JP6764035B2 - １３族元素窒化物層、自立基板および機能素子 - Google Patents

１３族元素窒化物層、自立基板および機能素子 Download PDF

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JP6764035B2
JP6764035B2 JP2019538028A JP2019538028A JP6764035B2 JP 6764035 B2 JP6764035 B2 JP 6764035B2 JP 2019538028 A JP2019538028 A JP 2019538028A JP 2019538028 A JP2019538028 A JP 2019538028A JP 6764035 B2 JP6764035 B2 JP 6764035B2
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group
light emitting
crystal layer
nitride crystal
element nitride
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Japanese (ja)
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JPWO2019039207A1 (ja
Inventor
崇行 平尾
崇行 平尾
中西　宏和
宏和 中西
幹也 市村
幹也 市村
孝直 下平
孝直 下平
坂井　正宏
正宏 坂井
隆史 吉野
隆史 吉野
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NGK Insulators Ltd
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NGK Insulators Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0632—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with gallium, indium or thallium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/0602—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with two or more other elements chosen from metals, silicon or boron
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • C30B29/406—Gallium nitride
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B9/00—Single-crystal growth from melt solutions using molten solvents
    • C30B9/04—Single-crystal growth from melt solutions using molten solvents by cooling of the solution
    • C30B9/08—Single-crystal growth from melt solutions using molten solvents by cooling of the solution using other solvents
    • C30B9/10—Metal solvents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Inorganic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Metallurgy (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Led Devices (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2019538028A 2017-08-24 2018-07-31 １３族元素窒化物層、自立基板および機能素子 Active JP6764035B2 (ja)

Applications Claiming Priority (7)

Application Number Priority Date Filing Date Title
PCT/JP2017/030373 WO2019038892A1 (fr) 2017-08-24 2017-08-24 Couche de nitrure d'éléments du groupe 13, substrat autonome et élément fonctionnel
JPPCT/JP2017/030373 2017-08-24
PCT/JP2017/034035 WO2019038933A1 (fr) 2017-08-24 2017-09-21 Couche de nitrure d'élément du groupe 13, substrat autoporteur et élément fonctionnel
JPPCT/JP2017/034035 2017-09-21
JP2018061553 2018-03-28
JP2018061553 2018-03-28
PCT/JP2018/028558 WO2019039207A1 (fr) 2017-08-24 2018-07-31 Couche de nitrure d'élément du groupe 13, substrat autoporteur et élément fonctionnel

Publications (2)

Publication Number Publication Date
JP6764035B2 true JP6764035B2 (ja) 2020-09-30
JPWO2019039207A1 JPWO2019039207A1 (ja) 2020-10-08

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JP2019538028A Active JP6764035B2 (ja) 2017-08-24 2018-07-31 １３族元素窒化物層、自立基板および機能素子

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Country Link
JP (1) JP6764035B2 (fr)
CN (1) CN111052413B (fr)
WO (1) WO2019039207A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2021049170A1 (fr) * 2019-09-11 2021-03-18 日本碍子株式会社 Procédé de production d'une couche de cristaux de nitrure d'élément du groupe 13, et substrat de germe cristallin

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3580169B2 (ja) * 1999-03-24 2004-10-20 日亜化学工業株式会社 窒化物半導体素子
JP3670927B2 (ja) * 2000-03-31 2005-07-13 三洋電機株式会社 窒化物系半導体発光素子
JP4534631B2 (ja) * 2003-10-31 2010-09-01 住友電気工業株式会社 Ｉｉｉ族窒化物結晶の製造方法
WO2007119433A1 (fr) * 2006-03-20 2007-10-25 Kanagawa Academy Of Science And Technology Couche de nitrure de groupe iii-v et son procédé de fabrication
JP5099763B2 (ja) * 2007-12-18 2012-12-19 国立大学法人東北大学 基板製造方法およびｉｉｉ族窒化物半導体結晶
JP5434111B2 (ja) * 2009-02-06 2014-03-05 三菱化学株式会社 自立基板の製造方法
US20110042646A1 (en) * 2009-08-21 2011-02-24 Sharp Kabushiki Kaisha Nitride semiconductor wafer, nitride semiconductor chip, method of manufacture thereof, and semiconductor device
US9312446B2 (en) * 2013-05-31 2016-04-12 Ngk Insulators, Ltd. Gallium nitride self-supported substrate, light-emitting device and manufacturing method therefor
WO2015068458A1 (fr) * 2013-11-07 2015-05-14 日本碍子株式会社 SUBSTRAT MATRICE DE GaN ET SUBSTRAT DE DISPOSITIF
WO2015083768A1 (fr) * 2013-12-05 2015-06-11 日本碍子株式会社 Substrat à base de nitrure de gallium et élément fonctionnel
US9653554B2 (en) * 2014-07-21 2017-05-16 Soraa, Inc. Reusable nitride wafer, method of making, and use thereof
JP6479054B2 (ja) * 2015-01-29 2019-03-06 日本碍子株式会社 自立基板、機能素子およびその製造方法
JP6578570B2 (ja) * 2015-03-03 2019-09-25 国立大学法人大阪大学 Ｉｉｉ族窒化物半導体結晶基板の製造方法
JP6451563B2 (ja) * 2015-09-08 2019-01-16 株式会社豊田中央研究所 窒化ガリウム結晶及びその製造方法、並びに、結晶成長装置
WO2017077989A1 (fr) * 2015-11-02 2017-05-11 日本碍子株式会社 Substrat épitaxial pour éléments semi-conducteurs, élément semi-conducteur et procédé de fabrication de substrats épitaxiaux pour éléments semi-conducteurs

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Publication number Publication date
WO2019039207A1 (fr) 2019-02-28
CN111052413A (zh) 2020-04-21
CN111052413B (zh) 2023-08-15
JPWO2019039207A1 (ja) 2020-10-08

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