JP6698447B2 - Power semiconductor modules and power electronics equipment - Google Patents

Description

  The present invention relates to a power semiconductor module and a power electronic device equipped with the power semiconductor module.

  A conventional power semiconductor module includes a power device that switches a current path by a switching operation, a base plate that conducts and radiates heat generated in the power semiconductor module, an insulator that insulates the power device from the base plate, and a power semiconductor. The module includes a main terminal and a control terminal group that electrically connect the module to the outside. Further, the power semiconductor module is provided with a temperature monitor element on the power device or the base plate to detect the junction temperature Tj or the case temperature Tc of the power semiconductor module, or a current detection monitor element is provided to provide a current Ic flowing through the power device. Is being detected. Hereinafter, elements that detect the operating state of the power semiconductor module, such as a temperature monitor element and a current detection monitor element, are collectively referred to as a monitor element.

  The information detected by the monitor element as described above is basically fed back to the drive protection control of the operating power semiconductor module as a signal indicating the operating information indicating the operating state of the power semiconductor module. Hereinafter, a signal indicating information detected by the monitor element is referred to as a monitor element signal.

  Conventionally, there is a power semiconductor module that outputs the signal of the monitor element to the outside, but since the power semiconductor module directly outputs the signal of the monitor element to the outside, the power semiconductor module is It is impossible to know if it was used in such a situation.

  There is a power semiconductor module that temporarily stores a signal of a monitor element, and for example, a technique is disclosed in which a memory that uses a gate signal of a power device as a power source is mounted and a signal of a temperature monitor or the like is stored in the memory (for example, , Patent Document 1). Further, there is disclosed a technique of counting up a change in the junction temperature Tj or the case temperature Tc to artificially grasp the usage environment after the driving of the power semiconductor module is stopped and estimating the life of the power semiconductor module ( See, for example, Patent Document 2).

JP 2004-8771 A JP, 2005-56415, A

  With conventional power semiconductor modules, it is not possible to know in what state the power semiconductor module was used after the drive was stopped, so troubleshooting is extremely difficult when an error occurs and the power semiconductor module suddenly stops. There was a problem.

  Further, in the power semiconductor module that does not output the signal of the monitor element to the outside, in order to grasp the worst case of the operating state of the power semiconductor module, that is, the maximum value of the junction temperature Tj, the case temperature Tc, or the current Ic, the power semiconductor module is used. Since it is necessary to separately provide a monitor element outside the module, there is a problem that the cost of the entire device including the power semiconductor module and the size thereof are increased. In addition, as the position of the monitor element moves away from the power device in which the problem actually occurs, the signal accuracy deteriorates and noise is superimposed due to the influence of wiring impedance and the like.

  In Patent Document 1, since data such as temperature and time during operation is always stored, there is a problem that the amount of information to be stored becomes huge, the memory capacity becomes large and the cost increases. Further, there is a problem that the memory malfunctions and data is lost due to electromagnetic noise accompanying the switching operation of the power device.

  In Patent Document 2, a threshold value for counting up a change in the junction temperature Tj or the case temperature Tc is set in advance. However, if the change is equal to or more than the threshold value, the count is uniformly increased, and thus the temperature change has a high influence on the life. Since the count-up in 1 and the count-up in almost the change in the temperature of the threshold value are treated in the same manner, there is a problem that it is difficult to improve the accuracy of life estimation. As a measure against such a problem, there is a method of setting a large number of thresholds finely, but in this case, another problem occurs that the control load increases, and the cost and size increase. Further, in Patent Document 2, it is not possible to grasp how much the junction temperature Tj or the case temperature Tc of the power semiconductor module has risen after the driving is stopped.

  The present invention has been made to solve such a problem, and it is possible to maintain the maximum value of the signal of the monitor element in a state in which the deterioration of the signal accuracy and the influence of noise are suppressed even after the driving is stopped. An object is to provide a possible power semiconductor module and power electronic equipment.

In order to solve the above problems, a power semiconductor module according to the present invention provides a power device, at least one monitor element for detecting an operating state of the power device, and a maximum value of a signal indicating the operating state detected by the monitor element. The power supply supplied to the peak hold circuit includes at least one peak hold circuit that holds the power, and an output unit that outputs the maximum value of the signal held by the peak hold circuit to the outside. Ru different from the.

According to the present invention, a power semiconductor module includes a power device, at least one monitor element for detecting an operating state of the power device, and at least one peak hold for holding a maximum value of a signal indicating the operating state detected by the monitor element. comprising a circuit, and an output unit for the peak hold circuit outputs the maximum value of the signal to be stored in the external, the power supplied to the peak hold circuit, because different from the control power supplied to the power semiconductor module, the monitor It is possible to keep the maximum value of the signal of the element in a state where the deterioration of the signal accuracy and the influence of noise are suppressed even after the driving is stopped.

It is a figure which shows an example of a structure of the power semiconductor module by Embodiment 1 of this invention. It is a figure which shows an example of a structure of the power semiconductor module by Embodiment 1 of this invention. FIG. 3 is a diagram showing an example of a peak hold circuit according to the first embodiment of the present invention. FIG. 3 is a diagram showing an example of a signal detected by the monitor element according to the first embodiment of the present invention. It is a figure which shows an example of a structure of the power semiconductor module by Embodiment 1 of this invention. It is a figure which shows an example of a structure of the power semiconductor module by Embodiment 1 of this invention. It is a figure which shows an example of a structure of the power semiconductor module by Embodiment 1 of this invention. FIG. 11 is a sequence diagram showing an example of operation of the power electronic device according to the second embodiment of the present invention. It is a figure which shows an example of the timing which reads the operation information maximum value from the power semiconductor module by Embodiment 2 of this invention. It is a figure which shows an example of the timing which reads the operation information maximum value from the power semiconductor module by Embodiment 2 of this invention. It is a figure which shows an example of a structure of the power semiconductor module by a premise technique. It is a figure which shows an example of a structure of the power semiconductor module by a premise technique.

  Embodiments of the present invention will be described below with reference to the drawings.

<Prerequisite technology>
First, a prerequisite technique that is a prerequisite for the present invention will be described.

  FIG. 11 is a diagram showing an example of the configuration of the power semiconductor module 25 according to the base technology.

  As shown in FIG. 11, the power semiconductor module 25 includes a power device 2, a case temperature monitor element 3, a gate terminal 5, an emitter terminal 6, and a case temperature signal output terminal 26. The gate terminal 5 is connected to the gate of the power device 2. The emitter terminal 6 is connected to the emitter of the power device 2. The case temperature signal output terminal 26 is connected to the case temperature monitor element 3. The power device 2 is an IGBT (Insulated Gate Bipolar Transistor).

  The case temperature monitor element 3 is provided on a base plate (not shown) of the power device 2 and detects the case temperature Tc of the power semiconductor module 25. The case temperature monitor element 3 outputs a signal of the detected case temperature Tc to the outside via the case temperature signal output terminal 26.

  FIG. 12 is a diagram showing an example of the configuration of the power semiconductor module 27 according to the base technology.

  As shown in FIG. 12, the power semiconductor module 27 includes a power device 2, a drive circuit 9, a junction temperature monitor element 10, a current detection monitor element 11, a control power supply terminal 12, a drive signal terminal 13, and an error. The signal terminal 14 and the reference potential terminal 15 are provided. The power semiconductor module 27 is an intelligent power semiconductor module having a drive circuit 9 that controls driving of the power device 2.

  The control power supply terminal 12, the drive signal terminal 13, the error signal terminal 14, and the reference potential terminal 15 are connected to the drive circuit 9. The control power supply VD supplied from the outside is input to the drive circuit 9 via the control power supply terminal 12. The drive signal Vin supplied from the outside is input to the drive circuit 9 via the drive signal terminal 13. The reference potential GND supplied from the outside is input to the drive circuit 9 via the reference potential terminal 15.

  The junction temperature monitor element 10 is provided on the power device 2 and detects the junction temperature Tj of the power device 2. The junction temperature monitor element 10 outputs information on the detected junction temperature Tj to the drive circuit 9. Further, the current detection monitor element 11 shunts a part of the main current of the power device 2 to detect the amount of energization of the current as the current Ic, and outputs information on the detected current Ic to the drive circuit 9. That is, the information on the junction temperature Tj detected by the junction temperature monitor element 10 and the information on the current Ic detected by the current detection monitor element 11 are fed back to the drive circuit 9.

  The drive circuit 9 determines whether or not an error has occurred in the power device 2 based on the information of the junction temperature Tj input from the junction temperature monitor element 10 or the information of the current Ic input from the current detection monitor element 11. to decide. Then, the drive circuit 9 outputs an error signal to the outside through the error signal terminal 14 when an error occurs. At this time, the drive circuit 9 may stop driving the power device 2. Here, the error that occurs in the power device 2 means, for example, that the junction temperature Tj is equal to or higher than a predetermined temperature, or that the current Ic is equal to or higher than a predetermined current value.

  When an error occurs in the power semiconductor module and it suddenly stops, it is important to understand what state the power semiconductor module was used in after the drive was stopped to clarify the cause of the error. .. Therefore, it is necessary to understand the worst case of the operating state of the power semiconductor module in order to clarify the cause of the error.

  Since the power semiconductor module 25 shown in FIG. 11 outputs the signal of the case temperature Tc to the outside as it is, it is possible to grasp in what state the power semiconductor module is used after the driving of the power semiconductor module is stopped. I can't. Further, since the power semiconductor module 27 shown in FIG. 12 does not output the information of the junction temperature Tj and the current Ic to the outside, it is possible to determine in what state the power semiconductor module was used after the driving of the power semiconductor module was stopped. I can't figure it out. The present invention has been made to solve such a problem, and will be described in detail below.

<Embodiment 1>
FIG. 1 is a diagram showing an example of the configuration of a power semiconductor module 1 according to the first embodiment of the present invention.

  As shown in FIG. 1, the power semiconductor module 1 is characterized by including a peak hold circuit 4 and an operation information output terminal 7. Other configurations are the same as those of the power semiconductor module 25 shown in FIG. 11, and thus detailed description thereof will be omitted here. In FIG. 1, an IGBT is used as an example of the power device 2, but another power device may be used.

  Information on the case temperature Tc detected by the case temperature monitor element 3 is input to the peak hold circuit 4 as a signal of the case temperature monitor element 3. The peak hold circuit 4 holds the maximum value of the signals of the case temperature monitor element 3 input, that is, the maximum value of the case temperature Tc detected by the case temperature monitor element 3. The peak hold circuit 4 outputs the maximum value of the held signal of the case temperature monitor element 3 as the maximum operation information value to the outside through the operation information output terminal 7 at a predetermined timing. That is, the motion information output terminal 7 has a function as an output unit that outputs the maximum motion information value.

  FIG. 2 is a diagram showing an example of the configuration of the power semiconductor module 8 according to the first embodiment of the present invention.

  As shown in FIG. 2, the power semiconductor module 8 is characterized by including a peak hold circuit 4 and an operation information output terminal 7. Other configurations are similar to those of the power semiconductor module 27 shown in FIG. 12, and therefore detailed description thereof is omitted here.

  Information on the junction temperature Tj detected by the junction temperature monitor element 10 is input to the peak hold circuit 4 as a signal of the junction temperature monitor element 10. The peak hold circuit 4 holds the maximum value of the input signals of the junction temperature monitor element 10, that is, the maximum value of the junction temperature Tj detected by the junction temperature monitor element 10. The peak hold circuit 4 outputs the maximum value of the held signal of the junction temperature monitor element 10 as the maximum operation information value to the outside through the operation information output terminal 7 at a predetermined timing. That is, the motion information output terminal 7 has a function as an output unit that outputs the maximum motion information value.

  Although FIG. 2 shows the case where the power semiconductor module 8 includes the junction temperature monitor element 10 and the current detection monitor element 11, the present invention is not limited to this. The power semiconductor module 8 may include only the junction temperature monitor element 10.

  Next, the peak hold circuit 4 will be described. The peak hold circuit 4 may be configured to temporarily hold the maximum value of the signal of the monitor element, and may be configured by a memory device or the like. Further, in consideration of cost efficiency and noise resistance, the circuit may be configured as shown in FIG. 3, for example.

  The peak hold circuit shown in FIG. 3 includes a comparison element 16, a peak through element 17, a peak holding element 18, a reset element 19, and a buffer element 20. The comparison element 16 compares the monitor element signal, which is the signal of the monitor element, with the maximum value of the operation information currently held, and transmits a signal showing a large value to the subsequent stage. When the signal output from the comparison element 16 is larger than the maximum value of the operation information currently held, the peak through element 17 transmits a signal to that effect to the subsequent stage. The peak holding element 18 holds the signal level of the peak through element 17. The buffer element 20 transmits the signal of the peak hold element 18 to the subsequent stage without being affected by the circuit connected to the latter stage of the peak hold circuit. The reset element 19 resets the peak holding element 18.

  In the peak hold circuit shown in FIG. 3, the comparison element 16 may be omitted, but the signal of the monitor element may not exceed the signal level held by the peak holding element 18 for a long time. When the signal level of the holding element 18 decreases with the passage of time due to a factor such as spontaneous discharge, the accuracy of the maximum value of operation information decreases. Therefore, the accuracy as the peak hold can be improved by providing the comparison element 16 as shown in FIG. 3 and feeding back the maximum operation information value to the comparison element 16 at any time.

  By providing the reset element 19 as shown in FIG. 3 so as to always reset the maximum value of the operation information at the time of reading, and to periodically read and reset the maximum value of the operation information, the operation during the specific period is performed. The maximum information value can be retrieved repeatedly.

  The monitor element described above is assumed to have a higher signal level as the operating state becomes more intense, but if the operating state becomes more severe as the signal level becomes lower, it is not shown. The signal can be applied to this embodiment by inverting and level shifting the signal.

  The monitor element detects the case temperature Tc inside the power semiconductor module 1 as shown in FIG. 1 or the junction temperature Tj of the power device 2 itself as shown in FIG. Then, the maximum value of the detected information is externally read as the maximum value of the motion information. Externally, the history of the read maximum value of operation information can be retained and by analyzing the history, deterioration of the power semiconductor module can be grasped, optimization of the maintenance time of the power semiconductor module, or occurrence of an unexpected failure. Avoidance can be realized. In the power semiconductor module, since the key parts are power devices from the viewpoint of current energization control, using the information of the junction temperature Tj rather than the case temperature Tc has a more direct effect.

  For example, a factory automation (FA) device that is a factory automation device that continuously performs the same operation every day from the time the power is turned on at the beginning of the day until the power is turned off at the end of the day. Assume that a power semiconductor module is used. In this case, if it seems that the maximum value of the junction temperature Tj, that is, the maximum value of the operation information, rises day after day, the day before, and the current day, even though the FA devices perform the same operation, It can be estimated that some kind of deterioration is progressing in the power semiconductor module, such as structural deterioration such as solder fatigue inside the power semiconductor module or deterioration of the characteristics of the power device. Therefore, it is possible to change the operating condition of the FA device system or optimize the timing of maintenance, and to prevent the FA device system from being stopped due to an unexpected failure.

  As described in Patent Document 2, there is also a method of estimating the life of the power semiconductor module by performing processing as needed, but the amount of electrical noise generated increases during heavy load operation that most affects the life of the power semiconductor module. Therefore, it is difficult to improve the accuracy of signal transmission because noise countermeasures and know-how are required when monitoring outside the power semiconductor module as needed.

  According to the present embodiment, the maximum operation information is retained without disappearing even after the power semiconductor module has stopped the energization control or during the light load operation in which the amount of generated electrical noise has decreased. Therefore, since monitoring outside the power semiconductor module may be performed at a timing when the amount of electrical noise generated is small, the accuracy of signal transmission can be improved.

  Taking the above FA device as an example, the timing of resetting the peak hold circuit may be only once a day, but as the number of times of resetting is increased, the history transition of the maximum operation information value can be grasped more finely. .. However, if the number of resets is extremely large, the control load will increase and the cost of the FA equipment system will increase. Therefore, set the number of resets in consideration of the features and cost-effectiveness of the FA equipment system to be applied. It is desirable to do.

  Note that, for example, in the power semiconductor module shown in FIGS. 11 and 12, it is possible to provide a peak hold circuit or a monitor element outside the power semiconductor module to obtain the same effect as that of the present embodiment. The module is used in an environment where there is a lot of electrical noise, and it is largely empirical to take measures against noise or to make it small in size, and it is not possible to obtain a sufficient effect. On the other hand, since the power semiconductor module according to the present embodiment has the peak hold circuit, cost and size increase can be suppressed to the minimum.

  The case where the signals of the monitor elements are the junction temperature Tj and the case temperature Tc has been described above, but any signal representing the operating state of the power device can be applied to this embodiment. For example, as shown in FIG. 4, as the signal of the monitor element, the current Ic that energizes the power device 2, the voltage Vce applied to the power device 2, the voltage Vge applied to the drive terminal of the power device 2, and the power A main power supply voltage Vcc, which is a DC bus voltage supplied to the semiconductor module, can be cited, and by applying at least one of them to the present embodiment, it can be developed into various application examples. Further, although the configuration becomes complicated, a peak hold circuit for the signal of a specific monitor element is provided, and the signal of another monitor element is sampled and held to correspond to the timing of the maximum operation information value in the peak hold circuit. It may be possible to make it easier to troubleshoot or to achieve advanced control of applied equipment by temporarily storing other signal information.

  Main causes of destruction of the power semiconductor module are overheating, overcurrent, and overvoltage. Of these, overheat can be detected by the junction temperature Tj or the case temperature Tc, overcurrent can be detected by the current Ic, and overvoltage can be detected by the voltage Vce, the voltage Vcc, or the voltage Vge. It is possible to detect, and by combining these, it is possible to contribute to troubleshooting when an unexpected error occurs.

  Thermal fatigue is mentioned as a factor of the life of the power semiconductor module, and its representative examples are the power cycle life and the thermal cycle life. It is possible to estimate the deterioration state of fatigue and optimize the maintenance of the system.

  FIG. 5: is a figure which shows an example of a structure of the power semiconductor module 21 by this Embodiment.

  As shown in FIG. 5, the power semiconductor module 21 is characterized by including a plurality of peak hold circuits corresponding to the plurality of monitor elements. Other configurations are similar to those of the power semiconductor module 8 shown in FIG. 2, and therefore detailed description thereof is omitted here.

  Information on the junction temperature Tj detected by the junction temperature monitor element 10 is input to the peak hold circuit 41 as a signal of the junction temperature monitor element 10. The peak hold circuit 41 holds the maximum value of the signals of the input junction temperature monitor element 10, that is, the maximum value of the junction temperature Tj detected by the junction temperature monitor element 10. The peak hold circuit 41 outputs the maximum value of the held signal of the junction temperature monitor element 10 as the maximum operation information value to the outside via the operation information output terminal 71 at a predetermined timing.

  Information on the current Ic detected by the current detection monitor element 11 is input to the peak hold circuit 42 as a signal of the current detection monitor element 11. The peak hold circuit 42 holds the maximum value of the signals of the input current detection monitor element 11, that is, the maximum value of the current Ic detected by the current detection monitor element 11. The peak hold circuit 42 outputs the maximum value of the held signal of the current detection monitor element 11 as the maximum operation information value to the outside via the operation information output terminal 72 at a predetermined timing.

  In the power semiconductor module as shown in FIG. 5, the number of operation information output terminals is increased by the number of peak hold circuits, which complicates the internal and external configurations of the power semiconductor module and causes a cost increase. In order to avoid such a problem, the power semiconductor module 22 shown in FIG. 6 may be used.

  As shown in FIG. 6, the power semiconductor module 22 is characterized by including a switching output unit 23. Other configurations are the same as those of the power semiconductor module 21 shown in FIG. 5, and therefore detailed description thereof is omitted here.

  The switching output unit 23 can sequentially output while switching between the maximum operation information value held by the peak hold circuit 41 and the maximum operation information value held by the peak hold circuit 42. The switching output unit 23 is configured by using a semiconductor switch or a relay element. Since the power semiconductor module 22 includes the switching output unit 23, it is possible to output a plurality of operation information maximum values to the outside without increasing the number of operation information output terminals. In this way, the switching output unit 23 has a function as an output unit that outputs the maximum operation information value to the outside.

  Further, as shown in FIG. 7, the switching output unit 23 may have a wireless communication function. Even with a configuration such as the power semiconductor module 24 shown in FIG. 7, it is possible to output a plurality of maximum operation information values to the outside without increasing the number of operation information output terminals.

  From the above, according to the first embodiment, it becomes possible to temporarily store the maximum value of the operation information inside the power semiconductor module and to transmit the signal to the outside at the timing when the generation amount of the electrical noise is small. .. That is, even after the driving of the maximum value of the signal of the monitor element is stopped, it is possible to maintain the deterioration of the signal accuracy and the influence of noise. Further, wireless communication with low noise tolerance can be used. Furthermore, since it is not necessary to change the hardware on the application device side that has acquired the maximum value of operation information from the power semiconductor module, it is possible to significantly reduce the work load and time at the time of introduction.

  In addition, in FIGS. 5 to 7, the case where the number of the monitor elements to which the maximum value of the operation information is output is two has been described as an example, but the present invention is not limited to this, and as many peak hold circuits as the number of target monitor elements are provided. Just do it.

  In FIG. 6, the power sources of the peak hold circuits 41 and 42 and the switching output unit 23 are configured to retain their functions for a long time even after the control power source supplied to the power semiconductor module 22 is cut off. The effects of the first embodiment can be obtained even when a sudden power supply trouble or the like occurs. Here, as the configuration for holding the power sources of the peak hold circuits 41 and 42 and the switching output unit 23 for a long time, for example, a configuration in which the capacity of the capacitor used for stabilizing the power source of the target circuit is made sufficiently large is also possible. Good. Alternatively, a bidirectional battery having a charging function is provided separately from the control power source of the power semiconductor module 22, and when the control power source of the power semiconductor module 22 is supplied, the bidirectional battery and the peak hold circuit 41 are supplied from the control power source. , 42, and the switching output unit 23, and when the control power supply of the power semiconductor module 22 is cut off, the bidirectional battery supplies power to the peak hold circuits 41, 42 and the switching output unit 23. Good. That is, the power supplies of the peak hold circuits 41 and 42 and the switching output unit 23 may be different from the control power supply supplied to the power semiconductor module 22. The same applies to the power semiconductor module 24 shown in FIG. 7.

  In the above description, the main focus is on a 1 in 1 type power semiconductor module having one power device 2, but a 2 in 1 type having two power devices 2 (see FIG. 4), a 4 in 1 type having four power devices 2, The same effect can be obtained in the case of a 6-in-1 type having six power devices 2 or a power semiconductor module having another configuration.

<Second Embodiment>
In a second embodiment of the present invention, a power electronic device which is an application device equipped with the power semiconductor module described in the first embodiment will be described. Here, the power electronics device refers to all devices that process large power with a power semiconductor module.

  FIG. 8 is a sequence diagram showing an example of the operation of the power electronic device according to the second embodiment. In FIG. 8, the external operation of the power semiconductor module indicates an operation performed by an external processing unit other than the power semiconductor module in the power electronic equipment. Further, the power semiconductor module behavior indicates the operation of the power semiconductor module.

  In step S1, the external processing unit supplies control power to the power semiconductor module. In step S2, the external processing unit supplies the power semiconductor module with the main power supply voltage Vcc, which is a DC bus voltage.

  In step S3, the external processing unit performs drive control on the power semiconductor module. Specifically, the external processing unit inputs the drive signal Vin to the power semiconductor module. Further, the operation information maximum value is read from the power semiconductor module as required.

  In step S4, the power semiconductor module outputs the signal of the monitor element to the peak hold circuit. Further, the power semiconductor module outputs an error signal Fo as needed. Furthermore, the power semiconductor module outputs the maximum value of operation information when requested by the external processing unit.

  In step S5, the external processing unit stops the input of the drive signal Vin. In step S6, the power semiconductor module stops the energization operation and holds the operation information maximum value. In steps S7 and S8, the external processing unit reads the maximum value of operation information from the power semiconductor module after a certain period of time has elapsed. It should be noted that the fixed time from the stop of the energization operation to the reading of the maximum operation information value can be arbitrarily set by the external processing unit. As a result, it is possible to optimize the timing of automatically reading the maximum operation information value after stopping the energization operation according to the application of the power electronic device.

  FIG. 9 is a diagram showing an example of the timing at which the external processing unit reads the maximum operation information value from the power semiconductor module during normal operation.

  As shown in FIG. 9, during the energization operation, the external processing unit appropriately reads the maximum operation information value from the power semiconductor module according to the specifications of the power electronic device. Then, the external processing unit always reads the maximum value of operation information from the power semiconductor module after a lapse of a certain time after the power supply is stopped. The external processing unit always reads the maximum operation information value from the power semiconductor module when the control power supply of the power semiconductor module reaches a preset threshold value of the control power supply decrease.

  FIG. 10 is a diagram showing an example of the timing at which the external processing unit reads the maximum value of the operation information from the power semiconductor module when the abnormality related to the power drop occurs.

  As shown in FIG. 10, even during the energization operation, even when the system power is suddenly stopped or the connection cable of the power semiconductor module is pulled out or disconnected, and a system abnormality suddenly occurs with a decrease in the control power supply, , Read the maximum value of motion information. As a result, the reliability of the system can be improved.

  From the above, according to the second embodiment, the power electronic device can always grasp the worst operation information maximum value in the series of operations immediately before the energization operation stop.

  It should be noted that in the present invention, the respective embodiments can be freely combined, or the respective embodiments can be appropriately modified or omitted within the scope of the invention.

  1 power semiconductor module, 2 power device, 3 case temperature monitoring element, 4 peak hold circuit, 5 gate terminal, 6 emitter terminal, 7 operation information output terminal, 8 power semiconductor module, 9 drive circuit, 10 junction temperature monitoring element, 11 Current detection monitor element, 12 control power supply terminal, 13 drive signal terminal, 14 error signal terminal, 15 reference potential terminal, 16 comparison element, 17 peak through element, 18 peak holding element, 19 reset element, 20 buffer element, 21, 22 Power semiconductor module, 23 switching output section, 24, 25 power semiconductor module, 26 case temperature signal output terminal, 27 power semiconductor module, 41, 42 peak hold circuit, 71, 72 operation information output terminal.

Claims (10)

A power semiconductor module,
Power device,
At least one monitor element for detecting an operating state of the power device;
At least one peak hold circuit for holding the maximum value of the signal indicating the operating state detected by the monitor element;
An output unit that outputs the maximum value of the signal held by the peak hold circuit to the outside,
Equipped with
The power semiconductor module, wherein the power supplied to the peak hold circuit is different from the control power supplied to the power semiconductor module.   The signal is a junction temperature of the power device, a case temperature of the power semiconductor module, a current flowing through the power device, a voltage applied to the power device, a voltage applied to a drive terminal of the power device, and the The power semiconductor module according to claim 1, wherein the power semiconductor module is at least one of main power supply voltages supplied to the power semiconductor module. There are a plurality of the monitor elements and the peak hold circuits,
The power semiconductor module according to claim 1, wherein each of the peak hold circuits is provided corresponding to each of the monitor elements.   The power semiconductor module according to claim 3, wherein the output unit is a switching output unit that switches and outputs the maximum value of the signal held by each of the peak hold circuits.   The power semiconductor module according to claim 4, wherein the switching output unit outputs the maximum value of the signal to the outside by wireless communication.   The power semiconductor module according to claim 4, wherein the power supplied to the switching output unit is different from the control power supplied to the power semiconductor module.   A power electronic device equipped with the power semiconductor module according to claim 1.   8. The power electronic device according to claim 7, wherein the maximum value of the signal is read from the power semiconductor module after a predetermined time has elapsed after the energization operation of the power semiconductor module was stopped.   The power electronics device according to claim 8, wherein the predetermined time can be set arbitrarily.   10. The maximum value of the signal is read from the power semiconductor module when the control power supplied to the power semiconductor module falls below a predetermined threshold value, The maximum value of the signal is read from the power semiconductor module. Power electronics equipment.

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