JP6738812B2 - 波長変換発光デバイス - Google Patents
波長変換発光デバイス Download PDFInfo
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- JP6738812B2 JP6738812B2 JP2017535661A JP2017535661A JP6738812B2 JP 6738812 B2 JP6738812 B2 JP 6738812B2 JP 2017535661 A JP2017535661 A JP 2017535661A JP 2017535661 A JP2017535661 A JP 2017535661A JP 6738812 B2 JP6738812 B2 JP 6738812B2
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- emitting diode
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- 238000006243 chemical reaction Methods 0.000 title description 40
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 100
- 239000002019 doping agent Substances 0.000 claims description 56
- 239000000463 material Substances 0.000 claims description 43
- 230000005284 excitation Effects 0.000 claims description 32
- 230000007423 decrease Effects 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 11
- 239000012190 activator Substances 0.000 description 45
- 239000010410 layer Substances 0.000 description 20
- 239000002245 particle Substances 0.000 description 18
- 239000004065 semiconductor Substances 0.000 description 8
- 239000000919 ceramic Substances 0.000 description 6
- 229910052693 Europium Inorganic materials 0.000 description 5
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 description 5
- 239000011159 matrix material Substances 0.000 description 5
- 239000000758 substrate Substances 0.000 description 5
- 239000013543 active substance Substances 0.000 description 4
- 230000003287 optical effect Effects 0.000 description 4
- 229910052761 rare earth metal Inorganic materials 0.000 description 4
- 150000002910 rare earth metals Chemical class 0.000 description 4
- 230000005281 excited state Effects 0.000 description 3
- 230000003993 interaction Effects 0.000 description 3
- 229920001296 polysiloxane Polymers 0.000 description 3
- 238000001228 spectrum Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910052684 Cerium Inorganic materials 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 2
- 229910019990 cerium-doped yttrium aluminum garnet Inorganic materials 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000000695 excitation spectrum Methods 0.000 description 2
- 230000005283 ground state Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000000843 powder Substances 0.000 description 2
- 239000002096 quantum dot Substances 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- 102100032047 Alsin Human genes 0.000 description 1
- 101710187109 Alsin Proteins 0.000 description 1
- 239000004593 Epoxy Substances 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910010413 TiO 2 Inorganic materials 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000000149 argon plasma sintering Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000000295 emission spectrum Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000002223 garnet Substances 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000003760 hair shine Effects 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000001451 molecular beam epitaxy Methods 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- -1 phosphors Substances 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 239000002243 precursor Substances 0.000 description 1
- 229910002059 quaternary alloy Inorganic materials 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 1
- 229910010271 silicon carbide Inorganic materials 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 238000005245 sintering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910019655 synthetic inorganic crystalline material Inorganic materials 0.000 description 1
- 238000010345 tape casting Methods 0.000 description 1
- 239000012780 transparent material Substances 0.000 description 1
- 238000001429 visible spectrum Methods 0.000 description 1
- 239000011787 zinc oxide Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Luminescent Compositions (AREA)
- Led Device Packages (AREA)
- Optical Filters (AREA)
Description
Claims (13)
- 発光ダイオードによって生成されて、母材及びドーパントを有する蛍光体層によって変換される所定量の光に対して、増大する励起密度における前記蛍光体層の効率の所定の最大低下に合わせて、前記蛍光体層の最大ドーパント濃度を選定する、ことを有し、
前記蛍光体層は、2つ以上の領域を有し、
前記2つ以上の領域のうち、前記発光ダイオードに最も近く配置される領域が最も低いドーパント濃度を有し、前記発光ダイオードに最も遠く配置される領域が最も高いドーパント濃度を有する、
方法。 - 前記2つ以上の領域の各々内でドーパント濃度は均一である、請求項1に記載の方法。
- 前記2つ以上の領域は、
第1のドーパント濃度を持つ第1の領域と、
第2のドーパント濃度を持つ第2の領域と
を有し、
前記第2のドーパント濃度は前記第1のドーパント濃度よりも低く、且つ
前記蛍光体層は、前記発光ダイオードによって放たれた光が、前記第1の領域よりも前に前記第2の領域に到達するように配置される、
請求項1に記載の方法。 - 前記蛍光体層の前記2つ以上の領域中のドーパント濃度が傾斜される、請求項1に記載の方法。
- 前記ドーパントはEu2+である、請求項1に記載の方法。
- 前記ドーパントはCe3+である、請求項1に記載の方法。
- 第1のピーク波長を持つ光を放つ発光ダイオードと、
前記発光ダイオードによって放たれた光の経路内に配置された蛍光体であり、前記発光ダイオードによって放たれた光を吸収して、第2のピーク波長を持つ光を放つ蛍光体と
を有し、
前記蛍光体は母材及びドーパントを有し、且つ
前記発光ダイオードからの所定の発光において、前記蛍光体の効率の所定の最大低下を超えないように、前記ドーパントの濃度及び前記ドーパントの配置が選定されており、
前記蛍光体は、2つ以上の領域を有し、
前記2つ以上の領域のうち、前記発光ダイオードに最も近い領域が最も低いドーパント濃度を有し、前記発光ダイオードに最も遠い領域が最も高いドーパント濃度を有する、
構造体。 - 前記2つ以上の領域の各々が、前記発光ダイオードからの所定の発光において前記蛍光体の効率の所定の最大低下を超えないように選定されたドーパント濃度で、均一にドープされている、請求項7に記載の構造体。
- 前記2つ以上の領域は、
第1のドーパント濃度を持つ第1の領域と、
第2のドーパント濃度を持つ第2の領域と
を有し、
前記第2のドーパント濃度は前記第1のドーパント濃度よりも低く、且つ
前記蛍光体は、前記発光ダイオードによって放たれた光が、前記第1の領域よりも前に前記第2の領域に到達するように配置されている、
請求項7に記載の構造体。 - 前記第1及び第2の領域は、それぞれ、第1及び第2の層を有し、前記第2の層が、前記発光ダイオードと前記第1の層との間に配置されている、請求項9に記載の構造体。
- 前記第2の領域は、前記発光ダイオードに近接した層であり、
前記第1の領域は、前記第2の領域とは反対側の層であり、且つ
前記第2の領域と前記第1の領域との間で前記ドーパントの濃度が傾斜されている、
請求項9に記載の構造体。 - 前記ドーパントはEu2+である、請求項7に記載の構造体。
- 前記ドーパントはCe3+である、請求項7に記載の構造体。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562100194P | 2015-01-06 | 2015-01-06 | |
US62/100,194 | 2015-01-06 | ||
US201562182090P | 2015-06-19 | 2015-06-19 | |
US62/182,090 | 2015-06-19 | ||
PCT/EP2015/081123 WO2016110415A1 (en) | 2015-01-06 | 2015-12-23 | Wavelength converted light emitting device |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2018501659A JP2018501659A (ja) | 2018-01-18 |
JP6738812B2 true JP6738812B2 (ja) | 2020-08-12 |
Family
ID=54979704
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2017535661A Active JP6738812B2 (ja) | 2015-01-06 | 2015-12-23 | 波長変換発光デバイス |
Country Status (6)
Country | Link |
---|---|
US (1) | US10312417B2 (ja) |
EP (1) | EP3243222B1 (ja) |
JP (1) | JP6738812B2 (ja) |
KR (1) | KR102495967B1 (ja) |
CN (1) | CN107112399B (ja) |
WO (1) | WO2016110415A1 (ja) |
Families Citing this family (3)
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WO2019059065A1 (ja) * | 2017-09-21 | 2019-03-28 | 株式会社小糸製作所 | 灯具 |
US10837607B2 (en) * | 2017-09-26 | 2020-11-17 | Lumileds Llc | Light emitting device with improved warm-white color point |
DE102018120584A1 (de) * | 2018-08-23 | 2020-02-27 | Osram Opto Semiconductors Gmbh | Optoelektronisches halbleiterbauelement und verfahren zur herstellung eines optoelektronischen halbleiterbauelements |
Family Cites Families (16)
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US7768189B2 (en) | 2004-08-02 | 2010-08-03 | Lumination Llc | White LEDs with tunable CRI |
WO2005083036A1 (en) * | 2004-02-20 | 2005-09-09 | Gelcore Llc | Rules for efficient light sources using phosphor converted leds |
US7361938B2 (en) * | 2004-06-03 | 2008-04-22 | Philips Lumileds Lighting Company Llc | Luminescent ceramic for a light emitting device |
US20080165523A1 (en) * | 2005-01-10 | 2008-07-10 | Koninklijke Philips Electronics N.V. | Illumination System Comprising Ceramic Luminescence Converter |
KR101055772B1 (ko) * | 2005-12-15 | 2011-08-11 | 서울반도체 주식회사 | 발광장치 |
US7902564B2 (en) * | 2006-12-22 | 2011-03-08 | Koninklijke Philips Electronics N.V. | Multi-grain luminescent ceramics for light emitting devices |
CN101663769B (zh) * | 2007-04-17 | 2013-02-06 | 皇家飞利浦电子股份有限公司 | 照明系统 |
DE102008015941A1 (de) * | 2007-12-21 | 2009-06-25 | Osram Opto Semiconductors Gmbh | Beleuchtungseinrichtung |
JP5833547B2 (ja) * | 2009-06-01 | 2015-12-16 | 日東電工株式会社 | 発光セラミックおよびそれを使用する発光装置 |
TWI361216B (en) * | 2009-09-01 | 2012-04-01 | Ind Tech Res Inst | Phosphors, fabricating method thereof, and light emitting device employing the same |
CN103347982B (zh) * | 2010-12-01 | 2016-05-25 | 日东电工株式会社 | 具有掺杂浓度梯度的发射性陶瓷材料及其制造方法和使用方法 |
CN104169637B (zh) * | 2012-06-21 | 2015-09-16 | 松下知识产权经营株式会社 | 发光装置以及投影装置 |
JP6022839B2 (ja) * | 2012-07-20 | 2016-11-09 | スタンレー電気株式会社 | 発光装置 |
JP6135032B2 (ja) * | 2013-02-19 | 2017-05-31 | スタンレー電気株式会社 | 発光装置、車両用灯具及び応力逃がし部成型方法 |
JP5783302B2 (ja) * | 2013-07-03 | 2015-09-24 | 日亜化学工業株式会社 | フッ化物蛍光体及びそれを用いた発光装置並びに蛍光体の製造方法 |
US9466771B2 (en) * | 2014-07-23 | 2016-10-11 | Osram Sylvania Inc. | Wavelength converters and methods for making the same |
-
2015
- 2015-12-23 EP EP15813886.7A patent/EP3243222B1/en active Active
- 2015-12-23 KR KR1020177021933A patent/KR102495967B1/ko active IP Right Grant
- 2015-12-23 US US15/538,162 patent/US10312417B2/en active Active
- 2015-12-23 JP JP2017535661A patent/JP6738812B2/ja active Active
- 2015-12-23 WO PCT/EP2015/081123 patent/WO2016110415A1/en active Application Filing
- 2015-12-23 CN CN201580072653.3A patent/CN107112399B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
EP3243222A1 (en) | 2017-11-15 |
US20170373231A1 (en) | 2017-12-28 |
WO2016110415A1 (en) | 2016-07-14 |
JP2018501659A (ja) | 2018-01-18 |
US10312417B2 (en) | 2019-06-04 |
CN107112399A (zh) | 2017-08-29 |
EP3243222B1 (en) | 2021-02-17 |
KR102495967B1 (ko) | 2023-02-06 |
CN107112399B (zh) | 2020-11-13 |
KR20170102957A (ko) | 2017-09-12 |
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