JP6907406B2 - Manufacturing method of vaporizer, substrate processing equipment and semiconductor equipment - Google Patents

Description

The present invention relates to a method for manufacturing a vaporizer, a substrate processing device, and a semiconductor device.

As a method of obtaining a more dense film from a film formed by an insulator coating method, a chemical vapor deposition method, or the like, the film is reformed by supplying a reforming gas to the film. For example, as in the technique disclosed in Patent Document 1, as a method of obtaining a more dense oxide film such as a SiO film from a film of an insulating material _{, a gas containing hydrogen peroxide (H 2} O ₂ ) is applied to the film of the insulating material. It is known to feed and modify the membrane.

International Publication No. 2013/077321

As _{one of the methods for producing a desired processing gas such as a gas containing H 2} O ₂ , it is conceivable to vaporize the liquid raw material with a vaporizer to obtain a desired gas. However, with the conventional vaporizer, it is difficult to precisely control or control the temperature of the liquid raw material introduced into the vaporizer.

According to one aspect of the present invention, the liquid raw material supply unit for supplying the liquid raw material, the vaporization container constituting the vaporization chamber in which the liquid raw material supplied by the liquid raw material supply unit is vaporized internally, and the vaporization container are provided. A vaporizer including a first heater for heating and a heat insulating member provided so as to block the heat released from the first heater from the liquid raw material supply unit is provided.

According to the present invention, in a vaporizer that vaporizes a liquid raw material, the temperature of the liquid raw material introduced into the vaporizer can be precisely controlled or controlled.

It is a schematic block diagram which shows the structure of the substrate processing apparatus which concerns on one Embodiment. It is a vertical cross-sectional schematic diagram which shows the structure of the processing furnace provided in the substrate processing apparatus which concerns on one Embodiment. It is a vertical cross-sectional structure diagram which shows the outline of the vaporizer provided in the substrate processing apparatus which concerns on one Embodiment. (A) is a vertical cross-sectional configuration diagram showing an outline of a vaporizer in the present embodiment, and (B) is a schematic view of a gap of the vaporizer shown in (A). (A) is a diagram showing the calculation result of the temperature of the gas flowing between the parallel plates of 1.0 mm, and (B) is a diagram showing the calculation result of the temperature of the gas flowing between the parallel plates of 0.8 mm. Is. It is a figure which shows the calculation result of the pressure rise amount at the time of flowing water vapor in a gap at 25 slm. It is a schematic block diagram of the controller included in the substrate processing apparatus which concerns on one Embodiment. It is a flow chart which shows the pre-processing process with respect to the substrate processing process which concerns on one Embodiment. It is a flow figure which shows the substrate processing process which concerns on one Embodiment. It is a vertical cross-sectional structure view which shows the outline of the vaporizer which concerns on 2nd Embodiment. (A) is a vertical cross-sectional structure diagram showing the outline of the vaporizer according to the present embodiment, and (B) is a vertical cross-sectional structure diagram showing the outline of the vaporizer according to the comparative example.

<One Embodiment of the present invention>
Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to the drawings.

(1) Configuration of Substrate Processing Device First, a configuration example of the substrate processing device 10 that implements the method for manufacturing a semiconductor device according to the present embodiment will be described with reference to FIGS. 1 and 2. The substrate processing apparatus 10 is _{an apparatus for processing a substrate using a liquid raw material containing hydrogen peroxide (H 2} O ₂ ), that is, a processing gas generated by vaporizing a hydrogen peroxide solution. For example, it is an apparatus for processing a wafer 200 as a substrate made of silicon or the like. The substrate processing apparatus 10 is suitable for processing a wafer 200 having a concavo-convex structure (void) which is a fine structure. In the present embodiment, the groove of the microstructure _{is filled with a film of polysilazane (SiH 2} NH) which is a silicon-containing film, and the SiO film is formed by treating the polysilazane film with a processing gas.

In the present embodiment, as the vaporized or atomized with H ₂ O ₂ (i.e., of H ₂ O ₂ gas state) is referred to as H ₂ O ₂ gas, the process gas containing at least H ₂ O ₂ gas Gas _{A liquid aqueous solution containing H 2} O ₂ is called a hydrogen peroxide solution or a liquid raw material.

(Processing container)
As shown in FIG. 1, the processing furnace 202 constituting the substrate processing apparatus 10 includes a processing container (reaction tube) 203. The processing container 203 is formed in a cylindrical shape with an open lower end. A processing chamber 201 is formed in the hollow portion of the processing container 203, and the wafer 200 as a substrate can be accommodated in a horizontal posture and vertically arranged in multiple stages by a boat 217 described later.

At the lower part of the processing container 203, a seal cap 219 is provided as a furnace palate body capable of airtightly sealing (closing) the lower end opening (furnace mouth) of the processing container 203. The seal cap 219 is configured to come into contact with the lower end of the processing container 203 from the lower side in the vertical direction. The processing chamber 201, which is the processing space for the substrate, is composed of the processing container 203 and the seal cap 219.

(Board holding part)
The boat 217 as a substrate holding portion is configured to hold a plurality of wafers 200 in multiple stages. The boat 217 includes a plurality of columns 217a erected between the bottom plate 217b and the top plate 217c. The plurality of wafers 200 are aligned horizontally on the support column 217a and held in multiple stages in the tube axis direction.

A heat insulating body 218 is provided in the lower part of the boat 217 so that the heat from the first heating portion 207 is less likely to be transferred to the seal cap 219 side.

(Elevating part)
Below the processing container 203, a boat elevator is provided as an elevating part for raising and lowering the boat 217. The boat elevator is provided with a seal cap 219 that seals the hearth when the boat 217 is lifted by the boat elevator. A boat rotation mechanism 267 for rotating the boat 217 is provided on the side of the seal cap 219 opposite to the processing chamber 201.

(1st heating part)
On the outside of the processing container 203, a first heating unit 207 for heating the wafer 200 in the processing container 203 is provided concentrically surrounding the side wall surface of the processing container 203. The first heating unit 207 is provided by being supported by the heater base 206. As shown in FIG. 2, the first heating unit 207 includes first to fourth heater units 207a to 207d. In the processing container 203, as a temperature detector for detecting the wafer 200 or the ambient temperature for each of the first to fourth heater units 207a to 207d as a heating unit, for example, a first to fourth temperature sensor such as a thermoelectric pair. 263a to 263d are provided between the processing container 203 and the boat 217, respectively.

A controller 121, which will be described later, is electrically connected to the first heating unit 207 and the first to fourth temperature sensors 263a to 263d, respectively. Further, as temperature detectors for detecting the temperatures of the first to fourth heater units 207a to 207d, a first external temperature sensor 264a composed of a thermocouple, a second external temperature sensor 264b, and a third An external temperature sensor 264c and a fourth external temperature sensor 264d may be provided, respectively. The first to fourth external temperature sensors 264a to 264d are connected to the controller 121, respectively.

(Gas supply unit (gas supply system))
As shown in FIGS. 1 and 2, between the processing container 203 and the first heating unit 207, the processing gas supply nozzle 501a and the oxygen-containing gas supply nozzle 502a are located along the side portion of the outer wall of the processing container 203. Is provided. The tips (downstream ends) of the processing gas supply nozzle 501a and the oxygen-containing gas supply nozzle 502a are airtightly inserted into the processing container 203 from the top of the processing container 203, respectively. A supply hole 501b and a supply hole 502b are provided at the tips of the processing gas supply nozzle 501a and the oxygen-containing gas supply nozzle 502a located inside the processing container 203, respectively.

A gas supply pipe 602c is connected to the upstream end of the oxygen-containing gas supply nozzle 502a. Further, the gas supply pipe 602c is provided with a valve 602a, a mass flow controller (MFC) 602b constituting a gas flow rate control unit, a valve 602d, and an oxygen-containing gas heating unit 602e in this order from the upstream side. As the oxygen-containing gas, for example, a gas containing at least one or more of _{oxygen (O 2} ) gas, ozone (O ₃ ) gas, and nitrous oxide (N _{2 O) gas is used. In this embodiment, O 2} gas is used as the oxygen-containing gas. The oxygen-containing gas heating unit 602e is provided to heat the oxygen-containing gas.

The downstream end of the processing gas supply pipe 289a for supplying the processing gas is connected to the upstream end of the processing gas supply nozzle 501a. Further, the processing gas supply pipe 289a is provided with a vaporizer 100 and a valve 289b as a processing gas generating unit that vaporizes the liquid raw material to generate the processing gas from the upstream side. In this embodiment, a gas containing at least _{H 2} O _{2 is used as the processing gas.} Further, a pipe heater 289c composed of a jacket heater or the like is provided around the processing gas supply pipe 289a. The processing gas supply pipe 289a and the processing gas supply nozzle 501a constitute a vaporization gas pipe that supplies the vaporized gas generated by the vaporizer 100 into the processing chamber 201.

The vaporizer 100 is connected to a liquid raw material supply system 300 that supplies the liquid raw material of the processing gas to the vaporizer 100 and a carrier gas supply unit (carrier gas supply system) that supplies the carrier gas to the vaporizer 100. Has been done. The vaporized gas of the liquid raw material generated in the vaporizer 100 is sent (discharged) to the processing gas supply pipe 289a as a processing gas together with the carrier gas.

The liquid raw material supply system 300 includes a liquid raw material supply source 301, a valve 302, and a liquid flow rate controller (LMFC) 303 that controls the flow rate of the liquid raw material supplied to the vaporizer 100 from the upstream side. The carrier gas supply unit includes a carrier gas supply pipe 601c, a carrier gas valve 601a, an MFC 601b as a carrier gas flow rate control unit, a carrier gas valve 601d, and the like. _{In this embodiment, O 2} gas, which is an oxygen-containing gas, is used as the carrier gas. However, as the carrier gas, a gas containing _{at least one or more oxygen-containing gas (in addition to O 2} gas, for example, O ₃ gas, NO gas, etc.) can be used. Further, as the carrier gas, a gas having low reactivity with respect to the wafer 200 or the film formed on the wafer 200 can also be used. For example, N ₂ gas or noble gas can be used.

Here, at least the processing gas supply nozzle 501a and the supply hole 501b form a processing gas supply unit. The processing gas supply unit may further include a processing gas supply pipe 289a, a valve 289b, a vaporizer 100, and the like. Further, at least the oxygen-containing gas supply nozzle 502a and the supply hole 502b constitute an oxygen-containing gas supply unit. The oxygen-containing gas supply unit may further include a gas supply pipe 602c, an oxygen-containing gas heating unit 602e, a valve 602d, an MFC 602b, a valve 602a, and the like. Further, the processing gas supply unit and the oxygen-containing gas supply unit constitute a gas supply unit (gas supply system).

(Vaporizer)
Subsequently, the outline of the structure of the vaporizer 100 will be described with reference to FIG.
The vaporizer 100 vaporizes the liquid raw material supply unit 150 (atomizer, atomizer unit) that supplies the liquid raw material into the vaporizer container 111 by heating the liquid raw material supplied into the vaporizer container 111 with the vaporizer heater 113. It is composed of a vaporizing unit 108 and a vaporizing unit 108. The vaporizer 100 vaporizes the liquid raw material by supplying fine droplets of the liquid raw material atomized by the liquid raw material supply unit 150 into the vaporizing container 111 heated by the vaporizer heater 113. Further, the vaporization container 111 constituting the vaporization unit 108 and the liquid raw material supply unit 150 are integrally formed. Further, both the vaporization container 111 and the liquid raw material supply unit 150 are made of a quartz member (quartz glass).

(Vaporization department)
The detailed structure of the vaporization unit 108 will be described. The vaporization unit 108 is mainly discharged from the vaporization container 111, the vaporization chamber 112 formed inside the vaporization container 111, the vaporizer heater 113 as the first heater for heating the vaporization container 111, and the vaporizer heater 113. It is provided with a metal block 116 for transmitting the heat to the vaporization container 111, an exhaust port 114, and a temperature sensor 115 composed of a thermocouple for measuring the temperature of the vaporization container 111.

Further, the vaporization unit 108 can be divided into two blocks, an outer block 110a and an inner block 110b. The outer block 110a has a cylindrical shape, and the inner block 110b, which has a cylindrical shape, is configured to be inserted inside the cylindrical shape. The upper portion (tip portion) of the inner block 110b is formed in a dome shape (spherical shape). Further, a gap 112b is provided between the cylindrical inner peripheral wall surface of the outer block 110a and the outer peripheral wall surface of the outer block 110a. The outer block 110a includes an outer heater 113a described later, a part of the metal block 116, a part of the vaporization container 111 (quartz member 111a described later), and a part of the heat insulating member 160. The inner block 110b includes an inner heater 113b described later, a part of the metal block 116, a part of the vaporization container 111 (quartz member 111b described later), a part of the heat insulating member 160, and a temperature sensor 115.

The vaporizer heater 113 is composed of an outer heater 113a built in the outer block 110a and an inner heater 113b built in the inner block 110b. The outer heater 113a and the inner heater 113b are controlled based on the temperature data measured by the temperature sensor 115, respectively.

The upper space 112a formed between the lower surface of the ceiling wall 161 of the vaporization container 111 to which the liquid raw material supply unit 150 is connected and the upper part of the inner block 110b, and the gap 112b form the vaporization chamber 112. Further, a quartz member 111a as an outer container portion formed on a surface exposed to the vaporization chamber 112 of the outer block 110a and a quartz member 111b as an inner container portion formed on a surface exposed to the vaporization chamber 112 of the inner block 110b. And the ceiling wall 161 constitute the vaporization container 111. That is, the vaporization container 111 has a double-tube structure composed of a quartz member 111a and a quartz member 111b.

That is, the vaporization container 111 constitutes a vaporization chamber 112 for vaporizing the liquid raw material supplied by the liquid raw material supply unit 150, and the vaporization gas generated in the vaporization chamber 112 is treated as a processing gas together with the carrier gas at the exhaust port 114. Is exhausted (delivered) from the processing gas supply pipe 289a.

The surface of the vaporization container 111 that is exposed to the vaporization chamber 112, that is, the surface that comes into contact with the liquid raw material or the vaporization gas is entirely made of quartz, which is a metal-free material. Therefore, it is possible to prevent metal contamination caused by the reaction of the material of the vaporization vessel with H ₂ O _{2 having high reactivity with metal.}

(Liquid raw material supply section (atomization section, atomizer section))
The liquid raw material supply unit 150 is provided in the upper part of the vaporization container 111. Further, the liquid raw material supply unit 150 is provided above the upper end of the metal block 116 and above the vaporization chamber 112. In the present embodiment, the vaporization container 111 and the liquid raw material supply unit 150 are integrally formed, and both are partitioned by the ceiling wall 161. However, both can be configured as separable units.

The liquid raw material supply unit 150 includes a liquid raw material introduction port 151 into which the liquid raw material supplied from the LMFC 303 is introduced, a discharge port 152 for discharging the liquid raw material introduced from the liquid raw material introduction port 151 into the vaporization container 111, and a liquid. Introduced from the liquid raw material introduction pipe 158 that introduces the liquid raw material from the raw material introduction port 151 to the discharge port 152, the carrier gas introduction port 153 into which the carrier gas supplied from the carrier gas supply pipe 601c is introduced, and the carrier gas introduction port 153. It is composed of a carrier gas outlet 155 that ejects the generated carrier gas into the vaporization container 111.

Further, a buffer space 154 is formed between the carrier gas introduction port 153 and the carrier gas outlet 155. The carrier gas outlet 155 is composed of a narrow gap formed between the edge of the opening formed in the ceiling wall 161 and the liquid raw material introduction pipe 158 inserted in the opening. The carrier gas outlet 155 is formed in the vicinity of the discharge port 152 at the tip of the liquid raw material introduction pipe 158.

That is, the carrier gas introduced into the carrier gas introduction port 153 is injected into the upper space 112a from the carrier gas injection port 155 formed around the discharge port 152 of the liquid raw material introduction pipe 158 via the buffer space 154. Will be done. Since the flow of the carrier gas passing through the carrier gas outlet 155 having a narrowly restricted structure is very high, the liquid raw material droplets discharged from the tip of the discharge port 152 at the time of ejection Is atomized. In this way, the liquid raw material discharged from the discharge port 152 is injected together with the carrier gas into the upper space 112a in the vaporization container 111 in the state of fine droplets.

(Structure of heater and its peripheral part)
Since the quartz member constituting the vaporization container 111 has low thermal conductivity, it is difficult to uniformly transfer the heat from the heater to the liquid raw material for vaporization as compared with the metal vaporization container. Therefore, in the present embodiment, a metal block as a first metal block is formed between the outer heater 113a and the vaporization container 111 so as to be heated by the outer heater 113a and indirectly transfer heat to the quartz member of the vaporization container 111. 116 is inserted. The metal block 116 is provided from below to the same height position as the ceiling wall 161 or from below to a height position lower than the ceiling wall 161 so as to cover the outer surface of the quartz member 111a. From the viewpoint of uniformly heating the quartz member 111a, it is desirable that the quartz member 111a is provided so as to cover the entire surface of the quartz member 111a (that is, the metal block 116 extends to the same height as the ceiling wall 161). However, in the present embodiment, since the heat insulating member 160 described later is provided between the metal block 116 and the liquid raw material supply unit 150, the metal is corresponding to the thickness of the heat insulating member 160 required to obtain a sufficient heat insulating effect. The height of the upper end of the block 116 is set lower than the ceiling wall 161.

In this embodiment, the metal block 116 is made of aluminum. Although the quartz member has lower thermal conductivity than metal, the heat from the outer heater 113a can be evenly transferred to the vaporization container 111 by inserting a metal block having high thermal conductivity.

Further, the heat transfer paste 117 is filled between the vaporizer heater 113 and the metal block 116, and between the metal block 116 and the vaporization container 111. By filling the gaps formed between these with the heat transfer paste 117, the gaps can be eliminated and heat can be transferred more uniformly. In particular, if there is a gap between the metal block 116 and the vaporization container 111, temperature unevenness in the vaporization container 111 is likely to occur, so it is effective to fill the gap with the heat transfer paste 117.

(Insulation structure)
The periphery of the vaporization portion 108 is covered with a heat insulating member 160 made of a heat insulating cloth. Specifically, the heat insulating member 160 is provided so as to cover at least a part of the surface of the metal block 116, specifically, the upper surface, the lower surface, and the outer peripheral surface. In particular, the portion of the heat insulating member 160 provided so as to cover the upper surface of the metal block 116 is between the outer heater 113a and the liquid raw material supply unit 150 (more specifically, the metal block 116 and the liquid raw material supply unit in the outer block 110a). It is provided between 150 and 150) and is configured to block (shield) the heat released from the outer heater 113a from the liquid raw material supply unit 150. That is, the heat insulating member 160 is provided so that the liquid raw material supply unit 150 is sufficiently thermally isolated from the vaporizer heater 113 (particularly the outer heater 113a which is close to the liquid raw material supply unit 150).

The term "heat release" as used herein means to include at least either radiation or conduction of heat. More specifically, the heat released from the outer heater 113a cut off by the heat insulating member 160 is a) the heat indirectly radiated from the metal block 116 heated by the outer heater 113a, and b) the metal block 116. Heat that is indirectly conducted through the metal block 116, c) heat that is directly radiated from the outer heater 113a (when the outer heater 113a is exposed from the metal block 116), and the like can be considered. In the present embodiment, by providing the heat insulating member 160, at least the heat of a) and b) is blocked from the liquid raw material supply unit 150.

Here, in the vaporizer not provided with the heat insulating member 160, the temperature of the vaporization container 111 (vaporization chamber 112) is controlled to be a desired temperature, while the temperature of the liquid raw material in the liquid raw material supply unit 150 is controlled. It receives thermal interference from the vaporizer heater 113 that heats the vaporization chamber 112. Therefore, it has been difficult to control and control the temperature of the liquid raw material in the liquid raw material supply unit 150 so as to be a desired temperature independent of the temperature of the vaporization container 111. In particular, _{when a liquid raw material containing a compound having a property of rapidly decomposing as the temperature rises, such as H 2} O ₂ , is used, if the temperature of the liquid raw material is not controlled or controlled, it is vaporized in the vaporization chamber 112. The concentration of the compound in the liquid raw material before the above fluctuates without being controlled or controlled, and as a result, the concentration of the compound in the vaporized gas generated in the vaporization chamber 112 unintentionally varies.

Therefore, in the present embodiment, by providing the heat insulating member 160, thermal interference from the vaporizer heater 113 with respect to the liquid raw material supply unit 150 is suppressed, and the temperature control and control of the liquid raw material in the liquid raw material supply unit 150 is facilitated. There is. In this embodiment, the vaporizer heater 113 is controlled so that the vaporizer container 111 is heated to 180 to 210 ° C. On the other hand, by providing the heat insulating member 160, thermal interference from the vaporizer heater 113 is suppressed, and the temperature of the liquid raw material in the liquid raw material supply unit 150 is controlled to be 100 ° C. or lower. Further, according to the present embodiment, the temperature of the liquid raw material in the liquid raw material supply unit 150 can be suppressed to a predetermined temperature (for example, 100 ° C.) or less without providing the cooling means. According to the verification by the inventor, when the temperature of the liquid raw material containing _{H 2} O _{2 is 100 ° C. or lower, the concentration of H 2} O _{2 in} the liquid is stable and the concentration of the obtained vaporized gas is also stable. I know. The notation of a numerical range such as "180 to 210 ° C." in the present specification means that the lower limit value and the upper limit value are included in the range. Therefore, for example, "180 to 210 ° C." means "180 ° C. or higher and 210 ° C. or lower." The same applies to other numerical ranges.

The material, thickness, structure, etc. of the heat insulating member 160 are selected so that the temperature of the liquid raw material in the liquid raw material supply unit 150 is 100 ° C. or lower with respect to the heating by the vaporizer heater 113. In this embodiment, a heat insulating cloth having a thermal conductivity of 0.1 to 0.3 W / mk is used as the heat insulating member 160. As a more specific embodiment, in order to keep the temperature of the liquid raw material in the liquid raw material supply unit 150 at 100 ° C. or lower, the temperature of the liquid raw material supply unit 150 measured by the temperature sensor 119 described later is 100. It is desirable to configure the heat insulating member 160 so that the temperature is below ° C.

In the present embodiment, the portion of the heat insulating member 160 provided on the upper surface of the metal block 116 can be replaced with another heat insulating material. For example, resin plates such as polytetrafluoroethylene (PTFE), perfluoroalkoxy alkane (PFA), polybenzimidazole (PBI), and polyetheretherketone (PEEK), which have the same thermal conductivity as adiabatic cloth, and adiabatic. It may replace a part of the member 160. Further, the metal block 116 can be replaced with the heat insulating member 160 by forming a part of the metal block 116 into a porous structure to provide a heat insulating function.

A temperature sensor 119 composed of a thermocouple is mounted on the outer surface of the liquid raw material introduction pipe 158 in the buffer space 154. The temperature sensor 119 measures the temperature of the liquid raw material supply unit 150, more specifically, the temperature of the liquid raw material introduction pipe 158. By providing the temperature sensor 119 so as to measure the temperature of the outer surface of the liquid raw material introduction pipe 158, the temperature of the liquid raw material passing through the liquid raw material introduction pipe 158 can be indirectly measured. In the present embodiment, the temperature sensor 119 is connected to the controller 121, and the temperature of the liquid raw material is monitored by the controller 121.

The vaporizer 100 in the present embodiment is provided with one temperature sensor 119 on the outer surface of the liquid raw material introduction pipe 158, but may be provided at other locations or a plurality of temperature sensors 119. For example, it may be provided on the inner surface of the liquid raw material introduction pipe 158, the side surface of the buffer space 154, or the like. When the temperature sensor 119 is provided on the outer surface of the liquid raw material introduction pipe 158, it may be provided inside the buffer space 154 as in the present embodiment, or if it is difficult to provide the temperature sensor 119 inside the buffer space 154, the outside thereof. It may be provided (particularly on the upstream side of the liquid raw material introduction pipe 158).

If the temperature measured by the temperature sensor 119 exceeds a desired temperature due to the interference of heat emitted from the vaporizer heater 113, the temperature data measured by the temperature sensors 115 and 119 is used as the basis for the temperature data. The temperature of the vaporizer heater 113 may be controlled. In this case, the temperature data measured by the temperature sensors 115 and 119 are output to the temperature control controller 106, respectively, and the temperature control controller 106 controls the temperature of the vaporizer heater 113 based on the temperature data. However, when the heat insulating member 160 sufficiently suppresses the interference of the heat supplied from the vaporizer heater 113 with respect to the liquid raw material supply unit 150 (that is, the liquid raw material supply unit 150 is thermally with respect to the vaporizer heater 113). The vaporizer heater 113 is not controlled based on the temperature data measured by the temperature sensor 119.

Further, as in the second embodiment of the present invention described later, a heater for heating the liquid raw material supply unit 150 is provided separately from the vaporizer heater 113 so that the temperature is maintained at a desired temperature of 100 ° C. or lower. It is also possible to control the temperature of the liquid raw material.

(Double tube structure of vaporization container)
Further, in the present embodiment, the vaporization container 111 has a double tube structure in order to transfer the heat from the heater to the liquid raw material more efficiently. The liquid raw material droplets supplied from the liquid raw material supply unit 150 are heated and vaporized by passing through the upper space 112a and the cylindrical gap 112b forming the tubular gas flow path.

Between the metal block 116 of the outer block 110a and the vaporization container 111, a heat-resistant O-ring 118 is provided to prevent the vaporization container 111 from being damaged due to direct contact between the metal block 116 and the vaporization container 111. It is provided.

The exhaust port 114 is made of a quartz member like the vaporization container 111. The exhaust port 114 has a flange structure at the connection interface portion with the processing gas supply pipe 289a, and seals the connection portion with the processing gas supply pipe 289a with an O-ring interposed therebetween.

Here, the width of the gap 112b (width of the tubular gas flow path) is 0.6 mm or more and 0.8 mm or less. Hereinafter, the grounds thereof will be described with reference to FIGS. 4 to 6.

The analysis of the gas temperature flowing through the gap 112b shown in FIG. 4 (A) was performed on the assumption that it was a heat transfer problem of convection of gas flowing between the heated parallel plates as shown in FIG. 4 (B). The gas temperature flowing between the parallel plates was calculated by the following difference formula.

Here, x indicates the coordinates in the length direction of the flow path, and y indicates the coordinates in the width direction of the flow path. Further, T indicates the gas temperature, u indicates the velocity component, and α indicates the temperature conductivity.

FIG. 5A is a diagram showing a calculation result when the distance between the parallel plates is 1.0 mm, and FIG. 5B is a calculation result when the distance between the parallel plates is 0.8 mm. It is a figure which shows. In both cases, the length L of the flow path was 0.15 m, and the parallel flat plate was heated to 200 ° C. for each calculation. In addition, the processing conditions other than the distance between the parallel plates were the same. The vertical axis of FIG. 5 shows the gas temperature, and the horizontal axis shows the coordinate y in the width direction of the flow path.

As shown in FIGS. 5 (A) and 5 (B), in the vicinity of the inlet of the flow path (x = 0.05 m), the distance between the parallel flat plates is parallel as compared with the case of 1.0 mm. It was confirmed that the gas temperature at the center of the flow path (y = 0.4 mm) can be raised when the distance between the flat plates is 0.8 mm. Further, even in the vicinity of the outlet of the flow path (x = 0.10 m), the flow path is larger when the distance between the parallel plates is 0.8 mm than when the distance between the parallel plates is 1.0 mm. It was confirmed that the gas temperature at the center (y = 0.4 mm) of the above can be increased. That is, it is considered that the shorter the distance between the parallel plates, the higher the heat transfer efficiency and the higher the vaporization efficiency. In particular, it can be seen that the gas temperature can be sufficiently raised even at the center of the flow path by setting the distance between the parallel plates to 0.8 mm or less.

FIG. 6 is a diagram showing a calculation result of the amount of pressure increase in the vaporization chamber 112 when water vapor is flowed through the gap 112b at 25 slm. The vertical axis of FIG. 6 shows the amount of pressure increase, and the horizontal axis shows the width of the flow path.

As shown in FIG. 5, narrowing the width of the flow path of the vaporization chamber 112 (width of the gap 112b) improves the heat transfer efficiency and tends to stabilize the vaporization of the introduced droplets (mist). Become. On the other hand, as shown in FIG. 6, if the width of the flow path is too narrow, the pressure in the vaporization chamber 112 rises sharply, making it difficult for the droplets to vaporize, resulting in poor vaporization. Specifically, when the width of the flow path is 0.5 mm or less, the pressure is expected to rise sharply, resulting in poor vaporization. This is considered to be the same tendency for _{the H 2} O _{2 containing gas.} From these results, it can be seen that the width of the flow path needs to be 0.6 mm or more in order to prevent poor vaporization.

That is, considering the calculation results shown in FIGS. 5 and 6, the width of the gap 112b, which is the width of the flow path, is 0.8 mm or less, which can sufficiently raise the gas temperature at the center of the flow path. If it is 0.6 mm or more, which can prevent poor vaporization due to pressure rise, it is possible to suppress poor vaporization by reducing the amount of pressure rise while improving heat transfer efficiency and vaporization efficiency. Conceivable.

(Exhaust part)
One end of a gas exhaust pipe 231 for exhausting gas in the processing chamber 201 is connected below the processing container 203. The other end of the gas exhaust pipe 231 is connected to the vacuum pump 246 via an APC (Auto Pressure Controller) valve 255 as a pressure regulator. Further, a pressure sensor 223 as a pressure detector is provided on the upstream side of the APC valve 255. A pressure control controller 224 is electrically connected to the pressure sensor 223 and the APC valve 255. The pressure control controller 224 is configured to control the APC valve 255 at a desired timing so that the pressure in the processing chamber 201 becomes a desired pressure based on the pressure detected by the pressure sensor 223.

(Control unit)
As shown in FIG. 7, the controller 121, which is a control unit (control means), is configured as a computer including a CPU 121a, a RAM 121b, a storage device 121c, and an I / O port 121d. The RAM 121b, the storage device 121c, and the I / O port 121d are configured so that data can be exchanged with the CPU 121a via the internal bus 121e. An input / output device 122 configured as, for example, a touch panel or a display is connected to the controller 121.

The storage device 121c is composed of, for example, a flash memory, an HDD (Hard Disk Drive), or the like. In the storage device 121c, a control program for controlling the operation of the substrate processing device, a process recipe in which the procedures and conditions for substrate processing described later are described, and the like are readablely stored. The process recipes are combined so that the controller 121 can execute each procedure in the substrate processing step described later and obtain a predetermined result, and functions as a program. Hereinafter, this process recipe, control program, etc. are collectively referred to as a program. In addition, a process recipe is also simply referred to as a recipe. When the term program is used in the present specification, it may include only a recipe alone, a control program alone, or both. Further, the RAM 121b is configured as a memory area (work area) in which programs, data, and the like read by the CPU 121a are temporarily held.

The I / O port 121d includes the above-mentioned LMFC303, MFC601b, 602b, valves 601a, 601d, 602a, 602d, 302,289b, APC valve 255, first heating unit 207, and first to fourth temperature sensors 263a to 263d. , Boat rotation mechanism 267, pressure sensor 223, pressure control controller 224, temperature control controller 106, vaporizer heater 113, temperature sensors 115, 119, piping heater 289c, and the like.

The CPU 121a is configured to read and execute a control program from the storage device 121c and read a recipe from the storage device 121c in response to an input of an operation command from the input / output device 122 or the like. The CPU 121a adjusts the flow rate of the liquid raw material by the LMFC 303, adjusts the flow rate of the gas by the MFC 601b, 602b, and opens and closes the valves 601a, 601d, 602a, 602d, 302, 289b so as to follow the contents of the read recipe. Open / close adjustment operation of APC valve 255, temperature adjustment operation of first heating unit 207 based on first to fourth temperature sensors 263a to 263d, start and stop of vacuum pump 246, rotation speed adjustment operation of boat rotation mechanism 267. , The temperature adjustment operation of the vaporizer heater 113 and the pipe heater 289c via the temperature control controller 106, and the like are controlled.

The controller 121 executes the above-mentioned program stored in an external storage device (for example, magnetic tape, magnetic disk such as flexible disk or hard disk, optical disk such as CD, magneto-optical disk such as MO, semiconductor memory such as flash memory) 123. , Can be configured by installing on a computer. The storage device 121c and the external storage device 123 are configured as a computer-readable recording medium. Hereinafter, these are collectively referred to simply as a recording medium. In the present specification, when the term recording medium is used, it may include only the storage device 121c alone, it may include only the external storage device 123 alone, or it may include both of them. The program may be provided to the computer by using a communication means such as the Internet or a dedicated line without using the external storage device 123.

(2) Pretreatment Step Here, a pretreatment step performed before the modification treatment described later is performed on the wafer 200 as a substrate will be described with reference to FIG. As shown in FIG. 8, in the pretreatment step, the wafer 200 is carried into the coating device (not shown) (the substrate carrying step T10), and the polysilazane coating step T20 and the prebaking step T30 are performed on the wafer 200 in the coating device. Be given. In the polysilazane coating step T20, polysilazane is coated on the wafer 200 by the coating apparatus. In the prebaking step T30, the solvent is removed from the applied polysilazane by heating the wafer 200.
A polysilazane coating film, which is a silicon-containing film, is formed. After that, the wafer 200 is carried out from the coating device (board carrying-out step T40).

(3) Substrate Processing Step Next, a substrate processing step carried out as one step of the manufacturing process of the semiconductor device according to the present embodiment will be described with reference to FIG. Such a step is carried out by the above-mentioned substrate processing apparatus 10. In the present embodiment, as an example of such a substrate processing step, a step of modifying (oxidizing) a silicon-containing film formed on the wafer 200 as a substrate into a SiO film by using a gas containing _{H 2} O _{2 as a processing gas.} A case where (modification step) is performed will be described. In the following description, the operation of each part constituting the substrate processing apparatus is controlled by the controller 121.

(Board loading process (S10))
First, the wafer 200 is loaded into the boat 217, and the boat 217 is lifted by the boat elevator and carried into the processing container 203. In this state, the furnace opening, which is the opening of the processing furnace 202, is sealed by the seal cap 219.

(Pressure / temperature adjustment step (S20))
The vacuum pump 246 is controlled so that the pressure inside the processing container 203 becomes a desired pressure, and the atmosphere inside the processing container 203 is evacuated. Further, the oxygen-containing gas is supplied to the processing container 203 from the supply hole 502b. At this time, the pressure in the processing container 203 is measured by the pressure sensor 223, and the opening degree of the APC valve 255 is controlled based on the measured pressure. The pressure in the processing container 203 is adjusted to, for example, a slightly reduced pressure state (about 700 hPa to 1000 hPa). Further, the wafer 200 housed in the processing container 203 is heated by the first heating unit 207 so as to reach a desired first temperature, for example, 40 ° C. to 100 ° C.

Further, while heating the wafer 200, the boat rotation mechanism 267 is operated to start the rotation of the boat 217. The boat 217 is always in a rotated state at least until the reforming step (S30) described later is completed.

(Modification step (S30))
When the wafer 200 reaches a predetermined first temperature and the rotation speed desired by the boat 217 is reached, the liquid raw material is supplied from the liquid raw material supply system 300 to the vaporizer 100. That is, the valve 302 is opened, and the liquid raw material whose flow rate is controlled by the LMFC 303 is introduced into the liquid raw material supply unit 150 via the liquid raw material introduction port 151. The liquid raw material supplied to the liquid raw material supply unit 150 is monitored by the temperature sensor 119 whether or not the temperature is 100 ° C. or lower (for example, 80 to 100 ° C.). When the liquid raw material is discharged from the discharge port 152, it is atomized by the carrier gas, becomes a state of fine droplets (for example, a mist state), and is sprayed into the upper space 112a in the vaporization container 111. The vaporization container 111 is heated to a desired temperature (for example, 180 to 210 ° C.) through the metal block 116 by the vaporizer heater 113, and the sprayed droplets of the liquid raw material are collected on the surface of the vaporization container 111 or in the vaporization chamber. It is heated in 112 and evaporates to become a gas. The vaporized liquid raw material is sent out from the exhaust port 114 to the processing gas supply pipe 289a as a processing gas (vaporizing gas) together with the carrier gas.

The temperature of the vaporizer heater 113 is controlled so that poor vaporization does not occur based on the temperature data measured by the temperature sensor 115. If the processing gas supplied into the processing chamber 201 due to poor vaporization contains a liquid raw material in a droplet state, particles are generated during the reforming process, which leads to deterioration of the quality of the SiO film. be. Specifically, the temperature of the vaporization chamber 112 is vaporized so as to be kept above a predetermined temperature so that the droplets are not completely vaporized or reliquefied due to a decrease in the temperature of a part or all of the vaporization container 111. Controls the instrument heater 113.

Further, the valve 289b is opened, and the processing gas delivered from the vaporizer 100 is supplied into the processing chamber 201 via the processing gas supply pipe 289a, the valve 289b, the processing gas supply nozzle 501a, and the supply hole 501b. The processing gas introduced into the processing chamber 201 from the supply hole 501b is supplied to the wafer 200. _{The H 2} O ₂ gas contained in the processing gas oxidizes with the silicon-containing film on the surface of the wafer 200 as a reaction gas to modify the silicon-containing film into a SiO film.

Further, while supplying the processing gas into the processing container 203, the inside of the processing container 203 is exhausted by the vacuum pump 246. That is, the APC valve 255 is opened, and the exhaust gas exhausted from the processing container 203 via the gas exhaust pipe 231 is exhausted by the vacuum pump 246. Then, after a lapse of a predetermined time, the valve 289b is closed and the supply of the processing gas into the processing container 203 is stopped. Further, after a lapse of a predetermined time, the APC valve 255 is closed to stop the exhaust in the processing container 203.

In the present embodiment, hydrogen peroxide solution is used as the liquid raw material, but the liquid raw material is not limited to this, and for example, a liquid _{containing ozone (O 3} ), water, or the like can be used as the liquid raw material. However, in the case of vaporizing a liquid raw material containing a compound having a property of rapidly decomposing with increasing temperature, such as _{H 2} O ₂ used in the present embodiment, the use of the vaporizer 100 in the present embodiment is particularly suitable. be.

(Drying step (S40))
After the reforming step (S30) is completed, the wafer 200 is heated to a predetermined second temperature equal to or lower than the temperature processed in the prebaking step T30. The second temperature is set to a temperature higher than the above-mentioned first temperature and equal to or lower than the temperature of the above-mentioned prebaking step T30. After the temperature is raised, the temperature is maintained to dry the wafer 200 and the inside of the processing container 203.

(Temperature lowering / atmospheric pressure return step (S50))
After the drying step (S40) is completed, the APC valve 255 is opened and the inside of the processing container 203 is evacuated to remove particles and impurities remaining in the processing container 203. After vacuum exhaust, the APC valve 255 is closed to restore the pressure in the processing container 203 to atmospheric pressure. After the pressure in the processing container 203 reaches atmospheric pressure and a predetermined time elapses, the temperature is lowered to, for example, about the insertion temperature of the wafer 200.

(Board unloading process (S60))
After that, the processed wafer 200 is carried out from the lower end of the processing container 203 to the outside of the processing container 203 while being held by the boat 217 by the boat elevator. After that, the processed wafer 200 is taken out from the boat 217, and the substrate processing step according to the present embodiment is completed.

<Second Embodiment of the present invention>
Subsequently, the second embodiment of the present invention will be described with reference to FIG. In the following, detailed description of the same configurations and steps as those in the above-described embodiment will be omitted.

In the substrate processing apparatus of this embodiment, the vaporizer 400 is used instead of the vaporizer 100. The vaporizer 400 according to the present embodiment is provided with an atomizing heater 162 as a second heater for heating the liquid raw material supply unit 150 around the liquid raw material supply unit 150.

The vaporizer 400 is provided between the atomizing heater 162 and the liquid raw material supply unit 150 so as to conduct the heat released from the atomizing heater 162 to the quartz member of the liquid raw material supply unit 150 (second). Metal block) is inserted. That is, the metal block 163 is provided along the side surface of the liquid supply unit 150 so as to cover the periphery of the liquid raw material supply unit 150. The metal block 163 is heated by the atomizing heater 162 and is configured to conduct heat to the buffer chamber 154.

Further, a temperature sensor 119 composed of a thermocouple is mounted on the outer surface of the liquid raw material introduction pipe 158 in the buffer space 154, and the metal block 163 is an atomizing heater based on the temperature data measured by the temperature sensor 119. It is heated by 162.

The temperature control controller 106 individually controls the vaporizer heater 113, which is the first heater, and the atomize heater 162, which is the second heater. Specifically, the temperature control controller 106 is held at a predetermined temperature (for example, 90 ° C.) in which the temperature of the liquid raw material supply unit 150 is 80 ° C. or higher and 100 ° C. or lower based on the temperature data measured by the temperature sensor 119. The temperature of the atomizing heater 162 is controlled so as to be. Further, the temperature control controller 106 controls the temperature of the vaporizer heater 113 so that the temperature of the vaporizer container 111 is 180 ° C. or higher and 210 ° C. or lower based on the temperature data measured by the temperature sensor 115.

In the present embodiment, the heat insulating member 165, which will be described later, is provided to prevent the liquid raw material supply unit 150, the metal block 163, and the atomizing heater 162 from being interfered with by the heat emitted from the outer heater 113a. Therefore, the temperature of the liquid raw material supply unit 150 and the temperature of the vaporization container 111 can be easily controlled without causing thermal interference between the vaporizer heater 113 and the atomizing heater 162. That is, the vaporizer heater 113 can be controlled based on the temperature data measured by the temperature sensor 115, and the atomize heater 162 can be controlled based on the temperature data measured by the temperature sensor 119.

Further, in the present embodiment, since the atomizing heater 162 is controlled to maintain the temperature of the liquid raw material supply unit 150 at a predetermined temperature, the decomposition rate _{of H 2} O _{2 in the liquid raw material in the liquid raw material supply unit 150 is constant.} It can be managed so as to be. That is, since the concentration of H ₂ O ₂ in the liquid raw material supplied to the vaporization chamber 112 can be constantly controlled and managed on the basis of the concentration of H ₂ O ₂ in the gas generated in the vaporizer 400 to the theoretical value Will be easier.

Further, if the temperature of the liquid raw material supplied to the vaporization chamber 112 is too low, the time until vaporization becomes long, and vaporization failure may occur. In the present embodiment, by preheating the liquid raw material supply unit 150 at 80 ° C. or higher and 100 ° C. or lower, the vaporization chamber 112 is suppressed so that the decomposition _{of H 2} O _{2 in the liquid raw material supply unit 150 does not proceed rapidly.} It can promote vaporization within.

The vaporizer 400 is covered with an integrated heat insulating member 160, and a heat insulating member 165 is provided between the metal block 116 and the metal block 163 in addition to the heat insulating member 160. That is, the heat insulating member 165 is provided between the outer heater 113a constituting the first heater and the atomizing heater 162 constituting the second heater. Further, the heat insulating member 165 is provided between the ceiling wall 161 of the vaporization container 111 connected to the liquid raw material supply unit 150 and the upper surface of the metal block 116.

In this way, the heat insulating member 165 is provided below the liquid raw material supply unit 150, and the heat released from the vaporizer heater 113 via the metal block 116 is blocked from the metal block 163 and the liquid raw material supply unit 150. It is configured to. In other words, the liquid raw material supply unit 150 and the vaporization chamber 112 have a separate and independent structure, and the temperature interference between the liquid raw material supply unit 150 and the vaporization chamber 112 is reduced.

<Other Embodiments of the Present Invention>
Although the embodiments of the present invention have been specifically described above, the present invention is not limited to the above-described embodiments, and various modifications can be made without departing from the gist thereof.

In the above-described embodiment, an example of processing the wafer 200 on which the polysilazane film is formed has been shown, but the present invention is not limited to this. For example, the present invention can be similarly applied to the case of processing a wafer 200 on which a film containing a silicon element, a nitrogen element and a hydrogen element, particularly a film having a silazane bond (-Si-N-) is formed. For example, the above-mentioned vaporizer can also be used for treatment of a coating film using hexamethyldisilazane (HMDS), hexamethylcyclotrisilazane (HMCTS), polycarbosilazane, and polyorganosilazan.

Further, the above-mentioned vaporizer can also be used for the treatment of the plasma polymerized film of tetrasilylamine and ammonia. Further, the above-mentioned vaporizer is also used for processing a silicon-containing film formed by the CVD method, for example, a silicon-containing film formed by the CVD method using a silicon raw material such as monosilane gas or trisilylamine (TSA) gas. Can be used. As a method for forming the silicon-containing film by the CVD method, a fluid CVD method can be particularly used.

Further, in the above-described embodiment, the substrate processing apparatus including the vertical processing furnace has been described, but the present invention is not limited to this, and for example, a substrate processing apparatus having a single-wafer type, Hot Wall type, and Cold Wall type processing furnace, and processing The above-mentioned vaporizer may be applied to a substrate processing apparatus that excites a gas to process a wafer 200.

<Example>
Hereinafter, examples of the present invention will be described.

As the present embodiment, the above-mentioned vaporizer 400 shown in FIGS. 10 and 11 (A) is used, and as a comparative example, the vaporizer 500 shown in FIG. 11 (B) is used, and water (H ₂ O) as a liquid raw material is used. Was supplied to the liquid raw material supply unit 150 and vaporized. The vaporizer 500 does not have the heat insulating member 165 of the vaporizer 400, and the liquid raw material supply unit 150 and the vaporizer container 111 are not thermally separated and independent. The processing conditions were the same.

It was confirmed that the vaporizer 500 shown in FIG. 11B has the ability to vaporize a liquid raw material of up to 20 g / min when the liquid part temperature (temperature in the liquid raw material supply part 150) is 143 ° C. rice field. On the other hand, it was confirmed that the vaporizer 400 shown in FIG. 11A has the ability to vaporize a liquid raw material of 20 g / min at the maximum when the liquid part temperature is 89 ° C.

That is, in this embodiment, the temperature of the liquid part is maintained at 100 ° C. or lower by providing the heat insulating member 165 between the atomizing heater that heats the liquid raw material supply part 150 and the vaporizer heater 113 that heats the vaporization chamber 112. It was confirmed that even if the temperature of the liquid part is 100 ° C. or lower, the same amount of liquid raw material as when the temperature exceeds 100 ° C. can be vaporized.

10 Substrate processing device 100,400 Vaporizer 150 Liquid raw material gas supply section 108 Vaporization section 111 Vaporization container 112 Vaporization chamber 160,165 Insulation member 200 Wafer (board)

Claims (14)

The liquid raw material supply unit that supplies the liquid raw material and
A vaporization container constituting a vaporization chamber in which the liquid raw material supplied by the liquid raw material supply unit is vaporized inside.
The first heater that heats the vaporization container and
A heat insulating member provided so as to block the heat released from the first heater with respect to the liquid raw material supply unit, and
A second heater that heats the liquid raw material supply unit and
A control unit that individually controls the temperatures of the first heater and the second heater,
Vaporizer equipped with. The heat insulating member, carburetor of claim 1, wherein provided between the second heater and the first heater. The liquid raw material supply unit that supplies the liquid raw material and
A vaporization container constituting a vaporization chamber in which the liquid raw material supplied by the liquid raw material supply unit is vaporized inside.
The first heater that heats the vaporization container and
A heat insulating member provided so as to block the heat released from the first heater with respect to the liquid raw material supply unit is provided.
The vaporization container is
Cylindrical outer container and
A columnar inner container provided inside the outer container and
Have,
The outer wall of the inner container portion is provided with a predetermined gap between the outer wall surface and the inner side wall of the outer container portion, thereby forming a tubular gas flow path in which the liquid raw material is vaporized. Is configured as
Vaporizer width of the tubular gas flow path Ru der than 0.8mm or less 0.6 mm. The vaporizer according to any one of claims 1 to 3 , wherein the heat insulating member is configured such that the temperature of the liquid raw material supply unit is 100 ° C. or lower. Wherein, carburetor of claim 2 wherein the temperature of the liquid material supply section to control the temperature of the second heater so that the 80 ° C. or higher 100 ° C. or less. The liquid raw material supply unit includes any one of claims 1 to 5 including a discharge port for discharging the liquid raw material into the vaporization chamber and a liquid raw material supply pipe for introducing the liquid raw material to the discharge port. The vaporizer described. The liquid raw material supply unit is provided in the vicinity of the discharge port, and is configured to eject the carrier gas into the vaporization chamber, and the carrier gas supply for introducing the carrier gas to the carrier gas outlet. The vaporizer according to claim 6 , further comprising a tube. The liquid raw material supply unit that supplies the liquid raw material and
A vaporization container constituting a vaporization chamber in which the liquid raw material supplied by the liquid raw material supply unit is vaporized inside.
The first heater that heats the vaporization container and
A heat insulating member provided so as to block the heat released from the first heater with respect to the liquid raw material supply unit is provided.
The vaporizing container and the liquid material supply section is composed of quartz, vaporizer both that are formed integrally. The liquid raw material supply unit that supplies the liquid raw material and
A vaporization container constituting a vaporization chamber in which the liquid raw material supplied by the liquid raw material supply unit is vaporized inside.
The first heater that heats the vaporization container and
A heat insulating member provided so as to block the heat released from the first heater with respect to the liquid raw material supply unit is provided.
Between the first heater and the vaporization container, a first metal block which is heated by the first heater and provided so as to conduct heat to the vaporization container is provided.
The heat insulating member, the heat emitted from the first metal block to block to the liquid material supply section, vaporizer that has over at least a portion of a surface of the first metal block. The vaporization container has a tubular outer container portion, and the first metal block is a ceiling wall of the vaporization container to which the liquid raw material supply portion is connected from below so as to cover the outer surface of the outer container portion. The vaporizer according to claim 9, which is provided up to the same height position as, or from below to a position lower than the ceiling wall. A second heater for heating the liquid raw material supply unit is further provided.
A second metal block heated by the second heater and provided to conduct heat to the liquid raw material supply unit is provided between the second heater and the liquid raw material supply unit.
The vaporizer according to claim 9 or 10 , wherein the heat insulating member is provided between the first metal block and the second metal block. The vaporizer according to any one of claims 1 to 11 , wherein the liquid raw material contains hydrogen peroxide. A processing room for accommodating the substrate and
A liquid raw material supply unit that supplies a liquid raw material, a vaporization container that constitutes a vaporization chamber in which the liquid raw material supplied by the liquid raw material supply unit is vaporized internally, a first heater that heats the vaporization container, and the first heater. A heat insulating member provided so as to block the heat released from the 1 heater to the liquid raw material supply unit, a second heater for heating the liquid raw material supply unit, and the first heater and the second heater. A vaporizer equipped with a control unit that controls the temperature individually, and
A vaporization gas pipe that supplies the vaporized gas generated by the vaporizer to the processing chamber, and
Substrate processing device. The process of bringing the substrate into the processing chamber and
Supplying the liquid raw material The process of supplying the liquid raw material into the vaporization container constituting the vaporization chamber in which the liquid raw material supplied by the liquid raw material supply unit is vaporized inside, and
While the heat released from the first heater for heating the vaporization container is blocked from the liquid raw material supply unit by a heat insulating member, the vaporization container is heated by the first heater and the liquid raw material supply unit is heated. The step of heating the liquid raw material supply unit by the second heater
The process of vaporizing the liquid raw material supplied in the heated vaporization container to generate vaporized gas and supplying the vaporized gas to the processing chamber.
Ru with a,
A method for manufacturing a semiconductor device, in which the temperatures of the first heater and the second heater are individually controlled.

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