JP6741034B2 - Semiconductor laser device - Google Patents
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Description
本発明は、複数の半導体レーザを駆動する半導体レーザ駆動回路に関する。 The present invention relates to a semiconductor laser drive circuit that drives a plurality of semiconductor lasers.
複数の半導体レーザを駆動する半導体レーザ駆動回路において、特許文献１は、各々の半導体レーザに対してＡＰＣ（オートパワーコントロール）回路を設け、このＡＰＣ回路により、各々の半導体レーザの出力を所定値に制御することにより独立に安定化させている。 In a semiconductor laser drive circuit for driving a plurality of semiconductor lasers, Patent Document 1 discloses that an APC (auto power control) circuit is provided for each semiconductor laser, and the output of each semiconductor laser is set to a predetermined value by this APC circuit. It is stabilized independently by controlling.
しかしながら、特許文献１では、ＡＰＣ回路が半導体レーザと同数だけ必要となり、構成が複雑化する。また、複数の半導体レーザを直列に接続した場合には、駆動電流が共通となるため、上述した手法を用いることはできない。１つの半導体レーザの出力に基づきＡＰＣ回路で光量調整を行うと、その他の半導体レーザの出力を安定化することはできない。 However, in Patent Document 1, the same number of APC circuits as semiconductor lasers are required, which complicates the configuration. Further, when a plurality of semiconductor lasers are connected in series, the drive current is common, and therefore the above method cannot be used. If the light amount is adjusted by the APC circuit based on the output of one semiconductor laser, the output of the other semiconductor lasers cannot be stabilized.
また、全ての半導体レーザの合成出力に対してＡＰＣ制御することはできるが、直列に接続された半導体レーザは、駆動回路の浮遊成分（例えば浮遊容量）が大きくなるため、高周波成分が減衰して、高速にＡＰＣ制御できない。 Further, although the APC control can be performed on the combined output of all the semiconductor lasers, the semiconductor lasers connected in series have a large stray component (for example, stray capacitance) of the drive circuit, so that high frequency components are attenuated. , APC cannot be controlled at high speed.
また、並列に接続された半導体レーザにおいても、例えば浮遊成分が並列に接続されて大きくなるため、高周波成分が減衰し、高速にＡＰＣ制御できない。 Also in the semiconductor lasers connected in parallel, for example, the floating components are connected in parallel and become large, so that the high frequency components are attenuated and the APC control cannot be performed at high speed.
本発明の課題は、高速にＡＰＣ制御することができる半導体レーザ駆動回路を提供することにある。 An object of the present invention is to provide a semiconductor laser drive circuit capable of high-speed APC control.
上記の課題を解決するために、本発明に係る半導体レーザ駆動装置は、直列に接続され
た複数の半導体レーザと、前記複数の半導体レーザに直列に接続され、前記複数の半導体レーザに電流を流す電流源と、前記電流源を駆動して前記電流源の電流を制御する電流源駆動回路と、前記複数の半導体レーザからのレーザ光を検出する検出手段と、前記複数の半導体レーザの内の最後の半導体レーザから最後の半導体レーザ１個以上の半導体レーザに接続された電流制御素子と、前記検出手段の出力に基づきが所定値になるように前記電流制御素子を制御することにより前記直列に接続された複数の半導体レーザに流れる電流を前記１個以上最後の半導体レーザへの電流と前記電流制御素子への電流とに分岐するように制御する、前記電流源駆動回路よりも高速に処理する電流量制御回路と、を備えることを特徴とする。
In order to solve the above-mentioned problems, a semiconductor laser driving device according to the present invention includes a plurality of semiconductor lasers connected in series, and a plurality of semiconductor lasers connected in series, and a current flows through the plurality of semiconductor lasers. A current source, a current source drive circuit that drives the current source to control the current of the current source, a detection unit that detects laser light from the plurality of semiconductor lasers, and a last one of the plurality of semiconductor lasers. From the semiconductor laser of the last semiconductor laser to one or more semiconductor lasers, and the current control element is controlled so that becomes a predetermined value on the basis of the output of the detecting means. A current that is processed at a higher speed than the current source drive circuit that controls the current flowing through the plurality of semiconductor lasers to be branched into a current to the one or more last semiconductor lasers and a current to the current control element. And a quantity control circuit.
また、半導体レーザ駆動回路は、並列に接続された複数の半導体レーザと、前記複数の半導体レーザに接続される電圧源と、前記複数の半導体レーザに対応して設けられ、前記半導体レーザに直列に接続された複数の電流制御素子と、前記複数の半導体レーザからのレーザ光を検出する検出手段と、前記検出手段の出力に基づき前記複数の電流制御素子の内の１つの電流制御素子を除く残りの電流制御素子を駆動することにより前記残りの半導体レーザに電流を流す駆動回路と、前記検出手段の出力に基づき前記１つの電流制御素子
を制御することにより前記検出手段の出力を所定値に制御するパワー制御回路とを備えることを特徴とする。
The semiconductor laser drive circuit is provided corresponding to the plurality of semiconductor lasers connected in parallel, the voltage source connected to the plurality of semiconductor lasers, and the plurality of semiconductor lasers, and is connected in series to the semiconductor lasers. A plurality of connected current control elements, detection means for detecting laser light from the plurality of semiconductor lasers, and the rest except one of the current control elements based on the output of the detection means. Driving circuit for driving a current to the remaining semiconductor laser by driving the current control element, and controlling the one current control element based on the output of the detection means to control the output of the detection means to a predetermined value. And a power control circuit that operates.
本発明に係る半導体レーザ駆動回路によれば、電流量制御回路が直列に接続された複数の半導体レーザに流れる電流を１個以上の半導体レーザへの電流と電流制御素子への電流とに分岐するように制御する。電流量制御回路による制御対象は、１個以上の半導体レーザへの電流と電流制御素子とによる小さな閉回路で閉じており、閉回路の一端は、基準電位に固定されているので、浮遊成分が小さいため、複数の半導体レーザを直列に接続した場合でも高速にＡＰＣ制御することができる半導体レーザ駆動回路を提供できる。 According to the semiconductor laser drive circuit of the present invention, the current flowing through the plurality of semiconductor lasers in which the current amount control circuit is connected in series is branched into a current for one or more semiconductor lasers and a current for the current control element. To control. The object controlled by the current amount control circuit is closed by a small closed circuit formed by the current to one or more semiconductor lasers and the current control element, and one end of the closed circuit is fixed to the reference potential, so that the floating component Since it is small, it is possible to provide a semiconductor laser drive circuit that can perform APC control at high speed even when a plurality of semiconductor lasers are connected in series.
以下、本発明の半導体レーザ駆動回路の実施の形態について、図面を参照しながら詳細に説明する。 Hereinafter, embodiments of a semiconductor laser drive circuit of the present invention will be described in detail with reference to the drawings.
図１は、本発明の実施例１に係る半導体レーザ駆動回路の構成を示す回路図である。この半導体レーザ駆動回路は、定電流源２、電流源駆動回路３、複数の半導体レーザＬＤ１〜ＬＤＮ、ＭＯＳＦＥＴ４、フォトダイオード（ＰＤ）５、電流量制御回路６ａを有している。 First Embodiment FIG. 1 is a circuit diagram showing a configuration of a semiconductor laser drive circuit according to a first embodiment of the present invention. This semiconductor laser drive circuit has a constant current source 2, a current source drive circuit 3, a plurality of semiconductor lasers LD1 to LDN, a MOSFET 4, a photodiode (PD) 5, and a current amount control circuit 6a.
複数の半導体レーザＬＤ１〜ＬＤＮは、直列に接続され、最初の半導体レーザのＬＤ１のアノード（一端）に電流源２が接続されている。電流源２は、複数の半導体レーザＬＤ１〜ＬＤＮに定電流を流す。 The plurality of semiconductor lasers LD1 to LDN are connected in series, and the current source 2 is connected to the anode (one end) of LD1 of the first semiconductor laser. The current source 2 supplies a constant current to the plurality of semiconductor lasers LD1 to LDN.
電流源駆動回路３は、電流源２を駆動して電流源２の電流を制御する。フォトダイオード５は、本発明の検出手段に対応し、複数の半導体レーザＬＤ１〜ＬＤＮからの合成レーザ光を検出する。 The current source drive circuit 3 drives the current source 2 and controls the current of the current source 2. The photodiode 5 corresponds to the detecting means of the present invention and detects the combined laser light from the plurality of semiconductor lasers LD1 to LDN.
ＭＯＳＦＥＴ４は、本発明の電流制御素子に対応し、複数の半導体レーザＬＤ１〜ＬＤＮの内の最後の半導体レーザＬＤＮのアノードにドレインが接続されている。ＭＯＳＦＥＴ４のソースは基準電位、例えばグランドに接続される。ＭＯＳＦＥＴ４のゲートは電流量制御回路６ａに接続される。 The MOSFET 4 corresponds to the current control element of the present invention, and has a drain connected to the anode of the last semiconductor laser LDN among the plurality of semiconductor lasers LD1 to LDN. The source of the MOSFET 4 is connected to a reference potential, eg ground. The gate of the MOSFET 4 is connected to the current amount control circuit 6a.
電流量制御回路６ａは、フォトダイオード５の出力に基づきＭＯＳＦＥＴ４を制御することにより半導体レーザＬＤＮの電流量を制御する。また、電流量制御回路６ａは、フォトダイオード５の出力が所定値になるように制御することにより半導体レーザＬＤＮの電流量を制御する。 The current amount control circuit 6a controls the MOSFET 4 based on the output of the photodiode 5 to control the current amount of the semiconductor laser LDN. Further, the current amount control circuit 6a controls the current amount of the semiconductor laser LDN by controlling the output of the photodiode 5 to a predetermined value.
次にこのように構成された実施例１の半導体レーザ駆動回路の動作を図１を参照しながら説明する。 Next, the operation of the semiconductor laser drive circuit of the first embodiment having the above configuration will be described with reference to FIG.
まず、複数の半導体レーザＬＤ１〜ＬＤＮには、電流源２からの電流Ｉ２が流れる。この電流Ｉ２は、並列に接続されたＭＯＳＦＥＴ４と半導体レーザＬＤＮとに分岐する。ＭＯＳＦＥＴ４に電流Ｉ４が流れ、半導体レーザＬＤＮに電流（Ｉ２−Ｉ４）が流れる。 First, the current I2 from the current source 2 flows through the plurality of semiconductor lasers LD1 to LDN. This current I2 is branched to the MOSFET 4 and the semiconductor laser LDN which are connected in parallel. A current I4 flows through the MOSFET 4 and a current (I2-I4) flows through the semiconductor laser LDN.
電流Ｉ４は、フォトダイオード５からの出力に基づき、電流量制御回路６ａによりＭＯＳＦＥＴ４を制御することにより決定される。電流源２の電流値制御は、全ての半導体レーザＬＤ１〜ＬＤＮや配線の浮遊成分が影響するため、高速に制御することはできない。 The current I4 is determined by controlling the MOSFET 4 by the current amount control circuit 6a based on the output from the photodiode 5. The current value control of the current source 2 cannot be performed at high speed because all the semiconductor lasers LD1 to LDN and the floating components of the wiring influence.
これに対して、電流量制御回路６ａによる制御対象は、半導体レーザＬＤＮとＭＯＳＦＥＴ４とによる小さな回路で閉じており、浮遊成分は小さいため、高速なＡＰＣ制御が可能となる。 On the other hand, the object to be controlled by the current amount control circuit 6a is closed by a small circuit including the semiconductor laser LDN and the MOSFET 4, and since the floating component is small, high-speed APC control is possible.
このように実施例１の半導体レーザ駆動回路によれば、複数の半導体レーザＬＤ１〜ＬＤＮの全体の出力は電流源２を用いて制御することができる。また、直列に接続された複数の半導体レーザＬＤ１〜ＬＤＮの浮遊成分の影響を受けず、半導体レーザＬＤＮとＭＯＳＦＥＴ４とによる小さい回路でＡＰＣ回路が閉じているため、浮遊成分は小さくなり、高速にＡＰＣ制御が可能となる。また、１つの半導体レーザＬＤＮ分の光量の範囲で、ＡＰＣ制御することができる。 As described above, according to the semiconductor laser drive circuit of the first embodiment, the total output of the plurality of semiconductor lasers LD1 to LDN can be controlled using the current source 2. Further, since the APC circuit is closed by a small circuit formed by the semiconductor laser LDN and the MOSFET 4 without being affected by the stray components of the plurality of semiconductor lasers LD1 to LDN connected in series, the stray components are reduced and the APC is performed at high speed. It becomes possible to control. In addition, APC control can be performed within the light amount range of one semiconductor laser LDN.
さらに、フォトダイオード５から電流量制御回路６ａに高速でフィードバックがかかるため、低速なノイズを除去することができる。 Furthermore, since feedback is applied from the photodiode 5 to the current amount control circuit 6a at high speed, low-speed noise can be removed.
図２は、本発明の実施例１の変形例に係る半導体レーザ駆動回路の構成を示すブロック図である。図１に示す実施例１では、半導体レーザＬＤＮのみＭＯＳＦＥＴ４を用いて光量を調整した。 FIG. 2 is a block diagram showing the configuration of a semiconductor laser drive circuit according to a modification of the first embodiment of the present invention. In Example 1 shown in FIG. 1, the light amount was adjusted using the MOSFET 4 only for the semiconductor laser LDN.
これに対して、実施例１の変形例は、最後の半導体レーザＬＤＮから最後の半導体レーザＬＤＮを含む２個目の半導体レーザＬＤＮ−１のアノードにＭＯＳＦＥＴ４のドレインを接続したものである。 On the other hand, in the modification of the first embodiment, the drain of the MOSFET 4 is connected to the anodes of the second semiconductor laser LDN-1 including the final semiconductor laser LDN to the final semiconductor laser LDN.
実施例１の変形例によれば、複数の半導体レーザＬＤ１〜ＬＤＮ−２に電流Ｉ２が流れ、ＭＯＳＦＥＴ４に電流Ｉ４が流れ、半導体レーザＬＤＮ−１，ＬＤＮに電流（Ｉ２−Ｉ４）が流れる。これにより、半導体レーザＬＤＮ−１，ＬＤＮの２個分の光量範囲で高速にＡＰＣ制御が可能となる。 According to the modification of the first embodiment, the current I2 flows through the plurality of semiconductor lasers LD1 to LDN-2, the current I4 flows through the MOSFET 4, and the current (I2-I4) flows through the semiconductor lasers LDN-1 and LDN. This enables high-speed APC control in the light amount range of two semiconductor lasers LDN-1 and LDN.
また、電流源２からの電流を分岐させるポイントにより、電流量制御回路６ｂによる制御対象の浮遊成分が変わってくる。このため、所望の帯域でＡＰＣ制御が実現できる分岐ポイントを選ぶことにより、最大の光量調整幅でＡＰＣ制御することが可能となる。 Further, the floating component to be controlled by the current amount control circuit 6b changes depending on the point where the current from the current source 2 is branched. Therefore, by selecting a branch point that can realize APC control in a desired band, it becomes possible to perform APC control with the maximum light amount adjustment range.
なお、実施例１の変形例では、最後の半導体レーザＬＤＮから２個目の半導体レーザＬＤＮ−１のアノードで電流を分岐させたが、最後の半導体レーザＬＤＮから３個目以上の半導体レーザのアノードで電流を分岐させても良い。 In the modification of the first embodiment, the current is branched from the last semiconductor laser LDN to the anode of the second semiconductor laser LDN-1, but the anodes of the third or more semiconductor lasers from the last semiconductor laser LDN are branched. The current may be branched with.
図３は、本発明の実施例２に係る半導体レーザ駆動回路の構成を示す回路図である。図 ３に示す半導体レーザ駆動回路は、図１に示す半導体レーザ駆動回路に対して、電流源駆動回路３がフォトダイオード５からのレーザ光に基づき電流源２の電流を制御することを特徴とする。 FIG. 3 is a circuit diagram showing the configuration of the semiconductor laser drive circuit according to the second embodiment of the present invention. The semiconductor laser drive circuit shown in FIG. 3 is characterized in that, in contrast to the semiconductor laser drive circuit shown in FIG. 1, the current source drive circuit 3 controls the current of the current source 2 based on the laser light from the photodiode 5. ..
電流源駆動回路３は、電流源２の電流を低速処理し、光量の範囲を大きくすることが
できる。また、電流量制御回路６ｃにより、１つの半導体レーザＬＤＮ分の光量の範囲で
、高速にＡＰＣ制御することができる。
The current source drive circuit 3 can process the current of the current source 2 at a low speed to increase the range of the amount of light. In addition, the current amount control circuit 6c enables high-speed APC control within a light amount range for one semiconductor laser LDN.
図４は、本発明の実施例２の変形例に係る半導体レーザ駆動回路の構成を示す回路図で
ある。図４に示す半導体レーザ駆動回路は、図２に示す半導体レーザ駆動回路に対して、
電流源駆動回路３がフォトダイオード５からのレーザ光に基づき電流源２の電流を制御
することを特徴とする。
FIG. 4 is a circuit diagram showing a configuration of a semiconductor laser drive circuit according to a modified example of the second embodiment of the present invention. The semiconductor laser drive circuit shown in FIG. 4 is different from the semiconductor laser drive circuit shown in FIG.
The current source drive circuit 3 controls the current of the current source 2 based on the laser light from the photodiode 5.
電流源駆動回路３は、電流源２の電流を低速処理し、光量の範囲を大きくすることが
できる。また、電流量制御回路６ｄにより、半導体レーザＬＤＮ−１，ＬＤＮの２個分の
光量範囲で高速にＡＰＣ制御が可能となる。
The current source drive circuit 3 can process the current of the current source 2 at a low speed to increase the range of the amount of light. Further, the current amount control circuit 6d enables high-speed APC control in the light amount range of two semiconductor lasers LDN-1 and LDN.
図５は、本発明の実施例３に係る半導体レーザ駆動回路の構成を示す回路図である。この半導体レーザ駆動回路は、複数の半導体レーザＬＤ１〜ＬＤＮ、複数のＭＯＳＦＥＴＱ１〜ＱＮ、ＬＤ駆動回路１０、アンプ１１，１２、ＡＰＣ回路１３、電圧源Ｖｃｃを有している。 FIG. 5 is a circuit diagram showing the configuration of the semiconductor laser drive circuit according to the third embodiment of the present invention. This semiconductor laser drive circuit has a plurality of semiconductor lasers LD1 to LDN, a plurality of MOSFETs Q1 to QN, an LD drive circuit 10, amplifiers 11 and 12, an APC circuit 13, and a voltage source Vcc.
複数の半導体レーザＬＤ１〜ＬＤＮは、並列に接続され、複数の半導体レーザＬＤ１〜ＬＤＮのアノードには、電圧源Ｖｃｃが接続されている。複数のＭＯＳＦＥＴＱ１〜ＱＮは、本発明の電流制御素子に対応し、複数の半導体レーザＬＤ１〜ＬＤＮに対応して設けられ、対応する半導体レーザに直列に接続されている。 The plurality of semiconductor lasers LD1 to LDN are connected in parallel, and the voltage source Vcc is connected to the anodes of the plurality of semiconductor lasers LD1 to LDN. The plurality of MOSFETs Q1 to QN correspond to the current control element of the present invention, are provided corresponding to the plurality of semiconductor lasers LD1 to LDN, and are connected in series to the corresponding semiconductor lasers.
フォトダイオード５は、本発明の検出手段に対応し、複数の半導体レーザＬＤ１〜ＬＤＮからのレーザ光を検出する。ＬＤ駆動回路１０は、フォトダイオード５の出力に基づきアンプ１１を介してＭＯＳＦＥＴＱ１〜ＱＮ−１を駆動することにより複数の半導体レーザＬＤ１〜ＬＤＮ−１に電流を流す。 The photodiode 5 corresponds to the detecting means of the present invention, and detects the laser light from the plurality of semiconductor lasers LD1 to LDN. The LD drive circuit 10 drives the MOSFETs Q1 to QN-1 via the amplifier 11 based on the output of the photodiode 5 to flow a current through the plurality of semiconductor lasers LD1 to LDN-1.
ＡＰＣ回路１３は、フォトダイオード５の出力に基づきアンプ１２を介してＭＯＳＦＥＴＱＮを駆動することによりフォトダイオード５の出力を所定値に制御する。 The APC circuit 13 controls the output of the photodiode 5 to a predetermined value by driving the MOSFET QN via the amplifier 12 based on the output of the photodiode 5.
このように実施例３の半導体レーザ駆動回路によれば、１つのＡＰＣ回路１３により１つのＭＯＳＦＥＴＱＮをオンオフ制御するのみで、高速にＡＰＣ制御が可能となる。 As described above, according to the semiconductor laser drive circuit of the third embodiment, the APC control can be performed at high speed only by controlling the ON/OFF of one MOSFET QN by one APC circuit 13.
本発明は、レーザ装置、レーザ加工装置などに利用できる。 INDUSTRIAL APPLICABILITY The present invention can be used in a laser device, a laser processing device, and the like.
２ 定電流源
３ 電流源駆動回路
４，Ｑ１〜ＱＮ ＭＯＳＦＥＴ
５ フォトダイオード（ＰＤ）
６ａ〜６ｄ 電流量制御回路
１０ ＬＤ駆動回路
１１，１２ アンプ
１３ ＡＰＣ回路
Ｖｃｃ 電圧源
ＬＤ１〜ＬＤＮ 半導体レーザ
2 constant current source 3 current source drive circuit 4, Q1 to QN MOSFET
5 Photodiode (PD)
6a to 6d Current amount control circuit 10 LD drive circuits 11 and 12 Amplifier 13 APC circuit Vcc Voltage source LD1 to LDN Semiconductor laser
Claims (1)
前記複数の半導体レーザに直列に接続され、前記複数の半導体レーザに電流を流す電流源と、
前記電流源を駆動して前記電流源の電流を制御する電流源駆動回路と、
前記複数の半導体レーザからのレーザ光を検出する検出手段と、
前記複数の半導体レーザの内の最後の半導体レーザに接続された電流制御素子と、
前記検出手段の出力が所定値になるように前記電流制御素子を制御することにより前記
直列に接続された複数の半導体レーザに流れる電流を前記最後の半導体レーザへの電流と
前記電流制御素子への電流とに分岐するように制御する、前記電流源駆動回路よりも高速に処理する電流量制御回路と、
を備えることを特徴とする半導体レーザ装置。 A plurality of semiconductor lasers connected in series,
A current source that is connected in series to the plurality of semiconductor lasers and supplies a current to the plurality of semiconductor lasers,
A current source drive circuit that drives the current source to control the current of the current source;
Detection means for detecting laser light from the plurality of semiconductor lasers,
A current control element connected to the last semiconductor laser of the plurality of semiconductor lasers;
By controlling the current control element so that the output of the detection means becomes a predetermined value, the current flowing through the plurality of semiconductor lasers connected in series is supplied to the last semiconductor laser and the current control element. A current amount control circuit that performs control at a higher speed than the current source drive circuit, which is controlled so as to branch to a current;
A semiconductor laser device comprising:
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| JPH0685361A (en) * | 1992-09-01 | 1994-03-25 | Fuji Photo Film Co Ltd | Semiconductor laser light source device |
| JP2991893B2 (en) * | 1993-05-31 | 1999-12-20 | 富士通株式会社 | Driving circuit for light emitting element and optical amplification repeater using the same |
| JPH10284789A (en) * | 1997-04-08 | 1998-10-23 | Nec Corp | Laser diode drive circuit |
| DE10053101A1 (en) * | 2000-10-26 | 2002-01-24 | Agfa Gevaert Ag | Process uses combined operation of two lasers with total energy sensed and used to control lasers |
| JP2004259965A (en) * | 2003-02-26 | 2004-09-16 | Orc Mfg Co Ltd | Current driving element control circuit and solid-state laser device using the same |
| US7792166B2 (en) * | 2005-06-24 | 2010-09-07 | Lockheed Martin Corporation | Apparatus and method for driving laser diodes |
| JP5471330B2 (en) * | 2009-07-14 | 2014-04-16 | 日亜化学工業株式会社 | Light emitting diode drive circuit and light emitting diode lighting control method |
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| US20120306404A1 (en) * | 2011-06-02 | 2012-12-06 | Immense Advance Technology Corp. | Led driver circuit |
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| JP6665835B2 (en) * | 2017-07-18 | 2020-03-13 | 株式会社島津製作所 | Semiconductor laser device |
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