JP6880251B2 - 閾値電圧が調整可能な高電子移動度トランジスタ - Google Patents
閾値電圧が調整可能な高電子移動度トランジスタ Download PDFInfo
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- JP6880251B2 JP6880251B2 JP2019572258A JP2019572258A JP6880251B2 JP 6880251 B2 JP6880251 B2 JP 6880251B2 JP 2019572258 A JP2019572258 A JP 2019572258A JP 2019572258 A JP2019572258 A JP 2019572258A JP 6880251 B2 JP6880251 B2 JP 6880251B2
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7831—Field effect transistors with field effect produced by an insulated gate with multiple gate structure
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- H01L29/772—Field effect transistors
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- H01L29/78391—Field effect transistors with field effect produced by an insulated gate the gate comprising a layer which is used for its ferroelectric properties
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- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/785—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET
- H01L29/7851—Field effect transistors with field effect produced by an insulated gate having a channel with a horizontal current flow in a vertical sidewall of a semiconductor body, e.g. FinFET, MuGFET with the body tied to the substrate
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- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
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Description
Claims (1)
- 高電子移動度トランジスタを制御する方法であって、前記トランジスタは、前記トランジスタのソースとドレインとの間に延在するフィンを有する半導体構造体を含み、前記トランジスタのトップゲートが前記フィンの上に配置され、前記トランジスタの2つのサイドゲートが、前記トップゲートから間隔を空けて前記フィンの対向する側壁に配置され、前記半導体構造体は、前記トップゲートの真下に位置決めされたキャップ層と、導電性を提供するために前記キャップ層の真下に配置されたチャネル層とによって形成されたヘテロ構造を含み、前記キャップ層は、前記ソースと前記ドレインとの間にキャリアチャネルを形成する前記ヘテロ構造を可能にして、前記キャップ層と前記チャネル層との界面に2次元電子ガス(2DEG)が形成されるように、窒化物系半導体材料を含み、前記方法は、
前記ソースと前記ドレインとの間の前記キャリアチャネルの導電率を変調するように、前記ソースに関して前記トップゲートに電圧を印加することと、
前記トランジスタの前記トップゲートの閾値電圧を変調するように、前記ソースに関して前記サイドゲートに電圧を印加することと、
を含み、
前記トップゲートの閾値電圧を増大させるために前記サイドゲートに印加される負のバイアスを増大させることを含み、
前記トップゲートの閾値電圧を測定することと、
前記ソースに関して前記閾値電圧の符号を変更する要求を検出することと、
前記測定された閾値電圧が正であり、負の閾値電圧が要求される場合、前記サイドゲートに正の電圧を印加することと、及び、
そうでなければ、前記測定された閾値電圧が負であり、正の閾値電圧が要求される場合、前記サイドゲートに負の電圧を印加することと、
を更に含む、方法。
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US15/785,596 US10886393B2 (en) | 2017-10-17 | 2017-10-17 | High electron mobility transistor with tunable threshold voltage |
US15/785,596 | 2017-10-17 | ||
PCT/JP2018/014829 WO2019077781A1 (en) | 2017-10-17 | 2018-03-30 | HIGH ELECTRON MOBILITY TRANSISTORS WITH ADJUSTABLE THRESHOLD VOLTAGE |
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EP (1) | EP3491672B1 (ja) |
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