JP6825294B2 - Power semiconductor drive circuit device - Google Patents

Power semiconductor drive circuit device Download PDF

Info

Publication number
JP6825294B2
JP6825294B2 JP2016195481A JP2016195481A JP6825294B2 JP 6825294 B2 JP6825294 B2 JP 6825294B2 JP 2016195481 A JP2016195481 A JP 2016195481A JP 2016195481 A JP2016195481 A JP 2016195481A JP 6825294 B2 JP6825294 B2 JP 6825294B2
Authority
JP
Japan
Prior art keywords
signal
circuit
control signal
verification
transformer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2016195481A
Other languages
Japanese (ja)
Other versions
JP2018061080A (en
Inventor
一修 田島
一修 田島
英樹 足助
英樹 足助
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanken Electric Co Ltd
Original Assignee
Sanken Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanken Electric Co Ltd filed Critical Sanken Electric Co Ltd
Priority to JP2016195481A priority Critical patent/JP6825294B2/en
Publication of JP2018061080A publication Critical patent/JP2018061080A/en
Application granted granted Critical
Publication of JP6825294B2 publication Critical patent/JP6825294B2/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Logic Circuits (AREA)
  • Electronic Switches (AREA)
  • Power Conversion In General (AREA)

Description

本発明は、パワー半導体を駆動する制御信号をトランスを介して絶縁伝送するパワー半導体駆動回路装置に関する。 The present invention relates to a power semiconductor drive circuit device for insulatingly transmitting a control signal for driving a power semiconductor via a transformer.

外部装置で生成された制御信号の入力を送信側装置で受け付け、受け付けた制御信号を送信側装置から受信側装置にトランスを介して絶縁伝送し、受信側装置から出力する制御信号によってパワー半導体を駆動するパワー半導体駆動回路装置が知られている(例えば、特許文献1参照)。 The input of the control signal generated by the external device is received by the transmitting side device, the received control signal is isolated and transmitted from the transmitting side device to the receiving side device via a transformer, and the power semiconductor is generated by the control signal output from the receiving side device. A power semiconductor drive circuit device for driving is known (see, for example, Patent Document 1).

この種のパワー半導体駆動回路装置では、トランスの1次−2次巻線間容量等の影響や、ノイズ、各部制御回路の誤動作で、制御信号を正常に絶縁伝送できない場合がある。そこで、特許文献1では、受信側装置からパワー半導体に出力する制御信号を、検証信号として受信側装置から送信側装置にトランスを介して絶縁伝送し、送信側装置において外部装置から入力された制御信号と検証信号とを比較することで、制御信号が正常に絶縁伝送されているか否かを判断している。 In this type of power semiconductor drive circuit device, the control signal may not be normally isolated and transmitted due to the influence of the capacitance between the primary and secondary windings of the transformer, noise, and malfunction of the control circuit of each part. Therefore, in Patent Document 1, the control signal output from the receiving side device to the power semiconductor is isolated and transmitted from the receiving side device to the transmitting side device via a transformer as a verification signal, and the control input from the external device in the transmitting side device is performed. By comparing the signal with the verification signal, it is determined whether or not the control signal is normally isolated and transmitted.

特開2010−10762号公報Japanese Unexamined Patent Publication No. 2010-10762

しかしながら、従来技術では、絶縁伝送する際や、制御信号を絶縁伝送可能なパルス信号に変換する際に遅れ時間が発生するため、検証信号は、送信側装置において外部装置から入力された制御信号に対して遅れた信号となる。従って、入力された制御信号と検証信号とが遅れ時間以上不一致である場合に、エラー検知がなされることになり、エラー検知までの時間精度が低くなってしまうという問題点があった。 However, in the prior art, a delay time occurs when performing isolated transmission or when converting a control signal into a pulse signal capable of isolated transmission, so that the verification signal is a control signal input from an external device in the transmitting side device. On the other hand, the signal is delayed. Therefore, when the input control signal and the verification signal do not match for the delay time or more, error detection is performed, and there is a problem that the time accuracy until error detection is lowered.

本発明の目的は、従来技術の上記課題を解決し、エラー検知の時間精度を向上させることができるパワー半導体駆動回路装置を提供することにある。 An object of the present invention is to provide a power semiconductor drive circuit device capable of solving the above problems of the prior art and improving the time accuracy of error detection.

本発明のパワー半導体駆動回路装置は、1次側に入力された制御信号を2次側に絶縁伝送して2次側のパワー半導体を駆動するパワー半導体駆動回路装置であって、1次側に入力された前記制御信号を入力制御信号として受け付け、絶縁伝送可能な送信用連続パルス信号に変換する制御信号送信回路と、前記送信用連続パルス信号を1次側から2次側に絶縁伝送する第1トランスと、2次側に絶縁伝送された前記送信用連続パルス信号を前記制御信号に復元し、復元した前記制御信号を出力制御信号として前記パワー半導体に向けて出力する制御信号受信回路と、前記出力制御信号を検証信号として絶縁伝送可能な帰還用連続パルス信号に変換する検証信号送信回路と、前記帰還用連続パルス信号を2次側から1次側に絶縁伝送する第2トランスと、1次側に絶縁伝送された前記帰還用連続パルス信号を前記検証信号に復元する検証信号受信回路と、前記第1トランス、前記制御信号受信回路、前記検証信号送信回路、前記第2トランス及び前記検証信号受信回路の遅れ時間を加味した比較信号を前記送信用連続パルス信号から生成する比較信号生成回路と、前記検証信号受信回路によって復元された前記検証信号と前記比較信号生成回路によって生成された前記比較信号とを比較することでエラー検知を行う信号比較回路と、を具備し、
前記比較信号生成回路は、前記第1トランスと同一構成の擬似第1トランスによって前記第1トランスと同様の動作で絶縁伝送を行い、前記制御信号受信回路と同一構成の擬似制御信号受信回路によって前記制御信号受信回路と同様の動作で復元動作を実行し、前記検証信号送信回路と同一構成の擬似検証信号送信回路によって前記検証信号送信回路と同様の動作で変換動作を実行し、前記第2トランスと同一構成の擬似第2トランスによって前記第2トランスと同様の動作で絶縁伝送を行い、前記検証信号受信回路と同一構成の擬似検証信号受信回路によって前記検証信号受信回路と同様の動作で復元動作を実行することで、前記送信用連続パルス信号から前記比較信号を生成することを特徴とする
The power semiconductor drive circuit device of the present invention is a power semiconductor drive circuit device that drives a power semiconductor on the secondary side by insulatingly transmitting a control signal input to the primary side to the secondary side and drives the power semiconductor on the secondary side. A control signal transmission circuit that receives the input control signal as an input control signal and converts it into a transmission continuous pulse signal that can be isolated and transmitted, and a first that isolates and transmits the transmission continuous pulse signal from the primary side to the secondary side. A control signal receiving circuit that restores the transmission continuous pulse signal isolated and transmitted to the secondary side to the control signal and outputs the restored control signal as an output control signal to the power semiconductor. A verification signal transmission circuit that converts the output control signal into a feedback continuous pulse signal that can be isolated and transmitted as a verification signal, a second transformer that isolates and transmits the feedback continuous pulse signal from the secondary side to the primary side, and 1. A verification signal receiving circuit that restores the feedback continuous pulse signal isolated and transmitted to the next side to the verification signal, the first transformer, the control signal receiving circuit, the verification signal transmitting circuit, the second transformer, and the verification. The comparison signal generation circuit that generates a comparison signal from the continuous pulse signal for transmission in consideration of the delay time of the signal reception circuit, the verification signal restored by the verification signal reception circuit, and the comparison signal generation circuit generated by the comparison signal generation circuit. It is equipped with a signal comparison circuit that detects an error by comparing it with a comparison signal .
The comparison signal generation circuit performs isolated transmission in the same operation as the first transformer by a pseudo first transformer having the same configuration as the first transformer, and the pseudo control signal receiving circuit having the same configuration as the control signal receiving circuit. The restoration operation is executed in the same operation as the control signal receiving circuit, the conversion operation is executed in the same operation as the verification signal transmitting circuit by the pseudo verification signal transmitting circuit having the same configuration as the verification signal transmitting circuit, and the second transformer is used. Insulation transmission is performed by the pseudo second transformer having the same configuration as the second transformer in the same operation as the second transformer, and the restoration operation is performed by the pseudo verification signal receiving circuit having the same configuration as the verification signal receiving circuit in the same operation as the verification signal receiving circuit. Is characterized in that the comparison signal is generated from the continuous pulse signal for transmission .

本発明によれば、2次側から1次側に絶縁伝送した検証信号と、検証信号の遅れ時間を加味した比較信号の比較によって、不一致を検出しない不惑期間を設けることなくエラー検知を行うことができ、エラー検知の時間精度を向上させることができるという効果を奏する。 According to the present invention, error detection is performed by comparing the verification signal isolated and transmitted from the secondary side to the primary side and the comparison signal in consideration of the delay time of the verification signal, without providing a nuisance period in which no mismatch is detected. This has the effect of improving the time accuracy of error detection.

本発明に係るパワー半導体駆動回路装置の実施の形態を示す回路構成図である。It is a circuit block diagram which shows the embodiment of the power semiconductor drive circuit apparatus which concerns on this invention. 図1に示す比較信号生成回路の動作を説明する波形図である。It is a waveform diagram explaining the operation of the comparison signal generation circuit shown in FIG. 図1に示す比較信号生成回路の回路構成例を示す図である。It is a figure which shows the circuit structure example of the comparison signal generation circuit shown in FIG.

次に、本発明の実施の形態を、図面を参照して具体的に説明する。
本実施の形態のパワー半導体駆動回路装置1は、図1を参照すると、マイコン2で生成された制御信号に基づいてパワー半導体3を駆動する。パワー半導体駆動回路装置1は、送信側装置10と、第1トランス20と、受信側装置30と、第2トランス40とを備えている。なお、パワー半導体3は、IGBT(Insulated GateBipolor Transistor)、NPNバイポーラトランジスタ、FET(FieldEffect Transistor)等で構成される。
Next, an embodiment of the present invention will be specifically described with reference to the drawings.
The power semiconductor drive circuit device 1 of the present embodiment drives the power semiconductor 3 based on the control signal generated by the microcomputer 2, referring to FIG. The power semiconductor drive circuit device 1 includes a transmitting side device 10, a first transformer 20, a receiving side device 30, and a second transformer 40. The power semiconductor 3 is composed of an IGBT (Insulated GateBipolor Transistor), an NPN bipolar transistor, a FET (FieldEffect Transistor), and the like.

マイコン2は、例えば、パワー半導体3を介してモータ等の負荷を制御するための制御信号を生成し、生成した制御信号を送信側装置10の制御信号入力端子T1に入力する。そして、送信側装置10は、制御信号入力端子T1から入力された制御信号を、第1トランス20を介して受信側装置30に絶縁伝送する。そして、受信側装置30は、第1トランス20を介して絶縁伝送された制御信号を、制御信号出力端子T2からパワー半導体3の駆動端子(IGBTやFETの場合、ゲート端子)に出力することでパワー半導体3を駆動する。 For example, the microcomputer 2 generates a control signal for controlling a load of a motor or the like via a power semiconductor 3, and inputs the generated control signal to the control signal input terminal T1 of the transmitting side device 10. Then, the transmitting side device 10 isolates and transmits the control signal input from the control signal input terminal T1 to the receiving side device 30 via the first transformer 20. Then, the receiving side device 30 outputs the control signal isolated and transmitted via the first transformer 20 from the control signal output terminal T2 to the drive terminal (gate terminal in the case of the IGBT or FET) of the power semiconductor 3. Drives the power semiconductor 3.

送信側装置10は、制御信号送信回路11と、検証信号受信回路12と、比較信号生成回路13を備え、受信側装置30は、制御信号受信回路31と、ドライブ回路32と、検証信号送信回路33とを備えている。 The transmitting side device 10 includes a control signal transmitting circuit 11, a verification signal receiving circuit 12, and a comparison signal generating circuit 13, and the receiving side device 30 includes a control signal receiving circuit 31, a drive circuit 32, and a verification signal transmitting circuit. It is equipped with 33.

制御信号送信回路11は、マイコン2から制御信号入力端子T1に入力された制御信号(以下、入力制御信号Aと称す)に基づき、入力制御信号Aのハイレベル期間を連続パルスに変換した送信用連続パルス信号Bを生成し、送信用連続パルス信号Bを第1トランス20の1次巻線と比較信号生成回路13とに出力する。なお、送信用連続パルス信号Bは、第1トランス20を介して絶縁伝送可能な信号であり、連続パルスの各パルス幅は、入力制御信号Aのパルス幅25μsに比べて十分に小さい値になっている。また、制御信号送信回路11において、入力制御信号Aのローレベル期間を連続パルスに変換した送信用連続パルス信号Bを生成するようにしても良い。 The control signal transmission circuit 11 is for transmission in which the high level period of the input control signal A is converted into a continuous pulse based on the control signal (hereinafter referred to as the input control signal A) input from the microcomputer 2 to the control signal input terminal T1. The continuous pulse signal B is generated, and the continuous pulse signal B for transmission is output to the primary winding of the first transformer 20 and the comparison signal generation circuit 13. The continuous pulse signal B for transmission is a signal that can be isolated and transmitted via the first transformer 20, and each pulse width of the continuous pulse is a value sufficiently smaller than the pulse width of 25 μs of the input control signal A. ing. Further, the control signal transmission circuit 11 may generate a transmission continuous pulse signal B obtained by converting the low level period of the input control signal A into a continuous pulse.

送信用連続パルス信号Bは、第1トランス20の1次巻線から2次巻線に絶縁伝送され、送信用連続パルス信号Cとして受信側装置30の制御信号受信回路31に入力される。 The transmission continuous pulse signal B is isolated and transmitted from the primary winding of the first transformer 20 to the secondary winding, and is input to the control signal receiving circuit 31 of the receiving side device 30 as the transmission continuous pulse signal C.

制御信号受信回路31は、入力された送信用連続パルス信号Cを、連続パルス期間をハイレベル期間に戻すことで制御信号に復元し、復元した制御信号(以下、出力制御信号Dと称す)をドライブ回路32に出力する。出力制御信号Dは、ドライブ回路32によってパワー半導体3の駆動信号として制御信号出力端子T2から出力される。 The control signal receiving circuit 31 restores the input continuous pulse signal C for transmission to a control signal by returning the continuous pulse period to the high level period, and the restored control signal (hereinafter referred to as output control signal D) is used. Output to the drive circuit 32. The output control signal D is output from the control signal output terminal T2 as a drive signal of the power semiconductor 3 by the drive circuit 32.

また、出力制御信号Dは、検証信号として検証信号送信回路33にも入力される。検証信号送信回路33は、検証信号として入力された出力制御信号Dに基づき、出力制御信号Dのハイレベル期間を連続パルスに変換した帰還用連続パルス信号Eを生成し、帰還用連続パルス信号Eを第2トランス40の2次巻線に出力する。なお、帰還用連続パルス信号Eは、第2トランス40を介して絶縁伝送可能な信号であり、連続パルスの各パルス幅は、出力制御信号Dのパルス幅に比べて十分に小さい値になっている。また、制御信号送信回路11において、出力制御信号Dのローレベル期間を連続パルスに変換した帰還用連続パルス信号Eを生成するようにしても良い。 Further, the output control signal D is also input to the verification signal transmission circuit 33 as a verification signal. The verification signal transmission circuit 33 generates a feedback continuous pulse signal E in which the high level period of the output control signal D is converted into a continuous pulse based on the output control signal D input as the verification signal, and the feedback continuous pulse signal E is generated. Is output to the secondary winding of the second transformer 40. The feedback continuous pulse signal E is a signal that can be isolated and transmitted via the second transformer 40, and each pulse width of the continuous pulse is a value sufficiently smaller than the pulse width of the output control signal D. There is. Further, the control signal transmission circuit 11 may generate a feedback continuous pulse signal E obtained by converting the low level period of the output control signal D into a continuous pulse.

帰還用連続パルス信号Eは、第2トランス40の2次巻線から1次巻線に絶縁伝送され、帰還用連続パルス信号Fとして送信側装置10の検証信号受信回路12に入力される。 The feedback continuous pulse signal E is isolated and transmitted from the secondary winding of the second transformer 40 to the primary winding, and is input to the verification signal receiving circuit 12 of the transmitting side device 10 as the feedback continuous pulse signal F.

検証信号受信回路12は、入力された帰還用連続パルス信号Fを、連続パルス期間をハイレベル期間に戻すことで検証信号に復元し、復元した検証信号(以下、検証信号Gと称す)を信号比較回路14に出力する。 The verification signal receiving circuit 12 restores the input continuous pulse signal F for feedback to a verification signal by returning the continuous pulse period to a high level period, and the restored verification signal (hereinafter referred to as verification signal G) is a signal. Output to the comparison circuit 14.

比較信号生成回路13は、送信用連続パルス信号Bの連続パルス期間をハイレベル期間に戻す復元動作と、予め設定された時間遅らせる遅延動作とを実行することで、比較信号Hを生成し、生成した比較信号Hを信号比較回路14に出力する。なお、比較信号生成回路13において、送信用連続パルス信号Bを予め設定された時間遅らせる遅延動作を実行した後、連続パルス期間をハイレベル期間に戻す復元動作を実行することで比較信号Hを生成するようにしても良い。 The comparison signal generation circuit 13 generates and generates a comparison signal H by executing a restoration operation for returning the continuous pulse period of the transmission continuous pulse signal B to a high level period and a delay operation for delaying a preset time. The resulting comparison signal H is output to the signal comparison circuit 14. In the comparison signal generation circuit 13, the comparison signal H is generated by executing a delay operation of delaying the transmission continuous pulse signal B by a preset time and then performing a restoration operation of returning the continuous pulse period to the high level period. You may try to do it.

図2には、パワー半導体駆動回路装置1の各部の動作波形が示されている。なお、図2に示す波形は、上から、入力制御信号A、送信用連続パルス信号B、送信用連続パルス信号C、出力制御信号D、帰還用連続パルス信号E、帰還用連続パルス信号F、検証信号G、比較信号H、を示している。 FIG. 2 shows the operation waveforms of each part of the power semiconductor drive circuit device 1. From the top, the waveforms shown in FIG. 2 include an input control signal A, a continuous pulse signal B for transmission, a continuous pulse signal C for transmission, an output control signal D, a continuous pulse signal E for feedback, and a continuous pulse signal F for feedback. The verification signal G and the comparison signal H are shown.

図2を参照すると、制御信号から連続パルス信号への変換動作によって、送信用連続パルス信号Bは入力制御信号Aよりも遅れ(遅れ時間T1)、帰還用連続パルス信号Eは出力制御信号Dよりも遅れる(遅れ時間T4)。なお、制御信号送信回路11と、検証信号送信回路33とを同一構成とした場合には、遅れ時間T1=遅れ時間T4となる。 Referring to FIG. 2, due to the conversion operation from the control signal to the continuous pulse signal, the transmission continuous pulse signal B is delayed from the input control signal A (delay time T1), and the feedback continuous pulse signal E is from the output control signal D. Is also delayed (delay time T4). When the control signal transmission circuit 11 and the verification signal transmission circuit 33 have the same configuration, the delay time T1 = the delay time T4.

また、連続パルス信号の絶縁伝送によって、送信用連続パルス信号Cは送信用連続パルス信号Bよりも遅れ(遅れ時間T2)、帰還用連続パルス信号Fは帰還用連続パルス信号Eよりも遅れる(遅れ時間T5)。なお、第1トランス20と、第2トランス40とを同一構成とした場合には、遅れ時間T2=遅れ時間T5となる。 Further, due to the isolated transmission of the continuous pulse signal, the transmission continuous pulse signal C is delayed from the transmission continuous pulse signal B (delay time T2), and the feedback continuous pulse signal F is delayed from the feedback continuous pulse signal E (delay). Time T5). When the first transformer 20 and the second transformer 40 have the same configuration, the delay time T2 = the delay time T5.

さらに、連続パルス信号から制御信号への復元動作によって、出力制御信号Dは送信用連続パルス信号Cよりも遅れ(遅れ時間T3)、検証信号Gは帰還用連続パルス信号Fよりも遅れる(遅れ時間T6)。なお、制御信号受信回路31と、検証信号受信回路12とを同一構成とした場合には、遅れ時間T3=遅れ時間T6となる。 Further, due to the restoration operation from the continuous pulse signal to the control signal, the output control signal D is delayed from the transmission continuous pulse signal C (delay time T3), and the verification signal G is delayed from the feedback continuous pulse signal F (delay time). T6). When the control signal receiving circuit 31 and the verification signal receiving circuit 12 have the same configuration, the delay time T3 = the delay time T6.

従って、送信用連続パルス信号Bに対する検証信号Gの遅れ時間Taは、Ta=(T2+T3+T4+T5+T6)となる。そこで、比較信号生成回路13で、送信用連続パルス信号Bに対する遅れ時間Tbが、Tb=Taとなる比較信号Hを生成させ、信号比較回路14で、検証信号Gと比較信号Hとを比較し、検証信号Gと比較信号Hとが一致しない場合に、エラー検知信号を出力する。エラー検知信号は、エラー検知信号出力端子T3経由でマイコン2に入力され、マイコン2は、パワー半導体3を停止する信号を出力し、パワー半導体3をオフさせる。 Therefore, the delay time Ta of the verification signal G with respect to the continuous pulse signal B for transmission is Ta = (T2 + T3 + T4 + T5 + T6). Therefore, the comparison signal generation circuit 13 generates a comparison signal H in which the delay time Tb with respect to the continuous pulse signal B for transmission is Tb = Ta, and the signal comparison circuit 14 compares the verification signal G with the comparison signal H. , When the verification signal G and the comparison signal H do not match, an error detection signal is output. The error detection signal is input to the microcomputer 2 via the error detection signal output terminal T3, and the microcomputer 2 outputs a signal to stop the power semiconductor 3 and turns off the power semiconductor 3.

これにより、検証信号Gと比較される比較信号Hは、検証信号Gと同様に、第1トランス20、制御信号受信回路31、検証信号送信回路33、第2トランス40及び検証信号受信回路12での遅れが加味されて補償されることから、信号比較回路14での比較を容易に実行することができる。 As a result, the comparison signal H to be compared with the verification signal G is the first transformer 20, the control signal receiving circuit 31, the verification signal transmitting circuit 33, the second transformer 40, and the verification signal receiving circuit 12 in the same manner as the verification signal G. Since the delay is added and compensated for, the comparison in the signal comparison circuit 14 can be easily performed.

なお、比較信号生成回路13による比較信号Hを生成では、連続パルス期間をハイレベル期間に戻す復元動作が必要となる。この場合、検証信号受信回路12もしくは制御信号受信回路31と同一の復元動作を実行することで、遅れ時間T3もしくは遅れ時間T6が補償される。これにより、遅延動作では、遅れ時間T3もしくは遅れ時間T6を除く他の遅れ時間(T2+T4+T5+T6もしくはT2+T3+T4+T5)を補償する。 In addition, in generating the comparison signal H by the comparison signal generation circuit 13, a restoration operation for returning the continuous pulse period to the high level period is required. In this case, the delay time T3 or the delay time T6 is compensated by executing the same restoration operation as the verification signal receiving circuit 12 or the control signal receiving circuit 31. Thereby, in the delay operation, the delay time (T2 + T4 + T5 + T6 or T2 + T3 + T4 + T5) other than the delay time T3 or the delay time T6 is compensated.

また、図3に示す比較信号生成回路13aによって、送信用連続パルス信号Bから比較信号Hを生成するように構成しても良い。比較信号生成回路13aは、第1トランス20と同一構成の擬似第1トランス20aと、制御信号受信回路31と同一構成の擬似制御信号受信回路31aと、検証信号送信回路33と同一構成の擬似検証信号送信回路33aと、第2トランス40と同一構成の擬似第2トランス40aと、検証信号受信回路12と同一構成の擬似検証信号受信回路12aと、を備えている。 Further, the comparison signal generation circuit 13a shown in FIG. 3 may be configured to generate the comparison signal H from the transmission continuous pulse signal B. The comparison signal generation circuit 13a includes a pseudo first transformer 20a having the same configuration as the first transformer 20, a pseudo control signal receiving circuit 31a having the same configuration as the control signal receiving circuit 31, and a pseudo verification having the same configuration as the verification signal transmitting circuit 33. It includes a signal transmission circuit 33a, a pseudo second transformer 40a having the same configuration as the second transformer 40, and a pseudo verification signal reception circuit 12a having the same configuration as the verification signal reception circuit 12.

比較信号生成回路13aにおいて、擬似第1トランス20aは第1トランス20と同様の動作で絶縁伝送を行い(送信用連続パルス信号Bから送信用連続パルス信号Cの遅れ時間T2を補償)、擬似制御信号受信回路31aは制御信号受信回路31と同様の動作で復元動作を実行し(送信用連続パルス信号Cから出力制御信号Dの遅れ時間T3を補償)、擬似検証信号送信回路33aは検証信号送信回路33と同様の動作で変換動作を実行し(出力制御信号Dから帰還用連続パルス信号Eの遅れ時間T4を補償)、擬似第2トランス40aは第2トランス40と同様の動作で絶縁伝送を行い(帰還用連続パルス信号Eから帰還用連続パルス信号Fの遅れ時間T5を補償)、擬似検証信号受信回路12aは検証信号受信回路12と同様の動作で復元動作を実行する(帰還用連続パルス信号Fから検証信号Gの遅れ時間T6を補償)。 In the comparison signal generation circuit 13a, the pseudo first transformer 20a performs isolated transmission in the same operation as the first transformer 20 (compensates the delay time T2 of the transmission continuous pulse signal B to the transmission continuous pulse signal C) and performs pseudo control. The signal receiving circuit 31a executes a restoration operation in the same operation as the control signal receiving circuit 31 (compensates the delay time T3 of the output control signal D from the continuous pulse signal C for transmission), and the pseudo verification signal transmitting circuit 33a transmits the verification signal. The conversion operation is executed in the same operation as the circuit 33 (compensating the delay time T4 of the feedback continuous pulse signal E from the output control signal D), and the pseudo second transformer 40a performs isolated transmission in the same operation as the second transformer 40. (Compensating the delay time T5 of the feedback continuous pulse signal F from the feedback continuous pulse signal E), the pseudo verification signal receiving circuit 12a executes a restoration operation in the same operation as the verification signal receiving circuit 12 (returning continuous pulse). Compensate for the delay time T6 of the verification signal G from the signal F).

以上のように、本実施の形態によれば、1次側に入力された制御信号を2次側に絶縁伝送して2次側のパワー半導体を駆動するパワー半導体駆動回路装置であって、1次側に入力された制御信号を入力制御信号Aとして受け付け、絶縁伝送可能な送信用連続パルス信号Bに変換する制御信号送信回路11と、送信用連続パルス信号Bを1次側から2次側に絶縁伝送し、送信用連続パルス信号Cとして出力する第1トランス10と、2次側に絶縁伝送された送信用連続パルス信号Cを制御信号に復元し、復元した制御信号を出力制御信号Dとしてパワー半導体3に向けて出力する制御信号受信回路31と、出力制御信号Dを検証信号として絶縁伝送可能な帰還用連続パルス信号Eに変換する検証信号送信回路33と、帰還用連続パルス信号Eを2次側から1次側に絶縁伝送し、帰還用連続パルス信号Fとして出力する第2トランス40と、1次側に絶縁伝送された帰還用連続パルス信号Fを検証信号Gに復元する検証信号受信回路12と、第1トランス20、制御信号受信回路31、検証信号送信回路33、第2トランス40及び検証信号受信回路12の遅れ時間を加味した比較信号Hを送信用連続パルス信号Bから生成する比較信号生成回路13と、検証信号受信回路12によって復元された検証信号Gと比較信号生成回路13によって生成された比較信号Hとを比較することでエラー検知を行う信号比較回路14と、を備えている。
この構成により、2次側から1次側に絶縁伝送した検証信号Gと、検証信号Gの遅れ時間を加味した比較信号との比較によって、不一致を検出しない不惑期間を設けることなくエラー検知を行うことができ、エラー検知の時間精度を向上させることができることができる。また、検証信号Gと比較される比較信号Hは、検証信号Gと同様に、第1トランス20、制御信号受信回路31、検証信号送信回路33、第2トランス40及び検証信号受信回路12での遅れが加味されて補償されることから、信号比較回路14での比較を容易に実行することができる。
As described above, according to the present embodiment, it is a power semiconductor drive circuit device that drives the power semiconductor on the secondary side by insulatingly transmitting the control signal input to the primary side to the secondary side. The control signal transmission circuit 11 that receives the control signal input to the next side as the input control signal A and converts it into the transmission continuous pulse signal B capable of isolated transmission, and the transmission continuous pulse signal B from the primary side to the secondary side. The first transformer 10 that is isolated and transmitted to the secondary side and output as the transmission continuous pulse signal C and the transmission continuous pulse signal C that is isolated and transmitted to the secondary side are restored to the control signal, and the restored control signal is output to the output control signal D. The control signal receiving circuit 31 that outputs to the power semiconductor 3 as a verification signal, the verification signal transmission circuit 33 that converts the output control signal D into a feedback continuous pulse signal E that can be isolated and transmitted as a verification signal, and a feedback continuous pulse signal E. Is isolated from the secondary side to the primary side and output as a feedback continuous pulse signal F. Verification that restores the feedback continuous pulse signal F isolated and transmitted to the primary side to the verification signal G. A comparison signal H considering the delay times of the signal receiving circuit 12, the first transformer 20, the control signal receiving circuit 31, the verification signal transmitting circuit 33, the second transformer 40, and the verification signal receiving circuit 12 is transmitted from the continuous pulse signal B for transmission. A signal comparison circuit 14 that detects an error by comparing the generated comparison signal generation circuit 13 with the verification signal G restored by the verification signal reception circuit 12 and the comparison signal H generated by the comparison signal generation circuit 13. It has.
With this configuration, error detection is performed by comparing the verification signal G isolated and transmitted from the secondary side to the primary side with the comparison signal in consideration of the delay time of the verification signal G, without providing a nuisance period in which no mismatch is detected. It is possible to improve the time accuracy of error detection. Further, the comparison signal H to be compared with the verification signal G is the first transformer 20, the control signal receiving circuit 31, the verification signal transmitting circuit 33, the second transformer 40, and the verification signal receiving circuit 12 in the same manner as the verification signal G. Since the delay is added and compensated, the comparison in the signal comparison circuit 14 can be easily performed.

さらに、本実施の形態によれば、比較信号生成回路13は、送信用連続パルス信号Bを制御信号に復元させる復元動作と、信号を遅延させる遅延動作とを実行し、復元動作では、制御信号受信回路31もしくは検証信号受信回路14と同様の動作で送信用連続パルス信号Bを制御信号に復元させ、遅延動作では、制御信号受信回路31もしくは検証信号受信回路12を除く他の回路での遅れ時間(T2+T4+T5+T6もしくはT2+T3+T4+T5)を遅延させる。
この構成により、実際の復元動作を擬似することで、遅延動作での遅れ時間を短くすることができ、遅れ時間の補償をより正確に行うことでできる。
Further, according to the present embodiment, the comparison signal generation circuit 13 executes a restoration operation for restoring the transmission continuous pulse signal B to the control signal and a delay operation for delaying the signal. In the restoration operation, the control signal is further executed. The continuous pulse signal B for transmission is restored to the control signal in the same operation as the receiving circuit 31 or the verification signal receiving circuit 14, and in the delayed operation, the delay in the control signal receiving circuit 31 or other circuits other than the verification signal receiving circuit 12 is delayed. Delay the time (T2 + T4 + T5 + T6 or T2 + T3 + T4 + T5).
With this configuration, the delay time in the delayed operation can be shortened by simulating the actual restoration operation, and the delay time can be compensated more accurately.

さらに、本実施の形態によれば、比較信号生成回路13は、第1トランス20と同様の動作で絶縁伝送を行い、制御信号受信回路31と同様の動作で復元動作を実行し、検証信号送信回路33と同様の動作で変換動作を実行し、第2トランス40と同様の動作で絶縁伝送を行い、検証信号受信回路12と同様の動作で復元動作を実行することで、送信用連続パルス信号Bから比較信号Hを生成する。
この構成により、実際の絶縁動作、復元動作、変換動作を擬似して比較信号Hを生成することができるため、環境や経時変化も加味して遅れ時間の補償をさらに正確に行うことでできる。
Further, according to the present embodiment, the comparison signal generation circuit 13 performs isolated transmission in the same operation as the first transformer 20, executes a restoration operation in the same operation as the control signal receiving circuit 31, and transmits a verification signal. A continuous pulse signal for transmission is executed by executing a conversion operation in the same operation as the circuit 33, performing isolated transmission in the same operation as the second transformer 40, and executing a restoration operation in the same operation as the verification signal receiving circuit 12. The comparison signal H is generated from B.
With this configuration, the comparison signal H can be generated by simulating the actual insulation operation, restoration operation, and conversion operation, so that the delay time can be compensated more accurately in consideration of the environment and changes over time.

以上、本発明を具体的な実施形態で説明したが、上記実施形態は一例であって、本発明の趣旨を逸脱しない範囲で変更して実施できることは言うまでも無い。 Although the present invention has been described above with specific embodiments, it goes without saying that the above-described embodiment is an example and can be modified and implemented without departing from the spirit of the present invention.

1 パワー半導体駆動回路装置
2 マイコン
3 パワー半導体
10 送信側装置
11 制御信号送信回路
12 検証信号受信回路
13 比較信号生成回路
14 信号比較回路
20 第1トランス
30 受信側装置
31 制御信号受信回路
32 ドライブ回路
33 検証信号送信回路
40 第2トランス
1 Power semiconductor drive circuit device 2 Microcomputer 3 Power semiconductor 10 Transmission side device 11 Control signal transmission circuit 12 Verification signal reception circuit 13 Comparison signal generation circuit 14 Signal comparison circuit 20 First transformer 30 Reception side device 31 Control signal reception circuit 32 Drive circuit 33 Verification signal transmission circuit 40 Second transformer

Claims (1)

1次側に入力された制御信号を2次側に絶縁伝送して2次側のパワー半導体を駆動するパワー半導体駆動回路装置であって、
1次側に入力された前記制御信号を入力制御信号として受け付け、絶縁伝送可能な送信用連続パルス信号に変換する制御信号送信回路と、
前記送信用連続パルス信号を1次側から2次側に絶縁伝送する第1トランスと、
2次側に絶縁伝送された前記送信用連続パルス信号を前記制御信号に復元し、復元した前記制御信号を出力制御信号として前記パワー半導体に向けて出力する制御信号受信回路と、
前記出力制御信号を検証信号として絶縁伝送可能な帰還用連続パルス信号に変換する検証信号送信回路と、
前記帰還用連続パルス信号を2次側から1次側に絶縁伝送する第2トランスと、
1次側に絶縁伝送された前記帰還用連続パルス信号を前記検証信号に復元する検証信号受信回路と、
前記第1トランス、前記制御信号受信回路、前記検証信号送信回路、前記第2トランス及び前記検証信号受信回路の遅れ時間を加味した比較信号を前記送信用連続パルス信号から生成する比較信号生成回路と、
前記検証信号受信回路によって復元された前記検証信号と前記比較信号生成回路によって生成された前記比較信号とを比較することでエラー検知を行う信号比較回路と、を具備し、
前記比較信号生成回路は、前記第1トランスと同一構成の擬似第1トランスによって前記第1トランスと同様の動作で絶縁伝送を行い、前記制御信号受信回路と同一構成の擬似制御信号受信回路によって前記制御信号受信回路と同様の動作で復元動作を実行し、前記検証信号送信回路と同一構成の擬似検証信号送信回路によって前記検証信号送信回路と同様の動作で変換動作を実行し、前記第2トランスと同一構成の擬似第2トランスによって前記第2トランスと同様の動作で絶縁伝送を行い、前記検証信号受信回路と同一構成の擬似検証信号受信回路によって前記検証信号受信回路と同様の動作で復元動作を実行することで、前記送信用連続パルス信号から前記比較信号を生成することを特徴とするパワー半導体駆動回路装置。
A power semiconductor drive circuit device that drives a power semiconductor on the secondary side by insulatingly transmitting a control signal input to the primary side to the secondary side.
A control signal transmission circuit that receives the control signal input to the primary side as an input control signal and converts it into a continuous pulse signal for transmission that can be isolated and transmitted.
A first transformer that insulates and transmits the continuous pulse signal for transmission from the primary side to the secondary side, and
A control signal receiving circuit that restores the transmission continuous pulse signal isolated and transmitted to the secondary side to the control signal and outputs the restored control signal as an output control signal to the power semiconductor.
A verification signal transmission circuit that converts the output control signal into a continuous pulse signal for feedback that can be isolated and transmitted as a verification signal.
A second transformer that insulates and transmits the feedback continuous pulse signal from the secondary side to the primary side,
A verification signal receiving circuit that restores the feedback continuous pulse signal isolated and transmitted to the primary side to the verification signal, and
A comparison signal generation circuit that generates a comparison signal from the transmission continuous pulse signal in consideration of the delay time of the first transformer, the control signal reception circuit, the verification signal transmission circuit, the second transformer, and the verification signal reception circuit. ,
A signal comparison circuit that detects an error by comparing the verification signal restored by the verification signal receiving circuit with the comparison signal generated by the comparison signal generation circuit is provided .
The comparison signal generation circuit performs isolated transmission in the same operation as the first transformer by a pseudo first transformer having the same configuration as the first transformer, and the pseudo control signal receiving circuit having the same configuration as the control signal receiving circuit. The restoration operation is executed in the same operation as the control signal receiving circuit, the conversion operation is executed in the same operation as the verification signal transmitting circuit by the pseudo verification signal transmitting circuit having the same configuration as the verification signal transmitting circuit, and the second transformer is used. Insulation transmission is performed by the pseudo second transformer having the same configuration as the second transformer in the same operation as the second transformer, and the restoration operation is performed by the pseudo verification signal receiving circuit having the same configuration as the verification signal receiving circuit in the same operation as the verification signal receiving circuit. A power semiconductor drive circuit device, characterized in that the comparison signal is generated from the continuous pulse signal for transmission by executing the above .
JP2016195481A 2016-10-03 2016-10-03 Power semiconductor drive circuit device Active JP6825294B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2016195481A JP6825294B2 (en) 2016-10-03 2016-10-03 Power semiconductor drive circuit device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2016195481A JP6825294B2 (en) 2016-10-03 2016-10-03 Power semiconductor drive circuit device

Publications (2)

Publication Number Publication Date
JP2018061080A JP2018061080A (en) 2018-04-12
JP6825294B2 true JP6825294B2 (en) 2021-02-03

Family

ID=61910155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2016195481A Active JP6825294B2 (en) 2016-10-03 2016-10-03 Power semiconductor drive circuit device

Country Status (1)

Country Link
JP (1) JP6825294B2 (en)

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000278362A (en) * 1999-03-23 2000-10-06 Toshiba Corp Data communication test device
JP5253012B2 (en) * 2008-06-24 2013-07-31 ローム株式会社 Power semiconductor drive circuit device and signal transmission circuit device used therefor
EP2498460A1 (en) * 2009-11-05 2012-09-12 Rohm Co., Ltd. Signal transmission circuit device, semiconductor device, method and apparatus for inspecting semiconductor device, signal transmission device, and motor drive apparatus using signal transmission device
JP5947633B2 (en) * 2012-06-22 2016-07-06 ローム株式会社 Signal transmission circuit, integrated circuit, and electrical equipment including the same

Also Published As

Publication number Publication date
JP2018061080A (en) 2018-04-12

Similar Documents

Publication Publication Date Title
US8040161B2 (en) Drive circuit device for a power semiconductor, and signal transfer circuit device for use therein
US9287793B2 (en) Isolated power supply, control signal transmission circuit and method thereof
US9800140B2 (en) High efficiency bridgeless power factor correction converter for converting input alternating current into output direct current
US8054654B2 (en) Electrically insulated switching element driver and method for controlling same
JP6382739B2 (en) DCDC converter
JP2019103136A5 (en)
KR101751114B1 (en) Synchronous rectifier and circuit for controlling the same
JP6541280B2 (en) Synchronous rectifier drive method, synchronous rectifier circuit and switching power supply
JP2009100494A (en) Semiconductor device
US10411691B2 (en) Semiconductor device driving circuit
JP2015188297A5 (en)
JP2011078188A (en) Switching power unit
US7773400B2 (en) Inverter driving circuit an inverter control circuit
US8659328B2 (en) Method for transmitting a binary signal via a transformer
JP6825294B2 (en) Power semiconductor drive circuit device
JP2019080433A (en) Synchronous rectification circuit and switching power unit
US20160087540A1 (en) System for information feedback through isolation in power converters
JP5211611B2 (en) Inverter drive circuit and inverter control circuit
JP2009077482A (en) Method for dead-time compensation of voltage inverter
US9231508B2 (en) Motor driver apparatus and method of controlling the same
US20170207702A1 (en) Feedback control circuit and method thereof
JP7068075B2 (en) Signal transduction device
US20140240029A1 (en) Bridge switch control circuit and method of operating the same
JP2010262378A (en) Thyristor type ac power adjustment device
JP6528999B2 (en) Power supply

Legal Events

Date Code Title Description
A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20190920

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20200901

A977 Report on retrieval

Free format text: JAPANESE INTERMEDIATE CODE: A971007

Effective date: 20200831

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20201014

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20201215

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20201228

R150 Certificate of patent or registration of utility model

Ref document number: 6825294

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150