JP6828288B2 - Light emitting device - Google Patents

Description

The present invention relates to a light emitting device and relates to a light emitting device suitable for use as a light source of a display device or a lighting device.

Patent Document 1 discloses a light emitting device. In this light emitting device, the light emitting element is covered with a sealing layer containing a phosphor. The phosphor absorbs a part of the light emitted by the light emitting element and emits light having a different wavelength.

Japanese Unexamined Patent Publication No. 2003-51622

In the structure shown in Patent Document 1, thermal stress is generated in the sealing layer due to heat generation of the light emitting element and the phosphor. This thermal stress can cause cracks inside the sealing layer. If cracks occur in the sealing layer containing the phosphor, color unevenness and color misalignment may occur.

The present invention has been made to solve the above-mentioned problems, and an object of the present invention is to obtain a light emitting device capable of suppressing color unevenness and color deviation.

The light emitting device according to the first invention is a light emitting device including a substrate and a light emitting element provided on the upper surface of the substrate and emitting light of the first wavelength, and a first seal covering the upper surface of the substrate and the light emitting element. A plurality of the first sealing layers having a stop layer and a vertically elongated shape in a direction perpendicular to the upper surface of the substrate, and a side surface extending in a direction perpendicular to the upper surface of the substrate is in contact with the first sealing layer. A second sealing layer arranged in the region of, and at least one of the first sealing layer and the second sealing layer, which absorbs the light of the first wavelength and has a wavelength different from that of the first wavelength. The second sealing layer is provided with a phosphor that emits light, and the second sealing layer is different from the first sealing layer in thermal expansion coefficient, elastic coefficient, Young ratio or hardness, and the second sealing layer is in plan view. The second sealing layer includes a plurality of sealing layers having a polygonal cross-sectional shape, and each of the plurality of sealing layers is provided so that the side surface is not aligned with the side surface of the adjacent sealing layer . the sealing layer is arranged to be distributed over the entire said first sealing layer in plan view, Ru arranged on lattice points in a plan view.
The light emitting device according to the second invention is a light emitting device including a substrate and a light emitting element provided on the upper surface of the substrate and emitting light of the first wavelength, and a first seal covering the upper surface of the substrate and the light emitting element. A plurality of the first sealing layers having a stop layer and a vertically elongated shape in a direction perpendicular to the upper surface of the substrate, and a side surface extending in a direction perpendicular to the upper surface of the substrate is in contact with the first sealing layer. A second sealing layer arranged in the region of, and at least one of the first sealing layer and the second sealing layer, which absorbs the light of the first wavelength and has a wavelength different from that of the first wavelength. The second sealing layer is provided with a phosphor that emits light, and the second sealing layer is different from the first sealing layer in thermal expansion coefficient, elastic coefficient, Young ratio or hardness, and the second sealing layer is in plan view. The second sealing layer includes a plurality of sealing layers having a polygonal cross-sectional shape, and each of the plurality of sealing layers is provided so that the side surface is not aligned with the side surface of the adjacent sealing layer. The sealing layers are dispersed and arranged over the entire area of the first sealing layer in a plan view, and are arranged in a staggered manner in a plan view.

The light emitting device according to the present invention includes a first sealing layer and a second sealing layer. The interface between the first sealing layer and the second sealing layer has a weaker bonding force than the inside of each sealing layer. Therefore, when thermal stress is generated in the first sealing layer and the second sealing layer due to the heat generated by the light emitting element and the phosphor, cracks are likely to occur on the interface. Therefore, it is possible to limit the crack generation location to the boundary surface between the first sealing layer and the second sealing layer. Therefore, the generation of cracks inside the first sealing layer or the second sealing layer on which the phosphor is arranged is suppressed. Therefore, it is possible to suppress color unevenness and color deviation. Further, the second sealing layer is arranged in a plurality of regions of the first sealing layer. With this structure, it is possible to disperse the thermal stress as compared with the case where the second sealing layer is arranged at one place. Therefore, the occurrence of cracks is further suppressed.

FIG. 1A is a cross-sectional view of the light emitting device according to the first embodiment of the present invention. FIG. 1B is a plan view of the two-phase resin layer according to the first embodiment of the present invention. 2A to 2C are cross-sectional views of a light emitting device according to a modified example of the first embodiment of the present invention. 3A and 3B are cross-sectional views of a light emitting device according to a modification of the first embodiment of the present invention. 4A to 4D are plan views of the two-phase resin layer according to the modified example of the first embodiment of the present invention.

The light emitting device according to the embodiment of the present invention will be described with reference to the drawings. The same or corresponding components may be designated by the same reference numerals and the description may be omitted.

Embodiment 1.
FIG. 1A is a cross-sectional view of the light emitting device according to the first embodiment of the present invention. The light emitting device 100 according to the present embodiment is a chip type semiconductor light emitting device. The light emitting device 100 includes a chip substrate 10. Terminal electrodes 12 and 14 are arranged on the surface of the chip substrate 10. A reflective case 16 is arranged on the surface of the terminal electrode and the chip substrate 10. The reflective case 16 is arranged so as to surround the outer edge of the chip substrate 10. A light emitting element 20 is arranged on the surface of the terminal electrode 14. The upper surface electrode of the light emitting element 20 is connected to the terminal electrode 12 by a bonding wire 22.

The region surrounded by the reflective case 16 and the chip substrate 10 is sealed by the first sealing layer 30 and the second sealing layer 32. The first sealing layer 30 seals the inside of the reflective case 16 so as to cover the light emitting element 20. The second sealing layer 32 is arranged in a plurality of regions inside the first sealing layer 30. In the present embodiment, the second sealing layer 32 has a vertically elongated shape in a direction parallel to the light emitting direction of the light emitting device 100. Here, the light emitting direction of the light emitting device 100 is a direction perpendicular to the surface of the chip substrate 10.

The first sealing layer 30 and the second sealing layer 32 are formed of a translucent resin. The first sealing layer 30 and the second sealing layer 32 form a two-phase resin layer 60. The first sealing layer 30 and the second sealing layer 32 are made of materials having different coefficients of thermal expansion. For the first sealing layer 30 and the second sealing layer 32, epoxy resin, urea resin, silicone resin, modified epoxy resin, modified silicone resin, and polyamide, which are transparent resins having excellent weather resistance, can be used. Further, by using an epoxy resin, a silicone resin, or a material combining them, it is possible to suppress joint failure between members due to thermal shock. Alternatively, glass may be used for the first sealing layer 30 and the second sealing layer 32.

FIG. 1B is a plan view of the two-phase resin layer according to the first embodiment of the present invention. The second sealing layer 32 is arranged on the grid points in the first sealing layer 30. The cross-sectional shape of the second sealing layer 32 on the surface parallel to the surface of the chip substrate 10 is rectangular. As shown in the enlarged view of the first sealing layer 30 in FIG. 1B, the first sealing layer 30 includes a phosphor 34. The phosphor 34 is dispersed and arranged inside the first sealing layer 30. Here, the two-phase resin layer 60 has a rectangular shape in a plan view, but other than this may be used. The shape of the biphasic resin layer 60 may be circular, elliptical or square in a plan view.

Next, a method of manufacturing the light emitting device 100 will be described. First, a sword-shaped mold is installed from the upper part of the reflective case 16. The mold has a plurality of pins that form a sword mountain shape. At this time, these pins are arranged inside the reflective case 16. Inside the reflective case 16, the pins are arranged at positions that form the second sealing layer 32. The length of each pin provided in the mold is adjusted. The lower end of the pin provided in the mold is arranged on the surface of the light emitting element 20, the terminal electrodes 12, 14 or the chip substrate 10, depending on the arranged position. Further, the upper end of the pin is arranged above the upper end of the reflective case 16. At this time, the pins are arranged so as not to come into contact with the bonding wire 22.

Next, the thermosetting first transparent resin is poured into the inside of the reflective case 16. Here, the phosphor 34 is dispersed in the first transparent resin in advance. Next, the first transparent resin is heat-cured. As a result, the first sealing layer 30 is formed. Then remove the mold. As a result, the first sealing layer 30 is in a state where an opening is provided at a position where the second sealing layer 32 is formed. Next, the thermosetting second transparent resin is poured so as to completely fill the inside of the reflective case 16. The second transparent resin is a resin having a coefficient of thermal expansion different from that of the first sealing layer 30. The second transparent resin is filled so as to fill the opening provided in the first sealing layer 30. Next, the second transparent resin is heat-cured to form the second sealing layer 32.

Next, the light emitting mechanism of the light emitting device 100 will be described. The light emitting element 20 is energized via the terminal electrodes 12 and 14. At this time, light is emitted from the light emitting layer included in the light emitting element 20. The light emitting element 20 emits light having a first wavelength. The phosphor 34 absorbs light of the first wavelength and emits light having a wavelength different from that of the first wavelength.

In the present embodiment, the light emitting element 20 emits blue light. Further, the phosphor 34 absorbs blue light and emits light. When blue light is emitted from the light emitting element 20, the phosphor 34 absorbs the blue light and emits yellow light. Blue and yellow are complementary colors. Therefore, white light is emitted from the light emitting device 100 by mixing blue and yellow. The light emitted by the light emitting element 20 is partially reflected by the reflection case 16, the terminal electrodes 12, 14 or the chip substrate 10, and is emitted toward the upper surface of the reflection case 16.

Here, in the present embodiment, the light emitting device 100 includes one type of phosphor 34, but may include a plurality of types of phosphors. In this case, by mixing a plurality of types of phosphors, light having a color complementary to the emission color of the light emitting element 20 can be obtained. Further, a plurality of types of phosphors may emit light that complement each other. Further, in the present embodiment, the light emitting device 100 emits white light, but other colors may be used. In this case, the light emitting device 100 is provided with a phosphor that can obtain the light emitting color of the light emitting device 100 by mixing with the light emitting color of the light emitting element 20. Further, a diffusing material may be mixed with the first sealing layer 30.

The light emitting element 20 emits light and generates heat due to light emission loss. Further, the phosphor 34 absorbs light having a short wavelength and emits light having a long wavelength, and generates heat due to wavelength conversion loss. In particular, the temperature of the phosphor 34 arranged in the vicinity of the light emitting element 20 further rises due to the influence of the heat emitting element 20. The heat generated by the phosphor 34 is dissipated through the transparent resin around the phosphor 34, the light emitting element 20, the terminal electrode 14, and the chip substrate 10. However, the thermal conductivity of a thermosetting transparent resin is generally low. Therefore, the temperature of the first sealing layer 30 is unlikely to drop. Therefore, the temperature of the first sealing layer 30 tends to be the highest in the light emitting device 100 while the light emitting device 100 is lit. Therefore, the first sealing layer 30 containing the phosphor 34 is susceptible to heat generation. Therefore, the first sealing layer 30 containing the phosphor 34 tends to expand thermally.

As a structure in which the light emitting device is sealed with a transparent resin, a structure in which the light emitting element is covered with a sealing layer composed of a single layer containing a phosphor can be considered. Here, as described above, the sealing layer containing the phosphor tends to expand thermally. Therefore, thermal stress is likely to be generated in the sealing layer by turning on and off the light emitting device. At this time, the central portion of the sealing layer tends to have the highest temperature, and strong thermal stress may be generated. At this time, cracks may occur in the central portion of the sealing layer. Here, the sealing layer containing the phosphor contributes to the color conversion of the emitted color. Therefore, if cracks occur inside the sealing layer containing the phosphor, color unevenness and color shift may occur. Also, if the sealing layer is composed of a single layer, cracks may grow throughout the sealing layer.

On the other hand, in the present embodiment, the first sealing layer 30 and the second sealing layer 32 form the two-phase resin layer 60. When thermal stress is generated in the two-phase resin layer 60, cracks are likely to occur at the interface between the first sealing layer 30 and the second sealing layer 32, which have the weakest bonding force in the two-phase resin layer 60. Therefore, in the present embodiment, it is possible to limit the crack generation location to the boundary surface between the first sealing layer 30 and the second sealing layer 32. Here, the interface between the first sealing layer 30 and the second sealing layer 32 does not contain the phosphor 34. Therefore, the interface does not contribute to the color conversion. Therefore, the cracks generated on the boundary surface do not cause color unevenness and color shift. Therefore, in the present embodiment, it is possible to suppress color unevenness and color shift due to the occurrence of cracks.

Further, the cracks generated at the boundary surface between the first sealing layer 30 and the second sealing layer 32 grow along the boundary surface. Therefore, it is possible to limit the growth of cracks to the boundary surface. The second sealing layer 32 according to the present embodiment has a columnar shape in which the light emitting direction of the light emitting device 100 is the longitudinal direction. Therefore, the boundary surface between the first sealing layer 30 and the second sealing layer 32 is limited to a narrow range. Therefore, it is possible to limit the crack occurrence location to a narrow range. Therefore, it is possible to prevent cracks from extending to the entire sealing layer.

Further, in the present embodiment, the second sealing layer 32 is arranged in a plurality of regions of the first sealing layer 30. This makes it possible to disperse the thermal stress as compared with the case where the second sealing layer 32 is arranged at one place. Therefore, it becomes possible to further suppress the growth of cracks.

Further, the first sealing layer 30 and the second sealing layer 32 are made of materials having different coefficients of thermal expansion. The first sealing layer 30 is made of a material that expands more easily than the second sealing layer 32. Therefore, the volume expansion coefficient of the second sealing layer 32 is smaller than the volume expansion coefficient of the first sealing layer 30 with respect to the influence of heat generation. In this configuration, the second sealing layer 32 acts like a cushion against the thermal expansion of the first sealing layer 30. As a result, the thermal stress generated in the first sealing layer 30 is relaxed by the second sealing layer 32. Therefore, it is possible to suppress the occurrence of cracks in the first sealing layer 30.

Further, in the present embodiment, the first sealing layer 30 and the second sealing layer 32 have different coefficients of thermal expansion. In addition to the coefficient of thermal expansion, the first sealing layer 30 and the second sealing layer 32 may have different Young's modulus, elastic modulus, or hardness. Also in this case, the thermal expansion generated in the first sealing layer 30 can be absorbed by the second sealing layer 32.

From the above, in the present embodiment, the two-phase resin layer 60 is formed by the first sealing layer 30 and the second sealing layer 32 having different coefficients of thermal expansion. As a result, the thermal stress generated in the first sealing layer 30 can be relaxed in the second sealing layer 32. Further, when cracks are generated due to thermal stress, the generation and growth of cracks can be limited to the interface between the first sealing layer 30 and the second sealing layer 32. Therefore, it is possible to suppress the generation of cracks inside the first sealing layer 30 containing the phosphor 34, and to suppress color unevenness and color deviation. Therefore, high reliability can be obtained.

In the present embodiment, it is assumed that the phosphor 34 is dispersed in the first sealing layer 30. On the other hand, the second sealing layer 32 may include the phosphor 34. Further, both the first sealing layer 30 and the second sealing layer 32 may contain the phosphor 34. When the phosphor 34 is dispersed in the second sealing layer 32, a diffusing material may be mixed in the second sealing layer 32.

In the present embodiment, the first sealing layer 30 and the second sealing layer 32 are made of materials having different coefficients of thermal expansion. As a modification of this, the first sealing layer 30 and the second sealing layer 32 may be formed of the same type of material. The first sealing layer 30 contains a phosphor 34. Therefore, the first sealing layer 30 receives more heat from the heat generated by the phosphor 34 than the second sealing layer 32. As a result, even if the first sealing layer 30 and the second sealing layer 32 are made of the same type of material, the volume expansion coefficient of the second sealing layer 32 is higher than the volume expansion coefficient of the first sealing layer 30. Also becomes smaller. Therefore, in this case as well, the thermal stress can be relaxed by the second sealing layer 32.

Similarly, the first sealing layer 30 and the second sealing layer 32 may be formed of the same type of material, and the second sealing layer 32 may include the phosphor 34. In this case, the coefficient of thermal expansion of the first sealing layer 30 is smaller than the coefficient of thermal expansion of the second sealing layer 32. Therefore, the first sealing layer 30 makes it possible to relieve the thermal stress of the second sealing layer 32.

2A to 2C are cross-sectional views of a light emitting device according to a modified example of the first embodiment of the present invention. In the light emitting device 100, the length of the second sealing layer 32 in the vertical direction was the same as the length of the first sealing layer 30 in the same direction. On the other hand, as shown in FIGS. 2A to 2C, the length of the second sealing layer 32 in the vertical direction may be shorter than the length of the first sealing layer 30 in the same direction.

In the light emitting device 400 shown in FIG. 2A, the upper end of the second sealing layer 432 is arranged at the same height as the upper surface of the first sealing layer 430. On the other hand, the lower end of the second sealing layer 432 does not reach the surfaces of the chip substrate 10, the terminal electrodes 12, 14 and the light emitting element 20, which are the lower ends of the first sealing layer 430. In the light emitting device 500 shown in FIG. 2B, the lower end of the second sealing layer 532 is arranged at the lower end of the first sealing layer 530. On the other hand, the upper end of the second sealing layer 532 is arranged at a position lower than the upper surface of the first sealing layer 530. In the light emitting device 600 shown in FIG. 2C, the upper end of the second sealing layer 632 is arranged at a position lower than the upper surface of the first sealing layer 630. Further, the lower end of the second sealing layer 632 is arranged at the same height as the surface of the light emitting element 20.

A method of manufacturing the light emitting device 400 shown in FIG. 2A will be described. The manufacturing method of the light emitting device 400 is the same as the manufacturing method of the light emitting device 100. In the method of manufacturing the light emitting device 100, the lower ends of the pins included in the Kenzan-shaped mold are arranged on the surface of the light emitting element 20, the terminal electrodes 12, 14 or the chip substrate 10 which is the lower ends of the first sealing layer 430. On the other hand, in the manufacturing method of the light emitting device 400, the lower end of the pin is arranged at the position where the lower end of the second sealing layer 432 is arranged. Therefore, the lower end of the pin is arranged so as not to reach the surface of the light emitting element 20, the terminal electrodes 12, 14 or the chip substrate 10.

Next, the manufacturing methods of the light emitting devices 500 and 600 shown in FIGS. 2B and 2C will be described. First, as in the manufacturing method of the light emitting device 100, the pins included in the sword-shaped mold are arranged so as to be arranged inside the reflective case 16. Here, the upper end of the pin is arranged above the position where the upper ends of the second sealing layers 532 and 632 are arranged. In the method of manufacturing the light emitting device 500, the lower end of the pin is arranged on the surface of the light emitting element 20, the terminal electrodes 12, 14 or the chip substrate 10 according to the position where the pin is arranged. Further, in the method of manufacturing the light emitting device 600, the lower end of the pin is arranged at the same height as the surface of the light emitting element 20. At this time, the pins are arranged so as not to come into contact with the bonding wire 22.

Next, the thermosetting first transparent resin in which the phosphor 34 is dispersed in advance is poured into the inside of the reflection case 16 in the same manner as in the manufacturing method of the light emitting device 100. Here, the first transparent resin is poured up to the height of the upper ends of the second sealing layers 532 and 632. Next, the first transparent resin is heat-cured. As a result, the first sealing layers 530 and 630 are formed up to the height of the upper ends of the second sealing layers 532 and 632. Then remove the mold. As a result, the first sealing layers 530 and 630 are in a state where openings or grooves are provided at positions where the second sealing layers 532 and 632 are formed.

Next, the second transparent resin is filled up to the height of the upper ends of the second sealing layers 532 and 632. The second transparent resin is filled so as to fill the openings or grooves provided in the first sealing layers 530 and 630. Next, the second transparent resin is heat-cured to form the second sealing layers 532 and 632. Next, the first transparent resin in which the phosphor 34 is dispersed is poured so as to completely fill the inside of the reflective case 16. Next, the first transparent resin is heat-cured. As a result, the first sealing layers 530 and 630 are formed.

In the light emitting devices 400, 500, 600, the area of the boundary surface between the first sealing layers 430, 530, 630 and the second sealing layers 432, 532, 632 is smaller than that of the light emitting device 100. Therefore, it is possible to limit the location where the crack occurs to a range narrower than that of the light emitting device 100. Therefore, the growth of cracks can be further suppressed as compared with the light emitting device 100.

3A and 3B are cross-sectional views of a light emitting device according to a modification of the first embodiment of the present invention. In the light emitting device 100, the second sealing layer 32 is arranged on the grid points in the first sealing layer 30. On the other hand, the second sealing layer 32 may be arranged in a different arrangement as long as it is arranged in a plurality of regions of the first sealing layer 30.

As in the light emitting device 200 shown in FIG. 3A, the second sealing layer 232 may be arranged only on the surface of the light emitting element 20. In the vicinity of the light emitting element 20, a large amount of thermal stress acts due to the influence of heat generated by the light emitting element 20. By providing the second sealing layer 232 in the region where the thermal stress is large, the thermal stress can be efficiently relieved. Further, as in the light emitting device 300 shown in FIG. 3B, a second sealing layer 332 may be provided in addition to the upper part of the light emitting element 20.

In addition to this, the second sealing layer 32 may be dispersed and arranged over the entire area of the first sealing layer 30. With this configuration, the thermal stress can be relaxed over the entire area of the first sealing layer 30. Therefore, the effect of relaxing the thermal stress generated in the two-phase resin layer 60 is enhanced. Further, the second sealing layer 32 may be arranged evenly dispersed in the first sealing layer 30. Further, the second sealing layer 32 may be randomly or non-uniformly arranged in the first sealing layer 30.

4A to 4D are plan views of the two-phase resin layer according to the modified example of the first embodiment of the present invention. In the light emitting device 100, the second sealing layer 32 has a rectangular cross-sectional shape. On the other hand, the cross-sectional shape of the second sealing layer 32 may be another shape as long as it can be manufactured by the pin provided in the above-mentioned sword-shaped mold.

In the two-phase resin layer 60a shown in FIG. 4A, the second sealing layer 32a has a square cross-sectional shape. Here, the squares are arranged so that one of the diagonal lines is parallel to the longitudinal direction of the diphasic resin layer 60a. In this configuration, one of the adjacent second sealing layers 32a forms a boundary surface forming the first sealing layer 30a, and the other of the adjacent second sealing layers 32a forms the first sealing layer 30a. The surface is different from the boundary surface.

On the other hand, in the two-phase resin layer 60 included in the light emitting device 100, one of the adjacent second sealing layers 32 is a boundary surface formed with the first sealing layer 30, and the other is the first sealing layer 30. Includes a surface that is the same as the boundary surface to be formed. Therefore, in the biphasic resin layer 60a, the boundary surface is formed in many directions as compared with the biphasic resin layer 60. At this time, the second sealing layer 32a functions as a cushion in many directions with respect to the thermal expansion of the first sealing layer 30a. Therefore, in the two-phase resin layer 60a, the thermal stress can be dispersed in multiple directions. Therefore, the biphasic resin layer 60a can enhance the effect of suppressing the occurrence of cracks as compared with the biphasic resin layer 60.

In FIG. 4A, the second sealing layer 32a has a square cross-sectional shape. On the other hand, the cross-sectional shape may be triangular, quadrangular or polygonal. Further, in the two-phase resin layer 60a, the cross-sectional shapes of all the second sealing layers 32a were squares having the same inclination with respect to the longitudinal direction of the two-phase resin layer 60a. On the other hand, if one of the adjacent second sealing layers 32a has a different surface from the boundary surface formed with the first sealing layer 30a and the other with the first sealing layer 30a. The cross-sectional shape of each of the second sealing layers 32a may have different inclinations.

In the two-phase resin layer 60b shown in FIG. 4B, the second sealing layer 32b has a circular cross-sectional shape. Also in this configuration, the boundary surface formed by one of the adjacent second sealing layers 32b with the first sealing layer 30b and the boundary surface formed by the other with the first sealing layer 30b are not the same surface. Therefore, even in the two-phase resin layer 60b, the thermal stress can be dispersed in multiple directions as compared with the two-phase resin layer 60. Further, as shown in FIG. 4C, the cross-sectional shape of the second sealing layer 32c included in the two-phase resin layer 60c may be a mixture of square and circular ones. Further, the cross-sectional shape of the second sealing layer 32c may be a mixture of square and non-circular ones.

Further, in the light emitting device 100, the second sealing layer 32 is arranged on the grid points in the first sealing layer 30. On the other hand, the second sealing layer 32d may be arranged in a staggered manner as in the biphasic resin layer 60d shown in FIG. 4D. By arranging the second sealing layer 32d in a staggered pattern, the positions of the interface between the first sealing layer 30d and the second sealing layer 32d can be dispersed as compared with the two-phase resin layer 60. It will be possible. Therefore, in this configuration, the thermal stress is easily dispersed as compared with the light emitting device 100. Here, the two-phase resin layer 60d is provided with the second sealing layer 32d having a square cross-sectional shape, but the cross-sectional shape of the second sealing layer 32d may be another shape.

The light emitting device shown in FIGS. 3A, 3B and 4A to 4D can be produced by the same manufacturing method as that of the light emitting device 100. It is necessary to adjust the shape and arrangement of the pins provided in the Kenzan-shaped mold according to the cross-sectional shape and arrangement of the second sealing layer.

The light emitting device 100 according to the present embodiment is a chip type semiconductor light emitting device in which a reflective case 16 is arranged on the surface of a chip substrate 10. On the other hand, the light emitting device 100 may be a mold type in which the reflection case 16 is not provided. Further, the light emitting device 100 may be a lead type semiconductor light emitting device.

100, 200, 300, 400, 500, 600 light emitting device, 20 light emitting elements, 30, 230, 330, 430, 530, 630, 30a, 30b, 30c, 30d first sealing layer, 32, 232, 332, 432 5, 532, 632, 32a, 32b, 32c, 32d second sealing layer, 34 phosphor

Claims (13)

A light emitting device provided with a substrate and a light emitting element provided on the upper surface of the substrate to emit light of the first wavelength.
A first sealing layer that covers the upper surface of the substrate and the light emitting element,
It has a vertically elongated shape in a direction perpendicular to the upper surface of the substrate, and is arranged in a plurality of regions of the first sealing layer so that a side surface extending in a direction perpendicular to the upper surface of the substrate is in contact with the first sealing layer. With the second sealing layer
A phosphor that is arranged on at least one of the first sealing layer and the second sealing layer, absorbs the light of the first wavelength, and emits light having a wavelength different from that of the first wavelength.
With
The second sealing layer differs from the first sealing layer in the coefficient of thermal expansion, elastic modulus, Young's modulus or hardness.
The second sealing layer includes a plurality of sealing layers having a polygonal cross-sectional shape in a plan view.
Each of the plurality of sealing layers is provided so that the side surface is not aligned with the side surface of the adjacent sealing layer .
Said second sealing layer is arranged to be distributed over the entire said first sealing layer in plan view, the light emitting device according to claim Rukoto arranged on lattice points in a plan view. A light emitting device provided with a substrate and a light emitting element provided on the upper surface of the substrate to emit light of the first wavelength.
A first sealing layer that covers the upper surface of the substrate and the light emitting element,
It has a vertically elongated shape in a direction perpendicular to the upper surface of the substrate, and is arranged in a plurality of regions of the first sealing layer so that a side surface extending in a direction perpendicular to the upper surface of the substrate is in contact with the first sealing layer. With the second sealing layer
A phosphor that is arranged on at least one of the first sealing layer and the second sealing layer, absorbs the light of the first wavelength, and emits light having a wavelength different from that of the first wavelength.
With
The second sealing layer differs from the first sealing layer in the coefficient of thermal expansion, elastic modulus, Young's modulus or hardness.
The second sealing layer includes a plurality of sealing layers having a polygonal cross-sectional shape in a plan view.
Each of the plurality of sealing layers is provided so that the side surface is not aligned with the side surface of the adjacent sealing layer.
A light emitting device characterized in that the second sealing layer is dispersed and arranged over the entire area of the first sealing layer in a plan view, and is arranged in a staggered pattern in a plan view. The light emitting device according to claim 1 or 2, wherein the second sealing layer is evenly dispersed and arranged in the first sealing layer in a plan view. The light emitting device according to any one of claims 1 to 3, wherein at least a part of the second sealing layer has a quadrangular cross-sectional shape in a plan view. The light emitting device according to any one of claims 1 to 4 , wherein the phosphor is arranged in the first sealing layer. The light emitting device according to any one of claims 1 to 5 , wherein the phosphor is arranged in the second sealing layer. The light emitting device according to any one of claims 1 to 6 , wherein the first sealing layer has a coefficient of thermal expansion different from that of the second sealing layer. The light emitting device according to any one of claims 1 to 7 , wherein the first sealing layer has an elastic modulus different from that of the second sealing layer. The light emitting device according to any one of claims 1 to 8 , wherein the first sealing layer has a Young's modulus different from that of the second sealing layer. The light emitting device according to any one of claims 1 to 9 , wherein the first sealing layer has a hardness different from that of the second sealing layer. According to any one of claims 1 to 10 , the length of the second sealing layer in the direction perpendicular to the upper surface of the substrate is shorter than the length of the first sealing layer in the same direction. The light emitting device described. The light emitting device according to any one of claims 1 to 11, wherein at least a part of the second sealing layer is arranged on the upper surface of the light emitting device. The boundary surface of the first sealing layer and the second sealing layer, the light emitting device according to any one of claims 1 to 1 2, characterized in that does not include the phosphor.

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