後,按壓樹脂層側而將被加工物割斷。因此,可以藉由在割斷之時使設置在相鄰的晶片的樹脂層彼此接觸,以抑制該晶片中的第1面側的角部的接觸,而可以防止晶片伴隨於此角部的摩擦的破損。According to this structure, the to-be-processed object can be cut|disconnected by covering the 1st surface which becomes a pressing surface with the resin which hardens by an external stimulus, and after this resin hardening, pressing the resin layer side. Therefore, by bringing the resin layers provided on the adjacent wafers into contact with each other at the time of cutting, the contact of the corner portion on the first surface side in the wafer can be suppressed, and the wafer can be prevented from rubbing against the corner portion. damaged.
在此構成中,亦可在該被加工物的該第1面上具備凹凸,該凹凸是成為構成元件的構造體。根據此構成,因為讓會藉由外在刺激而硬化的樹脂被覆凹凸,所以可以在割斷被加工物100之時,藉由分斷裝置的按壓刀刃按壓已硬化的樹脂層,以防止凹凸與按壓刀刃的接觸,而保護凹凸。In this configuration, the first surface of the workpiece may be provided with concavities and convexities, and the concavities and convexities are structures that serve as constituent elements. According to this configuration, since the resin layer that is hardened by external stimuli is covered with the concavities and convexities, when the
又,亦可為該分割起點是由從該第2面朝向該第1面延伸之細孔及屏護該細孔的非晶質所構成的屏護通孔。根據此構成,可以藉由以屏護通孔作為分割起點,而容易地將被加工物分割成複數個晶片。In addition, the dividing starting point may be a shielding through hole formed of a thin hole extending from the second surface toward the first surface and an amorphous material shielding the thin hole. According to this configuration, the workpiece can be easily divided into a plurality of wafers by using the shield through hole as the dividing starting point.
又,亦可在實施該割斷步驟之後,具備樹脂去除步驟,該樹脂去除步驟是將該樹脂加熱使其軟化而從該被加工物去除。根據此構成,可以容易地將會藉由外在刺激而硬化的樹脂層容易地從被加工物的第1面去除。 發明效果Moreover, after this cutting|disconnection process is implemented, you may have a resin removal process which heats and softens this resin, and may remove it from this to-be-processed object. According to this structure, the resin layer hardened by an external stimulus can be easily removed from the 1st surface of a to-be-processed object. Invention effect
根據本發明,可藉由在成為按壓面的第1面上被覆會藉由外在刺激而硬化的樹脂,並且在此樹脂硬化之後按壓樹脂層側,而將被加工物割斷。因此,可以藉由在割斷之時設置在相鄰的晶片的樹脂層彼此接觸,而抑制該晶片中的第1面側的角部的接觸,並且可以防止晶片伴隨於此角部的摩擦的破損。According to this invention, the to-be-processed object can be cut|disconnected by coating the resin which hardens by an external stimulus on the 1st surface which becomes a pressing surface, and pressing the resin layer side after this resin hardening. Therefore, when the resin layers provided on the adjacent wafers come into contact with each other at the time of slicing, the contact of the corner portion on the first surface side in the wafer can be suppressed, and the wafer can be prevented from being damaged due to friction of the corner portion. .
用以實施發明之形態 針對用於實施本發明之形態(實施形態),參照圖式並且詳細地進行說明。本發明並非因以下的實施形態所記載之內容而受到限定之發明。又,在以下所記載之構成要素中,包含所屬技術領域中具有通常知識者可輕易設想得到的或實質上是相同的構成要素。此外,以下所記載之構成是可適當組合的。又,在不脫離本發明之要旨的範圍內,可進行各種構成之省略、置換或變更。MODE FOR CARRYING OUT THE INVENTION The form (embodiment) for carrying out the present invention will be described in detail with reference to the drawings. The present invention is not limited by the contents described in the following embodiments. In addition, the constituent elements described below include those that can be easily assumed by those skilled in the art or that are substantially the same. In addition, the configurations described below can be appropriately combined. In addition, omissions, substitutions, or changes of various configurations can be made without departing from the gist of the present invention.
圖1是顯示以本實施形態之被加工物的分割方法所分割的被加工物之構成例的立體圖。圖2是顯示分割圖1的被加工物所形成之元件晶片之構成例的立體圖。被加工物100是以例如玻璃、藍寶石、碳化矽等作為母材的光元件晶圓,且在本實施形態中為玻璃基板。如圖1所示,被加工物100是具備正面100A(第1面)、及此正面100A的相反側之面即背面100B(第2面)的矩形形狀的板體。被加工物100的形狀並不限於矩形形狀,也可以是圓形。藉由將此被加工物100在互相正交的X軸方向及Y軸方向上分別分割成複數個,以形成圖2所示的元件晶片(晶片)110。FIG. 1 is a perspective view showing a configuration example of a workpiece divided by the method for dividing a workpiece according to the present embodiment. FIG. 2 is a perspective view showing a configuration example of a device wafer formed by dividing the workpiece of FIG. 1 . The
元件晶片110是構成光元件晶片的構成,如圖2所示,形成為大致四角柱形狀,並且在上表面側具備四角錐形狀的突部111。具體而言,元件晶片110是具備矩形形狀的底面110A、4個側面110B、以及將此側面110B與頂點110C連繫起來的4個傾斜面110D而形成。以此頂點110C及傾斜面110D所形成的四角錐形狀的突部111是作為例如透鏡(構造體)而發揮功能,該透鏡是構成作為光元件晶片的元件晶片110。再者,在本實施形態中,雖然器件晶片110的突部111是形成為具有頂點110C的四角錐形狀,但亦可形成為具有平坦部的四角錐台形狀。The
接著,針對將上述之板狀的被加工物100分割成元件晶片的分割方法進行說明。圖3是顯示被加工物的分割方法之順序的流程圖。如圖3所示,被加工物100的分割方法是具備下述步驟而構成:凹凸形成步驟S1、樹脂層被覆步驟(樹脂層形成步驟)S2、框架單元形成步驟S3、分割起點形成步驟S4、割斷步驟S5以及樹脂層去除步驟S6。接著,針對這些的各個步驟進行說明。Next, a division method for dividing the above-mentioned plate-
[凹凸形成步驟S1] 圖4是在被加工物的正面形成凹凸部之構成例的局部截面圖。在被加工物100的正面100A是形成圖4所示的凹凸部(凹凸)120。在本實施形態中,凹凸部120是藉由分別在X軸方向及Y軸方向上以規定間隔P並設的複數個溝部121而構成。此溝部121是以頂部121A、底部121B以及傾斜面121C來形成為V字形。凹凸部120的形成是使用切割單元10來進行。被加工物100是在背面100B貼附保護膠帶101,並且透過此保護膠帶101而保持在保持工作台(圖未示)。此保持工作台是構成為可與水平面(XY平面)平行地旋轉,並且具備有移動機構(圖未示),該移動機構是可相對於切割單元10而分別在加工進給方向(X軸方向)及分度進給方向(Y軸方向)上相對地移動之機構。[Concavo-convex forming step S1 ] FIG. 4 is a partial cross-sectional view of a configuration example in which concavo-convex portions are formed on the front surface of a workpiece. On the
切割單元10具備切割刀片13,該切割刀片13是裝設在繞著軸心11而旋轉的旋轉主軸12上。切割刀片13是形成為圓板形,並且在周緣部設有形成為環狀的切割刀刃14。此切割刀刃14是相對鉛直線具有規定的刀刃角度θ的V字形刀刃。切割單元10是藉由升降機構(圖未示)使切割刀片13相對於被加工物100在鉛直方向(Z軸方向)上進退自如地移動。因此,可藉由一邊使被加工物100(保持工作台)朝加工進給方向移動,一邊使切割刀片13切入被加工物100,而在被加工物100上形成朝加工進給方向延伸之V字形的溝部121。又,可以藉由使切割單元10上升,並且使被加工物100(保持工作台)相對於切割刀片13朝分度進給方向移動相當於規定間隔P,而如圖4所示,形成以規定間隔P並設的複數個溝部121。此外,可藉由使被加工物100(保持工作台)旋轉90°,並在此狀態下形成在規定間隔P並設的複數個溝部121,而在被加工物100的正面100A形成凹凸部(凹凸)120。此凹凸部120的頂部121A是相當於分割成元件晶片110之時的頂點110C。再者,元件晶片110的突部111以及凹凸部120的形狀是表示一個例子之構成,而非受限於此之構成,因而亦可進行適當變更。The
[樹脂層被覆步驟S2] 接著,將形成有凹凸部120之被加工物100的正面100A側以樹脂層覆蓋。圖5是將被加工物的正面之已形成的凹凸部以液狀樹脂被覆之構成例的局部截面圖,圖6是使所被覆的液狀樹脂硬化而形成樹脂層之構成例的局部截面圖。被加工物100是露出藉由上述之切割加工而形成在正面100A側的凹凸部120。在以分斷裝置(後述)對在正面100A形成有凹凸部120的被加工物(玻璃基板)100進行分割(割斷)的情況下,恐有因為分斷裝置的按壓力而使凹凸部120損傷或者破損之虞。因此,以樹脂層130(圖6)被覆凹凸部120來保護凹凸部120。[Resin Layer Covering Step S2 ] Next, the
在形成樹脂層130之時,在本實施形態中,是在被加工物100的凹凸部120上配置樹脂供給噴嘴20,並且從此樹脂供給噴嘴20供給液狀樹脂131。液狀樹脂可使用具有硬化性的樹脂,例如可以使用DENKA股份有限公司製之TEMPLOC(註冊商標)。此TEMPLOC因為可以藉由紫外線照射(外在刺激)而在短時間內硬化,更可在毋須使用有機溶劑的情形下以浸泡於溫水中的作法簡單地從被覆對象去除,所以操作處理非常容易。When forming the
又,較理想的是,被加工物100是透過保護膠帶101保持在圖未示的旋轉台上。旋轉台是構成為可在已保持被加工物100的狀態下,使被加工物100朝周方向旋轉。所供給的液狀樹脂131是藉由伴隨於旋轉台之旋轉的離心力,而從被加工物100的中心朝徑方向外側擴散。因此,可將液狀樹脂131充填在形成於被加工物100的凹凸部120的溝部121,並且可以將被覆被加工物100的凹凸部120之液狀樹脂131的上表面調整成大致平坦。再者,由液狀樹脂131所進行之被加工物100的凹凸部120的被覆,除了藉由上述之旋轉台所進行的被覆以外,亦可將被加工物100收容在模框(圖未示),並將液狀樹脂131充填到模框的間隙。又,除了上述之外,亦可在藉由液狀樹脂131被覆凹凸部120之後,藉由隔著過透明的離型片材等,以表面為平坦的透明板按壓液狀樹脂131的上表面,以使該液狀樹脂131的上表面大致平坦化。此時,透明的離型片材及透明板宜使用以讓紫外線穿透的材質所形成的構件。Furthermore, it is preferable that the
接著,使液狀樹脂131硬化以形成樹脂層130。在本實施形態中,作為液狀樹脂131而使用的TEMPLOC,因為具有藉由紫外線照射(外在刺激)而硬化的特質,所以如圖6所示,可在被覆被加工物100的凹凸部120之液狀樹脂131之上配置紫外線照射燈21,並且從此紫外線照射燈21朝向液狀樹脂131照射紫外線22。藉此,可將液狀樹脂131硬化而形成樹脂層130。此樹脂層130的表面(上表面)130A是平坦地形成。Next, the
[框架單元形成步驟S3] 接著,使形成有樹脂層130的被加工物100保持在環狀框架115而形成框架單元117。圖7是顯示框架單元之構成例的立體圖。框架單元117具備環狀框架115、外周緣已貼附在此環狀框架115的黏著膠帶116、以及貼附在此黏著膠帶116的被加工物100。被加工物100是將貼附在背面100B側的保護膠帶101取下而成為背面100B露出的狀態,並且將此背面100B設成向上而隔著樹脂層130來貼附於黏著膠帶116。環狀框架115具有比被加工物100更大的開口115A,且將被加工物100保持在此開口115A內。[Frame Unit Forming Step S3 ] Next, the
[分割起點形成步驟S4] 接著,從背面100B照射對框架單元117的被加工物100具有穿透性之波長的雷射光線,以在被加工物100的內部形成屏護通孔140(分割起點)。圖8是顯示在被加工物的內部形成屏護通孔的雷射加工裝置之構成例的立體圖。圖9是示意地顯示形成屏護通孔的被加工物之內部構造的局部截面圖。圖10是示意地顯示屏護通孔之構造的截面圖,圖11是示意地顯示屏護通孔之構造的立體圖。[Segmentation starting point forming step S4] Next, a laser light having a wavelength having penetrability to the
屏護通孔140是如圖8所示,使用雷射加工裝置30而形成。雷射加工裝置30具備工作夾台31、雷射照射單元32以及拍攝單元(圖未示),該工作夾台31是保持框架單元117,該雷射照射單元32是對保持於此工作夾台31上的框架單元117的被加工物100照射雷射光線,該拍攝單元是對此被加工物100進行拍攝。工作夾台31是構成為吸引保持框架單元117。又,工作夾台31是以可和水平面(XY平面)平行地旋轉的方式構成,並且具備有移動機構(圖未示),該移動機構可相對於雷射照射單元32分別在加工進給方向(X軸方向)及分度進給方向(Y軸方向)上相對地移動。The shield through
雷射照射單元32具備振盪產生雷射光線的振盪器(圖未示)、及將藉由此振盪器所振盪產生的雷射光線聚光的聚光器32A。振盪器是因應於加工形態等,而可適當調整所振盪產生之雷射光線的頻率。聚光器32A是包含全反射鏡或聚光透鏡等而構成,該全反射鏡是將藉由振盪器所振盪產生之雷射光線的行進方向改變,該聚光透鏡是將雷射光線聚光。又,雷射照射單元32具備有聚光點位置調整設備(圖未示),該聚光點位置調整設備是用於調整藉由聚光器32A的聚光透鏡所聚光的雷射光線的聚光點位置。拍攝單元是由顯微鏡或CCD照相機等的光學設備所構成。The
在使用雷射加工裝置30以在被加工物100的內部形成屏護通孔140之時,首先是如圖8所示,將保持有框架單元117的工作夾台31朝加工進給方向移動,並且將被加工物100定位到拍攝單元的正下方。接著,使用拍攝單元,對形成在被加工物100的凹凸部120的溝部121(圖4)進行拍攝,以檢測是否已將此溝部121與加工進給方向(X軸方向)平行地定位。此時,在溝部121未與加工進給方向平行的情況下,是旋動調整工作夾台31來調整成使溝部121與加工進給方向成為平行。When using the
接著,將工作夾台31移動至雷射照射單元32的聚光器32A的下方,並且將在分度進給方向(Y軸方向)上以規定間隔P並設的溝部121(例如位於最邊緣的溝部121)的底部121B(圖4)定位到聚光器32A的正下方。然後,如圖9所示,作動聚光點位置調整設備(圖未示)以使聚光器32A於光軸方向上移動成將藉由聚光器32A的聚光透鏡所聚光的雷射光線32B的聚光點Q從被加工物100的背面100B定位到厚度方向之所期望的位置上。Next, the
如上述,若已將雷射光線32B的聚光點Q從被加工物100的背面100B定位到厚度方向之所期望的位置後,即可作動雷射照射單元32來從聚光器32A照射雷射光線32B而從定位在被加工物100的聚光點Q附近朝向正面100A形成屏護通孔140,其中該屏護通孔140是由細孔及屏護該細孔之非晶質所構成。也就是說,一邊從聚光器32A沿著溝部121(圖4)照射對被加工物100具有穿透性之波長的雷射光線32B,一邊使工作夾台31以規定的進給速度朝圖8及圖9的加工進給方向(X軸方向)移動。As described above, after the condensing point Q of the
再者,在形成屏護通孔140的情況下,設定有接著所示的加工條件。 波長 :1030nm 重複頻率 :40kHz 脈衝寬度 :10ps 平均輸出 :0.5W 光斑直徑 :φ5μm 加工進給速度 :400mm/秒 聚光透鏡的數值孔徑 :0.25In addition, when forming the shield through-
如圖10所示,在被加工物100的內部,是從雷射光線32B的聚光點Q附近使朝向正面而延伸的細孔141以及形成在該細孔141之周圍的非晶質142成長,而沿著對應於溝部121(圖4)的區域以規定的間隔(在圖示之實施形態中是10 μm的間隔(加工進給速度:400mm/秒)/(重複頻率:40kHz))形成非晶質的屏護通孔140。如圖11所示,屏護通孔140是由形成在中心之直徑d1為φ1μm左右的細孔141以及形成在該細孔141的周圍之直徑d2為φ10μm的非晶質142所構成,在本實施形態中,如圖10所示,是將互相鄰接的非晶質142彼此連接成相銜接而形成。As shown in FIG. 10 , inside the
像這樣,若沿著與溝部121(圖4)相對應的區域形成屏護通孔140後,即可使工作夾台31朝分度進給方向移動相當於與溝部121的間隔P相對應之距離,而沿著對應於此溝部121的區域形成屏護通孔140。如此進行而沿著與形成在規定方向上之全部的溝部121相對應的區域形成屏護通孔140後,即可使工作夾台31旋轉90°,並沿著與溝部121相對應的區域分別形成屏護通孔140,其中該溝部121是在相對於形成在上述規定方向上之溝部121正交之方向上所形成的溝部121。In this way, if the shield through
[割斷步驟S5] 接著,對被加工物100賦與外力,以沿著凹凸部120的溝部121將被加工物100割斷。圖12是示意地顯示對形成有屏護通孔的被加工物進行割斷之狀態的局部截面圖。在此圖12中,是將對被加工物100進行割斷之狀態誇張來描繪。被加工物100的割斷是使用圖12所示之分斷裝置40來進行。分斷裝置40具備支撐台41及按壓刀刃42,該支撐台41是支撐被加工物100,該按壓刀刃42是相對此支撐台41上下移動來對已支撐在該支撐台41的被加工物100賦與按壓力。支撐台41是以可與水平面平行地旋轉的方式構成,並且在按壓刀刃42的正下方形成有開口部41A。被加工物100是隔著貼附在背面100B側的保護片材108而載置於支撐台41。此時,如圖12所示,是以將形成在與溝部121相對應之區域的屏護通孔140定位在支撐台41的開口部41A的方式來載置。然後,藉由按壓刀刃42從貼附在樹脂層130的黏著膠帶116側沿著溝部121來按壓,其中該樹脂層130是被覆被加工物100之正面100A側的凹凸部120。其結果,在被加工物100上是藉由讓彎曲荷重沿著形成在與溝部121相對應之區域的屏護通孔140來作用,以在露出於被加工物100的背面100B的屏護通孔140側產生拉伸荷重。因此,如圖12所示,使形成在與溝部121相對應之區域的屏護通孔140成為分割起點而將被加工物100沿著溝部121割斷。[Cut-off step S5 ] Next, an external force is applied to the
然後,當沿著形成於規定方向之與溝部121相對應之區域所形成的屏護通孔140來割斷被加工物100後,即將支撐台41旋轉90°,以沿著在與上述規定方向正交之方向上延伸之與溝部121相對應之區域所形成的屏護通孔140進行上述之割斷作業。藉此,被加工物100可以分割成一個個的元件晶片110。Then, after cutting the
在本實施形態中,因為設置將形成在被加工物100之正面100A的凹凸部120被覆的樹脂層130,所以可以在割斷被加工物100之時,藉由分斷裝置40的按壓刀刃42按壓樹脂層130,來防止凹凸部120與按壓刀刃42的接觸,而保護凹凸部120。又,在割斷被加工物100之時,是使設置在相鄰之元件晶片110的樹脂層130彼此接觸。因此,可以抑制元件晶片110中的正面100A側的角部的接觸,而可以防止元件晶片110伴隨於此角部的摩擦的破損。In the present embodiment, since the
[樹脂層去除步驟S6] 接著,去除樹脂層130。圖13是從被加工物去除樹脂層之構成例的局部截面圖。圖14是已去除樹脂層的元件晶片之構成例的局部截面圖。在本實施形態中,作為樹脂層130而使用的TEMPLOC具有下述特質:藉由浸泡於溫水(例如80~90℃)中,而從被覆對象即被加工物100脫離。因此,如圖13所示,於已將貼附在樹脂層130的黏著膠帶116剝離後,將已割斷的被加工物100投入裝有溫水50的水槽(圖未示)。藉此,因為可將樹脂層130藉由加熱來軟化,所以可以容易地從被加工物100去除。從而,如圖14所示,可以獲得分割成一個個的元件晶片110。再者,因為這些元件晶片110是以保護片材108來集合成一體,所以可防止各元件晶片110凌亂地分散之情形。[Resin Layer Removal Step S6 ] Next, the
接著,另外針對實施形態進行說明。在上述之實施形態中,是在分割起點形成步驟S4中,針對在被加工物100的內部形成屏護通孔140作為分割起點的構成進行說明,但亦可形成改質層150來作為分割起點。圖15是示意地顯示形成改質層的被加工物之內部構造的局部截面圖,圖16是示意地顯示對形成有改質層的被加工物進行割斷之狀態的局部截面圖。在此圖16中,也是將對被加工物100進行割斷之狀態誇張來描繪。關於與上述之分割起點形成步驟S4、割斷步驟S6相同的內容,是附加相同的符號而省略說明。Next, another embodiment will be described. In the above-mentioned embodiment, in the step S4 of forming the starting point of division, the structure in which the shield through
如圖15所示,雷射加工裝置30是從被加工物100的背面100B側照射具有穿透性之波長的雷射光線32B,以在被加工物100的內部形成改質層150。改質層是指密度、折射率、機械強度或者其他的物理特性變得與周圍的母材不同之狀態的區域,可為例如熔融區域、裂隙區域、絕緣破壞區域、折射率變化區域、及混合了這些區域的區域。As shown in FIG. 15 , the
與形成上述之屏護通孔140的情況同樣,將工作夾台31移動至雷射照射單元32的聚光器32A的下方,並且將在分度進給方向(Y軸方向)上以規定間隔P並設的溝部121(例如位於最邊緣的溝部121)的底部121B(圖4)定位在聚光器32A的正下方。然後,如圖15所示,作動聚光點位置調整設備(圖未示)以使聚光器32A於光軸方向上移動成將藉由聚光器32A的聚光透鏡所聚光的雷射光線32B的聚光點定位在被加工物100的內部。In the same way as in the case of forming the above-mentioned screen guard through
當將雷射光線32B的聚光點定位在被加工物100的厚度方向的內部後,即作動雷射照射單元32來從聚光器32A照射雷射光線32B,而在被加工物100的內部形成改質層150。也就是說,一邊從聚光器32A沿著溝部121(圖4)照射對被加工物100具有穿透性之波長的雷射光線32B,一邊使工作夾台31以規定的進給速度朝圖15的加工進給方向(X軸方向)移動。藉此,可在被加工物100的內部沿著與溝部121(圖4)相對應之區域來形成改質層150。此改質層150是沿著全部之與溝部121相對應的區域而形成。再者,在本實施形態中,雖然是以改質層150為在被加工物100的厚度方向上形成有一層(一條)的例子進行了說明,但是在厚度方向上形成複數層(複數條)亦可。When the condensing point of the
接著,對被加工物100賦與外力,以沿著凹凸部120的溝部121對被加工物100進行割斷。如圖16所示,被加工物100是以將形成在與溝部121相對應之區域的屏護通孔140定位在分斷裝置40的支撐台41的開口部41A上的方式來載置。然後,藉由按壓刀刃42從貼附在樹脂層130的黏著膠帶116側沿著溝部121來按壓,其中該樹脂層130是被覆被加工物100之正面100A側的凹凸部120。其結果,在被加工物100上是藉由讓彎曲荷重沿著形成在與溝部121相對應之區域的改質層150來作用,以在被加工物100的背面100B側產生拉伸荷重。因此,如圖16所示,可從形成在與溝部121相對應之區域的改質層150朝厚度方向產生裂隙,且此改質層150成為分割起點而沿著溝部121割斷被加工物100。然後,當沿著在與全部之溝部121相對應之區域所形成的改質層150來對被加工物100進行割斷時,可將被加工物100分割成一個個的元件晶片110。Next, an external force is applied to the
在這個另外的實施形態中,也是因為設置將形成在被加工物100之正面100A的凹凸部120被覆的樹脂層130,所以可以在割斷被加工物100之時,藉由分斷裝置40的按壓刀刃42按壓樹脂層130,來防止凹凸部120與按壓刀刃42的接觸,而保護凹凸部120。又,在割斷被加工物100之時,是設置在相鄰之元件晶片110的樹脂層130彼此接觸。因此,可以抑制元件晶片110中的正面100A側的角部的接觸,而可以防止元件晶片110伴隨於此角部的摩擦的破損。Also in this other embodiment, since the
又,在上述實施形態中,因為分割起點是設為從被加工物100的背面100B朝向正面100A延伸之由細孔141及屏護該細孔141的非晶質142所構成的屏護通孔140,所以可以容易地將被加工物100分割成元件晶片110。Furthermore, in the above-described embodiment, the starting point of division is set as the shielding through hole formed of the
又,在上述實施形態中,因為是在實施割斷步驟S5之後具備加熱樹脂層130以使其軟化而從該被加工物100去除之樹脂去除步驟S6,所以可以容易地進行樹脂層130的去除。Furthermore, in the above-described embodiment, since the resin removal step S6 is provided for heating the
以上,說明了本發明的一實施形態,但上述實施形態是作為例子而提示的實施形態,並非意欲限定發明的範圍。例如,在上述實施形態中,作為液狀樹脂,所使用的是藉由紫外線照射(外在刺激)而在短時間內硬化,且進一步以浸泡在溫水中的方式來軟化,而可以簡單地從被覆對象物去除的材料,但並非受限於此的材料,亦可使用以冷卻作為外在刺激的方式來固接,且藉由加熱來軟化之熱可塑性接著劑(蠟)。又,除了上述以外,亦可使用黏著力比樹脂層130與被加工物100的接著力更強的黏著膠帶,以在將貼附於樹脂層130的黏著膠帶剝離之時,將該樹脂層130從被加工物100剝離。As mentioned above, although one Embodiment of this invention was described, the said embodiment is an embodiment shown as an example, Comprising: It does not intend to limit the scope of the invention. For example, in the above-mentioned embodiment, as the liquid resin, it is hardened in a short time by ultraviolet irradiation (external stimulus), and further softened by soaking in warm water. The material to be removed from the coating object is not limited to this, and a thermoplastic adhesive (wax) that is fixed by cooling as an external stimulus and softened by heating can also be used. In addition to the above, an adhesive tape with a stronger adhesive force than the adhesive force between the
10‧‧‧切割單元11‧‧‧軸心12‧‧‧旋轉主軸13‧‧‧切割刀片14‧‧‧切割刀刃20‧‧‧樹脂供給噴嘴21‧‧‧紫外線照射燈22‧‧‧紫外線(外在刺激)30‧‧‧雷射加工裝置31‧‧‧工作夾台32‧‧‧雷射照射單元32A‧‧‧聚光器32B‧‧‧雷射光線40‧‧‧分斷裝置41‧‧‧支撐台41A‧‧‧開口部42‧‧‧按壓刀刃50‧‧‧溫水100‧‧‧被加工物100A‧‧‧正面(第1面)100B‧‧‧背面(第2面)101‧‧‧保護膠帶108‧‧‧保護片材110‧‧‧元件晶片(晶片)110A‧‧‧底面110B‧‧‧側面110C‧‧‧頂點110D、121C‧‧‧傾斜面111‧‧‧突部115‧‧‧環狀框架115A‧‧‧開口116‧‧‧黏著膠帶117‧‧‧框架單元120‧‧‧凹凸部(凹凸)121‧‧‧溝部121A‧‧‧頂部121B‧‧‧底部130‧‧‧樹脂層130A‧‧‧樹脂層的表面(上表面)131‧‧‧液狀樹脂(樹脂)140‧‧‧屏護通孔(分割起點)141‧‧‧細孔142‧‧‧非晶質150‧‧‧改質層(分割起點)d1、d2‧‧‧直徑S1~S6‧‧‧步驟P‧‧‧間隔Q‧‧‧聚光點θ‧‧‧刀刃角度X、Y、Z‧‧‧方向10‧‧‧Cutting Unit 11‧‧‧Shaft 12‧‧‧Rotating Spindle 13‧‧‧Cutting Blade 14‧‧‧Cutting Blade 20‧‧‧Resin Supply Nozzle 21‧‧‧Ultraviolet Irradiation Lamp 22‧‧‧Ultraviolet ( External stimuli) 30‧‧‧Laser processing device 31‧‧‧Working table 32‧‧‧Laser irradiation unit 32A‧‧‧Concentrator 32B‧‧‧Laser light 40‧‧‧breaking device41‧ ‧‧Support stand 41A‧‧‧Opening part 42‧‧‧Pressing blade 50‧‧‧Hot water 100‧‧‧Workpiece 100A‧‧‧Front (1st side) 100B‧‧‧Back side (2nd side) 101 ‧‧‧Protective tape 108‧‧‧Protective sheet 110‧‧‧Component chip (chip) 110A‧‧‧Bottom surface 110B‧‧‧Side surface 110C‧‧‧Top 110D, 121C‧‧‧Inclined surface 111‧‧‧Protrusion 115‧‧‧Ring frame 115A‧‧‧Opening 116‧‧‧Adhesive tape 117‧‧‧Frame unit 120‧‧‧Concave-convex part (concave-convex) 121‧‧‧Groove part 121A‧‧‧Top 121B‧‧‧Bottom 130‧ ‧‧Resin layer 130A‧‧‧Surface (upper surface) of resin layer 131‧‧‧Liquid resin (resin) 140‧‧‧Screen protection through hole (dividing starting point) 141‧‧‧Fine hole 142‧‧‧Amorphous Quality 150‧‧‧modified layer (splitting starting point) d1, d2‧‧‧diameter S1~S6‧‧‧step P‧‧‧interval Q‧‧‧focusing point θ‧‧‧blade angle X, Y, Z‧ ‧‧direction
圖1是顯示以本實施形態之被加工物的分割方法所分割的被加工物之構成例的立體圖。 圖2是顯示分割圖1的被加工物所形成的元件晶片之構成例的立體圖。 圖3是顯示被加工物的分割方法之順序的流程圖。 圖4是在被加工物的正面形成凹凸部之構成例的局部截面圖。 圖5是將被加工物的正面之已形成的凹凸部以液狀樹脂被覆之構成例的局部截面圖。 圖6是使所被覆的液狀樹脂硬化而形成樹脂層之構成例的局部截面圖。 圖7是顯示框架單元之構成例的立體圖。 圖8是顯示在被加工物的內部形成屏護通孔的雷射加工裝置之構成例的立體圖。 圖9是示意地顯示形成屏護通孔之被加工物的內部構造的局部截面圖。 圖10是示意地顯示屏護通孔之構造的截面圖。 圖11是示意地顯示屏護通孔之構造的立體圖。 圖12是示意地顯示對形成有屏護通孔的被加工物進行割斷之狀態的局部截面圖。 圖13是從被加工物去除樹脂層之構成例的局部截面圖。 圖14是已去除樹脂層的元件晶片之構成例的局部截面圖。 圖15是示意地顯示形成改質層之被加工物的內部構造的局部截面圖。 圖16是示意地顯示對已形成改質層的被加工物進行割斷之狀態的局部截面圖。FIG. 1 is a perspective view showing a configuration example of a workpiece divided by the method for dividing a workpiece according to the present embodiment. FIG. 2 is a perspective view showing a configuration example of an element wafer formed by dividing the workpiece of FIG. 1 . FIG. 3 is a flowchart showing the procedure of the method of dividing the workpiece. 4 is a partial cross-sectional view of an example of a configuration in which uneven portions are formed on the front surface of a workpiece. 5 is a partial cross-sectional view of an example of a configuration in which a concavo-convex portion formed on the front surface of a workpiece is covered with a liquid resin. 6 is a partial cross-sectional view of an example of a configuration in which the coated liquid resin is cured to form a resin layer. FIG. 7 is a perspective view showing a configuration example of a frame unit. 8 is a perspective view showing a configuration example of a laser processing apparatus for forming a shield through hole in a workpiece. 9 is a partial cross-sectional view schematically showing the internal structure of a workpiece in which a shield through hole is formed. FIG. 10 is a cross-sectional view schematically showing the structure of a display screen guard through hole. FIG. 11 is a perspective view schematically showing the structure of a display screen guard hole. 12 is a partial cross-sectional view schematically showing a state in which a workpiece having a shield through hole formed therein is cut. FIG. 13 is a partial cross-sectional view of a configuration example in which a resin layer is removed from a workpiece. FIG. 14 is a partial cross-sectional view of a configuration example of an element wafer from which the resin layer has been removed. FIG. 15 is a partial cross-sectional view schematically showing the internal structure of a workpiece on which a modified layer is formed. 16 is a partial cross-sectional view schematically showing a state in which the workpiece on which the modified layer has been formed is cut.
S1~S6‧‧‧步驟 Steps S1~S6‧‧‧
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