JP6691995B2 - 半導体ダイ - Google Patents
半導体ダイ Download PDFInfo
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- JP6691995B2 JP6691995B2 JP2019133654A JP2019133654A JP6691995B2 JP 6691995 B2 JP6691995 B2 JP 6691995B2 JP 2019133654 A JP2019133654 A JP 2019133654A JP 2019133654 A JP2019133654 A JP 2019133654A JP 6691995 B2 JP6691995 B2 JP 6691995B2
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- 239000004065 semiconductor Substances 0.000 title claims description 61
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 47
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- 229910052765 Lutetium Inorganic materials 0.000 claims description 8
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- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- 229910052706 scandium Inorganic materials 0.000 claims description 6
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- IBDVWXAVKPRHCU-UHFFFAOYSA-N 2-(2-methylprop-2-enoyloxy)ethyl 3-oxobutanoate Chemical compound CC(=O)CC(=O)OCCOC(=O)C(C)=C IBDVWXAVKPRHCU-UHFFFAOYSA-N 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- 229910052746 lanthanum Inorganic materials 0.000 claims description 2
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- BFMYDTVEBKDAKJ-UHFFFAOYSA-L disodium;(2',7'-dibromo-3',6'-dioxido-3-oxospiro[2-benzofuran-1,9'-xanthene]-4'-yl)mercury;hydrate Chemical compound O.[Na+].[Na+].O1C(=O)C2=CC=CC=C2C21C1=CC(Br)=C([O-])C([Hg])=C1OC1=C2C=C(Br)C([O-])=C1 BFMYDTVEBKDAKJ-UHFFFAOYSA-L 0.000 description 1
- 239000000975 dye Substances 0.000 description 1
- 238000001652 electrophoretic deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
- F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
- F21K9/90—Methods of manufacture
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0041—Processes relating to semiconductor body packages relating to wavelength conversion elements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/501—Wavelength conversion elements characterised by the materials, e.g. binder
- H01L33/502—Wavelength conversion materials
- H01L33/504—Elements with two or more wavelength conversion materials
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- General Engineering & Computer Science (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Description
suppressor (TVS))ダイオードと呼ばれる。2つのそのような逆並列ダイオードは、それらの極性が逆になるように接続される。すなわち、一方のダイオードのアノードが、他方のダイオードのカソードに接続される。非意図的に逆バイアスされたLEDが、こうして、順バイアスされたTVSダイオード(「保護ダイオード」)によって保護される。それ自身の逆並列保護ダイオードを有するLEDを含むように、モノリシックダイを製造することができる。すなわち、2つの半導体ダイオードは、同じ製造プロセスにおいて共通の基板上に形成される。
detection)のために、又はデュアルカラーフラッシュにおいて使用される用途に適している。
YAG:Ce;
(Y,Lu)AG:Ce及び(Ba,Sr)2Si5N8:Eu (BSSN);
Sr[LiAl3N4]:Eu2+;
Eu活性化Ba-Mg-Aluminate;
ZnS:Ag;
Sr3MgSi2O8:Eu;
Y3-X Al5-y Gay O12:Cex(0.002<
x <0.12及び0 ≦ y ≦ 0.4); 又は
Sr1-x-y Cay SiAlN3:Eux(0.001< x
<0.03及び0 ≦ y ≦ 1)
のいずれかを含む。
RE3 Ga5-x-y Ax SiO14 :Cry
(RE = La, Nd, Gd, Yb, Tm; A = Al, Sc) (ここで、0 ≦ x ≦1及び0.005 ≦y ≦ 0.1);
Gd3-x REx Sc2-y-z Lny Ga3-w
Alw O12 :Crz (Ln = Lu, Y, Y, Yb, Tm; RE = La,
Nd) (ここで、0 ≦ x ≦ 3; 0 ≦ y ≦ 1.5; 0 ≦z ≦0.3; 及び0 ≦w ≦2; );
AAEM1-x F6 : Crx (A = Li, Cu; AE =
Sr, Ca; M = Al, Ga, Sc) (ここで、0.005 ≦ x ≦ 0.2);
A2-x(WO4)3 Crx (A = Al,
Ga, Sc, Lu, Yb) (ここで、0.003 ≦ x ≦0.5; 又は
Sc1-x-y Ax BO3 : Cry (A
= Ga, Al, In, Lu, Y, Yb) (ここで、0 ≦ x ≦ 1 及び0.005 ≦ y ≦ 0.1)
のいずれかを含む。
半導体ダイ 1
分離層 10
発光ダイオード L1、L2
ダイオード D1、D2
蛍光体層 P1、P2
第1スペクトル 31
第2スペクトル 32
波長差 Δλ
第1ダイ領域 A1
第2ダイ領域 A2
ダイパッケージ 60
接点パッド 61, 62
スイッチ S1、S2、S3
電圧源 V1, V2
電流シンク C1
電子デバイス 7
カメラレンズ 70
フラッシュ配置 71
Claims (14)
- 少なくとも第1発光ダイオード(L1)及び第2発光ダイオード(L2)を含む半導体ダイ(1)であって:
前記第1発光ダイオード(L1)は、第1ダイ領域(A1)内に形成された第1ダイオード(D1)と、前記第1ダイ領域(A1)の上に堆積された第1蛍光体層(P1)とを含み;
前記第2発光ダイオード(L2)は、第2ダイ領域(A2)内に形成された第2ダイオード(D2)と、第2ダイ領域(A2)の上に堆積された第2蛍光体層(P2)とを含み;
前記第1ダイオード(D1)と前記第2ダイオード(D2)は、逆並列に電気的に接続されており;
前記第1発光ダイオード(L1)及び前記第2発光ダイオード(L2)は、異なる波長領域の電磁放射を発する、
半導体ダイ。 - 前記第1発光ダイオード(L1)によって発せられる前記電磁放射と、前記第2発光ダイオード(L2)によって発せられる前記電磁放射との間の波長の差(Δλ)が、少なくとも200nm、を含む、請求項1に記載の半導体ダイ。
- 各ダイオード(D1、D2)が、他方のダイオード(D2、D1)の過渡電圧抑制器として提供される、請求項1又は2に記載の半導体ダイ。
- 前記第1及び第2発光ダイオードの一方(L1)が、可視スペクトルの電磁放射を発する、請求項1乃至3のいずれか1項に記載の半導体ダイ。
- 前記の可視スペクトルを発する発光ダイオード(L1)の蛍光層(P1)が、
YAG:Ce;
(Y,Lu)AG:Ce及び(Ba,Sr)2Si5N8:Eu (BSSN);
Sr[LiAl3N4]:Eu2+;
Eu活性化Ba-Mg-Aluminate;
ZnS:Ag;
Sr3MgSi2O8:Eu;
Y3-X Al5-y Gay O12:Cex(0.002<
x <0.12及び0 ≦ y ≦ 0.4); 又は
Sr1-x-y Cay SiAlN3:Eux(0.001< x
<0.03及び0 ≦ y ≦ 1)
のいずれかを含む、請求項4に記載の半導体ダイ。 - 前記第1及び第2発光ダイオード(L1、L2)の両方が、可視スペクトルの電磁放射を発する、請求項1乃至5のいずれか1項に記載の半導体ダイ。
- 前記第1及び第2発光ダイオードの他方(L2)が、赤外線領域の電磁放射を発する、請求項5に記載の半導体ダイ。
- 前記の赤外線領域の発光ダイオード(L2)の前記蛍光層(P2)が、
RE3 Ga5-x-y Ax SiO14 :Cry
(RE = La, Nd, Gd, Yb, Tm; A = Al, Sc) (ここで、0 ≦ x ≦1及び0.005 ≦y ≦ 0.1);
Gd3-x REx Sc2-y-z Lny Ga3-w
Alw O12 :Crz (Ln = Lu, Y, Y, Yb, Tm; RE = La,
Nd) (ここで、0 ≦ x ≦ 3; 0 ≦ y ≦ 1.5; 0 ≦z ≦0.3; 及び0 ≦w ≦2; );
AAEM1-x F6 : Crx (A = Li, Cu; AE =
Sr, Ca; M = Al, Ga, Sc) (ここで、0.005 ≦ x ≦ 0.2);
A2-x(WO4)3 Crx (A = Al,
Ga, Sc, Lu, Yb) (ここで、0.003 ≦ x ≦0.5; 又は
Sc1-x-y Ax BO3 : Cry (A
= Ga, Al, In, Lu, Y, Yb) (ここで、0 ≦ x ≦ 1 及び0.005 ≦ y ≦ 0.1)
のいずれかを含む、請求項7に記載の半導体ダイ。 - 前記発光ダイオード(L1、L2)の両方が、赤色−赤外線領域の電磁放射を発する、請求項8に記載の半導体ダイ。
- 半導体ダイ(1)を製造する方法であって:
第1ダイ領域(A1)に第1ダイオード(D1)を形成し、第2ダイ領域(A2)に第2ダイオード(D2)を形成して、前記第1ダイオード(D1)と前記第2ダイオード(D2)が逆並列に接続されるようにするステップと;
第1発光ダイオード(L1)を完成させるように、前記第1ダイ領域(A1)上に第1蛍光体層(P1)を堆積するステップと;
第2発光ダイオード(L2)を完成させるように、前記第2ダイ領域(A2)の上に第2蛍光体層(P2)を堆積するステップであり、前記第1発光ダイオード(L1)及び前記第2発光ダイオード(L2)は、異なる波長領域の電磁放射を発する、
ステップと;
を含む方法。 - 前記第1ダイ領域(A1)が、総ダイ領域の少なくとも50%、より好ましくは少なくとも75%を含むように形成される、請求項10に記載の方法。
- 前記第1発光ダイオード(L1)と前記第2発光ダイオード(L2)との間に分離層(10)を形成するステップを含む、請求項10又は11に記載の方法。
- 撮像モジュールを備える電子デバイス(7)であって、前記撮像モジュールは、請求項1乃至9のいずれか1項に記載の半導体ダイを備える、電子デバイス。
- 前記半導体ダイは、前記撮像モジュールのカメラフラッシュ構成(71)の一部として実現される、請求項13に記載の電子デバイス。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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EP18184388.9 | 2018-07-19 | ||
EP18184388.9A EP3614437B1 (en) | 2018-08-22 | 2018-08-22 | Semiconductor die |
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JP2020021936A JP2020021936A (ja) | 2020-02-06 |
JP6691995B2 true JP6691995B2 (ja) | 2020-05-13 |
Family
ID=63012866
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Country Status (6)
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US (1) | US10873011B2 (ja) |
EP (1) | EP3614437B1 (ja) |
JP (1) | JP6691995B2 (ja) |
KR (1) | KR102327421B1 (ja) |
CN (1) | CN110739295B (ja) |
TW (1) | TWI705584B (ja) |
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JP7220363B2 (ja) * | 2019-03-28 | 2023-02-10 | パナソニックIpマネジメント株式会社 | 波長変換部材、光源装置、及び照明装置 |
EP3935135B1 (en) * | 2019-04-12 | 2022-07-06 | Lumileds LLC | Novel nir broadband emitting phosphors for infrared spectroscopy |
US11764206B2 (en) * | 2021-11-17 | 2023-09-19 | Taiwan Semiconductor Manufacturing Company, Ltd. | Electrostatic discharge protection for integrated circuit during back end-of-line processing |
JP2023109217A (ja) * | 2022-01-27 | 2023-08-08 | パナソニックIpマネジメント株式会社 | 発光装置及びセンシングシステム |
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US20200028035A1 (en) | 2020-01-23 |
KR102327421B1 (ko) | 2021-11-17 |
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JP2020021936A (ja) | 2020-02-06 |
TW202018974A (zh) | 2020-05-16 |
CN110739295B (zh) | 2022-02-08 |
TWI705584B (zh) | 2020-09-21 |
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US10873011B2 (en) | 2020-12-22 |
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