JP6935990B2 - Manufacturing method of wavelength conversion member, light emitting device and wavelength conversion member - Google Patents

Description

The present invention relates to a method for manufacturing a wavelength conversion member, a light emitting device, and a wavelength conversion member, and more particularly, a method for manufacturing a wavelength conversion member, a light emitting device, and a wavelength conversion member that wavelength-converts primary light from a laser light source and emits secondary light. Regarding.

A light emitting device is used in which an LED (Light Emitting Diode) or a semiconductor laser is used as a light source and a wavelength conversion member containing a phosphor material is used to convert the wavelength to obtain white light. In these light emitting devices, primary light such as blue light or ultraviolet light is emitted from a light source to irradiate the wavelength conversion member, and the phosphor contained in the wavelength conversion member is excited by the primary light to cause secondary light such as yellow light. Light is emitted, the primary light and the secondary light are mixed, and white light is irradiated to the outside.

Patent Document 1 proposes a vehicle lamp using a semiconductor laser as a light source. When a semiconductor laser is used as a light source, primary light having a large output and a narrow wavelength width can be obtained, but it has a feature that the directivity is very strong and the region where the light is irradiated is small. Therefore, as compared with the case where an LED is used as a light source, a high-power primary light is irradiated to an extremely small region of the wavelength conversion member to emit white light, and a light emitting device having high directivity can be obtained.

On the other hand, in the wavelength conversion member of the light emitting device, heat is generated at the same time as the wavelength conversion of the primary light. In particular, when a semiconductor laser is used as the light source, the temperature of the wavelength conversion member tends to rise because the primary light is concentrated in a small region and irradiated. Since the phosphor contained in the wavelength conversion member has a temperature characteristic in the efficiency of wavelength conversion, there arises a problem that the desired chromaticity is deviated if the temperature change is too large.

Japanese Unexamined Patent Publication No. 2012-221633

FIG. 8A is a schematic view showing an example of a method of fixing a wavelength conversion member in a light emitting device using a conventional semiconductor laser as a light source. In a light emitting device using a semiconductor laser as a light source, a solid wavelength conversion member 2 containing a phosphor material is arranged on the surface of a light extraction unit 1 composed of sapphire or the like that transmits primary light, and an adhesive 3 is provided. The wavelength conversion member 2 is fixed to the light extraction unit 1 with. The semiconductor laser as a light source is arranged at a position away from the wavelength conversion member 2, and is not shown.

FIG. 8B is a schematic view showing another example of a method of fixing a wavelength conversion member in a conventional light emitting device using a semiconductor laser as a light source. In this example, an opening is formed in the light extraction unit 1 of the light emitting device, the wavelength conversion member 2 is inserted into the opening, and between the side surface of the wavelength conversion member 2 and the inner surface of the opening of the light extraction unit 1. The wavelength conversion member 2 is fixed to the light extraction unit 1 by injecting the adhesive 3. In this example, the light extraction unit 1 does not have to be a material that transmits primary light, and a ceramic material or the like can be used.

In the light emitting device shown in FIGS. 8A and 8B, since the wavelength conversion member 2 is fixed with the adhesive 3, the heat generated by the wavelength conversion member 2 is taken out through the adhesive 3. It is transmitted to part 1 and dissipated. Generally, the light extraction unit 1 is made of sapphire or ceramic, and the adhesive 3 is made of glass, silicone resin, or the like. Since it is a material having relatively low thermal conductivity, it is generated by the wavelength conversion member 2. There is room for improvement in heat dissipation.

Therefore, it is an object of the present invention to provide a wavelength conversion member, a light emitting device, and a method for manufacturing a wavelength conversion member having excellent heat dissipation.

In order to solve the above problems, the wavelength conversion member of the present invention includes a phosphor portion that converts primary light into wavelength and emits secondary light, and a heat dissipation holding portion made of a semiconductor material that transmits the primary light. It is composed of any one of sapphire, SiC, and Si, has a holding substrate for holding the heat dissipation holding portion, and the heat dissipation holding portion is a crystal growth layer having a higher thermal conductivity than the holding substrate. The heat dissipation holding portion is characterized in that it comes into contact with at least a part of the phosphor portion to hold the phosphor portion.

In such a wavelength conversion member of the present invention, since the heat radiating holding portion made of a semiconductor material is brought into contact with the phosphor portion to hold the heat radiating holding portion, the heat generated in the phosphor portion can be used to provide a heat radiating holding portion having good thermal conductivity. Heat is efficiently dissipated through.

Further, in one aspect of the present invention, the phosphor portion is a sintered body containing a phosphor material.

Further, in one aspect of the present invention, the heat dissipation holding portion covers the entire side surface of the phosphor portion.

Further, in one aspect of the present invention, the heat dissipation holding portion covers the incident surface of the primary light in the phosphor portion.

In order to solve the above problems, the light emitting device of the present invention comprises a light source that irradiates primary light, a phosphor portion that converts the wavelength of the primary light to emit secondary light, and a semiconductor material that transmits the primary light. It is provided with a configured heat dissipation holding portion, is composed of any one of sapphire, SiC, and Si, and has a holding substrate that holds the heat dissipation holding portion, and the heat dissipation holding portion has a higher thermal conductivity than the holding substrate. It is a large crystal growth layer, and the heat radiation holding portion is characterized in that it comes into contact with at least a part of the phosphor portion to hold the phosphor portion.

In order to solve the above problems, the method for manufacturing a wavelength conversion member of the present invention includes a mounting step of mounting a phosphor portion on a holding substrate and primary light from a light source on the holding substrate and the phosphor portion. It is characterized by including a growth step of growing a semiconductor material that transmits light to form a heat dissipation holding portion.

Further, in one aspect of the present invention, after the growth step, a polishing step of polishing the back surface of the holding substrate and / or the surface of the heat dissipation holding portion is provided.

Further, in one aspect of the present invention, a groove forming step for forming a groove in the holding substrate is provided before the pre-described placement step, and the phosphor portion is placed in the groove in the pre-described placement step.

INDUSTRIAL APPLICABILITY The present invention can provide a wavelength conversion member, a light emitting device, and a method for manufacturing a wavelength conversion member having excellent heat dissipation.

It is a schematic cross-sectional view which shows the light emitting device 10 in 1st Embodiment. It is a schematic cross-sectional view which shows the structure of the wavelength conversion member 14 in 1st Embodiment. It is a process drawing which shows the manufacturing method of the wavelength conversion member 14 of 1st Embodiment. It is a conceptual diagram which shows the way of heat transfer in a wavelength conversion member 14. It is a schematic cross-sectional view which shows the lamp unit 20 in 2nd Embodiment. It is a process drawing which shows the manufacturing method of the wavelength conversion member 14 of 3rd Embodiment. It is a schematic cross-sectional view which shows the structure of the wavelength conversion member 14 in 3rd Embodiment. It is a schematic diagram which shows an example of the fixing method of the wavelength conversion member in the conventional light emitting device which used a semiconductor laser as a light source.

(First Embodiment)
Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings. The same or equivalent components, members, and processes shown in the drawings shall be designated by the same reference numerals, and redundant description will be omitted as appropriate. FIG. 1 is a schematic cross-sectional view showing a light emitting device 10 according to the present embodiment. The light emitting device 10 includes a stem 11, a semiconductor laser 12, a case portion 13, and a wavelength conversion member 14. In the light emitting device 10, the primary light L1 is irradiated to the wavelength conversion member 14 from the semiconductor laser 12, and the white light L2 is emitted to the outside by mixing with the secondary light wavelength-converted by the wavelength conversion member 14. Although FIG. 1 shows a so-called CAN type package as the light emitting device 10, the light emitting device 10 is not limited to the CAN type package, and packages for various semiconductor lasers can be used.

The stem 11 is a member on which the semiconductor laser 12 is mounted and the case portion 13 is fixed. The stem 11 is provided with a lead pin, a heat sink, and the like (not shown), and power is supplied to the semiconductor laser 12 from the outside and is generated by the semiconductor laser 12. Transfer the heat to the outside. The material constituting the stem 11 is not particularly limited, but a metal such as copper having good heat dissipation is desirable.

The semiconductor laser 12 is a semiconductor element to which electric power is supplied and oscillates a laser beam. The material constituting the semiconductor laser 12 is not particularly limited, but a nitride-based semiconductor is used when irradiating blue light or ultraviolet light as the primary light L1, and the resonator structure, electrode structure, and current of the semiconductor laser 12 are used. The element structure such as the constriction structure is not particularly limited, and an appropriate structure can be adopted in order to obtain the required emission intensity and oscillation wavelength.

The case portion 13 is a member arranged on the stem 11 so as to cover the semiconductor laser 12, and includes a cylindrical side wall and a top surface that are erected on the stem 11. An opening is provided in the center of the top surface of the case portion 13 to fix the wavelength conversion member 14. The material constituting the case portion 13 is not limited, but a metal material having excellent thermal conductivity is preferable in order to satisfactorily transfer the heat generated by the wavelength conversion member 14 to the stem 11.

The wavelength conversion member 14 is fixed to the opening of the case portion 13 and functions as a light extraction portion from the light emitting device 10. The wavelength conversion member 14 is a member containing a phosphor material that is excited by the primary light L1 emitted from the semiconductor laser 12 to emit secondary light, and the primary light L1 and the secondary light are mixed to produce white light L2. To the outside. Here, an example of irradiating white light L2 with a mixture of primary light L1 and secondary light has been shown, but a plurality of phosphor materials are provided to emit secondary light of multiple colors, and the color of the secondary light is mixed to cause white light. You may irradiate light L2. Further, although an example of white light is shown as the light L2 to be irradiated, other monochromatic light may be used, or a color other than white, which is a mixture of a plurality of colors, may be used.

Next, the structure and manufacturing method of the wavelength conversion member 14 will be described with reference to FIGS. 2 to 4. FIG. 2 is a schematic cross-sectional view showing the structure of the wavelength conversion member 14 in the present embodiment. As shown in FIG. 2, the wavelength conversion member 14 of the present embodiment includes a phosphor portion 14a, a holding substrate 15, and a heat radiating holding portion 16.

As shown in FIG. 2, in the wavelength conversion member 14, the heat dissipation holding portion 16 covers the entire lower part of the phosphor portion 14a and the holding substrate 15 in the drawing, and the phosphor portion 14a and the holding substrate 15 are exposed in the upper part of the drawing. .. The height of the phosphor portion 14a is higher than that of the holding substrate 15, and the phosphor portion 14a is held in a state of being buried in the holding substrate 15 and the heat dissipation holding portion 16 in the opening of the holding substrate 15. Further, the side surface and the lower surface of the phosphor portion 14a are covered with the heat dissipation holding portion 16, and the upper surface is exposed from the opening of the holding substrate 15. The diameter of the opening of the holding substrate 15 is formed to be larger than that of the phosphor portion 14a, and it is preferable that the heat radiation holding portion 16 is inserted between the side surface of the phosphor portion 14a and the inner surface of the opening. The body portion 14a and the opening may be in contact with each other.

The phosphor portion 14a is a member containing a phosphor material that is excited by the primary light L1 to emit secondary light. The size of the phosphor portion 14a is larger than the region irradiated with the primary light L1 from the semiconductor laser 12, and it is sufficient that the wavelength of the primary light L1 can be appropriately converted into the secondary light. For example, the thickness is about several hundred μm and the diameter is large. It is about 0.1 to several mm. The phosphor material contained in the phosphor portion 14a is not particularly limited, but a ceramic phosphor is preferable in order to form the heat dissipation holding portion 16 as described later. As a specific material of the phosphor portion 14a, a _{ceramic phosphor obtained by sintering a ceramic substrate prepared by using Y 3} Al ₅ O ₁₂ , that is, YAG (Yttrium Aluminum Garnet) powder is most preferable. By using the YAG sintered body as the phosphor portion 14a, the blue light of the primary light L1 is wavelength-converted to emit the yellow light of the secondary light, and white can be obtained by mixing the primary light and the secondary light.

The holding substrate 15 is a thin plate-shaped member that holds the heat dissipation holding portion 16 on one surface, and the phosphor portion 14a is arranged in the opening. The material constituting the holding substrate 15 is a material capable of forming the heat dissipation holding portion 16 on one surface, and for example, sapphire, SiC, Si and the like are preferable.

The heat dissipation holding portion 16 is a member formed so as to cover one surface of the holding substrate 15 and the entire phosphor portion 14a. As described above, it is preferable that the heat radiation holding portion 16 is also formed in the gap between the inside of the opening of the holding substrate 15 and the side surface of the phosphor portion 14a, but the phosphor portion 14a and the holding substrate 15 are in contact with each other. You may be. The heat dissipation holding portion 16 is made of a semiconductor material that can grow on the holding substrate 15 and the phosphor portion 14a and transmits the primary light L1 from the semiconductor laser 12. Specific examples of the semiconductor material include group III nitride semiconductors such as GaN and AlN.

The thermal conductivity of the semiconductor material used for the heat dissipation holding unit 16 is about 130 [W / mK] for GaN and about 150 [W / mK] for AlN, which is the same as that of the conventionally used adhesive glass or silicone resin. It has better thermal conductivity than 1 [W / mK] and about 40 [W / mK] of the sapphire substrate.

Next, a method of manufacturing the wavelength conversion member 14 will be shown with reference to FIG. First, as shown in FIG. 3A, a holding substrate 15 having a recess 15a formed on its surface is prepared through a groove forming step. The thickness of the holding substrate 15 prepared here in the initial state is thicker than that of the holding substrate 15 shown in FIG. 2, has a thickness of several hundred μm or more, and has the rigidity required for a self-standing substrate. Here, the self-supporting substrate has a normal meaning in semiconductor manufacturing technology, and means that it has a strength that is not broken during operation. The recess 15a is formed so that the diameter is larger than the diameter of the phosphor portion 14a and shallower than the thickness of the phosphor portion 14a.

Next, as shown in FIG. 3B, the phosphor portion 14a prepared in advance is arranged in the recess 15a. At this time, it is preferable that the side surface of the phosphor portion 14a does not come into contact with the inner circumference of the recess 15a and is arranged with a predetermined gap. By arranging the phosphor portion 14a in the recess 15a, it is possible to prevent the phosphor portion 14a from being blown off by the growth gas in the growth step, which is a subsequent step, and to keep the phosphor portion 14a in a predetermined position to dissipate heat. The holding portion 16 can be grown.

Next, as shown in FIG. 3C, the phosphor portion 14a is placed on the holding substrate 15 and put into the reaction vessel, and the semiconductor layer is grown on the holding substrate 15 and the phosphor portion 14a to dissipate heat. The holding portion 16 is formed. For the growth of the semiconductor layer, metalorganic vapor deposition (MOCVD: Metalorganic Chemical Vapor Deposition), hydride vapor phase epitaxy (HVPE), molecular beam epitaxy (MBE), and molecular beam epitaxy (MBE) Although various methods such as the method can be used, the HVPE method is preferable from the viewpoint of crystal growth rate. It is described in, for example, Japanese Patent No. 5768159 that a group III nitride semiconductor layer such as AlN can grow on the phosphor portion 14a which is a ceramic phosphor.

As shown in FIG. 3C, the growth of the heat radiating holding portion 16 is continued until the heat radiating holding portion 16 is thicker than the phosphor portion 14a, and covers the side surface and the upper surface of the phosphor portion 14a to cover the phosphor portion 14a. The position corresponding to is convex. At this time, the growth gas is also supplied to the gap between the side surface of the phosphor portion 14a and the inner peripheral surface of the recess 15a, so that the heat dissipation holding portion 16 is also formed in the gap.

Finally, as shown in FIG. 3D, the back surface side of the holding substrate 15 and the front surface side of the heat dissipation holding portion 16 are polished. As a polishing method, a preferable method such as wrapping or chemical mechanical polishing (CMP) can be adopted depending on the materials of the holding substrate 15 and the heat radiating holding portion 16. By this polishing step, the thickness of the holding substrate 15 is thinned to about the depth of the recess 15a, and at the same time, the back surface of the phosphor portion 14a is exposed. Further, the heat dissipation holding portion 16 is polished to the extent that the surface becomes flat, but the upper surface of the phosphor portion 14a is not exposed and the heat dissipation holding portion 16 remains and is covered.

The wavelength conversion member 14 obtained by the above-mentioned manufacturing method is individually divided by dicing, attached to the opening of the case portion 13, and the case portion 13 is attached on the stem 11 so as to cover the semiconductor laser 12. The light emitting device 10 of the form is configured.

FIG. 4 is a conceptual diagram showing how heat is transferred in the wavelength conversion member 14. The vertical direction of the wavelength conversion member 14 completed in FIG. 3D is drawn upside down, and the primary light L1 is irradiated from below. The black arrow in FIG. 4 schematically shows the heat path from the phosphor portion 14a. As described above, the heat dissipation holding portion 16 made of a semiconductor material such as GaN or AlN has better thermal conductivity than glass, silicone resin, or a sapphire substrate, and is in contact with the side surface and the lower surface of the phosphor portion 14a. Heat is satisfactorily transferred through the heat radiating holding portion 16 and radiated.

In the wavelength conversion member 14 of the present embodiment, the heat dissipation holding portion 16 is also formed on the incident side of the primary light L1 so as to cover the phosphor portion 14a. Since the heat radiating holding portion 16 is made of a material that transmits the primary light L1, even if the heat radiating holding portion 16 covers the incident surface of the phosphor portion 14a, the primary light L1 is not absorbed by the heat radiating holding portion 16 and is sufficient. The phosphor portion 14a is irradiated with the primary light L1. Since the heat radiating holding portion 16 is also in contact with the incident surface of the phosphor portion 14a, heat is satisfactorily dissipated from the heat radiating holding portion 16 even from the region of the incident surface where the wavelength conversion and heat generation are most performed by the irradiation of the primary light L1. It becomes possible to do.

Further, since the heat dissipation holding portion 16 is also formed between the inner circumference of the opening corresponding to the recess 15a of the holding substrate 15 and the side surface of the phosphor portion 14a, the heat radiation holding portion 16 covers the entire side surface of the phosphor portion 14a. , A heat dissipation path from the phosphor portion 14a is secured.

Further, the surface of the heat dissipation holding portion 16 is flattened by the polishing step shown in FIG. 3D. As a result, when the primary light L1 passes through the heat dissipation holding portion 16 and is incident on the phosphor portion 14a, the amount of incident light on the phosphor portion 14a is reduced due to refraction or scattering due to the unevenness of the surface of the heat dissipation holding portion 16. It can be suppressed. Further, since the back surface of the holding substrate 15 is polished in the polishing step to expose the phosphor portion 14a, white light is reflected at the interface between the phosphor portion 14a and the holding substrate 15 and is transmitted through the holding substrate 15. It is possible to suppress the attenuation at the time, and the efficiency of extracting white light is improved.

As described above, in the present embodiment, the wavelength conversion member 14 is a heat radiation holding unit 16 composed of a phosphor unit 14a that converts the wavelength of the primary light L1 to emit secondary light and a semiconductor material that transmits the primary light. The heat radiation holding portion 16 is in contact with and holds at least a part of the phosphor portion 14a. This makes it possible to provide a wavelength conversion member, a light emitting device, and a method for manufacturing the wavelength conversion member having excellent heat dissipation.

(Second Embodiment)
Next, the second embodiment of the present invention will be described with reference to FIG. The description of the portion overlapping with the first embodiment will be omitted. FIG. 5 is a schematic cross-sectional view showing the lamp unit 20 according to the second embodiment. In this embodiment, a lamp unit for a vehicle is configured by using the light emitting device 10 shown in the first embodiment as a light source.

The lamp unit 20 shown in FIG. 5 is configured to form a high beam light distribution pattern. The lamp unit 20 is via a light emitting device 10, a cover 21, a lamp body 22, a projection lens 23, a reflector 24 having an elliptical reflection surface that reflects emitted light toward the projection lens 23, and a base portion 26. A heat radiating fin 25 that radiates heat generated by the light emitting device 10 to the outside, a base portion 26 on which the light emitting device 10 is mounted, a swivel actuator 27, a screw 29, a leveling actuator 30, and a screw 31 are provided. ..

The base portion 26 is supported by a swivel actuator 27 so that it can swivel in the horizontal direction. Further, the upper portion of the base portion 26 is connected to the lamp body 22 via a screw 31 or the like. The swivel actuator 27 is connected to the leveling actuator 30. By rotating the screw 29, the leveling actuator 30 can move the connecting member 28 and change the inclination of the base portion 26 in the vertical direction. As described above, the leveling actuator 30 is for changing the optical axis of the lamp unit 20 and the light distribution pattern formed by the lamp unit 20 in the vertical direction.

As shown in FIG. 1, the primary light L1 emitted by the semiconductor laser 12 is wavelength-converted into secondary light by the wavelength conversion member 14, and white light L2 due to a mixture of the primary light L1 and the secondary light is emitted from the light emitting device 10. Will be done. As shown in FIG. 5, the white light emitted upward from the light emitting device 10 is reflected forward by the reflector 24, passes through the projection lens 23 and the cover 21, and is projected to the front of the vehicle.

In the lamp unit 20 of the present embodiment, as shown in FIG. 4, the heat generated in the phosphor portion 14a passes through the heat dissipation holding portion 16 and the case portion 13 and the stem 11, and is transferred from the base portion 26 to the heat radiation fin 25. It is transmitted and dissipated. Therefore, even in the lamp unit 20 of the present embodiment, the heat generated in the phosphor unit 14a can be satisfactorily dissipated to realize stable white light irradiation.

(Third Embodiment)
Next, the third embodiment of the present invention will be described with reference to FIGS. 6 and 7. The description of the portion overlapping with the first embodiment will be omitted. FIG. 6 is a process diagram showing a method of manufacturing the wavelength conversion member 14 of the present embodiment. FIG. 7 is a schematic cross-sectional view showing the structure of the wavelength conversion member 14 in the present embodiment.

First, as shown in FIG. 6A, a holding substrate 15 having a recess 15a formed on its surface is prepared through a groove forming step. In the present embodiment, the side wall of the recess 15a has a tapered shape that is inclined at a predetermined angle with respect to the front surface and the bottom surface. The bottom surface of the recess 15a has the same area as the phosphor portion 14a.

Next, as shown in FIG. 6B, the phosphor portion 14a prepared in advance is arranged in the recess 15a. The side wall of the recess 15a has a tapered shape, and by placing the phosphor portion 14a on the recess 15a, the phosphor portion 14a is positioned on the bottom surface of the recess by the tapered shape, so that the work efficiency is improved. Further, a gap is secured between the side surface of the tapered recess 15a and the side surface of the phosphor portion 14a.

Next, as shown in FIG. 6C, the phosphor portion 14a is placed on the holding substrate 15 and put into the reaction vessel, and the semiconductor layer is grown on the holding substrate 15 and the phosphor portion 14a to dissipate heat. The holding portion 16 is formed. Since a gap is secured between the side surface of the recess 15a and the side surface of the phosphor portion 14a due to the tapered shape of the recess 15a as described above, the semiconductor layer to be grown can be brought into contact with the side surface of the phosphor portion 14a. It will be easy.

Finally, as shown in FIG. 6D, the back surface side of the holding substrate 15 and the front surface side of the heat dissipation holding portion 16 are polished. As a result, the wavelength conversion member 14 shown in FIG. 7 is obtained.

Also in the present embodiment, the wavelength conversion member 14 includes a phosphor unit 14a that converts the wavelength of the primary light L1 to emit secondary light, and a heat dissipation holding unit 16 made of a semiconductor material that transmits the primary light, and dissipates heat. The holding portion 16 is in contact with and holds at least a part of the phosphor portion 14a. This makes it possible to provide a wavelength conversion member, a light emitting device, and a method for manufacturing the wavelength conversion member having excellent heat dissipation.

(Fourth Embodiment)
Next, a fourth embodiment of the present invention will be described. In the wavelength conversion member of the present embodiment, the polishing step of the first embodiment is omitted, and the heat radiation holding portion 16 shown in FIG. 3C is diced at the end of growth and attached to the opening of the case portion 13.

Here, an example is shown in which both the back surface of the holding substrate 15 and the front surface of the heat radiating holding portion 16 are not polished, but only one of the back surface of the holding substrate 15 and the front surface of the heat radiating holding portion 16 may be polished.

Also in the present embodiment, the wavelength conversion member 14 includes a phosphor unit 14a that converts the wavelength of the primary light L1 to emit secondary light, and a heat dissipation holding unit 16 made of a semiconductor material that transmits the primary light, and dissipates heat. The holding portion 16 is in contact with and holds at least a part of the phosphor portion 14a. This makes it possible to provide a wavelength conversion member, a light emitting device, and a method for manufacturing the wavelength conversion member having excellent heat dissipation.

The present invention is not limited to the above-described embodiments, and various modifications can be made within the scope of the claims, and the embodiments obtained by appropriately combining the technical means disclosed in the different embodiments. Is also included in the technical scope of the present invention.

L1 ... Primary light L2 ... White light 1 ... Light extraction unit 3 ... Adhesive 2 ... Wavelength conversion member 10 ... Light emitting device 11 ... Stem 12 ... Semiconductor laser 13 ... Case unit 14 ... Wavelength conversion member 14a ... Fluorescent material unit 15 ... Holding Substrate 15a ... Recess 16 ... Heat dissipation holding part 20 ... Lighting equipment unit 21 ... Cover 22 ... Lamp body 23 ... Projection lens 24 ... Reflector 25 ... Heat dissipation fin 26 ... Base part 27 ... Swible actuator 28 ... Connecting member 29 ... Screw 30 ... Leveling actuator 31 ... Screw

Claims (7)

A phosphor part that converts the wavelength of the primary light and emits the secondary light,
It is provided with a heat dissipation holding portion made of a semiconductor material that transmits the primary light.
It is composed of any one of sapphire, SiC, and Si, and has a holding substrate that holds the heat dissipation holding portion.
The heat dissipation holding portion is a crystal growth layer having a higher thermal conductivity than the holding substrate.
The heat radiation holding portion is a wavelength conversion member characterized in that the heat radiation holding portion is in contact with at least a part of the phosphor portion to hold the phosphor portion. The wavelength conversion member according to claim 1.
The wavelength conversion member is characterized in that the phosphor portion is a sintered body containing a phosphor material. The wavelength conversion member according to claim 1 or 2.
The heat dissipation holding portion is a wavelength conversion member characterized by covering the entire side surface of the phosphor portion. The wavelength conversion member according to any one of claims 1 to 3.
The heat dissipation holding portion is a wavelength conversion member characterized by covering an incident surface of the primary light in the phosphor portion. A light source that irradiates primary light and
A phosphor unit that converts the wavelength of the primary light to emit secondary light,
It is provided with a heat dissipation holding portion made of a semiconductor material that transmits the primary light.
It is composed of any one of sapphire, SiC, and Si, and has a holding substrate that holds the heat dissipation holding portion.
The heat dissipation holding portion is a crystal growth layer having a higher thermal conductivity than the holding substrate.
The heat radiation holding portion is a light emitting device characterized in that the heat radiation holding portion is in contact with at least a part of the phosphor portion to hold the phosphor portion. The mounting process of mounting the phosphor on the holding substrate, and
A growth step of growing a semiconductor material that transmits primary light from a light source to form a heat dissipation holding portion is provided on the holding substrate and the phosphor portion .
A method for manufacturing a wavelength conversion member, which comprises a polishing step of polishing the back surface of the holding substrate and / or the surface of the heat radiation holding portion after the growth step. The method for manufacturing a wavelength conversion member according to claim 6.
A groove forming step for forming a groove on the holding substrate is provided before the above-described setting step.
A method for manufacturing a wavelength conversion member, which comprises placing the phosphor portion in the groove in the above-described placement step.

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