JP6900540B1 - Work separation device and work separation method - Google Patents

Work separation device and work separation method Download PDF

Info

Publication number
JP6900540B1
JP6900540B1 JP2020069872A JP2020069872A JP6900540B1 JP 6900540 B1 JP6900540 B1 JP 6900540B1 JP 2020069872 A JP2020069872 A JP 2020069872A JP 2020069872 A JP2020069872 A JP 2020069872A JP 6900540 B1 JP6900540 B1 JP 6900540B1
Authority
JP
Japan
Prior art keywords
work
adhesive layer
support
peeling
outer edge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2020069872A
Other languages
Japanese (ja)
Other versions
JP2021166274A (en
Inventor
義和 大谷
義和 大谷
恭平 富岡
恭平 富岡
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shin Etsu Engineering Co Ltd
Original Assignee
Shin Etsu Engineering Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shin Etsu Engineering Co Ltd filed Critical Shin Etsu Engineering Co Ltd
Priority to JP2020069872A priority Critical patent/JP6900540B1/en
Priority to PCT/JP2021/011641 priority patent/WO2021205855A1/en
Priority to KR1020227006215A priority patent/KR102433950B1/en
Priority to CN202180004814.0A priority patent/CN114175230B/en
Priority to TW110112111A priority patent/TWI759164B/en
Application granted granted Critical
Publication of JP6900540B1 publication Critical patent/JP6900540B1/en
Publication of JP2021166274A publication Critical patent/JP2021166274A/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H01L2221/6839—Separation by peeling using peeling wedge or knife or bar

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Adhesives Or Adhesive Processes (AREA)

Abstract

【課題】変質後の仮接着層に未剥離部位が存在しても、ワークと支持体をスムーズに剥離するワーク分離装置及びワーク分離方法を提供する。【解決手段】ワーク分離装置Ａにおいて、ワーク１を着脱自在に保持する保持部材３２と、保持部材で保持したワーク及び支持体２の間に配置された仮接着層３の外縁３ｃと対向する剥離部材３２と、剥離部材を仮接着層の前記外縁に向けて移動する駆動部３３と、ワーク又は支持体のいずれか一方を他方に対して厚み方向へ引き離す隔離部材３４と、駆動部及び隔離部材を作動制御する制御部３５と、を備える。剥離部材は、仮接着層の外縁の少なくとも周方向一部に突き当たる破壊刃３２ａを有し、駆動部の作動により、剥離部材の破壊刃が仮接着層の外縁に生じる未剥離部位３ｄを壊すようにされ、隔離部材の作動により、破壊刃で壊した未剥離部位からワークと支持体が引き剥がされる。【選択図】図３PROBLEM TO BE SOLVED: To provide a work separating device and a work separating method for smoothly peeling a work and a support even if an unpeeled portion exists in the temporary adhesive layer after alteration. SOLUTION: In a work separating device A, a holding member 32 for detachably holding a work 1 and an outer edge 3c of a temporary adhesive layer 3 arranged between the work held by the holding member and a support 2 are peeled off. The member 32, the drive unit 33 that moves the release member toward the outer edge of the temporary adhesive layer, the isolation member 34 that separates either the work or the support from the other in the thickness direction, and the drive unit and the isolation member. A control unit 35 for controlling the operation of the above. The peeling member has a breaking blade 32a that abuts at least a part of the outer edge of the temporary adhesive layer in the circumferential direction, and the breaking blade of the peeling member breaks the unpeeled portion 3d generated on the outer edge of the temporary adhesive layer by the operation of the drive unit. The work and the support are peeled off from the unpeeled portion broken by the breaking blade by the operation of the separating member. [Selection diagram] Fig. 3

Description

本発明は、厚さが極めて薄い半導体基板や半導体ウエハの処理工程などのような、製品となるワークの製造過程において、支持体に仮止め保持されたワークを支持体から剥離するために用いられるワーク分離装置、及び、ワーク分離装置を用いたワーク分離方法に関する。 The present invention is used to peel off a work temporarily fixed and held by a support from the support in a manufacturing process of a work to be a product, such as a processing process of a semiconductor substrate or a semiconductor wafer having an extremely thin thickness. The present invention relates to a work separating device and a work separating method using the work separating device.

従来、この種のワーク分離装置及びワーク分離方法として、半導体基板（薄型ウエハ）をシリコン、ガラス等の支持体に仮接着層を介して接合することにより、裏面研削、ＴＳＶや裏面電極形成の工程に十分耐えうるシステムが提案されている（例えば、特許文献１参照）。仮接着層は、光レーザーの照射で接着力を変化させて分離可能にする光レーザー剥離方式の分離層を含んでいる。
仮接着層の積層方法は、仮接着層の材料として接着力がある熱硬化性樹脂を溶剤に溶解し、スピンコート法等を用いて半導体基板（回路付ウエハ）や支持体の表面に仮接着層が形成される。
仮接着層を介した回路付ウエハと支持体の貼り合わせ方法は、高温領域の減圧下で回路付ウエハと支持体が仮接着層を介して貼り合わされて均一に圧着することにより、回路付ウエハが仮接着材層を介して支持体に接合される。
回路付ウエハと支持体の分離方法において光レーザー剥離方式による支持体の分離は、支持体側からレーザーを照射して、仮接着層や分離層を変質させることにより、支持体と分離層の接着力等が低下して、回路付ウエハにダメージを与えることなく支持体が分離される。 Conventionally, as this type of work separation device and work separation method, a process of backside polishing, TSV and backside electrode formation by joining a semiconductor substrate (thin wafer) to a support such as silicon or glass via a temporary adhesive layer. A system that can sufficiently withstand the above has been proposed (see, for example, Patent Document 1). The temporary adhesive layer includes an optical laser peeling type separation layer that changes the adhesive force by irradiation with an optical laser to enable separation.
In the method of laminating the temporary adhesive layer, a thermosetting resin having adhesive strength as a material of the temporary adhesive layer is dissolved in a solvent and temporarily adhered to the surface of a semiconductor substrate (wafer with a circuit) or a support by using a spin coating method or the like. Layers are formed.
The method of bonding the circuit wafer and the support via the temporary adhesive layer is that the circuit wafer and the support are bonded via the temporary adhesive layer under reduced pressure in a high temperature region and uniformly pressure-bonded to obtain the circuit wafer. Is joined to the support via a temporary adhesive layer.
In the method of separating the wafer with a circuit and the support, the support is separated by the optical laser peeling method by irradiating a laser from the support side to alter the temporary adhesive layer and the separation layer, so that the adhesive force between the support and the separation layer is changed. Etc. are reduced, and the support is separated without damaging the wafer with circuit.

特開２０１７−０９８４７４号公報JP-A-2017-098474

ところで、半導体基板や薄型ウエハなどのワークと支持体は、接着力がある熱硬化性樹脂の溶解により仮接着層をワークや支持体に積層した後、ワークと支持体の間に仮接着層を挟み込んで圧着（加圧）している。このため、仮接着層の熱硬化性樹脂がワークや支持体の外縁から食み出るおそれがある。
この場合には、レーザーの照射で仮接着層や分離層を変質しても、ワークや支持体の外縁から食み出した部位にはレーザ光が照射されず、レーザ光で変質しない未剥離な部位を生じてしまう。
また、ワークだけでなく支持体の角部（エッジ部）は、一般的にケガ防止や破損防止などの目的で面取り加工される。このため、照射されたレーザ光が支持体の面取りで散乱して、面取りと近い仮接着層や分離層の外縁に、レーザ光で変質しない未剥離部位を生じてしまう。
その他にもワークと支持体の間に異物が混入した場合や、支持体の表面に異物が付着した場合など、レーザーの照射による仮接着層や分離層の変質のみでは部分的な未剥離部位が生じて、ワークと支持体をスムーズに剥離できないことがある。
これにより、前述の未剥離部位が生じた際に、ワークと支持体を大きな力で無理に剥離すると、ワークや支持体に部分的な破損や割れ目，裂け目を生じることがあり、その後の生産過程において異常を起こすという問題があった。
このような状況下で、レーザ光による変質後の仮接着層に未剥離部位が存在しても、ワークと支持体をスムーズに剥離する技術が要望されている。 By the way, for a work such as a semiconductor substrate or a thin wafer and a support, a temporary adhesive layer is laminated on the work or the support by melting a thermosetting resin having adhesive strength, and then a temporary adhesive layer is formed between the work and the support. It is sandwiched and crimped (pressurized). Therefore, the thermosetting resin of the temporary adhesive layer may squeeze out from the outer edge of the work or the support.
In this case, even if the temporary adhesive layer or the separation layer is altered by laser irradiation, the portion protruding from the outer edge of the work or support is not irradiated with the laser beam and is not altered by the laser beam. It creates a part.
Further, not only the work but also the corners (edges) of the support are generally chamfered for the purpose of preventing injury or damage. Therefore, the irradiated laser beam is scattered by the chamfering of the support, and an unpeeled portion that is not deteriorated by the laser beam is generated on the outer edge of the temporary adhesive layer or the separation layer close to the chamfering.
In addition, when foreign matter is mixed between the work and the support, or when foreign matter adheres to the surface of the support, there are some unpeeled parts only by the alteration of the temporary adhesive layer and the separation layer by laser irradiation. As a result, the work and the support may not be separated smoothly.
As a result, if the work and the support are forcibly peeled off with a large force when the above-mentioned unpeeled portion is generated, the work and the support may be partially damaged, cracked, or split, and the subsequent production process. There was a problem of causing an abnormality in.
Under such circumstances, there is a demand for a technique for smoothly peeling the work and the support even if there is an unpeeled portion in the temporary adhesive layer after being altered by the laser beam.

このような課題を解決するために本発明に係るワーク分離装置は、回路基板を含むワークと、前記ワークを平坦な状態に保持する支持体とが、仮接着層を介して接合されてなる積層体に対し、変性剥離装置により前記仮接着層が変質して前記ワークから前記支持体を剥離するワーク分離装置であって、前記ワークを着脱自在に保持する保持部材と、前記保持部材で保持した前記ワーク及び前記支持体の間に配置された前記仮接着層の外縁と対向する剥離部材と、前記剥離部材を前記仮接着層の前記外縁に向けて移動する駆動部と、前記ワーク又は前記支持体のいずれか一方を他方に対して厚み方向へ引き離す隔離部材と、前記駆動部及び前記隔離部材を作動制御する制御部と、を備え、前記仮接着層は、前記仮接着層の前記外縁に生じる前記変性剥離装置で変質しない未剥離部位を有し、前記剥離部材は、前記仮接着層の前記外縁の少なくとも周方向一部に突き当たる破壊刃を有し、前記制御部は、前記駆動部の作動により、前記剥離部材の前記破壊刃が前記未剥離部位を壊すように制御され、前記隔離部材の作動により、前記破壊刃で壊した前記未剥離部位から前記ワークと前記支持体が引き剥がされるように制御することを特徴とする。
また、このような課題を解決するために本発明に係るワーク分離方法は、回路基板を含むワークと、前記ワークを平坦な状態に保持する支持体とが、仮接着層を介して接合されてなる積層体に対し、変性剥離装置により前記仮接着層が変質して前記ワークから前記支持体を剥離するワーク分離方法であって、保持部材で保持した前記ワーク及び前記支持体の間に配置された前記仮接着層の外縁に向けて剥離部材を移動する外縁剥離工程と、前記ワーク又は前記支持体のいずれか一方を他方に対して隔離部材で厚み方向へ引き離す隔離工程と、を含み、前記仮接着層は、前記仮接着層の前記外縁に生じる前記変性剥離装置で変質しない未剥離部位を有し、前記外縁剥離工程では、前記剥離部材の破壊刃が、前記仮接着層の前記外縁の少なくとも周方向一部に突き当たって前記未剥離部位を壊し、前記隔離工程では、前記隔離部材の作動により、前記破壊刃で壊した前記未剥離部位から前記ワークと前記支持体を引き剥がすことを特徴とする。 Such problems workpiece separator apparatus according to the present invention in order to solve comprises a workpiece including a circuit board, a support for holding the workpiece in a flat condition, formed by bonding through a temporary adhesive layer laminated A work separating device for peeling the support from the work by deteriorating the temporary adhesive layer with respect to the body by the modified peeling device , and holding the work with a holding member that holds the work detachably and the holding member. A peeling member arranged between the work and the support that faces the outer edge of the temporary adhesive layer, a driving unit that moves the peel member toward the outer edge of the temporary adhesive layer, and the work or the support. The temporary adhesive layer includes an isolation member that separates one of the bodies from the other in the thickness direction, and a control unit that controls the operation of the drive unit and the isolation member, and the temporary adhesive layer is attached to the outer edge of the temporary adhesive layer. The peeling member has an unpeeled portion that is not deteriorated by the modified peeling device, the peeling member has a breaking blade that abuts at least a part of the outer edge of the temporary adhesive layer in the circumferential direction, and the control unit is of the driving unit. the operation, wherein the breaking blade peeling member is controlled so that breaking the previous SL unpeeled portion, the actuation of the isolation member, said breaking blade in said workpiece between said support peeled from unpeeled site broke It is characterized in that it is controlled so as to be used.
Further, the work separation method according to the present invention in order to solve such a problem, a workpiece including a circuit board, a support for holding the workpiece in a flat condition, are joined via a temporary adhesive layer to become laminate, the temporary adhesion layer is altered by denaturing peeling device comprising a work separation method of removing the support from the workpiece, it is arranged between the workpiece and the support held by the holding member wherein the outer edge peeling step of moving the stripping member towards the outer edge of the temporary adhesive layer, and a isolation step of separating the thickness direction isolating member one of said workpiece or said support relative to the other, the The temporary adhesive layer has an unpeeled portion that is generated on the outer edge of the temporary adhesive layer and is not deteriorated by the modified peeling device. In the outer edge peeling step, the breaking blade of the peeling member is formed on the outer edge of the temporary adhesive layer. breaking the unpeeled portion abuts at least in the circumferential direction a portion, the at isolation step, wherein by actuation of the isolation member, peeled from the unpeeled portion broke by the breaking blade pulls the support and the workpiece And.

本発明の実施形態（第一実施形態）に係るワーク分離装置及びワーク分離方法における貼り合わせ過程を示す説明図であり、（ａ）が貼り合わせ前の縦断正面図、（ｂ）が貼り合わせ時の縦断正面図である。（ｃ）は本発明の実施形態（第二実施形態）に係るワーク分離装置及びワーク分離方法における貼り合わせ時を示す縦断正面図である。It is explanatory drawing which shows the bonding process in the work separating apparatus and work separating method which concerns on embodiment (first embodiment) of this invention, (a) is the vertical sectional front view before bonding, (b) is the time of bonding. It is a vertical sectional front view of. (C) is a vertical sectional front view showing the time of bonding in the work separating device and the work separating method according to the embodiment (second embodiment) of the present invention. 本発明の実施形態（第一実施形態及び第二実施形態）に係るワーク分離装置及びワーク分離方法における分離過程（仮接着層の変性工程）を示す縦断正面図である。It is a longitudinal front view which shows the separation process (modification process of a temporary adhesive layer) in the work separation apparatus and work separation method which concerns on embodiment (the first embodiment and the second embodiment) of this invention. 本発明の実施形態（第一実施形態）に係るワーク分離装置及びワーク分離方法における分離過程（仮接着層の外縁剥離工程）を示す説明図であり、（ａ）が破壊剥離時の正面図、（ｂ）が同平面図である。It is explanatory drawing which shows the separation process (outer edge peeling step of a temporary adhesive layer) in the work separation apparatus and work separation method which concerns on embodiment (first embodiment) of this invention, (a) is the front view at the time of fracture peeling, (B) is the same plan view. 分離過程（仮接着層の外縁剥離工程）を示す縦断正面図である。It is a longitudinal front view which shows the separation process (the outer edge peeling process of a temporary adhesive layer). 分離過程（仮接着層の隔離工程）を示す説明図であり、（ａ）が隔離前の縦断正面図、（ｂ）が隔離後の縦断正面図である。It is explanatory drawing which shows the separation process (separation process of a temporary adhesive layer), (a) is a vertical sectional front view before isolation, (b) is a vertical sectional front view after isolation. 本発明の実施形態（第二実施形態）に係るワーク分離装置及びワーク分離方法における分離過程（仮接着層の外縁剥離工程）を示す縦断正面図である。It is a longitudinal front view which shows the separation process (the outer edge peeling process of a temporary adhesive layer) in the work separation apparatus and work separation method which concerns on embodiment (second embodiment) of this invention.

以下、本発明の実施形態を図面に基づいて詳細に説明する。
本発明の実施形態に係るワーク分離装置Ａ及びワーク分離方法は、図１〜図６に示すように、回路基板（図示しない）を含むワーク１と、ワーク１を保持する支持体２とが、仮接着層３を介して接合されてなる積層体Ｓに対し、仮接着層３の変質（変性）などによりワーク１と支持体２を剥離させる装置と方法である。厚さが極めて薄い半導体ウエハ（以下「極薄ウエハ」という）の処理工程や、ＷＬＰ（wafer level packaging）やＰＬＰ（panel level packaging）のような半導体パッケージなどを製造することのために用いられる。
詳しく説明すると、本発明の実施形態に係るワーク分離装置Ａは、ワーク１と支持体２が仮接着層３を挟んで接合される貼り合わせ装置１０と、仮接着層３の変質によりワーク１と支持体２を剥離可能にする変性剥離装置２０と、仮接着層３の外縁３ｃの未剥離な部位を壊して引き剥がす破壊剥離装置３０と、を具備している。
なお、図１〜図６に示されるように、ワーク１や支持体２や積層体Ｓは通常、その表面や裏面が上下方向へ向くように載置される。ワーク１や支持体２や積層体Ｓの厚み方向を以下「Ｚ方向」という。厚み方向（Ｚ方向）と交差する二方向を以下「ＸＹ方向」という。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings.
In the work separating device A and the work separating method according to the embodiment of the present invention, as shown in FIGS. 1 to 6, a work 1 including a circuit board (not shown) and a support 2 holding the work 1 are provided. This is an apparatus and method for peeling the work 1 and the support 2 from the laminated body S formed by being joined via the temporary adhesive layer 3 by deteriorating (modifying) the temporary adhesive layer 3. It is used for processing processes of semiconductor wafers with extremely thin thickness (hereinafter referred to as "ultra-thin wafers") and for manufacturing semiconductor packages such as WLP (wafer level packaging) and PLP (panel level packaging).
More specifically, the work separating device A according to the embodiment of the present invention includes a bonding device 10 in which the work 1 and the support 2 are joined with the temporary adhesive layer 3 sandwiched between them, and the work 1 due to deterioration of the temporary adhesive layer 3. A modified peeling device 20 that enables peeling of the support 2 and a destructive peeling device 30 that breaks and peels off an unpeeled portion of the outer edge 3c of the temporary adhesive layer 3 are provided.
As shown in FIGS. 1 to 6, the work 1, the support 2, and the laminated body S are usually placed so that their front surfaces and back surfaces face in the vertical direction. The thickness direction of the work 1, the support 2, and the laminated body S is hereinafter referred to as "Z direction". The two directions that intersect the thickness direction (Z direction) are hereinafter referred to as "XY directions".

ワーク１は、回路形成処理や薄化処理などの半導体プロセスが供された回路基板を含むとともに搬送される円形のウエハや矩形（長方形及び正方形を含む角が直角の四辺形のパネル形状）の基板などからなるデバイス基板である。ワーク１は、シリコンなどの材料で薄板状に形成され、その表裏いずれか一方に加工面１ａを有する。
ワーク１の加工面１ａは、後述する貼り合わせ装置１０により支持体２が仮接着層３を介して接合された状態で、回路形成処理や薄化処理などの加工が施される。この加工の終了後には、後述する変性剥離装置２０により仮接着層３を変質させてワーク１から支持体２が剥離可能になる。
ワーク１の具体例としては、厚みが１５〜３，０００μｍに薄化されたウエハや基板、厚みを数十μｍ程度にした極薄ウエハ、更にはＷＬＰやＰＬＰなどのパッケージされたチップ基板などが用いられる。図示例では、ワーク１が円形の極薄ウエハである場合を示している。
さらにワーク１の加工面１ａや加工不要な非加工面１ｂと外側端面１ｃとで形成される角部は、一般的に面取り加工される。面取り加工とは、作業者の接触時におけるケガ防止と、物との接触時における破損防止などを目的とするものである。面取り加工としては、ワーク１の加工面１ａ及び非加工面１ｂと外側端面１ｃとの間に形成されるエッジ部を削り落すことにより、面取り１ｄが全周に亘って形成される。図示例では、面取り１ｄをＲ面取りしている。また図示例以外に図示しないがＣ面取りに変更することも可能である。 The work 1 includes a circuit board subjected to a semiconductor process such as a circuit forming process and a thinning process, and is a circular wafer or a rectangular (a quadrilateral panel shape having a right-angled angle including a rectangle and a square) substrate to be conveyed. It is a device board consisting of such as. The work 1 is formed of a material such as silicon into a thin plate shape, and has a processed surface 1a on either the front or the back surface thereof.
The processed surface 1a of the work 1 is subjected to processing such as circuit formation processing and thinning processing in a state where the support 2 is joined via the temporary adhesive layer 3 by the bonding device 10 described later. After the completion of this processing, the temporary adhesive layer 3 is altered by the modification peeling device 20 described later, and the support 2 can be peeled from the work 1.
Specific examples of the work 1 include wafers and substrates thinned to a thickness of 15 to 3,000 μm, ultrathin wafers having a thickness of several tens of μm, and packaged chip substrates such as WLP and PLP. Used. In the illustrated example, the case where the work 1 is a circular ultra-thin wafer is shown.
Further, the corner portion formed by the machined surface 1a of the work 1, the non-machined surface 1b that does not require processing, and the outer end surface 1c is generally chamfered. The chamfering process is intended to prevent injuries when the operator comes into contact with the worker and to prevent damage when the worker comes into contact with the object. In the chamfering process, the chamfered 1d is formed over the entire circumference by scraping off the edge portion formed between the processed surface 1a and the non-processed surface 1b of the work 1 and the outer end surface 1c. In the illustrated example, the chamfer 1d is R-chamfered. In addition to the illustrated example, it is also possible to change to C chamfer, although not shown.

支持体２は、ワーク１の薄化工程や各種処理工程や搬送工程などにおいてワーク１を平坦な状態に保持することにより、ワーク１が必要な強度を有してワーク１の破損や変形などが防止されるようにしたキャリア基板やサポート基板などと呼ばれるものである。支持体２は、光が透過するガラスや合成樹脂などの透明又は半透明な剛性材料で平板状に形成することが好ましい。
支持体２の具体例としては、厚みが例えば３００〜３，０００μｍのガラス板やセラミック板やアクリル系樹脂製などの円形板又は矩形板を用いている。図示例では、支持体２が円形のガラス板である。
さらに支持体２の表面２ａや裏面２ｂと外側端面２ｃとで形成される角部は、一般的に面取り加工される。面取り加工としては、支持体２の表面２ａ及び裏面２ｂと外側端面２１ｃとの間に形成されるエッジ部を削り落すことにより、面取り２ｄが全周に亘って形成される。図示例では、面取り２ｄをＲ面取りしている。また図示しないがＣ面取りに変更することも可能である。 By holding the work 1 in a flat state in the work 1 thinning process, various processing processes, transfer processes, etc., the support 2 has the required strength to prevent the work 1 from being damaged or deformed. It is called a carrier board or a support board that is prevented. The support 2 is preferably formed in a flat plate shape with a transparent or translucent rigid material such as glass or synthetic resin through which light is transmitted.
As a specific example of the support 2, a glass plate having a thickness of, for example, 300 to 3,000 μm, a ceramic plate, a circular plate made of an acrylic resin, or a rectangular plate is used. In the illustrated example, the support 2 is a circular glass plate.
Further, the corners formed by the front surface 2a and the back surface 2b of the support 2 and the outer end surface 2c are generally chamfered. In the chamfering process, the chamfering 2d is formed over the entire circumference by scraping off the edge portion formed between the front surface 2a and the back surface 2b of the support 2 and the outer end surface 21c. In the illustrated example, the chamfer 2d is R-chamfered. Although not shown, it is possible to change to C chamfer.

仮接着層３は、ワーク１と支持体２との間に挟み込むように配置され、接着性を有し且つその接着力が制御可能に変質（変性）する材料で構成される。仮接着層３の接着力を制御する方法としては、光の吸収などにより低下するように変質（変性）可能な材料を用い、接着性を有する材料からなる接着層部３ａと、光の吸収などで剥離又は破壊するように変質（変性）可能な材料からなる分離層部３ｂを重ね合わせた複数層構造に構成することが好ましい。さらに仮接着層３は、ワーク１と支持体２の剥離後において、容易に洗浄除去できる材料で構成することが好ましい。
仮接着層３の具体例として図１〜図６に示される場合には、接着剤からなる接着層部３ａと、透明や半透明の支持体２を介して照射されたレーザ光Ｌの吸収により、僅かな外力で剥離又は破壊し得るように変質する分離層部３ｂと、が積層された二層構造を用いている。図示例では、仮接着層３の接着層部３ａや分離層部３ｂが、ワーク１や支持体２と同様に円形の薄板状に形成されている。
分離層部３ｂは、支持体２の表面２ａに対し、厚みが約０．１μｍ〜１μｍ程度、好ましくは約０．５μｍ程度となるように積層される。
接着層部３ａは、分離層部３ｂの上面又はワーク１の加工不要な非加工面１ｂに沿って、その厚みが約１μｍ以上、好ましくは約２μｍ程度となるように積層され、分離層部３ｂとワーク１の非加工面１ｂとを接着層部３ａで接着している。
また、仮接着層３の他の例として図示しないが、接着機能と、光の吸収などで接着力が制御可能な剥離機能とを併せ持つ材料からなる単層構造に変更することも可能である。 The temporary adhesive layer 3 is arranged so as to be sandwiched between the work 1 and the support 2, and is composed of a material that has adhesiveness and whose adhesive force is controllably altered (modified). As a method of controlling the adhesive force of the temporary adhesive layer 3, a material that can be altered (modified) so as to decrease due to light absorption or the like is used, and an adhesive layer portion 3a made of an adhesive material and light absorption or the like are used. It is preferable to form a multi-layer structure in which the separation layer portions 3b made of a material that can be denatured (modified) so as to be peeled off or broken in the above layers are overlapped. Further, the temporary adhesive layer 3 is preferably made of a material that can be easily washed and removed after the work 1 and the support 2 are peeled off.
In the case shown in FIGS. 1 to 6 as a specific example of the temporary adhesive layer 3, by absorption of the laser beam L irradiated through the adhesive layer portion 3a made of an adhesive and the transparent or translucent support 2. A two-layer structure is used in which a separation layer portion 3b that is altered so that it can be peeled off or broken by a slight external force is laminated. In the illustrated example, the adhesive layer portion 3a and the separation layer portion 3b of the temporary adhesive layer 3 are formed in a circular thin plate shape like the work 1 and the support 2.
The separation layer portion 3b is laminated on the surface 2a of the support 2 so that the thickness is about 0.1 μm to 1 μm, preferably about 0.5 μm.
The adhesive layer portion 3a is laminated along the upper surface of the separation layer portion 3b or the non-processed surface 1b of the work 1 so that the thickness thereof is about 1 μm or more, preferably about 2 μm, and the separation layer portion 3b is formed. And the unprocessed surface 1b of the work 1 are bonded by the adhesive layer portion 3a.
Further, although not shown as another example of the temporary adhesive layer 3, it is possible to change to a single layer structure made of a material having both an adhesive function and a peeling function whose adhesive force can be controlled by absorbing light or the like.

貼り合わせ装置１０は、ワーク１と支持体２を厚み方向（Ｚ方向）へ相対的に接近移動させて、両者間に仮接着層３（接着層部３ａ及び分離層部３ｂ）が挟まれるように接合させる貼り合わせ機である。
貼り合わせ装置１０の具体例として図１に示される場合には、ワーク１を着脱自在に保持するように設けられる第一保持部材１１と、支持体２を着脱自在に保持するように設けられる第二保持部材１２と、第一保持部材１１や第二保持部材１２を相対的に接近移動させるように設けられる接合用駆動部１３と、接合用駆動部１３を作動制御するように設けられる接合用制御部１４と、を主要な構成要素として備えている。少なくとも第一保持部材１１及び第二保持部材１２は、減圧可能なチャンバー（図示しない）に配置され、ワーク１や支持体２を加熱しながら減圧下で相対的に接近させることが好ましい。
接合用駆動部１３は、アクチュエーターなどから構成され、接合用制御部１４により、図１（ａ）に示される貼り合わせ前の状態で、上側の第一保持部材１１と下側の第二保持部材１２を相対的に隔離移動させている。このため、第一保持部材１１に対するワーク１の搬入及び受け渡しが可能になるとともに、第二保持部材１２に対する支持体２の搬入及び受け渡しが可能になる。
その後、図１（ｂ）や図１（ｃ）に示されるワーク貼り合わせ時には、第一保持部材１１に保持されたワーク１と、第二保持部材１２に保持された支持体２を相対的に接近移動させる。これにより、支持体２の表面２ａに積層された分離層部３ｂと、分離層部３ｂの上面又はワーク１の非加工面１ｂに積層された接着層部３ａは、互いに重ね合わされ、必要に応じて所定圧力で加圧される。その結果としてワーク１と支持体２は、仮接着層３の接着層部３ａ及び分離層部３ｂを挟んで接合され、一体化して積層体Ｓとなる。 The bonding device 10 moves the work 1 and the support 2 relatively close to each other in the thickness direction (Z direction) so that the temporary adhesive layer 3 (adhesive layer portion 3a and separation layer portion 3b) is sandwiched between them. It is a bonding machine that joins to.
In the case shown in FIG. 1 as a specific example of the bonding device 10, the first holding member 11 provided so as to hold the work 1 detachably and the support 2 provided to hold the support 2 detachably. (Ii) For joining, the holding member 12, the joining drive unit 13 provided so as to move the first holding member 11 and the second holding member 12 relatively close to each other, and the joining drive unit 13 provided to control the operation of the joining drive unit 13. A control unit 14 is provided as a main component. It is preferable that at least the first holding member 11 and the second holding member 12 are arranged in a chamber (not shown) capable of depressurizing, and the work 1 and the support 2 are relatively close to each other under reduced pressure while being heated.
The joining drive unit 13 is composed of an actuator or the like, and is formed by the joining control unit 14 in the state before bonding shown in FIG. 1A, with the upper first holding member 11 and the lower second holding member 11. 12 is relatively isolated and moved. Therefore, the work 1 can be carried in and delivered to the first holding member 11, and the support 2 can be carried in and delivered to the second holding member 12.
After that, at the time of laminating the workpieces shown in FIGS. 1 (b) and 1 (c), the workpiece 1 held by the first holding member 11 and the support 2 held by the second holding member 12 are relatively relative to each other. Move closer. As a result, the separation layer portion 3b laminated on the surface 2a of the support 2 and the adhesive layer portion 3a laminated on the upper surface of the separation layer portion 3b or the non-processed surface 1b of the work 1 are overlapped with each other, if necessary. Is pressurized at a predetermined pressure. As a result, the work 1 and the support 2 are joined with the adhesive layer portion 3a and the separation layer portion 3b of the temporary adhesive layer 3 sandwiched between them, and are integrated to form a laminated body S.

変性剥離装置２０は、レーザ光Ｌの照射や所定波長の光の面照射などにより仮接着層３（接着層部３ａや分離層部３ｂ）を接着力が低下するように変質（変性）させて、ワーク１と支持体２を剥離可能にするための装置である。
変性剥離装置２０の具体例として図２に示される場合には、支持体２を通過したレーザ光Ｌの照射により、仮接着層３の分離層部３ｂを僅かな外力で剥離し得るように変質させている。
詳しく説明すると、変性剥離装置２０は、積層体Ｓのワーク１を着脱自在に保持するように設けられる変性剥離用保持部材２１と、支持体２を透して仮接着層３（分離層部３ｂ）に向けレーザ光Ｌを照射するように設けられるレーザ照射部２２と、を主要な構成要素として備えている。さらに変性剥離装置２０は、支持体２及び仮接着層３（分離層部３ｂ）に対するレーザ照射部２２からのレーザ照射位置Ｐを相対的に移動させるように設けられる変性剥離用駆動部２３と、レーザ照射部２２及び変性剥離用駆動部２３などを作動制御するように設けられる変性剥離用制御部２４と、が備えられる。
変性剥離用保持部材２１は、金属などの剛体で歪み変形しない厚さで、積層体Ｓの外形寸法よりも大きい円形又は矩形の定盤などで構成され、積層体Ｓと厚み方向（Ｚ方向）へ対向する保持面には、ワーク１の保持チャック２１ａが設けられる。保持チャック２１ａの具体例としてワーク１の厚みが極薄ウエハなどのように数十μｍ程度の場合には、ダイシングテープなどのようなテープ状の粘着シートが用いられ、ワーク１の非加工面１ｂの全体に粘着シートを貼り付けてサポートすることが好ましい。更に粘着シートの外周部には、ダイシングフレームなどのようなリング状の保持フレーム（図示しない）を取り付けて補強することにより、搬送可能にすることも可能である。
レーザ照射部２２は、レーザ発振器などのレーザ光源（図示しない）からレーザ光Ｌを積層体Ｓに対して厚み方向（Ｚ方向）へ向けて導く光学系の一部として設けられる。レーザ照射部２２の具体例として図示例の場合には、レーザスキャナが用いられ、レーザ光Ｌを積層体Ｓに沿って走査（掃引）させている。
変性剥離用駆動部２３は、変性剥離用保持部材２１又はレーザ照射部２２のいずれか一方か若しくは変性剥離用保持部材２１及びレーザ照射部２２の両方を移動させる光軸相対移動機構である。変性剥離用駆動部２３は、変性剥離用制御部２４により、レーザ照射部２２から照射されたレーザ光Ｌを、変性剥離用保持部材２１に保持した積層体Ｓの分離層部３ｂに対して、少なくともレーザ照射部２２からのレーザ光Ｌの照射方向（Ｚ方向）と交差する二方向（ＸＹ方向）へ相対的に移動させるように構成される。その結果として、分離層部３ｂにおいてレーザ光Ｌの照射箇所は、僅かな外力で剥離し得るように変質する。 The modification peeling device 20 alters (modifies) the temporary adhesive layer 3 (adhesive layer portion 3a and separation layer portion 3b) so that the adhesive force is reduced by irradiation with laser light L or surface irradiation with light having a predetermined wavelength. , A device for making the work 1 and the support 2 peelable.
In the case shown in FIG. 2 as a specific example of the modification peeling device 20, the separation layer portion 3b of the temporary adhesive layer 3 can be peeled by a slight external force by irradiation with the laser beam L passing through the support 2. I'm letting you.
More specifically, the modified peeling device 20 passes through the modified peeling holding member 21 provided so as to detachably hold the work 1 of the laminated body S and the support 2, and the temporary adhesive layer 3 (separation layer portion 3b). ), A laser irradiation unit 22 provided so as to irradiate the laser beam L toward) is provided as a main component. Further, the modification peeling device 20 includes a modification peeling drive unit 23 provided so as to relatively move the laser irradiation position P from the laser irradiation unit 22 with respect to the support 2 and the temporary adhesive layer 3 (separation layer portion 3b). A modified peeling control unit 24 provided to control the operation of the laser irradiation unit 22, the modified peeling drive unit 23, and the like is provided.
The modified peeling holding member 21 is made of a circular or rectangular surface plate having a thickness that is not distorted and deformed by a rigid body such as metal and is larger than the external dimensions of the laminated body S, and is formed of the laminated body S and the thickness direction (Z direction). A holding chuck 21a of the work 1 is provided on the holding surface facing the head. As a specific example of the holding chuck 21a, when the thickness of the work 1 is about several tens of μm such as an ultrathin wafer, a tape-shaped adhesive sheet such as a dicing tape is used, and the non-processed surface 1b of the work 1 is used. It is preferable to attach an adhesive sheet to the entire surface to support the wafer. Further, by attaching a ring-shaped holding frame (not shown) such as a dicing frame to the outer peripheral portion of the adhesive sheet to reinforce it, it is possible to make it transportable.
The laser irradiation unit 22 is provided as a part of an optical system that guides the laser light L from a laser light source (not shown) such as a laser oscillator toward the laminated body S in the thickness direction (Z direction). In the case of the illustrated example as a specific example of the laser irradiation unit 22, a laser scanner is used to scan (sweep) the laser beam L along the laminated body S.
The modified peeling drive unit 23 is an optical axis relative moving mechanism that moves either one of the modified peeling holding member 21 or the laser irradiation unit 22 or both the modified peeling holding member 21 and the laser irradiation unit 22. The modification / peeling drive unit 23 refers to the separation layer portion 3b of the laminated body S in which the laser beam L emitted from the laser irradiation unit 22 by the modification / peeling control unit 24 is held by the modification / peeling holding member 21. It is configured to move relatively in at least two directions (XY directions) intersecting the irradiation direction (Z direction) of the laser beam L from the laser irradiation unit 22. As a result, the irradiated portion of the laser beam L in the separation layer portion 3b is altered so that it can be peeled off with a slight external force.

ところで、仮接着層３（接着層部３ａ）を構成する接着剤は、図１（ｂ）に示されるように、貼り合わせ装置１０による加圧で厚み方向（Ｚ方向）へ圧縮されるため、仮接着層３（分離層部３ｂ）の外縁３ｃよりも食み出るおそれがある。図示例では、接着層部３ａとなる接着剤が、分離層部３ｂの外縁３ｃからの食み出し（突出）に留まらず、ワーク１の外側端面１ｃや支持体２の外側端面２ｃからも膨出している。
このため、図２に示されるように、変性剥離装置２０のレーザ照射部２２から分離層部３ｂの全面に亘ってレーザ光Ｌを照射しても、仮接着層３（分離層部３ｂ）の外縁３ｃから食み出した接着層部３ａの外端にはレーザ光Ｌが照射されない。これにより、分離層部３ｂの外縁３ｃから食み出した接着層部３ａの外端には、レーザ光Ｌで変質しない未剥離部位３ｄが周方向の一部又は周方向全体に亘り生じてしまう。
また、ワーク１の角部（エッジ部）に限らず支持体２の角部（エッジ部）は、一般的に面取り加工で面取り２ｄが形成される。このため、変性剥離装置２０のレーザ照射部２２から照射されたレーザ光Ｌが、支持体２の面取り２ｄで散乱（乱反射）する可能性が高い。これにより、図１（ｃ）に示されるように、貼り合わせ装置１０による加圧でもワーク１や支持体２の外縁端面から仮接着層３（接着層部３ａ）の食み出しが生じなくとも、面取り２ｄと厚み方向（Ｚ方向）へ対向する仮接着層３（分離層部３ｂ）の外縁３ｃの近傍には、レーザ光Ｌで変質しない未剥離部位３ｅを生じてしまう。 By the way, as shown in FIG. 1B, the adhesive constituting the temporary adhesive layer 3 (adhesive layer portion 3a) is compressed in the thickness direction (Z direction) by the pressurization by the bonding device 10. There is a possibility that it will squeeze out from the outer edge 3c of the temporary adhesive layer 3 (separation layer portion 3b). In the illustrated example, the adhesive to be the adhesive layer portion 3a swells not only from the outer edge 3c of the separation layer portion 3b but also from the outer end surface 1c of the work 1 and the outer end surface 2c of the support 2. It is out.
Therefore, as shown in FIG. 2, even if the laser beam L is irradiated from the laser irradiation portion 22 of the modification peeling device 20 over the entire surface of the separation layer portion 3b, the temporary adhesive layer 3 (separation layer portion 3b) The laser beam L is not applied to the outer end of the adhesive layer portion 3a protruding from the outer edge 3c. As a result, at the outer end of the adhesive layer portion 3a protruding from the outer edge 3c of the separation layer portion 3b, an unpeeled portion 3d that is not deteriorated by the laser beam L is generated over a part of the circumferential direction or the entire circumferential direction. ..
Further, not only the corner portion (edge portion) of the work 1 but also the corner portion (edge portion) of the support 2 is generally chamfered to form a chamfer 2d. Therefore, there is a high possibility that the laser beam L emitted from the laser irradiation unit 22 of the modification peeling device 20 is scattered (diffusely reflected) by the chamfer 2d of the support 2. As a result, as shown in FIG. 1 (c), even if the pressure applied by the bonding device 10 does not cause the temporary adhesive layer 3 (adhesive layer portion 3a) to squeeze out from the outer edge end faces of the work 1 and the support 2. In the vicinity of the outer edge 3c of the temporary adhesive layer 3 (separation layer portion 3b) facing the chamfer 2d in the thickness direction (Z direction), an unpeeled portion 3e that is not deteriorated by the laser beam L is generated.

そこで、このような課題を解決するために本発明の実施形態に係るワーク分離装置Ａは、図３〜図５や図６に示されるように、仮接着層３（接着層部３ａや分離層部３ｂ）の外縁３ｃに生じる未剥離部位３ｄ，３ｅを破壊剥離装置３０で壊して引き剥がす。
本発明の実施形態（第一実施形態）に係るワーク分離装置Ａでは、図３〜図５に示されるように、接着層部３ａにおいて分離層部３ｂの外縁３ｃから食み出した外端に生じる未剥離部位３ｄを破壊剥離装置３０で破壊している。
また本発明の実施形態（第二実施形態）に係るワーク分離装置Ａでは、図６に示されるように、分離層部３ｂの外縁３ｃの近傍に生じた未剥離部位３ｅを破壊剥離装置３０で破壊している。 Therefore, in order to solve such a problem, the work separating device A according to the embodiment of the present invention has a temporary adhesive layer 3 (adhesive layer portion 3a or separation layer) as shown in FIGS. 3 to 5 and 6. The unpeeled portions 3d and 3e generated on the outer edge 3c of the part 3b) are broken by the breaking peeling device 30 and peeled off.
In the work separating device A according to the embodiment (first embodiment) of the present invention, as shown in FIGS. 3 to 5, the outer end of the adhesive layer portion 3a protrudes from the outer edge 3c of the separating layer portion 3b. The generated unpeeled portion 3d is destroyed by the breaking peeling device 30.
Further, in the work separating device A according to the embodiment (second embodiment) of the present invention, as shown in FIG. 6, the unpeeled portion 3e generated in the vicinity of the outer edge 3c of the separating layer portion 3b is broken and peeled by the breaking peeling device 30. It is destroying.

破壊剥離装置３０は、積層体Ｓを着脱自在に保持するように設けられる破壊剥離用保持部材３１と、破壊剥離用保持部材３１で保持された積層体Ｓの仮接着層３の外縁３ｃと対向して設けられる破壊剥離用剥離部材３２と、破壊剥離用剥離部材３２を仮接着層３の外縁３ｃに向けて移動させるように設けられる破壊剥離用駆動部３３と、を主要な構成要素として備えている。さらに破壊剥離装置３０は、積層体Ｓのワーク１又は支持体２のいずれか一方を他方に対して厚み方向（Ｚ方向）へ引き離すように設けられる破壊剥離用隔離部材３４と、破壊剥離用駆動部３３及び破壊剥離用隔離部材３４を作動制御するように設けられる破壊剥離用制御部３５と、が備えられる。
破壊剥離用保持部材３１は、図３（ａ）などに示されるように、ワーク１の加工面１ａ又は支持体２の裏面２ｂと厚み方向（Ｚ方向）へ対向する表面側に保持チャック３１ａが設けられる。
また破壊剥離用保持部材３１は、変性剥離装置２０の変性剥離用保持部材２１と兼用することが可能である。この場合には図５（ａ）（ｂ）に示されるように、変性剥離用保持部材２１の保持チャック２１ａでもある破壊剥離用保持部材３１の保持チャック３１ａに対し、積層体Ｓのワーク１が保持された状態で、変性剥離装置２０による仮接着層３の変性工程から、破壊剥離装置３０による仮接着層３の外縁剥離工程へ移行可能になる。 The destructive peeling device 30 faces the destructive peeling holding member 31 provided so as to detachably hold the laminated body S and the outer edge 3c of the temporary adhesive layer 3 of the laminated body S held by the destructive peeling holding member 31. A destructive peeling peeling member 32 provided as a main component thereof and a destructive peeling drive unit 33 provided so as to move the destructive peeling peeling member 32 toward the outer edge 3c of the temporary adhesive layer 3 are provided as main components. ing. Further, the destructive peeling device 30 includes a destructive peeling isolation member 34 provided so as to separate either the work 1 or the support 2 of the laminated body S from the other in the thickness direction (Z direction), and a destructive peeling drive. A destructive peeling control unit 35 provided to control the operation of the destructive peeling isolation member 34 and the destructive peeling isolation member 34 is provided.
As shown in FIG. 3A and the like, the fracture peeling holding member 31 has a holding chuck 31a on the front surface side facing the machined surface 1a of the work 1 or the back surface 2b of the support 2 in the thickness direction (Z direction). Provided.
Further, the breaking peeling holding member 31 can also be used as the modifying peeling holding member 21 of the modified peeling device 20. In this case, as shown in FIGS. 5A and 5B, the work 1 of the laminated body S is attached to the holding chuck 31a of the destructive peeling holding member 31, which is also the holding chuck 21a of the modified peeling holding member 21. In the held state, it becomes possible to shift from the modification step of the temporary adhesive layer 3 by the modification peeling device 20 to the outer edge peeling step of the temporary adhesive layer 3 by the breaking peeling device 30.

破壊剥離用剥離部材３２は、図３（ａ）などに示されるように、仮接着層３（接着層部３ａや分離層部３ｂ）の外縁３ｃにおいて少なくとも周方向一部に向けて厚み方向（Ｚ方向）と交差する仮接着層３に沿った方向（ＸＹ方向）へ往復動自在に支持される。
破壊剥離用剥離部材３２の一例として図３（ｂ）の実線に示される場合には、仮接着層３（接着層部３ａや分離層部３ｂ）の外縁３ｃに対して、破壊剥離用剥離部材３２を一つのみ配置している。
またその他の例として、図３（ｂ）の二点鎖線に示されるように、仮接着層３（接着層部３ａや分離層部３ｂ）の外縁３ｃに沿って、破壊剥離用剥離部材３２を複数それぞれ所定間隔毎に配置することも可能である。図示例では、外縁３ｃの一半部に破壊剥離用剥離部材３２を３つそれぞれ周方向へ等間隔毎に配置している。なお、図示例以外に仮接着層３の大きさに対応して破壊剥離用剥離部材３２を２つ又は４つ以上配置することも可能である。
さらに破壊剥離用剥離部材３２は、その先端側に破壊刃３２ａを有する。
破壊刃３２ａは、ワーク１や支持体２のＸＹ方向サイズよりも小さな幅で且つ先端に向かって徐々にＺ方向へ厚くなる楔型の尖った形状に形成され、楔型の尖った刃部を、仮接着層３（接着層部３ａや分離層部３ｂ）の外縁３ｃの少なくとも周方向一部に対してＸＹ方向へ対向するように配置している。 As shown in FIG. 3A and the like, the destructive peeling member 32 has a thickness direction (at least in the circumferential direction) at the outer edge 3c of the temporary adhesive layer 3 (adhesive layer portion 3a and separation layer portion 3b). It is reciprocally supported in the direction (XY direction) along the temporary adhesive layer 3 intersecting the Z direction).
When shown in the solid line of FIG. 3B as an example of the destructive peeling member 32, the destructive peeling member is attached to the outer edge 3c of the temporary adhesive layer 3 (adhesive layer portion 3a and separation layer portion 3b). Only one 32 is arranged.
As another example, as shown by the alternate long and short dash line in FIG. 3B, the destructive peeling member 32 is formed along the outer edge 3c of the temporary adhesive layer 3 (adhesive layer portion 3a and separation layer portion 3b). It is also possible to arrange a plurality of each at predetermined intervals. In the illustrated example, three peeling members 32 for breaking peeling are arranged at equal intervals in the circumferential direction on a half portion of the outer edge 3c. In addition to the illustrated example, it is also possible to arrange two or four or more peeling members 32 for breaking peeling according to the size of the temporary adhesive layer 3.
Further, the destructive peeling member 32 has a destructive blade 32a on the tip end side thereof.
The breaking blade 32a is formed in a wedge-shaped pointed shape having a width smaller than the size of the work 1 and the support 2 in the XY direction and gradually thickening in the Z direction toward the tip, and forms a wedge-shaped pointed blade portion. , The temporary adhesive layer 3 (adhesive layer portion 3a and separation layer portion 3b) is arranged so as to face at least a part in the circumferential direction of the outer edge 3c in the XY direction.

破壊剥離用駆動部３３は、アクチュエーターなどから構成され、破壊剥離用の制御部３５により、破壊剥離用剥離部材３２の破壊刃３２ａを、仮接着層３（接着層部３ａや分離層部３ｂ）の外縁３ｃの少なくとも周方向一部に向けてＸＹ方向へ往復動させる。図示例では、円形の仮接着層３（接着層部３ａや分離層部３ｂ）の中心位置Оに向けて往復動させる場合を示している。
また破壊剥離用駆動部３３は、後述する破壊剥離用制御部３５によって変性剥離装置２０の作動と連動するように作動制御することが可能である。この場合には、レーザ照射部２２からのレーザ光Ｌの照射が完了した後に、破壊剥離用駆動部３３の作動を開始することが可能になる。
詳しく説明すると、破壊剥離用駆動部３３により破壊剥離用剥離部材３２は、図３（ａ）（ｂ）の一点鎖線や図６の一点鎖線に示される初期状態で、仮接着層３（接着層部３ａや分離層部３ｂ）の外縁３ｃからＸＹ方向へ離れた位置に破壊刃３２ａを待機させている。
次に破壊剥離用剥離部材３２は、図３（ａ）（ｂ）の実線や図６の実線に示されるように、破壊刃３２ａを待機位置Ｐ１から仮接着層３（接着層部３ａや分離層部３ｂ）の外縁３ｃに向け移動して、外縁３ｃの少なくとも周方向一部に突き当てる。これにより、仮接着層３（接着層部３ａや分離層部３ｂ）の外縁３ｃにおいて破壊刃３２ａが突き当たった周方向一部の箇所は、衝撃で壊れる。
ここで、図３〜図５に示される第一実施形態の場合には、分離層部３ｂの外縁３ｃから食み出した接着層部３ａの外端に生じる未剥離部位３ｄにおいて、その周方向一部が部分的に破壊される。
また、図６に示される第二実施形態の場合には、分離層部３ｂの外縁３ｃの近傍に生じた未剥離部位３ｅにおいて、その周方向一部が部分的に破壊される。
これに続いて破壊剥離用剥離部材３２は、図４に示されるように、破壊刃３２ａを突き当て位置Ｐ２から更に移動して、外縁３ｃの少なくとも周方向一部に進入させている。この進入位置Ｐ３への破壊刃３２ａの移動により、外縁３ｃの少なくとも周方向一部が厚み方向（Ｚ方向）へ押し広げられ、破壊刃３２ａによる外縁３ｃの部分的な破壊箇所が、突き当て位置Ｐ２を中心としてワーク１及び支持体２の周方向へ徐々に広がる。
最後に破壊剥離用剥離部材３２は、破壊刃３２ａを待機位置Ｐ１に戻して、それ以降は変性剥離装置２０の変性剥離用保持部材２１や破壊剥離用保持部材３１に積層体Ｓのワーク１が保持される度に、上述した作動が繰り返される。 The destructive peeling drive unit 33 is composed of an actuator or the like, and the destructive peeling control unit 35 is used to attach the destructive blade 32a of the destructive peeling member 32 to the temporary adhesive layer 3 (adhesive layer portion 3a or separation layer portion 3b). It is reciprocated in the XY direction toward at least a part of the outer edge 3c in the circumferential direction. The illustrated example shows a case where the temporary adhesive layer 3 (adhesive layer portion 3a and separation layer portion 3b) is reciprocated toward the center position О of the circular temporary adhesive layer 3 (adhesive layer portion 3a and separation layer portion 3b).
Further, the destructive peeling drive unit 33 can be operated and controlled so as to be interlocked with the operation of the destructive peeling device 20 by the destructive peeling control unit 35 described later. In this case, it is possible to start the operation of the destructive peeling drive unit 33 after the irradiation of the laser beam L from the laser irradiation unit 22 is completed.
More specifically, the destructive peeling member 32 by the destructive peeling drive unit 33 is in the initial state shown by the alternate long and short dash line in FIGS. 3A and 3B, and the temporary adhesive layer 3 (adhesive layer). The breaking blade 32a is made to stand by at a position away from the outer edge 3c of the portion 3a and the separation layer portion 3b) in the XY direction.
Next, as shown in the solid line of FIGS. 3 (a) and 3 (b) and the solid line of FIG. 6, the destructive peeling member 32 separates the destructive blade 32a from the standby position P1 to the temporary adhesive layer 3 (adhesive layer portion 3a and separation). It moves toward the outer edge 3c of the layer portion 3b) and abuts against at least a part of the outer edge 3c in the circumferential direction. As a result, a part of the outer edge 3c of the temporary adhesive layer 3 (adhesive layer portion 3a and separation layer portion 3b) where the breaking blade 32a abuts is broken by the impact.
Here, in the case of the first embodiment shown in FIGS. 3 to 5, the circumferential direction of the unpeeled portion 3d generated at the outer end of the adhesive layer portion 3a protruding from the outer edge 3c of the separation layer portion 3b. Partially destroyed.
Further, in the case of the second embodiment shown in FIG. 6, a part of the unpeeled portion 3e generated in the vicinity of the outer edge 3c of the separation layer portion 3b in the circumferential direction is partially destroyed.
Following this, as shown in FIG. 4, the destructive peeling member 32 further moves the destructive blade 32a from the abutting position P2 to enter at least a part of the outer edge 3c in the circumferential direction. By the movement of the breaking blade 32a to the approach position P3, at least a part of the outer edge 3c in the circumferential direction is expanded in the thickness direction (Z direction), and the partial breaking point of the outer edge 3c by the breaking blade 32a is the abutting position. It gradually spreads around P2 in the circumferential direction of the work 1 and the support 2.
Finally, the destructive peeling member 32 returns the destructive blade 32a to the standby position P1, and thereafter, the work 1 of the laminated body S is placed on the denatured peeling holding member 21 and the destructive peeling holding member 31 of the denatured peeling device 20. Each time it is held, the above-mentioned operation is repeated.

破壊剥離用隔離部材３４は、図５（ａ）（ｂ）に示されるように、ワーク１又は支持体２のいずれか一方を他方に対して厚み方向（Ｚ方向）へ引き離す分離機構である。破壊剥離用隔離部材３４は、ワーク１又は支持体２のいずれか一方に対して着脱自在に取り付けられる仮止め部３４ａと、仮止め部３４ａでワーク１又は支持体２のいずれか一方を他方に対して厚み方向（Ｚ方向）へ引き離すように移動する隔離駆動部３４ｂと、で構成することが好ましい。
仮止め部３４ａとしては、吸引による差圧でワーク１又は支持体２に吸着保持される吸着パッドや、粘着力でワーク１又は支持体２に粘着保持される粘着パッドなどが用いられる。
仮止め部３４ａは、ワーク１又は支持体２に対する取り付け力（吸着力や粘着力）を、変質した仮接着層３によるワーク１と支持体２の剥離力が所定値以上になると解放するように設定することが好ましい。仮止め部３４ａが吸着パッドである場合には、吸着パッドのサイズ変更や吸引力の調整などにより、ワーク１又は支持体２に対する吸着力を制御して、仮接着層３（分離層部３ｂ）の剥離又は破壊が所定値を超えると、ワーク１又は支持体２が開放されるように設定する。仮止め部３４ａが粘着パッドである場合には、粘着パッドのサイズ変更や粘着力の調整などにより、ワーク１又は支持体２に対する粘着力を制御して、仮接着層３（分離層部３ｂ）の剥離又は破壊が所定値を超えると、ワーク１又は支持体２が開放されるように設定する。
さらに仮止め部３４ａは、ワーク１又は支持体２のいずれか一方において破壊刃３２ａの近傍位置に取り付けることが好ましい。ワーク１又は支持体２における破壊剥離用剥離部材３２の近傍位置とは、図３（ｂ）の二点鎖線に示されるように、ワーク１又は支持体２の外周部位において、破壊刃３２ａによる仮接着層３の外縁３ｃの破壊位置、すなわち破壊刃３２ａの突き当て位置Ｐ２及び進入位置Ｐ３と近い箇所が該当する。つまり、ワーク１又は支持体２の外周部位で且つワーク１又は支持体２の中心位置Оと破壊刃３２ａとを結ぶ線上に仮止め部３４ａに取り付けられる。 As shown in FIGS. 5A and 5B, the destructive peeling isolation member 34 is a separation mechanism that separates either the work 1 or the support 2 from the other in the thickness direction (Z direction). The destructive peeling isolation member 34 has a temporary fixing portion 34a that is detachably attached to either the work 1 or the support 2 and a temporary fixing portion 34a that attaches either the work 1 or the support 2 to the other. On the other hand, it is preferably composed of an isolation drive unit 34b that moves so as to be separated in the thickness direction (Z direction).
As the temporary fixing portion 34a, a suction pad that is suction-held by the work 1 or the support 2 by a differential pressure due to suction, an adhesive pad that is adhesively held by the work 1 or the support 2 by an adhesive force, or the like is used.
The temporary fixing portion 34a releases the attachment force (adsorption force and adhesive force) to the work 1 or the support 2 when the peeling force between the work 1 and the support 2 by the altered temporary adhesive layer 3 exceeds a predetermined value. It is preferable to set it. When the temporary fixing portion 34a is a suction pad, the suction force with respect to the work 1 or the support 2 is controlled by changing the size of the suction pad, adjusting the suction force, or the like, and the temporary adhesive layer 3 (separation layer portion 3b). The work 1 or the support 2 is set to be opened when the peeling or breaking of the work exceeds a predetermined value. When the temporary fixing portion 34a is an adhesive pad, the adhesive force to the work 1 or the support 2 is controlled by changing the size of the adhesive pad, adjusting the adhesive force, or the like, and the temporary adhesive layer 3 (separation layer portion 3b). The work 1 or the support 2 is set to be opened when the peeling or breaking of the work 1 exceeds a predetermined value.
Further, the temporary fixing portion 34a is preferably attached to either the work 1 or the support 2 at a position close to the breaking blade 32a. As shown by the alternate long and short dash line in FIG. 3B, the position near the destructive peeling member 32 on the work 1 or the support 2 is provisionally provided by the destructive blade 32a at the outer peripheral portion of the work 1 or the support 2. The fracture position of the outer edge 3c of the adhesive layer 3, that is, the portion close to the abutting position P2 and the approach position P3 of the fracture blade 32a corresponds to this. That is, it is attached to the temporary fixing portion 34a on the outer peripheral portion of the work 1 or the support 2 and on the line connecting the center position О of the work 1 or the support 2 and the breaking blade 32a.

隔離駆動部３４ｂは、アクチュエーターなどから構成され、後述する破壊剥離用制御部３５により破壊剥離用駆動部３３の作動と連動して、破壊剥離用剥離部材３２の往復動が終了する度に仮止め部３４ａを接離移動させる。
詳しく説明すると、隔離駆動部３４ｂにより仮止め部３４ａは、その初期状態（図示しない）でワーク１又は支持体２のいずれか一方から離れた位置に待機している。
次に破壊剥離用剥離部材３２は、破壊剥離用剥離部材３２が待機位置Ｐ１に戻った後に、図５（ａ）に示されるように、仮止め部３４ａとなる吸着パッドや粘着パッドを、支持体２の裏面２ｂの外周部位に取り付けている。これに続いて図５（ｂ）に示されるように、隔離駆動部３４ｂにより、破壊剥離用保持部材３１が保持されたワーク１の仮接着層３（接着層部３ａ）から支持体２をＺ方向へ引き離す。この支持体２の引き離しによって、仮接着層３（分離層部３ｂ）が僅かな外力でもスムーズに剥離する。
また、この際に何かの理由で、仮止め部３４ａによりワーク１と支持体２を引き離しても、レーザ光Ｌの照射などで変質した仮接着層３（分離層部３ｂ）がスムーズに剥離せずに、ワーク１又は支持体２に対する取り付け力（吸着力や粘着力）が所定値を超えた場合には、仮止め部３４ａとなる吸着パッドや粘着パッドが支持体２（又はワーク１）から解放されて外れる。これにより、ワーク１に無理な外力が作用しない。 The isolation drive unit 34b is composed of an actuator or the like, and is temporarily fixed each time the reciprocating movement of the destructive peeling member 32 is completed in conjunction with the operation of the destructive peeling drive unit 33 by the destructive peeling control unit 35 described later. The portion 34a is moved in contact with and separated from each other.
More specifically, the isolation drive unit 34b allows the temporary fixing unit 34a to stand by at a position away from either the work 1 or the support 2 in its initial state (not shown).
Next, the destructive peeling member 32 supports the suction pad or the adhesive pad serving as the temporary fixing portion 34a as shown in FIG. 5A after the destructive peeling member 32 returns to the standby position P1. It is attached to the outer peripheral portion of the back surface 2b of the body 2. Following this, as shown in FIG. 5B, the isolation drive unit 34b Z-supports the support 2 from the temporary adhesive layer 3 (adhesive layer portion 3a) of the work 1 in which the holding member 31 for breaking peeling is held. Pull away in the direction. By separating the support 2, the temporary adhesive layer 3 (separation layer portion 3b) is smoothly peeled off even with a slight external force.
Further, at this time, even if the work 1 and the support 2 are separated by the temporary fixing portion 34a for some reason, the temporary adhesive layer 3 (separation layer portion 3b) that has been altered by irradiation with the laser beam L or the like is smoothly peeled off. If the attachment force (adhesive force or adhesive force) to the work 1 or the support 2 exceeds a predetermined value, the suction pad or the adhesive pad serving as the temporary fixing portion 34a becomes the support 2 (or the work 1). It is released from and comes off. As a result, an unreasonable external force does not act on the work 1.

破壊剥離用制御部３５は、破壊剥離用駆動部３３及び破壊剥離用隔離部材３４（隔離駆動部３４ｂ）に加えて、貼り合わせ装置１０の接合用制御部１４や変性剥離装置２０の変性剥離用駆動部２３などともそれぞれ電気的に接続した制御回路（図示しない）を有するコントローラである。破壊剥離用制御部３５となるコントローラは、制御回路に予め設定されたプログラムに従って、予め設定されたタイミングで順次それぞれ作動制御している。 In addition to the destructive peeling drive unit 33 and the destructive peeling isolation member 34 (separation drive unit 34b), the destructive peeling control unit 35 is used for denatured peeling of the joining control unit 14 of the bonding device 10 and the destructive peeling device 20. It is a controller having a control circuit (not shown) electrically connected to each of the drive unit 23 and the like. The controller, which is the destructive peeling control unit 35, sequentially controls the operation at preset timings according to a program preset in the control circuit.

そして、破壊剥離用制御部３５の制御回路に設定されたプログラムを、ワーク分離装置Ａの破壊剥離装置３０によるワーク分離方法として説明する。
本発明の実施形態（第一実施形態，第二実施形態）に係るワーク分離装置Ａ（破壊剥離装置３０）を用いたワーク分離方法の分離過程は、ワーク１及び支持体２の間に配置された仮接着層３の外縁３ｃに向けて破壊剥離用剥離部材３２を移動する外縁剥離工程と、ワーク１又は支持体２のいずれか一方を他方に対して破壊剥離用隔離部材３４で厚み方向へ引き離す隔離工程と、を主要な工程として含んでいる。
外縁剥離工程では、破壊剥離装置３０の破壊剥離用剥離部材３２及び破壊剥離用駆動部３３の作動により、仮接着層３の外縁３ｃの少なくとも周方向一部に破壊刃３２ａを突き当てて、仮接着層３の外縁３ｃに生じる未剥離部位３ｄ，３ｅを壊す。
隔離工程では、破壊剥離用隔離部材３４となる仮止め部３４ａ及び隔離駆動部３４ｂの作動により、破壊刃３２ａで壊した未剥離部位３ｄ，３ｅからワーク１と支持体２を引き剥がす。 Then, the program set in the control circuit of the breaking peeling control unit 35 will be described as a work separating method by the breaking peeling device 30 of the work separating device A.
The separation process of the work separation method using the work separation device A (breaking peeling device 30) according to the embodiment of the present invention (first embodiment, second embodiment) is arranged between the work 1 and the support 2. The outer edge peeling step of moving the destructive peeling peeling member 32 toward the outer edge 3c of the temporary adhesive layer 3 and the thickness direction of either the work 1 or the support 2 with the destructive peeling separating member 34 with respect to the other. It includes a separation step of pulling away and a main step.
In the outer edge peeling step, the breaking blade 32a is abutted against at least a part of the outer edge 3c of the temporary adhesive layer 3 in the circumferential direction by the operation of the breaking peeling member 32 and the breaking peeling drive unit 33 of the breaking peeling device 30, and temporarily. The unpeeled portions 3d and 3e generated on the outer edge 3c of the adhesive layer 3 are broken.
In the isolation step, the work 1 and the support 2 are peeled off from the unpeeled portions 3d and 3e broken by the breaking blade 32a by the operation of the temporary fixing portion 34a and the isolation driving portion 34b which are the separating members 34 for breaking and peeling.

このような本発明の実施形態に係るワーク分離装置Ａ及びワーク分離方法によると、レーザ光Ｌの照射などにより仮接着層３（分離層部３ｂ）の少なくとも外端を除く略全面が変質した状態で、仮接着層３（接着層部３ａ，分離層部３ｂ）の外縁３ｃに向け（破壊剥離用）剥離部材３２が移動して、外縁３ｃの少なくとも周方向一部に破壊刃３２ａが突き当たる。
これにより、外縁３ｃの少なくとも周方向一部に生じていた未剥離部位３ｄ，３ｅが、破壊刃３２ａの突き当たりで壊される。これに続く（破壊剥離用）隔離部材３４の作動に伴い、破壊刃３２ａで壊した未剥離部位３ｄ，３ｅから剥離がワーク１及び支持体２の周方向へ徐々に広がって、ワーク１と支持体２が引き剥がされる。
これにより、未剥離部位３ｄ，３ｅの破壊箇所からワーク１と支持体２の接合面全体がスムーズに剥離可能となる。
したがって、変質後の仮接着層３に未剥離部位３ｄ，３ｅが存在しても、ワーク１と支持体２をスムーズに剥離することができる。
その結果、半導体基板や薄型ウエハと支持体の貼り合わせで仮接着層の熱硬化性樹脂が基板やウエハや支持体の外縁から食み出る従来のものに比べ、ワーク１と支持体２を大きな力で無理に剥離する必要がない。このため、ワーク１や支持体２に部分的な破損や割れ目，裂け目が生じることを防止できるとともに、その後の生産過程において異常の発生をも防止できる。
さらに、その他にもワーク１と支持体２の間に異物混入や、支持体２の表面に異物が付着した時などのように、レーザ光Ｌの照射などによる仮接着層３の変質のみでは部分的な未剥離部が生じた場合であっても、ワーク１と支持体２をスムーズに剥離できる。
これにより、ワーク１の生産過程における歩留まりの向上や加工性向上が図れる。 According to the work separating device A and the work separating method according to the embodiment of the present invention, substantially the entire surface of the temporary adhesive layer 3 (separation layer portion 3b) except for the outer end is deteriorated by irradiation with laser light L or the like. Then, the peeling member 32 moves toward the outer edge 3c of the temporary adhesive layer 3 (adhesive layer portion 3a, separation layer portion 3b) (for breaking peeling), and the breaking blade 32a abuts at least a part of the outer edge 3c in the circumferential direction.
As a result, the unpeeled portions 3d and 3e formed at least in the circumferential direction of the outer edge 3c are broken at the abutment of the breaking blade 32a. With the subsequent operation of the separating member 34 (for breaking peeling), the peeling gradually spreads in the circumferential direction of the work 1 and the support 2 from the unpeeled portions 3d and 3e broken by the breaking blade 32a, and supports the work 1 and the support. Body 2 is torn off.
As a result, the entire joint surface between the work 1 and the support 2 can be smoothly peeled off from the broken portion of the unpeeled portions 3d and 3e.
Therefore, even if the unpeeled portions 3d and 3e are present in the temporary adhesive layer 3 after the alteration, the work 1 and the support 2 can be smoothly peeled off.
As a result, the work 1 and the support 2 are larger than the conventional one in which the thermosetting resin of the temporary adhesive layer oozes out from the outer edge of the substrate, the wafer or the support when the semiconductor substrate or the thin wafer and the support are bonded together. There is no need to force peeling. Therefore, it is possible to prevent the work 1 and the support 2 from being partially damaged, cracked, or torn, and it is also possible to prevent the occurrence of abnormalities in the subsequent production process.
Furthermore, in addition to this, when foreign matter is mixed between the work 1 and the support 2, or when foreign matter adheres to the surface of the support 2, the temporary adhesive layer 3 is only partially altered by irradiation with laser light L or the like. The work 1 and the support 2 can be smoothly peeled off even when a specific unpeeled portion is generated.
As a result, it is possible to improve the yield and workability in the production process of the work 1.

特に、仮接着層３が、接着性を有する接着層部３ａと、光の吸収で剥離又は破壊するように変質可能な分離層部３ｂと、を有し、接着層部３ａ又は分離層部３ｂの外縁３ｃに生じる未剥離部位３ｄ，３ｅを、破壊刃３２ａで壊すことが好ましい。
この場合には、仮接着層３を挟んだワーク１と支持体２の加圧貼り合わせに伴って、分離層部３ｂの外縁３ｃから食み出した接着層部３ａの外端に生じる未剥離部位３ｄを、図３〜図５に示されるように破壊刃３２ａで壊す。
面取り２ｄによるレーザ光Ｌの散乱で分離層部３ｂの外縁３ｃの近傍に生じた未剥離部位３ｅを、図６に示されるように破壊刃３２ａで壊す。
したがって、分離層部３ｂの変質不良で生じた未剥離部位３ｄ，３ｅを確実に剥離することができる。
その結果、分離層部３ｂの変質不良を解消して、支持体２からワーク１に部分的な破損や割れ目，裂け目を生じることなく安定して剥離できる。 In particular, the temporary adhesive layer 3 has an adhesive layer portion 3a having adhesiveness and a separation layer portion 3b that can be denatured so as to be peeled off or destroyed by absorption of light, and the adhesive layer portion 3a or the separation layer portion 3b. It is preferable that the unpeeled portions 3d and 3e generated on the outer edge 3c of the above are broken by the breaking blade 32a.
In this case, the work 1 sandwiching the temporary adhesive layer 3 and the support 2 are pressure-bonded to each other, and the adhesive layer portion 3a protruding from the outer edge 3c of the separation layer portion 3b is not peeled off. The part 3d is broken by the breaking blade 32a as shown in FIGS. 3 to 5.
The unpeeled portion 3e generated in the vicinity of the outer edge 3c of the separation layer portion 3b due to the scattering of the laser beam L by the chamfering 2d is broken by the breaking blade 32a as shown in FIG.
Therefore, the unpeeled portions 3d and 3e caused by the poor deterioration of the separation layer portion 3b can be surely peeled off.
As a result, the deterioration of the separation layer portion 3b can be eliminated, and the support 2 can be stably peeled from the work 1 without causing partial breakage, cracks, or crevices.

さらに、（破壊剥離用）隔離部材３４が、ワーク１又は支持体２のいずれか一方に対して着脱自在に取り付けられる仮止め部３４ａを有し、仮止め部３４ａを破壊刃３２ａの近傍に配置することが好ましい。
この場合には、ワーク１又は支持体２のいずれか一方に取り付けられた仮止め部３４ａを、他方に対して厚み方向（Ｚ方向）へ引き離すことにより、破壊刃３２ａの突き当たりで壊された箇所から仮接着層３（分離層部３ｂ）に空気などの気体が入る。
このため、仮接着層３（分離層部３ｂ）を挟んで気密状に接合されたワーク１と支持体２が、極めてスムーズに剥離可能となる。
したがって、ワーク１と支持体２の極めてスムーズな剥離を実現することができる。
その結果、ワーク１や支持体２に部分的な破損や割れ目，裂け目が生じることを確実に防止できる。 Further, the isolation member 34 (for destructive peeling) has a temporary fixing portion 34a that can be detachably attached to either the work 1 or the support 2, and the temporary fixing portion 34a is arranged in the vicinity of the breaking blade 32a. It is preferable to do so.
In this case, the temporary fixing portion 34a attached to either the work 1 or the support 2 is separated from the other in the thickness direction (Z direction), so that the portion broken at the abutment of the breaking blade 32a. A gas such as air enters the temporary adhesive layer 3 (separation layer portion 3b).
Therefore, the work 1 and the support 2 that are airtightly joined with the temporary adhesive layer 3 (separation layer portion 3b) sandwiched between them can be peeled off extremely smoothly.
Therefore, extremely smooth peeling of the work 1 and the support 2 can be realized.
As a result, it is possible to reliably prevent partial breakage, cracks, and crevices in the work 1 and the support 2.

また、仮止め部３４ａは、ワーク１又は支持体２に対する取り付け力（吸着力や粘着力）を、変質した仮接着層３によるワーク１と支持体２の剥離力が所定値以上になると解放するように設定することが好ましい。
この場合には、レーザ光Ｌの照射などで仮接着層３（分離層部３ｂ）を変質させても、ワーク１と支持体２の間に異物混入や、支持体２の表面に異物が付着した場合などの異常によって、仮止め部３４ａによりワーク１と支持体２を引き離しても、レーザ光Ｌの照射などで変質した仮接着層３（分離層部３ｂ）がスムーズに剥離せずに、ワーク１又は支持体２に対する取り付け力（吸着力や粘着力）が所定値を超えることがある。
この際には、仮止め部３４ａとなる吸着パッドや粘着パッドが支持体２又はワーク１から解放されて外れる。これにより、ワーク１又は支持体２に無理な外力が作用しない。
したがって、レーザ光Ｌの照射などで仮接着層３（分離層部３ｂ）に変質不良が生じた異常接合状態を簡単に検出して、ワーク１の無理な剥離を中断することができる。
その結果、異物の混入や異物の付着などの異常に対して、ロードセルなどの特別な測定手段を使うことなく、剥離不能な異常接合状態のワーク１及び支持体２（積層体Ｓ）を容易に検出できて迅速な対応が可能になるとともに、異常接合に伴ってワーク１や支持体２に部分的な破損や割れ目，裂け目が生じることを確実に防止できる。
うワーク１に部分的な破損や割れ目，裂け目の発生を確実に防止できる。 Further, the temporary fixing portion 34a releases the attachment force (adhesive force and adhesive force) to the work 1 or the support 2 when the peeling force between the work 1 and the support 2 by the altered temporary adhesive layer 3 exceeds a predetermined value. It is preferable to set as such.
In this case, even if the temporary adhesive layer 3 (separation layer portion 3b) is altered by irradiation with laser light L or the like, foreign matter is mixed between the work 1 and the support 2 or foreign matter adheres to the surface of the support 2. Even if the work 1 and the support 2 are separated by the temporary fixing portion 34a due to an abnormality such as the case where the temporary adhesive layer 3 (separation layer portion 3b) is separated by the temporary fixing portion 34a, the temporary adhesive layer 3 (separation layer portion 3b) that has been altered by irradiation with the laser beam L does not peel off smoothly. The attachment force (adhesive force or adhesive force) to the work 1 or the support 2 may exceed a predetermined value.
At this time, the suction pad or the adhesive pad serving as the temporary fixing portion 34a is released from the support 2 or the work 1 and comes off. As a result, an unreasonable external force does not act on the work 1 or the support 2.
Therefore, it is possible to easily detect an abnormally bonded state in which the temporary adhesive layer 3 (separation layer portion 3b) has deteriorated due to irradiation with laser light L or the like, and to interrupt the unreasonable peeling of the work 1.
As a result, the work 1 and the support 2 (laminated body S) in an abnormally bonded state that cannot be peeled off can be easily removed without using a special measuring means such as a load cell against abnormalities such as contamination of foreign substances and adhesion of foreign substances. In addition to being able to detect and promptly respond, it is possible to reliably prevent the work 1 and the support 2 from being partially damaged, cracked, or torn due to abnormal joining.
Partial damage, cracks, and crevices can be reliably prevented in the work piece 1.

なお、前示の実施形態（第一実施形態〜第三実施形態）において図示例では、ワーク１が円形の極薄ウエハであり、支持体２が円形のガラス板であり、仮接着層３の接着層部３ａや分離層部３ｂが円形の薄板状に形成される場合を示したが、これに限定されず、ワーク１が矩形の基板であり、支持体２が矩形板であり、仮接着層３の接着層部３ａや分離層部３ｂが矩形の薄板状に形成されてもよい。 In the illustrated examples of the above-described embodiments (first to third embodiments), the work 1 is a circular ultrathin wafer, the support 2 is a circular glass plate, and the temporary adhesive layer 3 is formed. The case where the adhesive layer portion 3a and the separation layer portion 3b are formed in the shape of a circular thin plate is shown, but the present invention is not limited to this, the work 1 is a rectangular substrate, the support 2 is a rectangular plate, and temporary bonding is performed. The adhesive layer portion 3a and the separation layer portion 3b of the layer 3 may be formed in the shape of a rectangular thin plate.

Ａ ワーク分離装置 １ ワーク
２ 支持体 ３ 仮接着層
３ａ 接着層部 ３ｂ 分離層部
３ｃ 外縁 ３ｄ，３ｅ 未剥離部位
３１ （破壊剥離用）保持部材 ３２ （破壊剥離用）剥離部材
３２ａ 破壊刃 ３３ （破壊剥離用）駆動部
３４ （破壊剥離用）隔離部材 ３４ａ 仮止め部
３５ （破壊剥離用）制御部 A Work separation device 1 Work 2 Support 3 Temporary adhesive layer 3a Adhesive layer part 3b Separation layer part 3c Outer edge 3d, 3e Unpeeled part 31 (For destructive peeling) Holding member 32 (For destructive peeling) Peeling member 32a Destruction blade 33 ( (For destructive peeling) Drive unit 34 (For destructive peeling) Isolation member 34a Temporary fixing part 35 (For destructive peeling) Control unit

Claims (5)

回路基板を含むワークと、前記ワークを平坦な状態に保持する支持体とが、仮接着層を介して接合されてなる積層体に対し、変性剥離装置により前記仮接着層が変質して前記ワークから前記支持体を剥離するワーク分離装置であって、
前記ワークを着脱自在に保持する保持部材と、
前記保持部材で保持した前記ワーク及び前記支持体の間に配置された前記仮接着層の外縁と対向する剥離部材と、
前記剥離部材を前記仮接着層の前記外縁に向けて移動する駆動部と、
前記ワーク又は前記支持体のいずれか一方を他方に対して厚み方向へ引き離す隔離部材と、
前記駆動部及び前記隔離部材を作動制御する制御部と、を備え、
前記仮接着層は、前記仮接着層の前記外縁に生じる前記変性剥離装置で変質しない未剥離部位を有し、
前記剥離部材は、前記仮接着層の前記外縁の少なくとも周方向一部に突き当たる破壊刃を有し、
前記制御部は、前記駆動部の作動により、前記剥離部材の前記破壊刃が前記未剥離部位を壊すように制御され、前記隔離部材の作動により、前記破壊刃で壊した前記未剥離部位から前記ワークと前記支持体が引き剥がされるように制御することを特徴とするワーク分離装置。 A workpiece including a circuit board, wherein a support for holding the workpiece in a flat state, with respect to temporary adhesion layer through the formed by bonding the laminate, wherein the temporary adhesion layer is altered by denaturing peeling device work A work separating device that peels off the support from
A holding member that holds the work detachably and
A peeling member facing the outer edge of the temporary adhesive layer arranged between the work held by the holding member and the support.
A drive unit that moves the peeling member toward the outer edge of the temporary adhesive layer, and
An isolation member that separates either one of the work or the support from the other in the thickness direction.
A control unit that controls the operation of the drive unit and the isolation member is provided.
The temporary adhesive layer has an unpeeled portion that is generated on the outer edge of the temporary adhesive layer and is not deteriorated by the modified peeling device.
The peeling member has a breaking blade that abuts at least a part of the outer edge of the temporary adhesive layer in the circumferential direction.
Wherein, by the operation of the drive unit, wherein the breaking blade peeling member is controlled so that breaking the previous SL unpeeled site, by the operation of the isolation member, wherein the unpeeled portion broke by the broken blade A work separating device characterized in that the work and the support are controlled so as to be peeled off. 前記仮接着層が、接着性を有する接着層部と、光の吸収で剥離又は破壊するように変質可能な分離層部と、を有し、前記接着層部又は前記分離層部の前記外縁に生じる前記未剥離部位が、前記破壊刃で壊されることを特徴とする請求項１記載のワーク分離装置。 The temporary adhesive layer has an adhesive layer portion having adhesiveness and a separation layer portion that can be denatured so as to be peeled off or destroyed by absorption of light, and is attached to the adhesive layer portion or the outer edge of the separation layer portion. The work separating device according to claim 1, wherein the generated unpeeled portion is broken by the breaking blade. 前記隔離部材が、前記ワーク又は前記支持体のいずれか一方に対して着脱自在に取り付けられる仮止め部を有し、前記仮止め部が前記破壊刃の近傍に配置されることを特徴とする請求項１又は２記載のワーク分離装置。 A claim characterized in that the isolation member has a temporary fixing portion that is detachably attached to either the work or the support, and the temporary fixing portion is arranged in the vicinity of the breaking blade. Item 1. The work separating device according to item 1 or 2. 前記仮止め部は、前記ワーク又は前記支持体に対する取り付け力が、変質した前記仮接着層による前記ワークと前記支持体の剥離力が所定値以上になると解放するように設定されることを特徴とする請求項３記載のワーク分離装置。 The temporary fixing portion is characterized in that the attachment force to the work or the support is set to be released when the peeling force between the work and the support by the altered temporary adhesive layer becomes a predetermined value or more. The work separating device according to claim 3. 回路基板を含むワークと、前記ワークを平坦な状態に保持する支持体とが、仮接着層を介して接合されてなる積層体に対し、変性剥離装置により前記仮接着層が変質して前記ワークから前記支持体を剥離するワーク分離方法であって、
保持部材で保持した前記ワーク及び前記支持体の間に配置された前記仮接着層の外縁に向けて剥離部材を移動する外縁剥離工程と、
前記ワーク又は前記支持体のいずれか一方を他方に対して隔離部材で厚み方向へ引き離す隔離工程と、を含み、
前記仮接着層は、前記仮接着層の前記外縁に生じる前記変性剥離装置で変質しない未剥離部位を有し、
前記外縁剥離工程では、前記剥離部材の破壊刃が、前記仮接着層の前記外縁の少なくとも周方向一部に突き当たって前記未剥離部位を壊し、
前記隔離工程では、前記隔離部材の作動により、前記破壊刃で壊した前記未剥離部位から前記ワークと前記支持体を引き剥がすことを特徴とするワーク分離方法。 A workpiece including a circuit board, wherein a support for holding the workpiece in a flat state, with respect to temporary adhesion layer through the formed by bonding the laminate, wherein the temporary adhesion layer is altered by denaturing peeling device work This is a work separation method for peeling off the support from the body.
An outer edge peeling step of moving the peeling member toward the outer edge of the temporary adhesive layer arranged between the work held by the holding member and the support.
Including an isolation step in which either one of the work or the support is separated from the other by an isolation member in the thickness direction.
The temporary adhesive layer has an unpeeled portion that is generated on the outer edge of the temporary adhesive layer and is not deteriorated by the modified peeling device.
The outer edge peeling step, breaking blade of the release member breaks the unpeeled portion abuts at least in the circumferential direction a portion of the outer edge of the temporary adhesive layer,
In the isolation step, the work separation method is characterized in that the work and the support are peeled off from the unpeeled portion broken by the breaking blade by the operation of the isolation member.
JP2020069872A 2020-04-08 2020-04-08 Work separation device and work separation method Active JP6900540B1 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2020069872A JP6900540B1 (en) 2020-04-08 2020-04-08 Work separation device and work separation method
PCT/JP2021/011641 WO2021205855A1 (en) 2020-04-08 2021-03-22 Workpiece separation device and workpiece separation method
KR1020227006215A KR102433950B1 (en) 2020-04-08 2021-03-22 Work separation device and work separation method
CN202180004814.0A CN114175230B (en) 2020-04-08 2021-03-22 Workpiece separation device and workpiece separation method
TW110112111A TWI759164B (en) 2020-04-08 2021-04-01 Workpiece separation device and workpiece separation method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2020069872A JP6900540B1 (en) 2020-04-08 2020-04-08 Work separation device and work separation method

Publications (2)

Publication Number Publication Date
JP6900540B1 true JP6900540B1 (en) 2021-07-07
JP2021166274A JP2021166274A (en) 2021-10-14

Family

ID=76649985

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2020069872A Active JP6900540B1 (en) 2020-04-08 2020-04-08 Work separation device and work separation method

Country Status (5)

Country Link
JP (1) JP6900540B1 (en)
KR (1) KR102433950B1 (en)
CN (1) CN114175230B (en)
TW (1) TWI759164B (en)
WO (1) WO2021205855A1 (en)

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4401322B2 (en) * 2005-04-18 2010-01-20 日東電工株式会社 Support plate separation apparatus and support plate separation method using the same
JP5178887B2 (en) * 2011-07-29 2013-04-10 リンテック株式会社 Pasting device
JP6046926B2 (en) * 2012-06-20 2016-12-21 東京応化工業株式会社 Pasting device
DE102013007672A1 (en) * 2013-05-03 2014-11-06 Siltectra Gmbh Process and apparatus for wafer production with predefined breakaway release point
JP6004100B2 (en) * 2013-05-24 2016-10-05 富士電機株式会社 Manufacturing method of semiconductor device
JP2015145306A (en) * 2014-02-04 2015-08-13 旭硝子株式会社 Separation start part preparation method and separation start part preparation device of stacked body, and manufacturing method of electronic device
JP6354945B2 (en) * 2014-07-11 2018-07-11 旭硝子株式会社 Laminate peeling apparatus, peeling method, and electronic device manufacturing method
JP6463664B2 (en) 2015-11-27 2019-02-06 信越化学工業株式会社 Wafer processing body and wafer processing method
JP6863803B2 (en) * 2016-04-07 2021-04-21 株式会社半導体エネルギー研究所 Display device
JP6670683B2 (en) * 2016-06-07 2020-03-25 株式会社Ｓｃｒｅｅｎラミナテック Method and apparatus for separating work composed of carrier substrate and resin layer
WO2018042284A1 (en) * 2016-08-31 2018-03-08 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
KR102437535B1 (en) * 2016-11-15 2022-08-30 코닝 인코포레이티드 How to process the substrate
JP2019041051A (en) * 2017-08-28 2019-03-14 日東電工株式会社 Adhesive tape peeling method and adhesive tape peeling device
US11177153B2 (en) * 2018-03-20 2021-11-16 Chengdu Eswin Sip Technology Co., Ltd. Method of debonding work-carrier pair with thin devices
JP2019183030A (en) * 2018-04-12 2019-10-24 東京応化工業株式会社 Composition for detachment, method for detaching adhesive, and manufacturing method of electronic component
KR102240325B1 (en) * 2018-06-18 2021-04-13 신에츠 엔지니어링 가부시키가이샤 Work separation device and work separation method
JP6518372B1 (en) * 2018-08-09 2019-05-22 信越エンジニアリング株式会社 Workpiece transfer chuck and workpiece transfer method
WO2020065966A1 (en) * 2018-09-28 2020-04-02 シャープ株式会社 Method for manufacturing electronic device

Also Published As

Publication number Publication date
JP2021166274A (en) 2021-10-14
WO2021205855A1 (en) 2021-10-14
KR102433950B1 (en) 2022-08-18
KR20220025956A (en) 2022-03-03
TWI759164B (en) 2022-03-21
CN114175230A (en) 2022-03-11
CN114175230B (en) 2022-12-30
TW202145302A (en) 2021-12-01

Similar Documents

Publication Publication Date Title
KR100506109B1 (en) Separation mechanism for adhesive tape, separation apparatus for adhesive tape, separation method for adhesive tape, pickup apparatus for semiconductor chip, pickup method for semiconductor chip, manufacturing method for semiconductor apparatus, and manufacturing apparatus for semiconductor apparatus
JP4818187B2 (en) Manufacturing method of semiconductor device
JP6764552B2 (en) Work separation device and work separation method
KR20040086577A (en) Method of mamufacturing a semiconductor device
TWI831794B (en) Workpiece separation device and workpiece separation method
JP6900540B1 (en) Work separation device and work separation method
JP6228058B2 (en) Semiconductor manufacturing apparatus and semiconductor manufacturing method
WO2022230184A1 (en) Transfer apparatus and transfer method
JPWO2022230184A5 (en)
CN115803851B (en) Workpiece separating device and workpiece separating method
JP6616029B2 (en) Semiconductor manufacturing apparatus and semiconductor manufacturing method
WO2022201535A1 (en) Workpiece separation device and workpiece separation method
JP2005116588A (en) Method of manufacturing chip component
JP6836003B1 (en) Work separation device and work separation method
JPWO2022201535A5 (en)
TW201705244A (en) Methods and apparatus for controlling and initiating de-bonding of substrates from carriers
CN115775764A (en) Wafer transfer method
JP2016154200A (en) Sheet peeling device and peeling method
JP2006156619A (en) Substrate splitting method
JP2007311689A (en) Semiconductor ultrasonic joining method and device

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20201030

A871 Explanation of circumstances concerning accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A871

Effective date: 20201030

A975 Report on accelerated examination

Free format text: JAPANESE INTERMEDIATE CODE: A971005

Effective date: 20201218

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20210112

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20210309

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20210601

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20210616

R150 Certificate of patent or registration of utility model

Ref document number: 6900540

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250