JP6931153B2 - パルスシェーピング増幅器システム - Google Patents

パルスシェーピング増幅器システム Download PDF

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Publication number
JP6931153B2
JP6931153B2 JP2018542749A JP2018542749A JP6931153B2 JP 6931153 B2 JP6931153 B2 JP 6931153B2 JP 2018542749 A JP2018542749 A JP 2018542749A JP 2018542749 A JP2018542749 A JP 2018542749A JP 6931153 B2 JP6931153 B2 JP 6931153B2
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Japan
Prior art keywords
reference voltage
voltage pulse
amplitude
pulse
amplifier
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Japanese (ja)
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JP2019512185A (ja
JP2019512185A5 (https=
Inventor
ナヴァネーサクリシュナン エアスワラン スリ
ナヴァネーサクリシュナン エアスワラン スリ
Original Assignee
テキサス インスツルメンツ インコーポレイテッド
テキサス インスツルメンツ インコーポレイテッド
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    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04BTRANSMISSION
    • H04B1/00Details of transmission systems, not covered by a single one of groups H04B3/00 - H04B13/00; Details of transmission systems not characterised by the medium used for transmission
    • H04B1/38Transceivers, i.e. devices in which transmitter and receiver form a structural unit and in which at least one part is used for functions of transmitting and receiving
    • H04B1/40Circuits
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F1/00Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/02Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
    • H03F1/0205Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
    • H03F1/0211Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers with control of the supply voltage or current
    • H03F1/0216Continuous control
    • H03F1/0222Continuous control by using a signal derived from the input signal
    • H03F1/0227Continuous control by using a signal derived from the input signal using supply converters
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/193High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only with field-effect devices
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F3/00Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/30Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor
    • H03F3/3001Single-ended push-pull [SEPP] amplifiers; Phase-splitters therefor with field-effect transistors
    • H03F3/301CMOS common drain output SEPP amplifiers
    • HELECTRICITY
    • H04ELECTRIC COMMUNICATION TECHNIQUE
    • H04LTRANSMISSION OF DIGITAL INFORMATION, e.g. TELEGRAPHIC COMMUNICATION
    • H04L67/00Network arrangements or protocols for supporting network services or applications
    • H04L67/01Protocols
    • H04L67/12Protocols specially adapted for proprietary or special-purpose networking environments, e.g. medical networks, sensor networks, networks in vehicles or remote metering networks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/114Indexing scheme relating to amplifiers the amplifier comprising means for electro-magnetic interference [EMI] protection
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/18Indexing scheme relating to amplifiers the bias of the gate of a FET being controlled by a control signal
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/249A switch coupled in the input circuit of an amplifier being controlled by a circuit, e.g. feedback circuitry being controlling the switch
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03FAMPLIFIERS
    • H03F2200/00Indexing scheme relating to amplifiers
    • H03F2200/451Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Computer Networks & Wireless Communication (AREA)
  • Signal Processing (AREA)
  • Health & Medical Sciences (AREA)
  • Computing Systems (AREA)
  • General Health & Medical Sciences (AREA)
  • Medical Informatics (AREA)
  • Amplifiers (AREA)
  • Tone Control, Compression And Expansion, Limiting Amplitude (AREA)
JP2018542749A 2016-02-11 2017-02-13 パルスシェーピング増幅器システム Active JP6931153B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201662294036P 2016-02-11 2016-02-11
US62/294,036 2016-02-11
US15/211,039 2016-07-15
US15/211,039 US9893757B2 (en) 2016-02-11 2016-07-15 Pulse-shaping LDO provides first and second slew-rate increases in amplitude
PCT/US2017/017744 WO2017139808A1 (en) 2016-02-11 2017-02-13 Pulse-shaping amplifier system

Publications (3)

Publication Number Publication Date
JP2019512185A JP2019512185A (ja) 2019-05-09
JP2019512185A5 JP2019512185A5 (https=) 2020-03-19
JP6931153B2 true JP6931153B2 (ja) 2021-09-01

Family

ID=59561798

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2018542749A Active JP6931153B2 (ja) 2016-02-11 2017-02-13 パルスシェーピング増幅器システム

Country Status (5)

Country Link
US (1) US9893757B2 (https=)
EP (1) EP3414835B1 (https=)
JP (1) JP6931153B2 (https=)
CN (1) CN108604885B (https=)
WO (1) WO2017139808A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108449073B (zh) * 2018-06-05 2023-07-07 安徽北方微电子研究院集团有限公司 宽电源电压范围低串扰的多通道放大整形电路

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GB781057A (en) * 1952-02-22 1957-08-14 Elliott Brothers London Ltd Improvements in or relating to the comparison and measurement of signals in electrical pulse systems
US3898571A (en) 1974-05-13 1975-08-05 Us Air Force Pulse shape detector
US4896333A (en) 1987-08-04 1990-01-23 Signetics Corporation Circuit for generating a trapezoidal current waveform with matched rise and fall times
JPH06120744A (ja) * 1992-10-01 1994-04-28 Fujitsu Ten Ltd ディジタルアンプ歪み低減回路
RU2103744C1 (ru) 1994-10-06 1998-01-27 Третьяков Сергей Александрович Система тревожной сигнализации
US5677647A (en) 1995-10-20 1997-10-14 Tektronix, Inc. High power pulse waveform generator
US6943640B2 (en) * 2003-03-03 2005-09-13 Lockhead Martin Corporation Current source modulator
RU2277754C1 (ru) * 2004-11-24 2006-06-10 Южно-Российский государственный университет экономики и сервиса (ЮРГУЭС) Способ повышения быстродействия операционных усилителей с непосредственной связью каскадов
JP2006180049A (ja) * 2004-12-21 2006-07-06 Yamaha Corp ディジタルアンプ
RU2277546C1 (ru) 2005-03-11 2006-06-10 Общество с ограниченной ответственностью "Пента-91" (ООО "Пента-91") Способ получения полисилоксан-поликарбонатных блок-сополомеров
US7486143B2 (en) * 2006-09-22 2009-02-03 Avago Technologies Wireless Ip (Singapore) Pte. Ltd. Circuit for biasing a transistor and related system and method
RU2321157C1 (ru) 2006-12-13 2008-03-27 ГОУ ВПО "Южно-Российский государственный университет экономики и сервиса" (ЮРГУЭС) Входной каскад быстродействующего операционного усилителя с нелинейной токовой обратной связью
JP4935422B2 (ja) * 2007-02-28 2012-05-23 株式会社日立製作所 前置増幅器およびそれを用いた光受信装置
US7646244B1 (en) * 2008-07-24 2010-01-12 National Semiconductor Corporation Apparatus and method for unity gain buffer with high switching speed and low quiescent current
WO2010013096A1 (en) * 2008-07-31 2010-02-04 Freescale Semiconductor, Inc. Communications module apparatus, integrated circuit and method of communicating data
KR101429804B1 (ko) * 2009-02-25 2014-08-18 티에이치엑스 리미티드 저소모 증폭기
US8237422B2 (en) * 2009-05-09 2012-08-07 Cosmic Circuits Private Limited Efficient switch cascode architecture for switching devices
JPWO2010134516A1 (ja) * 2009-05-19 2012-11-12 ローム株式会社 電源装置及びこれを備えた電子機器
US8576592B2 (en) 2009-07-28 2013-11-05 Thx Ltd Power converter with low ripple output
RU2403666C1 (ru) 2009-11-02 2010-11-10 Александр Васильевич Гвоздырев Источник питания пожарного извещателя
US8379702B2 (en) * 2010-03-16 2013-02-19 Micrel, Inc. High bandwidth programmable transmission line pre-emphasis method and circuit
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CN101951034B (zh) * 2010-10-12 2012-09-26 西安天伟电子系统工程有限公司 基于脉冲功率放大器的供电装置
JP6013846B2 (ja) * 2011-10-06 2016-10-25 リコー電子デバイス株式会社 スイッチングレギュレータ及び電子機器
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JP2014241575A (ja) * 2013-05-14 2014-12-25 株式会社デンソー 通信システム
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US9660585B2 (en) * 2015-06-17 2017-05-23 Qualcomm Incorporated Class AB amplifier

Also Published As

Publication number Publication date
CN108604885A (zh) 2018-09-28
US20170237461A1 (en) 2017-08-17
US9893757B2 (en) 2018-02-13
JP2019512185A (ja) 2019-05-09
EP3414835A4 (en) 2018-12-19
WO2017139808A1 (en) 2017-08-17
EP3414835A1 (en) 2018-12-19
EP3414835B1 (en) 2022-11-09
CN108604885B (zh) 2022-07-05

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