JP6847780B2 - Circuit board and probe card - Google Patents

Description

The present invention relates to a circuit board and a probe card used for inspecting a semiconductor element.

As a substrate for a probe card for electrically inspecting a semiconductor element, a circuit board having a ceramic multilayer substrate and an organic multilayer portion provided on the ceramic multilayer substrate is used. The organic multilayer portion includes a plurality of resin layers laminated with each other and a thin film conductor provided between the resin layers or on the exposed surface. The thin film conductors above and below the resin layer are electrically connected to each other by a penetrating conductor penetrating the resin layer in the thickness direction (see Patent Document 1).

Japanese Unexamined Patent Publication No. 2016-72285

When the distance between pins becomes narrow due to the increase in the number of pins or the miniaturization of the semiconductor element to be inspected, it is necessary to increase the number of layers of the organic multilayer portion. When the number of layers of the organic multilayer portion is increased, the inductance of the conductor in the organic multilayer portion is increased, and the power supply impedance of the circuit board is increased. Further, since the operating voltage of the semiconductor element decreases with the miniaturization of the semiconductor element, the influence of noise increases as the power supply impedance increases. For this reason, the probe card using this circuit board deteriorates the inspection accuracy.

The circuit board of the embodiment of the present invention includes a ceramic substrate having an insulating substrate on which an insulating layer made of a ceramic material is laminated, and a wiring conductor arranged on the surface and inside of the insulating substrate.
A first organic substrate having a first resin insulating substrate on which a first resin insulating layer made of a first resin material is laminated, and a first wiring conductor arranged on the surface and inside of the first resin insulating substrate.
A second organic substrate having a second resin insulating substrate on which a second resin layer made of a second resin material is laminated, and a second wiring conductor arranged on the surface and inside of the second resin insulating substrate.
A first bonding layer for bonding the ceramic substrate and the first organic substrate,
A first connecting conductor that penetrates the first bonding layer and electrically connects the wiring conductor and the first wiring conductor.
A second bonding layer for bonding the first organic substrate and the second organic substrate,
A second connecting conductor that penetrates the second bonding layer and electrically connects the first wiring conductor and the second wiring conductor is provided.
The second wiring conductor includes a layered power supply conductor layer embedded inside the second resin insulating substrate and a layered grounding conductor layer embedded inside the second resin insulating substrate.

Further, the probe card according to the embodiment of the present invention includes the above circuit board and the probe card.
A probe pin electrically connected to the first wiring layer is provided.

According to the circuit board of the embodiment of the present invention, the layered power conductor layer embedded inside the second resin insulating substrate and the layered grounding conductor layer embedded inside the second resin insulating substrate are included. The power supply impedance can be reduced by reducing the inductance and increasing the capacitance component.

Further, according to the probe card of the embodiment of the present invention, the decrease in the power supply impedance of the circuit board can suppress the decrease in the inspection accuracy.

It is sectional drawing which shows the circuit board of this embodiment, and the probe card which includes the circuit board. It is an enlarged sectional view of the part A of the circuit board of FIG. It is an enlarged sectional view of another example of the part A of the circuit board of FIG.

The circuit board of this embodiment will be described with reference to the drawings. It should be noted that the figures used in the following description are schematic, and the distinction between the upper and lower parts is for convenience of explanation and does not regulate the upper and lower parts when the circuit board or the like is actually used.

FIG. 1 is a cross-sectional view showing a circuit board and a probe card of the present embodiment. The circuit board 1 of the present embodiment is configured by laminating a ceramic substrate 2, a first organic substrate 3, and a second organic substrate 4 in this order. The ceramic substrate 2 and the first organic substrate 3 are bonded by the first bonding layer 5, and the first organic substrate 3 and the second organic substrate 4 are bonded by the second bonding layer 6.

The ceramic substrate 2 has a flat plate shape such as a square plate shape, and has an insulating substrate 20 in which insulating layers 20a (ceramic insulating layer 20a) made of a plurality of ceramic materials are laminated on each other, and a surface from the upper surface to the lower surface of the insulating substrate 20. And a wiring conductor 21 disposed inside. In the present embodiment, the wiring conductor 21 includes an inner layer wiring conductor 22 provided between layers of the ceramic insulating layer 20a, a penetrating conductor 23 penetrating the ceramic insulating layer 20a in the thickness direction, and a surface (upper surface) of the insulating base 20. And a surface wiring conductor 24 provided on the lower surface).

The first organic substrate 3 has a flat plate shape such as a quadrangular plate shape, and is a first organic insulating substrate 30 composed of a plurality of first resin insulating layers 30a laminated on each other, and an upper surface to a lower surface of the first organic insulating substrate 30. It includes a first wiring conductor 31 arranged on the surface and inside of the wire. In the present embodiment, the first wiring conductor 31 includes a thin film conductor 32 provided at a predetermined portion between layers of the first resin insulating layer 30a and a penetrating conductor 33 penetrating the first resin insulating layer 30a in the thickness direction. ,have.

The ceramic substrate 2 and the first organic substrate 3 have an upper surface of the ceramic substrate 2 and a lower surface of the first organic substrate 3 bonded by a first bonding layer 5. The wiring conductor 21 of the ceramic substrate 2 and the first wiring conductor 31 of the first organic substrate 3 are electrically connected by a first connecting conductor 7 penetrating the first bonding layer 5. In the present embodiment, the surface wiring conductor 24 of the ceramic substrate 2 and the through conductor 33 of the first organic substrate 3 are connected by the first connecting conductor 7.

The second organic substrate 4 has a flat plate shape such as a quadrangular plate shape, and is formed from a second resin insulating substrate 40 composed of a plurality of second resin insulating layers 40a laminated on each other and an upper surface of the second organic resin insulating substrate 40. A second wiring conductor 41 arranged on the surface and inside over the lower surface. In the present embodiment, the second wiring conductor 41 includes a thin film conductor 42 provided at a predetermined portion between layers of the second resin insulating layer 40a and a penetrating conductor 43 penetrating the second resin insulating layer 40a in the thickness direction. ,have. Further, in the present embodiment, in the second wiring conductor 41, a layered power supply conductor layer 44 and a layered ground conductor layer 45 are embedded between the layers of the second resin insulating layer 40a. The power supply conductor layer 44 and the ground conductor layer 45 may be embedded in the same layer or may be embedded in different layers as long as they are electrically insulated. A plurality of power conductor layers 44 may be embedded between different layers, and a plurality of ground conductor layers 45 may be embedded between different layers.

In the first organic substrate 3 and the second organic substrate 4, the upper surface of the first organic substrate 3 and the lower surface of the second organic substrate 4 are bonded by a second bonding layer 6. The first wiring conductor 31 of the first organic substrate 3 and the second wiring conductor 41 of the second organic substrate 4 are electrically connected by a second connecting conductor 8 penetrating the second bonding layer 6. In the present embodiment, the thin film conductor 32 of the first organic substrate 3 and the thin film conductor 42 of the second organic substrate 4 are connected by the second connecting conductor 8.

A connection terminal 9 is arranged on the surface (upper surface) of the second organic substrate 4. The connection terminals 9 are arranged at a narrower terminal pitch (narrower pitch) than the first organic substrate 3 so as to correspond to the input / output terminals of the semiconductor element to be inspected. Further, a probe pin 10 is bonded to the connection terminal 9 so as to easily come into contact with the input / output terminal of the semiconductor element.

The surface wiring conductor 24 arranged on the surface (lower surface) of the ceramic substrate 2 is connected to, for example, an input / output terminal of the mounting substrate in order to connect to an external circuit. The input / output terminals on the mounting board and the like have a relatively wide terminal pitch, and the corresponding surface wiring conductor 24 is also provided with a wide pitch. The circuit board 1 is electrically connected from the connection terminal 9 to the surface wiring conductor 24, and the semiconductor element in contact with the probe pin 10 and the external circuit for inspection are electrically connected to form a circuit of the semiconductor element. Various inspections such as the presence or absence of malfunctions related to the above are performed.

In this case, the semiconductor element is temporarily placed on the upper surface of the circuit board for electrical inspection. The semiconductor element is, for example, a semiconductor integrated circuit element such as an IC (Integrated Circuit) or an LSI (Large Scale Integration), or a micromachine (so-called MEMS (Micro Electro Mechanical)) in which a minute electromechanical mechanism is formed on the surface of a semiconductor substrate. Systems) element) and the like.

The ceramic substrate 2 has, for example, a function of ensuring the overall rigidity of the circuit board 1. The ceramic substrate 2 enhances the rigidity of the circuit board 1, and suppresses deformation when, for example, it is used as a probe card substrate and pressed against a semiconductor element (not shown) for inspection.

The ceramic substrate 2 has, for example, a polygonal or circular plate shape as a whole in a plan view. In this case, the plurality of ceramic insulating layers 20a are formed in a plate shape having the same shape and dimensions. The dimensions of the ceramic substrate 2 in a plan view are appropriately set according to the dimensions of the semiconductor element to be inspected in a plan view when used as a probe card substrate, for example.

The plurality of ceramic insulating layers 20a constituting the ceramic substrate 2 are made of a ceramic material such as an aluminum oxide sintered body, an aluminum nitride material sintered body, a silicon carbide sintered body, a mulite sintered body, or glass ceramics. ..

The thickness and number of layers of the ceramic insulating layer 20a are, for example, electrical conditions such as the total number and positions of arrangements of the inner layer wiring conductor 22, the through conductor 23, and the surface wiring conductor 24, desired rigidity and economic efficiency of the ceramic substrate 2, and the like. It is appropriately set according to various conditions.

Further, the wiring conductor 21 is made of, for example, a metal material such as tungsten, molybdenum, manganese or copper, or an alloy material of these metal materials. These metal materials (alloy materials) are adhered to the exposed surface or the inside of the ceramic substrate 2 by, for example, a metallizing method or a plating method.

The first organic substrate 3 and the second organic substrate 4 are portions for providing connection terminals 9 in a fine pattern on the ceramic substrate 2. Since the surface roughness of the surface of the second organic substrate 4 provided with the connection terminal 9 is smaller than the surface roughness of the ceramic substrate 2, the connection terminal 9 is formed in a fine pattern by a thin film forming technique. Is easy. This makes it possible to form fine connection terminals 9.

In order to extend the wiring pitch of the ceramic substrate 2 by increasing the number of terminals of the input / output terminals of the semiconductor element and narrowing the terminal pitch, the wiring width of the first organic substrate 3 and the second organic substrate 4 should be reduced. , It is necessary to increase the number of layers, which causes an increase in the inductance of the wiring conductor and increases the power supply impedance. In order to suppress the increase in the power supply impedance, the capacitance component may be increased. In the present embodiment, the second organic substrate 4 is provided with the layered power supply conductor layer 44 and the layered ground conductor layer 45. The layered conductor layer is a so-called solid layer, and is, for example, a conductor layer provided between the second resin insulating layers 40a in a region other than the region where the thin film conductor 42 is arranged. By providing the layered power supply conductor layer 44 and the layered ground conductor layer 45 in the second organic substrate 4, the first organic substrate 3 is compared with the first organic substrate 3 and the second organic substrate 4. The second organic substrate 4 has a higher content of the conductor layer as a whole, that is, a higher content of the metal material than that of the second organic substrate 4. As a result, the coefficient of thermal expansion of the second organic substrate 4 becomes larger as a whole. When the first organic substrate 3 and the second organic substrate 4 are integrated into one organic substrate, the portion corresponding to the first organic substrate 3 and the second organic substrate 4 are formed due to the difference in the coefficient of thermal expansion when the temperature changes. Peeling, disconnection, etc. will occur between the corresponding portion.

In the present embodiment, as described above, the first organic substrate 3 having a high content of the metal material and the second organic substrate 4 having a low content of the metal material are separated from each other, and the first organic substrate 3 and the second organic substrate 3 are separated. By joining the substrate 4 with the second bonding layer 6, peeling and disconnection due to the difference in the coefficient of thermal expansion are suppressed. Further, by dividing the multilayer organic substrate into two, a first organic substrate 3 and a second organic substrate 4, the first organic substrate 3 and the second organic substrate 4 having a relatively small number of layers are individually arranged in parallel. Since it can be manufactured, the time required for manufacturing the circuit board 1 can be shortened.

A layered power supply conductor layer and a layered ground conductor layer may be provided on the first organic substrate 3, but when the sum of the areas or the sums of the volumes of the conductor layers is compared in consideration of suppressing the increase in the power supply impedance. , The second organic substrate 4 may be larger than the first organic substrate 3.

The first resin material constituting the first resin insulating layer 30a is, for example, a polyimide resin, a polyamideimide resin, a siloxane-modified polyamideimide resin, a siloxane-modified polyimide resin, a polyphenylene sulfide resin, a total aromatic polyester resin, and BCB (benzocyclobutene). ) Resin, epoxy resin, bismaleimide triazine resin, polyphenylene ether resin, polyquinoline resin, fluororesin and the like can be used.

As the second resin material constituting the second resin insulating layer 40a, the same resin as the first resin material can be used as described above. The first resin material and the second resin material may use the same type of resin or different types of resin.

The first resin insulating layer 30a and the second resin insulating layer 40a may be a plurality of layers, and may include, for example, a base material layer and an adhesive layer. The base material layer is a part that secures mechanical strength. As the base material layer, the same resin material as described above can be used. As the adhesive layer, a resin adhesive such as a siloxane-modified polyamideimide resin, a siloxane-modified polyimide resin, a polyimide resin, a bismaleimide triazine resin, an epoxy resin, or a polyphenylene ether resin can be used. By alternately laminating the base material layer and the adhesive layer, the first organic substrate 3 on which the first resin insulating layer 30a is laminated and the second organic substrate 4 on which the second resin insulating layer 40a is laminated are formed. be able to.

As described above, the second organic substrate 4 has a larger coefficient of thermal expansion as a whole than the first organic substrate 3, and the first organic substrate 3 and the second organic substrate 4 are separated from each other when the temperature changes. , Will cause disconnection. If the coefficient of thermal expansion of the second resin material is made smaller than the coefficient of thermal expansion of the first resin material in addition to the bonding by the second bonding layer 6, the difference in the coefficient of thermal expansion due to the content of the metal material can be reduced. It is preferable because it can be done. For example, when the first resin insulating layer 30a and the second resin insulating layer 40a are composed of a plurality of layers (in this example, two layers of a base material layer and an adhesive layer), the adhesive layer is made of the same resin material and the resin of the base material layer is used. The material may be a material having a different coefficient of thermal expansion. As an example, the thermal expansion coefficient of the base material layer of the second resin insulating layer 40a and 20 × ^{10 -6} / ℃ above, the thermal expansion coefficient of the base material layer of the first resin insulating layer 30a 20 × ^{10 -6} / It shall be less than ℃. When the base material layer is made of a polyimide resin, the higher the linearity of the main chain structure, the smaller the thermal expansion coefficient. Therefore, the polyimide resin of the base material layer of the second resin insulating layer 40a is the first resin insulating layer 30a. A resin having a higher linearity of the main chain structure than the polyimide resin of the base material layer may be used.

The first wiring conductor 31 arranged on the first organic substrate 3 and the second wiring conductor 41 arranged on the second organic substrate 4 may be manufactured as follows, for example. A resist film having openings corresponding to through holes and a conductor layer is formed in the first resin insulating layer 30a or the second resin insulating layer 40a, and the first resin insulating layer 30a or the second resin located at the openings of the resist film is formed. A recess corresponding to the thin film conductor 32 is formed by etching the insulating layer 40a. Then, a laser is used to remove the first resin insulating layer 30a corresponding to the through conductor 33.

Next, by a thin film forming method such as a thin film deposition method, a sputtering method, or an ion plating method, a thickness of about 0.1 μm to 3 μm, for example, chromium (Cr) -copper, is formed in the recesses to be the through conductor 33 and the thin film conductor 32. A base conductor layer composed of a (Cu) alloy layer or a titanium (Ti) -copper (Cu) alloy layer is formed. Next, the recess is filled with a metal having a small electric resistance such as copper or gold by plating or the like. The through conductor 33 and the thin film conductor 32 can be formed by peeling off the resist and removing the raised metal by polishing or the like. The second wiring conductor 41 of the second organic substrate 4 can be manufactured in the same manner.

As the first bonding layer 5 for bonding the first organic substrate 3 and the ceramic substrate 2, for example, a polyetheretherketone (PEEK) resin, a modified epoxy resin, a polyphenylene ether resin, or the like can be used. The coefficient of thermal expansion differs between the first organic substrate 3 and the ceramic substrate 2, and peeling or the like occurs between the first organic substrate 3 and the ceramic substrate 2 when the temperature changes. Since the first bonding layer 5 is made of the above-mentioned material, it is possible to absorb the difference in the coefficient of thermal expansion and suppress the occurrence of peeling and the like.

As the second bonding layer 6 for bonding the first organic substrate 3 and the second organic substrate 4, for example, the same resin as the first bonding layer 5 described above can be used. The first organic substrate 3 and the second organic substrate 4 also have different coefficients of thermal expansion, which causes peeling between the first organic substrate 3 and the ceramic substrate 2 when the temperature changes. Since the second bonding layer 6 is made of the above-mentioned material, it is possible to absorb the difference in the coefficient of thermal expansion and suppress the occurrence of peeling and the like. The thickness of the first bonding layer 5 and the second bonding layer 6 is not limited as long as the two substrates can be bonded.

A first connecting conductor 7 connecting the wiring conductor 21 of the ceramic substrate 2 and the first wiring conductor 31 of the first organic substrate 3, the first wiring conductor 31 of the first organic substrate 3, and the second organic substrate 4. The second connecting conductor 8 for connecting to the second wiring conductor 41 may use a metal material such as copper or gold like the first wiring conductor 31 and the second wiring conductor 41, and is a relatively soft alloy such as solder. Materials may be used. As described above, the first bonding layer 5 and the second bonding layer 6 have a buffer function of absorbing the difference in the coefficient of thermal expansion between the substrates to be bonded. By using solder for the first connecting conductor 7 and the second connecting conductor 8 that electrically connect the substrates, the buffering function of the first joining layer 5 and the second joining layer 6 can be made effective. ..

Examples of the solder include lead-free solder such as tin-silver solder, tin-silver-copper solder, and tin-silver-copper-bismuth-indium solder. The first connecting conductor 7 and the second connecting conductor 8 may use the same type of solder or different types of solder. Solder is an alloy in which a plurality of metals are combined, and even if the metal type is the same, the characteristics differ depending on the content ratio of each metal. For example, in tin-silver-copper-bismuth-indium solder, the metallization constituting the alloy is divided into silver and copper which are high melting point metal components and tin, bismuth and indium which are low melting point metal components.

The solder (first solder) used for the first connecting conductor 7 that electrically connects the ceramic substrate 2 and the first organic substrate 3, and the second that electrically connects the first organic substrate 3 and the second organic substrate 4. The ratio of the high melting point metal component to the low melting point metal component is different from that of the solder used for the two connecting conductor 8 (second solder). Specifically, the second solder has a larger proportion of the refractory metal component than the first solder. When connected using solder, some low melting point metal components diffuse to the substrate during reflow. Diffusion of the metal component lowers the insulation around the solder connection part and causes a short circuit between the wiring conductors, or when the wiring conductor is copper, the tin of the low melting point metal component diffuses and the fragile tin-copper alloy is formed. It is formed and causes disconnection. Since the second solder connects the first organic substrate 3 and the second organic substrate 4, there is a high possibility that copper is used for the wiring conductor in both cases, and a tin-copper alloy is formed. Further, since the second organic substrate 4 has the narrowest pitch among the ceramic substrate 2, the first organic substrate 3, and the second organic substrate 4, there is a high possibility of causing a short circuit between the wiring conductors. In order to suppress such a defect, the second solder has a larger proportion of the high melting point metal component than the first solder, and suppresses the diffusion of the low melting point metal component from the second solder.

As a manufacturing method, the ceramic substrate 2, the first organic substrate 3, and the second organic substrate 4 are individually manufactured by a known method in advance, and first, the first organic substrate 3 and the second organic substrate 4 are manufactured. The second connecting conductor 8 using the second solder is used for connecting, and the second bonding layer 6 is used for joining both substrates. After that, both the bonded substrates and the ceramic substrate 2 are connected by the first connecting conductor 7 using the first solder and joined by the first bonding layer 5. In such a manufacturing method, in the present embodiment, the second connecting conductor 8 using the second solder is heated twice by the two joining steps. As described above, the second solder has a high melting point because the proportion of the refractory metal component is large, and the first solder has a low melting point because the proportion of the refractory metal component is small. That is, in the present embodiment, the first organic substrate 3 and the second organic substrate 4 are bonded by the second solder having a high melting point in the first bonding step, and then the first organic substrate 4 having a low melting point is bonded in the second bonding step. Both organic substrates and the ceramic substrate 2 are joined by soldering. Since the first solder having a low melting point is used in the second joining step, the already joined second solder can maintain the joined state even in the second joining step.

When a relatively soft material such as solder as described above is used as the first connecting conductor 7 and the second connecting conductor 8, the buffering function of the first joining layer 5 and the second joining layer 6 is effective. be able to. The volume of the first connecting conductor 7 connecting the ceramic substrate 2 and the first organic substrate 3 is made larger than the volume of the second connecting conductor 8 connecting the first organic substrate 3 and the second organic substrate 4. The larger the volume, the more effective the buffer function of the connector, such as allowing greater deformation. The difference in the coefficient of thermal expansion is larger between the ceramic substrate 2 and the first organic substrate 3 than between the first organic substrate 3 and the second organic substrate 4. To fill this difference, the volume of the first connecting conductor 7 that connects the ceramic substrate 2 and the first organic substrate 3 having a large difference in the coefficient of thermal expansion is connected to the first organic substrate 3 and the second organic substrate 4. It is made larger than the volume of the second connecting conductor 8.

The large volume means that, for example, when the first connecting conductor 7 and the second connecting conductor 8 have the same bottom area, the height of the first connecting conductor 7 is increased. Further, for example, when the first connecting conductor 7 and the second connecting conductor 8 have the same height, the bottom area of the first connecting conductor 7 is increased. Further, the height of the first connecting conductor 7 may be increased and the bottom area may be increased. Further, if the volume of the first connecting conductor 7 is large, the second connecting conductor 8 may increase one of the height and the bottom area, and the first connecting conductor 7 may increase the other.

FIG. 2 is an enlarged cross-sectional view showing a portion A of the circuit board of FIG. A part of the first connecting conductor 7 may protrude from the first bonding layer 5 to the first resin insulating layer 30a. The connection point between the first connecting conductor 7 and the through conductor 33 is located on the inner side of the first resin insulating layer 30 with respect to the interface between the first bonding layer 5 and the first resin insulating layer 30a. As a result, the bonding interface between the first connecting conductor 7 and the through conductor 33 and the bonding interface between the first bonding layer 5 and the first resin insulating layer 30 are not in the same plane, so that the first connection due to thermal stress is applied. The possibility of breakage at the junction interface between the conductor 7 and the through conductor 33 can be further reduced.

FIG. 3 is an enlarged cross-sectional view showing another example of the A portion of the circuit board of FIG. The first connecting conductor 7A further protrudes from the first bonding layer 5 to the first resin insulating layer 30a, and the thin film conductor 32 and the surface wiring conductor 24 are connected by the first connecting conductor 7A without providing the through conductor 33. It is connected. By further increasing the volume of the first connecting conductor 7A, the buffer function can be made more effective. Since the first connecting conductor 7A can be increased without changing the thickness of the first bonding layer 5, the cushioning function can be further made effective without lowering the rigidity of the circuit board 1 as a whole. ..

1 Circuit board 2 Ceramic substrate 3 1st organic substrate 4 2nd organic substrate 5 1st junction layer 6 2nd junction layer 7, 7A 1st connection conductor 8 2nd connection conductor 9 Connection terminal 10 Probe pin 20 Insulation substrate 20a Insulation layer (Ceramic insulation layer)
21 Wiring conductor 22 Inner layer wiring conductor 23 Through conductor 24 Surface wiring conductor 30 1st resin insulating base 30a 1st resin insulating layer 31 1st wiring conductor 32 Thin film conductor 33 Through conductor 40 2nd resin insulating base 40a 2nd resin insulating layer 41 Second wiring conductor 42 Thin-film conductor 43 Through conductor 44 Power conductor layer 45 Ground conductor layer

Claims (4)

A ceramic substrate having an insulating substrate on which an insulating layer made of a ceramic material is laminated, and wiring conductors arranged on the surface and inside of the insulating substrate, and
A first organic substrate having a first resin insulating substrate on which a first resin insulating layer made of a first resin material is laminated, and a first wiring conductor arranged on the surface and inside of the first resin insulating substrate.
A second organic substrate having a second resin insulating substrate on which a second resin layer made of a second resin material is laminated, and a second wiring conductor arranged on the surface and inside of the second resin insulating substrate.
A first bonding layer for bonding the ceramic substrate and the first organic substrate,
A first connecting conductor that penetrates the first bonding layer and electrically connects the wiring conductor and the first wiring conductor.
A second bonding layer for bonding the first organic substrate and the second organic substrate,
A second connecting conductor that penetrates the second bonding layer and electrically connects the first wiring conductor and the second wiring conductor is provided.
The second wiring conductor, viewed contains a ground conductor layer of the layered embedded inside of the second resin insulating substrate inside buried power supply conductor layer and the second resin insulating substrate layered,
A circuit board in which the coefficient of thermal expansion of the second resin material is smaller than the coefficient of thermal expansion of the first resin material. The circuit board according to claim 1, wherein the volume of the first connecting conductor is larger than the volume of the second connecting conductor. The first connecting conductor and the second connecting conductor are made of solder containing a low melting point metal component and a high melting point metal component.
The circuit board according to claim 1 or 2 , wherein the ratio of the refractory metal component to the low melting point metal component in the solder is larger in the second connecting conductor than in the first connecting conductor. The circuit board according to any one of claims 1 to 3.
A probe card comprising a probe pin electrically connected to the second wiring conductor.

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