JP6787435B2 - Light emitting device - Google Patents

Description

The present disclosure relates to a light emitting device.

Conventionally, a light emitting device configured to emit white light by using a light emitting element that emits blue light and a fluorescent substance that is excited by absorbing a part of the blue light and emits light having a longer wavelength is known. ing. In such a light emitting device, there is known a light emitting device in which a plurality of light emitting elements are placed on a substrate, the elements are connected by wires, and the light emitting devices are coated with a sealing resin containing a phosphor (for example, a patent). Document 1).

Japanese Unexamined Patent Publication No. 2012-79855

However, according to the conventional light emitting device (Patent Document 1), since the light emitting diameter is large, it is difficult to apply it to lighting for narrow-angle light distribution applications such as a floodlight. When the light emitting diameter is reduced, the number of light emitting elements is reduced, and there is a problem that the required luminous intensity and luminous flux are not met.

The present disclosure has been made in view of such circumstances, and is characterized by providing a light emitting device having a small light emitting diameter and a high luminous flux.

The light emitting device of the present disclosure includes a substrate, a conductive member formed on the surface of the substrate, and a first light emitting element and a second light emitting element connected to the conductive member, and the conductive member is the first light emitting element. The first land and the second land corresponding to the pair of electrodes of the one light emitting element, the third land and the fourth land corresponding to the pair of electrodes of the second light emitting element, the second land and the third land. The first land and the third land, the second land and the fourth land are arranged adjacent to each other, and the outer edge of the first land is the first land. It is located inside the point where the side located on the 2nd land side and the side located on the 3rd land side intersect, and the 4th land side is located.
The outer edge of the land is a light emitting device characterized in that it is located inside the point where the side located on the second land side and the side located on the third land side intersect.
Further, the substrate of the present disclosure is a substrate for a light emitting device provided with a conductive member for connecting a plurality of light emitting elements on the surface, and the conductive member corresponds to a pair of electrodes of the first light emitting element. It has 1 land and 2nd land, 3rd land and 4th land corresponding to a pair of electrodes of the 2nd light emitting element, and a connecting portion for connecting the 2nd land and the 3rd land. The first land and the third land, the second land and the fourth land are arranged adjacent to each other, and the outer edge of the first land is a side located on the second land side and the third land. It is located inside the point where the sides located on the land side intersect, and the outer edge of the fourth land is inside the point where the side located on the second land side and the side located on the third land side intersect. It is a substrate characterized by being located in.

According to the present disclosure, it is possible to realize a light emitting device having a small light emitting diameter and a high luminous flux and a substrate for the light emitting device by having the above characteristics.

Schematic structural diagram showing an example of the light emitting device of the present disclosure Enlarged view of a part of the light emitting device of the present disclosure Schematic structural diagram showing an example of the light emitting device of the present disclosure Schematic structural diagram and sectional view showing an example of the light emitting device of the present disclosure. Enlarged sectional view of a part of the light emitting device of the present disclosure

Hereinafter, embodiments of the present disclosure will be described with reference to the drawings as appropriate. However, the light emitting device described below is for embodying the technical idea of the present disclosure, and the present disclosure is not limited to the following unless otherwise specified. Further, the contents described in one embodiment and the embodiment can be applied to other embodiments and the embodiments.
The size and positional relationship of the members shown in each drawing may be exaggerated for the sake of clarity. In the figure, the "x" direction is also called the "horizontal" direction, the "y" direction is also called the "vertical" direction, and the "z" direction is also called the "vertical" direction or the "height (thickness)" direction.

FIG. 1 is a schematic structural diagram showing an example of the light emitting device of the present embodiment, and FIG. 2 shows that the frame body 130, the sealing member 132, and the light emitting element are not removed from the light emitting device of FIG. 1 for easy explanation. It is a display.
As shown in FIGS. 1 and 2, the light emitting device 100 of the present embodiment includes a substrate 102 and a substrate 1.
The conductive member 104 formed on the surface of 02 and the first light emitting element 1 connected to the conductive member 104.
20 and a second light emitting element 122 are provided.

FIG. 3 is an enlarged view of the vicinity of the first light emitting element 120 and the second light emitting element 122.
As shown in FIG. 3, the conductive member 104 has a first land 11 and a second land 12 corresponding to a pair of electrodes of the first light emitting element 120, and a third land corresponding to a pair of electrodes of the second light emitting element 122.
It has a land 13 and a fourth land 14. In addition, in FIG. 2, the first light emitting element 12
Only the outer edges of 0 and the second light emitting element 122 are shown for ease of explanation.
The land shape is shown so that it can be seen through the light emitting element.

In order to electrically connect the first light emitting element 120 and the second light emitting element 122, the conductive member 104
Further has a connecting portion 15 for connecting the second land 12 and the third land 13.
Further, the 1st land 11 and the 3rd land 13, the 2nd land 12 and the 4th land 14 are arranged adjacent to each other, and the 1st land 11 and the 4th land 14 and the 2nd land 12 and the 3rd land are arranged adjacent to each other. 13 is arranged so as to face each other with the connecting portion 15 interposed therebetween.

As shown in FIG. 3, the outer edges of the first land 11, the second land 12, the third land 13 and the fourth land 14, respectively, have straight lines extending in the x direction and the y direction.
Further, the connecting portion 15 has a side E and a side F at its outer edge so as to be oblique with respect to the x direction and the y direction. Side E and side F are substantially parallel to each other, and the second land 1 has a constant width.
The corners of No. 2 and the third land 13 are connected.

Further, all of the outer edges of the first land 11 are located inside the point C where the side A located on the second land 12 side and the side B located on the third land 13 side intersect. In this embodiment, the side A and the side B are straight lines. From another point of view, the outer edge of the first land 11 is formed from a plurality of straight lines, and the corner of the portion adjacent to the connecting portion 15 is chamfered. The side D formed by chamfering in this way is formed diagonally with respect to the side A and the side B, and the side D is substantially parallel to the side E and the side F of the connecting portion close to the side D. It is arranged like this.

Similarly, all of the outer edges of the fourth land 14 have sides located inside the point I where the side located on the second land 12 side and the side located on the third land 13 side intersect. ..

In order to reduce the light emitting diameter and maintain a high luminous flux, it is necessary to mount a necessary number of light emitting elements at a high density in order to obtain a desired luminous flux. Further, in order to obtain a high luminous flux, it is necessary to have a structure capable of passing a larger current. Therefore, it is preferable to use flip-chip mounting which has high heat dissipation and can be mounted at a narrow pitch.

In the present embodiment, a pair of positive and negative electrodes of the first light emitting element 120, and the first land 11 and the second
The land 12 is electrically connected by mounting the land 12 on a flip chip via a joining member. Here, it is preferable that the planar shape of the pair of electrodes of the first light emitting element 120 substantially matches the planar shape of the first land 11 and the second land 12. FIG. 4 illustrates a light emitting element that can be used in this embodiment. As shown in FIG. 4, the shape of the pair of electrodes of the light emitting element is substantially the same as the shape of the land. As a result, when the light emitting element is reflow-mounted using solder or the like, the land and the electrode can be easily aligned by using the self-alignment effect. Since the alignment accuracy can be improved, high-density mounting becomes possible.

On the other hand, in the case of flip-chip mounting, since wires are not used for electrical connection between light emitting elements, it is necessary to establish electrical connection between light emitting elements with a conductive member on the substrate side. In this embodiment, FIG.
And as shown in FIG. 3, the second land 12 and the third land 13 are connected by the connecting portion 15. In the present embodiment, the side D is located so that the outer edge of the first land 11 is located inside the point C where the side A located on the second land 12 side and the side B located on the third land 13 side intersect. Therefore, the lands of the first light emitting element and the second light emitting element can be arranged at a narrow pitch without narrowing the width of the connecting portion 15. The same applies to the fourth land 14.

If the width of the connecting portion 15 is narrowed, there is a risk of fusing or excessive heat generation of the wiring when driving with a high current. Therefore, it is necessary to secure a width of the connecting portion 15 according to the current value to be passed.
Although measures can be taken to prevent fusing by increasing the thickness (length in the z direction) of the connecting portion 15, it is more preferable to increase the width than to increase the plating thickness. Further, although it is possible to embed a metal member inside the substrate, it is not preferable because the number of steps for producing the substrate increases and the structure becomes complicated. In the present embodiment, since a single-layer substrate using a flat plate-shaped insulating member can be used as the substrate 102, the cost of the substrate can be suppressed.

For example, in order to reduce the light emitting diameter and increase the luminous flux, the distance between adjacent light emitting elements is 0.
It is preferably 1 μm to 0.3 μm. Further, the distance between the adjacent first land and third land is preferably 400 μm or less.

Further, from the viewpoint of measures against fusing, for example, the width of the connecting portion 15 is preferably 1/5 or more of the length of one side of the mounted light emitting element.

Hereinafter, a preferred embodiment of the light emitting device 100 according to the present embodiment will be described.

(Board 102)
The substrate 102 is a member that serves as a pedestal on which the first light emitting element 120 and the second light emitting element 122 are placed. From the viewpoint of reducing the cost, it is preferably in the shape of a flat plate made of an insulating member, but it may have a recess in the portion on which the light emitting element is placed.

The material of the substrate 102 is preferably an inorganic member which is a material with little deterioration.
Ceramics are particularly preferable. Examples of the ceramic material include alumina, mullite, forsterite, aluminum nitride (AlN), silicon carbide (SiC), and low-temperature co-fired ceramics (LTCC). Of these, aluminum nitride is preferably used from the viewpoint of enhancing heat dissipation, and it is preferable to use a member having a thermal conductivity of 160 W / m · K or more.

If it is desired to increase the reflectance of the substrate itself, the substrate 102 may be made of alumina, yttria, or the like.
Particles of inorganic materials such as zirconia, titania, diamond, calcium oxide, and barium sulfate may be partially integrated with each other to form a porous material having a large number of voids. As a result, the reflectance can be improved by the difference in refractive index between air and these materials. For example, those having a reflectance of 80% or more at a wavelength of 450 nm are preferable, and those having a reflectance of 85% or more are more preferable.

In addition to ceramics, resin can be used as a material applicable to this embodiment. Examples of such resin materials include aliphatic polyamide resins, semi-aromatic polyamide resins, polyethylene terephthalates, polycyclohexane terephthalates, and liquid crystal polymers.
Thermoplastic resins such as polycarbonate resin, syndiotactic polystyrene, polyphenylene ether, polyphenylene sulfide, polyether sulfone resin, polyether ketone resin, polyarylate resin, polybismaleimide triazine resin, epoxy resin, silicone resin, silicone modified resin, epoxy It may be formed from a thermosetting resin such as a modified resin, a polyimide resin, a polyurethane resin, or a phenol resin.

In the present embodiment, an example in which the substrate 102 has a rectangular outer shape in a plan view has been described, but the present invention is not limited to this, and the substrate 102 may be a square or a polygon. As an example, the outer shape is 24 mm x 19 mm,
The thickness is 1 mm.

(Conductive member 104)
A conductive member 104 is formed on the surface of the substrate 102. The conductive member 104 is a conductive member for supplying electric power to the light emitting element.
As shown in FIG. 2, the conductive member 104 is connected to the first land 11, the second land 12, the third land 13, the fourth land 14, and the connecting portion 15 which are directly bonded to the electrodes of the light emitting element via the bonding member.
Have. Further, a pad portion 110 for applying an external power source is provided at an end portion of the substrate.
A connector may be connected to the pad portion 110, and external power may be supplied via the connector. Further, it has a wiring portion 112 that connects the pad portion 110 and each land.

Since the conductive member 104 absorbs light, it is preferable that the conductive member 104 is formed as small as possible while ensuring a necessary size. Therefore, it is preferable that the portion of the wiring portion 112 that may have a small current capacity is formed to be narrower than the other portions. Specifically, as shown in FIG. 2, the wiring portion 112 is formed so as to have a wide portion 106 and a narrow portion 108 having a width narrower than the wide portion. As a result, light absorption at the wiring portion can be suppressed. In addition, it should be noted
The wide portion 106 is arranged closer to the pad portion 110 than the narrow portion 108.

When ceramics are used as the substrate 102, the conductive member 104 is formed as a metal layer. For example, a metallized layer made of a refractory metal may be formed on the surface of the substrate 102 and the whole may be formed by firing by a cofire method, or various pastes may be applied onto the sintered substrate 102. It may be formed by a post-fire method in which metal films are laminated by sputtering. Further, after forming the metal layer on the surface of the substrate, a pattern may be formed by dry film resist, etching or the like.

Materials for conductive members formed on ceramics include W, Mo, Ti, Ni, Au, and Cu.
, Ag, Pd, Rh, Pt, Sn, etc. as the main component, formed by arranging a metal or alloy layer as a main component on the substrate. Specifically, it can be formed by vapor deposition, sputtering, printing method, etc., and further by plating on it. There is little deterioration, and from the viewpoint of adhesion with the joining member,
It is preferable to use a metal containing Au as a main component for the outermost surface of the conductive member 104.

Further, Cu having high thermal conductivity may be formed thicker than other metals in order to enhance heat dissipation. For example, it is preferable to form a layer containing Cu of 25 μm or more.

When a resin is used as the material of the substrate 102, a metal plate is attached to a semi-cured prepreg of the resin and thermoset, and then the metal plate is patterned into a desired shape by a photolithography method or the like to form a conductive member. Can be formed. In this case as well, the surface may be further plated.

In addition, when forming the conductive member, a mark for positioning and a mark indicating polarity are also used.
A pattern for temperature measurement may be formed at the same time. In this embodiment, as shown in FIG. 1, the anode mark AM, the temperature measurement pattern TP, and the positioning mark 134 are formed.

(Light emitting element)
The light emitting element (first light emitting element 120, second light emitting element 122) is arranged on the substrate 102. The light emitting element is bonded to the substrate 102 via the bonding member and electrically connected to the conductive member 104. As the light emitting element, for example, a semiconductor light emitting element such as an LED element can be used. The light emitting element usually includes a translucent substrate, a semiconductor layer laminated on the translucent substrate, and a pair of positive and negative electrodes provided on the semiconductor layer.

The pair of positive and negative electrodes are formed on the same surface side of the semiconductor laminate (the surface opposite to the translucent substrate if present). As a result, flip-chip mounting can be performed in which the positive and negative lands of the substrate 102 and the positive and negative electrodes of the light emitting element are opposed to each other and joined. In the present embodiment, as shown in FIG. 4, a pair of positive and negative electrodes 140 having substantially the same shape are provided on the same surface of the light emitting element 120. The shape of the electrode 140 is substantially the same as the shape of the first land 11 and the second land 12.

The positive and negative electrodes of the light emitting element are, for example, Au, Pt, Pd, Rh, Ni, W, Mo, Cr,
It can be formed of a single-layer film or a laminated film of Ti or the like or an alloy thereof. Specifically, from the semiconductor layer side, Ti / Rh / Au, W / Pt / Au, Rh / Pt / Au, W / Pt / A.
Examples thereof include laminated films laminated such as u, Ni / Pt / Au, Ti / Rh and the like. The film thickness is
Any film thickness used in the art may be used.

The light emitting element may have a reinforcing layer arranged on the arrangement surface side of the positive and negative electrodes of the nitride semiconductor laminate. The reinforcing layer here may be formed of any material of an insulator, a semiconductor, and a conductor as long as it is a layer capable of reinforcing the strength of the nitride semiconductor laminate. The reinforcing layer is
As a whole, it may be either a single layer or a laminated layer, a single layer or a laminated layer arranged at a plurality of places, or the like.
Further, the reinforcing layer may be a layer for ensuring insulation, conductivity and the like, which are indispensable for the function of the light emitting element. In particular, a part of the film used to form the light emitting element may be thickened. Specifically, the conductive layer that functions as an electrode or the like may be thickened by a known method such as plating or sputtering. The interlayer insulating film, surface protective film, etc. arranged between them may be thickened. As a result, it is possible to prevent the light emitting device from becoming large in size without arranging an additional layer while ensuring an appropriate strength.

The light emitting element may be one that emits ultraviolet light or visible light. When used in a light emitting device that generates white light, the light emitting element preferably has a light emitting wavelength of 400 nm or more and 530 n.
It is preferably a blue light emitting device having m or less, more preferably 420 nm or more and 490 nm or less. A white light emitting device can be obtained by using the blue light emitting element in combination with a yellow phosphor as a wavelength conversion member described later. As the blue light emitting device, a nitride semiconductor (In _x Al _y Ga _1-x-y N, 0 ≦ x, 0 ≦ y, x + y) capable of efficiently exciting a phosphor is used.
A ≦ 1) system light emitting element is particularly preferable. The light emitting element mounted on one light emitting device 100 is 2
More than one. In addition to the light emitting element, a protective element or the like may be provided. The protective element may be connected by a wire or may be flip-chip mounted.

(Joining member)
The joining member is a member that fixes the light emitting element to the conductive member 104 of the substrate 102.
In this case, usually, a pair of positive and negative electrodes of the light emitting element is joined to the above-mentioned land by a joining member. As such a joining member, any material known in the art can be used, and examples thereof include a conductive joining member. Specifically, for example, tin-bismuth type, tin-copper type,
Tin-silver-based, gold-tin-based solder (specifically, an alloy containing Ag, Cu, and Sn as main components, C
Alloys containing u and Sn as main components, alloys containing Bi and Sn as main components, etc.), eutectic alloys (Au)
Alloys containing and Sn as main components, alloys containing Au and Si as main components, alloys containing Au and Ge as main components, etc.) Conductive pastes such as silver, gold, and palladium, bumps, and anisotropic conductivity Examples thereof include brazing materials such as materials and low melting point metals. In particular, by using solder, a highly accurate self-alignment effect can be exhibited in combination with the above-mentioned land shape. Therefore, it becomes easy to mount the light emitting element in a proper place, the mass productivity can be improved, and a smaller light emitting device can be manufactured.

(White resist)
When the substrate 102 is a member that absorbs or transmits light, it is preferable to coat the surface of the substrate with a white resist.
FIG. 5 is a diagram showing a cross section of the substrate 102 on which the light emitting element shown in FIG. 1 is mounted. In the present embodiment, a white resist is formed on the surface of the substrate 10 so as to cover the side surface of the conductive member 104a. Such a white resist is, for example, the substrate 1 on which the conductive member 104a is arranged.
After forming a white resist layer on the 02 so as to cover the conductive member 104a, the conductive member 10
Polish the white resist 142 until the surface of 4a is exposed. As a result, the white resist 1
It is possible to obtain a substrate in which the upper surface of the conductive member 42 and the upper surface of the conductive member 104 coincide with each other and the gap between the conductive member and the conductive member is filled with the white resist 142. Further, by plating the surface of the conductive member 104a, the upper surface of the conductive member can be made higher than the surface of the white resist 142. By setting the upper surface of the land higher than the white resist 142, the light emitting element can be easily mounted. The thickness of the plating layer 104b may be, for example, about 0.2 μm to 10 μm, preferably 1 μm to 5 μm.

The material of the white resist is, for example, a mixture of reflective particles such as TiO ₂ and an organic or inorganic binder. So-called white resist, white ink, ceramic ink, etc. fall under this category.
As the organic binder, it is particularly preferable to use a silicone resin having excellent heat resistance and light resistance. As a result, a light emitting device having high light extraction efficiency can be obtained by reflecting light on the surface of the substrate.

The reflective particles contained in the white resist do not easily absorb the light from the light emitting element and have a large difference in refractive index with respect to the base resin (for example, TiO ₂ , SiO ₂ , Al ₂ O _3).
, ZrO ₂ , K ₄ O ₄ Ti, Al (OH) ₃ , MgO and other inorganic materials) can be dispersed to efficiently reflect light.

The thickness of the white resist is, for example, 20 μm to 60 μm, preferably 30 μm to 40.
It is μm. The white resist may be formed by laminating two or more layers.

The white resist can be formed on the substrate as follows, for example. First, A
A seed layer made of Ti, Ni, etc. is formed on the surface of a substrate such as lN by sputtering, a resist is attached, and an unnecessary portion is covered with a photolithography to obtain a desired shape. A metal layer (for example, Cu) made of a material having high heat dissipation is formed on the metal layer (for example, Cu) by electroplating to about 30 to 40 μm, then the resist is peeled off and the seed layer of the unnecessary part is etched, and white so as to cover these metal layers. Print the resist.
Then, the surface of the white resist is polished to expose the metal layer to the surface. Then, Ni / Pd / Au is formed by electroless plating. As a result, the upper surface of the land can be made higher than the white resist. The conductive portion (seed layer, metal layer, plating layer) formed in this way is referred to as the conductive member 104.
When outgas such as siloxane is generated from the white resist by heating, it is preferable to perform baking after surface polishing to prevent outgas from being generated in a later step.

(Frame body)
As shown in FIG. 1, the frame body 130 is formed in a frame shape on the substrate 102 so as to surround the periphery of the plurality of light emitting elements. The light emitting element is covered with the sealing member by filling the region surrounded by the frame with a sealing member described later.
The frame preferably has light reflectivity. As the frame, for example, it is preferable to use an insulating resin containing a light reflecting member. Further, in order to secure a certain level of strength, for example, a thermosetting resin, a thermoplastic resin or the like can be used. More specifically, phenol resin, epoxy resin, BT resin, PPA, silicone resin and the like can be mentioned. When a non-light emitting device such as a protective element is mounted on a substrate, it causes light absorption, so it is preferable to embed it in a frame having light reflectivity. Such a frame can be formed by a method of drawing while discharging resin with a dispenser, a resin printing method, transfer molding, compression molding, or the like.

When the light reflectance of the frame is higher than the light reflectance of the wiring portion, it is preferable to form the frame so as to cover the wiring portion.

(Seal member 132)
The sealing member 132 is preferably a material that has electrical insulation, is capable of transmitting light emitted from the light emitting element, and has fluidity before solidification. The light transmittance of the sealing member is preferably 70% or more. Examples of the light-transmitting resin include silicone resin, silicone-modified resin, epoxy resin, phenol resin, polycarbonate resin, acrylic resin, and TP.
Examples thereof include an X resin, a polynorbornene resin, and a hybrid resin containing one or more of these resins. Among them, silicone resin is preferable because it has excellent heat resistance and light resistance and has less volume shrinkage after solidification.

(Wavelength conversion member)
The sealing member 132 may include a wavelength conversion member that is excited by at least a part of the light emitted by the light emitting element to emit light having a wavelength different from the emission wavelength of the light emitting element.
Typical wavelength conversion members include phosphors and quantum dots.

(Fluorescent material)
As the phosphor used as the wavelength conversion member, one kind of phosphor may be used, or two or more kinds of phosphors may be used. Any known phosphor may be used as the phosphor for the LED. For example, two types of phosphors having different particle sizes and emission colors, a first phosphor and a second phosphor, may be used. As described above, by using a plurality of types of phosphors having different emission colors, color reproducibility and color rendering properties can be improved.

As the phosphor, for example, as the yellow to green phosphor, for example, an yttrium aluminum garnet type phosphor (YAG type fluorescent material) and a lutetium aluminum garnet type phosphor (LAG type fluorescent material) can be used. .. As the green phosphor, for example, a chlorosilicate phosphor and a β-sialon phosphor can be used. Examples of the red phosphor include a SCASSN-based phosphor such as (Sr, Ca) AlSiN ₃ : Eu, CaAlSi.
N _3: CASN phosphor such as Eu, SrAlSiN _3: Eu phosphor, and _K 2 SiF ₆
: A KSF-based phosphor such as Mn can be used, but the present invention is not limited to this.

The particle size of the phosphor is not particularly limited, but is preferably about 2 μm to 50 μm, and more preferably 5 μm to 20 μm. The larger the particle size of the phosphor, the higher the light extraction efficiency of the light emitting device tends to be, but the color unevenness tends to increase.

The sealing member 132 may further contain additives such as a filler and a diffusing material in addition to the wavelength conversion member described above. For example, SiO ₂ , TiO _{2, and the} like may be used as the diffusing material.

The light emitting device of the present invention includes various display devices such as a backlight source for a liquid crystal display, various lighting fixtures, a large display, an advertisement, and a destination guide, and an image reading device in a digital video camera, facsimile, copier, scanner, or the like. It can be used for projector devices and the like.

100 Light emitting device 102 Substrate 104, 104a Conductive member 104b Plating layer 11 1st land 12 2nd land 13 3rd land 14 4th land 15 Connecting part 106 Wide part 108 Narrow part 110 Pad part 112 Wiring part 120 1st light emitting element 122 Second light emitting element 130 Frame 132 Sealing member 134 Positioning mark 140 Electrode 142 White resist AM Anode mark TP Temperature measurement pattern

Claims (5)

With the board
The conductive member formed on the surface of the substrate and
A white resist layer that covers the side surface of the conductive member and is formed on the surface of the substrate.
A plurality of light emitting elements connected to the conductive member are provided.
The conductive member has a plurality of lands corresponding to the plurality of light emitting elements, and has a plurality of lands.
The upper surface of the white resist layer and the upper surface of the conductive member coincide with each other.
Shielding layer on the upper surface of the conductive member, you have a any metal layer and the plating layer,
The conductive member includes a first land and a second land corresponding to the pair of electrodes of the light emitting element, a third land and a fourth land corresponding to another pair of electrodes of the light emitting element, and the second land. It has a connecting portion for connecting to the third land, and has a connecting portion.
The first land and the third land, and the second land and the fourth land are arranged adjacent to each other.
The outer edge of the first land is located inside the first land from the intersection of the side located on the second land side and the side located on the third land side.
The outer edge of the fourth land is a light emitting device located inside the fourth land from the point where the side located on the second land side and the side located on the third land side intersect . With the board
The conductive member formed on the surface of the substrate and
A white resist layer that covers the side surface of the conductive member and is formed on the surface of the substrate.
A plurality of light emitting elements connected to the conductive member are provided.
The conductive member has a plurality of lands corresponding to the plurality of light emitting elements, and has a plurality of lands.
The upper surface of the white resist layer and the upper surface of the conductive member coincide with each other.
A shield layer, a metal layer, or a plating layer is provided on the upper surface of the conductive member.
The conductive member has a first land and a second land corresponding to the pair of electrodes of the light emitting element, and a third land and a fourth land corresponding to the pair of electrodes of the light emitting element.
A light emitting device in which the first land and the third land, and the second land and the fourth land are arranged adjacent to each other. The light emitting device according to claim 1 or 2 , wherein the conductive member has polishing marks. The light emitting device according to any one of claims 1 to 3, further comprising a frame formed in a frame shape surrounding the plurality of light emitting elements on the substrate. Claim 2 having a connecting portion for connecting the front Stories second land and the third land, the light emitting device according to any one of claims 3 or 4 quoting Claim 2.

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