JP6735930B2 - アルミニウム合金ターゲット及びその製造方法 - Google Patents
アルミニウム合金ターゲット及びその製造方法 Download PDFInfo
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- 229910000838 Al alloy Inorganic materials 0.000 title claims description 211
- 238000004519 manufacturing process Methods 0.000 title claims description 12
- 239000000654 additive Substances 0.000 claims description 101
- 230000000996 additive effect Effects 0.000 claims description 101
- 229910052751 metal Inorganic materials 0.000 claims description 36
- 239000002184 metal Substances 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 36
- 229910052748 manganese Inorganic materials 0.000 claims description 28
- 239000002245 particle Substances 0.000 claims description 28
- 229910052684 Cerium Inorganic materials 0.000 claims description 25
- 229910052726 zirconium Inorganic materials 0.000 claims description 20
- 229910052709 silver Inorganic materials 0.000 claims description 12
- 229910052758 niobium Inorganic materials 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- 229910052727 yttrium Inorganic materials 0.000 claims description 11
- 229910052779 Neodymium Inorganic materials 0.000 claims description 9
- 229910052746 lanthanum Inorganic materials 0.000 claims description 9
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 6
- 239000004033 plastic Substances 0.000 claims description 6
- 239000010408 film Substances 0.000 description 144
- 238000005452 bending Methods 0.000 description 27
- 238000010438 heat treatment Methods 0.000 description 16
- 229910000765 intermetallic Inorganic materials 0.000 description 16
- 238000002844 melting Methods 0.000 description 15
- 230000008018 melting Effects 0.000 description 15
- 230000000694 effects Effects 0.000 description 14
- 239000010409 thin film Substances 0.000 description 14
- 239000010410 layer Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 238000001312 dry etching Methods 0.000 description 11
- 239000000463 material Substances 0.000 description 11
- 230000015572 biosynthetic process Effects 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- 239000007769 metal material Substances 0.000 description 10
- 229910052759 nickel Inorganic materials 0.000 description 10
- 238000004544 sputter deposition Methods 0.000 description 10
- 238000001039 wet etching Methods 0.000 description 10
- 239000013078 crystal Substances 0.000 description 9
- 239000003870 refractory metal Substances 0.000 description 7
- 239000000758 substrate Substances 0.000 description 6
- 238000001000 micrograph Methods 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 229910052706 scandium Inorganic materials 0.000 description 5
- 230000003746 surface roughness Effects 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 238000000059 patterning Methods 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 3
- 238000004458 analytical method Methods 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 238000005242 forging Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000000879 optical micrograph Methods 0.000 description 3
- 239000000843 powder Substances 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- 238000005096 rolling process Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 238000000137 annealing Methods 0.000 description 2
- 229910052789 astatine Inorganic materials 0.000 description 2
- 238000004630 atomic force microscopy Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 239000007772 electrode material Substances 0.000 description 2
- 239000010419 fine particle Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000006104 solid solution Substances 0.000 description 2
- 238000005728 strengthening Methods 0.000 description 2
- UOACKFBJUYNSLK-XRKIENNPSA-N Estradiol Cypionate Chemical compound O([C@H]1CC[C@H]2[C@H]3[C@@H](C4=CC=C(O)C=C4CC3)CC[C@@]21C)C(=O)CCC1CCCC1 UOACKFBJUYNSLK-XRKIENNPSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000004642 Polyimide Substances 0.000 description 1
- 229910007541 Zn O Inorganic materials 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 1
- 238000010191 image analysis Methods 0.000 description 1
- 238000007561 laser diffraction method Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000013081 microcrystal Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000010587 phase diagram Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 230000001376 precipitating effect Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 238000001552 radio frequency sputter deposition Methods 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Images
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
- C22C21/06—Alloys based on aluminium with magnesium as the next major constituent
- C22C21/08—Alloys based on aluminium with magnesium as the next major constituent with silicon
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
- C23C14/165—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon by cathodic sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
- C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Ceramic Engineering (AREA)
- Physical Vapour Deposition (AREA)
- Electrodes Of Semiconductors (AREA)
Description
このようなアルミニウム合金ターゲットを用いて形成されたアルミニウム合金膜であれば、アルミニウム合金膜が優れた屈曲耐性を有し、優れた耐熱性を有する。また、アルミニウム合金膜は、エッチングも可能になる。
このようなアルミニウム合金ターゲットを用いて形成されたアルミニウム合金膜であれば、アルミニウム合金膜が優れた屈曲耐性を有し、さらに、優れた耐熱性を有する。また、アルミニウム合金膜は、エッチングも可能になる。
上記第2添加元素の含有量は、0.2原子%以上3.0原子%以下である。
このようなアルミニウム合金ターゲットを用いて形成されたアルミニウム合金膜であれば、アルミニウム合金膜が優れた屈曲耐性を有し、優れた耐熱性を有する。また、アルミニウム合金膜は、エッチングも可能になる。
このようなアルミニウム合金ターゲットを用いて形成されたアルミニウム合金膜であれば、アルミニウム合金膜が優れた屈曲耐性を有し、粒界に第3添加元素が析出することで優れた耐熱性を有する。また、また、アルミニウム合金膜は、エッチングも可能になる。
放電方式:DC放電
成膜温度:室温(25℃)
成膜圧力:0.3Pa
膜厚:200nm
表2に示すように、Al純金属に、Sc、Zrの第1添加元素が0.01at%以上1.0at%以下含有されているときに、Al合金膜の比抵抗が10μΩ・cm以下になることが分かる。また、Al純金属に、Mn、Siの第2添加元素が0.2at%以上3.0at%以下含有されているときにも、Al合金膜の比抵抗が10μΩ・cm以下になることが分かる。
表4は、Al合金インゴットに含まれる各元素の濃度分布の一例が示されている。
10、20…ガラス基板
11、21…活性層
12、22…ゲート絶縁膜
13、23…ゲート電極
15…保護層
16D、26D…ドレイン電極
16S、26S…ソース電極
Claims (4)
- Al純金属に、
Zr及びScと、Mo、Y、Nb、及びTiの群から選択される少なくとも1種の第1添加元素とが含有され、
Mn及びSiと、Mg及びAgの群から選択される少なくとも1種の第2添加元素とが含有され、
さらに、Ce、Nd、La、及びGdの群から選択される少なくとも1種の第3添加元素が含有され、
Zr及びScと、前記第1添加元素との含有量が0.01原子%以上1.0原子%以下であり、
Mn及びSiと、前記第2添加元素との含有量が0.2原子%以上3.0原子%以下であり、
前記第3添加元素の含有量が0.1原子%以上1.0原子%以下である
アルミニウム合金ターゲット。 - 請求項1に記載されたアルミニウム合金ターゲットであって、
粒子の平均粒径が10μm以上100μm以下である
アルミニウム合金ターゲット。 - 請求項2に記載されたアルミニウム合金ターゲットであって、
前記粒子間の粒界におけるCe、Mn、及びSiの少なくともいずれかの含有量が前記粒子内におけるCe、Mn、及びSiの少なくともいずれかの含有量よりも高い
アルミニウム合金ターゲット。 - Al純金属に、Zr及びScと、Mo、Y、Nb、及びTiの群から選択される少なくとも1種の第1添加元素とを含有させ、
Mn及びSiと、Mg及びAgの群から選択される少なくとも1種の第2添加元素とを含有させ、
さらに、Ce、Nd、La、及びGdの群から選択される少なくとも1種の第3添加元素を含有させ、
塑性加工した後、切り出しを行い、
Zr及びScと、前記第1添加元素との含有量が0.01原子%以上1.0原子%以下であり、
Mn及びSiと、前記第2添加元素との含有量が0.2原子%以上3.0原子%以下であり、
前記第3添加元素の含有量が0.1原子%以上1.0原子%以下であるアルミニウム合金ターゲットを製造する製造方法。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
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JP2018123158 | 2018-06-28 | ||
JP2018123158 | 2018-06-28 | ||
PCT/JP2019/013503 WO2020003666A1 (ja) | 2018-06-28 | 2019-03-28 | アルミニウム合金ターゲット及びその製造方法 |
Publications (2)
Publication Number | Publication Date |
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JPWO2020003666A1 JPWO2020003666A1 (ja) | 2020-07-09 |
JP6735930B2 true JP6735930B2 (ja) | 2020-08-05 |
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JP2019547326A Active JP6735930B2 (ja) | 2018-06-28 | 2019-03-28 | アルミニウム合金ターゲット及びその製造方法 |
Country Status (6)
Country | Link |
---|---|
US (1) | US20210140032A1 (ja) |
JP (1) | JP6735930B2 (ja) |
KR (1) | KR102571458B1 (ja) |
CN (1) | CN112204165B (ja) |
TW (1) | TWI766163B (ja) |
WO (1) | WO2020003666A1 (ja) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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JP7427576B2 (ja) * | 2020-04-16 | 2024-02-05 | 株式会社神戸製鋼所 | Al合金蒸着膜、ディスプレイ用配線膜、ディスプレイ装置及びスパッタリングターゲット |
WO2024167046A1 (ko) * | 2023-02-10 | 2024-08-15 | 주식회사 큐프럼 머티리얼즈 | 박막 트랜지스터 전극 및 반사 전극용 알루미늄, 망간, 티타늄 및 실리콘을 포함하는 합금 조성물 |
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US6329275B1 (en) * | 1995-10-12 | 2001-12-11 | Kabushiki Kaisha Toshiba | Interconnector line of thin film, sputter target for forming the wiring film and electronic component using the same |
JPH09228035A (ja) * | 1996-02-19 | 1997-09-02 | Hitachi Metals Ltd | 薄膜配線用Al合金膜およびAl合金スパッタリングターゲット材 |
JPH11293454A (ja) * | 1998-04-14 | 1999-10-26 | Hitachi Metals Ltd | Al系スパッタリング用ターゲット材及びその製造方法 |
US20020014406A1 (en) * | 1998-05-21 | 2002-02-07 | Hiroshi Takashima | Aluminum target material for sputtering and method for producing same |
US20010047838A1 (en) * | 2000-03-28 | 2001-12-06 | Segal Vladimir M. | Methods of forming aluminum-comprising physical vapor deposition targets; sputtered films; and target constructions |
JP4783525B2 (ja) * | 2001-08-31 | 2011-09-28 | 株式会社アルバック | 薄膜アルミニウム合金及び薄膜アルミニウム合金形成用スパッタリングターゲット |
JP4237479B2 (ja) * | 2002-12-25 | 2009-03-11 | 株式会社東芝 | スパッタリングターゲット、Al合金膜および電子部品 |
JP4022891B2 (ja) * | 2003-11-20 | 2007-12-19 | 日立金属株式会社 | 配線膜用Al合金膜および配線膜形成用スパッタリングターゲット材 |
CN101918888B (zh) * | 2008-03-31 | 2013-07-31 | 株式会社神户制钢所 | 显示装置、其制造方法及溅射靶 |
JP5179604B2 (ja) * | 2010-02-16 | 2013-04-10 | 株式会社神戸製鋼所 | 表示装置用Al合金膜 |
JP2012180540A (ja) * | 2011-02-28 | 2012-09-20 | Kobe Steel Ltd | 表示装置および半導体装置用Al合金膜 |
JP5524905B2 (ja) * | 2011-05-17 | 2014-06-18 | 株式会社神戸製鋼所 | パワー半導体素子用Al合金膜 |
US9803283B1 (en) * | 2013-10-18 | 2017-10-31 | Hrl Laboratories, Llc | Method of electroless deposition of aluminum or aluminum alloy, an electroless plating composition, and an article including the same |
US9640556B2 (en) | 2014-01-15 | 2017-05-02 | Kobe Steel, Ltd. | Thin film transistor |
JP6377021B2 (ja) * | 2015-06-05 | 2018-08-22 | 株式会社コベルコ科研 | Al合金スパッタリングターゲット |
US10900102B2 (en) * | 2016-09-30 | 2021-01-26 | Honeywell International Inc. | High strength aluminum alloy backing plate and methods of making |
EP3643801A4 (en) * | 2017-06-21 | 2020-11-11 | Obshchestvo S Ogranichennoy Otvetstvennost'yu "Obedinennaya Kompaniya Rusal Inzhenerno-Tekhnologicheskiy Tsentr" | ALUMINUM BASED ALLOY |
US11935936B2 (en) * | 2018-06-28 | 2024-03-19 | Ulvac, Inc. | Aluminum alloy film, method of producing the same, and thin film transistor |
-
2019
- 2019-03-28 WO PCT/JP2019/013503 patent/WO2020003666A1/ja active Application Filing
- 2019-03-28 CN CN201980036620.1A patent/CN112204165B/zh active Active
- 2019-03-28 JP JP2019547326A patent/JP6735930B2/ja active Active
- 2019-03-28 US US17/052,056 patent/US20210140032A1/en not_active Abandoned
- 2019-03-28 KR KR1020207037291A patent/KR102571458B1/ko active IP Right Grant
- 2019-05-28 TW TW108118305A patent/TWI766163B/zh active
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Publication number | Publication date |
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JPWO2020003666A1 (ja) | 2020-07-09 |
US20210140032A1 (en) | 2021-05-13 |
WO2020003666A1 (ja) | 2020-01-02 |
TWI766163B (zh) | 2022-06-01 |
KR102571458B1 (ko) | 2023-08-25 |
CN112204165A (zh) | 2021-01-08 |
CN112204165B (zh) | 2023-09-01 |
TW202002306A (zh) | 2020-01-01 |
KR20210011455A (ko) | 2021-02-01 |
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