JP6784176B2 - Wiring structure, electronic device, and manufacturing method of wiring structure - Google Patents

Description

The present invention relates to a wiring structure, an electronic device, and a method for manufacturing the wiring structure.

Conventionally, a wiring recess is provided in an insulating film formed on the surface of a substrate, a wiring material is embedded inside the wiring recess to form a metal film made of the wiring material on the surface of the insulating film, and the wiring recess is formed. There is a wiring forming method for forming wiring by removing excess metal material other than the above and flattening the surface of the substrate.

In the wiring forming method, a first protective film made of a conductive material is selectively formed on the exposed surface of the wiring, and a second protective film is formed on the surface of the substrate on which the first protective film is formed. An interlayer insulating layer is formed on the surface of the substrate on which the second protective film is formed, and the surface of the interlayer insulating film is flattened. A seed layer and a barrier layer are formed in a U-shape in a cross-sectional view in the wiring recess, and the first protective film is provided on the exposed surface of the wiring so as to close the U-shape of the seed layer and the barrier layer ( For example, see Patent Document 1).

Japanese Unexamined Patent Publication No. 2005-044910

By the way, in the wiring formed by the conventional wiring forming method, if there is a gap between the first protective film and the connection portion between the seed layer and the barrier layer, the conductive material leaks from the wiring, and the conductive material decreases due to the leak. The resistance value of the wiring may increase, the electric field may be concentrated, and the electrical reliability of the wiring may decrease.

Therefore, it is an object of the present invention to provide a wiring structure having high electrical reliability, an electronic device, and a method for manufacturing the wiring structure.

The wiring structure of the embodiment of the present invention includes an insulating layer having a convex portion protruding from one surface, a first metal film covering the upper surface of the convex portion, and the first metal film on the convex portion. A metal wiring provided via the metal wiring, a second metal film covering the upper surface and both side surfaces of the metal wiring, and both side surfaces of the convex portion are covered and integrally formed with the first metal film or the second metal film. that, and a third metal film viewing including the third metal layer, the is first metal film and integrally formed, and a fourth metal film covering both sides of the convex portion, and the second metal film It has a fifth metal film that is integrally formed and covers both side surfaces of the convex portion via the fourth metal film .

It is possible to provide a wiring structure having high electrical reliability, an electronic device, and a method for manufacturing the wiring structure.

It is a figure which shows the cross-sectional structure of the wiring structure 100 of Embodiment 1. FIG. It is a figure which shows the manufacturing process of the wiring structure 100. It is a figure which shows the manufacturing process of the wiring structure 100. It is a figure which shows the manufacturing process of the wiring structure 100. It is a figure which shows the manufacturing process of the wiring structure 100. It is a figure which shows the cross-sectional structure of the wiring structure 200 of Embodiment 2. It is a figure which shows the manufacturing process of the wiring structure 200. It is a figure which shows the manufacturing process of the wiring structure 200. It is a figure which shows the manufacturing process of the wiring structure 200. It is a figure which shows the manufacturing process of the wiring structure 200. It is a figure which shows the manufacturing process of the wiring structure 200. It is a figure which shows the structure which performs the reliability test of the wiring structure 100A. It is a figure which shows the wiring structure 1 for comparison. It is a figure which shows the wiring structure 2 for comparison. It is a figure which shows the test result. It is a figure which shows the electronic device 500.

Hereinafter, embodiments to which the wiring structure, the electronic device, and the method for manufacturing the wiring structure of the present invention are applied will be described.

<Embodiment 1>
FIG. 1 is a diagram showing a cross-sectional configuration of the wiring structure 100 of the first embodiment. In the following, the XYZ coordinate system will be defined and described.

The wiring structure 100 includes an insulating film 110, a metal film 120, a wiring 130, a metal film 140, and an insulating film 150. The wiring 130 extends in the Y-axis direction, and FIG. 1 shows a cross section of the wiring 130 with respect to the longitudinal direction (Y-axis direction).

The insulating film 110 has a convex portion 111. The convex portion 111 protrudes from the surface 112 of the insulating film 110 in the Z-axis direction, and extends in the Y-axis direction like the wiring 130. The surface 112 is the surface of a portion (low portions on both sides of the convex portion 111) other than the convex portion 111 of the insulating film 110.

Here, the surface of the convex portion 111 on the positive direction side of the Z axis is referred to as an upper surface. However, the upper surface of the convex portion 111 is not an upper surface in a universal positional relationship, but is a name for convenience of explanation. The upper surface of the convex portion 111 and the left and right side surfaces (both side surfaces) are covered with the metal film 120.

The insulating film 110 is not particularly limited as long as it is an organic resin, but for example, a polyimide resin, an epoxy resin, a bismaleimide resin, a maleimide resin, a cyanate resin, a phenol resin, a novolak resin, an acrylic resin, a methacrylic resin, a polyphenylene ether resin, or a polyphenylene. An insulating material containing at least one selected from the group containing an oxide resin, an olefin resin, a fluorine-containing resin, a liquid crystal polymer, a polyetherimide resin, and a polyether ether ketone resin can be preferably used, and a film forming film is formed using the insulating material. It is an insulating film.

The metal film 120 is provided as an adhesion layer that brings the insulating film 110 and the wiring 130 into close contact with each other. The metal film 120 is a seed layer used in the semi-additive method. The metal film 120 is provided so as to cover the upper surface of the convex portion 111 and the left and right side surfaces (both side surfaces). The metal film 120 does not need to cover both side surfaces of the convex portion 111 up to the lower end of the convex portion 111, and may cover the metal film 120 continuously from the upper surface to a position below the upper surface by a predetermined length. ..

The metal film 120 includes, for example, boron (B), phosphorus (P), titanium (Ti), cobalt (Co), nickel (Ni), copper (Cu), palladium (Pd), tin (Sn), and tantalum (Ta). ), Tungsten (W), or nitrides thereof, or alloys thereof. The metal film 120 is preferably Ti, Ni, Cu, Ta, or a nitride film thereof.

The film thickness of the metal film 120 is not particularly limited, but is preferably 10 nm to 500 nm. If it is thin, there is a concern that pinholes during film formation will affect reliability, and if it is thick, the process load for removing it will increase.

The wiring 130 is provided on the upper surface of the convex portion 111 via the metal film 120. The wiring 130 is made of copper as an example, and is an example of metal wiring. The width of the wiring 130 in the X-axis direction is equal to the width of the upper surface portion of the convex portion 111 of the metal film 120 in the X-axis direction. Since the thickness of the metal film 120 is negligibly thinner than the width of the convex portion 111 in the X-axis direction, the width of the wiring 130 in the X-axis direction is substantially equal to the width of the convex portion 111 in the X-axis direction.

The metal film 140 has a function as a barrier film that prevents the copper of the wiring 130 from leaking to the insulating film 150. The metal film 140 is provided so as to cover the upper surface and the left and right side surfaces (both side surfaces) of the wiring 130, and further cover the metal film 120 on both side surfaces of the convex portion 111. Therefore, the upper surface and both left and right side surfaces of the wiring 130 are covered with the metal film 140, and the lower surface (the surface on the negative direction side of the Z axis) is covered with the metal film 120. Further, since the metal film 140 and the metal film 120 are overlapped on both side surfaces of the convex portion 111, the wiring 130 is sealed by the metal film 140 and the metal film 120 in a cross-sectional view.

The upper surface of the wiring 130 is the surface on the Z-axis positive direction side of the wiring 130 in FIG. 1, and the lower surface of the wiring 130 is the surface on the Z-axis negative direction side of the wiring 130 in FIG. The upper surface and the lower surface of the wiring 130 are not the upper surface and the lower surface in the universal positional relationship, but are names for convenience of explanation.

The metal film 140 includes boron (B), phosphorus (P), titanium (Ti), cobalt (Co), nickel (Ni), copper (Cu), palladium (Pd), tin (Sn), tantalum (Ta), and the like. Either tungsten (W), these nitrides, or an alloy thereof may be used. These can be appropriately selected depending on the material of the wiring 130 or the material of the insulating film 150. The material of the metal film 140 is different from the material of the metal film 120.

When the metal film 140 is formed by the semi-additive method, the material of the metal film 140 is preferably NiP, NiB, NiWB, NiWP, CoP, CoB, CoWP, CoWB, NiCoWP, NiCoWB, NiCoP, or NiCoB. The metal film 140 is preferably, for example, 2 nm to 100 nm. If it is thin, the effect as a barrier film is reduced, and if it is thick, the target wiring width is reduced by the thickness of the metal film 120 and the wiring resistance is increased, so the appropriate film thickness is set. It is preferable to do so. The metal film 140 is formed by a sputtering method, a CVD method, or an electroless plating method depending on the material used.

The insulating film 150 is provided so as to cover the insulating film 110, the metal film 120, the wiring 130, and the metal film 140.

The insulating film 150 is not particularly limited as long as it is an organic resin, but for example, a polyimide resin, an epoxy resin, a bismaleimide resin, a maleimide resin, a cyanate resin, a phenol resin, a novolak resin, an acrylic resin, a methacrylic resin, a polyphenylene ether resin, or a polyphenylene. An insulating film containing at least one selected from the group containing an oxide resin, an olefin resin, a fluorine-containing resin, a liquid crystal polymer, a polyetherimide resin, and a polyether ether ketone resin can be preferably used. Here, the material of the insulating film 150 will be described as being the same as the material of the insulating film 110, but may be different.

Here, the metal film 120 is an example of the first metal film and the fourth metal film. More specifically, of the metal film 120, the portion provided on the upper surface of the convex portion 111 is an example of the first metal film, and the portions provided on both side surfaces of the convex portion 111 are the fourth metal film. This is an example.

The metal film 140 is an example of the second metal film and the fifth metal film. Of the metal film 140, the portions provided on the upper surface and both side surfaces of the wiring 130 are examples of the second metal film, and the portions provided on both side surfaces of the convex portion 111 are examples of the fifth metal film. .. The metal film 140 as the fifth metal film and the metal film 120 as the fourth metal film form a third metal film.

Next, a method of manufacturing the wiring structure 100 will be described with reference to FIGS. 2 to 4. 2 to 5 are diagrams showing a manufacturing process of the wiring structure 100.

First, as shown in FIG. 2A, the insulating film 110A is formed on the substrate 10. The insulating film 110A may be applied by a spin coating method. Since the insulating film 110A will later become the insulating film 110 (see FIG. 1), it may be made of the material of the insulating film 110 described above. As the substrate 10, for example, a wiring substrate can be used. As an example, a Si (silicon) substrate or a FR-4 (Flame Retardant type-4) standard wiring board can be used as the wiring board.

Next, patterning is performed on the insulating film 110A by photolithography and development processing to form an insulating film 110B having a plurality of convex portions 111B as shown in FIG. 2 (B). The surface 112B is exposed at the portion where the insulating film 110A is removed between the convex portions 111B. The surface 112B is the surface of a portion (low portions on both sides of the convex portion 111B) other than the convex portion 111B of the insulating film 110B.

The plurality of convex portions 111B have, for example, 1 μm line & space and a height of 0.3 μm. That is, the width of the convex portion 111 in the X-axis direction is 1 μm, and the distance between adjacent convex portions 111B in the X-axis direction is also 1 μm. The height of the convex portion 111B in the Z-axis direction is 0.3 μm.

Next, as shown in FIG. 2C, a metal film 120A is formed on the insulating film 110B by a sputtering method. Since the metal film 120A will later become the metal film 120 (see FIG. 1), it may be made of the material of the metal film 120 described above. The thickness of the metal film 120A may be slightly thicker than that of the metal film 120 obtained later. For example, Ti is formed at 20 nm, and Cu is formed at 100 nm on the upper surface thereof.

Next, as shown in FIG. 3A, the insulation pattern 160 is formed on the metal film 120A. The insulation pattern 160 is formed at a height of 1.5 μm with a 0.6 μm line and a 1.4 μm space so as to be arranged on the surfaces 112B on both sides of the convex portion 111B while avoiding the convex portion 111B.

The insulation pattern 160 may be formed on the surface 112B so as not to come into contact with the metal film 120A on the side surface of the convex portion 111B. Such an insulating pattern 160 is produced by forming an insulating film on one surface of the metal film 120A and performing photolithography and development processing on the formed insulating film. Next, as shown in FIG. 3 (B), by performing the electrolytic plating treatment, the height is 1.31.5 μm on the metal film 120A on the convex portion 111B located between the insulating patterns 160. The wiring 130A is formed. At this time, the wiring 130A is formed so as to straddle the upper portion of the metal film 120A on the convex portion 111B in the width direction (X-axis direction).

Next, the structure shown in FIG. 3C is obtained by peeling off the insulation pattern 160. The peeling of the insulation pattern 160 can be realized by using, for example, a stripping agent for an insulating resin such as N-methyl-pyrrolidone.

Next, by performing wet etching, the Cu layer of the metal film 120A provided on the surface 112B of the insulating film 110B is removed to obtain the metal film 120B. The metal film 120B is a Ti layer. At this time, since the wiring 130A which is a co-element with Cu of the metal film 120A is also etched, the wiring 130 is formed as shown in FIG. 4 (A). Examples of the etching solution for selectively removing the Cu layer include Meltex Cu3931 manufactured by Meltex Inc., CuE-3000M manufactured by Wako Junyaku Co., Ltd., and CS manufactured by Nihon Kagaku Sangyo Co., Ltd.

Next, the metal film 120B (Ti layer) on the surface 112B of the insulating film 110B is removed by dry etching to obtain the metal film 120. Further, by continuously performing dry etching, the surface 112B of the insulating film 110B is dug down to form the structure shown in FIG. 4 (B). The insulating film 110B and the metal film 120B shown in FIG. 4 (A) are the insulating film 110 and the metal film 120 in FIG. 4 (B). The insulating film 110 has a convex portion 111 and a surface 112.

Here, the depth of digging the surface 112B is, for example, 0.2 μm. As a result, the metal film 120 has a U-shape with the lower side open in cross-sectional view, and both ends of the U-shape are in a state of floating about 0.2 μm from the surface 112 of the insulating film 110.

Next, a metal film 140 is formed on the surface of the wiring 130 and the metal film 120 on the side surface of the convex portion 111 of the insulating film 110 by the electroless plating method as shown in FIG. 5 (A). As a result, the wiring 130 is in a state of being sealed by the metal film 140 and the metal film 120 in a cross-sectional view. Here, NiP is used as the metal film 140, and as shown in FIG. 5A, the wiring 130 is sealed by the metal film 140 and the metal film 120 by providing a section where the metal film 140 and the metal film 120 overlap each other. can do.

Next, the wiring structure 100 shown in FIG. 5B is obtained by forming the insulating film 150 so as to cover the insulating film 110, the metal film 120, and the metal film 140. The material of the insulating film 150 is as described above. The insulating film 150 may be applied by a spin coating method. By performing the above steps, the wiring structure 100 is completed.

As described above, according to the first embodiment, since the wiring 130 is sealed by the metal film 140 and the metal film 120 in the cross-sectional view, the copper component of the wiring 130 is sealed in the metal film 140 and the metal film 120 in the cross-sectional view. It is possible to suppress leakage to the outside of the and realize high reliability.

Further, since the metal film 140 and the metal film 120 have a section in which the metal film 140 and the metal film 120 are overlapped on both side surfaces of the convex portion 111, it is possible to suppress the formation of a gap between the metal film 140 and the metal film 120, and in such a gap, The concentration of the electric field can be suppressed.

Therefore, according to the first embodiment, it is possible to provide the wiring structure 100 with improved electrical reliability.

<Embodiment 2>
FIG. 6 is a diagram showing a cross-sectional configuration of the wiring structure 200 of the second embodiment. In the following, the XYZ coordinate system will be defined and described.

The wiring structure 200 includes an insulating film 210, a metal film 220, a wiring 230, a metal film 240, and an insulating film 250. Similar to the wiring 130 of the first embodiment, the wiring 230 extends in the Y-axis direction, and FIG. 6 shows a cross section of the wiring 230 with respect to the longitudinal direction (Y-axis direction).

The insulating film 210 has a convex portion 211 extending in the Y-axis direction, similarly to the insulating film 110 of the first embodiment. The insulating film 210 is the same as the insulating film 110 of the first embodiment, but the size of the convex portion 211 in the XZ cross-sectional view is different. The upper surface of the convex portion 211 and the left and right side surfaces (both side surfaces) are covered with a metal film 220.

Similar to the metal film 120 of the first embodiment, the metal film 220 is provided as an adhesion layer for bringing the insulating film 210 and the wiring 230 into close contact with each other, and is a seed layer used in the semi-additive method. The metal film 220 is provided so as to cover the upper surface of the convex portion 211. The metal film 220 is provided only on the upper surface of the convex portion 211, and is not provided on both side surfaces of the convex portion 211.

The wiring 230 is provided on the upper surface of the convex portion 211 via the metal film 220. The width of the wiring 230 in the X-axis direction is equal to the width of the metal film 220 and the convex portion 211. The wiring 230 is made of copper as an example.

The metal film 240 has a function as a barrier film that prevents the copper of the wiring 230 from leaking to the insulating film 250. The metal film 240 is provided so as to cover the upper surface and the left and right side surfaces (both side surfaces) of the wiring 230, and further cover both side surfaces of the convex portion 211. The metal film 240 comes into contact with both ends of the metal film 220 on both side surfaces of the convex portion 211. Therefore, the upper surface and both left and right side surfaces of the wiring 230 are covered with the metal film 240, and the lower surface (the surface on the negative direction side of the Z axis) is covered with the metal film 220.

Here, by using NiP as the metal film 240 and providing sections in which the metal film 240 is arranged on both side surfaces of the convex portion 211, the wiring 230 can be sealed by the metal film 240 and the metal film 220. .. The material of the metal film 240 is the same as that of the metal film 140 of the first embodiment.

The insulating film 250 is provided so as to cover the insulating film 210, the metal film 220, the wiring 230, and the metal film 240.

Here, the metal film 220 is an example of the first metal film. The metal film 240 is an example of the second metal film and the third metal film. Of the metal film 240, the portions provided on the upper surface and both side surfaces of the wiring 230 are examples of the second metal film, and the portions provided on both side surfaces of the convex portion 211 are examples of the third metal film. ..

Next, a method of manufacturing the wiring structure 200 will be described with reference to FIGS. 7 to 9. 7 to 11 are views showing a manufacturing process of the wiring structure 200.

First, as shown in FIG. 7A, an insulating film 210A is formed on the substrate 10. The insulating film 210A is the same as the insulating film 110A of the first embodiment.

Next, as shown in FIG. 7B, a metal film 220A is formed on the surface of the insulating film 210A by a sputtering method. Since the metal film 220A will later become the metal film 220, it may be formed of a metal material for forming the metal film 220. For example, Ti is formed at 20 nm, and Cu is formed at 40 nm on the upper surface thereof.

Next, a plurality of patterns 260 are formed on the metal film 220A by photolithography and development processing as shown in FIG. 7C. The plurality of patterns 260 may be formed, for example, with a line & space of 1 μm and a height of 2 μm.

Next, as shown in FIG. 8A, the wiring 230A having a height of 1.1 μm is formed on the metal film 220A between the plurality of patterns 260 by the electrolytic plating treatment. Since the wiring 230A will later become the wiring 230, it may be manufactured by copper plating.

Next, the structure shown in FIG. 8B is obtained by peeling the pattern 260.

Next, the Cu layer of the metal film 220A is removed by wet etching, and the Ti layer of the metal film 220A is further removed by dry etching, so that the metal film 220 is as shown in FIG. 9 (A). To get. When the Cu layer of the metal film 220A is removed, the upper surface and both side surfaces of the wiring 230A are etched to form the wiring 230. The metal film 220 is located between the wiring 230 and the insulating film 210A. The wet etching solution for removing the Cu layer is the same as in the first embodiment.

Next, by performing dry etching, the surface 212A of the insulating film 210A is dug down to form the structure shown in FIG. 9B. By this dry etching process, the surface 212A of the insulating film 210A (see FIG. 9A) is dug down to the surface 212, and the insulating film 210A becomes the insulating film 210. The insulating film 210 has a convex portion 211. The depth of digging is, for example, 1.0 μm here.

Next, as shown in FIG. 9C, an insulating film 270 is formed on the surfaces 212 on both sides of the convex portion 211. The insulating film 270 is formed to a height lower than the upper surface of the wiring 230.

Next, the insulating film 270A is formed as shown in FIG. 10A by performing photolithography and development processing. The insulating film 270A is produced by forming grooves in the insulating film 270 shown in FIG. 9C at predetermined intervals from the convex portion 211.

Next, as shown in FIG. 10B, the metal film 240A is formed on the upper surface and both side surfaces of the wiring 230, the side surface of the metal film 220, the side surface of the convex portion 211, and the upper surface and both side surfaces of the insulating film 270A by the sputtering method. Form. As a result, the wiring 230 is completely sealed by the metal film 240A and the metal film 220 in cross-sectional view. The metal film 240A is produced, for example, by forming Ni at 30 nm.

Next, the insulating film 270A is peeled off to obtain the structure shown in FIG. 11 (A). Along with the insulating film 270A, the upper surface and both side surfaces of the insulating film 270A of the metal film 240A are also removed.

Next, the wiring structure 200 shown in FIG. 11B is obtained by forming the insulating film 250 so as to cover the insulating film 210 and the metal film 240.

As described above, according to the second embodiment, since the wiring 230 is sealed by the metal film 240 and the metal film 220 in the cross-sectional view, the copper component of the wiring 230 is sealed in the metal film 240 and the metal film 220 in the cross-sectional view. It is possible to suppress leakage to the outside of the wiring 230, and the resistance value of the wiring 230 can be maintained at a stable value for a long period of time.

Further, since the metal film 240 and both ends of the metal film 220 are in contact with each other and the metal film 240 has sections provided on both side surfaces of the convex portion 211, a gap is generated between the metal film 240 and the metal film 220. Can be suppressed.

Therefore, according to the second embodiment, it is possible to provide the wiring structure 200 with improved electrical reliability.

<Reliability evaluation and electronic devices>
Next, the reliability tests of the wiring structures 100 and 200 of the first and second embodiments will be described with reference to FIGS. 12 to 14. FIG. 12 is a diagram showing a structure for performing a reliability test of the wiring structure 100A. Here, the structure for which the reliability test of the wiring structure 100 is performed is referred to as the wiring structure 100A. 13 and 14 are diagrams showing wiring structures 1 and 2 for comparison.

In the wiring structure 100A, the wiring 130 has a comb-toothed wiring structure and is connected to the pad portion 131 formed together with the wiring 130. However, the wiring 170 and the pad 180 are connected to the insulating film 150 of the wiring structure 100 shown in FIG. , It has a configuration in which an insulation pattern 190 is added. The wiring 170 is manufactured by a sputtering method on the inside of the via hole formed in the insulating film 150 and a part of the upper surface of the insulating film 150, for example, by forming Ti at 30 nm and further forming Cu at 100 nm on the upper surface thereof. Since the lower end of the via hole reaches the metal film 140, the wiring 170 is connected to the metal film 140. The pad 180 is formed on the wiring 170, and the pad 180 is surrounded by an insulating pattern 190.

As a pretreatment for the reliability test, the wiring structure 100A is dried for 24 hours in an oven with an air temperature of 125 ° C., and then moisturized in a constant temperature and humidity chamber at a temperature of 60 ° C. and a humidity of 65% for 40 hours. Further, a reflow treatment of 260 ° C. × 3 times was performed.

After performing such pretreatment, as a reliability test, a voltage of 3.5 V is applied through two pads 180 of the wiring structure 100 A in an environment of 130 ° C. and 85% for a maximum of 150 hours to comb. The insulation property of the tooth wiring 130 was evaluated. The distance between the comb tooth wirings 130 is 1 μm. A similar test was also performed on a structure in which a wiring 170, a pad 180, and an insulation pattern 190 were added to the wiring structure 200 of the second embodiment.

Further, reliability tests were also performed on the comparative wiring structures 1 and 2 shown in FIGS. 13 and 14. The wiring structure 1 for comparison shown in FIG. 13 is a structure in which the metal film 140 and the metal film 120 of the wiring structure 100A are not provided on both side surfaces of the convex portion 111. That is, the metal film 120 is provided only on the upper surface of the convex portion 111, the metal film 140 is provided only on the upper surface and both side surfaces of the wiring 130, and the metal film 140 and the metal film 120 are provided on both side surfaces of the convex portion 111. Not provided in.

Further, the wiring structure 2 for comparison shown in FIG. 14 is a structure in which the metal film 240 of the wiring structure 200 is not provided on both side surfaces of the convex portion 111 (the metal film 240 is provided only on the upper surface and both side surfaces of the wiring 130). This is a structure in which the wiring 170, the pad 180, and the insulation pattern 190 are added to the structure in which the metal film 240 is not provided on both side surfaces of the convex portion 211.

FIG. 15 is a diagram showing the test results. The durability time (defect occurrence time) until a defect such as a leak occurs in the comb tooth wiring 130 is 150 hours for the wiring structure 100A of the first embodiment and the structure based on the wiring structure 200 of the second embodiment. Longer and very good results were obtained.

Further, it took 95 hours for the wiring structure 1 for comparison and 110 hours for the wiring structure 2 for comparison. The durability time (defect occurrence time) of the comparative wiring structures 1 and 2 was short at the interface between the metal film 140 and the metal film 120 and the interface between the metal film 240 and the metal film 220 due to copper leaks and leaks. It is probable that the resistance value increased.

From the above, it was possible to confirm the high electrical reliability of the wiring structures 100 and 200 of the first and second embodiments.

FIG. 16 is a diagram showing an electronic device 500. The electronic device 500 has a configuration in which the electronic component 300 is mounted on the insulating film 150 of the wiring structure 100A (see FIG. 12) of the first embodiment, and the terminals of the electronic component 300 and the pads 180 are connected by bumps 301. The electronic device 500 is an example of an electronic device. The electronic component 300 may be, for example, a CPU (Central Processing Unit) chip, a microcomputer, a memory, or an electronic element such as a capacitor or an inductor.

In this way, the electronic component 300 can be mounted on the wiring structure 100A of the first embodiment. The same applies to the wiring structure 200 of the second embodiment.

Although the wiring structure, the electronic device, and the method for manufacturing the wiring structure of the exemplary embodiment of the present invention have been described above, the present invention is not limited to the specifically disclosed embodiments. , Various modifications and changes are possible without departing from the scope of claims.
The following additional notes will be further disclosed with respect to the above embodiments.
(Appendix 1)
An insulating layer having a convex portion protruding from one surface,
A first metal film covering the upper surface of the convex portion and
A metal wiring provided on the convex portion via the first metal film, and
A second metal film covering the upper surface and both side surfaces of the metal wiring,
A wiring structure including a third metal film that covers both side surfaces of the convex portion and is integrally formed with the first metal film or the second metal film.
(Appendix 2)
The third metal film is integrally formed with the first metal film, and is integrally formed with the fourth metal film covering both side surfaces of the convex portion and the second metal film, and the fourth metal film is formed. The wiring structure according to Appendix 1, which has a fifth metal film covering both side surfaces of the convex portion via the above.
(Appendix 3)
The wiring structure according to Appendix 1, wherein the third metal film is integrally formed with the second metal film.
(Appendix 4)
An insulating layer having a convex portion protruding from one surface,
A first metal film covering the upper surface of the convex portion and
A metal wiring provided on the convex portion via the first metal film, and
A second metal film covering the upper surface and both side surfaces of the metal wiring,
A third metal film that covers both sides of the convex portion and is integrally formed with the first metal film or the second metal film.
An electronic device that includes an electronic component that is connected to the metal wiring.
(Appendix 5)
The process of forming the insulating layer and
A step of etching one surface of the insulating layer to form a convex portion protruding from the one surface, and
A step of forming a first metal film covering the upper surface of the convex portion, and
A step of forming a metal wiring on the convex portion via the first metal film, and
A step of forming a second metal film covering the upper surface and both side surfaces of the metal wiring, and
A method for manufacturing a wiring structure, which comprises a step of covering both side surfaces of the convex portion and forming a third metal film integrally with the first metal film or the second metal film.

100, 200 Wiring structure 110, 210 Insulation film 111, 211 Convex part 112, 212 Surface 120, 220 Metal film 130, 230 Wiring 140, 240 Metal film 150, 250 Insulation film

Claims (3)

An insulating layer having a convex portion protruding from one surface,
A first metal film covering the upper surface of the convex portion and
A metal wiring provided on the convex portion via the first metal film, and
A second metal film covering the upper surface and both side surfaces of the metal wiring,
The cover both side surfaces of the convex portion, the first metal layer or the second is a metal film formed integrally with, seen including a third metal film,
The third metal film is integrally formed with the first metal film, and is integrally formed with the fourth metal film covering both side surfaces of the convex portion and the second metal film, and the fourth metal film is formed. A wiring structure having a fifth metal film covering both side surfaces of the convex portion via the above . An insulating layer having a convex portion protruding from one surface,
A first metal film covering the upper surface of the convex portion and
A metal wiring provided on the convex portion via the first metal film, and
A second metal film covering the upper surface and both side surfaces of the metal wiring,
A third metal film that covers both sides of the convex portion and is integrally formed with the first metal film or the second metal film.
Look including an electronic component connected to the metal wiring,
The third metal film is integrally formed with the first metal film, and is integrally formed with the fourth metal film covering both side surfaces of the convex portion and the second metal film, and the fourth metal film is formed. An electronic device having a fifth metal film covering both side surfaces of the convex portion via the above . The process of forming the insulating layer and
A step of etching one surface of the insulating layer to form a convex portion protruding from the one surface, and
A step of forming a first metal film covering the upper surface of the convex portion, and
A step of forming a metal wiring on the convex portion via the first metal film, and
A step of forming a second metal film covering the upper surface and both side surfaces of the metal wiring, and
Covering the both side surfaces of the protrusion, seen including a step of forming said first metal film or the second metal film and integrally third metal film,
The third metal film is integrally formed with the first metal film, and is integrally formed with the fourth metal film covering both side surfaces of the convex portion and the second metal film, and the fourth metal film is formed. A method for manufacturing a wiring structure, which has a fifth metal film covering both side surfaces of the convex portion via the above .

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