JP6816171B2 - Equipment for post-exposure baking - Google Patents

Description

The present disclosure generally relates to methods and equipment for processing substrates, and more specifically to methods and equipment for performing immersion field guided post-exposure baking processes.

Integrated circuits have evolved into complex devices that can contain millions of components (eg transistors, capacitors, and registers) on a single chip. Photolithography is a process that can be used to form components on a chip. In general, the photolithography process involves several basic steps. First, a photoresist layer is formed on the substrate. The chemically amplified photoresist may include a resist resin and a photoacid generator. The photoacid generator changes the solubility of the photoresist in the developing process when exposed to electromagnetic radiation in subsequent exposure steps. Electromagnetic radiation can have any suitable wavelength, such as, for example, a 193 nm ArF laser, electron beam, ion beam, or other suitable source.

A photomask or reticle can be used to selectively expose a particular area of the substrate to electromagnetic radiation during the exposure phase. The other exposure method may be a maskless exposure method. Since the photoacid generator can be decomposed by exposure to light, it produces an acid, resulting in an image of the potential acid in the resist resin. After exposure, the substrate can be heated in the post-exposure baking process. During the post-exposure baking process, the acid produced by the photoacid generator reacts with the resist resin, altering the solubility of the resist during the subsequent development process.

After post-exposure baking, the substrate, especially the photoresist layer, can be developed and rinsed. Depending on the type of photoresist used, the area of the substrate exposed to electromagnetic radiation can either be resistant to removal or more easily removed. After development and rinsing, the mask pattern is transferred to the substrate using a wet or dry etching process.

The evolution of chip design constantly requires faster, denser circuits. The demand for higher density circuits requires smaller dimensions of integrated circuit components. As the dimensions of integrated circuit components shrink, more elements are required to be placed within a given area on the semiconductor integrated circuit. Correspondingly, the lithographic process must transfer even smaller features onto the substrate, which must be done precisely, accurately and without damage. To transfer features precisely and accurately onto the substrate, high resolution lithography can use a light source that provides short wavelength radiation. Short wavelengths contribute to reducing the minimum printable size on a substrate or wafer. However, short wavelength lithography suffers from problems such as low throughput, increased line edge roughness, and / or reduced resist sensitivity.

In recent developments, photos placed on a substrate before or after the exposure process to modify the chemical properties of a portion of the photoresist layer through which electromagnetic radiation is transmitted in order to improve the exposure / development resolution of lithography. An electrode assembly is used to form an electric field in the resist layer. However, the challenges of implementing such a system have not yet been fully overcome.

Therefore, improved methods and equipment are needed to improve the immersion field guided post-exposure baking process.

In one embodiment, a substrate processing apparatus is provided. The device includes a chamber body that defines a process volume. The major axis of the processing space is oriented vertically and the minor axis of the processing space is oriented horizontally. A movable door is connected to the chamber body and a first electrode is connected to the door. The first electrode is configured to support the substrate on it. The second substrate is connected to the chamber body and at least partially defines the processing space. The first plurality of fluid ports are formed on the side wall of the chamber body adjacent to the treatment space, and the second plurality of fluid ports are formed on the side wall of the chamber body adjacent to the treatment space opposite to the first plurality of fluid ports. It is formed on the side wall.

In another embodiment, a substrate processing apparatus is provided. The device includes a chamber body that defines the processing space and a rotatable pedestal located within the processing space. The fluid supply arm is configured to supply the cleaning fluid to the processing space. The device also includes a shield that can be raised and lowered by a motor and is located radially outside the rotatable pedestal.

In yet another embodiment, a method of processing the substrate is provided. The method comprises positioning the substrate adjacent to the processing space of the processing chamber and supplying the processing fluid to the processing space at a first flow rate. After a part of the processing space is filled with the processing fluid, the processing fluid is supplied to the processing space at a second flow rate exceeding the first flow rate. After the processing space is completely filled with the processing fluid, the processing fluid is supplied to the processing space at a third flow rate less than the second flow rate. An electric field is generated in the processing space while the processing fluid is supplied to the processing space at the third flow rate.

A more detailed description of the present disclosure briefly summarized above is obtained by reference to embodiments so that the above features of the present disclosure can be understood in detail. Shown in the attached drawing. However, it should be noted that the accompanying drawings merely illustrate exemplary embodiments and should therefore not be considered limiting the scope of the present disclosure, and other equally valid embodiments may be acceptable.

A schematic cross-sectional view of a processing chamber according to an embodiment described herein is shown. A detailed view of a portion of the processing chamber of FIG. 1 according to the embodiments described herein is shown. A schematic side view of the various components of the processing chamber of FIG. 1 according to the embodiments described herein is shown. The post-treatment chamber according to the embodiment described herein is shown. The steps of a method for processing a substrate according to the embodiments described herein are shown.

For ease of understanding, the same reference numbers were used to indicate the same elements common to the figures, where possible. It is assumed that the elements and features of one embodiment can be beneficially incorporated into other embodiments without further description.

FIG. 1 shows a schematic cross-sectional view of the processing chamber 100 according to the embodiments described herein. In one embodiment, the processing chamber 100 is configured to perform immersion field guided post-exposure bake (iFGPEB) processing. The chamber 100 is positioned vertically such that the major axis of the substrate is vertically oriented and the minor axis of the substrate is horizontally oriented when the substrate is being processed. The chamber 100 includes a chamber body 102 made of metal materials such as aluminum, stainless steel, and alloys and combinations thereof. Alternatively, the chamber body 102 is made from a polymeric material such as polytetrafluoroethylene (PTFE) or a hot plastic such as polyetheretherketone (PEEK).

The body 102 defines a processing space 104, at least in part, therein. For example, the side wall 148 of the body 102 defines the diameter of the processing space 104. The major axis of the processing space 104 is vertically oriented and the minor axis of the processing space 104 is horizontally oriented. A first plurality of fluid ports 126 are formed in the chamber body 102 through the side wall 148. The second plurality of fluid ports 128 are also formed on the side wall 148 of the chamber body 102 opposite to the first plurality of fluid ports 126. The first plurality of fluid ports 126 are fluidly connected to the processing fluid source 132 via the first conduit 134. The second plurality of fluid ports 128 are fluidly connected to the fluid outlet 136 via the second conduit 138. The processing fluid source 132, alone or in combination with other equipment, preheats the processing fluid to a temperature between about 70 ° C. and about 130 ° C., for example about 110 ° C., before the fluid enters the processing space 104. It is composed of.

In one embodiment, the purge gas source 150 is also fluid connected to the processing space 104 via a first fluid conduit 134 and a first plurality of fluid ports 126. The gas provided by the purge gas source 150 may include nitrogen, hydrogen, an inert gas, etc. to purge the treatment space 104 during or after the iFGPEB treatment. If desired, the purge gas can be discharged from the treatment space 104 via the fluid outlet 136.

The door 106 is operably connected to the chamber body 102. In the illustrated embodiment, the door 106 is located adjacent to the chamber body 102 and oriented at the processing position so as to abut the chamber body 102. The door 106 is formed from a material similar to the material selected for the chamber body 102. Alternatively, the chamber body may be formed from a first material, such as a polymeric material, and the door 106 may be formed from a second material that is different from the first material, such as a metallic material. The shaft 107 extends through the door 106 and provides an axis (ie, the Z-axis) through which the door 106 rotates to open and close the door 106.

The door 106 may be connected to a track (not shown) and the door 106 is configured to translate along the X-axis track. A motor (not shown) may be connected to the door 106 and / or the truck to facilitate movement of the door 106 along the X axis. Although the door 106 is shown in the closed processing position, opening and closing of the door 106 is performed by separating the door 106 from the chamber body 102 along the X axis before rotating the door 106 around the Z axis. sell. For example, the door 106 is about 90 ° from the illustrated processing position to the loading position so that the substrate 110 can be positioned on the first electrode 108 while reducing the possibility of the substrate being damaged during loading. Can rotate.

The backing plate 112 is connected to the door 106, and the first electrode 108 is connected to the backing plate 112. The backing plate 112 is made of a material similar to the door 106 or chamber body 102, depending on the desired embodiment. The first electrode 108 may be formed of a conductive metal material. Further, the material used for the first electrode 108 can be a non-oxidizing material. The material selected for the first electrode 108 provides the desired current uniformity and low resistance over the surface of the first electrode 108. In certain embodiments, the first electrode 108 is a segment electrode configured to introduce voltage heterogeneity over the surface of the first electrode 108. In this embodiment, a plurality of power sources are used to power different segments of the first electrode 108.

The first electrode 108 is sized to accommodate the mounting of the substrate 110 on it. The first electrode 108 is also sized so that it can be positioned adjacent to the chamber body 102 and the processing space 104. In one embodiment, the first electrode 108 is fixably connected to the backing plate 112 and the door 106. In another embodiment, the first electrode 108 is rotatably connected to the backing plate 112 and the door 106. In this embodiment, the motor 109 is connected to the door 106 and is configured to give rotational motion to either the backing plate 112 or the first electrode 108. In one embodiment, the first electrode 108 is configured as a ground electrode.

The vacuum source 116 is fluidly connected to the substrate receiving surface of the first electrode 108. The vacuum source 116 is connected to a conduit 114 extending from the vacuum source 116 through a door 106, a backing plate 112, and a first electrode 108. Generally, the vacuum source 116 is configured to vacuum chuck the substrate 110 to the first electrode 108.

A heat source 118, a temperature sensing device 120, a power supply 122, and a sensing device 124 are connected to the first electrode 108. The heat source 118 supplies power to one or more heating elements, such as a resistor heater, located within the first electrode 108. It is also conceivable that the heat source 118 may supply power to the heating elements arranged in the backing plate 112. The heat source 118 is generally configured to heat either the first electrode 108 and / or the backing plate 112 to facilitate preheating of the fluid during the iFGPEB process. The heat source 118 can also be utilized in addition to, or in contrast to, preheating the processing fluid to maintain the desired temperature of the processing fluid during substrate processing. In one embodiment, the heat source 118 is configured to heat the first electrode 108 to a temperature of about 70 ° C to about 130 ° C, such as about 110 ° C.

A temperature sensing device 120, such as a thermocouple, is communicably coupled to a heat source 118 to provide temperature feedback and facilitate heating of the first electrode 108. The power supply 122 is configured to supply the first electrode 108, for example, between about 1 V and about 20 kV. Depending on the type of processing fluid used, the current generated by the power supply 122 can be on the order of tens of nanoamps to hundreds of milliamps. In one embodiment, the power supply 122 is configured to generate an electric field in the range of about 1 kV / m to about 2 MV / m. In some embodiments, the power supply 122 is configured to operate in either voltage control mode or current control mode. In both modes, the power supply can output AC, DC, and / or pulsed DC waveforms. Square or sine waves can be used if desired. The power supply 122 may be configured to supply power between about 0.1 Hz and about 1 MHz, for example at a frequency such as about 5 kHz. The duty cycle of pulsed DC or AC power can be between about 5% and about 95%, for example between about 20% and about 60%.

The rise and fall times of the pulsed DC or AC power can be between about 1 ns and about 1000 ns, such as between about 10 ns and about 500 ns. A sensing device 124, such as a voltmeter, is communicably coupled to a power source 122 to provide electrical feedback and facilitate control of the power applied to the first electrode 108. The sensing device 124 may also be configured to sense the current applied to the first electrode 108 via the power supply 122.

The second electrode 130 is connected to the chamber body 102 adjacent to the processing space 104 and partially defines the processing space 104. Similar to the first electrode 108, the second electrode 130 is connected to the heat source 140, the temperature sensing device 142, the power supply 144, and the sensing device 146. The heat source 140, the temperature sensing device 142, the power source 144, and the sensing device 146 can function similarly to the heat source 118, the temperature sensing device 120, the power source 122, and the sensing device 124. In one embodiment, the second electrode 130 is an electrode that is actively powered and the first electrode 108 is a ground electrode. As a result of the electrode placement described above, the acid generated during exposure of the resist placed on the substrate 110 can be modulated during the iFGPEB process to improve patterning and resist protection release properties.

FIG. 2 shows a detailed view of a portion of the processing chamber 100 of FIG. 1 according to the embodiments described herein. The processing space 104 has a width 214 defined between the substrate 110 and the second electrode 130. In one embodiment, the width 214 of the processing space 104 is between about 1.0 mm and about 10 mm, such as between about 4.0 mm and about 4.5 mm. The relatively small gap between the substrate 110 and the second electrode 130 reduces the volume of the treatment space 104 and makes available the amount of treatment fluid reduced during the iFGPEB treatment. In addition, the width 214 defining the distance between the second electrode 130 and the substrate is configured to provide a substantially uniform electric field over the surface of the substrate 110. A substantially uniform electric field provides improved patterning properties as a result of iFGPEB treatment. Another advantage of the gap having a width of 214 is the reduction of the voltage used to generate the desired electric field.

During operation, the processing space 104 is filled with the processing fluid during the iFGPEB processing. Multiple O-rings are utilized to maintain the integrity of the fluid containment in the processing space in order to reduce the possibility of the processing fluid leaking out of the processing space. The first O-ring 202 is arranged in the first electrode 108 on the substrate receiving surface of the first electrode 108. The first O-ring 202 may be positioned on the first electrode that is radial inward from the outer diameter of the substrate 110.

In one example, the first O-ring 202 is positioned radially inward from the outer diameter of the substrate 110 on the first electrode 108 at a distance between about 1 mm and about 10 mm. The first O-ring is positioned so that it contacts the back side of the substrate 110 when the substrate is chucked by the first electrode 108. The first surface 206 of the side wall 148 is shaped and sized to contact the edge region of the substrate 110 when the substrate 110 is in the illustrated processing position.

In one embodiment, the first O-ring 202 is located within the first electrode 108 opposite the first surface 206 of the side wall 148. It is considered that the first O-ring 202 can prevent the processing fluid from leaking from the processing space 104 to the region behind the substrate 110 such as the substrate supporting surface of the first electrode 108. Advantageously, the vacuum chuck of the substrate 110 is maintained to prevent the processing fluid from reaching the vacuum source 116.

The first electrode 108 has a ledge 210 located radially outside the first O-ring. The ledge 210 is arranged radially outward from the position of the first O-ring 202. The second O-ring 204 is connected to the first electrode 108 on the radial outside of the ledge 210. The shape and size of the second surface 208 of the side wall 148 are determined so as to be adjacent to the outer diameter of the first electrode 108 and to be in contact with the first electrode 108 extending radially inward from the outer diameter. In one embodiment, the second O-ring 204 is placed in contact with the second surface 208 of the side wall 148 when the substrate 110 is placed in the processing position. It is considered that the second O-ring 204 can prevent the processing fluid from leaking from the processing space 108 beyond the outer diameter of the first electrode 108.

The third O-ring 212 is connected to the second electrode 130 along the outer diameter of the second electrode 130. The third O-ring 212 is also placed in contact with the side wall 148 of the chamber body 102. The third O-ring 212 is configured to prevent the processing fluid from flowing behind the second electrode 130. Each of the O-rings 202, 204, 212 is formed from an elastomeric material such as a polymer. In one embodiment, the O-rings 202, 204, 212 have a circular cross section. In another embodiment, the O-rings 202, 204, 212 have a non-circular cross section, such as a triangular cross section. Further, each of the O-rings 202, 204, and 212 is prevented from passing the processing fluid beyond the O-rings 202, 204, and 212, and receives a compressive force suitable for fluidly sealing the processing space 104. It is also possible.

FIG. 3 shows a schematic side view of the various components of the processing chamber 100 of FIG. 1 according to the embodiments described herein. The processing space 104 is shown together with the first plurality of fluid ports 126 and the second plurality of fluid ports 128 formed therein. The first plurality of channels 302 are connected between the first plurality of fluid ports 126 and the first conduit 134. The second plurality of channels 304 are connected between the second plurality of fluid ports 128 and the second conduit 138.

Although 10 of the first plurality of channels 302 are shown, it can be performed between about 5 channels and about 30 channels, eg, between about 9 channels and about 21 channels. Conceivable. Similarly, it can be utilized for a second plurality of channels 304 between about 5 channels and about 30 channels, for example, between about 9 channels and about 21 channels. The number of channels 302, 304 is selected to allow an appropriate fluid flow rate during filling of the processing space 104. The channels 302, 304 are also configured to maintain the rigidity of the processing space 104 when the first electrode 108 and the substrate 110 are positioned with respect to the first surface 206 of the chamber body 102. In one embodiment, the first channel 302 of 9 and the second channel 304 of 9 are connected to the processing space 104. In another embodiment, the first channel 302 of 21 and the second channel 304 of 21 are connected to the first processing space 104.

The first plurality of channels 302 and the second plurality of channels 304 are formed in the main body 102 of the processing chamber 100. Each of the first plurality of channels 302 and the second plurality of channels 304 is about 3.0 mm to about 3.5 mm, for example about 3.2 mm, at the first fluid port 126 and the second fluid port 128, respectively. Has a diameter of. In another embodiment, the diameter of each channel along the diameter of the processing space 104 is different. In one embodiment, the channels of the first plurality of channels 302 are evenly spaced over the diameter of the processing space 104. Similarly, the channels of the second plurality of channels 304 are evenly spaced over the diameter of the processing space 104. Further, it is considered that the channels of the first plurality of channels 302 and the second plurality of channels 304 may be unevenly separated over the diameter of the processing space 104.

The channel spacing of the first plurality of channels 302 and the second plurality of channels 304 is configured to reduce the turbulence of the processing fluid in and out of the processing space 104. Turbulence creates bubbles in the processing fluid, which then act as an insulator in the applied electric field, so measures are taken to reduce the formation of bubbles. As described in detail below, the flow rate of the processing fluid is adjusted in combination with the design of the first plurality of channels 302 and the second plurality of channels 304 in order to reduce turbulence.

The processing fluid flow path begins at the processing fluid source 132 and proceeds through the first conduit 134 to the first plurality of channels 302. The fluid exits the first plurality of channels 302 and enters the processing space 104 via the first fluid port 126. Once the processing space 104 is filled with the processing fluid, the processing fluid exits the processing space 104 and enters the second plurality of channels 304 via the second fluid port 128. The processing fluid continues into the second conduit 138 and is finally removed from the processing chamber 100 in the fluid outlet 136.

In one operable embodiment, the first flow rate utilized to fill the processing space 104 with the processing fluid prior to activation of the electric field is between about 5 L / min and about 10 L / min. .. Once the processing fluid is filled in the processing space 104, an electric field is applied and a second flow rate of processing fluid between about 0 L / min and about 5 L / min is utilized during the iFGPEB process. The treatment fluid filling and treatment time is between about 30 seconds and about 90 seconds, such as about 60 seconds. In one embodiment, the treatment fluid continues to flow during the iFGPEB treatment. In this embodiment, the volume of the processing space 104 is exchanged between about 1 and about 10 times per substrate to be processed. In another embodiment, the processing fluid is largely stationary during processing. In this embodiment, the volume of the processing space 104 is not exchanged during substrate processing of each substrate.

In another operable embodiment, a first flow rate is utilized to fill the processing space 104 first. The first flow rate is less than 5 L / min in the time to fill the processing space 104 so that the first fluid port 126 is submerged. A second flow rate of more than 5 L / min is then utilized to fill the rest of the processing space 104. A third flow rate of less than 5 L / min is utilized while applying an electric field in the iFGPEB process. The flow rate modulation between the first flow rate and the second flow rate is configured to reduce the turbulence of the fluid in the processing space 104 and reduce or eliminate the formation of bubbles in it. However, when bubbles are formed, the buoyancy of the bubbles allows them to escape from the processing space 104 through the second fluid port 128, thereby providing an insulating effect on the electric field during iFGPEB processing. It is minimized. Therefore, a more uniform electric field can be achieved to improve the iFGPEB process.

FIG. 4 shows a post-treatment chamber 400 according to an embodiment described herein. After iFGPEB processing the substrate in the processing chamber 100, the substrate is transported to the post-processing chamber 400. The post-processing chamber 400 includes a chamber body 402 that defines the processing space 404 and a pedestal 408 that is located within the processing space 404. The substrate 406 positioned on the pedestal 408 is post-processed by cooling and rinsing the substrate 406. The combination of cooling and rinsing minimizes the baking-to-cooling delay of substrate processing.

When the substrate 406 is positioned on the pedestal 408, the substrate is vacuum chucked by applying vacuum from the vacuum source 414. Once the substrate 406 is chucked, cooling of the substrate 406 begins. A fluid conduit 410 is formed within the pedestal 408, which fluidly connects with the cooling fluid source 412. The cooling fluid flows through the fluid conduit 410 to cool the substrate 406.

During cooling, the substrate 406 is also rinsed to remove any residual processing fluid still present on the substrate surface. The cleaning liquid is distributed from the fluid supply arm 418, which may include the fluid supply nozzle 420, to the device side of the substrate 406. Rinse fluid, such as deionized water, is supplied from the rinse fluid source 422 via the arm 418 and nozzle 420.

After cleaning and cooling, the substrate 406 is spin dried by rotating the pedestal 408. The pedestal 408 is connected to a power supply 416 that makes the pedestal 408 rotatable. During spin drying of substrate 406, the shield 424 rises to collect the fluid shaken off of substrate 406. The shield 424 is ring-like in size and has an inner diameter larger than the diameter of the pedestal 408. The shield 424 is also located radially outside the pedestal 408. The shield 424 is connected to a motor 428 that raises and lowers the shield 424 so as to extend above the substrate 406 during spin drying. The fluid collected by the shield 424 during spin drying is removed from the processing space 404 via the drain 426. It should be noted that during cooling and rinsing of substrate 406, the shield 424 may be placed in the descending position and subsequently elevated during spin drying of substrate 406. The shield 424 may also be lowered during loading and unloading of substrate 406.

Once the substrate 406 has been dried, the resist on the substrate 406 is developed by applying a developer such as tetramethylammonium hydroxide (TMAH). In one embodiment, the developer is distributed from the arm 418 and nozzle 420. After development, the substrate 406 may optionally be rinsed with deionized water and dried again to prepare the substrate 406 for the next process.

FIG. 5 shows the steps of method 500 for processing a substrate according to the embodiments described herein. In step 510, the substrate is positioned adjacent to or within the processing space of the processing chamber, such as the processing chamber 100. In step 520, the treatment space is filled with the treatment fluid, and in step 530, iFGPEB treatment is performed. In step 540, the treatment fluid is removed from the treatment space, and in step 550, the substrate is transferred to a post-treatment chamber such as the post-treatment chamber 400. Optionally, the substrate may be spin dried during step 540 to prevent the processing fluid from spilling during substrate handling.

In step 560, the substrate is rinsed with a cleaning fluid to remove the processing fluid from the substrate. Step 560 may also include spin drying of the substrate in certain embodiments. In step 570, the resist placed on the substrate is developed, and in step 580, the substrate is rinsed again with the cleaning fluid. In step 590, the substrate is spin dried and prepared for subsequent processing.

In summary, devices and methods for improving iFGPEB processing are provided. The processing chambers described herein allow efficient use of processing fluids and improved electric field application during iFGPEB operation. Substrate post-treatment is also improved by reducing the cool delay from baking by utilizing equipment that allows simultaneous cooling and rinsing operations. Therefore, the iFGPEB processing operation can be improved by utilizing the devices and methods described herein.

Although the above description is intended for the embodiments of the present disclosure, other embodiments and further embodiments of the present disclosure may be devised without departing from the basic scope of the present disclosure, and the scope of the present disclosure. Is determined by the following claims.

Claims (16)

A chamber body that defines a processing space, wherein the major axis of the processing space is vertically oriented and the minor axis of the processing space is horizontally oriented.
A movable door connected to the chamber body and
A first electrode that is connected to the door and configured to hold the substrate vertically oriented on it.
A second electrode that is connected to the chamber body and at least partially defines the processing space.
A plurality of first fluid ports formed on the side wall of the chamber body adjacent to the processing space,
A second plurality of fluid ports formed on the side wall of the chamber body adjacent to the processing space on the opposite side of the first plurality of fluid ports .
Includes sealing means for maintaining the integrity of fluid containment in the processing space while the substrate is held on the first electrode and the door is connected to the chamber body. Substrate processing equipment. The device according to claim 1, further comprising a backing plate disposed between the first electrode and the door. The apparatus according to claim 1, further comprising a processing fluid source that fluidly connects to the processing space via the first plurality of channels and the first plurality of fluid ports. The apparatus according to claim 3, further comprising a fluid outlet that fluidly connects to the processing space via the second plurality of channels and the second plurality of fluid ports. The device according to claim 3, wherein 21 of the first plurality of channels are formed in the chamber body. The device of claim 4, wherein 21 of the second plurality of channels are formed within the chamber body. The apparatus according to any one of claims 1 to 6, wherein the first electrode is configured to vacuum-chuck a substrate on the substrate. The device according to claim 7, wherein the vacuum source is fluidly connected to the first electrode. The apparatus according to any one of claims 1 to 8, wherein the chamber body is formed of polytetrafluoroethylene. The apparatus according to any one of claims 1 to 9, wherein the first plurality of fluid ports are uniformly dispersed over the diameter of the processing space. 10. The apparatus of claim 10, wherein the second plurality of fluid ports are uniformly dispersed over the diameter of the processing space. The apparatus according to any one of claims 1 to 11, wherein the width of the processing space is between 4.0 mm and 4.5 mm. Said sealing means, coupled to said first electrode, O-ring including being positioned to contact the back side of the substrate adjacent to the outer diameter of the substrate, any one of claims 1 to 12 The device described in. Said sealing means, adjacent the outer diameter of the first electrode is connected to the first electrode, O-ring including contacting the surface of the sidewall of the chamber body, any of claims 1 to 13 The device according to item 1. Said sealing means, coupled to said outer diameter of the second electrode, the O-ring including being positioned in contact with the side wall of the chamber body, according to any one of claims 1 14 .. A method for processing a substrate in the apparatus according to any one of claims 1 to 15.
And positioning fraud and mitigating risk the substrate adjacent to the processing space on the first electrode connected to said door coupled to the chamber body,
Supplying the processing fluid to the processing space at a first flow rate of less than 5 L / min
After filling a part of the processing space with the processing fluid, supplying the processing fluid to the processing space at a second flow rate exceeding 5 L / min.
After the treatment space is completely filled with the treatment fluid, the treatment fluid is supplied to the treatment space at a third flow rate of less than 5 L / min.
How and generating an electric field in the processing space between the third between supplying the processing fluid into the processing space at a flow rate, wherein the first electrode and the second electrode.

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