JP6908322B2 - 圧電素子 - Google Patents
圧電素子 Download PDFInfo
- Publication number
- JP6908322B2 JP6908322B2 JP2016173537A JP2016173537A JP6908322B2 JP 6908322 B2 JP6908322 B2 JP 6908322B2 JP 2016173537 A JP2016173537 A JP 2016173537A JP 2016173537 A JP2016173537 A JP 2016173537A JP 6908322 B2 JP6908322 B2 JP 6908322B2
- Authority
- JP
- Japan
- Prior art keywords
- thin film
- piezoelectric
- piezoelectric thin
- piezoelectric element
- film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
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- 239000010409 thin film Substances 0.000 claims description 153
- 239000010408 film Substances 0.000 claims description 43
- 239000000758 substrate Substances 0.000 claims description 31
- 239000013078 crystal Substances 0.000 claims description 30
- 230000000694 effects Effects 0.000 claims description 8
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 17
- 230000005684 electric field Effects 0.000 description 17
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 16
- 229910052710 silicon Inorganic materials 0.000 description 16
- 239000010703 silicon Substances 0.000 description 16
- 229910052751 metal Inorganic materials 0.000 description 10
- 239000002184 metal Substances 0.000 description 10
- 238000006073 displacement reaction Methods 0.000 description 8
- 229910004298 SiO 2 Inorganic materials 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N nitrogen Substances N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 229910052814 silicon oxide Inorganic materials 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 230000006872 improvement Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 4
- 238000004544 sputter deposition Methods 0.000 description 4
- 239000010936 titanium Substances 0.000 description 4
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 3
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 3
- 229910052451 lead zirconate titanate Inorganic materials 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 239000011733 molybdenum Substances 0.000 description 3
- -1 scandium aluminum Chemical compound 0.000 description 3
- 239000002356 single layer Substances 0.000 description 3
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 238000005452 bending Methods 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- 229910001882 dioxygen Inorganic materials 0.000 description 2
- 238000007667 floating Methods 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052757 nitrogen Inorganic materials 0.000 description 2
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen(.) Chemical compound [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 238000005546 reactive sputtering Methods 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 229910052706 scandium Inorganic materials 0.000 description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 description 2
- 230000007480 spreading Effects 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- 229910052984 zinc sulfide Inorganic materials 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910000679 solder Inorganic materials 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Landscapes
- General Electrical Machinery Utilizing Piezoelectricity, Electrostriction Or Magnetostriction (AREA)
- Piezo-Electric Transducers For Audible Bands (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016173537A JP6908322B2 (ja) | 2016-09-06 | 2016-09-06 | 圧電素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2016173537A JP6908322B2 (ja) | 2016-09-06 | 2016-09-06 | 圧電素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2018041788A JP2018041788A (ja) | 2018-03-15 |
| JP2018041788A5 JP2018041788A5 (lv) | 2019-09-12 |
| JP6908322B2 true JP6908322B2 (ja) | 2021-07-21 |
Family
ID=61626328
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2016173537A Active JP6908322B2 (ja) | 2016-09-06 | 2016-09-06 | 圧電素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP6908322B2 (lv) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7293655B2 (ja) * | 2019-01-10 | 2023-06-20 | ブラザー工業株式会社 | 圧電アクチュエータ |
| JP7156558B2 (ja) * | 2019-12-25 | 2022-10-19 | 株式会社デンソー | 圧電素子、圧電装置、および圧電素子の製造方法 |
| JP7359169B2 (ja) * | 2020-11-03 | 2023-10-11 | 株式会社デンソー | 圧電素子、圧電装置、および圧電素子の製造方法 |
| WO2022097578A1 (ja) * | 2020-11-03 | 2022-05-12 | 株式会社デンソー | 圧電素子、圧電装置、および圧電素子の製造方法 |
| JP7528804B2 (ja) | 2021-02-03 | 2024-08-06 | 株式会社デンソー | 圧電素子、圧電装置、および圧電素子の製造方法 |
| CN113596690B (zh) * | 2021-08-13 | 2023-03-14 | 中北大学 | 新型压电式mems麦克风的结构及装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001077438A (ja) * | 1999-09-07 | 2001-03-23 | Matsushita Electric Ind Co Ltd | 圧電素子、インクジェット式記録ヘッド、およびこれらの製造方法 |
| JP2009170631A (ja) * | 2008-01-16 | 2009-07-30 | Panasonic Corp | 圧電素子とその製造方法およびこれを用いた圧電応用デバイス |
| JP5707323B2 (ja) * | 2008-06-30 | 2015-04-30 | ザ・リージェンツ・オブ・ザ・ユニバーシティ・オブ・ミシガンＴｈｅ Ｒｅｇｅｎｔｓ Ｏｆ Ｔｈｅ Ｕｎｉｖｅｒｓｉｔｙ Ｏｆ Ｍｉｃｈｉｇａｎ | 圧電型ｍｅｍｓマイクロフォン |
-
2016
- 2016-09-06 JP JP2016173537A patent/JP6908322B2/ja active Active
Also Published As
| Publication number | Publication date |
|---|---|
| JP2018041788A (ja) | 2018-03-15 |
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