JP6783569B2 - Optical semiconductor device - Google Patents
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本発明は、光送信器用光源などに利用される光半導体素子に関する。 The present invention relates to an optical semiconductor device used as a light source for an optical transmitter or the like.
半導体素子は、小型低消費電力な素子として広く普及している。特に、シリコン（Ｓｉ）基板上に形成される電子素子は、エレクトロニクスを支える非常に重要な素子である。一方で、Ｓｉは間接遷移型の半導体であるため、直接遷移型の半導体に比べて発光効率が低い。このため、発光素子をはじめとする光素子の多くは、直接遷移型の化合物半導体により作製される。 Semiconductor devices are widely used as compact, low power consumption devices. In particular, an electronic element formed on a silicon (Si) substrate is a very important element that supports electronics. On the other hand, since Si is an indirect transition type semiconductor, its luminous efficiency is lower than that of a direct transition type semiconductor. For this reason, most optical devices such as light emitting devices are made of direct transition type compound semiconductors.
光通信用の光素子としては、直接遷移型の半導体基板としてＩｎＰ基板が多く用いられる。しかしながら、ＩｎＰ基板は、Ｓｉ基板に比べて大口径の基板作製が困難で基板が高価であり、またＳｉ基板上で行われるＣＭＯＳ作製プロセスに比べ加工精度や加工コストが劣る。 As an optical element for optical communication, an InP substrate is often used as a direct transition type semiconductor substrate. However, the InP substrate is more difficult to fabricate with a large diameter than the Si substrate, the substrate is expensive, and the processing accuracy and processing cost are inferior to the CMOS fabrication process performed on the Si substrate.
上記の問題を解決するため、近年ではＳｉ基板上へ化合物光半導体素子を集積する技術が開発されてきている（非特許文献１，非特許文献２，非特許文献３参照）。特に、ＣＭＯＳ互換プロセスで光素子を作製し、製造コストを削減するためには、平面的に電極構造が作製され、基板面内方向に電流を注入するＳｉ基板に貼り付けられた薄膜型の光素子が有望である（非特許文献２，非特許文献３）。 In order to solve the above problems, a technique for integrating a compound optical semiconductor device on a Si substrate has been developed in recent years (see Non-Patent Document 1, Non-Patent Document 2, and Non-Patent Document 3). In particular, in order to manufacture an optical element by a CMOS compatible process and reduce the manufacturing cost, a thin film type light is manufactured on a planar electrode structure and attached to a Si substrate that injects an electric current in the in-plane direction of the substrate. The device is promising (Non-Patent Document 2, Non-Patent Document 3).
ところで、上述した光素子は、ＳｉとＩｎＰ系半導体との間の屈折率差の関係から、光素子をＳｉ基板上に直接貼り付けた場合、Ｓｉ基板側に大きく光が漏れ出し、素子として機能しない問題がある。このため、これらの技術では、Ｓｉ基板の上にＳｉＯ2やベンゾシクロブテンなどの材料による層を挿入してＳｉ基板から光素子を離間させ、光閉じ込めを確保することが行われている。 By the way, due to the difference in refractive index between Si and the InP semiconductor, the above-mentioned optical element functions as an element because when the optical element is directly attached to the Si substrate, light leaks to the Si substrate side. There is a problem that does not occur. For this reason, in these techniques, a layer made of a material such as SiO 2 or benzocyclobutene is inserted on the Si substrate to separate the optical element from the Si substrate, and light confinement is ensured.
しかし、このようなＳｉＯ2やベンゾシクロブテンなどの材料による層は、大きな熱抵抗率を有するために放熱効率が悪く、光素子の高電流注入動作領域においては、発熱により素子特性が大きく劣化するという問題があった。このため、光閉じ込めと高い放熱を両立する構造はこれまでに実現されていなかった。 However, such a layer made of a material such as SiO 2 or benzocyclobutene has a large thermal resistance, so that the heat dissipation efficiency is poor, and in the high current injection operation region of the optical device, the element characteristics are greatly deteriorated due to heat generation. There was a problem. For this reason, a structure that achieves both light confinement and high heat dissipation has not been realized so far.
本発明は、以上のような問題点を解消するためになされたものであり、Ｓｉ基板上に配置されたＩＩＩ−Ｖ族化合物半導体からなる光素子における光閉じ込めおよび高い放熱が両立できるようにすることを目的とする。 The present invention has been made to solve the above problems, and makes it possible to achieve both light confinement and high heat dissipation in an optical element made of a III-V compound semiconductor arranged on a Si substrate. The purpose is.
本発明に係る光半導体素子は、シリコンからなる基板と、基板の上に形成されたＩＩＩ−Ｖ族化合物半導体からなる光導波路型の光素子と、光素子と基板との間に形成されて光素子を構成するコアより屈折率が低く、かつ熱伝導率が絶縁体より大きい中間層とを備え、コアは、コア層とコア層に埋め込まれた活性層とを有し、光素子は、活性層が形成されている部分において、基板面内方向にコア層を挟む状態に配置されたｐ型半導体層およびｎ型半導体層を有し、中間層は、光素子を導波する光のモードが基板にかからない厚さとされ、絶縁体は、酸化シリコン，窒化シリコン，ベンゾシクロブテンのいずれかである。 The optical semiconductor device according to the present invention is an optical waveguide type optical element made of a substrate made of silicon, a group III-V compound semiconductor formed on the substrate, and light formed between the optical element and the substrate. The core includes an intermediate layer having a refractive index lower than that of the core constituting the device and a thermal conductivity higher than that of the insulator, the core has a core layer and an active layer embedded in the core layer, and the optical device is active. In the portion where the layer is formed, it has a p-type semiconductor layer and an n-type semiconductor layer arranged so as to sandwich the core layer in the in-plane direction of the substrate, and the intermediate layer has a mode of light that waveguides an optical element. is a thickness not overlap the substrate, insulator, silicon oxide, silicon nitride, Ru der either benzocyclobutene.
上記光半導体素子において、中間層は、ＧａＰxＮ1-x（０＜ｘ≦１）またはＡｌＰxＮ1-x（０＜ｘ≦１）から構成されていればよい。 In the above-mentioned optical semiconductor device, the intermediate layer may be composed of GaP x N 1-x (0 <x ≦ 1) or AlP x N 1-x (0 <x ≦ 1).
上記光半導体素子において、中間層と光素子との間に形成された絶縁層を備え、絶縁層は、光素子が中間層に接して形成されている場合に比較して光素子から基板への熱伝導が変化しない範囲の厚さとされていてもよい。絶縁層は、酸化シリコンから構成され、厚さが１００ｎｍ以下とされていればよい。 The optical semiconductor device includes an insulating layer formed between the intermediate layer and the optical element, and the insulating layer is from the optical element to the substrate as compared with the case where the optical element is formed in contact with the intermediate layer. The thickness may be set so that the heat conduction does not change. The insulating layer may be made of silicon oxide and have a thickness of 100 nm or less.
以上説明したように、本発明によれば、光素子と基板との間に形成されて光素子を構成するコアより屈折率が低く、かつ熱伝導率が絶縁体より大きい中間層とを備えるようにしたので、Ｓｉ基板上に配置されたＩＩＩ−Ｖ族化合物半導体からなる光素子における光閉じ込めおよび高い放熱が両立できるという優れた効果が得られる。 As described above, according to the present invention, an intermediate layer having a refractive index lower than that of the core formed between the optical element and the substrate and constituting the optical element and having a thermal conductivity larger than that of the insulator is provided. Therefore, it is possible to obtain an excellent effect that both light confinement and high heat dissipation can be achieved in the optical element made of the III-V compound semiconductor arranged on the Si substrate.
以下、本発明の実施の形態について図を参照して説明する。図１は、本発明の実施の形態における光半導体素子の構成を示す構成図である。この光半導体素子は、シリコン（Ｓｉ）からなる基板１０１と、基板１０１の上に形成された光導波路型の光素子１０２と、光素子１０２と基板１０１との間に形成された中間層１０３とを備える。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. FIG. 1 is a configuration diagram showing a configuration of an optical semiconductor device according to an embodiment of the present invention. This optical semiconductor element includes a substrate 101 made of silicon (Si), an optical waveguide type optical element 102 formed on the substrate 101, and an intermediate layer 103 formed between the optical element 102 and the substrate 101. To be equipped.
光素子１０２は、ＩＩＩ−Ｖ族化合物半導体から構成されている。中間層１０３は、光素子１０２を構成するコアより屈折率が低く、かつ熱伝導率が、酸化シリコン，窒化シリコン，ベンゾシクロブテンなどの絶縁材料（絶縁体）より大きい材料から構成されている。また、中間層１０３は、光素子１０２を導波する光のモードが基板１０１にかからない厚さとされている。光素子１０２を導波する光もモードが、基板１０１にかからない状態に、中間層１０３の層厚が設定されていればよい。 The optical element 102 is composed of a group III-V compound semiconductor. The intermediate layer 103 is made of a material having a refractive index lower than that of the core constituting the optical element 102 and having a thermal conductivity higher than that of an insulating material (insulator) such as silicon oxide, silicon nitride, or benzocyclobutene. Further, the thickness of the intermediate layer 103 is set so that the mode of light guided through the optical element 102 does not affect the substrate 101. The layer thickness of the intermediate layer 103 may be set so that the mode of the light guided through the optical element 102 does not affect the substrate 101.
中間層１０３は、例えば、単結晶シリコンからなる基板１０１の上に、直接エピタキシャル成長させることが可能なＩＩＩ−Ｖ族化合物半導体から構成されているとよい。このような材料として、例えば、ＧａＰxＮ1-x（０＜ｘ≦１）またはＡｌＰxＮ1-x（０＜ｘ≦１）がある。これらの材料は、単結晶シリコンと格子定数がほぼ一致している（擬似格子整合している）。言い換えると、中間層１０３は、基板１０１に擬似格子整合または格子整合する材料から構成すればよい。特に、ＧａＰは、単結晶シリコンとの間の格子定数差が０．３５％と小さく、中間層１０３の材料として好適である。 The intermediate layer 103 may be composed of, for example, a group III-V compound semiconductor capable of being directly epitaxially grown on a substrate 101 made of single crystal silicon. Such materials include, for example, GaP x N 1-x (0 <x ≦ 1) or AlP x N 1-x (0 <x ≦ 1). These materials have almost the same lattice constant as single crystal silicon (pseudo-lattice matching). In other words, the intermediate layer 103 may be made of a material that is pseudo-lattice-matched or lattice-matched to the substrate 101. In particular, GaP has a small lattice constant difference of 0.35% from that of single crystal silicon, and is suitable as a material for the intermediate layer 103.
光半導体素子は、例えば、図２に示すような素子である。この素子は、シリコンからなる基板２０１の上に、ＧａＰから構成された中間層２０２を備える。また、中間層２０２の上に、例えばＩｎＧａＡｓＰなどのＩＩＩ−Ｖ族化合物半導体からなる多重量子井戸構造の活性層２０３を備えている。活性層２０３は、例えば、ＩｎＰなどのＩＩＩ−Ｖ族化合物半導体からなるコア層２０４に埋め込まれている。 The optical semiconductor device is, for example, an element as shown in FIG. This element includes an intermediate layer 202 made of GaP on a substrate 201 made of silicon. Further, on the intermediate layer 202, an active layer 203 having a multiple quantum well structure made of a III-V compound semiconductor such as InGaAsP is provided. The active layer 203 is embedded in a core layer 204 made of a III-V compound semiconductor such as InP.
また、活性層２０３が形成されている部分においては、コア層２０４を挟む状態に、ＩｎＰなどのＩＩＩ−Ｖ族化合物半導体からなるｐ型半導体層２０５およびｎ型半導体層２０６が形成されている。また、ｐ型半導体層２０５の上には、ｐ型電極２０７が形成され、ｎ型半導体層２０６の上には、ｎ型電極２０８が形成されている。各電極は、コンタクト層（不図示）を介して形成されている。 Further, in the portion where the active layer 203 is formed, the p-type semiconductor layer 205 and the n-type semiconductor layer 206 made of a III-V compound semiconductor such as InP are formed so as to sandwich the core layer 204. Further, a p-type electrode 207 is formed on the p-type semiconductor layer 205, and an n-type electrode 208 is formed on the n-type semiconductor layer 206. Each electrode is formed via a contact layer (not shown).
例えば、まず、高抵抗ＩｎＰ基板などの半導体基板の上に、活性層２０３、コア層２０４、ｐ型半導体層２０５およびｎ型半導体層２０６などの素子部を形成する。一方で、基板２０１の上に、ＧａＰを直接成長することで中間層２０２を形成する。なお、直接成長に限らず、他の方法で中間層２０２を形成してもよい。次に、素子部と中間層２０２とを貼り合わせ、この後、素子部から半導体基板を除去する。次に、上述した各電極を形成すれば、光半導体素子が得られる。このような光半導体素子において、活性層２０３、コア層２０４より屈折率が低い材料から中間層２０２が構成されていればよい。また、中間層２０２は、酸化シリコン，窒化シリコン，ベンゾシクロブテンなどの絶縁材料より熱伝導率が大きい材料から構成されていればよい。 For example, first, element portions such as an active layer 203, a core layer 204, a p-type semiconductor layer 205, and an n-type semiconductor layer 206 are formed on a semiconductor substrate such as a high-resistance InP substrate. On the other hand, the intermediate layer 202 is formed by directly growing GaP on the substrate 201. The intermediate layer 202 may be formed by another method, not limited to direct growth. Next, the element portion and the intermediate layer 202 are bonded together, and then the semiconductor substrate is removed from the element portion. Next, if each of the electrodes described above is formed, an optical semiconductor device can be obtained. In such an optical semiconductor device, the intermediate layer 202 may be composed of a material having a refractive index lower than that of the active layer 203 and the core layer 204. Further, the intermediate layer 202 may be made of a material having a higher thermal conductivity than an insulating material such as silicon oxide, silicon nitride, or benzocyclobutene.
図２を用いて説明した光半導体素子について解析して効果を検証した。効果の検証では、実施例１として、図３Ａに示すように、基板２０１の上に、厚さ２μｍのＧａＰからなる中間層２０２を配置し、中間層２０２の上に、厚さ０．３０１μｍのＩｎＰからなるコア層２０４を配置し、コア層２０４の中に、幅１μｍの活性層２０３を配置した。また、比較例１として、図３Ｂに示すように、中間層を設けずに、基板２０１の上にコア層２０４を直接配置した。また、比較例２として、図３Ｃに示すように、厚さ１μｍのＳｉＯ2からなる中間層２０２ａを配置した。 The effect was verified by analyzing the optical semiconductor device described with reference to FIG. In the verification of the effect, as the first embodiment, as shown in FIG. 3A, an intermediate layer 202 made of GaP having a thickness of 2 μm is arranged on the substrate 201, and an intermediate layer 202 having a thickness of 0.301 μm is placed on the intermediate layer 202. A core layer 204 made of InP was arranged, and an active layer 203 having a width of 1 μm was arranged in the core layer 204. Further, as Comparative Example 1, as shown in FIG. 3B, the core layer 204 was directly arranged on the substrate 201 without providing the intermediate layer. Further, as Comparative Example 2, as shown in FIG. 3C, an intermediate layer 202a made of SiO 2 having a thickness of 1 μm was arranged.
また、効果検証では、光強度の分布、および活性層２０３の片側直横に０．５Ｗ／μｍ3の熱源が配置された場合の温度分布をシミュレーションした。 In the effect verification, the distribution of light intensity and the temperature distribution when a heat source of 0.5 W / μm 3 was arranged immediately beside one side of the active layer 203 were simulated.
なお、ＩｎＰの熱伝導率は６２×１０-16Ｗ／ｍ、波長１．３μｍにおける屈折率は３．１６７９である。Ｓｉの熱伝導率は１３０×１０-16Ｗ／ｍ、波長１．３μｍにおける屈折率は３．５０１６である。ＧａＰの熱伝導率は１０１×１０-16Ｗ／ｍ、波長１．３μｍにおける屈折率は３．０７４５である。活性層２０３における熱伝導率は４×１０-16Ｗ／ｍ、波長１．３μｍにおける屈折率は３．４ある。酸化シリコンの熱伝導率は１×１０-16Ｗ／ｍ、波長１．３μｍにおける屈折率は１．４４６９ある。空気の熱伝導率は０．０２４×１０-16Ｗ／ｍ、波長１．３μｍにおける屈折率は１である。 The thermal conductivity of InP is 62 × 10 -16 W / m, and the refractive index at a wavelength of 1.3 μm is 3.1679. The thermal conductivity of Si is 130 × 10 -16 W / m, and the refractive index at a wavelength of 1.3 μm is 3.5016. The thermal conductivity of GaP is 101 × 10 -16 W / m, and the refractive index at a wavelength of 1.3 μm is 3.0745. The thermal conductivity of the active layer 203 is 4 × 10 -16 W / m, and the refractive index at a wavelength of 1.3 μm is 3.4. Silicon oxide has a thermal conductivity of 1 × 10 -16 W / m and a refractive index of 1.4469 at a wavelength of 1.3 μm. The thermal conductivity of air is 0.024 × 10 -16 W / m, and the refractive index at a wavelength of 1.3 μm is 1.
まず、図４に、比較例１の結果を示す。図４の（ａ）に示すように、光は基板２０１の側へ漏れ出し、活性層２０３に光を閉じ込めることができていない。なお、図４の（ｂ）に示すように、温度上昇は１１Ｋ程度と比較的小さい。 First, FIG. 4 shows the results of Comparative Example 1. As shown in FIG. 4A, the light leaks to the side of the substrate 201, and the light cannot be confined in the active layer 203. As shown in FIG. 4B, the temperature rise is relatively small, about 11K.
次に、図５に、比較例２の結果を示す。図５の（ａ）に示すように、光は、活性層２０３に強く閉じ込められている。一方、図５の（ｂ）に示すように、温度上昇がおよそ４７Ｋと非常に大きくなってしまう。 Next, FIG. 5 shows the results of Comparative Example 2. As shown in FIG. 5A, the light is strongly confined in the active layer 203. On the other hand, as shown in FIG. 5B, the temperature rise becomes very large, about 47K.
次に、図６に、実施例１の結果を示す。図６の（ａ）に示すように、光は、活性層２０３に強く閉じ込められている。加えて、図６の（ｂ）に示すように、温度上昇もおよそ１２Ｋと、比較例１の場合と遜色が無い。 Next, FIG. 6 shows the results of Example 1. As shown in FIG. 6A, the light is strongly confined in the active layer 203. In addition, as shown in FIG. 6B, the temperature rise is about 12K, which is comparable to that of Comparative Example 1.
上述したように、本発明の実施の形態によれば、Ｓｉ基板上に配置されたＩＩＩ−Ｖ族化合物半導体からなる光素子における光閉じ込めおよび高い放熱が両立できるようになる。 As described above, according to the embodiment of the present invention, both light confinement and high heat dissipation in an optical element made of a III-V compound semiconductor arranged on a Si substrate can be achieved.
ところで、前述したように、光半導体素子の作製において、活性層２０３、コア層２０４、ｐ型半導体層２０５およびｎ型半導体層２０６などの素子部を中間層２０２に貼り付ける場合、これらの間に絶縁層を備えるようにしてもよい。例えば、ＳｉＯ2からなる絶縁層を貼り付けそうとして用いることで、接着性を向上させることができる。 By the way, as described above, in the production of an optical semiconductor device, when element portions such as an active layer 203, a core layer 204, a p-type semiconductor layer 205 and an n-type semiconductor layer 206 are attached to an intermediate layer 202, they are sandwiched between them. An insulating layer may be provided. For example, the adhesiveness can be improved by using an insulating layer made of SiO 2 for sticking.
ただし、絶縁層は、光素子が中間層に接して形成されている場合に比較して光素子から基板への熱伝導が変化しない範囲の厚さとされていることが重要である。例えば、ＳｉＯ2から絶縁層を構成した場合、図７に示すように、絶縁層の厚さが１００ｎｍを越えると、絶縁層を用いない場合に比較し、温度上昇が２倍以上となる。このため、放熱性を悪化させないためには、ＳｉＯ2からなる絶縁層を介して貼り付ける場合、絶縁層の厚さは１００ｎｍ以下であることが望ましい。 However, it is important that the insulating layer has a thickness within a range in which the heat conduction from the optical element to the substrate does not change as compared with the case where the optical element is formed in contact with the intermediate layer. For example, when the insulating layer is made of SiO 2 , when the thickness of the insulating layer exceeds 100 nm, the temperature rise is more than doubled as compared with the case where the insulating layer is not used, as shown in FIG. Therefore, in order not to deteriorate the heat dissipation property, it is desirable that the thickness of the insulating layer is 100 nm or less when it is attached via the insulating layer made of SiO 2 .
上述では、ＳｉＯ2の熱伝導率を１×１０-6Ｋ／ｍと仮定しており、ＳｉＯ2からなる絶縁層の厚さを熱伝導率で割った値が１００×１０-3ｍ2／Ｋ以下であれば、放熱性が確保されることを意味する。従って、ＳｉＯ2以外の材料から絶縁層を構成する場合においても、絶縁層の厚さを熱伝導率で割った値が１００×１０-3ｍ2／Ｋ以下とすることが重要である。 In the above, the thermal conductivity of SiO 2 is assumed to be 1 × 10 -6 K / m, and the value obtained by dividing the thickness of the insulating layer made of SiO 2 by the thermal conductivity is 100 × 10 -3 m 2 /. If it is K or less, it means that heat dissipation is ensured. Therefore, even when the insulating layer is composed of a material other than SiO 2 , it is important that the value obtained by dividing the thickness of the insulating layer by the thermal conductivity is 100 × 10 -3 m 2 / K or less.
なお、上述では、中間層をＧａＰから構成する場合を例に説明したが、これに限るものではなく、単結晶Ｓｉと完全に格子整合するＧａＰＮなどをはじめ、他の材料から中間層を構成してもよい。 In the above description, the case where the intermediate layer is composed of GaP has been described as an example, but the present invention is not limited to this, and the intermediate layer is composed of other materials such as GaPN which is completely lattice-matched with the single crystal Si. You may.
以上に説明したように、本発明によれば、シリコンからなる基板の上に、光素子を構成するコアより屈折率が低くかつ熱伝導率が絶縁体より大きい中間層を介して光導波路型の光素子を配置したので、Ｓｉ基板上に配置されたＩＩＩ−Ｖ族化合物半導体からなる光素子における光閉じ込めおよび高い放熱が両立できるようになる。 As described above, according to the present invention, an optical waveguide type is provided on a substrate made of silicon via an intermediate layer having a lower refractive index than a core constituting an optical element and a higher thermal conductivity than an insulator. Since the optical element is arranged, it becomes possible to achieve both light confinement and high heat dissipation in the optical element made of the III-V compound semiconductor arranged on the Si substrate.
なお、本発明は以上に説明した実施の形態に限定されるものではなく、本発明の技術的思想内で、当分野において通常の知識を有する者により、多くの変形および組み合わせが実施可能であることは明白である。例えば、各層の厚さや活性層の断面寸法などは上述した数値に限るものではない。 The present invention is not limited to the embodiments described above, and many modifications and combinations can be carried out by a person having ordinary knowledge in the art within the technical idea of the present invention. That is clear. For example, the thickness of each layer and the cross-sectional dimensions of the active layer are not limited to the above-mentioned numerical values.
１０１…基板、１０２…光素子、１０３…中間層。 101 ... substrate, 102 ... optical element, 103 ... intermediate layer.
Claims (4)
前記基板の上に形成されたＩＩＩ−Ｖ族化合物半導体からなる光導波路型の光素子と、
前記光素子と前記基板との間に形成されて前記光素子を構成するコアより屈折率が低く、かつ熱伝導率が絶縁体より大きい中間層と
を備え、
前記コアは、コア層と前記コア層に埋め込まれた活性層とを有し、
前記光素子は、前記活性層が形成されている部分において、基板面内方向に前記コア層を挟む状態に配置されたｐ型半導体層およびｎ型半導体層を有し、
前記中間層は、前記光素子を導波する光のモードが前記基板にかからない厚さとされ、
前記絶縁体は、酸化シリコン，窒化シリコン，ベンゾシクロブテンのいずれかである
ことを特徴とする光半導体素子。 A substrate made of silicon and
An optical waveguide type optical element made of a III-V compound semiconductor formed on the substrate,
It is provided with an intermediate layer formed between the optical element and the substrate, which has a lower refractive index than the core constituting the optical element and has a higher thermal conductivity than the insulator.
The core has a core layer and an active layer embedded in the core layer.
The optical element has a p-type semiconductor layer and an n-type semiconductor layer arranged so as to sandwich the core layer in the in-plane direction of the substrate in a portion where the active layer is formed.
The intermediate layer has a thickness such that the mode of light that guides the optical element does not cover the substrate .
The insulator is silicon oxide, silicon nitride, an optical semiconductor element characterized by Ru der either benzocyclobutene.
前記中間層は、ＧａＰxＮ1-x（０＜ｘ≦１）またはＡｌＰxＮ1-x（０＜ｘ≦１）から構成されていることを特徴とする光半導体素子。 In the optical semiconductor device according to claim 1,
The optical semiconductor device is characterized in that the intermediate layer is composed of GaP x N 1-x (0 <x ≦ 1) or AlP x N 1-x (0 <x ≦ 1).
前記中間層と前記光素子との間に形成された絶縁層を備え、
前記絶縁層は、前記光素子が前記中間層に接して形成されている場合に比較して前記光素子から前記基板への熱伝導が変化しない範囲の厚さとされている
ことを特徴とする光半導体素子。 In the optical semiconductor device according to claim 1 or 2.
An insulating layer formed between the intermediate layer and the optical element is provided.
The insulating layer is characterized by having a thickness within a range in which the heat conduction from the optical element to the substrate does not change as compared with the case where the optical element is formed in contact with the intermediate layer. Semiconductor element.
前記絶縁層は、酸化シリコンから構成され、厚さが１００ｎｍ以下とされていることを特徴とする光半導体素子。 In the optical semiconductor device according to claim 3,
The insulating layer is an optical semiconductor device characterized in that it is made of silicon oxide and has a thickness of 100 nm or less.
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