JP6744694B1 - Surface modifying device and surface modifying method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a surface reforming device and a surface reforming method capable of significantly reducing costs such as manufacturing cost and maintenance cost with a simple structure and easily modifying an inner surface of an irradiation hole of an irradiation target. To provide. According to the present invention, a cylindrical cathode electrode (5A) that emits electrons toward an inner surface (7B) of an irradiation hole (7A) of an irradiation target (7) and the cathode electrode (5A). A surface reforming apparatus (100) having a collector (5C) for collecting emitted electrons, wherein an insulating member (8) is provided between the collector (5C) and the irradiated body (7). It is characterized by [Selection diagram] Figure 1

Description

The present invention relates to a surface reforming apparatus and a surface reforming method for reforming the surface of an irradiation target, and in particular, a surface reforming apparatus capable of modifying the side surface of an irradiation hole formed in the irradiation target. And a surface modification method.

In general, there is known a surface reforming device that forms an electron column having a diameter of several tens of mmφ or more and irradiates a surface of an irradiation target with an electron beam having a low energy density and a large area. A surface reforming device that scans an electron beam of an electron column having a diameter of less than several mmφ, that is, a surface reforming device that can obtain an electron column having a large area as compared with so-called spot irradiation is typically disclosed in Patent Document 1, A cathode electrode and a collector electrode are arranged on a vertical line, and a ring-shaped anode electrode and a solenoid are provided between the cathode electrode and the collector electrode.

In such a surface reforming apparatus, electrons are excited by plasma generated at the anode, and are focused and accelerated by a magnetic field formed by a solenoid, and a large amount of electrons are emitted from the cathode while holding irradiation energy. Reach faraway collectors. At this time, the electrons try to move on the shortest path with a linear distance between the cathode and the collector. Therefore, when holes are formed on the irradiated surface of the irradiated object, many electrons are concentrated around the entrance of the hole, especially on the edge, and most of the remaining electrons collide with the bottom surface of the hole, and The part that collides with is reformed.
For this reason, in the surface modification device, it is difficult to uniformly irradiate the electron beam over the entire surface including the bottom surface and the side surface of the hole formed in the irradiation surface of the irradiation object.

In order to solve the above-mentioned problems, an apparatus capable of irradiating an electron beam on the inner surface of a tubular object to be irradiated by arranging a cathode electrode and a magnet in a hollow space of the tubular object to excite electrons. (Patent Document 2) and a device (Patent Document 3) capable of colliding an electron beam with a wide area on the side surface of an irradiation hole by one irradiation by using a cathode electrode having a large number of metal protrusions have been developed. ..

JP, 2006-344387, A Japanese Patent No. 5187876 Japanese Patent No. 6450809

However, in the electron beam irradiation surface reforming apparatus of Patent Document 2, since it is necessary to provide a magnet on the cathode electrode, the number of parts is increased, the manufacturing cost is increased, and the assembly work for manufacturing the cathode electrode is complicated. Will be.
Also in the surface reforming apparatus of Patent Document 3, since it is necessary to provide a large number of metal protrusions on the cathode electrode, the structure of the cathode electrode becomes complicated, processing and production are difficult, and the maintenance cost of the cathode electrode increases.

Therefore, in view of the above problems, the present invention has a simple structure capable of significantly reducing costs such as manufacturing cost and maintenance cost, and capable of easily modifying the inner surface of the irradiation hole of the irradiation target. The main object is to provide a quality device and a surface modification method. Some advantages of the surface modification apparatus and the surface modification method of the present invention will be described in detail in the description of the embodiments of the invention.

The inventors of the present application have conducted intensive studies on the above problems, and as a result, (1) use a cylindrical cathode electrode in the surface reforming device, (2) provide an insulator between the irradiated body and the collector, By performing these (1) and (2), a discharge accompanied by a spark is generated between the cathode electrode and the inner surface of the irradiation hole of the irradiation target, and the inner surface of the hole is appropriately modified by this energy. I found that.
Here, the spark is a spark phenomenon that occurs between the tip of the cathode electrode and the inner surface of the irradiated body due to discharge.

The present invention is a surface reforming apparatus comprising a cylindrical cathode electrode that emits electrons toward an inner surface of an irradiation hole of an irradiation target, and a collector that collects electrons emitted from the cathode electrode, An insulating member is provided between the collector and the irradiated body.
Generally, the electrons emitted from the cathode electrode try to move along the shortest path with a linear distance between the cathode electrode and the collector. However, in the present invention, since the insulating member is provided between the collector and the object to be irradiated, the electrons cannot move to the collector in a linear distance, and the electrons emitted from the cathode electrode are the object to be irradiated closest to the object. It flies to the inner surface of the, and a discharge accompanied by a spark is generated. The inner surface of the irradiation hole can be smoothed by the heat energy of the spark and the heat energy of the electric current flowing through the inner surface of the irradiation target thereafter, so that the inside of the irradiation hole can be modified.

In the surface reforming apparatus of the present invention, the collector is a flat table, the insulating member is arranged on the collector, and the irradiated body is arranged on the insulating member. And
According to the present invention, the collector also serves as a table on which the object to be irradiated is placed, and the insulating member is placed on the table and the object to be irradiated is simply placed on the insulating member. Since the side surface can be smoothed, the inner side surface of the irradiation hole of the irradiation target can be modified with a simple structure having a minimum number of parts.

In the surface reforming apparatus of the present invention, the insulating member is a pair of flat plate-shaped members, the insulating member is arranged on the collector with a gap, and the gap and the cover are placed on the insulating member. The irradiation target is arranged so that the irradiation holes of the irradiation target communicate with each other.
In the present invention, when electrons are irradiated from the cathode electrode toward the inner side surface of the irradiated body, the inner side surface is melted and molten gas is generated and stays in the irradiation hole of the irradiated body. In order to discharge this molten gas from the irradiation hole, it is necessary to provide a space below the irradiation target object so as to communicate with the outside.
According to the present invention, the pair of flat plate-shaped insulating members are arranged with a gap therebetween, and the irradiated body is arranged on the insulating member so that the gap and the irradiation hole of the irradiated body communicate with each other. Therefore, the molten gas can be discharged from the irradiation hole to the outside, and the molten gas can be prevented from staying in the irradiation hole.

The surface reforming apparatus of the present invention controls a moving mechanism for moving the collector, an electron generating power supply for applying a voltage pulse to the cathode electrode, a drive of the moving mechanism, and an application timing of the voltage pulse. A control device is provided, wherein the control device drives the moving mechanism to insert the tip end portion of the cathode electrode into the irradiation hole, applies the voltage pulse, and radiates electrons from the cathode electrode. And
According to the present invention, since it is possible to smooth the inner surface of the irradiated body only by inserting the tip of the cylindrical cathode electrode into the irradiation hole of the irradiated body, a large number of metal protrusions are formed on the cathode electrode. It is possible to modify the inner side surface of the irradiation hole of the irradiation target with a simple configuration without the need to provide a magnet or to provide a magnet in the vicinity of the cathode electrode for additional structural changes.

In the surface modification device of the present invention, the control device drives the moving mechanism to change a relative position between the tip end portion of the cathode electrode and the irradiation target, and applies the voltage pulse to generate an electron from the cathode electrode. It is characterized in that the irradiation of is repeated a plurality of times.
Further, the present invention has a cylindrical cathode electrode, a collector for collecting electrons emitted from the cathode electrode, and an insulating member provided between the collector and the irradiation target, A surface modification method of emitting electrons toward an inner surface of an irradiation hole, comprising a moving step of changing a relative position between the tip end portion of the cathode electrode and the irradiation target, and applying the voltage pulse to the cathode electrode. And the irradiation step of irradiating electrons is repeated a plurality of times to modify the entire inner surface.
According to the present invention, it is possible to perform electron irradiation a plurality of times while changing the relative position of the tip end portion of the cathode electrode and the irradiation target, so that even if the irradiation hole of the irradiation target is deep, It becomes possible to melt and smooth the entire side surface.

The surface modification device of the present invention is characterized in that the cathode electrode has a cross-sectional diameter on the order of 1 mm.
Conventionally, the diameter of the cross section of the cathode electrode used in the surface reforming apparatus is several tens of millimeters, whereas in the present invention, the diameter of the cross section of the cathode electrode is 1 mm order which is smaller than the conventional one. ing. By changing the diameter of the cross section of the cathode electrode to a smaller one, it is easy to generate a discharge with sparks between the cathode electrode and the inner surface of the irradiation hole of the irradiation target, and the inner surface of the irradiation target can be easily It becomes possible to smooth by the structure.

The surface reforming apparatus of the present invention is characterized in that the cathode electrode is formed by machining tungsten, titanium, copper or brass as a material.
For the cathode electrode of the present invention, a metal such as copper, copper tungsten, titanium, stainless steel, steel or aluminum is machined and used. It is preferable that the material is made of tungsten, titanium, copper or brass and is machined. This is because the cathode electrode formed of such a material easily emits electrons and easily discharges.

The surface reforming apparatus of the present invention has a simple structure such that a cathode electrode having a columnar cross-section with a diameter of the order of 1 mm and an insulating member arranged between the collector and the object to be irradiated are used to form the irradiation hole of the object to be irradiated. Since the inner surface can be modified, costs such as manufacturing costs and maintenance costs can be significantly reduced.
Further, according to the present invention, since it is possible to perform electron irradiation a plurality of times while changing the relative position between the tip of the cathode electrode and the irradiation target, even when the irradiation hole of the irradiation target is deep. It becomes possible to melt and smooth the entire inner surface.

It is sectional drawing of the right side which shows the surface modification apparatus 100 of this invention. It is a flowchart which shows the flow of the surface modification process by the surface modification apparatus 100 of this invention. It is a schematic diagram which shows the arrangement|positioning relationship of the cathode electrode 5A and the to-be-irradiated body 7 in the surface modification process of this invention. It is another schematic diagram which shows the arrangement|positioning relationship of the cathode electrode 5A and the to-be-irradiated body 7 in the surface modification process of this invention. It is a schematic diagram which shows the flow of the electron in the surface modification process of this invention. It is a schematic diagram which shows the arrangement|positioning relationship of the to-be-irradiated body 7, the insulating member 8, and the table 5C of this invention.

FIG. 1 schematically shows a preferred embodiment of the surface modification device 100 of the present invention. The position of the attachment device in FIG. 1 is different from the actual arrangement of the surface modification device. FIG. 1 is a cross-sectional view of the surface reforming apparatus as viewed from the right side surface, with the surface provided with a sealing door 1A that closes an opening for taking in and out the irradiation target 7 in the vacuum chamber 1 as the front surface. Is.

The surface modification device 100 includes a vacuum chamber 1, a table moving mechanism 2, a vacuum device 3, a rare gas supply device 4, an electron generation device 5, a purification device 6, an insulating member 8, and a control device 9. Comprises. The irradiated body 7 is placed on the table moving mechanism 2 via an insulating member 8. In the surface modification apparatus shown in FIG. 1, the irradiated body 7 is formed in a cylindrical shape, and a circular irradiation hole 7A is formed in the central portion.

The vacuum chamber 1 is a housing that houses the irradiation target 7 and maintains airtightness, and is installed on a base.
Further, the vacuum chamber 1 has an opening for taking in and out the irradiated body 7 on the front surface of the surface reforming apparatus, and a closed door 1A for closing the opening is provided. The vacuum chamber 1 can be closed by closing the closed door 1A.

The table moving mechanism 2 is a device that moves the table 5C in a horizontal 1-axis direction, another horizontal 1-axis direction orthogonal to the horizontal 1-axis direction, and a vertical direction. The table moving mechanism 2 includes a moving body 2A capable of reciprocating in a horizontal 1-axis direction, and a moving body 2B capable of reciprocating in another horizontal 1-axis direction orthogonal to the horizontal 1-axis direction and capable of reciprocating in a vertical direction. .. Further, a table 5C on which the irradiated body 7 is placed is placed via the insulating member 8.

The vacuum device 3 is a device that decompresses the inside of the closed vacuum chamber 1 to a substantial vacuum with an atmospheric pressure of 0.1 Pa or less. The vacuum device 3 depressurizes the inside of the vacuum chamber 1 by evacuating the air in the vacuum chamber 1 by a vacuum pump, so-called vacuuming. The vacuum pump includes a first pump 3A and a second pump 3B. Specifically, a scroll pump or a rotary pump is suitable for the first pump 3A, and a turbo molecular pump or an oil diffusion pump is suitable for the second pump 3B.

After the air inside the vacuum chamber 1 is evacuated, the flow rate adjusting valves 3C and 3D are closed to keep the inside of the vacuum chamber 1 in a state close to a vacuum. The vacuum pump is in operation while irradiating electrons, evacuates the vacuum chamber 1 and maintains the reduced pressure state in the vacuum chamber 1.

The rare gas supply device 4 is a device that supplies a rare gas into the vacuum chamber 1. The rare gas promotes the generation of plasma. The rare gas includes helium, neon, argon, krypton, xenon, and radon, which are elements of Group 18 of the long periodic table. In the present invention, a rare gas and a gas having low chemical reactivity such as nitrogen gas are collectively referred to as an inert gas.

The rare gas supply device 4 specifically includes a cylinder 4A enclosing liquefied argon, a pipe 4B connected to the vacuum chamber 1, and a valve 4C opening the cylinder 4A. The surface reforming apparatus of the embodiment is designed so that the pressure inside the chamber 1 can be maintained at a reduced pressure within a range of 0.03 Pa to 0.1 Pa.

The electron generation device 5 is a device for generating electrons in the vacuum chamber 1 and melting the inner surface 7B of the irradiation target 7. The electron generator 5 includes a narrow and long cathode electrode 5A that is an electron gun, a ring-shaped anode electrode 5B that generates plasma, a table 5C that collects electrons, and a solenoid 5D that forms a magnetic field. A cathode holder 5E holding the cathode electrode 5A, a ground line 5F grounding the table 5C, an electron generating power supply device 5H, and a plasma generating power supply device 5J.

The cathode electrode 5A is an electrode that emits electrons while generating a spark from the tip portion 51A, and the upper end portion is fixed to the cathode holder 5E.
By inserting the cathode electrode 5A into the irradiation hole 7A of the irradiation target 7 and applying a DC high voltage pulse (several kV to several tens kV) between the cathode electrode 5A and the table 5C, electrons are emitted through the gas plasma. Are discharged from the tip portion 51A with sparks.
The cathode electrode 5A has a columnar shape with a narrow width and a long length and a circular cross section. The optimum size of the cross-sectional diameter Φ of the cathode electrode 5A varies depending on the diameter of the irradiation hole 7A of the irradiation target 7. If the cross-sectional diameter Φ of the cathode electrode 5A is too large, the irradiation balance is lost and the irradiation target is The inner surface 7B of 7 cannot be melted. Therefore, the diameter Φ is preferably 1.0 mm or more and 10.0 mm or less, and more preferably the diameter Φ is 1.5 mm when the diameter of the irradiation hole 7A is 10.0 mm. If the size is 20.0 mm, the diameter Φ is preferably 5.0 mm.
In addition, since the tip portion 51A of the cathode electrode 5A wears and the shape changes into a round shape as it is used, it is preferable to use a cathode electrode 5A having a length of 100.0 mm or more, and more preferably a long length. 200.0 mm. This is because if the cathode electrode 5A is too short, the number of times the cathode electrode 5A needs to be replaced increases and the labor required for maintenance increases.
For the cathode electrode 5A, a metal such as copper, copper tungsten, titanium, stainless steel, steel, or aluminum is machined and used. It is preferable that the material is made of tungsten, titanium, copper or brass and is machined.

The anode electrode 5B is a ring-shaped plasma generation electrode having an inner diameter larger than the cross-sectional area of the cathode electrode 5A, and is a glow discharge electrode (anode) for converting low-pressure ionized gas in the space inside the vacuum chamber 1 into plasma. In the case of this embodiment, a capacitor charging/discharging circuit is used, but it is also possible to replace it with a non-polar system using a high frequency power source.

The table 5C is a plate-shaped member that plays a role of a collector that collects electrons emitted from the cathode electrode 5A, and is grounded to the vacuum chamber 1 by a ground line 5F. Further, the table 5C is reciprocally moved in the two horizontal axis directions and vertically reciprocally moved by the table moving mechanism 2. Therefore, the irradiated body 7 placed on the table 5C via the insulating member 8 also reciprocates in the horizontal two-axis direction and the vertical direction together with the table 5C.

The solenoid 5D is a member that forms a magnetic field in the vacuum chamber 1. Electrons emitted from the cathode electrode 5A are focused and accelerated by the magnetic field formed by the solenoid 5D. In the present embodiment, the solenoid 5D is not an essential constituent member and may be omitted.

The cathode holder 5E is a member that holds the cathode electrode 5A. A socket terminal is provided at the electrode attachment portion of the cathode holder 5E, and the cathode electrode 5A is energized without wiring work simply by attaching to the electrode attachment portion.

The electron-generating power supply device 5H is a high-voltage power supply that energizes the cathode electrode 5A and the table 5C, and generates a voltage pulse to generate electrons between the cathode electrode 5A and the irradiation target 7 according to an instruction from the control device 9. Apply.

The plasma generating power supply device 5J is provided between the cathode electrode 5A and the anode electrode 5B, and supplies a voltage for generating plasma in the ring of the ring-shaped anode electrode 5B. The plasma generating power supply device 5J includes an anode switch.

The purifying device 6 forcibly discharges the dirty gas in the vacuum chamber 1 including the slag generated from the irradiated surface of the irradiated body 7. The purification device 6 includes a cylinder 6A in which liquefied nitrogen gas is sealed, a pipe 6B connected to the vacuum chamber 1, and a valve 6C opening the cylinder 6A. The nitrogen gas expels dirty argon gas from the inside of the vacuum chamber 1 to clean the inside of the vacuum chamber 1.

FIG. 6 is a schematic diagram showing a positional relationship among the irradiated body 7, the insulating member 8 and the table 5C of the present invention.
The insulating member 8 is a pair of flat plate-shaped members for insulating between the table 5C and the irradiated body 7, and is made of a ceramic material such as tile. In particular, it is preferably formed of alumina ceramics from the viewpoint of energy efficiency.
The insulating member 8 is placed on the table 5C with a gap 82 therebetween, and the irradiated body 7 is arranged on the insulating member 8 so that the gap 82 communicates with the irradiation hole 7A of the irradiated body 7. .. Specifically, the irradiation target 7 is placed so that the center of the gap 82 formed by the insulating member 8 coincides with the center of the irradiation hole 7A, and the molten gas accumulated in the irradiation hole 7A is applied to the irradiation hole 7A. Can be discharged to the outside through the gap 82. Further, a part of the outer side surface of the irradiated body 7 is placed on the insulating member 8, so that the irradiated body 7 is stably fixed on the insulating member 8 and the space between the table 5C and the irradiated body 7 is fixed. Is insulated.
In the present embodiment, the insulating member 8 is a pair of flat plate-shaped members, but may have any shape as long as the molten gas in the irradiation hole 7A can be discharged to the outside. For example, the insulating member 8 having a through hole communicating with the outside may be placed on the table 5C, and the irradiation target 7 may be placed so that the through hole and the irradiation hole 7A communicate with each other.

The control device 9 is a device that controls the entire surface reforming device 100, and includes a CPU (Central Processing Unit), a ROM (Read Only Memory), a RAM (Random Access Memory), and the like.
The control device 9 drives and controls the table moving mechanism 2 to move the table 5C. Further, the drive control of the vacuum device 3, the rare gas supply device 4, and the purification device 6 and the application timing of the voltage pulse of the electron generation device 5 are controlled.

(Flow of Surface Modification Treatment of Surface Modification Device 100)
FIG. 2 is a flow chart showing the flow of the surface modification treatment by the surface modification apparatus 100 of the present invention, and FIG. 3 is the positional relationship between the cathode electrode 5A and the irradiation target 7 in the surface modification treatment of the present invention. It is a schematic diagram which shows. In addition, FIG. 4 is another schematic diagram showing the positional relationship between the cathode electrode 5A and the irradiated body 7 in the surface modification treatment of the present invention.

The flow of the surface modification treatment of the surface modification apparatus 100 of the present invention will be described below.
First, the irradiated body 7 is fixed on the insulating member 8 placed on the table 5C (S1).
Next, the control device 9 starts up the plasma generating power supply device 5J and causes the anode electrode 5B to generate plasma in the vacuum chamber 1, and controls the rare gas supply device 4 to reduce the atmospheric pressure in the vacuum chamber 1. To do. Further, the power supply device 5H for electron generation is started up to be in a standby state (S2).
Further, the control device 9 drives the moving bodies 2A and 2B of the table moving mechanism 2 to move the table 5C in the horizontal direction, and adjusts so that the center of the irradiation hole 7A of the irradiated body 7 and the central axis of the cathode electrode 5A are aligned. Yes (S3).
Then, the control device 9 drives the moving body 2B of the table moving mechanism 2 to move the table 5C upward to move the irradiated body 7 upward, and to move the tip end 51A of the cathode electrode 5A to the irradiated body 7. The irradiation target 7 is inserted into the irradiation hole 7A and the tip end portion 51A of the cathode electrode 5A is moved to the height of L ₁ and then stopped (S4: moving step). Here, L _n (n=1, 2,..., N) is the height of the tip portion 51A of the cathode electrode 5A when the height is 0 with respect to the bottom surface of the irradiated body 7.
Next, the control device 9 applies a voltage pulse to irradiate electrons from the cathode electrode 5A a plurality of times (S5: irradiation step). At this time, the electrons emitted from the cathode electrode 5A spatially move to the inner side surface 7B of the irradiated body 7 having the shortest distance with a spark, and then the electrons move downward on the inner side surface 7B. Due to the thermal energy of this spark and the thermal energy due to the electrons flowing through the inner surface 7B, a certain range R ₁ of the surface portion of the inner surface 7B is melted in the vicinity of the tip portion 51A of the cathode electrode 5A (the hatched portion in FIG. 3). ), the molten gas generated by melting is discharged to the outside from the gap 82 formed by the insulating member 8.
When the depth of the irradiation hole 7A is deep (S6), the irradiation target 7 is moved further upward by driving the moving body 2B again, and the tip portion 51A of the cathode electrode 5A reaches the height of L ₂ . Stop and irradiate with electrons. According to the same principle as described above, a certain range R ₂ of the surface portion of the inner surface 7B is melted near the tip portion 51A of the cathode electrode 5A (hatched portion in FIG. 4), and the molten gas is discharged to the outside.
The control device 9 moves the irradiation target 7 upward until the entire surface of the inner surface 7B of the irradiation target 7 is melted and reformed, and the cathode electrode 5A is moved to L _n (n=1, 2,... ). , N) and then electron irradiation is repeated, and the process is terminated when the entire inner surface 7B is modified.

(Principle of Surface Modification Treatment of Surface Modification Device 100)
FIG. 5 is a schematic diagram showing the flow of electrons in the surface modification treatment of the present invention.
When a high voltage higher than a predetermined voltage is applied to emit electrons from the cathode electrode 5A, insulation breakdown occurs between the cathode electrode 5A and the inner side surface 7B of the irradiated body 7 and spark discharge occurs. Due to this phenomenon, electrons move from the tip portion 51A of the cathode electrode 5A to the inner side surface 7B closest to the tip portion 51A and generate a spark.
The inner side surface 7B closest to the tip portion 51A is melted by the thermal energy of the spark, and a current flows at once in the inner side surface 7B of the irradiated body 7 by the spark discharge, and the tip portion 51A is generated by the heat energy generated by the flowing current. The inner surface 7B close to is melted. After that, a creeping discharge is generated along the surface of the insulating member 8, and a large amount of electrons flow into the ground line 5F.
In this way, the inner surface 7B of the irradiation target 7 is melted and smoothed, and the inside of the irradiation hole 7A can be surface-modified.

Although several examples of the surface modification device of the embodiment described above have already been shown, the surface modification device can be modified within the range not departing from the technical idea of the present invention.

The surface reforming apparatus of the present invention is basically capable of reforming the surface of a conductive material, and is used for surface reforming of molds or industrial products such as metal, ceramics and plastics parts. Widely effective. In particular, it can be expected to modify the surface of the irradiated object having deep irradiation holes including the ribs. The present invention contributes to the improvement and development of the quality of industrial products.

1 vacuum chamber 2 table moving mechanism 3 vacuum device 4 rare gas supply device 5 electron generator 5A cathode electrode 5B anode electrode 5C table (collector)
5D Solenoid 5E Cathode Holder 5F Ground Line 5H Electron Generation Power Supply Device 5J Plasma Generation Power Supply Device 51A Tip 6 Purification Device 7 Irradiation Target 7A Irradiation Hole 7B Inner Side 8 Insulation Member 9 Control Device 100 Surface Modification Device

Claims (8)

A surface reforming apparatus comprising: a cylindrical cathode electrode that emits electrons toward the inner surface of an irradiation hole of an irradiation target; and a collector that collects electrons emitted from the cathode electrode, wherein the collector and the A surface reforming device, characterized in that an insulating member is provided between the object to be irradiated and the object to be irradiated. 2. The surface modification according to claim 1, wherein the collector is a flat table, the insulating member is arranged on the collector, and the irradiated body is arranged on the insulating member. Quality equipment. The insulating member is a pair of flat plate-shaped members, the insulating member is arranged on the collector with a gap, and the gap communicates with the irradiation hole of the irradiation target on the insulating member. The surface reforming apparatus according to claim 1 or 2, wherein the object to be irradiated is arranged as described above. The surface reforming device includes a moving mechanism for moving the collector, an electron generating power source for applying a voltage pulse to the cathode electrode, and a control device for controlling the driving of the moving mechanism and the application timing of the voltage pulse. The control device drives the moving mechanism to insert the tip portion of the cathode electrode into the irradiation hole, applies the voltage pulse, and irradiates electrons from the cathode electrode. Item 4. The surface modification device according to any one of items 1 to 3. The control device drives the moving mechanism to change the relative position between the tip of the cathode electrode and the irradiation target, applies the voltage pulse, and irradiates electrons from the cathode electrode a plurality of times. The surface modification device according to claim 4, wherein the surface modification device is repeated. The surface modification device according to claim 1, wherein a diameter of a cross section of the cathode electrode is on the order of 1 mm. 7. The surface modification device according to claim 1, wherein the cathode electrode is formed by machining tungsten, titanium, copper or brass as a material. An inner surface of an irradiation hole of the irradiation target, which has a cylindrical cathode electrode, a collector for collecting electrons emitted from the cathode electrode, and an insulating member provided between the collector and the irradiation target. A surface modification method for emitting electrons toward
The moving step of changing the relative position between the tip of the cathode electrode and the irradiation target and the irradiation step of applying a voltage pulse to irradiate electrons from the cathode electrode are repeated a plurality of times to modify the entire inner surface. A surface modification method characterized by qualifying.

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