JP6729101B2 - Light emitting device and light emitting device - Google Patents

Description

The present disclosure relates to a light emitting element and a light emitting device.

Conventionally, in the field of light emitting elements used in light emitting devices, various developments have been made in order to make the emission intensity distribution uniform in the light extraction plane. For example, the light emitting element used in the light emitting device described in Patent Document 1 has at least two regions of an edge portion and a region inside the edge portion. The light-emitting element is provided with an anode electrode in each of the edge portion and an area inside the edge portion, and a cathode electrode used in common with the edge portion is provided in the area inside the edge portion. Has been.

International Publication No. 2009/019836

On the other hand, in the light emitting element, the current density is higher in a region where the anode electrode (p-side electrode) and the cathode electrode (n-side electrode) are closer to each other, and the light emission tends to be biased. From the viewpoint of current density, it is considered that there is room for improvement in the emission intensity distribution.

An embodiment of the present disclosure aims to provide a light emitting element and a light emitting device having an improved emission intensity distribution.

In order to solve the above-described problems, a light emitting device according to an embodiment of the present disclosure is a translucent substrate, a first n-type semiconductor layer provided above a part of the translucent substrate, and the first n-type. A first p-type semiconductor layer provided above the semiconductor layer, wherein a first hole is provided in the first p-type semiconductor layer; and the first p-type semiconductor layer. A first p-side electrode provided above, a first n-side electrode provided above a part of the first p-side electrode and in the first hole, and connected to the first n-type semiconductor layer; A second n-type semiconductor layer provided above the optical substrate and around the first semiconductor laminate in plan view, and a second p-type semiconductor layer provided above the second n-type semiconductor layer. A second semiconductor laminated body having a second hole in the second p-type semiconductor layer, a second p-side electrode provided on the second p-type semiconductor layer, and the second p-side electrode. A second n-side electrode which is provided above a part of the above and inside the second hole, and which is connected to the second n-type semiconductor layer.

In order to solve the above-described problems, a light emitting device according to another embodiment of the present disclosure is a translucent substrate, one n-type semiconductor layer provided above the translucent substrate, and the n-type semiconductor layer. A first p-type semiconductor layer provided above a part of the type semiconductor layer and having a first hole, a first p-side electrode provided on the first p-type semiconductor layer, and a part of the first p-side electrode. A first n-side electrode provided above and in the first hole and connected to the n-type semiconductor layer, and provided above the n-type semiconductor layer and around the first p-type semiconductor layer in plan view. A second p-type semiconductor layer having a second hole, a second p-side electrode provided on the second p-type semiconductor layer, and a part of the second p-side electrode and inside the second hole. And a second n-side electrode connected to the n-type semiconductor layer.

In the light emitting device according to the embodiment of the present disclosure, in the light emitting element, an external connection electrode is provided on the side opposite to the translucent substrate, and the external connection electrode is the first n-side electrode and the An n-side external connection electrode connected to the second n-side electrode, a first p-side external connection electrode connected to the first p-side electrode, and a second p-side external connection electrode connected to the second p-side electrode Have.

In a light emitting device according to another embodiment of the present disclosure, in the light emitting element, an external connection electrode is provided on a side opposite to the translucent substrate, and the external connection electrode is the first n-side electrode. A first n-side external connection electrode connected to the second n-side electrode, a second n-side external connection electrode connected to the second n-side electrode, and a p-side external connection electrode connected to the first p-side electrode and the second p-side electrode And.

Furthermore, in a light emitting device according to another embodiment of the present disclosure, in the light emitting element, an external connection electrode is provided on a side opposite to the translucent substrate, and the external connection electrode is the first n-side electrode. A first n-side external connection electrode, a second n-side external connection electrode connected to the second n-side electrode, a first p-side external connection electrode connected to the first p-side electrode, and a second p-side A second p-side external connection electrode connected to the electrode.

According to the light emitting device according to the embodiment of the present disclosure, it is possible to reduce the bias of the current density, and thus it is possible to improve the emission intensity distribution.
According to the light emitting device according to the embodiment of the present disclosure, it is possible to reduce the bias of the current density in the light emitting element, and thus it is possible to improve the emission intensity distribution.

FIG. 3 is an exploded perspective view schematically showing the light emitting element, the light emitting device, and the light source according to the embodiment. It is a top view which shows typically the wavelength conversion member on the light-emitting device which concerns on embodiment. FIG. 3 is a sectional view taken along line III-III in FIG. 2. FIG. 3 is a top view schematically showing the light emitting element and the light emitting device according to the first embodiment. FIG. 3 is a bottom view schematically showing the light emitting element and the light emitting device according to the first embodiment. It is sectional drawing in the VI-VI line of FIG. FIG. 7 is a sectional view taken along line VII-VII of FIG. 5. It is sectional drawing in the VIII-VIII line of FIG. It is explanatory drawing which shows typically the arrangement|positioning area|region of the cover electrode in the light-emitting device which concerns on 1st Embodiment. FIG. 3 is an explanatory view schematically showing an arrangement region of an interlayer insulating film in the light emitting device according to the first embodiment. It is explanatory drawing which shows typically the arrangement|positioning area|region of the n side electrode and the p side electrode in the light-emitting device which concerns on 1st Embodiment. It is explanatory drawing which shows typically the arrangement|positioning area|region of the insulating protective film in the light-emitting device which concerns on 1st Embodiment. It is a bottom view which shows typically the light emitting element and light emitting device which concern on 2nd Embodiment. It is sectional drawing in the XIV-XIV line of FIG. It is a bottom view which shows typically the light emitting element and light emitting device which concern on 3rd Embodiment. It is sectional drawing in the XVI-XVI line of FIG. It is a bottom view which shows the light-emitting device concerning 4th Embodiment typically. It is a bottom view which shows the light-emitting device which concerns on 5th Embodiment typically.

Hereinafter, a light emitting device and a light emitting device according to embodiments of the present invention will be described.
Since the drawings referred to in the following description schematically show the present invention, the scales, intervals, positional relationships, etc. of the respective members are exaggerated, or a part of the members is not shown. There are cases. In addition, the scale, thickness, and interval of each member may not match between the plan view and the cross-sectional view. In addition, in the following description, the same name and reference numeral indicate, in principle, the same or similar members, and detailed description thereof will be appropriately omitted.

(First embodiment)
[Configuration of light emitting device]
First, the configurations of the light emitting element and the light emitting device according to the first embodiment of the present invention will be described with reference to FIGS. The light source 2 shown in FIG. 1 includes a light emitting device 100, a wavelength conversion member 9 provided on the light transmissive substrate 10 side of the light emitting device 100, and a surface opposite to the light transmissive substrate 10 of the wavelength conversion member 9. The provided Fresnel lens 6 is provided. The light source 2 can be incorporated in an external device unit such as a flash module of a camera, in addition to the illumination application. The external device unit may be, for example, a mobile terminal with a camera such as a smartphone.

[Light emitting device]
The light emitting device 100 includes the light emitting element 1 and the external connection electrode 8 and is packaged by covering the periphery with a light reflecting member.
As the light emitting element 1, for example, a semiconductor light emitting element such as a light emitting diode chip can be used. The light emitting element 1 has an upper surface serving as a light emitting surface and an external connection electrode 8 provided on a lower surface opposite to the light emitting surface. The light emitting element 1 includes, for example, a translucent substrate 10 located on the light emitting surface side and a semiconductor laminated body 20 provided on the surface of the translucent substrate 10 opposite to the light emitting surface. The external connection electrode 8 is formed on the surface. In addition, here, the outline of the light emitting element 1 will be described, and the details will be described later.

The semiconductor stacked body 20 includes, for example, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer in this order from the transparent substrate 10 side. The semiconductor layer can be formed from a semiconductor material such as a III-V group compound semiconductor or a II-VI group compound semiconductor. Specifically, a nitride-based semiconductor material such as In _X Al _Y Ga _1-XY N (0≦X, 0≦Y, X+Y≦1) (eg, InN, AlN, GaN, InGaN, AlGaN, InGaAlN) Can be used.

In the semiconductor stacked body 20, the cathode terminal of the external connection electrode 8 is connected to the n-type semiconductor layer, and the anode terminal of the external connection electrode 8 is connected to the p-type semiconductor layer. As shown in FIG. 4, the semiconductor stacked body 20 includes a first semiconductor region 21 and a second semiconductor region 22 provided around the first semiconductor region 21 in plan view.

The first semiconductor region 21 is provided with a first hole 21h (see FIG. 6) penetrating the p-type semiconductor layer to expose the n-type semiconductor layer, and the second semiconductor region 22 is penetrating the p-type semiconductor layer. A second hole 22h (see FIG. 7) that exposes the n-type semiconductor layer is provided. The first hole 21h and the second hole 22h are formed by removing a part of the p-type semiconductor layer, the active layer, and the n-type semiconductor layer from the transparent substrate 10. The p-type semiconductor layer in the first semiconductor region 21 and the p-type semiconductor layer in the second semiconductor region 22 are separated, and the first semiconductor region 21 and the second semiconductor region 22 can emit light independently. it can. In the light emitting element 1, the first semiconductor region 21 functions as a first light emitting unit, and the second semiconductor region 22 functions as a second light emitting unit.

Below, the p-type semiconductor layer in the first semiconductor region 21 is referred to as a first p-type semiconductor layer 21p. Similarly, the p-type semiconductor layer in the second semiconductor region 22 is referred to as a second p-type semiconductor layer 22p. Note that the n-type semiconductor layer is continuously formed in the first semiconductor region 21 and the second semiconductor region 22, and is simply referred to as the n-type semiconductor layer 21n.

The external connection electrode 8 is provided on the side opposite to the translucent substrate 10 with respect to the semiconductor stacked body 20 of the light emitting element 1. The external connection electrode 8 has an n-side external connection electrode 80n, a first p-side external connection electrode 81p, and a second p-side external connection electrode 82p. The n-side external connection electrode 80n is a cathode terminal common to the first semiconductor region 21 and the second semiconductor region 22. By using such a common cathode terminal, it is possible to easily mount the light emitting device 100, and it is possible to secure a wide bonding area with the mounting substrate, so that it is possible to improve heat dissipation. The first p-side external connection electrode 81p is an anode terminal for the first semiconductor region 21. The second p-side external connection electrode 82p is an anode terminal for the second semiconductor region 22.

[Wavelength conversion member 9]
The wavelength conversion member 9 has a lower surface facing the light emitting surface of the light emitting element 1 and is provided so as to cover at least a part of the light emitting surface of the light emitting element 1. The wavelength conversion member 9 is excited by a part of the light emitted from the light emitting element 1 and emits light having a wavelength different from the light emitted from the light emitting element 1. As shown in FIG. 2, the wavelength conversion member 9 is provided so as to cover the entire light emitting surface of the light emitting element 1 and the outer peripheral surface (outer surface) of the wavelength conversion member 9 is located outside the outer surface of the light emitting element 1. .. The wavelength conversion member 9 includes a first phosphor layer 91, a second phosphor layer 92, and a light transmission member 93.

The first phosphor layer 91 is provided so as to cover the first semiconductor region 21 of the light emitting element 1 in a plan view. That is, the first phosphor layer 91 is provided so as to cover the first p-type semiconductor layer 21p of the light emitting element 1 in a plan view. In the first phosphor layer 91, the wavelength of light obtained by converting the light of the light emitting element 1 by the first phosphor layer 91 is smaller than the wavelength of light obtained by converting the light of the light emitting element 1 by the second phosphor layer 92. It has a fluorescent substance that shortens (hereinafter referred to as a first fluorescent substance) and a light transmitting member.

An example of the first phosphor is a phosphor containing a rare earth element described below. Specifically, garnet having at least one element selected from the group of Y, Lu, Sc, La, Gd, Tb and Sm, and at least one element selected from the group of Al, Ga, and In. An example is a (stone garnet) type phosphor. In particular, the aluminum garnet-based phosphor contains Al and at least one element selected from Y, Lu, Sc, La, Gd, Tb, Eu, Ga, In, and Sm, and at least selected from rare earth elements. It is a phosphor activated with one element, and is a phosphor that is excited by visible light or ultraviolet rays emitted from the light emitting element 1 to emit light. For example, in addition to the yttrium-aluminum oxide-based phosphor (YAG-based phosphor), Tb _2.95 Ce _0.05 Al ₅ O ₁₂ , Y _2.90 Ce _0.05 Tb _0.05 Al ₅ O ₁₂ , Y _2.94 Ce _0.05 Pr _0.01 Al ₅ O ₁₂ , _Examples include Y _2.90 Ce _0.05 Pr _0.05 Al ₅ O _{12 and the} like. Of these, particularly in the present embodiment, two or more types of yttrium-aluminum oxide-based phosphors containing Y and activated with Ce or Pr and having different compositions are used.

The second phosphor layer 92 is provided in an annular shape around the first phosphor layer 91 in a plan view, and is provided so as to cover the second semiconductor region 22 of the light emitting element 1. That is, the second phosphor layer 92 is provided so as to cover the second p-type semiconductor layer 22p of the light emitting element 1 in a plan view. The second phosphor layer 92 is a phosphor (hereinafter, referred to as a second phosphor) in which the wavelength of the fluorescence in the second phosphor layer 92 is longer than the wavelength of the fluorescence in the first phosphor layer 91. , And a light transmitting member.

The second phosphor layer 92 preferably contains, for example, a nitride phosphor as the second phosphor. The nitride-based phosphor contains N and contains at least one element selected from Be, Mg, Ca, Sr, Ba, and Zn, and selected from C, Si, Ge, Sn, Ti, Zr, and Hf. And a phosphor activated with at least one element selected from rare earth elements. Examples of the nitride-based phosphor include (Sr _0.97 Eu _0.03 ) ₂ Si ₅ N ₈ , (Ca _0.985 Eu _0.015 ) ₂ Si ₅ N ₈ , and (Sr _0.679 Ca _0.291 Eu _0.03 ) ₂ Si ₅ N ₈ and the like. To be

<Light transmitting member 93>
The light transmitting member 93 is provided between the first phosphor layer 91 and the second phosphor layer 92 and around the second phosphor layer 92. Thereby, each of the lights extracted from the first phosphor layer 91 and the second phosphor layer 92 can be effectively used by the Fresnel lens 6. Examples of the light-transmitting resin forming the light-transmitting member 93 include thermosetting resins such as silicone resin, silicone-modified resin, epoxy resin, and phenol resin, thermoplastic resins such as polycarbonate resin, acrylic resin, methylpentene resin, and polynorbornene resin. A resin can be used. In particular, a silicone resin having excellent light resistance and heat resistance is suitable. Further, instead of using the light transmitting member 93, a light shielding member such as a metal film may be provided, and the light from each phosphor layer 91, 92 can be individually extracted. Furthermore, the first phosphor layer 91 and the second phosphor layer 92, and the second phosphor layer 92 and the light reflecting member 7a described later may be in contact with each other without providing the light transmitting member 93.

A light reflection member 7 a is provided around the wavelength conversion member 9. The light reflection member 7 a is provided so as to cover the outer periphery of the wavelength conversion member 9, and is preferably provided in contact with the wavelength conversion member 9. As a result, leakage of light from the side surface of the wavelength conversion member 9 is suppressed. As a result, it is possible to reduce the output difference of the light extracted from the first phosphor layer 91 and the second phosphor layer 92, and also the wavelength conversion member. 9 can be held. For this reason, the light reflecting member 7a is preferably provided in contact with the entire side surface of the wavelength conversion member 9, whereby the light leakage from the side surface of the wavelength conversion member 9 is effectively suppressed and the wavelength conversion member 9 is provided. Can be securely held.

In the example shown in FIGS. 2 and 3, the light reflecting member 7b is provided so as to cover a part of the side surface and the lower surface of the light emitting element 1 and to expose the surface of the external connection electrode 8. The light reflection member 7b is in contact with the surface of the peripheral portion 301 of the second phosphor layer 92 of the wavelength conversion member 9 on the transparent substrate 10 side. The light reflecting member 7b is provided in contact with the lower surface of the light reflecting member 7a, and protects the light emitting element 1 together with the light reflecting member 7a. Further, at the interface between the light reflection member 7b and the light reflection member 7a, the light emitted from the side surface of the light emitting element 1 can be reflected and extracted through the wavelength conversion member 9, so that the light extraction efficiency can be increased. .. The bottom surface of the light reflection member 7b is formed to be substantially flat, and the surface of the external connection electrode 8 is exposed at the bottom surface. The bottom surface of the light reflecting member 7b is the mounting surface side of the light emitting device 100. A translucent member may be provided so as to extend from the peripheral portion 301 of the second phosphor layer 92 to the side surface of the translucent substrate 10. Thereby, the light emitted from the side surface of the light emitting element 1 can be reflected to the wavelength conversion member 9 side at the interface between the translucent member and the light reflecting member 7b, so that the light extraction efficiency is further improved. You can

<Light reflection members 7a, 7b>
The light reflecting member 7a and the light reflecting member 7b can be made of a light reflecting resin. The light-reflecting resin means a resin having a high reflectance with respect to the light from the light emitting element 1, for example, a reflectance of 70% or more. As the light-reflecting resin, for example, a light-transmitting resin in which a light-reflecting substance is dispersed can be used. As the light reflecting substance, for example, titanium oxide, silicon dioxide, titanium dioxide, zirconium dioxide, potassium titanate, alumina, aluminum nitride, boron nitride, mullite and the like are suitable. The light-reflecting substance may be granular, fibrous, thin plate-like, or the like. Particularly, the fibrous substance reduces the coefficient of thermal expansion of the light-reflecting member 7a and the light-reflecting member 7b. It is preferable because the difference in the coefficient of thermal expansion between and can be reduced. The resin material contained in the reflective resin is particularly preferably a thermosetting translucent resin such as a silicone resin, a silicone-modified resin, an epoxy resin, or a phenol resin.

[Fresnel lens 6]
The Fresnel lens 6 is a thin and lightweight lens having the same refraction characteristics as a convex lens. The Fresnel lens 6 emits a light beam incident from one surface (flat surface) from the other surface (a surface formed in a concentric shape) and focuses the light beam forward. The Fresnel lens 6 is attached so that the center of the lens is substantially aligned with the center of the first phosphor layer 91 of the wavelength conversion member 9 and the center of the first semiconductor region 21 of the light emitting element 1. As shown in FIG. 1, the Fresnel lens 6 is provided so as to cover the entire light emitting surfaces of the first phosphor layer 91 and the second phosphor layer 92 of the wavelength conversion member 9. The outer peripheral edge of the Fresnel lens 6 is arranged so as to be located outside the second phosphor layer 92.

The light source 2 in which the Fresnel lens 6, the light emitting device 100, and the wavelength conversion member 9 are integrated can be incorporated in an external device unit. Alternatively, the Fresnel lens 6 may be provided in advance in the device unit in which the light source 2 is installed, and the light source 2 and the wavelength conversion member 9 may be attached to the device unit to configure the light source 2.

Next, details of the light emitting element 1 will be described with reference to FIGS. 4 to 8.
[Light emitting element 1]
As shown in FIG. 4 to FIG. 8, the light emitting element 1 includes a translucent substrate 10, a first semiconductor region 21, a second semiconductor region 22, a first p-side light reflection layer 31p, and a second p-side light reflection. The layer 32p, the cover electrode 40, the interlayer insulating film 50, the first p-side conductive layer 61p, the first n-side electrode 61n, the second p-side conductive layer 62p, the second n-side electrode 62n, and the insulating protective film 70. , Are provided.
An n-side external connection electrode 80n, a first p-side external connection electrode 81p, and a second p-side external connection electrode 82p (hereinafter, also collectively referred to as external connection electrode 8) are provided on the insulating protective film 70.

As shown in FIGS. 4 to 6 and 11, the light emitting element 1 includes a first n-side electrode 61n in the first semiconductor region 21, and serves as a first p-side electrode provided on the first p-type semiconductor layer 21p. The first p-side light reflection layer 31p is provided.
As shown in FIGS. 4, 5, 7, 8 and 11, the light emitting device 1 includes the second n-side electrode 62n in the second semiconductor region 22 and is provided on the second p-type semiconductor layer 22p. The second p-side electrode is provided with a second p-side light reflection layer 32p.

<Translucent substrate 10>
For the transparent substrate 10, for example, a transparent insulating material such as sapphire (Al ₂ O ₃ ) or a semiconductor material such as gallium nitride (GaN) can be used. The transparent substrate 10 may be thinned by polishing.

<First semiconductor region 21>
As shown in FIG. 6, the first semiconductor region 21 includes an n-type semiconductor layer 21n, a first active layer 21a, and a first p-type semiconductor layer 21p above the transparent substrate 10. Further, each of these semiconductor layers may have a single-layer structure, but may have a laminated structure of layers having different compositions and film thicknesses, a superlattice structure, or the like. In particular, the first active layer 21a preferably has a single quantum well structure or a multiple quantum well structure in which thin films that produce a quantum effect are stacked.

As shown in FIG. 4, since the first p-type semiconductor layer 21p can effectively utilize the Fresnel lens 6, it is preferable that the outer edge of the first p-type semiconductor layer 21p has a circular shape in plan view.
As shown in FIG. 6, the first p-type semiconductor layer 21p is provided above a part of the n-type semiconductor layer 21n, and the first hole 21h is formed. A plurality of first holes 21h are formed in the first p-type semiconductor layer 21p. Since the plurality of first holes 21h are arranged along the outer edge of the first p-type semiconductor layer 21p, the current supplied to the first semiconductor region 21 can be made more uniform. Furthermore, by arranging the plurality of first holes 21h in a circular shape, it is possible to obtain light emission that enables the Fresnel lens 6 to be used more effectively. Further, the plurality of first holes 21h may be arranged at substantially equal intervals.

In the first hole 21h, the first p-type semiconductor layer 21p, the first active layer 21a, and a part of the n-type semiconductor layer 21n are removed from the n-type semiconductor layer 21n. The bottom surface of the first hole 21h is the exposed surface of the n-type semiconductor layer 21n. The side surface of the first hole 21h is covered with the interlayer insulating film 50. A circular n-side opening 51n of the interlayer insulating film 50 is provided on the bottom surface of the first hole 21h. At the n-side opening 51n, the first n-side electrode 61n and the n-type semiconductor layer 21n are in contact with each other and electrically connected. The shape of the first hole 21h may be formed in a circular shape or an elliptical shape in a top view.

The diameter of the first hole 21h can be appropriately set according to the size of the semiconductor stacked body 20. If the diameter of the first hole 21h is reduced, the region where the first active layer 21a and the like are partially removed can be reduced, so that the light emitting region can be increased. If the diameter of the first hole 21h is increased, the contact area between the first n-side electrode 61n and the n-type semiconductor layer 21n can be increased, and thus the increase in forward voltage can be suppressed.

<Second semiconductor region 22>
The second semiconductor region 22 has a configuration similar to that of the first semiconductor region 21, but is arranged at a different location from the first semiconductor region 21. As shown in FIG. 4, in plan view, the area of the first semiconductor region 21 and the area of the second semiconductor region 22 are preferably equal from the viewpoint of current density. As shown in FIGS. 7 and 8, the second semiconductor region 22 includes an n-type semiconductor layer 21n, a second active layer 22a, and a second p-type semiconductor layer 22p above the transparent substrate 10. ing.

As shown in FIG. 4, the second p-type semiconductor layer 22p has a circular outer edge in plan view. Here, the second p-type semiconductor layer 22p has a circular inner edge in plan view, and has an annular shape that allows the Fresnel lens 6 to be used more effectively.
As shown in FIGS. 7 and 8, the second p-type semiconductor layer 22p is provided above a part of the n-type semiconductor layer 21n, and the second hole 22h is formed. A plurality of second holes 22h are formed in the second p-type semiconductor layer 22p. The plurality of second holes 22h are arranged along the inner edge of the second p-type semiconductor layer 22p. Therefore, the current supplied to the second semiconductor region 22 can be made more uniform. Furthermore, since the plurality of second holes 22h are arranged adjacent to the first semiconductor region 21, they can also contribute to current diffusion in the first semiconductor region 21. Further, the plurality of second holes 22h may be arranged at substantially equal intervals. Further, it is preferable that the plurality of arranged second holes 22h are arranged closer to the inner edge portion than the outer edge portion of the second p-type semiconductor layer 22p. As a result, the total length of the second n-side electrode 62n that integrally connects the plurality of second holes 22h can be minimized, so that an increase in the forward voltage due to the wiring resistance can be suppressed.

In the second hole 22h, the second p-type semiconductor layer 22p, the second active layer 22a, and a part of the n-type semiconductor layer 21n are removed from the n-type semiconductor layer 21n. The bottom surface of the second hole 22h is the exposed surface of the n-type semiconductor layer 21n. The side surface of the second hole 22h is covered with the interlayer insulating film 50. A circular n-side opening 52n of the interlayer insulating film 50 is provided on the bottom surface of the second hole 22h. The second n-side electrode 62n and the n-type semiconductor layer 21n are in contact with each other and electrically connected to each other through the n-side opening 52n. The shape of the second hole 22h may be formed in a circular shape or an elliptical shape in a top view. The diameter of the second hole 22h can be appropriately set according to the size of the semiconductor stacked body 20.

As shown in FIG. 7, the boundary between the outer edge portion 22s of the n-type semiconductor layer 21n and the second p-type semiconductor layer 22p is covered with the second n-side electrode 62n and the interlayer insulating film 50, and the cover electrode 40 is covered. Not not.

<First p-side light reflection layer 31p>
As shown in FIG. 6, the first p-side light reflection layer 31p is connected to substantially the entire upper surface of the first p-type semiconductor layer 21p. The first p-side light reflection layer 31p has an opening concentric with the first hole 21h at a position corresponding to the first hole 21h of the n-type semiconductor layer 21n (see FIG. 9). Here, the substantially entire surface refers to a region other than the outer edge on the upper surface of the first p-type semiconductor layer 21p and the inner edge near the first hole 21h. For example, the first p-side light reflection layer 31p is preferably provided on 90% or more of the upper surface of the first p-type semiconductor layer 21p.
The first p-side light reflection layer 31p is a layer for uniformly diffusing a current supplied via the first p-side conductive layer 61p over the entire surface of the first p-type semiconductor layer 21p. The first p-side light reflection layer 31p has good light reflectivity and also functions as a layer that reflects the light emitted from the light emitting element 1 downward in the light extraction surface.

<Second p-side light reflection layer 32p>
The second p-side light reflection layer 32p has the same configuration as the first p-side light reflection layer 31p, but is arranged at a different location from the first p-side light reflection layer 31p.
The second p-side light reflection layer 32p is connected to substantially the entire upper surface of the second p-type semiconductor layer 22p, as shown in FIGS. 7 and 8. The second p-side light reflection layer 32p has an opening concentric with the second hole 22h at a position corresponding to the second hole 22h of the n-type semiconductor layer 21n (see FIG. 9).

For the first p-side light reflection layer 31p and the second p-side light reflection layer 32p, a metal material having good conductivity and light reflectivity can be used. Particularly, as a metal material having good reflectivity in the visible light region, Ag, Al, Pt, Rh, Ir or an alloy containing these metals as main components can be preferably used. The first p-side light reflection layer 31p and the second p-side light reflection layer 32p may be a single layer or a stacked layer of these metal materials.

<Cover electrode 40>
As shown in FIG. 9, the cover electrode 40 is provided so as to cover the first p-side light reflection layer 31p and the second p-side light reflection layer 32p. Specifically, as shown in FIG. 6, the cover electrode 40 is provided so as to cover a part of the upper surface and the side surface of the first p-side light reflection layer 31p (first p-side electrode). Further, as shown in FIGS. 7 and 8, the cover electrode 40 is provided so as to cover a part of the upper surface and the side surface of the second p-side light reflection layer 32p. The cover electrode 40 is a barrier layer for preventing migration of the metal material forming the first p-side light reflection layer 31p and the second p-side light reflection layer 32p. As the cover electrode 40, a metal oxide or metal nitride having a barrier property can be used. For example, at least one oxide or nitride selected from the group consisting of Si, Ti, Zr, Nb, Ta, and Al. A thing can be used. Further, as the cover electrode 40, a single layer or a stacked layer of these metal materials can be used.

<Interlayer insulating film 50>
The interlayer insulating film 50 is provided above the semiconductor stacked body 20 and includes a first n-side electrode 61n and a second n-side electrode 62n electrically connected to the n-type semiconductor layer 21n, and the p-type semiconductor layers 21p and 22p, respectively. Is an insulating film for extending above. Therefore, as shown in FIG. 10, the interlayer insulating film 50 is provided above almost the entire surface of the semiconductor stacked body 20. Among them, above the first semiconductor region 21, the interlayer insulating film 50 is provided on the upper surface and the side surface of the cover electrode 40 and the side surface of the n-type semiconductor layer 21n as shown in FIG. In the first semiconductor region 21, the interlayer insulating film 50 has a p-side opening 51p and an n-side opening 51n on the bottom surface of the first hole 21h on the n-type semiconductor layer 21n. As shown in FIG. 10, the n-side opening 51n is formed, for example, in a circular shape. Further, the p-side opening 51p is provided in a region where the first p-side conductive layer 61p is arranged.

On the other hand, above the second semiconductor region 22, the interlayer insulating film 50 is provided on the upper surface and the side surface of the cover electrode 40 and the side surface of the n-type semiconductor layer 21n, as shown in FIGS. .. In the second semiconductor region 22, the interlayer insulating film 50 has the p-side opening 52p and the n-side opening 52n at the bottom surface of the second hole 22h on the n-type semiconductor layer 21n. Here, the n-side opening 52n is formed, for example, in a circular shape. The p-side opening 52p is provided, for example, in a rectangular shape. The p-side opening 52p is provided in a region where the second p-side conductive layer 62p is arranged. Here, a plurality of p-side openings 52p are provided.

As the interlayer insulating film 50, a metal oxide or a metal nitride can be used. For example, at least one oxide or nitride selected from the group consisting of Si, Ti, Zr, Nb, Ta, and Al is preferable. Can be used for. Further, as the interlayer insulating film 50, a DBR (Distributed Bragg Reflector) film may be configured by laminating two or more kinds of translucent dielectrics having different refractive indexes.

<First n-side electrode 61n>
The first n-side electrode 61n is an n-side pad electrode in the first semiconductor region 21 of the light emitting element 1. As shown in FIG. 6, the first n-side electrode 61n is provided on a partial region of the interlayer insulating film 50 and extends to each of the first holes 21h. The first n-side electrode 61n is connected to the n-type semiconductor layer 21n via each first hole 21h. As shown in FIG. 11, the first n-side electrode 61n extends along the plurality of first holes 21h arranged in the first semiconductor region 21 and integrally connects the plurality of first holes 21h. ..
The first n-side electrode 61n is electrically connected to the n-type semiconductor layer 21n through each n-side opening 51n of the interlayer insulating film 50 in each first hole 21h. As described above, the first n-side electrode 61n is connected to the n-type semiconductor layer 21n at a wide range of location within the surface of the first semiconductor region 21, so that the current supplied via the first n-side electrode 61n is Since it can be uniformly diffused into the n-type semiconductor layer 21n of the first semiconductor region 21, the light emission efficiency can be improved.

<First p-side conductive layer 61p>
The first p-side conductive layer 61p is a p-side pad electrode in the first semiconductor region 21 of the light emitting element 1. As shown in FIG. 6, the first p-side conductive layer 61 p is provided on a partial region of the interlayer insulating film 50 and is formed so as to extend into the opening of the cover electrode 40.
The first p-side conductive layer 61p is provided on the first p-side light reflection layer 31p, electrically connected to the first p-side light reflection layer 31p through the opening of the cover electrode 40, and through the first p-side light reflection layer 31p. It is electrically connected to the first p-type semiconductor layer 21p. In this way, the first p-side conductive layer 61p can be regarded as forming the first p-side electrode together with the first p-side light reflection layer 31p.
The first p-side conductive layer 61p is electrically connected to the first p-side external connection electrode 81p through the seed layer 85 through the p-side opening 71p of the insulating protective film 70.

<Second n-side electrode 62n>
The second n-side electrode 62n is an n-side pad electrode in the second semiconductor region 22 of the light emitting element 1. As shown in FIG. 7, the second n-side electrode 62n is provided on a partial region of the interlayer insulating film 50 and extends to each second hole 22h. The second n-side electrode 62n is connected to the n-type semiconductor layer 21n via each second hole 22h. As shown in FIG. 11, the second n-side electrode 62n extends along the plurality of second holes 22h arranged in the second semiconductor region 22, and integrally connects the plurality of second holes 22h. ..
The second n-side electrode 62n is electrically connected to the n-type semiconductor layer 21n through each n-side opening 52n of the interlayer insulating film 50 in each second hole 22h. In this manner, the second n-side electrode 62n is connected to the n-type semiconductor layer 21n at a wide range of the surface of the second semiconductor region 22, so that the current supplied via the second n-side electrode 62n is Since it can be uniformly diffused into the n-type semiconductor layer 21n of the second semiconductor region 22, the luminous efficiency can be improved.

<Second p-side conductive layer 62p>
The second p-side conductive layer 62p is a p-side pad electrode in the second semiconductor region 22 of the light emitting element 1. As shown in FIG. 8, the second p-side conductive layer 62p is provided on a partial region of the interlayer insulating film 50 and is formed so as to extend to the p-side opening 52p of the interlayer insulating film 50. There is. The second p-side conductive layer 62p is electrically connected to the second p-side light reflection layer 32p through the p-side opening 52p, and is electrically connected to the second p-type semiconductor layer 22p through the second p-side light reflection layer 32p. .. As described above, the second p-side conductive layer 62p can be regarded as forming the second p-side electrode together with the second p-side light reflection layer 32p. Further, the second p-side conductive layer 62p is electrically connected to the second p-side external connection electrode 82p through the seed layer 85 through the p-side opening 72p of the insulating protective film 70.

A metal material can be used for the pad electrodes (the first n-side electrode 61n, the second n-side electrode 62n, the first p-side conductive layer 61p, and the second p-side conductive layer 62p). For example, Ag, Al, Ni, Rh, A simple metal such as Au, Cu, Ti, Pt, Pd, Mo, Cr, W or an alloy containing these metals as a main component can be preferably used. More preferably, a simple metal such as Ag, Al, Pt, or Rh having excellent light reflectivity or an alloy containing these metals as a main component can be used. When an alloy is used, it may contain a non-metal element such as Si as a composition element, such as an AlSiCu alloy. Further, for each conductive layer, a single layer or a stacked layer of these metal materials can be used.

<Insulating protective film 70>
The insulating protective film 70 is an insulating film that is provided above the semiconductor stacked body 20 and protects the light emitting element 1 from a short circuit between the pad electrodes. As shown in FIG. 12, the insulating protective film 70 has an n-side opening 71n at a position avoiding the first hole 21h above the region where the external connection electrode 8 is arranged and above the first semiconductor region 21, and the interlayer insulating film 70 is formed. The p-side opening 71p is provided so as to overlap a part of the p-side opening 51p of the film 50.
As shown in FIG. 12, the insulating protective film 70 has an n-side opening 72n at a position including the second hole 22h above the region where the external connection electrode 8 is arranged and above the second semiconductor region 22, and the interlayer insulating film 70. A p-side opening 72p is provided so as to include 50 p-side openings 52p.
As the insulating protective film 70, similarly to the interlayer insulating film 50, metal oxide or metal nitride can be used.

[External connection electrode 8]
As shown in FIG. 5, the n-side external connection electrode 80n is provided on one side (left side in FIG. 5) of the rectangular light emitting element 1 in plan view. Further, the first p-side external connection electrode 81p is provided on the other side (upper right in FIG. 5) opposite to the one side. Further, the second p-side external connection electrode 82p is also provided on the other side (lower right in FIG. 5).

On the surface of the light emitting element 1, the first p-side external connection electrode 81p is provided apart from the n-side external connection electrode 80n by a predetermined distance. Similarly, the second p-side external connection electrode 82p is connected to the n-side external connection electrode. It is provided at a predetermined distance from the electrode 80n.

Here, in plan view, the shape of the n-side external connection electrode 80n is substantially rectangular, and the shapes of the first p-side external connection electrode 81p and the second p-side external connection electrode 82p are substantially square. The size of the p-side electrode is smaller than half the size of the n-side electrode.
Further, on the surface of the light emitting element 1, the first p-side external connection electrode 81p and the second p-side external connection electrode 82p are arranged symmetrically with respect to the n-side external connection electrode 80n.
Furthermore, on the surface of the light emitting element 1, the first p-side external connection electrode 81p and the second p-side external connection electrode 82p are arranged symmetrically.

Thus, the external connection electrode 8 is freely arranged at a desired position independently of the arrangement of the first semiconductor region 21 and the second semiconductor region 22 of the light emitting element 1 and the arrangement of the pad electrode. However, the n-side external connection electrode 80n is connected to the first n-side electrode 61n and the second n-side electrode 62n. The first p-side external connection electrode 81p is connected to the first p-side conductive layer 61p. Further, the second p-side external connection electrode 82p is connected to the second p-side conductive layer 62p.
As a material of the external connection electrode 8, a metal such as Cu, Au, or Ni can be preferably used. The external connection electrode 8 can be formed by an electrolytic plating method.

At the time of mounting, an adhesive member is provided between the external connection electrode 8 and the external wiring pattern, and after the adhesive member is melted and cooled, the external connection electrode 8 and the external wiring pattern are firmly joined. It Here, solder such as Sn-Au, Sn-Cu, or Sn-Ag-Cu can be used as the adhesive member. In that case, it is preferable that the uppermost layer of the external connection electrode 8 be made of a material that has good adhesion to the adhesive member used.

[Operation of light emitting device]
Next, the operation of the light emitting device 100 will be described with reference to FIGS.
When an external power source is connected to the first p-side external connection electrode 81p and the n-side external connection electrode 80n via the mounting substrate, the light emitting device 100 has the first p-side electrode (the first p-side light reflection layer 31p) of the light emitting element 1. ) And the first n-side electrode 61n. As a result, the first active layer 21a of the light emitting element 1 emits light. This light propagates in the first semiconductor region 21 of the semiconductor stacked body 20, is emitted from the upper surface or side surface (see FIG. 3) of the light emitting element 1, and is extracted to the outside. The light propagating downward in the light emitting element 1 is reflected by the first p-side light reflection layer 31p, emitted from the upper surface of the light emitting element 1, and extracted to the outside.

In the light emitting device 100, when the external power source is connected to the second p-side external connection electrode 82p and the n-side external connection electrode 80n via the mounting substrate, the second p-side electrode of the light emitting element 1 (the second p-side light reflection layer 32p). ) And the second n-side electrode 62n. As a result, the second active layer 22a of the light emitting element 1 emits light. This light propagates in the second semiconductor region 22 of the semiconductor stacked body 20, is emitted from the upper surface or the side surface of the light emitting element 1 (see FIG. 3), and is extracted to the outside. The light propagating downward in the light emitting element 1 is reflected by the second p-side light reflection layer 32p, emitted from the upper surface of the light emitting element 1, and taken out to the outside.

When a blue light emitting diode is used in the light emitting device 100 and the first phosphor layer 91 of the wavelength conversion member 9 contains a YAG-based phosphor, the light from the first semiconductor region 21 of the light emitting element 1 is the first phosphor layer 91. Is converted into white light through. When the second phosphor layer 92 of the wavelength conversion member 9 contains a nitride-based phosphor, the light from the second semiconductor region 22 of the light emitting element 1 is converted into reddish light through the second phosphor layer 92. ..

Therefore, in the light source 2, when only the first semiconductor region 21 of the light emitting element 1 is caused to emit light, white light is emitted from the wavelength conversion member 9, and when only the second semiconductor region 22 is caused to emit light, the wavelength conversion member 9 is emitted. Emits reddish light. Then, the Fresnel lens 6 collects the incident light.
Further, in the light source 2, when the first semiconductor region 21 and the second semiconductor region 22 of the light emitting element 1 are caused to emit light at the same time, both the white light and the reddish light are emitted from the wavelength conversion member 9, and the Fresnel lens 6 collects these incident lights. As a result, the light source 2 can emit more natural light that is dimmed by different phosphors and has excellent color rendering properties.

Further, in the light source 2, as shown in FIG. 1, one Fresnel lens 6 covers the entire light emitting surface of the first phosphor layer 91 and the second phosphor layer 92 formed on the concentric circles of the wavelength conversion member 9. It is provided to cover. Therefore, the light source 2 can be made smaller and more aesthetic than, for example, a conventional light source in which two condenser lenses are provided for each phosphor layer and arranged side by side.

[Method of manufacturing light emitting device]
An outline of a method of manufacturing the light emitting device 100 will be described with reference to FIGS. 3 to 8 (see FIGS. 9 to 12 as appropriate). First, an n-type semiconductor layer, an active layer, and a p-type semiconductor layer are sequentially laminated on the upper surface of the light-transmissive substrate 10 made of sapphire or the like to form the semiconductor laminate 20 (step 101). ).
Then, a light reflection layer is formed on the entire surface of the semiconductor stacked body 20 by the lift-off method (step 102). That is, after forming a resist pattern having an opening in a region where the first p-side light reflection layer 31p and the second p-side light reflection layer 32p are arranged by a photolithography method, Ag or the like is formed on the entire surface of the wafer by a sputtering method or an evaporation method. The above-mentioned metal film having good reflectivity is formed. Then, by removing the resist pattern, the metal film is patterned to form the first p-side light reflection layer 31p and the second p-side light reflection layer 32p having openings.

Next, the cover electrode 40 is formed so as to cover the upper surface and the side surface of the first p-side light reflection layer 31p and the second p-side light reflection layer 32p (step 103). For the cover electrode 40, for example, SiN is used to form a SiN film on the entire surface of the wafer by a sputtering method, an evaporation method, or the like, and then a resist pattern having an opening other than a region where the cover electrode 40 is arranged is formed by a photolithography method. To do. Then, the SiN film is patterned by etching using the resist pattern as a mask, and then the resist pattern is removed to form the cover electrode 40 having an opening.
Then, the p-type semiconductor layer, the active layer, and the n-type semiconductor layer are partially removed by dry etching in a partial region of the semiconductor stacked body 20 to expose the n-type semiconductor layer 21n. The two holes 22h and the outer edge portion 22s are formed (step 104: see FIG. 9).

Next, the interlayer insulating film 50 is formed using a predetermined insulating material (step 105: see FIG. 10).
Here, above the first semiconductor region 21, when forming the interlayer insulating film 50 having the p-side opening 51, an opening is formed in the cover electrode 40 disposed below the region where the p-side opening 51p is formed. .. Therefore, the p-side opening 51p and the opening of the cover electrode 40 have substantially the same size.
Further, above the second semiconductor region 22, when forming the interlayer insulating film 50 having the p-side opening 52, an opening is formed in the cover electrode 40 arranged below the region where the p-side opening 52p is formed. Therefore, the p-side opening 52p and the opening of the cover electrode 40 have substantially the same size.
The interlayer insulating film 50 can be patterned by forming an insulating film on the entire surface of the wafer by a sputtering method or the like, forming a resist pattern having an opening in the above-described predetermined region, and etching the insulating film.

Subsequently, as shown in FIG. 11, a first n-side electrode 61n and a first p-side conductive layer 61p are formed as pad electrodes above the first semiconductor region 21 from above the interlayer insulating film 50 by, for example, a sputtering method or the like. At the same time, the second n-side electrode 62n and the second p-side conductive layer 62p are formed as pad electrodes above the second semiconductor region 22 (step 106). These pad electrodes can be patterned by a lift-off method, for example. As a result, the light emitting device 1 is manufactured at the wafer level. Here, subsequently, the insulating protective film 70 is formed on the pad electrode by using a predetermined insulating material (step 107: see FIG. 12 ). The insulating protective film 70 can be formed in the same manner as the interlayer insulating film 50. The insulating protective film 70 is not essential for the light emitting element 1, but is preferably provided.

Next, each pad electrode is covered with a mask having an opening on a region where the external connection electrode 8 is arranged (step 108). This mask is an insulating mask for preventing plating growth on the region where the external connection electrode 8 is not arranged in the subsequent step. The mask is formed using an insulating material such as photoresist or SiO ₂ .

Next, a seed layer 85 (see FIG. 5) that becomes a current path for electrolytic plating is formed in the opening of the mask (step 108), and the external connection electrode 8 is formed by plating growth on the seed layer 85 by electrolytic plating. Are formed (step 109).
Then, the mask is removed using an appropriate solvent or chemical (step 110). Note that the mask can be removed by dry etching.
Finally, the light emitting device 100 is separated into individual pieces by cutting the wafer along the boundary line by a dicing method or a scribing method (step 111).

Next, an outline of a method of manufacturing a light emitting device including the wavelength conversion member 9 as shown in FIGS. 2 and 3 will be described.
First, a plate-shaped reflecting member is prepared (step 201). This reflecting member is formed by curing a resin containing a light reflecting substance, and has a size corresponding to a plurality of light emitting devices after being divided into individual pieces.
Then, the prepared reflection member is provided with openings (for example, through holes) each having a shape corresponding to the outer peripheral edge of the wavelength conversion member 9 (step 202). As a result, a reflection member frame having a structure in which the light reflection members 7a of the respective wavelength conversion members 9 are connected is formed. Here, examples of the method of forming the openings include laser light irradiation, punching, etching, and blasting.
Next, a translucent resin that constitutes the light transmissive member 93 of the wavelength conversion member 9 is filled in each opening in the reflective member frame by, for example, potting, and cured to form a plurality of translucent members ( Step 203).

Subsequently, in each translucent member cured in the reflecting member frame, a first opening having a shape corresponding to the first phosphor layer 91 of the wavelength conversion member 9 is formed and the second phosphor layer 92 is formed. A second opening having a corresponding shape is formed (step 204).
Then, in the reflecting member frame, for example, by potting, the resin containing the first phosphor is filled in each first opening, and the resin containing the second phosphor is filled in each second opening (step 205).
Then, the first phosphor and the second phosphor are allowed to settle by, for example, centrifugation (step 206).
Further, the resin is cured in a state where the first phosphor and the second phosphor are settled to form a composite sheet including the reflection member frame and each wavelength conversion member 9 (step 207).

Then, each light emitting device 100 is adhered to the composite sheet (step 208). Specifically, the translucent substrate 10 of each light emitting element 1 is adhered to the composite sheet with a die bond resin made of a translucent resin, for example. At this time, the light emitting element 1 is preferably bonded to the lower surface of the wavelength conversion member 9 so that light can be effectively extracted through the wavelength conversion member 9.
Then, each light-emitting device 100 joined to this composite sheet is covered with a resin containing a light-reflecting substance up to each external connection electrode 8 and cured to form a reflective member on the composite sheet (step 209). ).

Next, the external connection electrode 8 of each light emitting element 1 is exposed by grinding from the upper surface of the reflecting member formed so as to cover each light emitting device 100 (step 210).
Then, the composite sheet and the reflecting member on it are cut along the dividing line of the reflecting member frame by a method such as dicing to separate each light emitting device (step 211).
Through the above steps, a light emitting device having a structure in which the light reflecting member 7a is formed around the wavelength conversion member 9 and the light reflecting member 7b is formed around the light emitting device 100 is manufactured.

In the light emitting device 100, the external connection electrode 8 is connected to the n-side external connection electrode 80n connected to the first n-side electrode 61n and the second n-side electrode 62n, and the first p-side electrode (first p-side light reflection layer 31p). The first p-side external connection electrode 81p and the second p-side external connection electrode 82p connected to the second p-side electrode (the second p-side light reflection layer 32p) are provided.
Further, in the light emitting device 100, the first semiconductor region 21 functioning as the first light emitting portion is formed in the central region of the light emitting element 1 in a plan view, and in the first semiconductor region 21, the n-side pad electrode is formed. And a first p-side conductive layer 61, which is a p-side pad electrode, are provided.
Further, in the light emitting device 100, the second semiconductor region 22 that functions as the second light emitting unit is formed around the first semiconductor region 21 in a plan view, and the second semiconductor region 22 has an n-side pad. A second n-side electrode 62n, which is an electrode, and a second p-side conductive layer 62, which is a p-side pad electrode, are provided. Therefore, the light emitting device 100 includes an n-side pad electrode and a p-side pad electrode for each light emitting unit.

Thus, the light emitting device 100 includes the first semiconductor region 21 (first light emitting portion) in which the first p-type semiconductor layer 21p is stacked above the n-type semiconductor layer 21n, and the n-type semiconductor layer 21n provided around the first semiconductor region 21. Since the external connection electrode 8 can supply a current to each of the second semiconductor region 22 (second light emitting portion) in which the second p-type semiconductor layer 22p is stacked above the first light emitting portion and the second light emitting portion The light emitting unit can be controlled independently.

On the other hand, as in the prior art described in Patent Document 1, only one n-side electrode (cathode electrode) is connected to the first light emitting portion (edge portion) or the second light emitting portion (region inside the edge portion). In such a case, the current is biased to the light emitting portion to which the n-side electrode is connected, and the current density distribution tends to increase in the plane of each light emitting portion as it gets closer to the n-side electrode.
On the other hand, in the light emitting device 100 according to the present embodiment, different n-side electrodes (first n-side electrodes) are provided in the first semiconductor region 21 (first light emitting portion) and the second semiconductor region 22 (second light emitting portion). 61n and the second n-side electrode 62n) are connected to each other.
Accordingly, in the light emitting element 1 according to the present embodiment, the current path from the first n-side electrode 61n to the first p-side electrode (first p-side light reflection layer 31p) in the first semiconductor region 21 and the second semiconductor region 22 in the second semiconductor region 22. The current path from the second n-side electrode 62n to the second p-side electrode (second p-side light reflection layer 32p) can be aligned. Therefore, the light emitting element 1 can reduce the bias of the current more than the conventional light emitting element. Therefore, as a result of reducing the bias of the current density in the light emitting element 1, the light emitting device 100 using the light emitting element 1 can improve the light emission intensity distribution.

(Second embodiment)
As shown in FIGS. 13 and 14, in the light emitting device 1B and the light emitting device 100B according to the second embodiment, the openings of the interlayer insulating film 50 are different from those of the light emitting device 1 and the light emitting device 100 according to the first embodiment. .. Below, the same components as those of the light emitting device 100 are designated by the same reference numerals, and the description thereof will be omitted.
The light emitting device 100B includes a light emitting element 1B and an external connection electrode 8 (n-side external connection electrode 80n, first p-side external connection electrode 81p, second p-side external connection electrode 82p).

In the light emitting element 1B, the interlayer insulating film 50 includes the n-side opening 53n on the outer peripheral side (left side in FIG. 14) of the second semiconductor region 22. Here, the outer edge portion 22s of the n-type semiconductor layer 21n is outside the second p-type semiconductor layer 22p in plan view. As shown in FIG. 14, the second n-side electrode 62n extends from above the outer edge portion of the second p-type semiconductor layer 22p so as to cover the outer edge portion 22s of the n-type semiconductor layer 21n. The second n-side electrode 62n is connected to the outer edge portion 22s of the n-type semiconductor layer 21n and can reflect the light extracted from the side surface of the second p-type semiconductor layer 22p to the light extraction surface side. As shown in FIG. 13, a part of the second n-side electrode 62n is arranged along the second p-type semiconductor layer 22p in a plan view.

In the light emitting device 1B according to the second embodiment, the second n-side electrode 62n is arranged so as to contact the n-type semiconductor layer 21n in the second hole 22h, and the semiconductor is formed through the n-side opening 53n of the interlayer insulating film 50. It is arranged so as to also contact the outer edge portion 22s of the laminated body 20.
Since the second n-side electrode 62n is in contact with the n-type semiconductor layer 21n at the outer edge portion 22s of the semiconductor stacked body 20 in the light emitting element 1B, the light emitting device 100B using the light emitting element 1B has the forward voltage It is possible to suppress the rise of the light emission and improve the light emission output.

(Third Embodiment)
As shown in FIGS. 15 and 16, the light emitting element 1C and the light emitting device 100C according to the third embodiment are different from the light emitting element 1 and the light emitting device 100 according to the first embodiment in that two semiconductor stacked bodies are provided. ing. Below, the same components as those of the light emitting device 100 are designated by the same reference numerals, and the description thereof will be omitted.
The light emitting device 100C includes a light emitting element 1C and an external connection electrode 8 (n-side external connection electrode 80n, first p-side external connection electrode 81p, second p-side external connection electrode 82p).

In the first embodiment, the n-type semiconductor layer is formed continuously in the first semiconductor region 21 and the second semiconductor region 22, but in the third embodiment, the n-type semiconductor layer is formed continuously. The n-type semiconductor layer is separated from the two semiconductor regions 22. Therefore, the first semiconductor region 21 is also referred to as the first semiconductor stacked body 21. The second semiconductor region 22 is also referred to as a second semiconductor stacked body 22C.

As shown on the right side in FIG. 16, the first semiconductor stacked body 21 includes a first n-type semiconductor layer 21n, a first active layer 21a, and a first p-type semiconductor layer 21p above the transparent substrate 10. I have it.
As shown on the left side in FIG. 16, the second semiconductor stacked body 22C includes a second n-type semiconductor layer 22n, a second active layer 22a, and a second p-type semiconductor layer 22p above the transparent substrate 10. I have it.
As shown in FIG. 16, the light emitting element 1C is provided on the transparent substrate 10 between the first semiconductor stacked body 21 (first light emitting portion) and the second semiconductor stacked body 22C (second light emitting portion). Then, the p-type semiconductor layer, the active layer, and the n-type semiconductor layer are removed, and the interlayer insulating film 50 and the like are laminated on the translucent substrate 10 without interposing the semiconductor layer.

As a result, the light emitting device 100C includes the first semiconductor stacked body 21 (first light emitting portion) above the first n type semiconductor layer 21n, in which the first p type semiconductor layer 21p is stacked, and the periphery of the first light emitting portion. And a second semiconductor stacked body 22C (second light emitting portion) which is provided above the second n-type semiconductor layer 22n and has the second p-type semiconductor layer 22p stacked thereon, and supplies a current to each of them with the external connection electrode 8. Therefore, the first light emitting unit and the second light emitting unit can be independently controlled.
Further, in the light emitting device 100C, the first semiconductor stacked body 21 and the second semiconductor stacked body 22C are provided separately on the translucent substrate 10, so that the n-type semiconductor layers 21n and 22n are laterally traversed. The light propagating in the direction can be reflected by the separation end faces 21e and 22e (see FIG. 16). Accordingly, when the first phosphor layer 91 and the second phosphor layer 92 are provided on the light extraction surface side (lower side in FIG. 16) of the light emitting element 1C, the first phosphor layer 91 and the second phosphor layer are provided. 92 and 92 can be made to emit light more selectively.

(Fourth Embodiment)
As shown in FIG. 17, in the light emitting device 100D according to the fourth embodiment, the structure of the external connection electrode 8 is different from that of the light emitting device 100 according to the first embodiment. Below, the same components as those of the light emitting device 100 are designated by the same reference numerals, and the description thereof will be omitted.
The light emitting device 100D includes a light emitting element 1D, and as the external connection electrodes 8 provided on the light emitting element 1D, a 1n-side external connection electrode 81n, a 2n-side external connection electrode 82n, and a p-side external connection electrode 80p, Equipped with.

The light emitting element 1D includes the same components as the light emitting element 1, but the positions of the through holes of the p-type semiconductor layer, the positions of the through holes of the insulating film, and the like may be different. For example, the p-side opening 71p and the n-side opening 71n in the insulating protective film 70 are different in shape, size, and arrangement from those of the light emitting element 1 according to the first embodiment. In particular, the n-side opening 71n of the insulating protective film 70 is provided in a region where the first n-side external connection electrode 81n is arranged and above the first semiconductor region 21 at a position avoiding the first hole 21h. The shape, size, and arrangement of the n-side opening 71n and the like are not limited to those shown in FIG. Even with such a configuration of the light emitting element 1D, it is possible to reduce the bias of the current as compared with the conventional light emitting element.

The arrangement of the external connection electrodes 8 of the light emitting device 100D is the same as the arrangement when the external connection electrodes 8 of the light emitting device 100 are rotated 180 degrees in a plan view. That is, as shown in FIG. 17, the first n-side external connection electrode 81n is provided on the side of one side (lower left in FIG. 17) of the light emitting element 1 that is rectangular in plan view. The second n-side external connection electrode 82n is also provided on one side (upper left in FIG. 17). On the other hand, the p-side external connection electrode 80p is provided on the other side (right side in FIG. 17) opposite to the one side.

The first n-side external connection electrode 81n is connected to the first n-side electrode 61n through the n-side opening 71n of the insulating protective film 70.
The second n-side external connection electrode 82n is connected to the second n-side electrode 62n through the n-side opening 72n of the insulating protective film 70.
Even in such a light emitting device 100D, the light emission intensity distribution can be improved by using the light emitting element 1D.

(Fifth Embodiment)
As shown in FIG. 18, the light emitting device 100E according to the fifth embodiment is different from the light emitting device 100D according to the fourth embodiment in the structure of the external connection electrode 8. Below, the same components as those of the light emitting device 100D are denoted by the same reference numerals, and description thereof is omitted.
The light emitting device 100E includes a light emitting element 1E, and as the external connection electrodes 8 provided on the light emitting element 1E, a first n-side external connection electrode 81n, a second n-side external connection electrode 82n, and a first p-side external connection electrode 81p. , And the second p-side external connection electrode 82p.
The light emitting element 1E is the same as the light emitting element 1D shown in FIG.

The first p-side external connection electrode 81p is connected to the first p-side conductive layer 61p through the p-side opening 71p of the insulating protective film 70. That is, the first p-side external connection electrode 81p is connected to the first p-side electrode (first p-side light reflection layer 31p) via the first p-side conductive layer 61p.
The second p-side external connection electrode 82p is connected to the second p-side conductive layer 62p through the p-side opening 72p of the insulating protective film 70. That is, the second p-side external connection electrode 82p is connected to the second p-side electrode (second p-side light reflection layer 32p) via the second p-side conductive layer 62p.
Even in such a four-terminal light emitting device 100E, the light emission intensity distribution can be improved by using the light emitting element 1E.

Although some embodiments according to the present invention have been exemplified above, it is needless to say that the present invention is not limited to the above-mentioned embodiments, and can be arbitrary without departing from the gist of the present invention. ..
For example, the light emitting device may be configured to include the wavelength conversion member 9 or may be configured to further include the Fresnel lens 6.
The shape of the upper surface of the wavelength conversion member 9 may be a quadrangle, a quadrangle, an ellipse, or a rounded quadrangle, and the shape may be arbitrarily changed in consideration of the combination of the lens and the secondary optical system. You can The light emitting surface of the wavelength conversion member 9 is not limited to a flat surface, and may be a concave surface or a convex surface. The light emitting surface of the wavelength conversion member 9 may have irregularities.

For example, in the light emitting device 100, the p-type semiconductor layer, the active layer, and the n-type semiconductor layer may be removed from the transparent substrate 10 at the outer edge portion 22s of the semiconductor stacked body 20 in a plan view. .. In this case, since the light emitting device is configured by laminating the interlayer insulating film 50 and the like on the translucent substrate 10 on the outer periphery of the second semiconductor region 22 without interposing the semiconductor layer, the outer peripheral edge of the light emitting device. The thickness of the part becomes thin. When a light emitting device including the wavelength conversion member 9 is manufactured using this light emitting device, when the light emitting device joined to the composite sheet is covered with a resin containing a light reflecting material in step 209, light is emitted. Since the thickness of the outer peripheral portion of the device (the region indicated by reference numeral 302 in FIG. 3) is thin, there is an effect that the resin containing the light-reflecting substance (the material of the light-reflecting member 7b) easily goes around. The light emitting devices 100B, 100D, 100E can be similarly modified.

Similarly, in the light emitting device 100C, the p-type semiconductor layer, the active layer, and the n-type semiconductor layer may be removed from the transparent substrate 10 at the outer edge portion 22s of the second semiconductor stacked body 22C. ..

The light emitting devices 100C, 100D, and 100E can be modified to include the n-side opening 53n of the interlayer insulating film 50 shown in FIG.

For example, the external connection electrode 8 of the light emitting device 100 may have a laminated structure using a plurality of kinds of metals. In particular, at least the uppermost layer of the external connection electrode 8 whose upper surface is the mounting surface is Au in order to prevent corrosion and enhance the bondability with a mounting substrate using an Au alloy-based adhesive member such as Au—Sn eutectic solder. Is preferably formed. When the lower layer portion of the external connection electrode 8 is formed of a metal other than Au, such as Cu, the upper layer portion is made of Ni/Au or Ni/Pd/Au in order to improve the adhesion with Au. However, it may have a laminated structure. Furthermore, the upper surface of the external connection electrode 8 may have an uneven shape.

100, 100B, 100C, 100D, 100E Light-emitting device 1, 1B, 1C, 1D, 1E Light-emitting element 2 Light source 6 Fresnel lens 7a, 7b Light-reflecting member 8 External connection electrode 80n n-side external connection electrode 80p p-side external connection electrode 81n First n-side external connection electrode 81p First p-side external connection electrode 82n Second n-side external connection electrode 82p Second p-side external connection electrode 85 Seed layer 9 Wavelength conversion member 91 First phosphor layer 92 Second phosphor layer 93 Light transmission member 10 translucent substrate 20 semiconductor laminated body 21 first semiconductor region (first semiconductor laminated body)
21n n-type semiconductor layer (first n-type semiconductor layer)
21a 1st active layer 21p 1st p-type semiconductor layer 21h 1st hole 22 2nd semiconductor region 22C 2nd semiconductor laminated body 22n 2nd n-type semiconductor layer 22a 2nd active layer 22h 2nd hole 22p 2nd p-type semiconductor layer 22s outer edge part 31p First p-side light reflection layer (first p-side electrode)
32p Second p-side light reflection layer (second p-side electrode)
40 cover electrode 41n opening 41p opening 50 interlayer insulating film 51p, 52p p side opening 51n, 52n, 53n n side opening 61n first n side electrode 61p first p side conductive layer 62n second n side electrode 62p second p side conductive layer 70 insulation protection Membrane 71n, 72n n-side opening 71p, 72p p-side opening

Claims (21)

A transparent substrate,
A first p-type semiconductor layer provided above the first n-type semiconductor layer, and a first p-type semiconductor layer provided above the first n-type semiconductor layer; A first semiconductor laminate having a first hole in the semiconductor layer;
A first p-side electrode provided on the first p-type semiconductor layer,
A first n-side electrode which is provided above a part of the first p-side electrode and in the first hole, and which is connected to the first n-type semiconductor layer;
A second n-type semiconductor layer provided above the translucent substrate and around the first semiconductor stacked body in a plan view; and a second p-type semiconductor layer provided above the second n-type semiconductor layer. And a second semiconductor laminated body having a plurality of second holes in the second p-type semiconductor layer,
A second p-side electrode provided on the second p-type semiconductor layer,
Have a, a part of the above and provided in a plurality of the second hole, and the 2n-side electrode connected to the first 2n-type semiconductor layer of the first 2p-side electrode,
The plurality of second holes are arranged along the inner edge of the second p-type semiconductor layer,
The second n-side electrode extends along the plurality of arranged second holes,
The light emitting device , wherein the plurality of second holes are arranged closer to an inner edge portion of the second p-type semiconductor layer than an outer edge portion of the second p-type semiconductor layer . A transparent substrate,
One n-type semiconductor layer provided above the transparent substrate,
A first p-type semiconductor layer provided above a part of the n-type semiconductor layer and having a first hole;
A first p-side electrode provided on the first p-type semiconductor layer,
A first n-side electrode which is provided above a part of the first p-side electrode and in the first hole, and which is connected to the n-type semiconductor layer;
A second p-type semiconductor layer which is provided above the n-type semiconductor layer and around the first p-type semiconductor layer in plan view and has a plurality of second holes;
A second p-side electrode provided on the second p-type semiconductor layer,
Have a, a part of the above and provided in a plurality of the second hole, and the 2n-side electrode connected to the n-type semiconductor layer of the first 2p-side electrode,
The plurality of second holes are arranged along the inner edge of the second p-type semiconductor layer,
The second n-side electrode extends along the plurality of arranged second holes,
The light emitting device , wherein the plurality of second holes are arranged closer to an inner edge portion of the second p-type semiconductor layer than an outer edge portion of the second p-type semiconductor layer . The outer edge portion of the second n-type semiconductor layer is outside the second p-type semiconductor layer in plan view,
The light emitting device according to claim 1, wherein the second n-side electrode extends from above the outer edge portion of the second p-type semiconductor layer to cover the outer edge portion of the second n-type semiconductor layer. A part of the second n-side electrode extending on the outer edge portion of the second n-type semiconductor layer is connected to the outer edge portion of the second n-type semiconductor layer along the second p-type semiconductor layer in plan view. The light emitting device according to claim 3, wherein The outer edge portion of the n-type semiconductor layer is outside the second p-type semiconductor layer in plan view,
The light emitting device according to claim 2, wherein the second n-side electrode extends from above the outer edge of the second p-type semiconductor layer to cover the outer edge of the n-type semiconductor layer. A part of the second n-side electrode extending on the outer edge portion of the n-type semiconductor layer is connected to the outer edge portion of the n-type semiconductor layer along the second p-type semiconductor layer in a plan view. Item 5. The light emitting device according to item 5. 7. The light emitting device according to claim 3, wherein the second n-side electrode contains at least one kind selected from Ag, Al, Pt, and Rh. 7. The light emitting device according to claim 1, wherein a plurality of the first holes are provided, and the plurality of the first holes are arranged along an outer edge portion of the first p-type semiconductor layer. .. The light emitting device according to claim 8, wherein the first n-side electrode extends along the plurality of arranged first holes and integrally connects the plurality of first holes. In the light-emitting element according to any one of claims 1 to 9, and the transparent substrate and the external connection electrodes are provided on the opposite side,
The external connection electrode is
An n-side external connection electrode connected to the first n-side electrode and the second n-side electrode,
A first p-side external connection electrode connected to the first p-side electrode,
And a second p-side external connection electrode connected to the second p-side electrode. In the light-emitting element according to any one of claims 1 to 9, and the transparent substrate and the external connection electrodes are provided on the opposite side,
The external connection electrode is
A first n-side external connection electrode connected to the first n-side electrode,
A second n-side external connection electrode connected to the second n-side electrode,
A light emitting device having a p-side external connection electrode connected to the first p-side electrode and the second p-side electrode. In the light-emitting element according to any one of claims 1 to 9, and the transparent substrate and the external connection electrodes are provided on the opposite side,
The external connection electrode is
A first n-side external connection electrode connected to the first n-side electrode,
A second n-side external connection electrode connected to the second n-side electrode,
A first p-side external connection electrode connected to the first p-side electrode,
And a second p-side external connection electrode connected to the second p-side electrode. The first p-side electrode of the light emitting element is
A first p-side light reflection layer connected to substantially the entire upper surface of the first p-type semiconductor layer;
A first p-side conductive layer provided on the first p-side light reflection layer and connected to the external connection electrode;
The light emitting device according to any one of claims 10 to 12 including. The light emitting device according to claim 13 , wherein the first p-side light reflection layer contains at least one selected from Ag, Al, Pt, Rh, and Ir. The second p-side electrode of the light emitting element is
A second p-side light reflection layer connected to substantially the entire upper surface of the second p-type semiconductor layer;
A second p-side conductive layer provided on the second p-side light reflection layer and connected to the external connection electrode;
The light emitting device according to any one of claims 10 to 14 including. The light emitting device according to claim 15 , wherein the second p-side light reflection layer contains at least one selected from Ag, Al, Pt, Rh, and Ir. Wherein the 1p-type semiconductor layer of the light emitting element, the light emitting device according to any one of claims 10 to 16, the shape of the outer edge in a plan view is circular. Wherein the first 2p-type semiconductor layer of the light emitting element, the light emitting device according to any one of claims 10 to 17 the shape of the outer edge in a plan view is circular. A wavelength conversion member on the transparent substrate side of the light emitting element,
The wavelength conversion member, in plan view,
A first phosphor layer covering the first p-type semiconductor layer;
The light emitting device according to any one of claims 10 to 18 , further comprising: a second phosphor layer provided around the first phosphor layer and covering the second p-type semiconductor layer. 20. The light emitting device according to claim 19 , wherein a wavelength of light converted from the light of the light emitting element by the second phosphor layer is longer than a wavelength of light converted from light of the light emitting element by the first phosphor layer. The light emitting device according to claim 19 or 20 , further comprising a Fresnel lens provided on a surface side of the wavelength conversion member opposite to the transparent substrate.

Images