JP6843533B2 - Film deposition equipment and control method of film deposition equipment - Google Patents

Film deposition equipment and control method of film deposition equipment Download PDF

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JP6843533B2
JP6843533B2 JP2016131736A JP2016131736A JP6843533B2 JP 6843533 B2 JP6843533 B2 JP 6843533B2 JP 2016131736 A JP2016131736 A JP 2016131736A JP 2016131736 A JP2016131736 A JP 2016131736A JP 6843533 B2 JP6843533 B2 JP 6843533B2
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substrate
pressing portion
support
pressing
film
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JP2018003096A (en
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信朗 塩入
信朗 塩入
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Canon Tokki Corp
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Canon Tokki Corp
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Priority to KR1020170075926A priority patent/KR102264459B1/en
Priority to CN201710518669.3A priority patent/CN107557747B/en
Publication of JP2018003096A publication Critical patent/JP2018003096A/en
Priority to JP2021027154A priority patent/JP2021101471A/en
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Priority to KR1020210073416A priority patent/KR102355444B1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping

Description

本発明は、成膜装置及び成膜装置の制御方法に関するものである。 The present invention relates to a film forming apparatus and a method for controlling the film forming apparatus.

例えば、特許文献１に開示されるような、クランプ部材を基板に押し付けて基板の外周部を挟持する基板挟持機構において、基板を挟持した状態から、クランプ部材を基板から離間させて基板を挟持しない解放状態にする際、基板に押し付けていたクランプ部材の接触面に剥離帯電が生じ、離間するクランプ部材に基板が貼り付いてしまう場合がある。 For example, in a substrate sandwiching mechanism for pressing a clamp member against a substrate and sandwiching an outer peripheral portion of the substrate as disclosed in Patent Document 1, the clamp member is separated from the substrate and the substrate is not sandwiched from the state where the substrate is sandwiched. In the released state, peeling charging may occur on the contact surface of the clamp member pressed against the substrate, and the substrate may stick to the separated clamp member.

この場合、基板の落下や破損のおそれがあることから、剥離帯電が生じない構成が要望されている。 In this case, since there is a risk of the substrate falling or being damaged, a configuration in which peeling charging does not occur is desired.

特開２００６−１７２９３０号公報Japanese Unexamined Patent Publication No. 2006-172930

本発明は、上述のような現状に鑑みなされたもので、基板を押圧具に貼り付かせることなく、挟持状態から解放状態に移行できる成膜装置及び成膜装置の制御方法を提供するものである。 The present invention has been made in view of the current situation as described above, and provides a film forming apparatus and a control method for a film forming apparatus capable of shifting from a pinched state to an released state without sticking a substrate to a pressing tool. is there.

基板の成膜面側に配され当該基板の第１の辺の近傍を支持する第１の支持具と、前記成膜面側に配され当該基板の前記第１の辺と対向する第２の辺の近傍を支持する第２の支持具と、前記基板に対して前記成膜面側に設けられた蒸発源と、前記基板の前記成膜面と反対の面側に設けられ前記第１の支持具と対向する位置で前記基板を前記第１の支持具に対して押圧する第１の押圧具と、前記第２の支持具と対向する位置で前記基板を前記第２の支持具に対して押圧する第２の押圧具と、を備える成膜装置において、
前記第１の押圧具および前記第２の押圧具は、大押圧部と、該大押圧部よりも前記基板との接触面積が小さい小押圧部と、を有し、前記第１の押圧具および前記第２の押圧具を前記基板から離間すると、前記大押圧部が前記基板から離間した後に前記小押圧部が前記基板から離間することを特徴とする成膜装置に係るものである。
A first support that is arranged on the film-forming surface side of the substrate and supports the vicinity of the first side of the substrate, and a second support that is arranged on the film-forming surface side and faces the first side of the substrate. A second support that supports the vicinity of the side, an evaporation source provided on the film-forming surface side of the substrate, and the first one provided on the surface side of the substrate opposite to the film-forming surface. The first pressing tool that presses the substrate against the first support at a position facing the support, and the substrate against the second support at a position facing the second support. In a film forming apparatus including a second pressing tool for pressing
The first pressing member and said second pressing member includes a large-pressing portion, anda small pressing portion small contact area with the substrate than the large pressing portion, the first pusher and The present invention relates to a film forming apparatus characterized in that when the second pressing tool is separated from the substrate, the small pressing portion is separated from the substrate after the large pressing portion is separated from the substrate.

本発明は上述のように構成したから、基板を押圧具に貼り付かせることなく、挟持状態から解放状態に移行できる成膜装置及び成膜装置の制御方法となる。 The invention because configured as described above, without stick the substrate pusher, a control method of migrating can Ru film forming apparatus in a released state from pinching state and a film forming apparatus.

本実施例の概略説明断面図である。It is schematic explanatory sectional drawing of this Example. 本実施例の工程概略説明図である。It is a process schematic explanatory drawing of this Example. 本実施例の工程概略説明図である。It is a process schematic explanatory drawing of this Example. 本実施例の工程概略説明図である。It is a process schematic explanatory drawing of this Example.

好適と考える本発明の実施形態を、図面に基づいて本発明の作用を示して簡単に説明する。 Embodiments of the present invention which are considered to be suitable will be briefly described by showing the operation of the present invention based on the drawings.

支持具２に支持された基板１を押圧具３で押圧することで基板１を挟持した挟持状態から、大押圧部４を離間させて大押圧部４による押圧を解除する際、基板１側に付勢される小押圧部５が大押圧部４の基板１との接触面から基板１側に突出して基板１を押圧することで、基板１が離間しようとする大押圧部４に貼り付くことを防止できる。 When the substrate 1 supported by the support tool 2 is pressed by the pressing tool 3 to release the pressing by the large pressing portion 4 by separating the large pressing portion 4 from the sandwiched state in which the substrate 1 is sandwiched, the substrate 1 is moved to the substrate 1 side. The urged small pressing portion 5 projects toward the substrate 1 from the contact surface of the large pressing portion 4 with the substrate 1 and presses the substrate 1, so that the substrate 1 is attached to the large pressing portion 4 that is about to be separated. Can be prevented.

そして、大押圧部４が基板１から離間した後、小押圧部５を基板１から離間させることで、剥離帯電による基板１の貼り付きを生じさせることなく、解放状態に移行することが可能となる。ここで、小押圧部５は、大押圧部４が離間する際の基板１の貼り付きを防止できれば良く、ごく小さい接触面積を有する例えばピン形状で良いから、小押圧部５を基板１に貼り付かない構成とすることは容易である。 Then, after the large pressing portion 4 is separated from the substrate 1, the small pressing portion 5 is separated from the substrate 1, so that it is possible to shift to the released state without causing the substrate 1 to stick due to peeling charge. Become. Here, the small pressing portion 5 only needs to be able to prevent the substrate 1 from sticking when the large pressing portion 4 is separated, and may have a very small contact area, for example, a pin shape. Therefore, the small pressing portion 5 is attached to the substrate 1. It is easy to make a configuration without it.

本発明の具体的な実施例について図面に基づいて説明する。 Specific examples of the present invention will be described with reference to the drawings.

本実施例は、図１に図示したように、真空槽７内に、基板１とマスク８とを配置して蒸発源９等から成る成膜機構を用いて成膜を行う成膜装置に本発明を適用した例である。この成膜装置には、蒸発源９から射出された蒸発粒子の蒸発レートをモニタする膜厚モニタ、真空槽７外に設けたモニタした蒸発粒子の量を膜厚に換算する膜厚計、換算された膜厚が所望の膜厚になるように成膜材料の蒸発レートを制御するために蒸発源９を加熱するヒータ用電源等が設けられる。この成膜装置は、例えば、有機エレクトロルミネッセンス表示装置のための表示パネルの製造に用いられる。 As shown in FIG. 1, this embodiment is applied to a film forming apparatus in which a substrate 1 and a mask 8 are arranged in a vacuum chamber 7 and a film forming mechanism is used to form a film using an evaporation source 9 or the like. This is an example in which the invention is applied. This film forming apparatus includes a film thickness monitor that monitors the evaporation rate of the evaporated particles ejected from the evaporation source 9, a film thickness meter that converts the amount of the monitored evaporated particles provided outside the vacuum chamber 7 into a film thickness, and a conversion. A heater power supply or the like for heating the evaporation source 9 is provided in order to control the evaporation rate of the film-forming material so that the film thickness is a desired film thickness. This film forming apparatus is used, for example, in manufacturing a display panel for an organic electroluminescence display apparatus.

具体的には、真空槽７には、マスク８がマスク支持体10に支持された状態で配置され、このマスク８と基板１との相対距離を変化させる移動機構18が設けられている。 Specifically, the vacuum chamber 7 is provided with a moving mechanism 18 in which the mask 8 is arranged while being supported by the mask support 10 and the relative distance between the mask 8 and the substrate 1 is changed.

移動機構18は、その固定部が真空槽７の壁面に取り付けられ、真空槽７の壁面に対して接離移動するように固定部に進退自在に設けられた移動部の先端部に基板支持体11が設けられている。従って、移動部を進退移動させることで、基板支持体11に支持された基板１がマスク８に対して接離移動する。 The moving mechanism 18 has a fixed portion attached to the wall surface of the vacuum chamber 7, and a substrate support is provided at the tip of the moving portion provided so as to move in contact with and detached from the wall surface of the vacuum chamber 7. 11 is provided. Therefore, by moving the moving portion forward and backward, the substrate 1 supported by the substrate support 11 moves in contact with the mask 8.

基板支持体11には、基板１の下面外周部と接触して基板１を支持する支持具２と、この支持具２と対向配置され、即ち、基板１を挟むように基板１の上面側に設けられ基板１を支持具２に押圧する押圧具３とを備えている。 The substrate support 11 has a support 2 that comes into contact with the outer peripheral portion of the lower surface of the substrate 1 to support the substrate 1 and is arranged to face the support 2, that is, on the upper surface side of the substrate 1 so as to sandwich the substrate 1. It is provided with a pressing tool 3 that presses the substrate 1 against the support tool 2.

また、基板支持体11は、胴部の左右に袖部が垂設された断面視略コ字状体であり、袖部の先端から内方に突出するように支持具２が設けられている。また、この支持具２に夫々対向するように押圧具３が突没自在に設けられた基部12が設けられている。 The substrate support 11 is a substantially U-shaped cross-sectional view in which sleeves are vertically provided on the left and right sides of the body, and a support 2 is provided so as to project inward from the tip of the sleeve. .. Further, a base portion 12 is provided so that the pressing tool 3 is provided so as to face the support tool 2 so as to be opposed to each other.

押圧具３は、基部12から突出して基板１を支持具２に押し付けることで基板１を挟持するように構成されている。この支持具２及び押圧具３により、押圧具３を基板１に押圧した挟持状態と、基板１から押圧具３を後退させて基板１を挟持しない解放状態とに適宜切り替えることが可能となる。 The pressing tool 3 is configured to sandwich the substrate 1 by projecting from the base portion 12 and pressing the substrate 1 against the supporting tool 2. With the support 2 and the pressing tool 3, it is possible to appropriately switch between a holding state in which the pressing tool 3 is pressed against the substrate 1 and an released state in which the pressing tool 3 is retracted from the substrate 1 and the substrate 1 is not sandwiched.

支持具２及び押圧具３は、基板１の複数の辺部に当接するように複数設けられている。本実施例では、支持具２及び押圧具３は基板１の対向する一対の辺部に当接するように一対設けられている。 A plurality of supports 2 and pressing tools 3 are provided so as to come into contact with a plurality of side portions of the substrate 1. In this embodiment, the support tool 2 and the pressing tool 3 are provided in pairs so as to abut against the pair of facing side portions of the substrate 1.

また、本実施例では、１つの辺部に対して当該辺部の長手方向略全体に当接するように前記一対の支持具２及び押圧具３が夫々構成されている。なお、１つの辺部に対して複数の支持具２及び押圧具３を設けて１つの辺部を多数点で支持及び挟持する構成としても良い。また、基板１の角部を複数箇所挟持する構成としても良い。 Further, in the present embodiment, the pair of supporters 2 and pressing tools 3 are respectively configured so as to abut one side portion on substantially the entire longitudinal direction of the side portion. It should be noted that a plurality of supporters 2 and pressing tools 3 may be provided on one side portion to support and sandwich one side portion at a large number of points. Further, the configuration may be such that the corner portions of the substrate 1 are sandwiched at a plurality of locations.

押圧具３には、図２〜４に図示したように、大押圧部４と、この大押圧部４より基板１との接触面積が小さい小押圧部５とが設けられている。小押圧部５は基板１の大押圧部４への張り付きを防止できれば良く、小押圧部５の接触面積は、大押圧部４の接触面積の１％以下となるように設定されている。 As shown in FIGS. 2 to 4, the pressing tool 3 is provided with a large pressing portion 4 and a small pressing portion 5 having a smaller contact area with the substrate 1 than the large pressing portion 4. The small pressing portion 5 only needs to be able to prevent the substrate 1 from sticking to the large pressing portion 4, and the contact area of the small pressing portion 5 is set to be 1% or less of the contact area of the large pressing portion 4.

前記小押圧部５は、前記大押圧部４の前記基板１の押圧領域の内側を押圧するようにこの大押圧部４に設けられている。具体的には、大押圧部４の基板１との接触面に、小押圧部５が突没自在に設けられている。 The small pressing portion 5 is provided on the large pressing portion 4 so as to press the inside of the pressing region of the substrate 1 of the large pressing portion 4. Specifically, the small pressing portion 5 is provided on the contact surface of the large pressing portion 4 with the substrate 1 so as to be retractable.

本実施例においては、大押圧部４は基体13と、基板１との接触面を有する接触板部14とで構成されている。この大押圧部４の基体13に小押圧部５が配設される小押圧部配設孔15が設けられており、接触板部14に小押圧部５の先端部が挿通する挿通孔16が設けられている。また、小押圧部５の基端側に設けた径大部17は前記挿通孔16を挿通し得ない径に設定され、小押圧部５の脱落が防止されるように構成している。 In this embodiment, the large pressing portion 4 is composed of a substrate 13 and a contact plate portion 14 having a contact surface with the substrate 1. The base 13 of the large pressing portion 4 is provided with a small pressing portion arranging hole 15 in which the small pressing portion 5 is arranged, and the contact plate portion 14 has an insertion hole 16 through which the tip portion of the small pressing portion 5 is inserted. It is provided. Further, the large diameter portion 17 provided on the base end side of the small pressing portion 5 is set to a diameter at which the insertion hole 16 cannot be inserted, and is configured to prevent the small pressing portion 5 from falling off.

また、大押圧部４には、小押圧部５を基板１側に付勢する小押圧部付勢機構が設けられている。具体的には、押圧具３は、基板１を大押圧部４と小押圧部５とで支持具２に押圧した状態から大押圧部４を離間させてこの大押圧部４による押圧を解除する際、小押圧部５を大押圧部４の基板１との接触面から基板１側に突出させて基板１を押圧するように構成されている。 Further, the large pressing portion 4 is provided with a small pressing portion urging mechanism that urges the small pressing portion 5 toward the substrate 1. Specifically, the pressing tool 3 releases the pressing by the large pressing portion 4 by separating the large pressing portion 4 from the state in which the substrate 1 is pressed against the support by the large pressing portion 4 and the small pressing portion 5. At this time, the small pressing portion 5 is configured to protrude toward the substrate 1 from the contact surface of the large pressing portion 4 with the substrate 1 to press the substrate 1.

小押圧部付勢機構は、小押圧部５を基板１側に付勢する付勢体６（コイルスプリング）を有している。付勢体６は、小押圧部配設孔15に配設され、この付勢体６により小押圧部５は大押圧部４の接触面から基板１側に突出するように常時付勢されている。 The small pressing portion urging mechanism has an urging body 6 (coil spring) that urges the small pressing portion 5 toward the substrate 1. The urging body 6 is arranged in the small pressing portion arranging hole 15, and the small pressing portion 5 is constantly urged by the urging body 6 so as to project from the contact surface of the large pressing portion 4 toward the substrate 1. There is.

本実施例においては、付勢体６の一端側は小押圧部５側に連結され、他端側は大押圧部４側に連結されている。具体的には、付勢体６の一端が小押圧部５の基端に固定され、付勢体６の他端が大押圧部４の小押圧部配設孔15の底部に固定されている。従って、大押圧部４を基板１に対して接離移動させた際、付勢体６及び小押圧部５が大押圧部４と共に移動する。即ち、大押圧部４の基体13を移動制御することで、押圧具２全体を移動制御できる。 In this embodiment, one end side of the urging body 6 is connected to the small pressing portion 5 side, and the other end side is connected to the large pressing portion 4 side. Specifically, one end of the urging body 6 is fixed to the base end of the small pressing portion 5, and the other end of the urging body 6 is fixed to the bottom of the small pressing portion arranging hole 15 of the large pressing portion 4. .. Therefore, when the large pressing portion 4 is moved in contact with and separated from the substrate 1, the urging body 6 and the small pressing portion 5 move together with the large pressing portion 4. That is, by controlling the movement of the base 13 of the large pressing portion 4, the movement of the entire pressing tool 2 can be controlled.

本実施例においては、小押圧部５は１つの大押圧部４に１つ設ける構成としているが、複数の小押圧部５を１つの大押圧部４に設ける構成としても良い。 In this embodiment, one small pressing portion 5 is provided in one large pressing portion 4, but a plurality of small pressing portions 5 may be provided in one large pressing portion 4.

以上の構成の成膜装置において、蒸発源６を用いての成膜工程を行うに先立ち、基板１とマスク８とのアライメント工程等において行われる基板１の挟持工程及び解放工程は以下のようにして行うことができる。 In the film forming apparatus having the above configuration, prior to performing the film forming step using the evaporation source 6, the substrate 1 sandwiching step and the releasing step performed in the alignment step between the substrate 1 and the mask 8 are as follows. Can be done.

支持具２に支持された基板１を押圧具３で押圧することで基板１を挟持する際、大押圧部４を移動させることで小押圧部５も共に移動する。ここで、小押圧部５は付勢体６による付勢により、大押圧部４の基板１との接触面から突出しているため（図２）、基板１に先行して接触押圧するが（図３）、付勢体６の付勢力に抗して大押圧部４を基板１に押圧していくことで大押圧部４内に没入し、大押圧部４も基板１を押圧する（図４）。 When the substrate 1 supported by the support tool 2 is pressed by the pressing tool 3 to sandwich the substrate 1, the small pressing portion 5 is also moved by moving the large pressing portion 4. Here, since the small pressing portion 5 protrudes from the contact surface of the large pressing portion 4 with the substrate 1 due to the urging by the urging body 6 (FIG. 2), the small pressing portion 5 is contact-pressed prior to the substrate 1 (FIG. 2). 3) By pressing the large pressing portion 4 against the substrate 1 against the urging force of the urging body 6, the large pressing portion 4 is immersed in the large pressing portion 4, and the large pressing portion 4 also presses the substrate 1 (FIG. 4). ).

図４の挟持状態から、押圧具２を離間させるために大押圧部４を離間させ押圧を解除すると、付勢体６の付勢により小押圧部５が大押圧部４の基板１との接触面から突出し（図３）、基板１を支持具２側へ押し付けるため、大押圧部４への基板１の貼り付きが防止される。この状態から更に大押圧部４を基板１から離間させると小押圧部５は大押圧部の離間に伴い基板１から離間して小押圧部５による押圧も解除され、基板１が解放状態となる（図２）。 When the large pressing portion 4 is separated from the sandwiched state of FIG. 4 to release the pressing, the small pressing portion 5 comes into contact with the substrate 1 of the large pressing portion 4 due to the urging of the urging body 6. Since the substrate 1 is projected from the surface (FIG. 3) and pressed against the support 2 side, the substrate 1 is prevented from sticking to the large pressing portion 4. When the large pressing portion 4 is further separated from the substrate 1 from this state, the small pressing portion 5 is separated from the substrate 1 as the large pressing portion is separated, and the pressing by the small pressing portion 5 is also released, and the substrate 1 is released. (Fig. 2).

本発明は、本実施例に限られるものではなく、各構成要件の具体的構成は適宜設計し得るものである。 The present invention is not limited to the present embodiment, and the specific configuration of each constituent requirement can be appropriately designed.

１ 基板
２ 支持具
３ 押圧具
４ 大押圧部
５ 小押圧部
６ 付勢体
９ 蒸発源 1 Substrate 2 Support 3 Pressing tool 4 Large pressing part 5 Small pressing part 6 Biasing body
9 Evaporation source

Claims (6)

基板の成膜面側に配され当該基板の第１の辺の近傍を支持する第１の支持具と、前記成膜面側に配され当該基板の前記第１の辺と対向する第２の辺の近傍を支持する第２の支持具と、前記基板に対して前記成膜面側に設けられた蒸発源と、前記基板の前記成膜面と反対の面側に設けられ前記第１の支持具と対向する位置で前記基板を前記第１の支持具に対して押圧する第１の押圧具と、前記第２の支持具と対向する位置で前記基板を前記第２の支持具に対して押圧する第２の押圧具と、を備える成膜装置において、
前記第１の押圧具および前記第２の押圧具は、大押圧部と、該大押圧部よりも前記基板との接触面積が小さい小押圧部と、を有し、前記第１の押圧具および前記第２の押圧具を前記基板から離間すると、前記大押圧部が前記基板から離間した後に前記小押圧部が前記基板から離間することを特徴とする成膜装置。 A first support that is arranged on the film-forming surface side of the substrate and supports the vicinity of the first side of the substrate, and a second support that is arranged on the film-forming surface side and faces the first side of the substrate. A second support that supports the vicinity of the side, an evaporation source provided on the film-forming surface side of the substrate, and the first one provided on the surface side of the substrate opposite to the film-forming surface. The first pressing tool that presses the substrate against the first support at a position facing the support, and the substrate against the second support at a position facing the second support. In a film forming apparatus including a second pressing tool for pressing
The first pressing member and said second pressing member includes a large-pressing portion, anda small pressing portion small contact area with the substrate than the large pressing portion, the first pusher and A film forming apparatus characterized in that when the second pressing tool is separated from the substrate, the small pressing portion is separated from the substrate after the large pressing portion is separated from the substrate. 前記第１の押圧具の大押圧部および前記第２の押圧具の大押圧部には、それぞれ前記小押圧部を前記基板側に付勢する付勢体を有することを特徴とする請求項１に記載の成膜装置。 Wherein the first of the large pressing portion of the large pressing portion and the second pressing members of the pressing device, according to claim, characterized in that each having the small pressing portion biased body with you biased to the substrate side The film forming apparatus according to 1. 前記付勢体の一端側は前記小押圧部側に連結され、他端側は前記大押圧部側に連結されていることを特徴とする請求項２に記載の成膜装置。 The film forming apparatus according to claim 2, wherein one end side of the urging body is connected to the small pressing portion side, and the other end side is connected to the large pressing portion side. 前記小押圧部は、前記大押圧部による前記基板の押圧領域の内側を押圧するようにこの大押圧部に設けられていることを特徴とする請求項１〜３のいずれか１項に記載の成膜装置。 The method according to any one of claims 1 to 3, wherein the small pressing portion is provided on the large pressing portion so as to press the inside of the pressing region of the substrate by the large pressing portion. Film forming equipment. 前記小押圧部の接触面積は、前記大押圧部の接触面積の１％以下であることを特徴とする請求項１〜４のいずれか１項に記載の成膜装置。 The film forming apparatus according to any one of claims 1 to 4, wherein the contact area of the small pressing portion is 1% or less of the contact area of the large pressing portion. 基板の成膜面側に配され当該基板の第１の辺の近傍を支持する第１の支持具と、前記成膜面側に配され当該基板の前記第１の辺と対向する第２の辺の近傍を支持する第２の支持具と、前記基板に対して前記成膜面側に設けられた蒸発源と、前記基板の前記成膜面と反対の面側に設けられ前記第１の支持具と対向する位置で前記基板を前記第１の支持具に対して押圧する第１の押圧具と、前記第２の支持具と対向する位置で前記基板を前記第２の支持具に対して押圧する第２の押圧具と、を備え、前記第１の押圧具および前記第２の押圧具は、大押圧部と、該大押圧部よりも前記基板との接触面積が小さい小押圧部と、を有する成膜装置の制御方法において、
前記第１の支持具および前記第１の押圧具により前記基板の前記第１の辺の近傍を挟持し、前記第２の支持具および前記第２の押圧具により前記基板の前記第２の辺の近傍を挟持する挟持工程と、
前記挟持工程の後に、前記第１の押圧具および前記第２の押圧具を、前記基板から離間させる離間開始工程と、
前記離間開始工程の後に、前記大押圧部および前記小押圧部が前記基板から離間した離間終了工程と、
を備え、前記離間開始工程と前記離間終了工程との間に、前記大押圧部は前記基板から離間し、前記小押圧部は前記基板と接触する工程を有することを特徴とする成膜装置の制御方法。 A first support that is arranged on the film-forming surface side of the substrate and supports the vicinity of the first side of the substrate, and a second support that is arranged on the film-forming surface side and faces the first side of the substrate. A second support that supports the vicinity of the side, an evaporation source provided on the film-forming surface side of the substrate, and the first one provided on the surface side of the substrate opposite to the film-forming surface. The first pressing tool that presses the substrate against the first support at a position facing the support, and the substrate against the second support at a position facing the second support. The first pressing tool and the second pressing tool include a second pressing tool for pressing the large pressing tool and a small pressing portion having a smaller contact area between the large pressing portion and the substrate than the large pressing portion. In the control method of the film forming apparatus having
The vicinity of the first side of the substrate is sandwiched between the first support and the first pressing tool, and the second side of the substrate is sandwiched between the second support and the second pressing tool. The sandwiching process that sandwiches the vicinity of
After the pinching step, a separation start step of separating the first pressing tool and the second pressing tool from the substrate, and a separation start step.
After the separation start step, the separation end step in which the large pressing portion and the small pressing portion are separated from the substrate,
The film forming apparatus is characterized in that, between the separation start step and the separation end step, the large pressing portion is separated from the substrate and the small pressing portion is in contact with the substrate. Control method.
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