JP6925976B2 - 熱cvd中にリガンドを並行して流すことにより高アスペクト比トレンチを充填するプロセス - Google Patents
熱cvd中にリガンドを並行して流すことにより高アスペクト比トレンチを充填するプロセス Download PDFInfo
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- JP6925976B2 JP6925976B2 JP2017551597A JP2017551597A JP6925976B2 JP 6925976 B2 JP6925976 B2 JP 6925976B2 JP 2017551597 A JP2017551597 A JP 2017551597A JP 2017551597 A JP2017551597 A JP 2017551597A JP 6925976 B2 JP6925976 B2 JP 6925976B2
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- containing precursor
- boron
- nitrogen
- precursor
- ligand
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- 238000000034 method Methods 0.000 title claims description 64
- 239000003446 ligand Substances 0.000 title claims description 57
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- 238000012545 processing Methods 0.000 claims description 81
- 239000000758 substrate Substances 0.000 claims description 39
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 37
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- 238000000151 deposition Methods 0.000 claims description 29
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 28
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- 125000000217 alkyl group Chemical group 0.000 claims description 14
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- -1 bis (cyclopentadienyl) cobalt (II) Chemical compound 0.000 claims description 10
- 125000004432 carbon atom Chemical group C* 0.000 claims description 9
- 229910052582 BN Inorganic materials 0.000 claims description 5
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 claims description 5
- 238000000197 pyrolysis Methods 0.000 claims description 5
- ZSWFCLXCOIISFI-UHFFFAOYSA-N cyclopentadiene Chemical compound C1C=CC=C1 ZSWFCLXCOIISFI-UHFFFAOYSA-N 0.000 claims description 4
- YPTUAQWMBNZZRN-UHFFFAOYSA-N dimethylaminoboron Chemical group [B]N(C)C YPTUAQWMBNZZRN-UHFFFAOYSA-N 0.000 claims description 4
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 claims description 4
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 3
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 3
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 3
- 229910017052 cobalt Inorganic materials 0.000 claims description 3
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- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims description 3
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims description 3
- BORTXUKGEOWSPS-UHFFFAOYSA-N n-dimethylboranylmethanamine Chemical compound CNB(C)C BORTXUKGEOWSPS-UHFFFAOYSA-N 0.000 claims description 3
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 claims description 3
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 3
- XDHJNPINFJSJJB-UHFFFAOYSA-N cobalt;1,2,3,4,5-pentamethylcyclopentane Chemical compound [Co].C[C]1[C](C)[C](C)[C](C)[C]1C.C[C]1[C](C)[C](C)[C](C)[C]1C XDHJNPINFJSJJB-UHFFFAOYSA-N 0.000 claims description 2
- 125000001449 isopropyl group Chemical group [H]C([H])([H])C([H])(*)C([H])([H])[H] 0.000 claims description 2
- PHFFANVCGVJLOM-UHFFFAOYSA-N n-diethylboranylethanamine Chemical compound CCNB(CC)CC PHFFANVCGVJLOM-UHFFFAOYSA-N 0.000 claims description 2
- 125000001971 neopentyl group Chemical group [H]C([*])([H])C(C([H])([H])[H])(C([H])([H])[H])C([H])([H])[H] 0.000 claims description 2
- 125000003277 amino group Chemical group 0.000 claims 2
- 238000010438 heat treatment Methods 0.000 claims 2
- YHCQFTZSIGZRTR-UHFFFAOYSA-N cobalt;ethylcyclopentane Chemical compound [Co].CC[C]1[CH][CH][CH][CH]1.CC[C]1[CH][CH][CH][CH]1 YHCQFTZSIGZRTR-UHFFFAOYSA-N 0.000 claims 1
- 125000000524 functional group Chemical group 0.000 claims 1
- 239000000463 material Substances 0.000 description 16
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 16
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- 239000010937 tungsten Substances 0.000 description 9
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- GETQZCLCWQTVFV-UHFFFAOYSA-N trimethylamine Chemical compound CN(C)C GETQZCLCWQTVFV-UHFFFAOYSA-N 0.000 description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 7
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- 229910052698 phosphorus Inorganic materials 0.000 description 7
- 239000011574 phosphorus Substances 0.000 description 7
- 239000002210 silicon-based material Substances 0.000 description 7
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- ROSDSFDQCJNGOL-UHFFFAOYSA-N Dimethylamine Chemical compound CNC ROSDSFDQCJNGOL-UHFFFAOYSA-N 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 5
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- BGECDVWSWDRFSP-UHFFFAOYSA-N borazine Chemical compound B1NBNBN1 BGECDVWSWDRFSP-UHFFFAOYSA-N 0.000 description 4
- 125000002915 carbonyl group Chemical group [*:2]C([*:1])=O 0.000 description 4
- 239000012705 liquid precursor Substances 0.000 description 4
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 3
- 125000000058 cyclopentadienyl group Chemical group C1(=CC=CC1)* 0.000 description 3
- 239000001257 hydrogen Substances 0.000 description 3
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- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 229910003481 amorphous carbon Inorganic materials 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910000085 borane Inorganic materials 0.000 description 2
- RJTANRZEWTUVMA-UHFFFAOYSA-N boron;n-methylmethanamine Chemical compound [B].CNC RJTANRZEWTUVMA-UHFFFAOYSA-N 0.000 description 2
- FQNHWXHRAUXLFU-UHFFFAOYSA-N carbon monoxide;tungsten Chemical group [W].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-].[O+]#[C-] FQNHWXHRAUXLFU-UHFFFAOYSA-N 0.000 description 2
- 239000012159 carrier gas Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
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- 238000005516 engineering process Methods 0.000 description 2
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- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 2
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- 239000010703 silicon Substances 0.000 description 2
- 238000002207 thermal evaporation Methods 0.000 description 2
- 238000000427 thin-film deposition Methods 0.000 description 2
- 125000003542 3-methylbutan-2-yl group Chemical group [H]C([H])([H])C([H])(*)C([H])(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910000599 Cr alloy Inorganic materials 0.000 description 1
- 229910018487 Ni—Cr Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- JBANFLSTOJPTFW-UHFFFAOYSA-N azane;boron Chemical compound [B].N JBANFLSTOJPTFW-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000005513 bias potential Methods 0.000 description 1
- 230000007175 bidirectional communication Effects 0.000 description 1
- WVMHLYQJPRXKLC-UHFFFAOYSA-N borane;n,n-dimethylmethanamine Chemical compound B.CN(C)C WVMHLYQJPRXKLC-UHFFFAOYSA-N 0.000 description 1
- 239000006227 byproduct Substances 0.000 description 1
- 150000001723 carbon free-radicals Chemical class 0.000 description 1
- 150000001728 carbonyl compounds Chemical class 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000000788 chromium alloy Substances 0.000 description 1
- BIJOYKCOMBZXAE-UHFFFAOYSA-N chromium iron nickel Chemical compound [Cr].[Fe].[Ni] BIJOYKCOMBZXAE-UHFFFAOYSA-N 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 208000037998 chronic venous disease Diseases 0.000 description 1
- XLJKHNWPARRRJB-UHFFFAOYSA-N cobalt(2+) Chemical compound [Co+2] XLJKHNWPARRRJB-UHFFFAOYSA-N 0.000 description 1
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- 238000006731 degradation reaction Methods 0.000 description 1
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- 230000014509 gene expression Effects 0.000 description 1
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- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 229910001293 incoloy Inorganic materials 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
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- 125000001972 isopentyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])C([H])([H])* 0.000 description 1
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- 125000004430 oxygen atom Chemical group O* 0.000 description 1
- 125000003538 pentan-3-yl group Chemical group [H]C([H])([H])C([H])([H])C([H])(*)C([H])([H])C([H])([H])[H] 0.000 description 1
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- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
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Description
、
、
、及びこれらの組み合わせからなる群から選択されてもよく、Rは、H及び炭素数1から5の低級アルキル基の群から独立して選択される。
)などが含まれる。
Claims (12)
- 基板を処理する方法であって、
アミノ基を含むホウ素含有前駆体を処理チャンバの内部処理容積の中に流すことであって、
、
、及びこれらの組み合わせから選択されるホウ素含有前駆体を流すことと、
前記アミノ基に適合する官能基を含む窒素含有前駆体を前記内部処理容積の中に流すことであって、HNR2、NR3、及びこれらの組み合わせからなる群から選択される窒素含有前駆体を流すことと、
プラズマがない状態で、前記内部処理容積の中で前記ホウ素含有前駆体及び前記窒素含有前駆体を熱分解し、前記基板上の誘電体層の表面において及びその下方で形成された高アスペクト比フィーチャデフィニションの少なくとも1つ以上の側壁及び底面の上に窒化ホウ素層を堆積することと
を含み、
前記ホウ素含有前駆体及び前記窒素含有前駆体において、Rは、炭素数1から5の低級アルキル基である、方法。 - 前記ホウ素含有前駆体が、ジメチルアミノボラン、トリメチルアミノボラン、トリエチルアミノボラン、及びこれらの組み合わせからなる群から選択される、請求項1に記載の方法。
- 前記ホウ素含有前駆体及び前記窒素含有前駆体を熱分解することが、前記ホウ素含有前駆体及び前記窒素含有前駆体を摂氏300度から摂氏550度の温度で加熱することを含む、請求項1に記載の方法。
- 前記高アスペクト比フィーチャデフィニションが、ビア、トレンチ、ライン、コンタクトホール、貫通孔、及びこれらの組み合わせから選択される、請求項1に記載の方法。
- 前記高アスペクト比フィーチャデフィニションが、少なくとも5:1以上の高さ対幅の比を有する、請求項4に記載の方法。
- Rは、メチル、エチル、プロピル、イソプロピル、ブチル、イソブチル、tert−ブチル、及びネオペンチルの群から選択される、請求項1に記載の方法。
- 基板を処理する方法であって、
ホウ素含有前駆体を処理チャンバの内部処理容積の中に流すことであって、
であるホウ素含有前駆体を流すことと、
窒素含有前駆体を前記内部処理容積の中に流すことであって、HNR2である窒素含有前駆体を流すことと、
プラズマがない状態で、前記内部処理容積の中で前記ホウ素含有前駆体及び前記窒素含有前駆体を熱分解し、前記基板上の誘電体層の表面において及びその下方で形成された高アスペクト比フィーチャデフィニションの少なくとも1つ以上の側壁及び底面の上に窒化ホウ素層を堆積することと
を含み、
前記ホウ素含有前駆体及び前記窒素含有前駆体において、Rは、炭素数1から5の低級アルキル基である、方法。 - 基板を処理する方法であって、
ホウ素含有前駆体を処理チャンバの内部処理容積の中に流すことであって、
であるホウ素含有前駆体を流すことと、
窒素含有前駆体を前記内部処理容積の中に流すことであって、NR3である窒素含有前駆体を流すことと、
プラズマがない状態で、前記内部処理容積の中で前記ホウ素含有前駆体及び前記窒素含有前駆体を熱分解し、前記基板上の誘電体層の表面において及びその下方で形成された高アスペクト比フィーチャデフィニションの少なくとも1つ以上の側壁及び底面の上に窒化ホウ素層を堆積することと
を含み、
前記ホウ素含有前駆体及び前記窒素含有前駆体において、Rは、炭素数1から5の低級アルキル基である、方法。 - 基板を処理する方法であって、
リガンドを含む有機金属含有前駆体ガスを処理チャンバの内部処理容積の中に流すことと、
前記有機金属含有前駆体ガスに含まれる前記リガンドと同一のリガンドを含む非金属前駆体ガスを前記内部処理容積の中に流すことと、
前記内部処理容積の中で前記リガンドを含む前記有機金属含有前駆体ガス及び前記リガンドを含む前記非金属前駆体ガスを熱分解し、前記基板上の誘電体層の表面における及びその下方のフィーチャデフィニションの少なくとも1つ以上の側壁及び底面の上に金属含有層を堆積することと
を含み、
前記有機金属含有前駆体ガスが、ビス(シクロペンタジエニル)コバルト(II)(Co(C5H5)2)、ビス(エチルシクロペンタジエニル)コバルト(II)(C14H18Co)、ビス(ペンタメチルシクロペンタジエニル)コバルト(II)(C20H30Co)、及びこれらの組み合わせからなる群から選択されたコバルト含有化合物である、方法。 - 前記リガンドを含む前記非金属前駆体ガスが、一酸化炭素(CO)である、請求項9に記載の方法。
- 前記リガンドを含む前記非金属前駆体ガスが、シクロペンタジエンを含む、請求項9に記載の方法。
- 前記有機金属含有前駆体ガス及び前記非金属前駆体ガスを熱分解することが、前記有機金属含有前駆体ガス及び前記非金属前駆体ガスを摂氏300度から摂氏550度の温度で加熱することを含む、請求項9に記載の方法。
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US201562142571P | 2015-04-03 | 2015-04-03 | |
US62/142,571 | 2015-04-03 | ||
PCT/US2016/024723 WO2016160811A1 (en) | 2015-04-03 | 2016-03-29 | Process of filling the high aspect ratio trenches by co-flowing ligands during thermal cvd |
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US11264474B1 (en) * | 2020-08-18 | 2022-03-01 | Nanya Technology Corporation | Semiconductor device with boron nitride layer and method for fabricating the same |
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US3375274A (en) | 1964-11-20 | 1968-03-26 | Olin Mathieson | Alkylene borazine polymers |
US6967405B1 (en) * | 2003-09-24 | 2005-11-22 | Yongsik Yu | Film for copper diffusion barrier |
US20050095859A1 (en) | 2003-11-03 | 2005-05-05 | Applied Materials, Inc. | Precursor delivery system with rate control |
US7429402B2 (en) | 2004-12-10 | 2008-09-30 | Applied Materials, Inc. | Ruthenium as an underlayer for tungsten film deposition |
US7345184B2 (en) * | 2005-03-31 | 2008-03-18 | Tokyo Electron Limited | Method and system for refurbishing a metal carbonyl precursor |
US20070234955A1 (en) * | 2006-03-29 | 2007-10-11 | Tokyo Electron Limited | Method and apparatus for reducing carbon monoxide poisoning at the peripheral edge of a substrate in a thin film deposition system |
US8084105B2 (en) | 2007-05-23 | 2011-12-27 | Applied Materials, Inc. | Method of depositing boron nitride and boron nitride-derived materials |
US8148269B2 (en) * | 2008-04-04 | 2012-04-03 | Applied Materials, Inc. | Boron nitride and boron-nitride derived materials deposition method |
US20090286402A1 (en) * | 2008-05-13 | 2009-11-19 | Applied Materials, Inc | Method for critical dimension shrink using conformal pecvd films |
US8563090B2 (en) | 2008-10-16 | 2013-10-22 | Applied Materials, Inc. | Boron film interface engineering |
US7910491B2 (en) * | 2008-10-16 | 2011-03-22 | Applied Materials, Inc. | Gapfill improvement with low etch rate dielectric liners |
US8865594B2 (en) | 2011-03-10 | 2014-10-21 | Applied Materials, Inc. | Formation of liner and barrier for tungsten as gate electrode and as contact plug to reduce resistance and enhance device performance |
US8927405B2 (en) * | 2012-12-18 | 2015-01-06 | International Business Machines Corporation | Accurate control of distance between suspended semiconductor nanowires and substrate surface |
US9129911B2 (en) | 2013-01-31 | 2015-09-08 | Applied Materials, Inc. | Boron-doped carbon-based hardmask etch processing |
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- 2016-03-29 KR KR1020177031923A patent/KR102457674B1/ko active IP Right Grant
- 2016-03-29 WO PCT/US2016/024723 patent/WO2016160811A1/en active Application Filing
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US10128150B2 (en) | 2018-11-13 |
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CN107534013B (zh) | 2021-10-26 |
US20160293483A1 (en) | 2016-10-06 |
US20190074218A1 (en) | 2019-03-07 |
WO2016160811A1 (en) | 2016-10-06 |
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